CN103484937A - Sapphire manufacturing device and lens protection glass - Google Patents
Sapphire manufacturing device and lens protection glass Download PDFInfo
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- CN103484937A CN103484937A CN201210193576.5A CN201210193576A CN103484937A CN 103484937 A CN103484937 A CN 103484937A CN 201210193576 A CN201210193576 A CN 201210193576A CN 103484937 A CN103484937 A CN 103484937A
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- sapphire
- crucible
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Abstract
The invention provides a sapphire manufacturing device comprising a crucible, a material accommodated in the crucible, a heating device for heating the material in the crucible into a melt, a temperature control device for adjusting a temperature field in the crucible to make a temperature above the melt lower than the melting point of the material, a heat holding cover for covering the crucible, a seed crystal device comprising a seed crystal and a seed crystal clamp for clamping the seed crystal, a driving device for driving the seed crystal device to allow the seed crystal to be immersed in the melt and then to leave the melt at a predetermined speed and rotate to form a crystal, a post heater for heating the crystal after leaving the crucible so as to smoothly and stably cool the crystal to the room temperature, an outer cover for sealedly covering the heat holding cover, and a gas regulating system for pumping the outer cover emptily to be in a vacuum state and introducing gas required for formation of the crystal. The invention also provides lens protection glass applying the crystal.
Description
Technical field
The present invention relates to sapphire manufacture and utilisation technology, particularly the sapphire lens protection glass of a kind of sapphire manufacturing installation and application manufacturing.
Background technology
Sapphire has the advantages such as hardness is high, wear-resisting, therefore can be used as lens protection glass.Yet sapphire generally obtains by kyropoulos (kyropoulos crystal growth), growth velocity lower (growth 85-100 kilogram needs more than 20 days), cause cost higher, thereby indirectly raise the cost of lens protection glass.In addition, sapphire transmittance lower (<86%), in addition, affect the light-inletting quantity of camera lens, thus the image quality of deteriorated camera lens.
Summary of the invention
In view of this, the lens protection glass that is necessary to provide the sapphire of a kind of sapphire manufacturing installation reduced costs and employing manufacturing and can improves image quality.
A kind of sapphire manufacturing installation, it comprises a crucible, an aluminium sesquioxide material, a heating unit, a temperature control unit, a stay-warm case, a seed crystal device, a drive unit, a post-heater, an outer cover and a gas regulating system.This aluminium sesquioxide material storage is in this crucible.This heating unit comprises the coil of winding outside this crucible, and for the electromagnetic induction by this coil, this aluminium sesquioxide material of this crucible the inside is heated to a preset temperature, and under this preset temperature, this aluminium sesquioxide melting is a melt.Thereby this temperature control unit for adjusting temperature field in this crucible so that the temperature of this melt top lower than the fusing point of this aluminium sesquioxide material in supercooled state.This stay-warm case covers this crucible, for keeping the temperature field in this crucible.This seed crystal device comprises the seed chuck of a sapphire seed crystal and this sapphire seed crystal of clamping.This drive unit is used for driving this seed crystal device so that this sapphire seed crystal leaves this melt and rotates to form a sapphire crystal by a predetermined speed after immersing this melt.This post heating device leaves this sapphire crystal after this crucible so that this sapphire crystal steadily cools to room temperature for heating.This outer cover is airtight covers this stay-warm case, and electromagnetic protection is provided.This gas regulating system is for finding time this outer cover to vacuum state, and imports this sapphire crystal and form required gas.
One lens protection glass, it comprises that a substrate and is formed at this on-chip anti-reflective film.This substrate obtains by this sapphire crystal of cutting.This anti-reflective film comprises a plurality of repeatedly stacking high refractive index layer and low-index layers on this substrate of replacing successively, and this anti-reflective film film structure is (xHyL)
n5<=n<=8,1<x<2,1<y<2, n is positive integer, wherein, xH means this high refractive index layer, and its optical thickness is x/4 times of centre wavelength, yL means this low-index layer, its optical thickness is y/4 times of centre wavelength, the intermediate value that centre wavelength is operation wavelength, the number of times that n is this high refractive index layer and this low-index layer repeatedly stacking.
The speed that adopts above-mentioned sapphire manufacturing installation to manufacture this sapphire crystal can be more than three times of traditional kyropoulos.And the transmissivity of this lens protection glass can reach 99.5%.
The accompanying drawing explanation
The diagrammatic cross-section of the first state of the sapphire manufacturing installation that Fig. 1 is better embodiment of the present invention.
