CN1397957A - Multi-layer ceramic capacitor material with ultrahigh dielectric constant and temp stability and its preparing process - Google Patents

Multi-layer ceramic capacitor material with ultrahigh dielectric constant and temp stability and its preparing process Download PDF

Info

Publication number
CN1397957A
CN1397957A CN 02125720 CN02125720A CN1397957A CN 1397957 A CN1397957 A CN 1397957A CN 02125720 CN02125720 CN 02125720 CN 02125720 A CN02125720 A CN 02125720A CN 1397957 A CN1397957 A CN 1397957A
Authority
CN
China
Prior art keywords
temperature
ceramic capacitor
hours
multilayer ceramic
oxide
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Granted
Application number
CN 02125720
Other languages
Chinese (zh)
Other versions
CN1172321C (en
Inventor
王晓慧
陈仁政
桂治轮
李詜
李龙土
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Tsinghua University
Original Assignee
Tsinghua University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Tsinghua University filed Critical Tsinghua University
Priority to CNB021257205A priority Critical patent/CN1172321C/en
Publication of CN1397957A publication Critical patent/CN1397957A/en
Application granted granted Critical
Publication of CN1172321C publication Critical patent/CN1172321C/en
Anticipated expiration legal-status Critical
Expired - Fee Related legal-status Critical Current

Links

Images

Landscapes

  • Ceramic Capacitors (AREA)
  • Compositions Of Oxide Ceramics (AREA)
  • Inorganic Insulating Materials (AREA)

Abstract

本发明公开了属于陶瓷材料制备技术的一种超高介电常数、温度稳定型多层陶瓷电容器材料及制备方法。该材料的主要成份为钛酸钡、金属粉、以氧化钴和氧化铌及稀土氧化物的二次添加剂。采用固相合成法及化学合成法制备钛酸钡,并与金属粉、二次添加剂混合,加压成型,烧结成为多层陶瓷电容器材料。制备工艺中无需加入助烧剂,可以显著降低合成及烧成温度。材料的室温介电常数可以控制在4000和42000之间,容温变化率≤±15%。烧结温度可控制在1280℃以下。是具有广泛应用前景的高性能的多层陶瓷电容器材料。

The invention discloses an ultra-high dielectric constant, temperature-stable multilayer ceramic capacitor material and a preparation method, which belong to the preparation technology of ceramic materials. The main components of the material are barium titanate, metal powder, cobalt oxide, niobium oxide and secondary additives of rare earth oxides. The barium titanate is prepared by a solid phase synthesis method and a chemical synthesis method, mixed with metal powder and secondary additives, pressurized and sintered to form a multilayer ceramic capacitor material. There is no need to add a sintering aid in the preparation process, which can significantly reduce the synthesis and sintering temperature. The room-temperature dielectric constant of the material can be controlled between 4000 and 42000, and the capacity temperature change rate is ≤±15%. The sintering temperature can be controlled below 1280°C. It is a high-performance multilayer ceramic capacitor material with wide application prospects.

