CN1067361C - Composition of temp.-stabilized type high dielectric multi-layer ceramic capacitor material and preparation process thereof - Google Patents
Composition of temp.-stabilized type high dielectric multi-layer ceramic capacitor material and preparation process thereof Download PDFInfo
- Publication number
- CN1067361C CN1067361C CN98124799A CN98124799A CN1067361C CN 1067361 C CN1067361 C CN 1067361C CN 98124799 A CN98124799 A CN 98124799A CN 98124799 A CN98124799 A CN 98124799A CN 1067361 C CN1067361 C CN 1067361C
- Authority
- CN
- China
- Prior art keywords
- temperature
- batio
- major ingredient
- oxide
- sintering
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Images
Abstract
The present invention belongs to the technical field of a capacitor material. A main component of the material is BaTiO3, and a property modifying additive is cobaltous oxide, niobium oxide, rare earth oxide and manganese oxide. The present invention adpots a solid phase synthesis method and a chemical synthesis method as preparation technology. An X7R type MLCC material with good performance can be obtained according to the formula and the technology. The present invention can obviously reduce the synthesizing and firing temperature without combustion adjuvant, the room temperature dielectric constant of the material can reach 4400, and the allowable temperature change rate is less than or equal to +/-15%. Resistivity is greater than 10 <12-13> omega.cm, sparking voltage is greater than 11KV /mm, and the sintering temperature is less than or equal to 1240 DEG C.
Description
The invention belongs to field of capacitor material technology, the composition of particularly a kind of high-performance temperature-stable (X7R) type multi-layer ceramic capacitor material and preparation method's research.
Laminated ceramic capacitor (Multilayer Ceramic Capacitors) is called for short MLCC.It is that electrode materials is replaced in parallel being superimposed together with ceramic body with multilayer, and burns till an integral body simultaneously.According to the international EIA of Electronic Industries Association USA (Electronic Industries Association) standard.X7R type MLCC is meant between temperature range-55～125 ℃, temperature coefficient of capacitance＜± 15%, dielectric loss (DF)≤2.5%.X7R type MLCC divides two big classes by forming: a class is made up of plumbiferous ferroelectrics, and is another kind of with barium titanate (BaTiO
3) be the ferroelectrics composition of the non-plumbous system of base.And the latter is because environmentally safe, and physical strength and reliability be better than the former, and therefore non-lead is BaTiO
3Base X7R type MLCC has broad application prospects.
Non-lead is that X7R type MLCC composition mainly is with BaTiO
3Be base-material, suitably adding niobium (Nb), tantalum (Ta), transition element cobalt (Co), magnesium (Mg), manganese (Mn) etc. and other element is properties-correcting agent (secondary additive), and general sintering temperature height is all more than 1300 ℃.Some adds silicon oxide (SiO
2), bismuth oxide (Bi
2O
3) wait to sintering aid and reduce sintering temperature.
The technology of traditional preparation X7R type MLCC generally is to pass through solid-phase synthesis.Processing step comprise weighing-batch mixing-high temperature synthetic-pulverizing-secondary interpolation-screening-moulding-sintering etc.There is the component skewness in this technology, and the synthesis temperature height is subject to contaminating impurity, shortcomings such as reproducibility difference.And the sintering temperature height, the energy consumption height is unfavorable for technology controlling and process.
Comparatively sophisticated non-lead is that X7R type MLCC product mainly contains following several:
One, United States Patent (USP), U.S.Pat.No, 5086021, people such as Kyoichi Sasaki invent with SiO
2Be sintering agent, can obtain the X7R type MLCC material of room temperature dielectric constant (K) value between 3000～4000 at 1240～1320 ℃ of sintering.
Its two, Japanese Patent (with reference to a day disclosure special permission communique, the spy opens flat 8-180733) the new palace of inventor hero two is with BaTiO
3Be base-material, niobium oxides (Nb
2O
5), zinc oxide (ZnO), yttrium oxide (Y
2O
3) be additive, SiO
2Be sintering aid, can obtain the X7R type MLCC material of K between 3000～4000 at 1170～1210 ℃ of sintering.
Its three, United States Patent (USP), U.S Pat.No 5571767, (Wilson) Wilson invention with BaTiO
3Be major ingredient, add Neodymium trioxide (Nd
2O
3), with bismuth oxide (Bi
2O
3), titanium oxide (TiO
2) and glassy phase plumbous oxide (PbO), Bi
2O
3, SiO
2, TiO
2, aluminum oxide (Al
2O
3) be sintering aid, below 1100 ℃, sintering is prepared X7R type MLCC material dielectric constant and is 3200 to the maximum.
