CN106712503A - Quasi-switch boost DC-DC converter employing switching inductor and switching capacitor - Google Patents
Quasi-switch boost DC-DC converter employing switching inductor and switching capacitor Download PDFInfo
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- CN106712503A CN106712503A CN201710075473.1A CN201710075473A CN106712503A CN 106712503 A CN106712503 A CN 106712503A CN 201710075473 A CN201710075473 A CN 201710075473A CN 106712503 A CN106712503 A CN 106712503A
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/156—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
- H02M3/158—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M3/00—Conversion of dc power input into dc power output
- H02M3/02—Conversion of dc power input into dc power output without intermediate conversion into ac
- H02M3/04—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
- H02M3/10—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
- H02M3/145—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
- H02M3/155—Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
- H02M3/1557—Single ended primary inductor converters [SEPIC]
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Dc-Dc Converters (AREA)
Abstract
The invention provides a quasi-switch boost DC-DC converter employing a switch inductor and a switch capacitor, and the converter comprises an input DC voltage source, a switch inductor unit, a switch boost unit, a switch capacitor unit, a second MOS tube, a sixth diode, a fourth capacitor, and a load resistor. The switch inductor unit consists of a first inductor, a second inductor, a first diode, a second diode, and a third diode. The switch boost unit consists of a first capacitor, a fourth diode, a fifth diode, and a first MOS tube. The switch capacitor unit consists of a second capacitor, a third capacitor, a seventh diode, and an eighth diode. The whole circuit structure is simple, and the current of a power supply is continuous. The input and the output achieve common grounding. The converter combines the characteristic that the switch inductor unit and the switch capacitor unit carry out parallel charging and series discharging, and the characteristic of single-stage boost and buck of a quasi-switch boost network. The converter is enabled to have a higher output voltage gain, and there is no start impact current and an impact current, generated at a moment when the switching tube is connected, in the circuit.
Description
Technical field
The present invention relates to converters technical field, and in particular to a kind of use switched inductors and switching capacity
Quasi- boost switching DC-DC converter.
Background technology
With developing rapidly for modern industrial technology, high-gain DC-DC boost converter is obtained in some industrial circles
Extensive demand and application.For example, it is necessary to by 48V battery tensions in the back-up source of uninterrupted dc source (UPS)
It is increased to 380V even more highs;High intensity discharge headlamp used for electric vehicle etc. needs for 12V voltages to be increased to 100V
Stationary value;In field of new energy generation, solar photovoltaic cell panel (33~43V), fuel cell stack (22~48V) etc. is defeated
Go out voltage all very low, it is necessary to pass through the input voltage after one-level high-gain DC-DC converter is boosted with combining inverter
(380V, 760V) is matched and then generated electricity by way of merging two or more grid systems.For this, research and development can be high-tension high-gain DC- low voltage transition
DC converters become more and more important.In Boost most commonly traditional among these, but work as and require output voltage
When gain is very high, the operative duty cycles of switching tube will be made close to 1, so as to excessive switching loss can be caused, reduce system
Whole efficiency.And the Z sources boost DC-DC converter for proposing in recent years, although realize boosting using Z source networks, but its
Voltage gain still has greatly improved space, in addition it also there are problems that input and output not altogether, switching voltage stress.
The content of the invention
It is an object of the invention to overcome above-mentioned the deficiencies in the prior art, propose a kind of using switched inductors and switching capacity
Quasi- boost switching DC-DC converter.
Input dc power potential source, switched inductors unit, boost switching unit, switching capacity are specifically included in circuit of the present invention
Unit, the second metal-oxide-semiconductor, the 6th diode, the 4th electric capacity and load resistance;Wherein switched inductors unit is by the first inductance, second
Inductance, the first diode, the second diode and the 3rd diode are constituted;Boost switching unit by the first electric capacity, the 4th diode,
5th diode and the first metal-oxide-semiconductor are constituted;Switching capacity unit is by the second electric capacity, the 3rd electric capacity, the 7th diode and the eight or two
Pole pipe is constituted.