Description

Ultra-high dielectric coefficient, temperature-stable multilayer ceramic capacitor material and preparation method thereof
Technical field
The invention belongs to the capacitor material preparing technical field, particularly have a kind of ultra-high dielectric coefficient, temperature-stable multilayer ceramic capacitor material of ultra-high dielectric coefficient, temperature stabilization and preparation method thereof.
Technical background
Multilayer ceramic capacitor is that electrode material is replaced in parallel being superimposed together with ceramic body with multilayer, and burns till an integral body simultaneously.According to the international EIA of Electronic Industries Association standard.Its capacitance is meant that the capacitance with 25 ℃ is a benchmark, within the scope of from-55 to+125 ℃ of temperature, and temperature coefficient of capacitance<± 15%, dielectric loss (DF)≤2.5%.Multilayer ceramic capacitor is divided into two big classes by composition: a class is made up of leaded ferroelectric, and is another kind of with BaTiO 3The ferroelectric of the non-plumbous system of base is formed.And the latter is because environmentally safe, and mechanical strength and reliability be better than the former, and therefore non-lead is BaTiO 3Base has broad application prospects.Traditional non-lead is that the composition of multi-layer ceramic capacitor material mainly is with BaTiO 3Be base-material, suitably adding niobium (Nb), tantalum (Ta), magnesium (Mg), transition elements cobalt (Co), manganese (Mn) etc. and other element is modifier (secondary additive), and general sintering temperature height is all more than 1300 ℃.Some also adds silica (SiO 2), bismuth oxide (Bi 2O 3) wait sintering aid to reduce sintering temperature.Preparation technology passes through solid-phase synthesis.Processing step comprise weighing-batch mixing-high temperature synthetic-pulverizing-secondary interpolation-screening-moulding-sintering etc.There is the component skewness in this technology, and the synthesis temperature height is subject to contaminating impurity, shortcomings such as reproducibility difference.And the sintering temperature height, the energy consumption height is unfavorable for technology controlling and process.Room temperature dielectric constant with the ceramic material of barium phthalate base multilayer ceramic capacitor does not surpass 5000.Comparatively Cheng Shu product is as United States Patent (USP), U.S Pat.No5571767, (Wilson) the Wilson invention with BaTiO 3Be major ingredient, add neodymia, with Bi 2O 3, TiO 2And glassy phase PbO, Bi 2O 3, SiO 2, TiO 2, Al 2O 3Be sintering aid, under 1100 ℃, the multi-layer ceramic capacitor material of sintering preparation, dielectric constant is 3200 to the maximum.U.S. material is researched and analysed the BaTiO that the low fever has been reported in the laboratory 3Quito layer ceramic capacitor material, its dielectric constant reaches 4400, but the sintering process complexity, needs strict control, burns till sintering temperature~1110 ℃ for three times.
Summary of the invention
The purpose of this invention is to provide a kind of ultra-high dielectric coefficient, temperature-stable multilayer ceramic capacitor material and preparation method thereof, described multi-layer ceramic capacitor material mainly is made up of barium titanate, metal dust and secondary additive.Described multi-layer capacity modulator material is to be major ingredient with the barium titanate, adds to be used to improve the metal powder of dielectric property, and the secondary additive that is used to improve temperature performance, with the prescription of mol ratio is:
X ([100-(a+b+c)] BaTiO 3+ a Nb 2O 5+ b Co 3O 4+ c Re 2O 3+ d MnO 2The Me of)+(1-x), 0.5≤x≤1.0 wherein, 0.1≤a≤3.0,0.1≤b≤1.5,0.1≤c≤1.2,1.0≤a/b≤5.0, Me represents argent (Ag), palladium (Pd), silver palladium alloy (Ag-Pd), Re represents yttrium (Y), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), dysprosium (Dy), erbium (Er) and ytterbium (Yb), wherein manganese oxide (MnO 2) add in right amount or do not add and all can.
Described major ingredient BaTiO 3Shared molal quantity is 50-99%; The shared molal quantity of described metal dust is 0-49%; Be the 1-3 kind of silver, palladium, silver palladium alloy, the consumption of secondary additive accounts for the 0.5-4mol% of total amount of material.Its secondary additive comprises niobium oxide (Nb 2O 5), cobalt sesquioxide (Co 2O 3) or cobaltosic oxide (Co 3O 4) and rare earth oxide yittrium oxide (Y 2O 3), cerium oxide (CeO 2), praseodymium oxide (Pr 2O 3), neodymia (Nd 2O 3), samarium oxide (Sm 2O 3), dysprosia (Dy 2O 3), ytterbium oxide (Yb 2O 3) in the 1-3 kind.
Described ultra-high dielectric coefficient, temperature-stable multilayer ceramic capacitor preparation methods are: preparation major ingredient BaTiO 3, again by prescription x ([100-(a+b+c)] BaTiO 3+ a Nb 2O 5+ b Co 3O 4+ c Re 2O 3+ dMnO 2The Me of)+(1-x), ball milling, drying, moulding, sintering formed after proportioning was mixed.
Step of preparation process is as follows:
1. solid phase method synthesizes BaTiO 3Material: with initial feed TiO 2, and BaCO 3By the stoichiometric proportion weighing, be medium mixing and ball milling 24 hours with water, reach its granularity less than 1 μ m after, under 70~120 ℃ of temperature, dry by the fire 6 hours, again under 1200 ℃ of temperature, solid phase reaction is synthesized BaTiO in 6 hours 3
2. also pressing formula rate and add metal dust, secondary additive mixing, is medium ball milling 24-72 hour with water;
3. under 70~120 ℃ of temperature, dry moulding in 6 hours;
4 sintering are 1150~1300 ℃ temperature range, and sintering 30~240 minutes promptly gets multi-layer ceramic capacitor material behind the natural cooling.
Described barium titanate BaTiO 3Be to adopt butyl titanate (Ti (OC 4H 9) 4), barium nitrate (Ba (NO 3) 2), barium acetate (Ba (CH 3COO) 2) chemically synthetic.Its synthesis technique is: by the stoichiometric proportion wiring solution-forming, Ti or Ba ion concentration are between 0.1~5M in the solution with three kinds of raw materials; With oxalic acid is that precipitation reagent carries out co-precipitation, forms the barium titanium oxalate white depositions, 10~80 ℃ of precipitation reaction temperature, and the reaction time is 2~4 hours; Sediment earlier with behind the deionized water wash several, is washed for several times with ethanol again, under 70~120 ℃, dried through 10~24 hours; And 700~1100 ℃ of calcinings down, be incubated after 0.5~2 hour, obtain the material B aTiO of superfine powder 3With secondary additive, metal dust and its even mixing, be medium ball milling 24~72 hours then with water; Under 70~120 ℃ after 10~24 hours dryings, extrusion forming, sintering, natural cooling promptly get ultra-high dielectric coefficient, temperature-stable multilayer ceramic capacitor material.