The diagrammatic cross-section of the second state of the sapphire manufacturing installation that Fig. 2 is better embodiment of the present invention.
The diagrammatic cross-section of the third state of the sapphire manufacturing installation that Fig. 3 is better embodiment of the present invention.
The diagrammatic cross-section of the lens protection glass that Fig. 4 is better embodiment of the present invention.
The main element nomenclature
| The |
10 |
| Crucible | 11 |
| The |
12 |
| Melt | |
| Heating unit | |
| 13 | |
| |
131 |
| |
14 |
| The high |
141 |
| |
142 |
| Stay- |
15 |
| |
16 |
| The |
161 |
| Sapphire crystal | |
| Seed chuck | |
| 162 | |
| |
17 |
| Post-heater | 18 |
| |
19 |
| |
191 |
| |
192 |
| |
20 |
| |
201 |
| |
2011 |
| Turbo- |
2012 |
| The |
2013 |
| Gas leading-in device | 202 |
| |
2021 |
| The |
2022 |
| The |
2023 |
| Valve | 203 |
| |
21 |
| |
22 |
| Lens protection glass | 30 |
| Substrate | 31 |
| Anti-reflective film | 32 |
| High refractive index layer | 321 |
| Low-index layer | 322 |
Following embodiment further illustrates the present invention in connection with above-mentioned accompanying drawing.
Embodiment
Refer to Fig. 1-3, the sapphire manufacturing installation 10 of better embodiment of the present invention, it comprises a crucible 11, an aluminium sesquioxide material 12, a heating unit 13, a temperature control unit 14, a stay-warm case 15, a seed crystal device 16, a drive unit 17, a post-heater 18, an outer cover 19 and a gas regulating system 20.This aluminium sesquioxide material 12 is contained in this crucible 11.This heating unit 13 comprises the coil 131 of winding outside this crucible 11, and for the electromagnetic induction by this coil 131, this aluminium sesquioxide material 12 of these crucible 11 the insides is heated to a preset temperature, under this preset temperature, this aluminium sesquioxide melting is a melt 12a.Thereby this temperature control unit 14 for adjusting temperature fields in this crucible 11 so that the temperature of this melt 12a top lower than the fusing point of this aluminium sesquioxide material 12 in supercooled state.This stay-warm case 15 covers this crucible 11, for keeping the temperature field in this crucible 11.This seed crystal device 16 comprises the seed chuck 162 of a sapphire seed crystal 161 and this sapphire seed crystal 161 of clamping.This drive unit 17 leaves this melt 12a rotation to form a sapphire crystal 161a for driving this seed crystal device 16 so that this sapphire seed crystal 161 immerses after these melts by a predetermined speed.This post heating device 13 leaves this sapphire crystal 161a after this crucible 11 so that this sapphire crystal 161a steadily cools to room temperature for heating.This outer cover 19 is airtight covers this stay-warm case 15, and electromagnetic protection is provided.This gas regulating system 20, and imports this sapphire crystal 161a and forms required gas to vacuum state for this outer cover 19 of finding time.
Concrete, this crucible 11 adopts the tungsten material to make.General, this preset temperature is 2050
oc, and therefore the fusing point of tungsten material can be used as the material of this crucible 11 higher than this preset temperature.
General, sapphire main chemical compositions is aluminium sesquioxide, therefore, adopts the raw material of this aluminium sesquioxide material 12 as this sapphire crystal 161a in present embodiment.Concrete, this aluminium sesquioxide material 12 is pure aluminium sesquioxide.
This heating unit 13 can be done heating in various degree to the interior different piece of this crucible 11, for example by the different piece to different these coils 131, apply the electric field of different capacity, make this melt 12a in this preset temperature, and this melt 12a top is lower than this preset temperature.
This temperature control unit 14 comprises a high temperature measurement meter 141 and a controller 142.This high temperature measurement meter 141 is for measuring the temperature field in this crucible.This controller 142 is controlled this heating unit 13 for the controller 142 according to recording makes this heating unit 13 do heating in various degree to the interior different piece of this crucible 11, for example by the different piece to different these coils 131, apply the electric field of different capacity, make this melt 12a in this preset temperature, and this melt 12a top is lower than this preset temperature.
This stay-warm case 15 adopts radiationless material to make.