Its four, recently U.S. material is researched and analysed the laboratory and has been reported newest research results.Low fever BaTiO
3Base X7R type MLCC, specific inductivity reaches 4400.But the sintering process complexity needs strict control to burn till for three times, sintering temperature～1110 ℃.
The objective of the invention is for solving or improving the problem that exists in the traditional technology, a kind of composition of temperature-stable multilayer ceramic capacitor material is proposed, this material prescription is simple, it is adjustable to fill a prescription, can utilize the advantage of material self to reduce sintering temperature and do not need to add sintering agent again, the material firing range is wide, and firing temperature is low, it is little to hold the temperature rate, and dielectric loss is little; And the preparation technology's method that proposes is easy, and sintering process is easily controlled, the good uniformity of the material purity of making, and the performance good reproducibility helps improving the reliability of electrical condenser.
The temperature-stable high dielectric multi-layer ceramic capacitor material that the present invention proposes, it is characterized in that, improved the secondary additive of temperature performance is made up of barium titanate major ingredient and being used to, said secondary additive comprises niobium oxides, cobalt oxide and at least a rare earth oxide, and the prescription of said each material is (in a mole):
[100-(a+b+c)]BaTiO
3+aNb
2O
5+bCo
3Ox+cRe
2O
3；
0.1≤a≤5.0 wherein, 0.1≤b≤3.0,0≤c≤2.5,1.0≤a/b≤6.0, Re represents one or more of lanthanon lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), dysprosium (Dy), erbium (Er), ytterbium (Yb) and manganese (Mn).
Described temperature-stable high dielectric multi-layer ceramic capacitor material, major ingredient BaTiO in the prescription
3Shared mole number is 96～99%; The consumption of secondary additive accounts for 1～4mol% of total amount of material.
Two kinds of methods that prepare described multi-layer ceramic capacitor material that the present invention proposes comprise that processing method 1 adopts existing solid phase method synthetic; The chemical method that processing method 2 adopts the present invention to propose is synthetic.
The initial feed of processing method 1 is titanium dioxide (TiO
2), barium carbonate (BaCO
3) oxide compound or the carbonate of required elements such as (analytical pure), be analytical reagent; The secondary additive initial feed is selected niobium oxides (Nb for use
2O
5), cobalt sesquioxide (Co
2O
3) or tricobalt tetroxide (Co
3O
4) and cerium oxide (CeO
2), Praseodymium trioxide (Pr
2O
3), Neodymium trioxide (Nd
2O
3), Samarium trioxide (Sm
2O
3), dysprosium oxide (Dy
2O
3), ytterbium oxide (Yb
2O
3) wait one or more and manganese oxide (MnO in the rare earth oxide
2) (also can not adding).
Present method adopts the synthetic major ingredient BaTiO of traditional solid-phase synthesis
3, adopt prescription of the present invention to carry out secondary and add modification.Do not add any sintering agent, intermediate sintering temperature obtains high-performance X7R type MLCC material.
The concrete processing step of preparation is as follows: (processing parameter in its bracket is only for illustrating) be the synthetic BaTiO of solid phase method 1.
3Material is with initial feed TiO
2, and BaCO
3By the stoichiometric ratio weighing; 2. mixing and ball milling (24 hours, water is medium, granularity is less than 1 μ m); 3. oven dry (70～120 ℃, 6 hours); 4. solid state reaction is synthesized BaTiO
3(1200 ℃, 6 hours); 5. pulverize (granularity is about 1 μ m), and press formula rate adding additive mixing and ball milling simultaneously; 6. dry (70～120 ℃, 6 hours), extrusion forming; 7. sintering (1150～1300 ℃, 30～240 minutes) is the X7R type MLCC material that the present invention develops.
Processing method 2 adopts chemical process synthesizing high pure superfine BaTiO
3Major ingredient.The initial feed that present method adopted is tetrabutyl titanate Ti (OC
4H
9)
4, nitrate of baryta Ba (NO
3)
2, barium acetate Ba (CH
3COO)
2Soluble salt etc. required element.The additive element initial feed is selected Nb for use
2O
5, Co
2O
3, Co
3O
4And CeO
2, Pr
2O
3, Nd
2O
3, Sm
2O
3, Dy
2O
3, Yb
2O
3Deng one or more and the manganese oxide (MnO in the rare earth oxide
2) (also can not adding).
