CN106702490B - Sapphire crystal growth equipment - Google Patents
Sapphire crystal growth equipment Download PDFInfo
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- CN106702490B CN106702490B CN201610790572.3A CN201610790572A CN106702490B CN 106702490 B CN106702490 B CN 106702490B CN 201610790572 A CN201610790572 A CN 201610790572A CN 106702490 B CN106702490 B CN 106702490B
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Abstract
Disclosed is a sapphire crystal growth apparatus, including: a furnace body used for providing a growing environment for sapphire crystals, a furnace cover covering the furnace body, a crucible arranged in the furnace body, used for containing melt and used as a reaction vessel, is arranged in the furnace body and positioned above the crucible and comprises a first adjusting plate and a second adjusting plate which are mutually symmetrical, and the first adjusting plate and the second adjusting plate are oppositely arranged and hinged with each other, the first end of the first push-pull rod is hinged with the first adjusting plate, the first end of the second push-pull rod is connected with the first end of the second adjusting plate, the second ends of the first push-pull rod and the second push-pull rod are hinged with each other, hinged shafts of the first push-pull rod and the second push-pull rod are connected with a driving shaft penetrating through the furnace cover and extending into the furnace body, and the deflection angles of the first adjusting plate and the second adjusting plate are adjusted, so that the temperature gradient adjustment of a solid-liquid melting interface in the crucible is realized. The device can realize the refinement of the temperature field control.
Description
Technical Field
The invention relates to the technical field of sapphire crystal culture equipment, in particular to growth equipment of sapphire crystals.
Background
Sapphire is a corundum group mineral, trigonal system. In general, various kinds of sapphire-grade corundum other than ruby are called sapphire. Sapphire has been widely used in the field of industrial manufacturing due to its excellent mechanical properties and optical transmittance.
A kyropoulos method sapphire crystal growth furnace is equipment for preparing sapphire, and a temperature field in the growth furnace needs to be strictly controlled in the crystal growth process. However, the growth furnace in the prior art has extremely poor effect in the aspect of temperature field control, especially in the aspect of radial temperature gradient control, and the requirement for preparing high-quality sapphire crystals is far from being met.
Disclosure of Invention
In view of the above, the present invention aims to provide a sapphire crystal growth apparatus capable of implementing fine adjustment of a temperature field in a furnace body, thereby significantly improving the quality of a sapphire crystal.
According to the invention, the sapphire crystal growth device comprises:
a furnace body for providing a growing environment for sapphire crystals,
the furnace cover is covered on the furnace body,
a crucible arranged in the furnace body and used for containing melt and serving as a reaction container,
the crucible temperature gradient adjusting device is arranged in the furnace body and located above the crucible, and comprises a first adjusting plate, a second adjusting plate, a first push-pull rod and a second push-pull rod, wherein the first adjusting plate and the second adjusting plate are of symmetrical structures, the first push-pull rod and the second push-pull rod are oppositely arranged and hinged with each other, the first end of the first push-pull rod is hinged with the first adjusting plate, the first end of the second push-pull rod is connected with the first end of the second adjusting plate, the second ends of the first push-pull rod and the second push-pull rod are hinged with each other, a hinged shaft of the first push-pull rod and the second push-pull rod is connected with a driving shaft penetrating through the furnace cover and penetrating into the furnace body, and the deflection angles of the first adjusting plate and the second adjusting plate are adjusted under the driving of the driving shaft, so that the temperature gradient adjustment.
Preferably, the surfaces of the first adjusting plate and the second adjusting plate facing the crucible are revolution surfaces, and the included angle between a generatrix of each revolution surface and the revolution shaft is 30-60 degrees.
Preferably, the angle of revolution of the surface of revolution is 160 ° to 180 °.
Preferably, the crucible heating device further comprises a plurality of heating coils, and the plurality of heating coils are respectively arranged around the crucible from top to bottom in sequence.
Preferably, the heating coil further comprises a first electrode and a second electrode, and two ends of each of the heating coils are respectively connected with the first electrode and the second electrode.
Preferably, control switches are respectively arranged between the heating coils and the connecting wires of the first electrodes, and the on-off of the current is controlled through the corresponding control switches.