This seed crystal clamping bar 162 is along the direction setting of the liquid level perpendicular to this melt 12a, and this sapphire seed crystal 161 is held on the end of this seed crystal clamping bar 162 near this melt 12a.Sapphire belongs to corundum family mineral, and trigonal system, have hexagonal structure.The crystallization direction of this sapphire seed crystal 161 is a axle (11
0), c-axis (0001), m axle (10
0).
This drive unit 17 can arrange with this outer cover 19 in, as the roof of this outer cover 19, and comprise linear motor (or cylinder) and rotation motor.So, at this sapphire seed crystal 161 this melt of contact 12a, and after slightly molten, lift and rotate this seed chuck 162, make melt 12a in supercooled state and crystallization on this sapphire seed crystal 161, constantly lift with rotary course in, grow columned this sapphire crystal 161a.
This post heating device 13 is arranged at outside this crucible 11, and available refractory oxide is made as molybdenum sheet, platinized platinum etc. as aluminum oxide, pottery or multiple layer metal reverberator.This temperature control unit 14 also can be controlled this post heating device 13, so that this sapphire crystal 161a steadily cools to room temperature.
This outer cover 19 can offer a pneumatic outlet 191 and a gas inlet 192.Usually, this pneumatic outlet 191 is positioned at the bottom of this outer cover 19, and this gas inlet 192 is positioned at the top of this outer cover 19.Certainly, the setting of this pneumatic outlet 191 and this gas inlet 192 also can be not limited to present embodiment, depending on demand.
This gas regulating system 20 comprises an evacuator device 201 and a gas leading-in device 202.
This evacuator device 201 comprises a mechanical pump 2011, a turbo-pump 2012 and one first conduit system 2013.This first conduit system 2013 is communicated with this outer cover 19 and this mechanical pump 2011 and this turbo-pump 2012 by this pneumatic outlet 191, and is provided with a plurality of gas valves 203, for controlling this mechanical pump 2011, with this turbo-pump 2012, with this outer cover 19, whether is communicated with.General, first be communicated with this outer cover 19 and this mechanical pump 2011 by controlling the plurality of gas valve 203, allow this mechanical pump 2011 first this outer cover 19 is evacuated to vacuum state to a certain degree.Then close being communicated with of this outer cover 19 and this mechanical pump 2011, and be communicated with this outer cover 19 and this turbo-pump 2012, this outer cover 19 of further finding time.Finally, close being communicated with between this outer cover 19 and this mechanical pump 2011 and this turbo-pump 2012, keep the vacuum state of this outer cover 19.
This gas leading-in device 202 comprises a plurality of gas sources 2021 and one second conduit system 2022.The plurality of gas source 2021 is for providing this sapphire crystal 161a to form required gas, for example argon gas (Ar) and helium (He).This second conduit system 2022 is communicated with this outer cover 19 and the plurality of gas source 2021 for passing through this gas inlet 192, and is provided with a plurality of gas valves 203, for controlling the plurality of gas source 2021, with this outer cover 19, whether is communicated with.This gas leading-in device 202 can also include the flow control meter (mass flow control) 2023 be arranged on this second conduit system 2022, for controlling the flow of desired gas.
Preferably, this sapphire manufacturing installation 10 also comprises a camera 21 and a residual gas analyser (residual gas analyzer) 22.This camera 21 is for monitoring the forming process of this sapphire crystal 161a.And this residual gas analyser 22 is for analyzing the gaseous constituent in this outer cover 19, thereby make this gas leading-in device 202 can import required gas.
Refer to Fig. 4, the lens protection glass 30 of better embodiment of the present invention, it comprises that a substrate 31 and is formed at this on-chip anti-reflective film 32.This substrate 31 obtains by this sapphire crystal of cutting 161a.This anti-reflective film 32 comprises a plurality of repeatedly stacking high refractive index layer 321 and low-index layers 322 on this substrate of replacing successively, this anti-reflective film film structure is (xHyL) n, 5<=n<=8,1<x<2,1<y<2, n is positive integer, wherein, xH means this high refractive index layer 321, its optical thickness is x/4 times of centre wavelength, and yL means this low-index layer, and its optical thickness is y/4 times of centre wavelength, the intermediate value that centre wavelength is operation wavelength, the number of times that n is this high refractive index layer and this low-index layer repeatedly stacking.
What with this substrate 31, directly contact is this high refractive index layer 321, therefore, and n=5,7 o'clock, these high refractive index layer 321 top sets, and n=6,8 o'clock, these low-index layer 322 top sets.