The concrete processing step of preparation is as follows: 1. BaTiO
3Synthesizing of major ingredient: by the stoichiometric ratio wiring solution-forming, Ti or Ba ionic concn are between 0.1～5M in the solution with initial feed; 2. be that precipitation agent carries out co-precipitation with oxalic acid, form the barium titanium oxalate white depositions, 10～80 ℃ of precipitation reaction temperature, the reaction times is 2～4 hours; 3. after throw out being washed with water for several times earlier, wash for several times with ethanol again, under 70～120 ℃, dried through 10～24 hours; 4. 700～1100 ℃ of calcinings down, be incubated 0.5～2 hour, obtain main formula BaTiO
3Superfine powdery material; 5. with secondary additive and main formula powder material uniform mixing, ball milling was a medium with water in 24～72 hours; 6. under 70～120 ℃ of temperature, after 10～24 hours dryings, extrusion forming; 7. under 1150～1300 ℃, through 30～240 minutes sintering.
The present invention has following characteristics:
Use composition of the present invention can go out the X7R type MLCC material of excellent performance, need not to add any sintering agent at≤1240 ℃ temperature sintering.The room temperature dielectric constant of material is up to 4400.Temperature coefficient of capacitance＜± 15% in-55 ℃～125 ℃ scopes and have high insulation resistivity, high-breakdown-voltage, stable performance, physical strength is big, characteristics such as reliability height.
The chemical method that the present invention proposes prepares ultra-fine BaTiO
3Being MLCC has three advantage: a. can reduce sintering temperature, the bullion content of electrode in reducing, thereby reduce cost, b. grain-size is little, and narrow particle size distribution helps the attenuate of thickness of dielectric layers, c. chemical uniformity is good, the good uniformity of material purity, the performance good reproducibility has improved the physical strength and the reliability of material greatly.The insulativity and the voltage endurance of material have been improved.
Description of drawings:
Fig. 1 is the performance diagram that the dielectric constant with temperature of the sample of the embodiment of the invention 1 changes.
Fig. 2 is the temperature variant graphic representation of percentage of capacitance variation with temperature of the sample of the embodiment of the invention 1.
Fig. 3 is the performance diagram that the dielectric constant with temperature of the sample of the embodiment of the invention 2 changes.
Fig. 4 is the temperature variant graphic representation of percentage of capacitance variation with temperature of the sample of the embodiment of the invention 2.
Fig. 5 is the performance diagram that the dielectric constant with temperature of the sample of the embodiment of the invention 3 changes.
Fig. 6 is the temperature variant graphic representation of percentage of capacitance variation with temperature of the sample of the embodiment of the invention 3.
Fig. 7 is the performance diagram that the dielectric constant with temperature of the sample of the embodiment of the invention 4 changes.
Fig. 8 is the temperature variant graphic representation of percentage of capacitance variation with temperature of the sample of the embodiment of the invention 4.
Fig. 9 is the performance diagram that the dielectric constant with temperature of the sample of the embodiment of the invention 5 changes.
Figure 10 is the temperature variant graphic representation of percentage of capacitance variation with temperature of the sample of the embodiment of the invention 5.
Figure 11 is the performance diagram that the dielectric constant with temperature of the sample of the embodiment of the invention 6 changes.
Figure 12 is the temperature variant graphic representation of percentage of capacitance variation with temperature of the sample of the embodiment of the invention 6.
Fig. 1～Figure 12 is corresponding to the temperature characteristics of the specific inductivity of each sample of embodiment 1～6 and the temperature curve that electric capacity varies with temperature rate.Probe temperature is-60 ℃～135 ℃.
The meaning of each parameter representative is as follows in table 1～table 7: K (55 ℃): the specific inductivity of material in the time of-55 ℃; TCC (55 ℃): temperature coefficient of capacitance in the time of-55 ℃; K (25 ℃): the specific inductivity of 25 ℃ of room temperature materials; TCC (25 ℃): temperature coefficient of capacitance in the time of 25 ℃; K (125 ℃): the specific inductivity of material in the time of 125 ℃; TCC (125 ℃): temperature coefficient of capacitance in the time of 125 ℃; Tg δ (25 ℃): dielectric loss during room temperature; TCC (T) %=100 * (ε (T)-ε (25 ℃))/ε (25 ℃): temperature coefficient of capacitance.