Described BaTiO 3Major ingredient directly and metal dust, additive mix, be medium ball milling 24-72 hour with the absolute ethyl alcohol; Under 50~70 ℃, after 10~24 hours dryings, extrusion forming, and under 1150~1300 ℃, through 30~240 minutes sintering, natural cooling promptly got ultra-high dielectric coefficient, temperature-stable multilayer ceramic capacitor material.
Described BaTiO 3Salt, additive that major ingredient and metal oxide or other easily are decomposed into metal mix, and are medium ball milling 24~72 hours with the absolute ethyl alcohol; Under 50~70 ℃, through 10~24 hours dryings; Under 300 ~ 500 ℃, this kind of pre-burning powder makes wherein metal oxide or slaine decomposite metal dust, extrusion forming then; Under 1150~1300 ℃, through 30~240 minutes sintering, natural cooling promptly got multi-layer ceramic capacitor material.Described metal dust is that metal oxide or other labile slaine are silver oxide (Ag 2O), silver carbonate (Ag 2CO 3), silver nitrate (AgNO 3).
The invention has the beneficial effects as follows, use technology of the present invention to need not to add any sintering agent, just can go out ultra-high dielectric coefficient, the temperature-stable multilayer ceramic capacitor material of excellent performance at≤1280 ℃ sintering temperature, the room temperature dielectric constant of material can be controlled between 4400~42000, temperature coefficient of capacitance<± 15% in-55 ℃~+ 125 ℃ scopes, and have 10 12~10 13The high insulation resistivity of Ω CM, stable performance, puncture voltage is greater than 5KV/mm, and dielectric loss is little, and mechanical strength is big, characteristics such as reliability height, good uniformity.Preparation technology of the present invention is easy, utilizes the advantage of material self to reduce sintering temperature, and firing range is wide, and it is simply adjustable to fill a prescription, and sintering process is easily controlled.
Description of drawings
Fig. 1 is the characteristic curve corresponding to the sample dielectric constant with temperature variation of embodiment 1.
Fig. 2 is the temperature variant characteristic curve of sample percentage of capacitance variation with temperature corresponding to embodiment 1.
Fig. 3 is the characteristic curve corresponding to the sample dielectric constant with temperature variation of embodiment 2.
Fig. 4 is the temperature variant characteristic curve of sample percentage of capacitance variation with temperature corresponding to embodiment 2.
Fig. 5 is the characteristic curve corresponding to the sample dielectric constant with temperature variation of embodiment 3.
Fig. 6 is the temperature variant characteristic curve of sample percentage of capacitance variation with temperature corresponding to embodiment 3.
Fig. 7 is the characteristic curve corresponding to the sample dielectric constant with temperature variation of embodiment 4.
Fig. 8 is the temperature variant characteristic curve of sample percentage of capacitance variation with temperature corresponding to embodiment 4.
Fig. 9 is the characteristic curve corresponding to the sample dielectric constant with temperature variation of embodiment 5.
Figure 10 is the temperature variant characteristic curve of sample percentage of capacitance variation with temperature corresponding to embodiment 5.
Embodiment
Fig. 1~Figure 10 shows that is according to each sample (shown in the table 1-table 5) temperature characteristics of dielectric constant and the temperature curve that electric capacity varies with temperature rate of the embodiment 1~5 that preparation method of the present invention did.Its probe temperature is-60 ℃~130 ℃.ε is the dielectric constant of material in the table; TCC: temperature coefficient of capacitance;
Tg δ (25 ℃): dielectric loss during room temperature;
TCC(T)%=100×(ε(T)-ε(25℃))/ε(25℃)。
In conjunction with top test curve figure, exemplify following embodiment and respectively the present invention illustrated:
Embodiment 1, is example with Nh, Co, Nd element doping.Fixedly additive Nb, Co consumption are 1.0mol%.Nb∶Co=2.5。Barium titanate BaTiO 3Major ingredient adopts chemical synthesis process to produce its initial feed butyl titanate (Ti (OC 4H 9) 4) 102.1g is dissolved in ethanol, barium acetate (Ba (CH 3COO) 2) be that 76.64g is water-soluble, oxalic acid (H 2C 2O 42H 2O) be dissolved in ethanol for 83.2g.Earlier the butyl titanate ethanolic solution is added in the oxalic acid ethanolic solution, stir, then the barium acetate aqueous solution is slowly added, form the white precipitate of barium titanium oxalate.Sediment is earlier with the washed with de-ionized water several, and with after the ethanol cleaning for several times, drying is calcined, and obtains white barium carbonate powder material again.In barium carbonate powder material 20g, add secondary additive by prescription respectively, the content of niobium oxide and cobalt oxide is 1.0mol% in the prescription, the content of neodymia is respectively 0.3,0.5,0.7,0.8,0.9 and 1.0mol%, is designated as 1-1,1-2,1-3,1-4,1-5,1-6.Batching is mixed through ball milling, after the drying, and compression moulding under 2MPa pressure, diameter is 10mm, thickness is 1mm.In 1240 ℃ of sintering 4h.Programming rate is 6 ℃/min.The ceramics that burns till is measured its dielectric property behind the silver ink firing up and down.The dielectric property parameter of the ceramic print that is obtained sees Table 1.What Fig. 1 curve provided is the dielectric temperature characteristic curve of sample.Fig. 2 provides the temperature coefficient of capacitance curve of sample.
Embodiment 2: fixing prescription major ingredient barium titanate is 98mol%, and the content of niobium oxide and cobalt oxide is 1.0mol%, and neodymia is 1.0mol%.Barium titanate adopts the chemical synthesis of embodiment 1 to produce.Press embodiment 1 prescription respectively and add secondary additive in barium carbonate powder material 20g, batching is mixed through ball milling, after the drying, and compression moulding under 2MPa pressure, diameter is 10mm, thickness is 1mm.Respectively at 1200 ℃, 1220 ℃, 1240 ℃, 1250 ℃, 1260 ℃, 1280 ℃ of sintering 2h.Programming rate is 6 ℃/min.Measure its dielectric property behind the ceramics upper and lower surface silver ink firing that burns till.The dielectric property parameter of the ceramic print that is obtained sees Table 2.What Fig. 3 curve provided is the dielectric temperature characteristic curve of sample.Fig. 4 provides the temperature coefficient of capacitance curve of sample.
