CN113831123B - Dielectric ceramic material for barium titanate-based chip capacitor and preparation method and application thereof - Google Patents
Dielectric ceramic material for barium titanate-based chip capacitor and preparation method and application thereof Download PDFInfo
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- 229910010293 ceramic material Inorganic materials 0.000 title claims abstract description 71
- 239000003990 capacitor Substances 0.000 title claims abstract description 52
- 229910002113 barium titanate Inorganic materials 0.000 title claims abstract description 44
- JRPBQTZRNDNNOP-UHFFFAOYSA-N barium titanate Chemical compound [Ba+2].[Ba+2].[O-][Ti]([O-])([O-])[O-] JRPBQTZRNDNNOP-UHFFFAOYSA-N 0.000 title claims abstract description 44
- 238000002360 preparation method Methods 0.000 title claims abstract description 12
- 239000011521 glass Substances 0.000 claims abstract description 31
- 239000000919 ceramic Substances 0.000 claims abstract description 30
- 239000000843 powder Substances 0.000 claims abstract description 25
- 238000002156 mixing Methods 0.000 claims abstract description 16
- 229910021193 La 2 O 3 Inorganic materials 0.000 claims abstract description 9
- 238000004519 manufacturing process Methods 0.000 claims abstract description 7
- 239000000654 additive Substances 0.000 claims abstract description 6
- 230000000996 additive effect Effects 0.000 claims abstract description 6
- 238000000034 method Methods 0.000 claims abstract description 5
- 229910004298 SiO 2 Inorganic materials 0.000 claims description 9
- 238000007873 sieving Methods 0.000 claims description 9
- 239000002002 slurry Substances 0.000 claims description 9
- 229910017493 Nd 2 O 3 Inorganic materials 0.000 claims description 6
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 6
- 239000008367 deionised water Substances 0.000 claims description 6
- 229910021641 deionized water Inorganic materials 0.000 claims description 6
- 238000001035 drying Methods 0.000 claims description 6
- 238000000227 grinding Methods 0.000 claims description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- 239000000463 material Substances 0.000 claims description 5
- 238000000498 ball milling Methods 0.000 claims description 3
- 238000001354 calcination Methods 0.000 claims description 3
- 238000003756 stirring Methods 0.000 claims description 3
- 239000002994 raw material Substances 0.000 claims description 2
- 230000000052 comparative effect Effects 0.000 description 10
- 230000008859 change Effects 0.000 description 5
- 239000013078 crystal Substances 0.000 description 5
- 239000000203 mixture Substances 0.000 description 5
- 239000012188 paraffin wax Substances 0.000 description 4
- 230000010287 polarization Effects 0.000 description 3
- 238000005245 sintering Methods 0.000 description 3
- 239000003795 chemical substances by application Substances 0.000 description 2
- 238000005469 granulation Methods 0.000 description 2
- 230000003179 granulation Effects 0.000 description 2
- 230000002401 inhibitory effect Effects 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000003153 chemical reaction reagent Substances 0.000 description 1
- 229910052804 chromium Inorganic materials 0.000 description 1
- 238000001816 cooling Methods 0.000 description 1
- 238000007599 discharging Methods 0.000 description 1
- 230000007613 environmental effect Effects 0.000 description 1
- 230000005621 ferroelectricity Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 229910052745 lead Inorganic materials 0.000 description 1
- 229910052753 mercury Inorganic materials 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 229910052761 rare earth metal Inorganic materials 0.000 description 1
- 230000002269 spontaneous effect Effects 0.000 description 1
- 231100000331 toxic Toxicity 0.000 description 1
- 230000002588 toxic effect Effects 0.000 description 1
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- C04B35/01—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics
- C04B35/46—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates
- C04B35/462—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates
- C04B35/465—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates
- C04B35/468—Shaped ceramic products characterised by their composition; Ceramics compositions; Processing powders of inorganic compounds preparatory to the manufacturing of ceramic products based on oxide ceramics based on titanium oxides or titanates based on titanates based on alkaline earth metal titanates based on barium titanates