This high refractive index layer 321 can adopt titanium dioxide (TiO2) (specific refractory power is 2.705), and this low-index layer 322 can adopt silicon-dioxide (SiO2) (specific refractory power is 1.499).Be appreciated that this high refractive index layer 321 and this low-index layer 322 also can adopt the material that other specific refractory poweres are suitable.
The speed that adopts above-mentioned sapphire manufacturing installation 10 to manufacture this sapphire crystal 161a can be more than three times of traditional kyropoulos.And the transmissivity of this lens protection glass 30 can reach 99.5%.
In a word; those skilled in the art will be appreciated that; above embodiment is only for the present invention is described; and not be used as limitation of the invention; as long as within connotation scope of the present invention, within the appropriate change that above embodiment is done and variation all drop on the scope of protection of present invention.
Claims (14)
1. a sapphire manufacturing installation, is characterized in that comprising a crucible, an aluminium sesquioxide material, a heating unit, a temperature control unit, a stay-warm case, a seed crystal device, a drive unit, a post-heater, an outer cover and a gas regulating system; This aluminium sesquioxide material storage is in this crucible; This heating unit comprises the coil of winding outside this crucible, and for the electromagnetic induction by this coil, this aluminium sesquioxide material of this crucible the inside is heated to a preset temperature, and under this preset temperature, this aluminium sesquioxide melting is a melt; Thereby this temperature control unit for adjusting temperature field in this crucible so that the temperature of this melt top lower than the fusing point of this aluminium sesquioxide material in supercooled state; This stay-warm case covers this crucible, for keeping the temperature field in this crucible; This seed crystal device comprises the seed chuck of a sapphire seed crystal and this sapphire seed crystal of clamping; This drive unit is used for driving this seed crystal device so that this sapphire seed crystal leaves this melt and rotates to form a sapphire crystal by a predetermined speed after immersing this melt; This post heating device leaves this sapphire crystal after this crucible so that this sapphire crystal steadily cools to room temperature for heating; Airtight this stay-warm case that covers of this outer cover, for providing electromagnetic protection; This gas regulating system is for finding time this outer cover to vacuum state, and imports this sapphire crystal and form required gas.
2. sapphire manufacturing installation as claimed in claim 1, is characterized in that, this crucible adopts the tungsten material to make.
3. sapphire manufacturing installation as claimed in claim 1, it is characterized in that, this heating unit is used for applying the electric field of different capacity so that this crucible different piece is done to heating in various degree by the different piece to this coil, make this melt in this preset temperature, and this melt top is lower than this preset temperature.
4. sapphire manufacturing installation as claimed in claim 1, is characterized in that, this temperature control unit comprises that a high temperature measurement takes into account a controller; This high temperature measurement meter is for measuring the temperature field in this crucible; The heating that the electric field that this controller makes this heating unit apply different capacity by the different piece to this coil for this heating unit of Temperature Field Control according to recording is done in various degree different piece in this crucible makes this melt in this preset temperature, and this melt top is lower than this preset temperature.
5. sapphire manufacturing installation as claimed in claim 1, is characterized in that, this stay-warm case adopts radiationless material to make.
6. sapphire manufacturing installation as claimed in claim 1, is characterized in that, this seed crystal clamping bar is along the direction setting of the liquid level perpendicular to this melt, and this sapphire seed chuck is held in the end of this seed crystal clamping bar near this melt.
7. sapphire manufacturing installation as claimed in claim 1, is characterized in that, this temperature control unit also for controlling this post heating device so that this sapphire crystal steadily cools to room temperature.
8. sapphire manufacturing installation as claimed in claim 1, is characterized in that, this outer cover offers a pneumatic outlet and a gas inlet, and this pneumatic outlet is positioned at the bottom of this outer cover, and this gas inlet is positioned at the top of this outer cover; This gas regulating system comprises an evacuator device and a gas leading-in device; This evacuator device comprises a mechanical pump, a turbo-pump and one first conduit system; This first conduit system is communicated with this outer cover and this mechanical pump and this turbo-pump by this pneumatic outlet, and is provided with a plurality of gas valves, for controlling this mechanical pump, with this turbo-pump, with this outer cover, whether is communicated with; This gas leading-in device comprises a plurality of gas sources and one second conduit system; The plurality of gas source is for providing this sapphire crystal to form required gas, this second conduit system is for being communicated with this outer cover and the plurality of gas source by this gas inlet, and be provided with a plurality of gas valves, for controlling the plurality of gas source, with this outer cover, whether be communicated with.