Preferably, the crucible furnace further comprises a heating plate, wherein the heating plate is arranged in the furnace body and used for supporting and heating the crucible.
Preferably, the hinge shaft between the first regulating plate and the second regulating plate is fixed to the furnace body.
Preferably, the first and second regulating plates are made of a tungsten-molybdenum alloy.
Preferably, be equipped with first radiation layer and first heat preservation from inside to outside in proper order on the inner wall of furnace body, still be equipped with second radiation layer and second heat preservation in proper order on the diapire of furnace body, wherein, the second radiation layer orientation the inside of furnace body.
When the growth equipment for the sapphire crystal provided by the invention is used for culturing the crystal, the temperature gradient of the whole radial solid-liquid interface in the crucible can be finely controlled, and the automation degree is high. A good solid-liquid interface is formed, uniform crystallization is realized, thermal stress in an annealing stage can be reduced, and crystal melting, particularly crystal melting in a diameter-drawing stage, can be prevented.
Drawings
The above and other objects, features and advantages of the present invention will become more apparent from the following description of the embodiments of the present invention with reference to the accompanying drawings.
Fig. 1 is a schematic exploded view of a structure of a sapphire crystal growth apparatus according to an embodiment of the present invention.
Fig. 2 is a front view of a growth apparatus for a sapphire crystal according to an embodiment of the present invention.
Fig. 3 is a schematic perspective view of a temperature field adjusting device according to an embodiment of the invention.
In the figure: the furnace comprises a furnace body 1, a first radiation layer 11, a first heat preservation layer 12, a second radiation layer 13, a second heat preservation layer 14, a furnace cover 2, a crucible 3, a temperature field adjusting device 4, a first adjusting plate 41, a second adjusting plate 42, a first push-pull rod 43, a second push-pull rod 44, a driving shaft 45, a first heating coil 51, a second heating coil 52, a third heating coil 53 and a seed crystal rod 6.
Detailed Description
Various embodiments of the present invention will be described in more detail below with reference to the accompanying drawings. Like elements in the various figures are denoted by the same or similar reference numerals. For purposes of clarity, the various features in the drawings are not necessarily drawn to scale.
As shown in figures 1-3, the sapphire crystal growth furnace of the invention is used for preparing sapphire crystals and comprises a furnace body 1, a furnace cover 2, a crucible 3 and a temperature field adjusting device 4. The furnace body 1 is used for providing a growth environment for sapphire crystals. The furnace cover 2 covers the furnace body 1 to seal the furnace body 1. The crucible 3 is arranged in the furnace body 1 and used for containing melt and serving as a reaction container. In this embodiment, the melt is alumina, and may be in the form of block or powder, or a combination of the two.
The temperature field adjusting device 4 is arranged in the furnace body 1 and positioned above the crucible 3, and comprises a first adjusting plate 41 and a second adjusting plate 42 which are symmetrical to each other, and a first push-pull rod 43 and a second push-pull rod 44, the first adjustment plate 41 and the second adjustment plate 42 being disposed opposite to each other and hinged to each other, a first end of the first push-pull rod 43 is hinged with the first adjusting plate 41, a first end of the second push-pull rod 44 is connected with a first end of the second adjusting plate 42, the second ends of the first push-pull rod 43 and the second push-pull rod 44 are hinged, the hinged shaft of the first push-pull rod 43 and the second push-pull rod 44 is connected with a driving shaft 45 which penetrates through the furnace cover 2 and extends into the furnace body 1, the deflection angles of the first regulating plate 41 and the second regulating plate 42 are regulated by the driving of the driving shaft 45, thereby realizing the temperature gradient regulation of the solid-liquid melting interface in the crucible 3.
Specifically, an articulated shaft can be set up between first regulating plate 41 and the second regulating plate 42, or a plurality of articulated shafts, for example two, and the warp the articulated shaft is fixed in on the furnace body 1, thereby can round the articulated shaft rotates, realizes the deflection of two regulating plates, changes the heat radiation angle, realizes different heat radiation effects.