The specific connected mode of circuit of the present invention is:One end of the input dc power potential source and one end of the first inductance and
The anode connection of the first diode;The other end of first inductance respectively with the anode of the second diode and the 3rd diode
Anode is connected;The negative electrode of first diode is connected with the negative electrode of the second diode and one end of the second inductance respectively;It is described
Anode of the other end of the second inductance respectively with the negative electrode, the drain electrode of the first metal-oxide-semiconductor and the 4th diode of the 3rd diode is connected;
Positive pole, the negative pole of the second electric capacity, the drain electrode of the second metal-oxide-semiconductor and the 6th respectively with the first electric capacity of the negative electrode of the 4th diode
The anode connection of diode;The negative pole of first electric capacity connects with the source electrode of the first metal-oxide-semiconductor and the anode of the 5th diode respectively
Connect;The negative electrode of the 6th diode respectively with the positive pole of the anode, the negative pole of the 3rd electric capacity and the 4th electric capacity of the 7th diode
Connection;The negative electrode of the 7th diode is connected with the anode of the 8th diode and the positive pole of the second electric capacity respectively;Described 8th
The negative electrode of diode is connected with the positive pole of the 3rd electric capacity and one end of load resistance respectively;The other end difference of the load resistance
The negative pole of negative pole, the source electrode of the second metal-oxide-semiconductor, the negative electrode of the 5th diode and direct-current input power supplying with the 4th electric capacity is connected.
The converter stable state export when voltage gain G be:
Wherein VoRepresent the output voltage of converter load-side, ViIt is input dc power potential source
Input voltage, D is dutycycle.
Compared with prior art the invention has the advantages that:Simple structure, it is easy to control;And compared to traditional quasi- Z
Source converter (its output voltage gain is G=1/ (1-2D)) and switched inductors Z sources booster converter (its corresponding output voltage
Gain is G=(1+D)/(1-3D)), in the case of identical input voltage and dutycycle, increase with output voltage higher
Benefit is G=2 (1+D)/(1-3D), and source current is continuous, between input and output altogether, in the absence of circuit start dash current
Deng, thus circuit of the present invention have be widely applied very much prospect.
Brief description of the drawings
Fig. 1 is the quasi- boost switching DC-DC changes of a kind of use switched inductors and switching capacity described in present example
The circuit diagram of parallel operation;
Fig. 2 a, Fig. 2 b be circuit shown in Fig. 1 simultaneously turn in the first metal-oxide-semiconductor and the second metal-oxide-semiconductor respectively, the first metal-oxide-semiconductor and
When second metal-oxide-semiconductor is simultaneously turned off, the groundwork modal graph in a switch periods.
It is defeated with switched inductors Z source converters and traditional quasi- Z source converters that Fig. 3 a are converters described in present example
Go out voltage gain contrast curve.
Fig. 3 b are with Vin=10V, as a example by dutycycle D=0.2, the emulation of correlated variables in the present example circuit for being given
Result figure.
Specific embodiment
With reference to embodiments and accompanying drawing the present invention is described in further detail explanation, but embodiments of the present invention
Not limited to this.If being that those skilled in the art can join it is noted that having the process or parameter of not special detailed description below
Understand according to prior art or realize.
The Basic Topological of the present embodiment is as shown in Figure 1.In order to easy to verify, it is not specified in the case of circuit knot
Device in structure is accordingly to be regarded as ideal component.A kind of quasi- boost switching DC-DC converter of use switched inductors and switching capacity, its
Including input dc power potential source Vin, switched inductors unit, boost switching unit, switching capacity unit, the second metal-oxide-semiconductor S2, the 6th
Diode D6, the 4th electric capacity C4With load resistance RL;Wherein switched inductors unit is by the first inductance L1, the second inductance L2, the one or two
Pole pipe D1, the second diode D2With the 3rd diode D3Constitute;Boost switching unit is by the first electric capacity C1, the 4th diode D4,
Five diode D5With the first metal-oxide-semiconductor S1Composition;Switching capacity unit is by the second electric capacity C2, the 3rd electric capacity C3, the 7th diode D7With
8th diode D8Constitute.
