CN106744650A - MEMS release length detection structures and preparation method thereof - Google Patents
MEMS release length detection structures and preparation method thereof Download PDFInfo
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- CN106744650A CN106744650A CN201611218438.2A CN201611218438A CN106744650A CN 106744650 A CN106744650 A CN 106744650A CN 201611218438 A CN201611218438 A CN 201611218438A CN 106744650 A CN106744650 A CN 106744650A
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81B—MICROSTRUCTURAL DEVICES OR SYSTEMS, e.g. MICROMECHANICAL DEVICES
- B81B7/00—Microstructural systems; Auxiliary parts of microstructural devices or systems
- B81B7/02—Microstructural systems; Auxiliary parts of microstructural devices or systems containing distinct electrical or optical devices of particular relevance for their function, e.g. microelectro-mechanical systems [MEMS]
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C1/00—Manufacture or treatment of devices or systems in or on a substrate
- B81C1/00015—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems
- B81C1/00023—Manufacture or treatment of devices or systems in or on a substrate for manufacturing microsystems without movable or flexible elements
- B81C1/00087—Holes
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- B—PERFORMING OPERATIONS; TRANSPORTING
- B81—MICROSTRUCTURAL TECHNOLOGY
- B81C—PROCESSES OR APPARATUS SPECIALLY ADAPTED FOR THE MANUFACTURE OR TREATMENT OF MICROSTRUCTURAL DEVICES OR SYSTEMS
- B81C99/00—Subject matter not provided for in other groups of this subclass
- B81C99/0035—Testing
Abstract
The present invention relates to a kind of MEMS release length detection structures and preparation method thereof, the MEMS discharges length detection structure by setting structure sheaf on sacrifice layer, and be provided with through the release aperture of upper structure sheaf and at least through the release length observation hole of the part formed by opaque material in structure sheaf on this, so as to be that observable discharges length by the release peep hole, for non-demolition formula is observed, in addition, without use backlight or infrared microscope.The MEMS that the preparation method for discharging length detection structure by MEMS of the invention is formed discharges length detection structure can be formed through the release aperture of upper structure sheaf and at least through the release length observation hole of the part formed by opaque material in upper structure sheaf, so as to be that observable discharges length by the release length observation hole, for non-demolition formula is observed, in addition, without use backlight or infrared microscope.
Description
Technical field
The present invention relates to a kind of MEMS release length detection structures and preparation method thereof, belong to micro code-lock field.
Background technology
Since the nineties in last century, MEMS technology obtains tremendous development, accelerometer, silicon microphone, pressure sensor, top
Various MEMSs such as spiral shell instrument, digital micro-mirror are commercialized successfully one after another, and progressively substitute similar traditional devices.In MEMS processing sides
In method, release process is one of the most widely used processing technology.At present when sacrifice layer discharges, relatively common release is long
Degree monitoring method has two kinds：A kind of is damage type, after the completion of release, the structure for having discharged is opened with tape-stripping, directly
Connect and measure anchor section length with microscope length measurement function, but, on the one hand the problem of this way is destructive detection, another
Aspect is to be difficult to expose anchor area sacrifice layer, often to destroy many structures, the structure for scraping through could occurs；Another kind is
Non-demolition formula, design release monitoring pattern after the completion of release, using backlight microscope, infrared microscope, coordinates microscope long
Degree measurement functional measurement release length, but, this way is more to measuring instrument requirement, is not easy to promote the use of.In order to solve
Above mentioned problem, Chinese patent application the 201310739278.6th discloses following scheme：Semiconductor wafer is provided, thereon
Form sacrifice layer；Transparent material is formed on the sacrifice layer；Release aperture is formed on the transparent material；By the release
Hole removes the sacrifice layer；The residual of sacrifice layer can be monitored whether by transparent material.But, the method is only limitted to sacrifice
One layer is transparent material layer above layer, and observation release length cannot be then realized if opaque material layer.Actually can should
In, for capacitive MEMS device, structural material is often required to mechanical performance, electric conductivity, conventional structure
Layer material is silicon and polysilicon, and conduction is realized by adulterating, but silicon and polysilicon are opaque material, and silica or silicon nitride
Deng transparent material because cannot be conductive, structure sheaf be not suitable as, generally required and conductive material (typical silicon, polysilicon, metal
Deng all opaque) formed composite membrane used as structure sheaf.