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- C—CHEMISTRY; METALLURGY
- C03—GLASS; MINERAL OR SLAG WOOL
- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
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- C03C—CHEMICAL COMPOSITION OF GLASSES, GLAZES OR VITREOUS ENAMELS; SURFACE TREATMENT OF GLASS; SURFACE TREATMENT OF FIBRES OR FILAMENTS MADE FROM GLASS, MINERALS OR SLAGS; JOINING GLASS TO GLASS OR OTHER MATERIALS
- C03C3/00—Glass compositions
- C03C3/04—Glass compositions containing silica
- C03C3/062—Glass compositions containing silica with less than 40% silica by weight
- C03C3/064—Glass compositions containing silica with less than 40% silica by weight containing boron
- C03C3/068—Glass compositions containing silica with less than 40% silica by weight containing boron containing rare earths
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
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Abstract
The invention provides a barium titanate-based dielectric ceramic material for chip capacitors, a preparation method and application thereof, and relates to the technical field of capacitor ceramic materials. Barium titanate-based dielectric ceramic material for chip capacitor, and BaTiO 3 The weight percentage of the additive is 100 percent, and the following components in percentage by weight are added: 0 to 1.70% of La 2 O 3 0 to 1.60% of Nb 2 O 5 0 to 0.40% of CeO 2 0 to 0.12% of MnO 2 、0～0.50％MgCO 3 And 0.3-1.3% of glass powder. The preparation method comprises the following steps: s1: mixing the glass powder components in proportion to prepare glass powder; s2: mixing the obtained glass powder and BaTiO 3 And mixing the rest components in proportion to prepare the dielectric ceramic material. The invention also provides a barium titanate-based dielectric ceramic material for chip capacitors, which is prepared by the method and is applied to the production of X7R-502 dielectric ceramics. The dielectric ceramic material for the barium titanate-based chip capacitor can be prepared, which has higher dielectric constant and smaller dielectric loss under 1MHz on the basis of meeting the temperature characteristic of X7R.
Description
Technical Field
The invention relates to the technical field of capacitor ceramic materials, in particular to a barium titanate-based dielectric ceramic material for chip capacitors and a preparation method and application thereof.
Background
The chip capacitor has the advantages of small volume, stable electrical performance, high reliability and the like, and is suitable for a high-frequency electronic circuit of a gold wire bonding process; the supporting material for producing the chip capacitor needs to meet the conditions of high dielectric constant, low dielectric loss and the like under the condition of high frequency (1 MHz); the supporting material for producing the chip capacitor generally uses a dielectric ceramic material with X7R characteristics.
At present, the dielectric constant of the existing dielectric ceramic material with the X7R characteristic is low and generally difficult to reach 5000, the dielectric loss is also high, and the production requirement of the highest-end model product of the chip capacitor cannot be met.
Disclosure of Invention
The first purpose of the invention is to provide a dielectric ceramic material for barium titanate-based chip capacitors, which can have higher dielectric constant and smaller dielectric loss at 1MHz on the basis of meeting the temperature characteristic of X7R; the production requirement of the highest-end model product of the chip capacitor can be met.
The second purpose of the invention is to provide a preparation method of the dielectric ceramic material for the barium titanate-based chip capacitor, and the dielectric ceramic material for the barium titanate-based chip capacitor, which is prepared by the preparation method, has higher dielectric constant and smaller dielectric loss at 1 MHz.
The third purpose of the invention is to provide the application of the dielectric ceramic material for the barium titanate-based chip capacitor, which can be effectively applied to the production of X7R-502 dielectric ceramic.
The embodiment of the invention is realized by the following technical scheme:
barium titanate-based dielectric ceramic material for chip capacitor, and BaTiO 3 The weight percentage of the additive is 100 percent, and the following components in weight percentage are added: 0 to 1.70% of La 2 O 3 0 to 1.60% of Nb 2 O 5 0 to 0.40% of CeO 2 0 to 0.12% of MnO 2 、0~0.50% MgCO 3 And 0.3-1.3% of glass powder.