The first metal-oxide-semiconductor S is set in the present embodiment1With the second metal-oxide-semiconductor S2Drive signal be VGS1、VGS2.First inductance L1Electricity
It is i to flowL1, the second inductance L2Electric current is iL2, the first electric capacity C1Voltage is VC1, the second electric capacity C2Voltage is VC2, the 3rd electric capacity C3Electricity
It is V to pressC3, the 4th electric capacity C4Voltage is VC4.And dutycycle as D is set, the configuration switch cycle is Ts。
As shown in Figure 2 a and 2 b, solid line represents the part for having electric current to flow through in converter in figure, and dotted line represents converter
In there is no the part that electric current flows through.This example is using the quasi- boost switching DC-DC converter of switched inductors and switching capacity one
Individual switch periods (0, Ts) in, mainly there are two operation modes of different phase, it is described as follows respectively:
Operation mode 1 (0<t<DTs):As shown in Figure 2 a, the first metal-oxide-semiconductor S1With the second metal-oxide-semiconductor S2It is simultaneously open-minded, the two or two
Pole pipe D2, the 4th diode D4, the 5th diode D5, the 6th diode D6With the 8th diode D8Reversely cut-off, the first diode
D1, the 3rd diode D3With the 7th diode D7Forward conduction.Then now input dc power potential source VinWith the first electric capacity C1Give together
First inductance L in parallel1With the second inductance L2Charge, the 4th electric capacity C4 passes through diode D7With the second metal-oxide-semiconductor S2To the second electric capacity
C2 charges, while the 3rd electric capacity C3With the 4th electric capacity C4Series connection is together to load resistance RLPower supply.
Under this operation mode, associated electrical parameters relational expression is:
VL1_on=VL2_on=Vin+VC1 (1)
VC2=VC4 (2)
Vo=VC3+VC4 (3)
Wherein, VL1-on, VL2_onRepresent the first metal-oxide-semiconductor S1With the second metal-oxide-semiconductor S2Simultaneously turn on period the first inductance L1With
Two inductance L2The voltage at two ends, VoRepresent the output voltage of converter load-side.
(the DT of operation mode 2s<t<Ts):As shown in Figure 2 b, the first metal-oxide-semiconductor S1With the second metal-oxide-semiconductor S2Simultaneously turn off, then second
Diode D2, the 4th diode D4, the 5th diode D5, the 6th diode D6With the 8th diode D8Conducting, the first diode D1、
3rd diode D3With the 7th diode D7Shut-off.Then now input dc power potential source VinWith the first inductance L1With the second inductance L2
Series connection is together to the first electric capacity C1With the 4th electric capacity C4Charge, the second electric capacity C2To the 3rd electric capacity C3Charge.Meanwhile, input direct-current
Voltage source VinWith the first inductance L1, the second inductance L2With the second electric capacity C2Series connection is together to load resistance RLPower supply.This operation mode
Under, associated electrical parameters relational expression is:
VL1-off+VL2-off=Vin-VC1 (4)
VC1=VC4 (5)
VC2=VC3 (6)
Vo=VC2+VC1 (7)
Wherein, VL1-off, VL2-offRepresent the first metal-oxide-semiconductor S1With the second metal-oxide-semiconductor S2First inductance L when simultaneously turning off1With second
Inductance L2The voltage at two ends.
Analyzed according to more than, to the first inductance L1With the second inductance L2With voltage-second balance principle, i.e. inductive drop at one
Average value in switch periods is zero, and simultaneous formula (1) and (4) can obtain
The expression of capacitance voltage and output voltage when then simultaneous formula (2), (3), (5), (6), (7) and (8) can try to achieve stable state
Formula is respectively:
A kind of use switched inductors and the quasi- boost switching DC-DC converter of switching capacity then described in present example are steady
State export when voltage gain G be:
It is as shown in Figure 3 a the output voltage gain curve and switched inductors Z source converters and tradition of present example circuit
The voltage gain curve ratio of quasi- Z source converters is relatively schemed.As seen from the figure, present example circuit is no more than 0.33 in dutycycle D
In the case of, output voltage gain G can just reach very big, hence it is evident that higher than other two kinds of voltage gains of converter, and the present invention
The dutycycle D of example circuit is not over 0.33.
Fig. 3 b are with Vin=10V, the emulation of correlated variables in the present example circuit be given as a example by dutycycle D=0.2
Result figure.During D=0.2, corresponding output voltage gain G=6, first, second, third, fourth capacitance voltage (VC1、VC2、VC3、
VC4)=30V, output voltage Vo=60V.Additionally, giving first, second inductive current (i in Fig. 3 bL1、iL2) waveform with
And the first metal-oxide-semiconductor S1With the second metal-oxide-semiconductor S2Drive signal (VGS、VGS2) waveform.
