CN106744650B - MEMS discharges length detection structure and preparation method thereof - Google Patents
MEMS discharges length detection structure and preparation method thereof Download PDFInfo
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- CN106744650B CN106744650B CN201611218438.2A CN201611218438A CN106744650B CN 106744650 B CN106744650 B CN 106744650B CN 201611218438 A CN201611218438 A CN 201611218438A CN 106744650 B CN106744650 B CN 106744650B
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00087—Holes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C99/00—Subject matter not provided for in other groups of this subclass
- B81C99/0035—Testing
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Abstract
The present invention relates to a kind of MEMS to discharge length detection structure and preparation method thereof, the MEMS discharges length detection structure by the way that upper structure sheaf is arranged on sacrificial layer, and it is equipped with through the release aperture of upper structure sheaf and at least through the release length observation hole for being formed by part by opaque material in structure sheaf on this, to discharge length by the release peep hole, that is, observable, it is observed for non-demolition formula, in addition, without backlight or infrared microscope is used.The preparation method of MEMS release length detection structures through the invention is formed by MEMS releases length detection structure and can be formed in upper structure sheaf through the release aperture of upper structure sheaf and at least through the release length observation hole for being formed by part by opaque material, to discharge length by the release length observation hole, that is, observable, it is observed for non-demolition formula, in addition, without backlight or infrared microscope is used.
Description
Technical field
The present invention relates to a kind of MEMS to discharge length detection structure and preparation method thereof, belongs to micro code-lock field.
Background technology
Since the nineties in last century, MEMS technology obtains tremendous development, accelerometer, silicon microphone, pressure sensor, top
A variety of MEMS device such as spiral shell instrument, digital micro-mirror are commercialized success one after another, and gradually substitute similar traditional devices.In the processing sides MEMS
In method, release process is one of the most widely used processing technology.At present when sacrificial layer discharges, relatively common release is grown
It spends there are two types of monitoring methods：One is damage types, after the completion of release, the structure discharged are opened with tape-stripping, directly
It connects and measures anchoring area length with microscope length measurement function, but, on the one hand it is destructive detection the problem of this way, it is another
Aspect is to be difficult to expose anchoring area sacrificial layer, often to destroy many structures, the structure to scrape through could occurs；Another kind is
Non-demolition formula, design release monitoring pattern, after the completion of release, using backlight microscope, infrared microscope, cooperation microscope is long
Degree measures functional measurement and discharges length, but, this way is more to measuring instrument requirement, is not easy to promote the use of.In order to solve
The above problem, Chinese patent application the 201310739278.6th disclose following scheme：Semiconductor wafer is provided, on it
Form sacrificial layer；Transparent material is formed on the sacrificial layer；Release aperture is formed on the transparent material；Pass through the release
Hole removes the sacrificial layer；The residual of sacrificial layer can be monitored whether by transparent material.But this method is only limitted to sacrifice
One layer of the upper surface of layer is transparent material layer, and observation release length is then cannot achieve if it is opaque material layer.It can actually answer
In, for capacitive MEMS device, structural material often requires mechanical performance, electric conductivity, common structure
Layer material is silicon and polysilicon, realizes conduction by adulterating, but silicon and polysilicon are opaque material, and silicon oxide or silicon nitride
Equal transparent materials are not suitable as structure sheaf because can not be conductive, generally require and conductive material (typical silicon, polysilicon, metal
Deng all opaque) formed composite membrane used as structure sheaf.