In addition, found in actual practice process, in the case of device layers structure design is the same from, if with it is sacrificial
The upper structure sheaf of domestic animal layer directly contact selects different materials, then within identical release time, the release of each sacrifice layer is long
Degree may be different, in other words, for same sacrificial layer material, if the upper structural material being in direct contact with it is not
Together, the rate of release of sacrifice layer may be different.For example, there is provided the first device and the second device, if the first device, the second device
Structure design is identical, and lower structural material is identical, and sacrificial layer material is identical, but in the first device with its sacrifice layer directly contact
Using being materials A, it is material B to be used with the upper structure sheaf of its sacrifice layer directly contact in the second device to upper structure sheaf, then pass through
The sacrifice layer release length of identical release time, the first device and the second device may be different；And for example, it is assumed that the first device
It is product, the second device is detection structure, with the upper structure sheaf of its sacrifice layer directly contact is non-transparent material, detection in product
With the upper structure sheaf of its sacrifice layer directly contact it is transparent material in structure, then by identical release time, detect structure
May be different with the sacrifice layer of product release length, that is to say, that the release length of detection structure reading not necessarily with product
Release length is identical, and such detection structure differs surely for monitoring the release length of product.In sum, when using sacrifice
On layer use different material layers when, the release time of sacrifice layer cannot be estimated, so, when on sacrifice layer use non-transparent material
When, Chinese patent application the 201310739278.6th cannot understand its release length.
The content of the invention
It is the observation of non-demolition formula it is an object of the invention to provide one kind, and without using backlight or infrared microscope
MEMS discharges length detection structure.
To reach above-mentioned purpose, the present invention provides following technical scheme：A kind of MEMS releases length detection structure, including under
Structure sheaf, the sacrifice layer being formed on the lower structure sheaf and the upper structure sheaf being formed on the sacrifice layer, the upper structure
Release aperture and release length observation hole are provided with layer, the release aperture runs through upper structure sheaf；The upper structure sheaf is all by impermeable
Bright material is formed, or the upper textured layer portion is formed by opaque material；The release length observation hole is at least passed through
Wear the part formed by opaque material.
Further：The release length observation hole is along extended in the corrosion position in the plane of sacrifice layer；
Or, the release length observation hole is at least two, and length observation hole is discharged described at least two along in the plane of sacrifice layer
On corrosion position distribution.
Further：The upper structure sheaf is individual layer or at least two-layer；When the upper structure sheaf be individual layer when, it is described on
Structure sheaf is the opaque layer formed by opaque material；When the upper structure sheaf is at least two-layer, the upper structure sheaf
Including at least two-layer sub-structure, the straton structure sheaf of wherein at least one is the opaque layer formed by opaque material.
Further：When the upper structure sheaf includes at least two-layer sub-structure, in minor structure described at least two-layer
Opaque layer is located at lower floor described in layer, and the opaque layer is contacted with the sacrifice layer.
Further：Region etch beyond the release aperture and release length observation hole is formed with length scales.
Further：The MEMS release length detections structure also includes that the release for being formed in the upper structure sheaf stops
Layer, release barrier layer is hyaline layer or semitransparent layer, and the release barrier layer does not cover the release aperture.
Further：Release barrier layer is coated with the release length observation hole.
Present invention also offers the preparation method that a kind of MEMS discharges length detection structure, it is used to form above-mentioned MEMS releases
Length detection structure, the preparation method comprises the following steps：
S1：The deposition of sacrificial layer on lower structure sheaf；
S2：The structure sheaf in deposition on the sacrifice layer, wherein, upper structure sheaf is all formed by opaque material, or
Upper textured layer portion is formed by opaque material described in person；
S3：Etching forms release aperture and release length observation hole on structure sheaf on described, and the release aperture runs through upper knot
Structure layer, the release length observation hole is at least through the part formed by opaque material.