Embodiment 3: use three groups of 20g barium titanates of weighing, add secondary additive according to embodiment 1 prescription, add 0.2g, 1.0g, 2.0g silver powder then respectively, be designated as 3-, 3-2,3-3, batching is mixed through the alcohol ball milling, after the drying, behind the 2MPa forming under the pressure, at 1240 ℃ of sintering, temperature retention time is 2 hours.Its dielectric property of test behind the ceramics sample silver ink firing that is obtained.Table 3 is listed under 1240 ℃ of sintering, the dielectric property parameter of different metal Ag powder addition ceramics sample.Fig. 5 and Fig. 6 are respectively the dielectric temperature characteristic curve and the temperature coefficient of capacitance curve of sample.
Embodiment 4: use the pure barium titanate powder of embodiment 2 preparations, three groups of 20g barium titanates of weighing add secondary additive according to embodiment 1 prescription, add 4.72g, 6.30g, 7.24g silver nitrate (AgNO then respectively 3), being designated as 4-1,4-2,4-3, batching is mixed through the alcohol ball milling, after the drying, heat-treats under 350 ℃, and temperature retention time is 2 hours.Silver nitrate is decomposed into argent simple substance after the preliminary treatment.Then with this powder behind the 2MPa forming under the pressure, at 1250 ℃ of sintering, temperature retention time is 2 hours.Its dielectric property of test behind the ceramics sample silver ink firing that is obtained.Table 4 is listed under 1250 ℃ of sintering, the dielectric property parameter of different silver nitrate addition ceramics samples.Fig. 7 and Fig. 8 are respectively the dielectric temperature characteristic curve and the temperature coefficient of capacitance curve of sample.
Embodiment 5: to the pure barium titanate powder of the embodiment of the invention two preparations, three groups of 20g barium titanates of weighing add secondary additive according to prescription, add 6.39g, 7.16g, 7.67g silver carbonate (Ag then respectively 2CO 3), being designated as 5-1,5-2,5-3, batching is mixed through the alcohol ball milling, after the drying, heat-treats under 300 ℃, and temperature retention time is 2 hours.Silver carbonate is decomposed into argent simple substance after the preliminary treatment.Then with this powder behind the 2MPa forming under the pressure, at 1240 ℃ of sintering, temperature retention time is 2 hours.Its dielectric property of test behind the ceramics sample silver ink firing that is obtained.Table 5 is listed under 1240 ℃ of sintering, the dielectric property parameter of different silver carbonate addition ceramics samples.Fig. 9 and Figure 10 are respectively the dielectric temperature characteristic curve and the temperature coefficient of capacitance curve of sample.
In addition, the insulation resistance of ceramic material and puncture voltage test result see Table 6.
Above-mentioned experimental result explanation by the adjustment of prescription, technology and metal addition, at 1200 ~ 1250 ℃, does not add under the condition of sintering aid, can obtain the barium phthalate base multi-layer ceramic capacitor material of ultra-high dielectric coefficient (up to 42000) temperature-stable.
The room temperature dielectric constant of sample can be controlled between 4000 to 42000, and temperature coefficient of capacitance is less than ± 15%, and dielectric loss is less than 2.5%.Insulation resistivity is 10 12~ 10 13Ω CM, puncture voltage is greater than 5KV/mm.Utilize prescription of the present invention and technology, chemical method preparation technology particularly, it is low to obtain sintering temperature, and performance is adjustable, and sintering range is wide, the multi-layer ceramic capacitor material of the barium phthalate base that stability and reproducibility are good.And the uniform crystal particles of material, particle diameter is less than 1 micron, and mechanical strength is good, the reliability height, anti-breakdown characteristics is strong, can be applied to big capacity multilayer ceramic capacitor, is a kind of ultra-high dielectric coefficient, temperature-stable multilayer ceramic capacitor material with wide application prospect.
Table 1
??SAMPLE ??CONDITION ????E ????TCC(%) ????E ??(25℃) ????E ????T ??CC(%) ????TGδ ????(25 ??℃)(%)
??????????-55℃ ???????????125℃
????1-1 ?1240℃/4h ????2981 ????-13.9 ????3462 ????4213 ????21.7 ????2.76
????1-2 ?1240℃/4h ????4053 ????-2.33 ????4150 ????4601 ????10.9 ????1.31
????1-3 ?1240℃/4h ????4488 ????2.61 ????4374 ????4366 ????-0.18 ????1.50
????1-4 ?1240℃/4h ????4356 ????2.93 ????4232 ????3946 ????-6.75 ????1.55
????1-5 ?1240℃/4h ????4290 ????0.92 ????4251 ????4186 ????-1.53 ????1.38
????1-6 ?1240℃/4h ????4273 ????2.10 ????4185 ????3783 ????-9.60 ????1.32
Table 2
?SAMPLE ?CONDITION ????E ??TCC(%) ????E ??(25℃) ????E ?TCC(%) ????TGΔ (25℃)(%)
?????????-55℃ ???????????125℃
??2-1 ?1200℃/2h ????2557 ????-11.8 ????2901 ????3226 ????11.2 ????6.18
??2-2 ?1220℃/2h ????3147 ????-7.69 ????3409 ????3843 ????12.7 ????1.91
??2-3 ?1240℃/2h ????3677 ????-0.59 ????3799 ????4080 ????7.4 ????1.86
??2-4 ?1250℃/2h ????3908 ????0.51 ????3850 ????4273 ????10.2 ????1.70
??2-5 ?1260℃/2h ????4571 ????2.21 ????4472 ????4306 ????-3.7 ????1.68
??2-6 ?1280℃/2h ????4470 ????-2.57 ????4588 ????4262 ????-7.1 ????1.45
Table 3
?SAMPLE ??CONDITION ????E ????TCC(%) ????E ??(25℃) ????E ??TCC(%) ????TGΔ (25℃)(%)
?????????????-55℃ ?????????????125℃
??3-1 ??1240℃/2h ????4154 ????-5.65 ????4403 ????4649 ??5.58 ????0.84
??3-2 ??1240℃/2h ????4750 ????-7.52 ????5136 ????5222 ??1.67 ????0.869
??3-3 ??1240℃/2h ????5825 ????-10.40 ????6501 ????6286 ??3.30 ????1.21
Table 4
?SAMPLE ??CONDITION ????E ????TCC(%) ????E ??(25℃) ????E ??TCC(%) ????TGΔ (25℃)(%)
??????????????-55℃ ????????????125℃
??4-1 ??1250℃/2h ????7202 ??-12.53 ????8234 ??7694 ??-6.56 ????1.48
??4-2 ??1250℃/2h ????10140 ??-14.50 ????11860 ??10760 ??-9.27 ????2.06
??4-3 ??1250℃/2h ????16590 ??-15.62 ????19710 ??17540 ??-11.01 ????1.97
Table 5
?SAMPLE ??CONDITION ????E ??TCC(%) ????E ??(25℃) ????E ??TCC(%) ????TGΔ (25℃)(%)
????????????-55℃ ?????????????125℃
??5-1 ??1240℃/2h ????15630 ??-15.65 ????18530 ??16420 ??-11.38 ????1.91
??5-2 ??1240℃/2h ????29160 ??-15.72 ????34600 ??29730 ??-14.07 ????2.28
??5-3 ??1240℃/2h ????35800 ??-14.25 ????41750 ??35630 ??-14.65 ????2.21
Table 6
?Sample ??Sintering?Condition ????ρ ??(×10 12Ω·cm) ????Breaking?Down?Voltage ????(Kv/mm)
??1-3 ????1240℃-4h ????14.5 ????11.6
??1-4 ????1240℃-4h ????20.3 ????11.0
??4-2 ????1240℃-2h ????12.7 ????5.8