9. sapphire manufacturing installation as claimed in claim 1, is characterized in that, this gas leading-in device is also drawn together the flow control meter be arranged on this second conduit system, for controlling the flow of desired gas.
10. sapphire manufacturing installation as claimed in claim 1, is characterized in that, this sapphire manufacturing installation also comprises a camera; This camera is for monitoring the forming process of this sapphire crystal.
11. sapphire manufacturing installation as claimed in claim 1, is characterized in that, this sapphire manufacturing installation also comprises a residual gas analyser; This residual gas analyser is used for analyzing the gaseous constituent in this outer cover, thereby makes this gas regulating system import required gas.
12. a lens protection glass, is characterized in that comprising that a substrate and is formed at this on-chip anti-reflective film; This substrate consists of a sapphire crystal; This anti-reflective film comprises a plurality of repeatedly stacking high refractive index layer and low-index layers on this substrate of replacing successively, and this anti-reflective film film structure is (xHyL)
n5<=n<=8,1<x<2,1<y<2, n is positive integer, wherein, xH means this high refractive index layer, and its optical thickness is x/4 times of centre wavelength, yL means this low-index layer, its optical thickness is y/4 times of centre wavelength, the intermediate value that centre wavelength is operation wavelength, the number of times that n is this high refractive index layer and this low-index layer repeatedly stacking.
13. lens protection glass as claimed in claim 12, is characterized in that, what with this substrate, directly contact is this high refractive index layer, n=5,7 o'clock, this high refractive index layer top set, and n=6,8 o'clock, this low-index layer top set.
14. lens protection glass as claimed in claim 12, is characterized in that, this high refractive index layer adopts titanium dioxide, and this low-index layer adopts silicon-dioxide.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210193576.5A CN103484937A (en) | 2012-06-13 | 2012-06-13 | Sapphire manufacturing device and lens protection glass |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201210193576.5A CN103484937A (en) | 2012-06-13 | 2012-06-13 | Sapphire manufacturing device and lens protection glass |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN103484937A true CN103484937A (en) | 2014-01-01 |
Family
ID=49825514
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201210193576.5A Pending CN103484937A (en) | 2012-06-13 | 2012-06-13 | Sapphire manufacturing device and lens protection glass |
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| Country | Link |
|---|---|
| CN (1) | CN103484937A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106702490A (en) * | 2016-08-30 | 2017-05-24 | 天通银厦新材料有限公司 | Growth equipment of sapphire crystal |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4832922A (en) * | 1984-08-31 | 1989-05-23 | Gakei Electric Works Co., Ltd. | Single crystal growing method and apparatus |
| US5853480A (en) * | 1996-04-22 | 1998-12-29 | Komatsu Electronic Metals Co., Ltd. | Apparatus for fabricating a single-crystal semiconductor |
| CN1486374A (en) * | 2000-12-22 | 2004-03-31 | Memc | Process for monitoring the gaseous environment of a crystal puller for semiconductor growth |
| US20080245292A1 (en) * | 2007-04-09 | 2008-10-09 | Sapphire Systems Inc. | Apparatus and methods of growing void-free crystalline ceramic products |
| CN102197167A (en) * | 2008-12-17 | 2011-09-21 | 昭和电工株式会社 | Process for producing single-crystal sapphire |
-
2012
- 2012-06-13 CN CN201210193576.5A patent/CN103484937A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4832922A (en) * | 1984-08-31 | 1989-05-23 | Gakei Electric Works Co., Ltd. | Single crystal growing method and apparatus |
| US5853480A (en) * | 1996-04-22 | 1998-12-29 | Komatsu Electronic Metals Co., Ltd. | Apparatus for fabricating a single-crystal semiconductor |
| CN1486374A (en) * | 2000-12-22 | 2004-03-31 | Memc | Process for monitoring the gaseous environment of a crystal puller for semiconductor growth |
| US20080245292A1 (en) * | 2007-04-09 | 2008-10-09 | Sapphire Systems Inc. | Apparatus and methods of growing void-free crystalline ceramic products |
| CN102197167A (en) * | 2008-12-17 | 2011-09-21 | 昭和电工株式会社 | Process for producing single-crystal sapphire |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106702490A (en) * | 2016-08-30 | 2017-05-24 | 天通银厦新材料有限公司 | Growth equipment of sapphire crystal |
| CN106702490B (en) * | 2016-08-30 | 2020-12-11 | 天通银厦新材料有限公司 | Sapphire crystal growth equipment |
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