In addition, found in actual practice process, it is all identical in device layers structure design, if with sacrificial
The upper structure sheaf that domestic animal layer is in direct contact selects different materials, then within identical release time, the release of each sacrificial layer is grown
Degree may be different, in other words, for same sacrificial layer material, if the upper structural material being in direct contact with it is not
Together, the rate of release of sacrificial layer may be different.For example, the first device and the second device are provided, if the first device, the second device
Structure design is identical, and lower structure layer material is identical, and sacrificial layer material is identical, but be in direct contact with its sacrificial layer in the first device
It is materials A that upper structure sheaf, which uses, and it is material B to be used with the upper structure sheaf that its sacrificial layer is in direct contact in the second device, then passes through
The sacrificial layer release length of identical release time, the first device and the second device may be different；For another example, it is assumed that the first device
It is product, the second device is detection structure, and the upper structure sheaf being in direct contact with its sacrificial layer in product is non-transparent material, detection
The upper structure sheaf being in direct contact with its sacrificial layer in structure is transparent material, then passing through identical release time, detection structure
May be different with the sacrificial layer of product release length, that is to say, that the release length of detection structure reading not necessarily with product
Release length is identical, and such detection structure, which differs, surely is used for monitoring the release length of product.In conclusion when using sacrifice
On layer use different material layers when, the release time of sacrificial layer can not be estimated, so, when on sacrificial layer use non-transparent material
When, Chinese patent application the 201310739278.6th can not understand it and discharge length.
Invention content
It is that non-demolition formula is observed the purpose of the present invention is to provide one kind, and without using backlight or infrared microscope
MEMS discharges length detection structure.
In order to achieve the above objectives, the present invention provides the following technical solutions：A kind of MEMS releases length detection structure, including under
Structure sheaf, the sacrificial layer being formed on the lower structure layer and the upper structure sheaf being formed on the sacrificial layer, the upper structure
Release aperture and release length observation hole are equipped in layer, the release aperture runs through upper structure sheaf；The upper structure sheaf is all by impermeable
Bright material is formed or the upper textured layer portion is formed by opaque material；The release length observation hole is at least passed through
It wears and part is formed by by opaque material.
Further：The release length observation hole is along one extended in the corrosion position in the plane of sacrificial layer；
Alternatively, the release length observation hole is at least two, at least two release length observation holes are along in the plane of sacrificial layer
On corrosion position distribution.
Further：The upper structure sheaf is single layer or at least two layers；When the upper structure sheaf be single layer when, it is described on
Structure sheaf is to be formed by opaque layer by opaque material；When the upper structure sheaf is at least two layers, the upper structure sheaf
Including at least two layers of sub-structure, a wherein at least straton structure sheaf is to be formed by opaque layer by opaque material.
Further：When the upper structure sheaf includes at least two layers of sub-structure, at least two layers minor structure
Opaque layer is located at lower layer described in layer, and the opaque layer is contacted with the sacrificial layer.
Further：Region etch other than the release aperture and release length observation hole is formed with length scales.
Further：The MEMS releases length detection structure further includes being formed in the release blocking of the upper structure sheaf
Layer, release barrier layer is hyaline layer or semitransparent layer, and the release barrier layer does not cover the release aperture.
Further：Release barrier layer is covered in the release length observation hole.
The present invention also provides the preparation methods that a kind of MEMS discharges length detection structure, to form above-mentioned MEMS releases
Length detection structure, the preparation method include the following steps：
S1：The deposited sacrificial layer on lower structure layer；
S2：Upper structure sheaf is deposited on the sacrificial layer, wherein upper structure sheaf is all formed by opaque material, or
Upper textured layer portion described in person is formed by opaque material；
S3：Etching forms release aperture and release length observation hole on the upper structure sheaf, and the release aperture runs through upper knot
Structure layer, the release length observation hole is at least run through is formed by part by opaque material.
Further：The preparation method further includes following steps：
S4：Deposition release barrier layer, etches away the release barrier layer in release aperture on the upper structure sheaf.
Further：In S4, when etching discharges barrier layer, in addition to etching the release barrier layer in release aperture,
Region etch formation length scale other than release aperture and release length observation hole.
The beneficial effects of the present invention are：The present invention MEMS release length detection structure by sacrificial layer be arranged on
Structure sheaf, and be equipped with to run through the release aperture of upper structure sheaf and at least run through in structure sheaf on this and portion is formed by by opaque material
The release length observation hole divided is observed to discharge length by the release peep hole, that is, observable for non-demolition formula, in addition,
Without using backlight or infrared microscope.The preparation method of MEMS release length detection structures through the invention is formed
MEMS releases length detection structure can be formed in upper structure sheaf through the release aperture of upper structure sheaf and at least through by not
Transparent material is formed by the release length observation hole of part, to pass through the release length observation hole, that is, observable release length
Degree is observed for non-demolition formula, in addition, without backlight or infrared microscope is used.