Claims (7)

1.一种超高介电常数、温度稳定型多层陶瓷电容器材料,主要由钛酸钡、金属粉末及二次添加剂组成,其特征在于:所述多层电容器材料是以钛酸钡为主料,加入用于提高介电性能的金属粉,以及用于改善温度性能的二次添加剂,以摩尔比的配方为:1. A super high dielectric constant, temperature stable multilayer ceramic capacitor material, mainly composed of barium titanate, metal powder and secondary additives, characterized in that: said multilayer capacitor material is based on barium titanate Material, adding metal powder for improving dielectric properties, and secondary additives for improving temperature performance, the formula in molar ratio is: x([100-(a+b+c)]BaTiO3+a Nb2O5+b Co3O4+c Re2O3+d MnO2)+(1-x)Me,其中0.5≤x≤1.0,0.1≤a≤3.0,0.1≤b≤1.5,0.1≤c≤1.2,1.0≤a/b≤5.0,Me代表金属银(Ag)、钯(Pd)、银钯合金(Ag-Pd),Re代表钇(Y)、镧(La)、铈(Ce)、镨(Pr)、钕(Nd)、钐(Sm)、镝(Dy)、铒(Er)和镱(Yb),其中氧化锰(MnO2)适量加入或不加均可。x([100-(a+b+c)]BaTiO 3 +a Nb 2 O 5 +b Co 3 O 4 +c Re 2 O 3 +d MnO 2 )+(1-x)Me, where 0.5≤x ≤1.0, 0.1≤a≤3.0, 0.1≤b≤1.5, 0.1≤c≤1.2, 1.0≤a/b≤5.0, Me stands for metal silver (Ag), palladium (Pd), silver-palladium alloy (Ag-Pd) , Re represents yttrium (Y), lanthanum (La), cerium (Ce), praseodymium (Pr), neodymium (Nd), samarium (Sm), dysprosium (Dy), erbium (Er) and ytterbium (Yb), where the oxide Manganese (MnO 2 ) can be added or not added in an appropriate amount. 2.根据权利要求1所述超高介电常数、温度稳定型多层陶瓷电容器材料,其特征在于:所述主料BaTiO3所占的摩尔数为50-99%;所述金属粉末所占的摩尔数为0-49%,其包括银、钯、银钯合金的1-3种;二次添加剂的用量占材料总量的0.5-4mol%,其二次添加剂包括氧化铌(Nb2O5)、三氧化二钴(Co2O3)、或四氧化三钴(Co3O4)及稀土氧化物氧化钇(Y2O3)、氧化铈(CeO2)、氧化镨(Pr2O3)、氧化钕(Nd2O3)、氧化钐(Sm2O3)、氧化镝(Dy2O3)、氧化镱(Yb2O3)中的1-3种。2. according to the described ultra-high dielectric constant of claim 1, temperature stable multilayer ceramic capacitor material, it is characterized in that: the molar number that the main material BaTiO occupies is 50-99%; The molar number is 0-49%, which includes 1-3 kinds of silver, palladium, silver-palladium alloy; the amount of secondary additives accounts for 0.5-4mol% of the total material, and its secondary additives include niobium oxide (Nb 2 O 5 ), cobalt trioxide (Co 2 O 3 ), or tricobalt tetroxide (Co 3 O 4 ) and rare earth oxides yttrium oxide (Y 2 O 3 ), cerium oxide (CeO 2 ), praseodymium oxide (Pr 2 O 3 ) 1-3 of , neodymium oxide (Nd 2 O 3 ), samarium oxide (Sm 2 O 3 ), dysprosium oxide (Dy 2 O 3 ), and ytterbium oxide (Yb 2 O 3 ). 3.一种制备权利要求1所述超高介电常数、温度稳定型多层陶瓷电容器材料的制备方法,其特征在于:所述多层陶瓷电容器材料的制备方法是,先制备主料BaTiO3,再按配方x([100-(a+b+c)]BaTiO3+a Nb2O5+b Co3O4+c Re2O3+d MnO2)+(1-x)Me配比混合后球磨、干燥、成型烧结而成,其制备工艺步骤如下:3. a preparation method for preparing the described ultra-high dielectric constant and temperature-stable multilayer ceramic capacitor material of claim 1, is characterized in that: the preparation method of the multilayer ceramic capacitor material is to prepare major ingredient BaTiO3 , according to formula x([100-(a+b+c)]BaTiO 3 +a Nb 2 O 5 +b Co 3 O 4 +c Re 2 O 3 +d MnO 2 )+(1-x)Me It is made by ball milling, drying, molding and sintering after mixing. The preparation process steps are as follows: 1).固相法合成BaTiO3,将初始原料TiO2,和BaCO3按化学计量比称量,以水为介质混合球磨24小时,达到其粒度小于1μm,后在70~120℃温度下,烘6小时,再在1200℃温度下、6小时内固相反应合成BaTiO31). BaTiO 3 was synthesized by solid-phase method. The initial raw material TiO 2 and BaCO 3 were weighed according to the stoichiometric ratio, mixed with water and ball-milled for 24 hours to achieve a particle size of less than 1 μm, and then at a temperature of 70-120°C, Bake for 6 hours, then synthesize BaTiO 3 by solid state reaction at 1200°C within 6 hours; 2).按配方比例加入金属粉末、二次添加剂混合,以水为介质球磨24-72小时;2). Add metal powder and secondary additives according to the formula ratio, and use water as the medium for ball milling for 24-72 hours; 3).在70~120℃温度下,干燥6小时成型;3). Dry for 6 hours at a temperature of 70-120°C; 4).烧结在1150~1300℃温度范围内,烧结30~240分钟,自然冷却后即得多层陶瓷电容器材料。4). Sintering in the temperature range of 1150-1300°C, sintering for 30-240 minutes, and cooling naturally to obtain a multilayer ceramic capacitor material. 4.