Further：The preparation method also comprises the following steps：
S4：Release barrier layer is deposited on described on structure sheaf, the release barrier layer in release aperture is etched away.
Further：In S4, at etching release barrier layer, except etching the release barrier layer in release aperture,
Region etch beyond release aperture and release length observation hole forms length scales.
The beneficial effects of the present invention are：MEMS release length detection structures of the invention are set by sacrifice layer
Structure sheaf, and be provided with through the release aperture of upper structure sheaf and at least through the portion formed by opaque material in structure sheaf on this
The release length observation hole divided, is the observation of non-demolition formula so as to be that observable discharges length by the release peep hole, in addition,
Without use backlight or infrared microscope.The preparation method for discharging length detection structure by MEMS of the invention is formed
MEMS releases length detection structure can be formed in upper structure sheaf through the release aperture of upper structure sheaf and at least through by not
The release length observation hole of the part that transparent material is formed, so as to be that observable discharges length by the release length observation hole
Degree, is the observation of non-demolition formula, in addition, without use backlight or infrared microscope.
Described above is only the general introduction of technical solution of the present invention, in order to better understand technological means of the invention,
And can be practiced according to the content of specification, below with presently preferred embodiments of the present invention and coordinate accompanying drawing describe in detail as after.
Brief description of the drawings
Fig. 1 is the sectional view of the MEMS release length detection structures shown in one embodiment of the invention；
Fig. 2 is the top view of upper structure sheaf in Fig. 1；
Fig. 3 is the top view on release barrier layer in Fig. 1.
Specific embodiment
With reference to the accompanying drawings and examples, specific embodiment of the invention is described in further detail.Hereinafter implement
Example is not limited to the scope of the present invention for illustrating the present invention.
Fig. 1 to Fig. 3 is referred to, the MEMS release length detection structures shown in a preferred embodiment of the present invention include lower structure
The layer 1, sacrifice layer 2 that is formed on the lower structure sheaf 1, the upper structure sheaf 3 being formed on the sacrifice layer 2 and it is formed in described
The release barrier layer 4 of upper structure sheaf 3.Release aperture 31 and release length observation hole 32, the release are provided with the upper structure sheaf 3
Upper structure sheaf 3 is run through in hole 31.The upper structure sheaf 3 is all formed by opaque material, or the part of upper structure sheaf 3 by
Opaque material is formed；The release length observation hole 32 is at least through the part formed by opaque material.It is described to release
Barrier layer 4 is put for hyaline layer or semitransparent layer, the release barrier layer 4 does not cover the release aperture 31.By on sacrifice layer 2
Structure sheaf 3 in setting, and be provided with through the release aperture 31 of upper structure sheaf 3 and at least through by opaque material in structure sheaf 3 on this
The release length observation hole 32 of the formed part of material, is non-broken so as to be that observable discharges length by the release peep hole
Bad formula is observed, in addition, in observation release length, without using backlight or infrared microscope, being merely with simple microscope
It is capable of achieving observation.The lower structure sheaf 1 is substrate, in the present embodiment, the material of the lower structure sheaf 1 for silicon or polysilicon or
Person's silicon nitride.The material of the sacrifice layer 2 is silica.Really, the lower structure sheaf 1 and sacrifice layer 2 can also be other abilities
Domain material commonly used in the prior art.
The upper structure sheaf 3 is individual layer or at least two-layer；When the upper structure sheaf 3 is individual layer, the upper structure sheaf 3
It is the opaque layer formed by opaque material；When the upper structure sheaf 3 is at least two-layer, the upper structure sheaf 3 includes
At least two-layer sub-structure (not shown), the straton structure sheaf of wherein at least one is the opaque layer formed by opaque material.