Composition of the present invention and preparation method embodiment are respectively described below:
Embodiment 1, is example with Nb, Co, Nd element doping.Fixedly additive Nb, Co consumption are 1.0mol%.Nb∶Co=2.5。Experiment adopting process 2.Prepare X7R type MLCC with chemical process.Initial feed tetrabutyl titanate (Ti (OC
4H
9)
4) 102.1g is dissolved in ethanol, barium acetate (Ba (CH
3COO)
2) be that 76.64g is water-soluble, oxalic acid (H
2C
2O
42H
2O) be dissolved in ethanol for 83.2g.Earlier the tetrabutyl titanate ethanolic soln is added in the oxalic acid ethanolic soln, stir, then the barium acetate aqueous solution is slowly added, form the white precipitate of barium titanium oxalate.Precipitation is by the condition washing of processing method 2, drying, calcining, the barium carbonate powder material of acquisition white.In barium carbonate powder material 20g, add additive by prescription respectively, the content of niobium oxides and cobalt oxide is 1.0mol% in the prescription, the content of Neodymium trioxide is respectively 0.3,0.5,0.7,0.8,0.9,1.0,1.2 and 1.4mol%, is designated as 1-1,1-2,1-3,1-4,1-5,1-6,1-7 and 1-8.Batching is mixed through ball milling, after the drying, and compression moulding under 2MPa pressure, diameter is 10mm, thickness is 1mm.In 1240 ℃ of sintering 4h.Heat-up rate is 6 ℃/min.The ceramics that burns till is measured its dielectric properties behind the silver ink firing up and down.The dielectric properties parameter of the ceramic print that present embodiment obtained sees Table 1.What the curve of Fig. 1 provided is the rational curve of the dielectric constant with temperature variation of present embodiment sample.Fig. 2 provides the temperature variant curve of percentage of capacitance variation with temperature of sample.
Table 1
| Sample | Sintering condition | K | TCC(％) | K℃ | K | TCC(％) | TGδ ℃)(％) |
| -55 | 125℃ | ||||||
| 1-1 | 1240℃/4h | 2981 | -13.9 | 3462 | 4213 | 21.7 | 2.76 |
| 1-2 | 1240℃/4h | 4053 | -2.33 | 4150 | 4601 | 10.9 | 1.31 |
| 1-3 | 1240℃/4h | 4488 | 2.61 | 4374 | 4366 | -0.18 | 1.50 |
| 1-4 | 1240℃/4h | 4356 | 2.93 | 4232 | 3946 | -6.75 | 1.55 |
| 1-5 | 1240℃/4h | 4290 | 0.92 | 4251 | 4186 | -1.53 | 1.38 |
| 1-6 | 1240℃/4h | 4273 | 2.10 | 4185 | 3783 | -9.60 | 1.32 |
| 1-6 | 1240℃/4h | 4464 | -1.82 | 4547 | 3648 | -19.8 | 1.32 |
| 1-8 | 1240℃/4h | 4331 | -2.61 | 4447 | 3339 | -25.9 | 1.25 |
Embodiment 2: solid for mulation major ingredient barium titanate is 98mol%, and the content of niobium oxides and cobalt oxide is 1.0mol%, and Neodymium trioxide is 1.0mol%.Adopting process method 2.Initial feed tetrabutyl titanate (Ti (OC
4H
9)
4) 102.1g is dissolved in ethanol, barium acetate (Ba (CH
3COO)
2) be that 76.64g is water-soluble, oxalic acid (H
2C
2O
42H
2O) be dissolved in ethanol for 83.2g.Earlier the tetrabutyl titanate ethanolic soln is added in the oxalic acid ethanolic soln, stirring obtains the solution of yellow transparent, then the barium acetate aqueous solution is slowly added, and forms the white precipitate of barium titanium oxalate.Precipitation is by the condition washing of processing method 2, drying, calcining, the barium carbonate powder material of acquisition white.Add additive by prescription respectively in barium carbonate powder material 20g, batching is mixed through ball milling, after the drying, and compression moulding under 2MPa pressure, diameter is 10mm, thickness is 1mm.Respectively at 1200 ℃, 1220 ℃, 1240 ℃, 1250 ℃, 1260 ℃ of sintering 2h.Heat-up rate is 6 ℃/min.Measure its dielectric properties behind the ceramics upper and lower surface silver ink firing that burns till.The dielectric properties parameter of the ceramic print that is obtained sees Table 2.What Fig. 3 curve provided is the rational curve of the dielectric constant with temperature variation of present embodiment sample.Fig. 4 provides the temperature variant curve of percentage of capacitance variation with temperature of present embodiment sample.