一种制备权利要求1所述超高介电常数、温度稳定型多层陶瓷电容器材料的制备方法,其特征在于:所述钛酸钡BaTiO3是采用钛酸四丁酯(Ti(OC4H9)4)、硝酸钡(Ba(NO3)2)、醋酸钡(Ba(CH3COO)2)以化学方法合成的;其合成工艺为:将三种原料按化学计量比配成溶液,使溶液中Ti或Ba离子浓度在0.1~5M之间;加入沉淀剂草酸进行共沉淀,形成草酸氧钛钡白色沉淀物,沉淀反应温度10~80℃,反应时间为2~4小时;将沉淀物先用去离子水洗涤数次后,再用乙醇洗数次,在70~120℃下经10~24小时烘干;并在700~1100℃下煅烧,保温0.5~2小时后,即获得超细粉体的材料BaTiO3;然后将二次添加剂、金属粉末按配方与其均匀混合,以水为介质球磨24~72小时;在70~120℃下经10~24小时干燥后,加压成型,烧结成为多层陶瓷电容器材料。4. a kind of preparation method of ultra-high dielectric constant described in claim 1, temperature-stable multilayer ceramic capacitor material is characterized in that: described barium titanate BaTiO 3 adopts tetrabutyl titanate (Ti(OC 4 H 9 ) 4 ), barium nitrate (Ba(NO 3 ) 2 ), and barium acetate (Ba(CH 3 COO) 2 ) are chemically synthesized; solution, so that the concentration of Ti or Ba ions in the solution is between 0.1 and 5M; add precipitant oxalic acid for co-precipitation to form a white precipitate of barium titanyl oxalate, the precipitation reaction temperature is 10-80°C, and the reaction time is 2-4 hours; Wash the precipitate several times with deionized water, then wash it several times with ethanol, dry it at 70-120°C for 10-24 hours; calcinate at 700-1100°C, keep it warm for 0.5-2 hours That is to obtain the superfine powder material BaTiO 3 ; then mix the secondary additives and metal powder uniformly according to the formula, and ball mill with water for 24-72 hours; after drying at 70-120°C for 10-24 hours, add Compression molding, sintering into a multilayer ceramic capacitor material. 5.一种制备权利要求1所述超高介电常数、温度稳定型多层陶瓷电容器材料的制备方法,其特征在于:所述BaTiO3主料直接与金属粉末、二次添加剂混合均匀,以无水乙醇为介质球磨24-72小时后,在50~70℃下,经10~24小时干燥后,加压成型、烧结成为多层陶瓷电容器材料。5. a preparation method for preparing the described ultra-high dielectric constant of claim 1, temperature-stable multilayer ceramic capacitor material, is characterized in that: described BaTiO main material directly mixes with metal powder, secondary additive, with After ball milling with absolute ethanol as the medium for 24-72 hours, drying at 50-70° C. for 10-24 hours, press molding and sintering to form a multilayer ceramic capacitor material. 6.一种制备权利要求1所述超高介电常数、温度稳定型多层陶瓷电容器材料的制备方法,其特征在于:所述BaTiO3主料与金属氧化物或其它易分解的金属盐、二次添加剂混合均匀,以无水乙醇为介质球磨24~72小时,在50~70℃下,经10~24小时干燥,并在300~500℃下,预烧该种粉体,使其中的金属氧化物或金属盐分解出金属粉末,然后加压成型、烧结成为多层陶瓷电容器材料。6. a kind of preparation method of ultra-high dielectric constant described in claim 1, temperature-stable multilayer ceramic capacitor material is characterized in that: described BaTiO Main material and metal oxide or other easily decomposable metal salts, The secondary additives are mixed evenly, ball milled with absolute ethanol for 24-72 hours, dried at 50-70°C for 10-24 hours, and pre-calcined at 300-500°C to make the powder Metal oxides or metal salts are decomposed into metal powders, which are then press-molded and sintered into multilayer ceramic capacitor materials. 7.根据权利要求6所述超高介电常数、温度稳定型多层陶瓷电容器材料的制备方法,其特征在于:所述金属氧化物或其它易分解的金属盐为氧化银(Ag2O)、碳酸银(Ag2CO3)、硝酸银(AgNO3)。7. according to the preparation method of the described ultra-high dielectric constant of claim 6, temperature-stable multilayer ceramic capacitor material, it is characterized in that: described metal oxide or other easily decomposable metal salts are silver oxide (Ag 2 O) , silver carbonate (Ag 2 CO 3 ), silver nitrate (AgNO 3 ).
CNB021257205A 2002-08-14 2002-08-14 Dielectric constant, temperature stable multilayer ceramic capacitor material and preparation method thereof Expired - Fee Related CN1172321C (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CNB021257205A CN1172321C (en) 2002-08-14 2002-08-14 Dielectric constant, temperature stable multilayer ceramic capacitor material and preparation method thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CNB021257205A CN1172321C (en) 2002-08-14 2002-08-14 Dielectric constant, temperature stable multilayer ceramic capacitor material and preparation method thereof