The opaque layer can be conductive material layer, and in the present embodiment, the opaque layer is silicon layer or polysilicon layer.When the upper knot
When structure layer 3 is comprising at least two-layer sub-structure, lower floor is located in opaque layer described in sub-structure described at least two-layer, it is described
Opaque layer is contacted with the sacrifice layer 2.Fig. 2 is referred to, the release length observation hole 32 is multiple, multiple release length
(direction of arrow a is for should " in the corruption of the plane of sacrifice layer 2 in Fig. 2 along the corrosion position of the plane of sacrifice layer 2 for degree peep hole 32
The typical directions in erosion direction ", can should be any side in the plane of sacrifice layer 2 " in the corrosion position of the plane of sacrifice layer 2 "
To) distribution.In embodiment, the release length observation hole 32 is shaped as rectangle, the quantity in the release length observation hole 32
It is 8, and the distance of 8 relative release apertures 31 in release length observation hole 32 is different, 8 relative releases in release length observation hole 32
The distance in hole 31 is equidistantly incremental.Certainly, in other embodiments, the release length observation hole 32 can be along in sacrificial
Domestic animal layer 2 plane on corrosion position extend one；Or, the release length observation hole 32 can be two or other numbers
Amount.Wherein, it is optimal design release length observation hole 32 to be set multiple, and multiple is designed as when will discharge length observation hole 32
Afterwards, in same release length observation region, release length observation hole 32 is smaller with the contact surface of sacrifice layer 2, is set by this kind of
Meter can avoid different interfaces as follows to discharging the influence of length, its principle：If release length observation hole 32 is too big, when releasing
Tapping enters release aperture 31, when release liquid erodes to release length observation 32 region of hole along the in-plane of sacrifice layer 2, it will go out
Existing, the release length in release length observation hole 32 is different from the region beyond release length observation hole 32, so as to cause to read
Result is inaccurate, conversely, peep hole is smaller, peep hole staggers and puts more, and error is smaller, and range is bigger.In addition, simultaneously above-mentioned
Principle can be seen that it is as far as possible small that the release length observation hole 32 should be designed.The release length observation hole 32 to release aperture 31 away from
From can simultaneously be designed to various different sizes.When the multiple release length observation holes 32 of design, release border appears in difference
Release length observation hole 32 in represent different release length.In order to avoid release liquid enters from release length observation hole 32
Sacrifice layer 2, release barrier layer 4 is coated with the release length observation hole 32.
The release barrier layer 4 is silicon nitride layer, or photoresist layer, or by silicon nitride and photoresist composite bed, its
In in composite bed, photoresist be located at silicon nitride upper strata.The release aperture of upper structure sheaf 3 is not blocked due to the release barrier layer 4
31 (referring to Fig. 2), so, it is corresponding, corresponding aperture 41 will be formed on the release barrier layer 4 (referring to Fig. 3).In the present embodiment,
The release aperture 31 is a slot, and the corresponding aperture 41 is similarly a slot.Certainly, in other embodiments,
The release aperture 31 can be other shapes, the multiple square openings or the combination bore of cylindrical hole for such as forming a line, or other
The shape commonly used in state of the art.
For the ease of observation release length, MEMS release length detections structure can be grown in the release aperture 31 and release
Region etch beyond degree peep hole 32 forms length scales (not shown).The length scales are formed on release barrier layer 4, its
Can be formed by etching.Because the volume of MEMS release length detection structures is small, only it is not easy to observe by naked eyes, and by
In the structure designed by the present invention, so, when the release length of MEMS releases length detection structure of the invention is observed, only lead to
Cross common microscope and be capable of achieving observation release length.Certainly, in other embodiments, it is also possible to be not provided with the scale long
Chi, and observation release length is equally realized by utilizing microscopical length measurement function.
Incorporated by reference to Fig. 1 to Fig. 3, the preparation method of MEMS releases length detection structure of the invention is used to form above-mentioned MEMS
Release length detection structure, the preparation method comprises the following steps：
S1：The deposition of sacrificial layer 2 on lower structure sheaf 1, wherein, the lower structure sheaf 1 is substrate, in the present embodiment, under this
The material of structure sheaf 1 is silicon or polysilicon or silicon nitride.The material of the sacrifice layer 2 is silica.Really, the lower structure
Layer 1 and sacrifice layer 2 can also be the material commonly used in other state of the art.