In sum, present example is proposed a kind of use switched inductors and the quasi- boost switching DC-DC of switching capacity
Converter, simple structure is easy to control;Compared to traditional quasi- Z source converters and switched inductors Z source converters, in identical
In the case of input voltage and dutycycle, with output voltage gain higher, and source current is continuous, between input and output
Altogether, do not exist inrush current, therefore circuit of the present invention with being widely applied very much prospect in circuit start moment.
Above-described embodiment is the present invention preferably implementation method, but embodiments of the present invention are not by the embodiment
Limitation, it is other it is any without departing from Spirit Essence of the invention and the change, modification, replacement made under principle, combine, simplification,
Equivalent substitute mode is should be, is included within protection scope of the present invention.
Claims (3)
1. the quasi- boost switching DC-DC converter of a kind of use switched inductors and switching capacity, it is characterised in that straight including input
Stream voltage source (Vin), switched inductors unit, boost switching unit, switching capacity unit, the second metal-oxide-semiconductor (S2), the 6th diode
(D6), the 4th electric capacity (C4) and load resistance (RL);Wherein switched inductors unit is by the first inductance (L1), the second inductance (L2),
One diode (D1), the second diode (D2) and the 3rd diode (D3) constitute;Boost switching unit is by the first electric capacity (C1),
Four diode (D4), the 5th diode (D5) and the first metal-oxide-semiconductor (S1) composition;Switching capacity unit is by the second electric capacity (C2), the 3rd
Electric capacity (C3), the 7th diode (D7) and the 8th diode (D8) constitute;Input dc power potential source (the Vin) one end and first
Inductance (L1) one end and the first diode (D1) anode connection;First inductance (the L1) the other end respectively with the two or two
Pole pipe (D2) anode and the 3rd diode (D3) anode connection;First diode (the D1) negative electrode respectively with the two or two
Pole pipe (D2) negative electrode and the second inductance (L2) one end connection;Second inductance (the L2) the other end respectively with the three or two pole
Pipe (D3) negative electrode, the first metal-oxide-semiconductor (S1) drain electrode and the 4th diode (D4) anode connection;4th diode (the D4)
Negative electrode respectively with the first electric capacity (C1) positive pole, the second electric capacity (C2) negative pole, the second metal-oxide-semiconductor (S2) drain electrode and the six or two
Pole pipe (D6) anode connection;First electric capacity (the C1) negative pole respectively with the first metal-oxide-semiconductor (S1) source electrode and the 5th diode
(D5) anode connection;6th diode (the D6) negative electrode respectively with the 7th diode (D7) anode, the 3rd electric capacity (C3)
Negative pole and the 4th electric capacity (C4) positive pole connection;7th diode (the D7) negative electrode respectively with the 8th diode (D8)
Anode and the second electric capacity (C2) positive pole connection;8th diode (the D8) negative electrode respectively with the 3rd electric capacity (C3) positive pole
With load resistance (RL) one end connection;Load resistance (the RL) the other end respectively with the 4th electric capacity (C4) negative pole, second
Metal-oxide-semiconductor (S2) source electrode, the 5th diode (D5) negative electrode and direct-current input power supplying (Vin) negative pole connection.
2. the quasi- boost switching DC-DC converter of a kind of use switched inductors according to claim 1 and switching capacity, its
It is characterised by when the first metal-oxide-semiconductor and the second metal-oxide-semiconductor are while open-minded, the second diode, the 4th diode, the 5th diode, the 6th
Diode and the 8th diode reverse are ended, the conducting of the first diode, the 3rd diode and the 7th diode forward.It is then now defeated
Enter direct voltage source and the first electric capacity together in parallel the first inductance and the second induction charging, the 4th electric capacity by diode and
Second metal-oxide-semiconductor charges to the second electric capacity, while the 3rd electric capacity and the 4th capacitances in series are powered to load resistance together;When first
Metal-oxide-semiconductor and the second metal-oxide-semiconductor are simultaneously turned off, then the second diode, the 4th diode, the 5th diode, the 6th diode and the 8th
Diode current flow, the shut-off of the first diode, the 3rd diode and the 7th diode.Then now input dc power potential source and first electricity
Sense and the series connection of the second inductance are charged to the first electric capacity and the 4th electric capacity together, and the second electric capacity charges to the 3rd electric capacity.Meanwhile, input
Direct voltage source is powered together with the first inductance, the second inductance and the second capacitances in series to load resistance.