Table 2
| Sample | Sintering condition | K | TCC(％) | K(25℃) | K | TCC(％) | TGδ ℃)(％) |
| -55 | 125℃ | ||||||
| 2-1 | 1200℃/2h | 2557 | -11.8 | 2901 | 3226 | 11.2 | 6.18 |
| 2-2 | 1220℃/2h | 3147 | -7.69 | 3409 | 3843 | 12.7 | 1.91 |
| 2-3 | 1240℃/2h | 3677 | -0.59 | 3699 | 3891 | 5.19 | 1.86 |
| 2-4 | 1250℃/2h | 3908 | 0.51 | 3888 | 4101 | 14.5 | 1.70 |
| 2-5 | 1260℃/2h | 4571 | 2.21 | 4472 | 3948 | -11.7 | 1.68 |
| 2-6 | 1280℃/2h | 4470 | -2.57 | 4588 | 3602 | -21.5 | 1.45 |
Embodiment 3: to the prescription powder of the embodiment of the invention 2 preparations, behind the 2MPa forming under the pressure, at 1240 ℃ of sintering, soaking time was respectively 2 hours, 3 hours and 4 hours.Its dielectric properties of test behind the ceramics sample silver ink firing that is obtained.Table 3 is listed 1240 ℃ of sintering of present embodiment, the dielectric properties parameter of different soaking time ceramics samples.Fig. 5 and Fig. 6 are respectively the rational curve and the temperature variant curve of percentage of capacitance variation with temperature of the dielectric constant with temperature variation of present embodiment sample.
Table 3
| Sample | Sintering condition | K | TCC(％) | K ℃) | K | TCC(℃) | TGδ ℃)(％) |
| -55 | 125℃ | ||||||
| 3-1 | 1240℃/2h | 3677 | -0.59 | 3699 | 3891 | 5.19 | 1.86 |
| 3-2 | 1240℃/3h | 4003 | 2.95 | 3888 | 3884 | -0.10 | 1.47 |
| 3-3 | 1240℃/4h | 4356 | 2.93 | 4232 | 3946 | -6.75 | 1.55 |
Embodiment 4: the major ingredient barium titanate adopts solid phase synthesis process.Experiment adopting process method 1.Get initial feed titanium dioxide (TiO
2) 48.42g, barium carbonate (BaCO
3) 118.64g, ball milling mixes, and the oven dry back obtains the barium titanate major ingredient in 1200 ℃ of solid state reactions 6 hours.After the ball mill pulverizing, get 20g barium titanate major ingredient respectively, add additive, the consumption of niobium oxides cobalt is 1.0mol%, and the content of Neodymium trioxide is respectively 0.3,0.6,0.75,0.85,0.90,1.0,1.2 and 1.4mol%.Batching is mixed through ball milling, after the drying, and compression moulding under 2MPa pressure, diameter is 10mm, thickness is 1mm.In 1240 ℃ of sintering 2h.Heat-up rate is 6 ℃/min.Measure its dielectric properties behind the ceramics upper and lower surface silver ink firing that burns till.The dielectric properties parameter of the ceramic print that is obtained sees Table 4.What Fig. 7 curve provided is the dielectric temperature characteristic curve of present embodiment sample.Fig. 8 provides the temperature variant curve of percentage of capacitance variation with temperature of this sample.
Table 4
| Sample | Sintering condition | K | TCC(％) | K ℃) | K | TCC(％) | TG (25℃)(％) |
| -55 | 125℃ | ||||||
| 4-1 | 1240℃/2h | 2430 | -13.1 | 2797 | 3344 | 19.5 | 2.80 |
| 4-2 | 1240℃/2h | 3182 | -2.96 | 3279 | 3646 | 11.1 | 1.37 |
| 4-3 | 1240℃/2h | 3602 | 1.18 | 3560 | 3628 | 1.91 | 1.34 |
| 4-4 | 1240℃/2h | 3688 | -0.60 | 3690 | 3283 | -11.0 | 1.53 |
| 4-5 | 1240℃/2h | 3785 | -2.97 | 3901 | 3325 | -14.9 | 1.46 |
| 4-6 | 1240℃/2h | 3857 | 2.17 | 3775 | 3397 | -10.0 | 1.31 |
| 4-7 | 1240℃/2h | 3551 | 3.68 | 3425 | 2788 | -18.6 | 1.10 |
| 4-8 | 1240℃/2h | 4073 | -6.37 | 3829 | 3041 | -20.6 | 1.10 |
Embodiment 5:Nb, Co, Ce element doping system.Fixedly additive Nb, Co consumption are 1.0mol% and 0.3mol%.Adopting process method 2.Prepare X7R type MLCC with chemical process.Initial feed tetrabutyl titanate (Ti (OC
4H
9)
4) 102.1g is dissolved in ethanol, barium acetate (Ba (CH
3COO)
2) be that 76.64g is water-soluble, oxalic acid (H
2C
2O
42H
2O) be dissolved in ethanol for 83.2g.Earlier the tetrabutyl titanate ethanolic soln is added in the oxalic acid ethanolic soln, stir, then the barium acetate aqueous solution is slowly added, form the white precipitate of barium titanium oxalate.Precipitation is by the condition washing of processing method 2, drying, calcining, the barium carbonate powder material of acquisition white.Add Nb, Co by prescription, the content of cerium oxide is respectively 0.6,0.7,0.8mol%.Batching is mixed through ball milling, after the drying, and compression moulding under 2MPa pressure, diameter is 10mm, thickness is 1mm.In 1220 ℃ of sintering 4h.Heat-up rate is 4 ℃/min.Measure its dielectric properties behind the ceramics upper and lower surface silver ink firing that burns till.The dielectric properties parameter of the ceramic print that is obtained sees Table 5.What Fig. 9 curve provided is the dielectric temperature characteristic curve of present embodiment sample.Figure 10 provides the temperature variant curve of percentage of capacitance variation with temperature of this sample.