Above description is only the general introduction of technical solution of the present invention, in order to better understand the technical means of the present invention,
And can be implemented in accordance with the contents of the specification, below with presently preferred embodiments of the present invention and after coordinating attached drawing to be described in detail such as.
Description of the drawings
Fig. 1 is the sectional view that MEMS discharges length detection structure shown in one embodiment of the invention；
Fig. 2 is the vertical view of upper structure sheaf in Fig. 1；
Fig. 3 is the vertical view that barrier layer is discharged in Fig. 1.
Specific implementation mode
With reference to the accompanying drawings and examples, the specific implementation mode of the present invention is described in further detail.Implement below
Example is not limited to the scope of the present invention for illustrating the present invention.
Fig. 1 to Fig. 3 is referred to, MEMS release length detection structures include lower structure shown in a preferred embodiment of the present invention
It layer 1, the sacrificial layer 2 that is formed on the lower structure layer 1, the upper structure sheaf 3 being formed on the sacrificial layer 2 and is formed in described
The release barrier layer 4 of upper structure sheaf 3.Release aperture 31 and release length observation hole 32, the release are equipped in the upper structure sheaf 3
Upper structure sheaf 3 is run through in hole 31.The upper structure sheaf 3 all formed by opaque material or 3 part of upper structure sheaf by
Opaque material is formed；The release length observation hole 32 is at least run through is formed by part by opaque material.It is described to release
It is hyaline layer or semitransparent layer to put barrier layer 4, and the release barrier layer 4 does not cover the release aperture 31.By on sacrificial layer 2
Structure sheaf 3 in setting, and be equipped with through the release aperture 31 of upper structure sheaf 3 and at least through by opaque material in structure sheaf 3 on this
Material is formed by the release length observation hole 32 of part, is non-broken to discharge length by the release peep hole, that is, observable
Bad formula is observed, in addition, when observation discharges length, without using backlight or infrared microscope, is merely with simple microscope
Observation can be achieved.The lower structure layer 1 is substrate, in the present embodiment, the material of the lower structure layer 1 be silicon or polysilicon or
Person's silicon nitride.The material of the sacrificial layer 2 is silica.Really, the lower structure layer 1 and sacrificial layer 2 or other abilities
Domain material commonly used in the prior art.
The upper structure sheaf 3 is single layer or at least two layers；When the upper structure sheaf 3 is single layer, the upper structure sheaf 3
To be formed by opaque layer by opaque material；When the upper structure sheaf 3 is at least two layers, the upper structure sheaf 3 includes
At least two layers of sub-structure (not shown), wherein at least a straton structure sheaf are to be formed by opaque layer by opaque material.