Further, the glass powder comprises the following components in percentage by weight: 10-20% of Nd 2 O 3 35 to 45 percent of ZnO and 15 to 25 percent of SiO 2 And 15-25% of B 2 O 3 。
The chip capacitor product can be applied to a high-frequency circuit, the dielectric loss of the dielectric ceramic material of a barium titanate system can be multiplied under 1MHz, the heating failure of the product can be caused, and in order to reduce the dielectric loss of the dielectric ceramic material under 1MHz, the barium titanate-based chip capacitor disclosed by the inventionSelecting corresponding components and content ratio by using a dielectric ceramic material, and adding a modified substance MnO into a main crystal phase system 2 、MgCO 3 And rare earth element (La) 3+ 、Nd 3+ ) Etc. can ensure BaTiO 3 Spontaneous polarization while inhibiting BaTiO 3 The crystal grains grow abnormally, the relaxation polarization caused by space charge polarization is reduced, a compact ceramic body structure is obtained, the dielectric constant of the dielectric ceramic material for the barium titanate-based chip capacitor reaches 5000, and the dielectric loss of the dielectric ceramic material for the barium titanate-based chip capacitor under high frequency (1 MHz) is reduced;
meanwhile, the glass powder formed by adding a certain component and content ratio into the dielectric ceramic material for the barium titanate-based chip capacitor can play a role in shifting peak pressure and also can play a role in mutually linking the components, so that the density of the dielectric ceramic material for the barium titanate-based chip capacitor is increased, the dielectric constant of the dielectric ceramic material for the barium titanate-based chip capacitor is increased, and the dielectric loss of the dielectric ceramic material for the barium titanate-based chip capacitor is reduced.
Further, BaTiO 3 The crystal form of (A) can change along with the change of temperature, so that the dielectric constant of the crystal form changes in a nonlinear way, the X7R characteristic is difficult to achieve within the temperature range of-55 to 125 ℃, and the crystal form is in a BaTiO state 3 In which Nd is introduced 2 O 3 、ZnO、SiO 2 And B 2 O 3 Glass powder of composition La 2 O 3 、CeO 2 、Nb 2 O 5 And SiO 2 Belongs to a peak shifting agent and a broadening agent, and enables BaTiO to be used without excessively inhibiting the ferroelectricity thereof 3 The Curie peak is dispersed and moves to the middle part, so that the dielectric constant is high and smooth; the dielectric ceramic material for the barium titanate-based chip capacitor has the dielectric constant of more than 5000, and simultaneously, the change rate of capacitance along with temperature is optimized, so that the X7R characteristic is achieved.
The preparation method of the dielectric ceramic material for the barium titanate-based chip capacitor comprises the following steps:
s1: mixing the components of the glass powder in proportion to prepare the glass powder;
s2: the prepared glassPowder and BaTiO 3 And mixing the rest components in proportion to prepare the dielectric ceramic material.
Further, Nd is added in step S1 2 O 3 、ZnO、SiO 2 And B 2 O 3 Mixing according to a ratio, sieving for 4-5 times by using a 200-mesh sieve, placing in a zirconia sagger, calcining at 900-970 ℃, grinding for 1-2 hours by using deionized water as a medium by using a stirring mill, drying at 100-140 ℃, and sieving by using a 200-mesh sieve to obtain the glass powder.
Further, the glass frit and BaTiO prepared in the step S2 3 、CeO 2 、La 2 O 3 、Nb 2 O 5 、MnO 2 、MgCO 3 Adding the vertical vibration mill in sequence from large to small according to the proportion, and mixing the following raw materials: deionized water: and (3) vibrating and grinding the ball-milling medium =1:1.4:5 for 15-20 h in mass ratio, processing the ground material through a 320-mesh sieve to obtain ceramic slurry, drying the ceramic slurry at 100-140 ℃, and sieving the ceramic slurry through a 200-mesh sieve to obtain the dielectric ceramic material.