3. the quasi- boost switching DC-DC converter of a kind of use switched inductors according to claim 1 and switching capacity, its
Be characterised by stable state export when voltage gain G be:
Wherein VoRepresent the output voltage of converter load-side, ViIt is the input of input dc power potential source
Voltage, D is dutycycle.
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Cited By (12)
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CN108155785A (en) * | 2018-01-04 | 2018-06-12 | 东南大学 | A kind of high booster converter of double dissymmetrical structures suitable for photovoltaic generating system |
CN108258903A (en) * | 2018-01-04 | 2018-07-06 | 东南大学 | Transless high-gain DC-DC converter |
CN112054707A (en) * | 2020-08-12 | 2020-12-08 | 中国科学院电工研究所 | Micro inverter applied to high-voltage thin-film photovoltaic module based on switch inductor |
CN113179015A (en) * | 2021-05-12 | 2021-07-27 | 西安石油大学 | High-gain DC-DC converter based on Z boost structure |
CN113258772A (en) * | 2021-05-11 | 2021-08-13 | 西安科技大学 | Secondary buck-boost converter adopting switch inductor |
CN113951851A (en) * | 2021-11-25 | 2022-01-21 | 北京福乐云数据科技有限公司 | Photoelectric wave health multi-parameter detector and control method |
US11316430B2 (en) | 2020-03-30 | 2022-04-26 | Qatar University | DC to DC switched inductor boost converter |
CN114583928A (en) * | 2022-05-06 | 2022-06-03 | 成都复锦功率半导体技术发展有限公司 | Power supply boosting drive circuit based on self-oscillation |
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CN116111844A (en) * | 2023-04-13 | 2023-05-12 | 深圳市恒运昌真空技术有限公司 | Dual-switch converter and control method thereof |
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CN116169882A (en) * | 2023-04-26 | 2023-05-26 | 深圳市恒运昌真空技术有限公司 | High-gain boost converter |
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Cited By (15)
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CN108258903A (en) * | 2018-01-04 | 2018-07-06 | 东南大学 | Transless high-gain DC-DC converter |
CN108155785A (en) * | 2018-01-04 | 2018-06-12 | 东南大学 | A kind of high booster converter of double dissymmetrical structures suitable for photovoltaic generating system |
US11316430B2 (en) | 2020-03-30 | 2022-04-26 | Qatar University | DC to DC switched inductor boost converter |
CN112054707A (en) * | 2020-08-12 | 2020-12-08 | 中国科学院电工研究所 | Micro inverter applied to high-voltage thin-film photovoltaic module based on switch inductor |
TWI778564B (en) * | 2021-03-31 | 2022-09-21 | 新唐科技股份有限公司 | Power converter |
US11876443B2 (en) | 2021-03-31 | 2024-01-16 | Nuvoton Technology Corporation | Hybrid switched-capacitor converter |
CN113258772A (en) * | 2021-05-11 | 2021-08-13 | 西安科技大学 | Secondary buck-boost converter adopting switch inductor |
CN113179015A (en) * | 2021-05-12 | 2021-07-27 | 西安石油大学 | High-gain DC-DC converter based on Z boost structure |
CN113951851A (en) * | 2021-11-25 | 2022-01-21 | 北京福乐云数据科技有限公司 | Photoelectric wave health multi-parameter detector and control method |
CN114583928A (en) * | 2022-05-06 | 2022-06-03 | 成都复锦功率半导体技术发展有限公司 | Power supply boosting drive circuit based on self-oscillation |
CN114583928B (en) * | 2022-05-06 | 2022-08-05 | 成都复锦功率半导体技术发展有限公司 | Power supply boosting drive circuit based on self-oscillation |
CN116111844A (en) * | 2023-04-13 | 2023-05-12 | 深圳市恒运昌真空技术有限公司 | Dual-switch converter and control method thereof |
CN116155101A (en) * | 2023-04-19 | 2023-05-23 | 深圳市恒运昌真空技术有限公司 | High-gain converter based on coupling inductance |
CN116155101B (en) * | 2023-04-19 | 2023-06-27 | 深圳市恒运昌真空技术有限公司 | High-gain converter based on coupling inductance |
CN116169882A (en) * | 2023-04-26 | 2023-05-26 | 深圳市恒运昌真空技术有限公司 | High-gain boost converter |
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