The opaque layer can be conductive material layer, and in the present embodiment, which is silicon layer or polysilicon layer.When the upper knot
When structure layer 3 includes at least two layers of sub-structure, the opaque layer described at least two layers sub-structure is located at lower layer, described
Opaque layer is contacted with the sacrificial layer 2.Fig. 2 is referred to, the release length observation hole 32 is multiple, multiple release length
Along the corrosion position of the plane of sacrificial layer 2, (direction of arrow a is to be somebody's turn to do " in the corruption of the plane of sacrificial layer 2 to degree peep hole 32 in Fig. 2
The typical directions in erosion direction " can should be the arbitrary side in the plane of sacrificial layer 2 " in the corrosion position of the plane of sacrificial layer 2 "
To) distribution.In embodiment, the shape in the release length observation hole 32 is rectangle, the quantity in the release length observation hole 32
It is 8, and the distance of 8 32 opposite release apertures 31 of release length observation hole is different, 8 32 opposite releases of release length observation hole
The distance in hole 31 is equidistantly to be incremented by.Certainly, in other embodiments, the release length observation hole 32 can be along in sacrificial
Domestic animal layer 2 plane on corrosion position extend one；Alternatively, the release length observation hole 32 can be two or other numbers
Amount.Wherein, will to be arranged multiple be optimal design in release length observation hole 32, when will discharge length observation hole 32 be designed as it is multiple
Afterwards, similarly in release length observation region, release length observation hole 32 is smaller with the contact surface of sacrificial layer 2, is set by such
Meter can avoid influence of the different interfaces to release length, and principle is as follows：If release length observation hole 32 is too big, when releasing
Tapping enters release aperture 31, when release liquid erodes to release length observation 32 region of hole along 2 in-plane of sacrificial layer, it will go out
Existing, the release length in release length observation hole 32 is different from the region other than release length observation hole 32, so as to cause reading
As a result inaccurate, conversely, peep hole is smaller, peep hole, which is staggered, to be put more, and error is smaller, and range is bigger.In addition, above-mentioned simultaneously
Principle can be seen that the release length observation hole 32 should be designed small as possible.The release length observation hole 32 to release aperture 31 away from
From can be designed to a variety of different sizes simultaneously.When designing multiple release length observation holes 32, release boundary appears in difference
Release length observation hole 32 in represent different release length.In order to avoid release liquid enters out of release length observation hole 32
Sacrificial layer 2 is covered with release barrier layer 4 in the release length observation hole 32.
The release barrier layer 4 is silicon nitride layer either photoresist layer or by silicon nitride and photoresist composite layer,
In in composite layer, photoresist is located at the upper layer of silicon nitride.Since the release aperture of upper structure sheaf 3 is not blocked on the release barrier layer 4
31 (referring to Fig. 2), so, it is corresponding, corresponding aperture 41 will be formed on the release barrier layer 4 (referring to Fig. 3).In the present embodiment,
The release aperture 31 is a slot, and the corresponding aperture 41 is similarly a slot.Certainly, in other embodiments,
The release aperture 31 can be other shapes, the combination bore of the multiple square holes or cylindrical hole that such as form a line or other
Common shape in state of the art.
Length is discharged for the ease of observation, which discharges length detection structure and can be grown in the release aperture 31 and release
Spend the region etch formation length scale (not shown) other than peep hole 32.The length scales are formed on release barrier layer 4,
It can be formed by etching.Since the volume that MEMS discharges length detection structure is small, only by being visually not easy to observe, and by
Structure designed by the present invention, so, it is only logical when the MEMS of the observation present invention discharges the release length of length detection structure
It crosses common microscope and observation release length can be realized.Certainly, in other embodiments, which can not also be set
Ruler, and can equally realize observation release length using microscopical length measurement function.
Incorporated by reference to Fig. 1 to Fig. 3, MEMS of the invention discharges the preparation method of length detection structure to form above-mentioned MEMS
Length detection structure is discharged, which includes the following steps：
S1：The deposited sacrificial layer 2 on lower structure layer 1, wherein the lower structure layer 1 is substrate, in the present embodiment, under this
The material of structure sheaf 1 is silicon either polysilicon or silicon nitride.The material of the sacrificial layer 2 is silica.Really, the lower structure
Common material in layer 1 and sacrificial layer 2 or other state of the art.
S2：Upper structure sheaf 3 is deposited on the sacrificial layer 2, wherein upper structure sheaf 3 is all formed by opaque material,
Or 3 part of upper structure sheaf is formed by opaque material；
S3：Etching forms release aperture 31 and release length observation hole 32 on the upper structure sheaf 3, and the release aperture 31 is passed through
Structure sheaf 3 is put on, the release length observation hole 32 is at least run through is formed by part by opaque material.