S2：The structure sheaf 3 in deposition on the sacrifice layer 2, wherein, upper structure sheaf 3 is all formed by opaque material,
Or the part of upper structure sheaf 3 is formed by opaque material；
S3：Etching forms release aperture 31 and release length observation hole 32 on structure sheaf 3 on described, and the release aperture 31 is passed through
Structure sheaf 3 is put on, the release length observation hole 32 is at least through the part formed by opaque material.
In the S2, the upper structure sheaf 3 can be individual layer or at least two-layer；When the upper structure sheaf 3 is individual layer
When, the upper structure sheaf 3 is the opaque layer formed by opaque material；When the upper structure sheaf 3 is at least two-layer, institute
Stating structure sheaf 3 includes at least two-layer sub-structure, and the straton structure sheaf of wherein at least one is to be formed not by opaque material
Hyaline layer.The opaque layer can be conductive material layer, and in the present embodiment, the opaque layer is silicon layer or polysilicon layer.When
When the upper structure sheaf 3 is comprising at least two-layer sub-structure, opaque layer is located at described in sub-structure described at least two-layer
Lower floor, the opaque layer is contacted with the sacrifice layer 2.Incorporated by reference to Fig. 2, the release length observation hole formed in the S3
32 is multiple, and the horizontal release direction distribution of sacrifice layer 2 is prolonged in multiple release length observation holes 32.It is described in embodiment
Discharge length observation hole 32 is shaped as rectangle, and the quantity in the release length observation hole 32 is 8, and 8 release length observations
Hole 32 is different with respect to the distance of release aperture 31, and the distances of 8 relative release apertures 31 in release length observation hole 32 are equidistantly to be incremented by.
Certainly, in other embodiments, the release length observation hole 32 can be that the horizontal release direction for prolonging the sacrifice layer 2 is prolonged
One for stretching；Or, the release length observation hole 32 can be two or other quantity.But, in order to avoid different interfaces
Influence to discharging length, will to set multiple be optimal design in release length observation hole 32, the release length observation hole 32 is to releasing
The distance of discharge hole 31 can simultaneously be designed to various different sizes, and it is as far as possible small that release length observation hole 32 should be designed, and discharges side
Boundary appears in different release peep holes and represents different release length.
Protect upper structure sheaf 3 simultaneously for the ease of releasing sacrificial layer 2, the preparation method also comprises the following steps：
S4：Release barrier layer 4 is deposited on described on structure sheaf 3, the release barrier layer 4 in release aperture 31 is etched away.
After the completion of this step, release barrier layer 4 can be coated with the release length observation hole 32.The release barrier layer 4 is nitrogen
SiClx layer, or photoresist layer, or by silicon nitride and photoresist composite bed, wherein in composite bed, photoresist is located at nitridation
The upper strata of silicon.
For the ease of observation release length, in S4, at etching release barrier layer 4, except in etching release aperture 31
Release barrier layer 4, the region etch beyond release aperture 31 and release length observation hole 32 forms length scales.
In sum：Above-mentioned MEMS discharges length detection structure by setting structure sheaf 3 on sacrifice layer 2, and on this
It is provided with structure sheaf 3 through the release aperture 31 of upper structure sheaf 3 and at least through the release of the part formed by opaque material
Length observation hole 32, is the observation of non-demolition formula so as to be that observable discharges length by the release peep hole, in addition, without
Use backlight or infrared microscope.The MEMS that the preparation method for discharging length detection structure by above-mentioned MEMS is formed discharges
Length detection structure can be formed through the release aperture 31 of upper structure sheaf 3 and at least through by opaque material in upper structure sheaf 3
The release length observation hole 32 of the formed part of material, so that be that observable discharges length by the release length observation hole 32,
It is that non-demolition formula is observed, in addition, without use backlight or infrared microscope.
Each technical characteristic of embodiment described above can be combined arbitrarily, to make description succinct, not to above-mentioned reality
Apply all possible combination of each technical characteristic in example to be all described, as long as however, the combination of these technical characteristics is not deposited
In contradiction, the scope of this specification record is all considered to be.