Publications (2)

Publication Number Publication Date
CN1397957A true CN1397957A (en) 2003-02-19
CN1172321C CN1172321C (en) 2004-10-20

Family

ID=4745647

Family Applications (1)

Application Number Title Priority Date Filing Date
CNB021257205A Expired - Fee Related CN1172321C (en) 2002-08-14 2002-08-14 Dielectric constant, temperature stable multilayer ceramic capacitor material and preparation method thereof

Country Status (1)

Country Link
CN (1) CN1172321C (en)

Cited By (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100378032C (en) * 2005-11-21 2008-04-02 天津大学 Barium titanate-based ceramic capacitor dielectric and preparation method thereof
CN101226827B (en) * 2007-12-28 2010-05-19 天津大学 Ultra-high dielectric constant multilayer ceramic capacitor dielectric and preparation method thereof
CN101763926A (en) * 2010-02-25 2010-06-30 深圳市三宝创业科技有限公司 Positive-temperature coefficient thermosensitive resistor and production method thereof
CN101492293B (en) * 2009-03-09 2011-08-10 陕西科技大学 Barium titanate-based Y5P ceramic dielectric material and preparation method thereof
CN102242400A (en) * 2011-06-29 2011-11-16 浙江大学 A kind of method for preparing single crystal CaTiO3 dendrite
CN102320826A (en) * 2011-05-31 2012-01-18 武汉理工大学 Multi-case-layer structure X8R capacitor dielectric ceramic and preparation method thereof
CN102503407A (en) * 2011-09-30 2012-06-20 天津大学 Lead-free X8R-type multilayer ceramic capacitor dielectric and preparation method thereof
CN102718501A (en) * 2012-06-19 2012-10-10 河北大学 Preparation method of temperature stability type capacitor ceramic powder with high dielectric constant
CN101503293B (en) * 2009-03-06 2012-12-05 湖北大学 Barium strontium titanate doped high dielectric property ferroelectric ceramic material and preparation thereof
CN103979953A (en) * 2014-04-10 2014-08-13 湖南中科特种陶瓷技术开发有限公司 Novel rare earth modified microwave dielectric ceramic and preparation method thereof
CN107759215A (en) * 2017-11-01 2018-03-06 苏州大学 The method for preparing huge dielectric constant low-loss ceramic capacitor
CN113582681A (en) * 2021-08-26 2021-11-02 四川特锐祥科技股份有限公司 High-dielectric-constant high-dielectric-strength dielectric material and preparation method thereof
CN113831123A (en) * 2021-09-07 2021-12-24 成都宏科电子科技有限公司 Dielectric ceramic material for barium titanate-based chip capacitor and preparation method and application thereof
CN114230335A (en) * 2021-12-22 2022-03-25 福建贝思科电子材料股份有限公司 BaTiO with giant dielectric constant, low loss and high resistivity3Fine crystal ceramic and its prepn