A dielectric ceramic material for a barium titanate-based chip capacitor is applied to production of X7R-502 dielectric ceramic, the prepared dielectric ceramic material is added with 7-8 wt% of paraffin for granulation, a hydraulic press is used for preparing a wafer with the diameter of 15mm and the thickness of 1.3-1.7 mm, then the temperature is increased to 450 ℃ at the speed of 1.5 ℃/min to discharge the paraffin, then the temperature is increased to 1350-1390 ℃ at the speed of 3 ℃/min to be sintered for 3h and then cooled with a furnace, and the X7R-502 dielectric ceramic is prepared.
The technical scheme of the embodiment of the invention at least has the following advantages and beneficial effects:
1. the dielectric ceramic material for the barium titanate-based chip capacitor is prepared from corresponding components in percentage by weight, has a high dielectric constant of more than 5000 on the basis of reaching the X7R characteristic, and has low dielectric loss at high frequency (1 MHz).
2. The invention can prepare the dielectric ceramic material for the barium titanate-based chip capacitor with higher dielectric constant and smaller dielectric loss under 1 MHz.
3. The dielectric ceramic material for the barium titanate-based chip capacitor, which is prepared by the invention, has higher dielectric constant and smaller dielectric loss at 1MHz, can be applied to producing X7R-502 dielectric ceramic.
4. The dielectric ceramic material for the barium titanate-based chip capacitor does not select toxic and harmful substances such as Pb, Cr, Hg and the like, and meets the environmental protection requirement of European Union ROHS instruction.
Drawings
FIG. 1 is a Scanning Electron Microscope (SEM) image of the dielectric ceramic material prepared in example 1.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present invention clearer, the technical solutions in the embodiments of the present invention will be clearly and completely described below. The examples, in which specific conditions are not specified, were conducted under conventional conditions or conditions recommended by the manufacturer. The reagents or instruments used are not indicated by the manufacturer, and are all conventional products available commercially.
The dielectric ceramic material for barium titanate-based chip capacitors provided by the embodiments of the present invention, and the preparation method and application thereof are specifically described below.
Examples 1 to 10
Examples 1 to 10 provide barium titanate-based dielectric ceramic materials for chip capacitors, and BaTiO 3 The weight percentage of the additive is 100%, and the weight percentage of the components added is shown in table 1 and table 2.
TABLE 1 glass frit compositions
TABLE 2 barium titanate-based dielectric ceramic Material composition for chip capacitors
Embodiments 1 to 10 further provide a method for preparing a dielectric ceramic material for a barium titanate-based chip capacitor, including the steps of:
s1: adding Nd 2 O 3 、ZnO、SiO 2 And B 2 O 3 Mixing according to a ratio, sieving for 4-5 times by using a 200-mesh sieve, placing in a zirconia sagger, calcining at 900-970 ℃, grinding for 1-2 hours by using a stirring mill by using deionized water as a medium, drying at 100-140 ℃, and sieving by using a 200-mesh sieve to obtain glass powder;
s2: mixing the obtained glass powder and BaTiO 3 、CeO 2 、La 2 O 3 、Nb 2 O 5 、MnO 2 、MgCO 3 Adding the vertical vibration mill in sequence from large to small according to the proportion, and mixing the following powder: deionized water: and (3) vibrating and grinding the ball-milling medium =1:1.4:5 for 15-20 h in mass ratio, processing the ground material through a 320-mesh sieve to obtain ceramic slurry, drying the ceramic slurry at 100-140 ℃, and sieving the ceramic slurry through a 200-mesh sieve to obtain the dielectric ceramic material. The Scanning Electron Microscope (SEM) image of the dielectric ceramic material prepared in example 1 is shown in FIG. 1.