Table 5
| Sample | Sintering condition | K | TCC(％) | K (25℃) | K | TCC(％) | TG (25℃)(％) |
| -55 | 125℃ | ||||||
| 5-1 | 1220℃/4h | 3582 | -7.89 | 3889 | 3604 | -7.33 | 1.83 |
| 5-2 | 1220℃/4h | 3592 | -13.0 | 4128 | 3631 | -12.0 | 1.76 |
| 5-3 | 1220℃/4h | 3550 | -10.6 | 3971 | 3399 | -14.4 | 1.94 |
Embodiment 6: to the prescription powder of the embodiment of the invention 5 preparation, behind the 2MPa forming under the pressure, 1240 ℃ of sintering 4 hours.Its dielectric properties of test behind the ceramics sample silver ink firing that is obtained.Table 6 is listed the dielectric properties parameter of the ceramics sample that obtains.Figure 11 and Figure 12 are respectively the rational curve and the temperature variant curve of percentage of capacitance variation with temperature of the dielectric constant with temperature variation of present embodiment sample.
Table 6
| Sample | Sintering condition | K | TCC(％) | K (25℃) | K | TCC(％) | TG (25℃)(％) |
| -55 | 125℃ | ||||||
| 6-1 | 1240℃/4h | 3774 | -13.6 | 4370 | 4006 | -8.33 | 1.80 |
| 6-2 | 1240℃/4h | 3693 | -12.4 | 4218 | 3821 | -9.41 | 1.91 |
| 6-3 | 1240℃/4h | 3691 | -13.6 | 4272 | 3852 | -9.83 | 2.0 |
In addition, the insulation resistance of present embodiment stupalith and voltage breakdown test result see Table 7.
Table 7
| Sample | Sintering condition | ρ×10 12(Ω·cm | Voltage breakdown (Kv/mm) |
| 1-3 | 1240℃-4h | 14.5 | 11.6 |
| 1-4 | 1240℃-4h | 20.3 | 11.0 |
| 4-4 | 1240℃-2h | 4.7 | 10.8 |
The various embodiments described above explanation, the adjustment by prescription and technology can obtain high performance barium phthalate base X7R type MLCC material.At 1200～1250 ℃, do not add to have prepared under the condition of sintering aid and satisfy the barium phthalate base MLCC porcelain that the X7R performance index require.The room temperature dielectric constant of wafer sample reaches more than 4400, and temperature coefficient of capacitance is less than 10%, and dielectric loss is less than 1.5%.Insulation resistivity is 10
12～10
13Ω CM, voltage breakdown is greater than 11KV/mm.Utilize prescription of the present invention and technology, chemical method preparation technology particularly, it is low to obtain sintering temperature, and performance is adjustable, and sintering range is wide, stability and the good barium phthalate base X7R type MLCC material of reproducibility.And the uniform crystal particles of material, particle diameter is about 1 micron, physical strength is good, and the reliability height, anti-breakdown characteristics is strong, is a kind of MLCC material with wide application prospect.
Claims (4)
1. temperature-stable high dielectric multi-layer ceramic capacitor material, it is characterized in that, improved the secondary additive of temperature performance is made up of barium titanate major ingredient and being used to, said secondary additive comprises niobium oxides, cobalt oxide and at least a rare earth oxide, and the prescription of said each material is (in a mole):
[100-(a+b+c)]BaTiO
3+aNb
2O
5+bCo
3O
4+cRe
2O
3；
0.1≤a≤5.0 wherein, 0.1≤b≤3.0,0≤c≤2.5,1.0≤a/b≤6.0, Re represents one or more of lanthanon lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), dysprosium (Dy), erbium (Er), ytterbium (Yb) and manganese (Mn).