Embodiment described above only expresses several embodiments of the invention, and its description is more specific and detailed, but simultaneously
Can not therefore be construed as limiting the scope of the patent.It should be pointed out that coming for one of ordinary skill in the art
Say, without departing from the inventive concept of the premise, various modifications and improvements can be made, these belong to protection of the invention
Scope.Therefore, the protection domain of patent of the present invention should be determined by the appended claims.
Claims (10)
1. a kind of MEMS discharges length detection structure, it is characterised in that：Including lower structure sheaf, it is formed on the lower structure sheaf
Sacrifice layer and the upper structure sheaf being formed on the sacrifice layer, are provided with release aperture and release length observation in the upper structure sheaf
Hole, the release aperture runs through upper structure sheaf；The upper structure sheaf is all formed by opaque material, or the upper structure sheaf
Part is formed by opaque material；The release length observation hole is at least through the part formed by opaque material.
2. MEMS as claimed in claim 1 discharges length detection structure, it is characterised in that the release length observation hole is edge
One extended in the corrosion position in the plane of sacrifice layer；Or, the release length observation hole is at least two, at least two
The individual release length observation hole is along in the corrosion position distribution in the plane of sacrifice layer.
3. MEMS as claimed in claim 1 release length detection structure, it is characterised in that the upper structure sheaf be individual layer or
At least two-layer；When the upper structure sheaf is individual layer, the upper structure sheaf is the opaque layer formed by opaque material；When
The upper structure sheaf be at least two-layer when, the upper structure sheaf includes at least two-layer sub-structure, the straton structure of wherein at least one
Layer is the opaque layer formed by opaque material.
4. MEMS as claimed in claim 3 discharges length detection structure, it is characterised in that when the upper structure sheaf is comprising at least
During two-layer sub-structure, lower floor, the opaque layer and institute are located in opaque layer described in sub-structure described at least two-layer
State sacrifice layer contact.
5. MEMS as claimed in claim 1 discharges length detection structure, it is characterised in that the release aperture and release length are seen
Examine the region etch beyond hole and be formed with length scales.
6. the MEMS as described in any one in claim 1 to 5 discharges length detection structure, it is characterised in that described
MEMS releases length detection structure also includes being formed in the release barrier layer of the upper structure sheaf, release barrier layer be hyaline layer or
Semitransparent layer, the release barrier layer does not cover the release aperture.
7. MEMS as claimed in claim 6 discharges length detection structure, it is characterised in that covered in the release length observation hole
It is stamped release barrier layer.
8. a kind of MEMS discharges the preparation method of length detection structure, it is characterised in that be used to be formed such as claim 1 to 7
MEMS release length detection structures described in middle any one, the preparation method comprises the following steps：
S1：The deposition of sacrificial layer on lower structure sheaf；
S2：The structure sheaf in deposition on the sacrifice layer, wherein, upper structure sheaf is all formed by opaque material, Huo Zhesuo
Textured layer portion is stated to be formed by opaque material；
S3：Etching forms release aperture and release length observation hole on structure sheaf on described, and the release aperture runs through upper structure sheaf,
The release length observation hole is at least through the part formed by opaque material.
9. MEMS as claimed in claim 8 discharges the preparation method of length detection structure, it is characterised in that the preparation method
Also comprise the following steps：
S4：Release barrier layer is deposited on described on structure sheaf, the release barrier layer in release aperture is etched away.
10. MEMS as claimed in claim 9 discharges the preparation method of length detection structure, it is characterised in that in S4, is carving
During erosion release barrier layer, except the release barrier layer in etching release aperture, the area beyond release aperture and release length observation hole
Domain etches to form length scales.
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| CN109802649A (en) * | 2018-12-29 | 2019-05-24 | 开元通信技术（厦门）有限公司 | A method of monitoring air-gap type bulk acoustic wave resonator cavity discharges process |
| CN109802649B (en) * | 2018-12-29 | 2023-04-11 | 开元通信技术（厦门）有限公司 | Method for monitoring cavity release process of air-gap type bulk acoustic wave resonator |
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