Cited By (21)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN100378032C (en) * 2005-11-21 2008-04-02 天津大学 Barium titanate-based ceramic capacitor dielectric and preparation method thereof
CN101226827B (en) * 2007-12-28 2010-05-19 天津大学 Ultra-high dielectric constant multilayer ceramic capacitor dielectric and preparation method thereof
CN101503293B (en) * 2009-03-06 2012-12-05 湖北大学 Barium strontium titanate doped high dielectric property ferroelectric ceramic material and preparation thereof
CN101492293B (en) * 2009-03-09 2011-08-10 陕西科技大学 Barium titanate-based Y5P ceramic dielectric material and preparation method thereof
CN101763926A (en) * 2010-02-25 2010-06-30 深圳市三宝创业科技有限公司 Positive-temperature coefficient thermosensitive resistor and production method thereof
CN101763926B (en) * 2010-02-25 2012-03-21 深圳市三宝创业科技有限公司 Positive-temperature coefficient thermosensitive resistor and production method thereof
CN102320826B (en) * 2011-05-31 2013-07-17 武汉理工大学 Multi-case-layer structure X8R capacitor dielectric ceramic and preparation method thereof
CN102320826A (en) * 2011-05-31 2012-01-18 武汉理工大学 Multi-case-layer structure X8R capacitor dielectric ceramic and preparation method thereof
CN102242400B (en) * 2011-06-29 2013-06-05 浙江大学 A kind of method for preparing single crystal CaTiO3 dendrite
CN102242400A (en) * 2011-06-29 2011-11-16 浙江大学 A kind of method for preparing single crystal CaTiO3 dendrite
CN102503407A (en) * 2011-09-30 2012-06-20 天津大学 Lead-free X8R-type multilayer ceramic capacitor dielectric and preparation method thereof
CN102718501A (en) * 2012-06-19 2012-10-10 河北大学 Preparation method of temperature stability type capacitor ceramic powder with high dielectric constant
CN102718501B (en) * 2012-06-19 2013-07-31 河北大学 Preparation method of temperature stability type capacitor ceramic powder with high dielectric constant
CN103979953A (en) * 2014-04-10 2014-08-13 湖南中科特种陶瓷技术开发有限公司 Novel rare earth modified microwave dielectric ceramic and preparation method thereof
CN107759215A (en) * 2017-11-01 2018-03-06 苏州大学 The method for preparing huge dielectric constant low-loss ceramic capacitor
CN113582681A (en) * 2021-08-26 2021-11-02 四川特锐祥科技股份有限公司 High-dielectric-constant high-dielectric-strength dielectric material and preparation method thereof
CN113582681B (en) * 2021-08-26 2022-11-29 四川特锐祥科技股份有限公司 High-dielectric-constant high-dielectric-strength dielectric material and preparation method thereof
CN113831123A (en) * 2021-09-07 2021-12-24 成都宏科电子科技有限公司 Dielectric ceramic material for barium titanate-based chip capacitor and preparation method and application thereof
CN113831123B (en) * 2021-09-07 2022-08-12 成都宏科电子科技有限公司 Dielectric ceramic material for barium titanate-based chip capacitor and preparation method and application thereof
CN114230335A (en) * 2021-12-22 2022-03-25 福建贝思科电子材料股份有限公司 BaTiO with giant dielectric constant, low loss and high resistivity3Fine crystal ceramic and its prepn
CN114230335B (en) * 2021-12-22 2022-12-13 福建贝思科电子材料股份有限公司 BaTiO with giant dielectric constant, low loss and high resistivity 3 Fine crystal ceramic and its prepn

Also Published As

Publication number Publication date
CN1172321C (en) 2004-10-20

Similar Documents

Publication Publication Date Title
US9266781B2 (en) Nano complex oxide doped dielectric ceramic material, preparation method thereof and multilayer ceramic capacitors made from the same
CN101193836B (en) Dielectric ceramic and multilayer ceramic capacitor
CN111763082B (en) A kind of barium strontium titanate based dielectric ceramic material and its preparation method and application
CN1085636C (en) Dielectric ceramic composition and monolithic ceramic capacitor using same
CN1100330C (en) Monolithic ceramic capacitor
CN1404080A (en) Dielectric material for thermostable laminated ceramic capacitor with basic-metal inner electrode
CN1397957A (en) Multi-layer ceramic capacitor material with ultrahigh dielectric constant and temp stability and its preparing process
CN101033132A (en) Middle-temperature sintering high temperature stabilization type ceramic capacitor dielectric material
CN101570434A (en) X8R type base metal inner electrode multilayer ceramic capacitor dielectric material and preparation method thereof
CN103408302B (en) High permittivity and high temperature stability ceramic capacitor medium and its preparation method
CN101172853A (en) A kind of ceramic material for temperature-stabilized X9R type multilayer ceramic capacitor and its preparation method
CN1854105A (en) Nanometer ceramic-material doping agent, ceramic capacitor media material and production thereof
CN1461023A (en) Ultrathin temperature stable type multilayer ceramic capacitor dielectric material and its sintering process
JP2003160378A (en) Dielectric ceramic composition and electronic part
CN1801417A (en) Thin crystal base metal internal electrode multilayer ceramic sheet type capacitor medium material
CN1067361C (en) Composition of temp.-stabilized type high dielectric multi-layer ceramic capacitor material and preparation process thereof
CN102503407B (en) Lead-free X8R type multilayer ceramic capacitor dielectric and preparation method thereof
CN114591079B (en) High-voltage low-loss ceramic capacitor medium and preparation method thereof
CN102627456B (en) Low-loss high-voltage ceramic capacitor dielectric
CN1873862A (en) Doping agent for dielectric material of ceramic capacitor, dielectric material, and preparation method
CN1258783C (en) High-dielectric constant and reduction resistant dielectric material for capacitor with basic-metal electrode
JP4954135B2 (en) Dielectric ceramic composition, manufacturing method thereof, and dielectric ceramic capacitor
CN101538160B (en) Temperature-stable tantalate dielectric ceramic and preparation method thereof
CN111960817A (en) Ceramic dielectric material for high-dielectric low-loss high-voltage-resistant capacitor and preparation method thereof
KR100875288B1 (en) Dielectric composition for MLC with excellent Y5V properties and manufacturing method thereof

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
C14 Grant of patent or utility model
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20041020

Termination date: 20170814