In the S2, the upper structure sheaf 3 can be single layer or at least two layers；When the upper structure sheaf 3 is single layer
When, the upper structure sheaf 3 is to be formed by opaque layer by opaque material；When the upper structure sheaf 3 is at least two layers, institute
It includes at least two layers of sub-structure to state structure sheaf 3, and a wherein at least straton structure sheaf is to be formed by not by opaque material
Hyaline layer.The opaque layer can be conductive material layer, and in the present embodiment, which is silicon layer or polysilicon layer.When
When the upper structure sheaf 3 includes at least two layers of sub-structure, opaque layer is located at described at least two layers sub-structure
Lower layer, the opaque layer are contacted with the sacrificial layer 2.Incorporated by reference to Fig. 2, the release length observation hole formed in the S3
32 be multiple, and the horizontal release direction distribution of sacrificial layer 2 is prolonged in multiple release length observation holes 32.In embodiment, described
The shape for discharging length observation hole 32 is rectangle, and the quantity in the release length observation hole 32 is 8, and 8 release length observations
Hole 32 is different with respect to the distance of release aperture 31, and the distance of 8 32 opposite release apertures 31 of release length observation hole is equidistantly to be incremented by.
Certainly, in other embodiments, the release length observation hole 32 can be to prolong the horizontal release direction of the sacrificial layer 2 to prolong
One stretched；Alternatively, the release length observation hole 32 can be two or other quantity.But in order to avoid different interfaces
To discharging the influence of length, will to be arranged multiple be optimal design in release length observation hole 32, the release length observation hole 32 is to releasing
The distance of discharge hole 31 can be designed to that a variety of different sizes, release length observation hole 32 should design small as possible, release side simultaneously
Boundary appears in different release peep holes and represents different release length.
Protect upper structure sheaf 3 simultaneously for the ease of releasing sacrificial layer 2, the preparation method further includes following steps：
S4：Deposition release barrier layer 4, etches away the release barrier layer 4 in release aperture 31 on the upper structure sheaf 3.
After the completion of this step, release barrier layer 4 can be covered in the release length observation hole 32.The release barrier layer 4 is nitrogen
SiClx layer either photoresist layer or by silicon nitride and photoresist composite layer, wherein in composite layer, photoresist is located at nitridation
The upper layer of silicon.
Length is discharged for the ease of observation, in S4, when etching discharges barrier layer 4, in addition in etching release aperture 31
Barrier layer 4 is discharged, the region etch formation length scale other than release aperture 31 and release length observation hole 32.
In summary：Above-mentioned MEMS discharges length detection structure by the way that upper structure sheaf 3 is arranged on sacrificial layer 2, and on this
It is equipped in structure sheaf 3 through the release aperture 31 of upper structure sheaf 3 and at least through the release for being formed by part by opaque material
Length observation hole 32 is observed to discharge length by the release peep hole, that is, observable for non-demolition formula, in addition, without
Use backlight or infrared microscope.The preparation method that length detection structure is discharged by above-mentioned MEMS is formed by MEMS releases
Length detection structure can be formed in upper structure sheaf 3 through the release aperture 31 of upper structure sheaf 3 and at least through by opaque material
Material is formed by the release length observation hole 32 of part, to be that observable discharges length by the release length observation hole 32,
It is observed for non-demolition formula, in addition, without backlight or infrared microscope is used.
Each technical characteristic of embodiment described above can be combined arbitrarily, to keep description succinct, not to above-mentioned reality
It applies all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, it is all considered to be the range of this specification record.
Several embodiments of the invention above described embodiment only expresses, the description thereof is more specific and detailed, but simultaneously
It cannot therefore be construed as limiting the scope of the patent.It should be pointed out that coming for those of ordinary skill in the art
It says, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to the protection of the present invention
Range.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
1. a kind of MEMS discharges length detection structure, it is characterised in that：Including lower structure layer, it is formed on the lower structure layer
Sacrificial layer and the upper structure sheaf being formed on the sacrificial layer are equipped with release aperture and release length observation in the upper structure sheaf
Hole, the release aperture run through upper structure sheaf；The upper structure sheaf is all formed by opaque material or the upper structure sheaf
Part is formed by opaque material；The release length observation hole is at least run through is formed by part by opaque material.
2. MEMS as described in claim 1 discharges length detection structure, which is characterized in that the release length observation hole is edge
One extended in the corrosion position in the plane of sacrificial layer；Alternatively, the release length observation hole is at least two, at least two
A release length observation hole is along in the corrosion position distribution in the plane of sacrificial layer.
3. MEMS as described in claim 1 discharges length detection structure, which is characterized in that the upper structure sheaf be single layer or
At least two layers；When the upper structure sheaf is single layer, the upper structure sheaf is to be formed by opaque layer by opaque material；When
When the upper structure sheaf is at least two layers, the upper structure sheaf includes at least two layers of sub-structure, wherein at least a straton structure
Layer is to be formed by opaque layer by opaque material.
4. MEMS as claimed in claim 3 discharges length detection structure, which is characterized in that when the upper structure sheaf includes at least
When two layers of sub-structure, the opaque layer described at least two layers sub-structure is located at lower layer, the opaque layer and institute
State sacrificial layer contact.
5. MEMS as described in claim 1 discharges length detection structure, which is characterized in that the release aperture and release length are seen
It examines the region etch other than hole and is formed with length scales.
6. the MEMS as described in any one of claim 1 to 5 discharges length detection structure, which is characterized in that described
MEMS discharge length detection structure further include being formed in the release barrier layer of the upper structure sheaf, release barrier layer be hyaline layer or
Semitransparent layer, the release barrier layer do not cover the release aperture.
7. MEMS as claimed in claim 6 discharges length detection structure, which is characterized in that covered in the release length observation hole
It is stamped release barrier layer.
8. a kind of preparation method of MEMS releases length detection structure, which is characterized in that be formed such as claim 1 to 7
Any one of described in MEMS discharge length detection structure, the preparation method includes the following steps：
S1：The deposited sacrificial layer on lower structure layer；
S2：Upper structure sheaf is deposited on the sacrificial layer, wherein upper structure sheaf is all formed by opaque material, Huo Zhesuo
Textured layer portion is stated to be formed by opaque material；
S3：Etching forms release aperture and release length observation hole on the upper structure sheaf, and the release aperture runs through upper structure sheaf,
The release length observation hole is at least run through is formed by part by opaque material.
9. the preparation method of MEMS releases length detection structure as claimed in claim 8, which is characterized in that the preparation method
Further include following steps：
S4：Deposition release barrier layer, etches away the release barrier layer in release aperture on the upper structure sheaf.
10. the preparation method of MEMS releases length detection structure as claimed in claim 9, which is characterized in that in S4, carving
When erosion release barrier layer, in addition to the release barrier layer in etching release aperture, the area other than release aperture and release length observation hole
Domain etches formation length scale.
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| CN117945336A (en) * | 2024-03-27 | 2024-04-30 | 芯联越州集成电路制造（绍兴）有限公司 | Semiconductor device and method for manufacturing the same |
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| JP2006211296A (en) * | 2005-01-28 | 2006-08-10 | Sony Corp | Method of manufacturing micro machine, and micro machine |
| JP4581011B2 (en) * | 2008-01-25 | 2010-11-17 | 株式会社東芝 | Electrical parts and manufacturing method |
| US20100065930A1 (en) * | 2008-09-18 | 2010-03-18 | Rohm Co., Ltd. | Method of etching sacrificial layer, method of manufacturing MEMS device, MEMS device and MEMS sensor |
| US8652971B2 (en) * | 2011-03-04 | 2014-02-18 | Texas Instruments Incorporated | Cavity process etch undercut monitor |
| JP2014018871A (en) * | 2012-07-12 | 2014-02-03 | Seiko Epson Corp | Process monitor element, and method for manufacturing mems element |
| CN104743497B (en) * | 2013-12-27 | 2016-06-22 | 中芯国际集成电路制造(上海)有限公司 | The method that monitoring MEMS discharges process performance |
| CN105621342A (en) * | 2015-12-29 | 2016-06-01 | 苏州工业园区纳米产业技术研究院有限公司 | MEMS release auxiliary structure and preparation method thereof |
| CN206308009U (en) * | 2016-12-26 | 2017-07-07 | 苏州工业园区纳米产业技术研究院有限公司 | MEMS discharges length detection structure |
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