2. temperature-stable high dielectric multi-layer ceramic capacitor material as claimed in claim 1 is characterized in that, major ingredient BaTiO in the prescription
3Shared mole number is 96～99%; The consumption of secondary additive accounts for 1～4mol% of total amount of material.
3. a processing method for preparing temperature-stable high dielectric multi-layer ceramic capacitor material as claimed in claim 1 is characterized in that, the barium titanate major ingredient is synthetic with solid phase method, and the major ingredient initial feed is titanium dioxide (TiO
2), barium carbonate (BaCO
3) oxide compound or the carbonate of required element, the secondary additive initial feed is selected Nb for use
2O
5, Co
2O
3/ Co
3O
4And CeO
2, Pr
2O
3, Nd
2O
3, Sm
2O
3, Dy
2O
3, Yb
2O
3One or more and manganese oxide; The prescription of said each material is (in a mole):
[100-(a+b+c)]BaTiO
3+aNb
2O
5+bCo
3O
4+cRe
2O
3；
0.1≤a≤5.0 wherein, 0.1≤b≤3.0,0≤c≤2.5,1.0≤a/b≤6.0, Re represents one or more of lanthanon lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), dysprosium (Dy), erbium (Er), ytterbium (Yb) and manganese (Mn);
This technology specifically comprises the steps: 1. with initial feed TiO
2, BaCO
3By the stoichiometric ratio weighing, with the synthetic BaTiO of solid phase method
3Major ingredient; 2. mixing and ball milling; 3. oven dry; 4. solid state reaction is synthesized BaTiO
35. pulverize, and press formula rate adding secondary additive mixing and ball milling simultaneously; 6. dry, extrusion forming; 7. sintering.
4. a processing method for preparing temperature-stable high dielectric multi-layer ceramic capacitor material as claimed in claim 1 is characterized in that, the barium titanate major ingredient is synthetic with chemical method, and the initial feed of this major ingredient is Ti (OC
4H
9)
4, Ba (NO
3)
2, Ba (CH
3COO)
2The analytical pure soluble salt of required element, this secondary additive initial feed is selected Nb for use
2O
5, Co
2O
3, Co
3O
4And CeO
2, Pr
2O
3, Nd
2O
3, Sm
2O
3, Dy
2O
3, Yb
2O
3One or more rare earth oxides and manganese oxide; This technology specifically comprises the steps: 1. BaTiO
3Synthesizing of major ingredient: by the stoichiometric ratio wiring solution-forming, Ti or Ba ionic concn are between 0.1～5M in the solution with initial feed; 2. be that precipitation agent carries out co-precipitation with oxalic acid, form the barium titanium oxalate white depositions, 10～80 ℃ of precipitation reaction temperature, the reaction times is 2～4 hours; 3. after throw out being washed with water for several times earlier, wash for several times with ethanol again, under 70～120 ℃, dried through 10～24 hours; 4. 700～1100 ℃ of calcinings down, be incubated 0.5～2 hour, obtain main formula BaTiO
3Superfine powdery material; 5. with secondary additive and main formula powder material uniform mixing, ball milling was a medium with water in 24～72 hours; 6. under 70～120 ℃ of temperature, after 10～24 hours dryings, extrusion forming; 7. under 1150～1300 ℃, through 30～240 minutes sintering.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN98124799A CN1067361C (en) | 1998-11-20 | 1998-11-20 | Composition of temp.-stabilized type high dielectric multi-layer ceramic capacitor material and preparation process thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN98124799A CN1067361C (en) | 1998-11-20 | 1998-11-20 | Composition of temp.-stabilized type high dielectric multi-layer ceramic capacitor material and preparation process thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN1215038A CN1215038A (en) | 1999-04-28 |
| CN1067361C true CN1067361C (en) | 2001-06-20 |
Family
ID=5228814
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN98124799A Expired - Fee Related CN1067361C (en) | 1998-11-20 | 1998-11-20 | Composition of temp.-stabilized type high dielectric multi-layer ceramic capacitor material and preparation process thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN1067361C (en) |
Families Citing this family (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN100363302C (en) * | 2005-11-21 | 2008-01-23 | 天津大学 | Ceramic capacity medium with wide temp performance and preparation process thereof |
| KR101119804B1 (en) * | 2007-02-22 | 2012-03-22 | 가부시키가이샤 무라타 세이사쿠쇼 | Dielectric ceramic composition and multilayer ceramic capacitor |
| CN102101774B (en) * | 2009-12-22 | 2013-07-03 | 广东风华高新科技股份有限公司 | Reduction-resistant nickel electrode ceramic dielectric material |