The surfaces of the first adjusting plate 41 and the second adjusting plate 42 facing the crucible 3 are revolution surfaces, the included angle between the generatrix of the revolution surfaces and the revolution shaft is 30-60 degrees, and the heat radiation effect is better within the range of the included angle. The rotation angle of the rotation surface is 160-180 degrees, so that when the deflection angle between the first adjusting plate 41 and the second adjusting plate 42 is the minimum, the whole crucible 3 is covered as much as possible, the temperature gradient control of the whole radial solid-liquid interface in the crucible 3 is realized, and the thermal field adjusting effect is better. The following fine adjustments may be specifically made: in the neck leading stage, the two adjusting plates are deflected towards two sides by a larger angle, so that the heat radiation is deflected towards two sides to prevent the crystal diameter from melting back; during the melt melting process, the two regulating plates are biased to the position with lower radial temperature gradient of the melting interface for temperature compensation.
In this embodiment, the first regulation plate 41 and the second regulation plate 42 are made of tungsten-molybdenum alloy, but not limited thereto.
Further, the sapphire crystal growth apparatus further includes a plurality of heating coils, and a first electrode and a second electrode (not shown in the figure), and both ends of each of the plurality of heating coils are respectively connected to the first electrode and the second electrode. Preferably, control switches are respectively arranged between the heating coils and the first electrodes, and the on-off of the current is controlled through the corresponding control switches. The heating coils are respectively arranged around the crucible 3 from top to bottom. In this embodiment, the heating coils are electrical heating coils, and the plurality of heating coils includes a first heating coil 51, a second heating coil 52, and a third heating coil 53. Wherein, the bottom of the first heating coil 51 is lower than the upper end surface of the crucible 3 by a certain distance, and the distance can be 50-100 mm; the top of the third heating coil 53 is located at a distance from the lower end surface of the crucible 3, which may be 30-80 mm. First to third control switches (not shown) are respectively provided between the first to third coils and the connecting lead of the first electrode. Therefore, the heating coils can be controlled respectively, and the temperature gradient in the radial direction in the furnace body 1 is adjusted, so that the required thermal field effect is obtained, and the crystallization quality of crystals is improved. The use condition of the heating coil can be determined according to different crystal preparation stages. In the melt melting stage, if the melt has a floating island, only the first heating coil 51 can be turned on to quickly eliminate the floating island; in the diameter-drawing stage, only the first heating coil 51 may be turned on; during the equal diameter growth phase, the second heating coil 52 and the third heating coil 53 may be switched to the single heating mode in sequence.
Further, be equipped with first radiation layer 11 and first heat preservation 12 layer from inside to outside in proper order on the inner wall of furnace body 1, still be equipped with second radiation layer 13 and second heat preservation 14 on the diapire of furnace body 1 in proper order, wherein, second radiation layer 13 is towards the inside of furnace body 1. The radiation layer is made of tungsten-molybdenum alloy and is used for radiating heat towards the interior of the furnace body 1, so that on one hand, heat loss is prevented, and on the other hand, the radiation layer is matched with the temperature field adjusting device 4 to adjust the temperature gradient of the temperature field. The heat preservation layer is made of zirconia, plays a role in heat insulation and prevents heat from dissipating.
The sapphire crystal growth equipment further comprises a seed crystal rod 6, and the seed crystal rod 6 penetrates through the furnace cover 2 and extends into the furnace body 1.
When using the growth equipment of sapphire crystal in this application to cultivate the crystal, at the crystal preparation stage of difference, the control system of growth furnace sends control command according to the information of gathering, and the drive of control actuating lever first regulating plate 41 and second regulating plate 42 of temperature field adjusting device 4 deflect certain angle towards both sides simultaneously, perhaps shrink both angles, realize the meticulous control to whole radial solid-liquid interface's in crucible 3 temperature gradient, degree of automation is high. A good solid-liquid interface is formed, uniform crystallization is realized, thermal stress in an annealing stage can be reduced, and crystal melting, particularly crystal melting in a diameter-drawing stage, can be prevented.
The quality of the sapphire crystal prepared by the growth furnace is greatly improved, and particularly, the yield of the prepared sapphire crystal can be improved by 30-50% when the crystal with high quality requirement is prepared, so that the growth furnace is particularly suitable for preparing the sapphire crystal with high quality requirement.