The embodiment 1 to 10 also provides application of the dielectric ceramic material for the barium titanate-based chip capacitor in producing X7R-502 dielectric ceramic, the prepared dielectric ceramic material is added with 7 to 8wt% of paraffin for granulation, a hydraulic press is used for preparing a wafer with the diameter of 15mm and the thickness of 1.3 to 1.7mm, then the temperature is increased to 450 ℃ at the speed of 1.5 ℃/min for discharging paraffin, then the temperature is increased to 1350 to 1390 ℃ at the speed of 3 ℃/min for sintering for 3h, and furnace cooling is carried out to prepare the X7R-502 dielectric ceramic.
Comparative examples 1 to 8
Comparative examples 1 to 8 provide a dielectric ceramic material comprising BaTiO 3 The weight percentage of (b) is 100%, and the components added in weight percentage are shown in table 3 and table 4.
TABLE 3 glass frit compositions
TABLE 4 dielectric ceramic Material composition
The preparation method of the dielectric ceramic material provided in the comparative examples 1 to 8 is the same as that of the examples 1 to 10, and the dielectric ceramic is prepared by the preparation method of the examples 1 to 10.
Experimental example 1
The dielectric properties of X7R-502 dielectric ceramics A1, A2 and A3 prepared in example 1 at sintering temperatures of 1350 ℃, 1370 ℃ and 1390 ℃ respectively and the dielectric ceramics B1, B2 and B3 prepared in American FerroX7R-502 at sintering temperatures of 1350 ℃, 1370 ℃ and 1390 ℃ respectively were tested by a dielectric temperature spectrometer, and the results are shown in Table 5.
TABLE 5 dielectric Property Table
As can be seen from Table 5, the dielectric constant of the X7R-502 dielectric ceramic prepared by the invention is higher than that of the dielectric ceramic of FerroX7R-502 in the United states and is more than 5000; the dielectric loss is less than that of the dielectric ceramic of FerroX7R-502 in the United states, the dielectric loss of the dielectric ceramic is less than 0.6% under 1KHz, and the dielectric loss is less than 1.8% under 1 MHz; the change rate of the capacitance along with the temperature is small within the temperature range of-55 to 125 ℃, and the temperature characteristic of X7R is met.
Experimental example 2
The dielectric properties of the X7R-502 dielectric ceramics prepared in examples 1-10 and the dielectric ceramics prepared in comparative examples 1-8 were measured by a dielectric temperature spectrometer, and the results are shown in Table 6.
TABLE 6 dielectric Property Table
As can be seen from table 6, the dielectric ceramic material of comparative example 1 has no glass frit, the dielectric ceramic material of comparative example 2 has no glass frit and has different components, the dielectric ceramic material of comparative example 3 has no glass frit and has different components, the dielectric ceramic material of comparative example 4 has different components of glass frit, the dielectric ceramic material of comparative example 5 has different components, and the dielectric ceramic materials of comparative examples 6 to 8 have different content ratios of the components; the dielectric ceramic X7R-502 prepared from the dielectric ceramic material provided by the invention has high dielectric constant which is higher than 5000; the dielectric loss is small, the dielectric loss of the dielectric ceramic is less than 0.6% under 1KHz, and the dielectric loss is less than 1.8% under 1 MHz; the change rate of the capacitance along with the temperature is small within the temperature range of-55 to 125 ℃, and the temperature characteristic of X7R is met.
In conclusion, the dielectric ceramic material for the barium titanate-based chip capacitor, which is provided by the application, has the advantages that the prepared X7R-502 dielectric ceramic has higher dielectric constant and smaller dielectric loss under 1MHz on the basis of meeting the temperature characteristic of X7R; the production requirement of the highest-end model product of the chip capacitor can be met.
The above description is only a preferred embodiment of the present invention and is not intended to limit the present invention, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, or improvement made within the spirit and principle of the present invention should be included in the protection scope of the present invention.
