CN106712503A - Quasi-switch boost DC-DC converter employing switching inductor and switching capacitor - Google Patents

Quasi-switch boost DC-DC converter employing switching inductor and switching capacitor Download PDF

Info

Publication number
CN106712503A
CN106712503A CN201710075473.1A CN201710075473A CN106712503A CN 106712503 A CN106712503 A CN 106712503A CN 201710075473 A CN201710075473 A CN 201710075473A CN 106712503 A CN106712503 A CN 106712503A
Authority
CN
China
Prior art keywords
diode
electric capacity
semiconductor
oxide
metal
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Pending
Application number
CN201710075473.1A
Other languages
Chinese (zh)
Inventor
张波
朱小全
丘东元
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
South China University of Technology SCUT
Original Assignee
South China University of Technology SCUT
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by South China University of Technology SCUT filed Critical South China University of Technology SCUT
Priority to CN201710075473.1A priority Critical patent/CN106712503A/en
Publication of CN106712503A publication Critical patent/CN106712503A/en
Pending legal-status Critical Current

Links

Classifications

    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/02Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/02Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/156Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators
    • H02M3/158Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only with automatic control of output voltage or current, e.g. switching regulators including plural semiconductor devices as final control devices for a single load
    • HELECTRICITY
    • H02GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02MAPPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
    • H02M3/00Conversion of dc power input into dc power output
    • H02M3/02Conversion of dc power input into dc power output without intermediate conversion into ac
    • H02M3/04Conversion of dc power input into dc power output without intermediate conversion into ac by static converters
    • H02M3/10Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode
    • H02M3/145Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal
    • H02M3/155Conversion of dc power input into dc power output without intermediate conversion into ac by static converters using discharge tubes with control electrode or semiconductor devices with control electrode using devices of a triode or transistor type requiring continuous application of a control signal using semiconductor devices only
    • H02M3/1557Single ended primary inductor converters [SEPIC]

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Dc-Dc Converters (AREA)

Abstract

The invention provides a quasi-switch boost DC-DC converter employing a switch inductor and a switch capacitor, and the converter comprises an input DC voltage source, a switch inductor unit, a switch boost unit, a switch capacitor unit, a second MOS tube, a sixth diode, a fourth capacitor, and a load resistor. The switch inductor unit consists of a first inductor, a second inductor, a first diode, a second diode, and a third diode. The switch boost unit consists of a first capacitor, a fourth diode, a fifth diode, and a first MOS tube. The switch capacitor unit consists of a second capacitor, a third capacitor, a seventh diode, and an eighth diode. The whole circuit structure is simple, and the current of a power supply is continuous. The input and the output achieve common grounding. The converter combines the characteristic that the switch inductor unit and the switch capacitor unit carry out parallel charging and series discharging, and the characteristic of single-stage boost and buck of a quasi-switch boost network. The converter is enabled to have a higher output voltage gain, and there is no start impact current and an impact current, generated at a moment when the switching tube is connected, in the circuit.

Description

A kind of quasi- boost switching DC-DC converter of use switched inductors and switching capacity
Technical field
The present invention relates to converters technical field, and in particular to a kind of use switched inductors and switching capacity Quasi- boost switching DC-DC converter.
Background technology
With developing rapidly for modern industrial technology, high-gain DC-DC boost converter is obtained in some industrial circles Extensive demand and application.For example, it is necessary to by 48V battery tensions in the back-up source of uninterrupted dc source (UPS) It is increased to 380V even more highs;High intensity discharge headlamp used for electric vehicle etc. needs for 12V voltages to be increased to 100V Stationary value;In field of new energy generation, solar photovoltaic cell panel (33~43V), fuel cell stack (22~48V) etc. is defeated Go out voltage all very low, it is necessary to pass through the input voltage after one-level high-gain DC-DC converter is boosted with combining inverter (380V, 760V) is matched and then generated electricity by way of merging two or more grid systems.For this, research and development can be high-tension high-gain DC- low voltage transition DC converters become more and more important.In Boost most commonly traditional among these, but work as and require output voltage When gain is very high, the operative duty cycles of switching tube will be made close to 1, so as to excessive switching loss can be caused, reduce system Whole efficiency.And the Z sources boost DC-DC converter for proposing in recent years, although realize boosting using Z source networks, but its Voltage gain still has greatly improved space, in addition it also there are problems that input and output not altogether, switching voltage stress.
The content of the invention
It is an object of the invention to overcome above-mentioned the deficiencies in the prior art, propose a kind of using switched inductors and switching capacity Quasi- boost switching DC-DC converter.
Input dc power potential source, switched inductors unit, boost switching unit, switching capacity are specifically included in circuit of the present invention Unit, the second metal-oxide-semiconductor, the 6th diode, the 4th electric capacity and load resistance;Wherein switched inductors unit is by the first inductance, second Inductance, the first diode, the second diode and the 3rd diode are constituted;Boost switching unit by the first electric capacity, the 4th diode, 5th diode and the first metal-oxide-semiconductor are constituted;Switching capacity unit is by the second electric capacity, the 3rd electric capacity, the 7th diode and the eight or two Pole pipe is constituted.
The specific connected mode of circuit of the present invention is:One end of the input dc power potential source and one end of the first inductance and The anode connection of the first diode;The other end of first inductance respectively with the anode of the second diode and the 3rd diode Anode is connected;The negative electrode of first diode is connected with the negative electrode of the second diode and one end of the second inductance respectively;It is described Anode of the other end of the second inductance respectively with the negative electrode, the drain electrode of the first metal-oxide-semiconductor and the 4th diode of the 3rd diode is connected; Positive pole, the negative pole of the second electric capacity, the drain electrode of the second metal-oxide-semiconductor and the 6th respectively with the first electric capacity of the negative electrode of the 4th diode The anode connection of diode;The negative pole of first electric capacity connects with the source electrode of the first metal-oxide-semiconductor and the anode of the 5th diode respectively Connect;The negative electrode of the 6th diode respectively with the positive pole of the anode, the negative pole of the 3rd electric capacity and the 4th electric capacity of the 7th diode Connection;The negative electrode of the 7th diode is connected with the anode of the 8th diode and the positive pole of the second electric capacity respectively;Described 8th The negative electrode of diode is connected with the positive pole of the 3rd electric capacity and one end of load resistance respectively;The other end difference of the load resistance The negative pole of negative pole, the source electrode of the second metal-oxide-semiconductor, the negative electrode of the 5th diode and direct-current input power supplying with the 4th electric capacity is connected.
The converter stable state export when voltage gain G be:
Wherein VoRepresent the output voltage of converter load-side, ViIt is input dc power potential source Input voltage, D is dutycycle.
Compared with prior art the invention has the advantages that:Simple structure, it is easy to control;And compared to traditional quasi- Z Source converter (its output voltage gain is G=1/ (1-2D)) and switched inductors Z sources booster converter (its corresponding output voltage Gain is G=(1+D)/(1-3D)), in the case of identical input voltage and dutycycle, increase with output voltage higher Benefit is G=2 (1+D)/(1-3D), and source current is continuous, between input and output altogether, in the absence of circuit start dash current Deng, thus circuit of the present invention have be widely applied very much prospect.
Brief description of the drawings
Fig. 1 is the quasi- boost switching DC-DC changes of a kind of use switched inductors and switching capacity described in present example The circuit diagram of parallel operation;
Fig. 2 a, Fig. 2 b be circuit shown in Fig. 1 simultaneously turn in the first metal-oxide-semiconductor and the second metal-oxide-semiconductor respectively, the first metal-oxide-semiconductor and When second metal-oxide-semiconductor is simultaneously turned off, the groundwork modal graph in a switch periods.
It is defeated with switched inductors Z source converters and traditional quasi- Z source converters that Fig. 3 a are converters described in present example Go out voltage gain contrast curve.
Fig. 3 b are with Vin=10V, as a example by dutycycle D=0.2, the emulation of correlated variables in the present example circuit for being given Result figure.
Specific embodiment
With reference to embodiments and accompanying drawing the present invention is described in further detail explanation, but embodiments of the present invention Not limited to this.If being that those skilled in the art can join it is noted that having the process or parameter of not special detailed description below Understand according to prior art or realize.
The Basic Topological of the present embodiment is as shown in Figure 1.In order to easy to verify, it is not specified in the case of circuit knot Device in structure is accordingly to be regarded as ideal component.A kind of quasi- boost switching DC-DC converter of use switched inductors and switching capacity, its Including input dc power potential source Vin, switched inductors unit, boost switching unit, switching capacity unit, the second metal-oxide-semiconductor S2, the 6th Diode D6, the 4th electric capacity C4With load resistance RL;Wherein switched inductors unit is by the first inductance L1, the second inductance L2, the one or two Pole pipe D1, the second diode D2With the 3rd diode D3Constitute;Boost switching unit is by the first electric capacity C1, the 4th diode D4, Five diode D5With the first metal-oxide-semiconductor S1Composition;Switching capacity unit is by the second electric capacity C2, the 3rd electric capacity C3, the 7th diode D7With 8th diode D8Constitute.
The first metal-oxide-semiconductor S is set in the present embodiment1With the second metal-oxide-semiconductor S2Drive signal be VGS1、VGS2.First inductance L1Electricity It is i to flowL1, the second inductance L2Electric current is iL2, the first electric capacity C1Voltage is VC1, the second electric capacity C2Voltage is VC2, the 3rd electric capacity C3Electricity It is V to pressC3, the 4th electric capacity C4Voltage is VC4.And dutycycle as D is set, the configuration switch cycle is Ts
As shown in Figure 2 a and 2 b, solid line represents the part for having electric current to flow through in converter in figure, and dotted line represents converter In there is no the part that electric current flows through.This example is using the quasi- boost switching DC-DC converter of switched inductors and switching capacity one Individual switch periods (0, Ts) in, mainly there are two operation modes of different phase, it is described as follows respectively:
Operation mode 1 (0<t<DTs):As shown in Figure 2 a, the first metal-oxide-semiconductor S1With the second metal-oxide-semiconductor S2It is simultaneously open-minded, the two or two Pole pipe D2, the 4th diode D4, the 5th diode D5, the 6th diode D6With the 8th diode D8Reversely cut-off, the first diode D1, the 3rd diode D3With the 7th diode D7Forward conduction.Then now input dc power potential source VinWith the first electric capacity C1Give together First inductance L in parallel1With the second inductance L2Charge, the 4th electric capacity C4 passes through diode D7With the second metal-oxide-semiconductor S2To the second electric capacity C2 charges, while the 3rd electric capacity C3With the 4th electric capacity C4Series connection is together to load resistance RLPower supply.
Under this operation mode, associated electrical parameters relational expression is:
VL1_on=VL2_on=Vin+VC1 (1)
VC2=VC4 (2)
Vo=VC3+VC4 (3)
Wherein, VL1-on, VL2_onRepresent the first metal-oxide-semiconductor S1With the second metal-oxide-semiconductor S2Simultaneously turn on period the first inductance L1With Two inductance L2The voltage at two ends, VoRepresent the output voltage of converter load-side.
(the DT of operation mode 2s<t<Ts):As shown in Figure 2 b, the first metal-oxide-semiconductor S1With the second metal-oxide-semiconductor S2Simultaneously turn off, then second Diode D2, the 4th diode D4, the 5th diode D5, the 6th diode D6With the 8th diode D8Conducting, the first diode D1、 3rd diode D3With the 7th diode D7Shut-off.Then now input dc power potential source VinWith the first inductance L1With the second inductance L2 Series connection is together to the first electric capacity C1With the 4th electric capacity C4Charge, the second electric capacity C2To the 3rd electric capacity C3Charge.Meanwhile, input direct-current Voltage source VinWith the first inductance L1, the second inductance L2With the second electric capacity C2Series connection is together to load resistance RLPower supply.This operation mode Under, associated electrical parameters relational expression is:
VL1-off+VL2-off=Vin-VC1 (4)
VC1=VC4 (5)
VC2=VC3 (6)
Vo=VC2+VC1 (7)
Wherein, VL1-off, VL2-offRepresent the first metal-oxide-semiconductor S1With the second metal-oxide-semiconductor S2First inductance L when simultaneously turning off1With second Inductance L2The voltage at two ends.
Analyzed according to more than, to the first inductance L1With the second inductance L2With voltage-second balance principle, i.e. inductive drop at one Average value in switch periods is zero, and simultaneous formula (1) and (4) can obtain
The expression of capacitance voltage and output voltage when then simultaneous formula (2), (3), (5), (6), (7) and (8) can try to achieve stable state Formula is respectively:
A kind of use switched inductors and the quasi- boost switching DC-DC converter of switching capacity then described in present example are steady State export when voltage gain G be:
It is as shown in Figure 3 a the output voltage gain curve and switched inductors Z source converters and tradition of present example circuit The voltage gain curve ratio of quasi- Z source converters is relatively schemed.As seen from the figure, present example circuit is no more than 0.33 in dutycycle D In the case of, output voltage gain G can just reach very big, hence it is evident that higher than other two kinds of voltage gains of converter, and the present invention The dutycycle D of example circuit is not over 0.33.
Fig. 3 b are with Vin=10V, the emulation of correlated variables in the present example circuit be given as a example by dutycycle D=0.2 Result figure.During D=0.2, corresponding output voltage gain G=6, first, second, third, fourth capacitance voltage (VC1、VC2、VC3、 VC4)=30V, output voltage Vo=60V.Additionally, giving first, second inductive current (i in Fig. 3 bL1、iL2) waveform with And the first metal-oxide-semiconductor S1With the second metal-oxide-semiconductor S2Drive signal (VGS、VGS2) waveform.
In sum, present example is proposed a kind of use switched inductors and the quasi- boost switching DC-DC of switching capacity Converter, simple structure is easy to control;Compared to traditional quasi- Z source converters and switched inductors Z source converters, in identical In the case of input voltage and dutycycle, with output voltage gain higher, and source current is continuous, between input and output Altogether, do not exist inrush current, therefore circuit of the present invention with being widely applied very much prospect in circuit start moment.
Above-described embodiment is the present invention preferably implementation method, but embodiments of the present invention are not by the embodiment Limitation, it is other it is any without departing from Spirit Essence of the invention and the change, modification, replacement made under principle, combine, simplification, Equivalent substitute mode is should be, is included within protection scope of the present invention.

Claims (3)

1. the quasi- boost switching DC-DC converter of a kind of use switched inductors and switching capacity, it is characterised in that straight including input Stream voltage source (Vin), switched inductors unit, boost switching unit, switching capacity unit, the second metal-oxide-semiconductor (S2), the 6th diode (D6), the 4th electric capacity (C4) and load resistance (RL);Wherein switched inductors unit is by the first inductance (L1), the second inductance (L2), One diode (D1), the second diode (D2) and the 3rd diode (D3) constitute;Boost switching unit is by the first electric capacity (C1), Four diode (D4), the 5th diode (D5) and the first metal-oxide-semiconductor (S1) composition;Switching capacity unit is by the second electric capacity (C2), the 3rd Electric capacity (C3), the 7th diode (D7) and the 8th diode (D8) constitute;Input dc power potential source (the Vin) one end and first Inductance (L1) one end and the first diode (D1) anode connection;First inductance (the L1) the other end respectively with the two or two Pole pipe (D2) anode and the 3rd diode (D3) anode connection;First diode (the D1) negative electrode respectively with the two or two Pole pipe (D2) negative electrode and the second inductance (L2) one end connection;Second inductance (the L2) the other end respectively with the three or two pole Pipe (D3) negative electrode, the first metal-oxide-semiconductor (S1) drain electrode and the 4th diode (D4) anode connection;4th diode (the D4) Negative electrode respectively with the first electric capacity (C1) positive pole, the second electric capacity (C2) negative pole, the second metal-oxide-semiconductor (S2) drain electrode and the six or two Pole pipe (D6) anode connection;First electric capacity (the C1) negative pole respectively with the first metal-oxide-semiconductor (S1) source electrode and the 5th diode (D5) anode connection;6th diode (the D6) negative electrode respectively with the 7th diode (D7) anode, the 3rd electric capacity (C3) Negative pole and the 4th electric capacity (C4) positive pole connection;7th diode (the D7) negative electrode respectively with the 8th diode (D8) Anode and the second electric capacity (C2) positive pole connection;8th diode (the D8) negative electrode respectively with the 3rd electric capacity (C3) positive pole With load resistance (RL) one end connection;Load resistance (the RL) the other end respectively with the 4th electric capacity (C4) negative pole, second Metal-oxide-semiconductor (S2) source electrode, the 5th diode (D5) negative electrode and direct-current input power supplying (Vin) negative pole connection.
2. the quasi- boost switching DC-DC converter of a kind of use switched inductors according to claim 1 and switching capacity, its It is characterised by when the first metal-oxide-semiconductor and the second metal-oxide-semiconductor are while open-minded, the second diode, the 4th diode, the 5th diode, the 6th Diode and the 8th diode reverse are ended, the conducting of the first diode, the 3rd diode and the 7th diode forward.It is then now defeated Enter direct voltage source and the first electric capacity together in parallel the first inductance and the second induction charging, the 4th electric capacity by diode and Second metal-oxide-semiconductor charges to the second electric capacity, while the 3rd electric capacity and the 4th capacitances in series are powered to load resistance together;When first Metal-oxide-semiconductor and the second metal-oxide-semiconductor are simultaneously turned off, then the second diode, the 4th diode, the 5th diode, the 6th diode and the 8th Diode current flow, the shut-off of the first diode, the 3rd diode and the 7th diode.Then now input dc power potential source and first electricity Sense and the series connection of the second inductance are charged to the first electric capacity and the 4th electric capacity together, and the second electric capacity charges to the 3rd electric capacity.Meanwhile, input Direct voltage source is powered together with the first inductance, the second inductance and the second capacitances in series to load resistance.
3. the quasi- boost switching DC-DC converter of a kind of use switched inductors according to claim 1 and switching capacity, its Be characterised by stable state export when voltage gain G be:
Wherein VoRepresent the output voltage of converter load-side, ViIt is the input of input dc power potential source Voltage, D is dutycycle.
CN201710075473.1A 2017-02-13 2017-02-13 Quasi-switch boost DC-DC converter employing switching inductor and switching capacitor Pending CN106712503A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201710075473.1A CN106712503A (en) 2017-02-13 2017-02-13 Quasi-switch boost DC-DC converter employing switching inductor and switching capacitor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201710075473.1A CN106712503A (en) 2017-02-13 2017-02-13 Quasi-switch boost DC-DC converter employing switching inductor and switching capacitor

Publications (1)

Publication Number Publication Date
CN106712503A true CN106712503A (en) 2017-05-24

Family

ID=58911168

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201710075473.1A Pending CN106712503A (en) 2017-02-13 2017-02-13 Quasi-switch boost DC-DC converter employing switching inductor and switching capacitor

Country Status (1)

Country Link
CN (1) CN106712503A (en)

Cited By (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108155785A (en) * 2018-01-04 2018-06-12 东南大学 A kind of high booster converter of double dissymmetrical structures suitable for photovoltaic generating system
CN108258903A (en) * 2018-01-04 2018-07-06 东南大学 Transless high-gain DC-DC converter
CN112054707A (en) * 2020-08-12 2020-12-08 中国科学院电工研究所 Micro inverter applied to high-voltage thin-film photovoltaic module based on switch inductor
CN113179015A (en) * 2021-05-12 2021-07-27 西安石油大学 High-gain DC-DC converter based on Z boost structure
CN113258772A (en) * 2021-05-11 2021-08-13 西安科技大学 Secondary buck-boost converter adopting switch inductor
CN113951851A (en) * 2021-11-25 2022-01-21 北京福乐云数据科技有限公司 Photoelectric wave health multi-parameter detector and control method
US11316430B2 (en) 2020-03-30 2022-04-26 Qatar University DC to DC switched inductor boost converter
CN114583928A (en) * 2022-05-06 2022-06-03 成都复锦功率半导体技术发展有限公司 Power supply boosting drive circuit based on self-oscillation
TWI778564B (en) * 2021-03-31 2022-09-21 新唐科技股份有限公司 Power converter
CN116111844A (en) * 2023-04-13 2023-05-12 深圳市恒运昌真空技术有限公司 Dual-switch converter and control method thereof
CN116155101A (en) * 2023-04-19 2023-05-23 深圳市恒运昌真空技术有限公司 High-gain converter based on coupling inductance
CN116169882A (en) * 2023-04-26 2023-05-26 深圳市恒运昌真空技术有限公司 High-gain boost converter

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN205847124U (en) * 2016-06-30 2016-12-28 华南理工大学 A kind of switched inductors type mixes quasi-Z-source inverter
CN206698111U (en) * 2017-02-13 2017-12-01 华南理工大学 It is a kind of using switched inductors and the quasi- boost switching DC DC converters of switching capacity

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN205847124U (en) * 2016-06-30 2016-12-28 华南理工大学 A kind of switched inductors type mixes quasi-Z-source inverter
CN206698111U (en) * 2017-02-13 2017-12-01 华南理工大学 It is a kind of using switched inductors and the quasi- boost switching DC DC converters of switching capacity

Non-Patent Citations (2)

* Cited by examiner, † Cited by third party
Title
ANDRII CHUB等: "Improved switched-inductor quasi-switched-boost inverter with low input current ripple", 《2015 56TH INTERNATIONAL SCIENTIFIC CONFERENCE ON POWER AND ELECTRICAL ENGINEERING OF RIGA TECHNICAL UNIVERSITY (RTUCON)》 *
王挺: "高增益双管升压变换器研究", 《中国优秀硕士学位论文全文数据库 工程科技Ⅱ辑》 *

Cited By (15)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN108258903A (en) * 2018-01-04 2018-07-06 东南大学 Transless high-gain DC-DC converter
CN108155785A (en) * 2018-01-04 2018-06-12 东南大学 A kind of high booster converter of double dissymmetrical structures suitable for photovoltaic generating system
US11316430B2 (en) 2020-03-30 2022-04-26 Qatar University DC to DC switched inductor boost converter
CN112054707A (en) * 2020-08-12 2020-12-08 中国科学院电工研究所 Micro inverter applied to high-voltage thin-film photovoltaic module based on switch inductor
TWI778564B (en) * 2021-03-31 2022-09-21 新唐科技股份有限公司 Power converter
US11876443B2 (en) 2021-03-31 2024-01-16 Nuvoton Technology Corporation Hybrid switched-capacitor converter
CN113258772A (en) * 2021-05-11 2021-08-13 西安科技大学 Secondary buck-boost converter adopting switch inductor
CN113179015A (en) * 2021-05-12 2021-07-27 西安石油大学 High-gain DC-DC converter based on Z boost structure
CN113951851A (en) * 2021-11-25 2022-01-21 北京福乐云数据科技有限公司 Photoelectric wave health multi-parameter detector and control method
CN114583928A (en) * 2022-05-06 2022-06-03 成都复锦功率半导体技术发展有限公司 Power supply boosting drive circuit based on self-oscillation
CN114583928B (en) * 2022-05-06 2022-08-05 成都复锦功率半导体技术发展有限公司 Power supply boosting drive circuit based on self-oscillation
CN116111844A (en) * 2023-04-13 2023-05-12 深圳市恒运昌真空技术有限公司 Dual-switch converter and control method thereof
CN116155101A (en) * 2023-04-19 2023-05-23 深圳市恒运昌真空技术有限公司 High-gain converter based on coupling inductance
CN116155101B (en) * 2023-04-19 2023-06-27 深圳市恒运昌真空技术有限公司 High-gain converter based on coupling inductance
CN116169882A (en) * 2023-04-26 2023-05-26 深圳市恒运昌真空技术有限公司 High-gain boost converter

Similar Documents

Publication Publication Date Title
CN106712503A (en) Quasi-switch boost DC-DC converter employing switching inductor and switching capacitor
CN206698111U (en) It is a kind of using switched inductors and the quasi- boost switching DC DC converters of switching capacity
CN105939108B (en) A kind of quasi- boost switching DC-DC converter of switched inductors type
CN105939112B (en) A kind of quasi- boost switching DC-DC converter of high-gain
CN105939107B (en) A kind of quasi- boost switching DC-DC converter of mixed type
CN107453603A (en) A kind of dual input Sepic converters
CN107104596A (en) A kind of quasi- boost switching DC/DC converters of the high-gain of low voltage stress
CN106849643A (en) A kind of switching capacity type mixes quasi- Z source converters
CN114583952A (en) Bidirectional direct current converter for energy storage system and control method thereof
CN107104590A (en) A kind of quasi- boost switching DC/DC converters based on switched inductors
CN107634656A (en) A kind of quasi- Z sources DC DC converters of isolated form high-gain suitable for photovoltaic generation
CN205847091U (en) A kind of switched inductors type quasi-boost switching DC DC changer
CN205847090U (en) A kind of mixed type quasi-boost switching DC DC changer
CN107911024B (en) A kind of high efficiency series hybrid multiport DC/DC converter
CN207368879U (en) A kind of quasi- boost switching DC/DC converters of the high-gain of low voltage stress
CN106100392A (en) Eliminate working frequency ripple wave high efficiency high power factor AC/DC power circuit and method of supplying power to thereof and control method
CN106787692A (en) A kind of quasi- Z source converters of type switching capacity altogether
CN106787728A (en) A kind of quasi- boost switching DC DC converters of switching capacity type
CN107612349A (en) The common ground type isolation quasi- Z source converters of high-gain of fuel cell and photovoltaic generation
CN106602872A (en) Cascaded voltage lifting quasi-Z source converter
CN106787900A (en) Boosting combining inverter and its control method
CN105978322A (en) Switch capacitor type high-gain quasi Z source DC-DC converter
CN215934729U (en) Novel wide-input-range three-port converter
CN205847087U (en) A kind of high-gain quasi-boost switching DC DC changer
CN207612198U (en) A kind of quasi- boost switching DC-DC converter of switching capacity type

Legal Events

Date Code Title Description
PB01 Publication
PB01 Publication
SE01 Entry into force of request for substantive examination
RJ01 Rejection of invention patent application after publication

Application publication date: 20170524

RJ01 Rejection of invention patent application after publication