It is noted that, herein, relational terms such as first and second, and the like may be used solely to distinguish one entity or action from another entity or action without necessarily requiring or implying any actual such relationship or order between such entities or actions. Also, the terms "comprises," "comprising," or any other variation thereof, are intended to cover a non-exclusive inclusion, such that a process, method, article, or apparatus that comprises a list of elements does not include only those elements but may include other elements not expressly listed or inherent to such process, method, article, or apparatus. Without further limitation, an element defined by the phrase "comprising an … …" does not exclude the presence of other identical elements in a process, method, article, or apparatus that comprises the element.
Finally, it should be noted that: it should be understood that the above examples are only for clearly illustrating the present invention and are not intended to limit the embodiments. Other variations and modifications will be apparent to persons skilled in the art in light of the above description. And are neither required nor exhaustive of all embodiments. And obvious variations or modifications of the invention may be made without departing from the scope of the invention.
Claims (6)
1. An apparatus for growing a sapphire crystal, comprising:
a furnace body for providing a growing environment for sapphire crystals,
the furnace cover is covered on the furnace body,
a crucible arranged in the furnace body and used for containing melt and serving as a reaction container,
the crucible furnace comprises a furnace body, a crucible, a first adjusting plate, a second adjusting plate, a first push-pull rod and a second push-pull rod, wherein the furnace body is arranged in the furnace body and positioned above the crucible, the first adjusting plate and the second adjusting plate are of symmetrical structures, the first push-pull rod and the second push-pull rod are oppositely arranged and hinged with each other, the first end of the first push-pull rod is hinged with the first adjusting plate, the first end of the second push-pull rod is connected with the first end of the second adjusting plate, the second ends of the first push-pull rod and the second push-pull rod are hinged with each other, a hinged shaft of the first push-pull rod and the second push-pull rod is connected with a driving shaft penetrating through the furnace cover and penetrating into the furnace body, and the deflection angles of the first adjusting plate and the second adjusting plate are adjusted under the driving of the driving shaft;
the surfaces of the first adjusting plate and the second adjusting plate facing the crucible are revolution surfaces, and the included angle between a generatrix of each revolution surface and the revolution shaft is 30-60 degrees;
the rotation angle of the rotation surface is 160-180 degrees;
the growth equipment for the sapphire crystal further comprises a plurality of heating coils, and the plurality of heating coils respectively surround the crucible and are sequentially arranged from top to bottom;
the growth device of the sapphire crystal further comprises a first electrode and a second electrode, and two ends of each of the heating coils are respectively connected with the first electrode and the second electrode.
2. The sapphire crystal growth apparatus of claim 1, wherein a control switch is provided between each of the heating coils and the connecting wire of the first electrode, and the current is controlled to be turned on or off by the corresponding control switch.
3. The apparatus of claim 1, further comprising a heating plate disposed within the furnace body for supporting and heating the crucible.
4. The apparatus for growing a sapphire crystal according to claim 1, wherein the hinge shaft between the first regulating plate and the second regulating plate is fixed to the furnace body.
5. The apparatus of claim 1, wherein the first and second regulating plates are made of tungsten-molybdenum alloy.
6. The sapphire crystal growth apparatus according to claim 1, wherein a first radiation layer and a first heat preservation layer are sequentially arranged on the inner wall of the furnace body from inside to outside, and a second radiation layer and a second heat preservation layer are sequentially arranged on the bottom wall of the furnace body, wherein the second radiation layer faces the inside of the furnace body.
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| CN201610790572.3A CN106702490B (en) | 2016-08-30 | 2016-08-30 | Sapphire crystal growth equipment |
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| CN106702490B true CN106702490B (en) | 2020-12-11 |
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| CN111926380B (en) * | 2020-07-01 | 2021-10-19 | 中国科学院上海微系统与信息技术研究所 | Heat shield device for single crystal production furnace, control method and single crystal production furnace |
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| US5443034A (en) * | 1994-08-17 | 1995-08-22 | Solec International, Inc. | Method and apparatus for increasing silicon ingot growth rate |
| JP2000007496A (en) * | 1998-06-25 | 2000-01-11 | Mitsubishi Materials Silicon Corp | Single crystal pulling-up equipment and single crystal pulling-up method using the same |
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