Claims (10)
1. The barium titanate-based dielectric ceramic material for chip capacitor is characterized by comprising BaTiO 3 The weight percentage of the additive is 100 percent, and the following components in percentage by weight are added: 0.61-1.70% of La 2 O 3 0.54 to 1.60% of Nb 2 O 5 0.05 to 0.40 percent of CeO 2 0.08 to 0.12% of MnO 2 、0.03~0.50% MgCO 3 And 0.3-1.3% of glass powder.
2. The barium titanate-based dielectric ceramic material for chip capacitors as claimed in claim 1, wherein said glass powder comprises the following components in percentage by weight: 10-20% of Nd 2 O 3 35 to 45 percent of ZnO and 15 to 25 percent of SiO 2 And 15-25% of B 2 O 3 。
3. The barium titanate-based dielectric ceramic material for chip capacitors as claimed in claim 2, wherein the glass powder comprises the following components in percentage by weight: 16% Nd 2 O 3 42% of ZnO, 18% of SiO 2 And 24% of B 2 O 3 。
4. The barium titanate-based dielectric ceramic material for chip capacitors as claimed in claim 2, wherein said glass powder comprises the following components in percentage by weight: 13% of Nd 2 O 3 40% of ZnO, 24% of SiO 2 And 23% of B 2 O 3 。
5. The barium titanate-based dielectric ceramic material for chip capacitors as claimed in any one of claims 1 to 4, wherein BaTiO is used as the dielectric ceramic material 3 The weight percentage of the additive is 100 percent, and the following components in percentage by weight are added: 0.61% of La 2 O 3 0.54% of Nb 2 O 5 0.05% of CeO 2 0.09% MnO 2 、0.03% MgCO 3 And 0.5% of glass powder.
6. The barium titanate-based dielectric ceramic material for chip capacitors as claimed in any one of claims 1 to 4, wherein BaTiO is used as the dielectric ceramic material 3 The weight percentage of the additive is 100 percent, and the following components in percentage by weight are added: 0.87% of La 2 O 3 0.9% of Nb 2 O 5 0.34% of CeO 2 0.11% MnO 2 、0.28% MgCO 3 And 0.8% of glass powder.
7. A preparation method of the dielectric ceramic material for the barium titanate-based chip capacitor as claimed in any one of claims 1 to 6, characterized by comprising the following steps:
s1: mixing the components of the glass powder in proportion to prepare the glass powder;
s2: mixing the obtained glass powder and BaTiO 3 And the restThe dielectric ceramic material is prepared by mixing the components in proportion.
8. The method for preparing a dielectric ceramic material for barium titanate-based chip capacitors as claimed in claim 7, wherein said step S1 is carried out by adding Nd 2 O 3 、ZnO、SiO 2 And B 2 O 3 Mixing according to a ratio, sieving for 4-5 times by using a 200-mesh sieve, placing in a zirconia sagger, calcining at 900-970 ℃, grinding for 1-2 hours by using deionized water as a medium by using a stirring mill, drying at 100-140 ℃, and sieving by using a 200-mesh sieve to obtain the glass powder.
9. The method for preparing a dielectric ceramic material for barium titanate-based chip capacitors as claimed in claim 7, wherein said step S2 comprises mixing the glass powder with BaTiO 3 、CeO 2 、La 2 O 3 、Nb 2 O 5 、MnO 2 、MgCO 3 Adding the vertical vibration mill in sequence from large to small according to the proportion, and mixing the following raw materials: deionized water: and (3) vibrating and grinding the ball-milling medium =1:1.4:5 for 15-20 h in mass ratio, processing the ground material through a 320-mesh sieve to obtain ceramic slurry, drying the ceramic slurry at 100-140 ℃, and sieving the ceramic slurry through a 200-mesh sieve to obtain the dielectric ceramic material.
10. Use of the barium titanate-based dielectric ceramic material for chip capacitors as claimed in any one of claims 1 to 6 or the barium titanate-based dielectric ceramic material for chip capacitors as claimed in any one of claims 7 to 9 in the production of X7R-502 dielectric ceramic.
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