| CN104291809B (en) * | 2014-09-26 | 2016-04-20 | 天津大学 | A kind of preparation method of ultrahigh temperature multi-layer ceramic condenser dielectric |
| CN112723876B (en) * | 2020-12-18 | 2023-01-20 | 中国振华集团云科电子有限公司 | Ceramic dielectric ceramic powder and preparation method and application thereof |
| CN113582681B (en) * | 2021-08-26 | 2022-11-29 | 四川特锐祥科技股份有限公司 | High-dielectric-constant high-dielectric-strength dielectric material and preparation method thereof |
| CN113831123B (en) * | 2021-09-07 | 2022-08-12 | 成都宏科电子科技有限公司 | Dielectric ceramic material for barium titanate-based chip capacitor and preparation method and application thereof |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5086021A (en) * | 1990-06-28 | 1992-02-04 | E. I. Du Pont De Nemours And Company | Dielectric composition |
| JPH08180733A (en) * | 1994-12-26 | 1996-07-12 | Kyocera Corp | Dielectric porcelain compound |
| US5571767A (en) * | 1995-08-21 | 1996-11-05 | Ferro Corporation | Low fire X7R dielectric compositions and capacitors made therefrom |
-
1998
- 1998-11-20 CN CN98124799A patent/CN1067361C/en not_active Expired - Fee Related
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5086021A (en) * | 1990-06-28 | 1992-02-04 | E. I. Du Pont De Nemours And Company | Dielectric composition |
| JPH08180733A (en) * | 1994-12-26 | 1996-07-12 | Kyocera Corp | Dielectric porcelain compound |
| US5571767A (en) * | 1995-08-21 | 1996-11-05 | Ferro Corporation | Low fire X7R dielectric compositions and capacitors made therefrom |
Also Published As
| Publication number | Publication date |
|---|---|
| CN1215038A (en) | 1999-04-28 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9266781B2 (en) | Nano complex oxide doped dielectric ceramic material, preparation method thereof and multilayer ceramic capacitors made from the same | |
| JP3161278B2 (en) | Dielectric porcelain composition | |
| JP3470703B2 (en) | Non-reducing dielectric ceramic, multilayer ceramic capacitor using the same, and method for producing non-reducing dielectric ceramic | |
| US11842852B2 (en) | Multilayer ceramic capacitor | |
| CN1172321C (en) | Multi-layer ceramic capacitor material with ultrahigh dielectric constant and temp stability and its preparing process | |
| KR0161348B1 (en) | Non-reduced dielectric ceramic compositions | |
| CN102101775B (en) | Low-loss high-voltage ceramic capacitor dielectric | |
| KR20100133905A (en) | Sintered material for dielectric substance and process for preparing the same | |
| CN1067361C (en) | Composition of temp.-stabilized type high dielectric multi-layer ceramic capacitor material and preparation process thereof | |
| EP0908423B1 (en) | Barium titanate semiconductive ceramic | |
| CN102030526A (en) | Anti-reduction ceramic dielectric material and preparation method thereof | |
| JP3450903B2 (en) | Non-reducing dielectric porcelain composition | |
| Chen et al. | Effect of Y2O3 and Dy2O3 on dielectric properties of Ba0. 7 Sr0. 3 TiO3 series capacitor ceramics | |
| KR20050063466A (en) | A method for dispersed coating additive on ceramic powder | |
| CN1635592A (en) | High dielectric and reduction resistant ceramic material and prepared ceramic capacitor | |
| CN111960817A (en) | Ceramic dielectric material for high-dielectric low-loss high-voltage-resistant capacitor and preparation method thereof | |
| JP3182772B2 (en) | Method for producing non-reducing dielectric ceramic composition | |
| KR100875288B1 (en) | Dielectric composition for MLC with excellent Ｙ5Ｖ properties and manufacturing method thereof | |
| KR910001347B1 (en) | Ultra-low fire ceramic compositions and method for producing thereof | |
| JP2000169221A (en) | Dielectric ceramic and production thereof | |
| KR100568287B1 (en) | A Method for preparing dielectric compositions for Y5V type multilayer ceramic Chip Capacitors | |
| JP2958826B2 (en) | Dielectric porcelain composition | |
| KR890002696B1 (en) | High dielectric constant ceramic material and method of manufacturing the same | |
| JP3052643B2 (en) | Dielectric porcelain composition | |
| JP2621478B2 (en) | High dielectric constant porcelain composition |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C06 | Publication | ||
| PB01 | Publication | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| C19 | Lapse of patent right due to non-payment of the annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |