CN106688108A - Graphene groove waveguide photodetector - Google Patents
Graphene groove waveguide photodetector Download PDFInfo
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- CN106688108A CN106688108A CN201480081823.XA CN201480081823A CN106688108A CN 106688108 A CN106688108 A CN 106688108A CN 201480081823 A CN201480081823 A CN 201480081823A CN 106688108 A CN106688108 A CN 106688108A
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- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 224
- 229910021389 graphene Inorganic materials 0.000 title claims abstract description 224
- 239000002184 metal Substances 0.000 claims abstract description 42
- 230000003287 optical effect Effects 0.000 claims description 173
- 230000005684 electric field Effects 0.000 claims description 59
- 239000000463 material Substances 0.000 claims description 38
- 239000004020 conductor Substances 0.000 claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 11
- 230000010287 polarization Effects 0.000 claims description 8
- 230000000644 propagated effect Effects 0.000 claims description 6
- 238000001514 detection method Methods 0.000 abstract description 4
- 239000010410 layer Substances 0.000 abstract 16
- 239000012792 core layer Substances 0.000 abstract 5
- 238000006243 chemical reaction Methods 0.000 abstract 1
- 238000010586 diagram Methods 0.000 description 17
- 239000000523 sample Substances 0.000 description 16
- 230000009466 transformation Effects 0.000 description 15
- 238000009826 distribution Methods 0.000 description 11
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 10
- 230000015572 biosynthetic process Effects 0.000 description 8
- 238000000034 method Methods 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 239000000377 silicon dioxide Substances 0.000 description 5
- 229910052681 coesite Inorganic materials 0.000 description 4
- 229910052906 cristobalite Inorganic materials 0.000 description 4
- 229910052682 stishovite Inorganic materials 0.000 description 4
- 229910052905 tridymite Inorganic materials 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000005516 engineering process Methods 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 229910052581 Si3N4 Inorganic materials 0.000 description 1
- 238000004458 analytical method Methods 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000004891 communication Methods 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000005350 fused silica glass Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 description 1
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/08—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors
- H01L31/10—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof in which radiation controls flow of current through the device, e.g. photoresistors characterised by potential barriers, e.g. phototransistors
- H01L31/101—Devices sensitive to infrared, visible or ultraviolet radiation
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Abstract
Provided is a graphene groove waveguide photodetector. The graphene groove waveguide photodetector has higher detection responsivity and photoelectric conversion efficiency than a common graphene waveguide photodetector. The graphene groove waveguide photodetector comprises: a lower sleeve layer (10); at least two core layers (11) disposed on the lower sleeve layer (10) at an interval, at least one core layer (11) of the at least two core layers (11) being in contact with the lower sleeve layer (10); groove layers (12) disposed on the lower sleeve layer (10) and between adjacent core layers (11), the number of the groove layers (12) being greater than or equal to 1, and the refractive index of each groove layer (12) being less than the refractive index of two core layers (11) adjacent to the groove layer (12); and a grapheme layer (13) and two metal electrodes (14), the grapheme layer (13) being in contact with at least one groove layer (12) of the groove layers (12) or the grapheme layer (13) being disposed in at least one groove layer (12) of the groove layers (12), and the grapheme layer (13) being in contact with at least one metal electrode (14) of the two metal electrodes (14).
Description
The present invention relates to field of photoelectric technology, more particularly to a kind of graphene groove Waveguide optical detector.
The optical device made with new material graphene, such as application of the graphene Waveguide optical detector in communication band is more and more extensive.Unique two-dimensional structure characteristic and linear electron energy dispersion that graphene has by it, make it have unique physical characteristic, for example, can absorb light in visible ray to middle infrared (Mid-IR) wave band, and with superior electron mobility etc..
At present, a kind of structural representation for the graphene Waveguide optical detector that people work out is as shown in figure 1, the optical mode (English detected using the graphene Waveguide optical detector：Optical mode) analogous diagram be Fig. 2 shown in.In Fig. 1, incident light is with silicon (chemical symbol：Si it is) sandwich layer, with vitreous silica (English：fused silica/SiO2) it is lower jacket layer (English：Cladding propagated in graphene Waveguide optical detector).Because graphene is arranged on sandwich layer, therefore when incident light enters waveguide (sandwich layer and jacket layer formation waveguide, wherein, jacket layer include lower jacket layer) in formed optical mode when, as shown in Figure 2, graphene absorbs photon from the evanescent field of optical mode and is converted into carrier, and the carrier passes through golden (chemical symbol：Au) electrode flowing produces current signal, so that the probe response degree for measuring graphene Waveguide optical detector is 0.1A/W (ampere/watt).
But, because the electric-field intensity to the optical mode of graphene region of probe response degree and its photoelectric transformation efficiency of graphene Waveguide optical detector is directly proportional, therefore when the graphene Waveguide optical detector using said structure, as shown in Figure 2, due to the evanescent field that graphene region is optical mode (electric-field intensity of evanescent field is relatively low), therefore the electric-field intensity of the optical mode of graphene region is relatively low, so as to cause the probe response degree of the graphene Waveguide optical detector and its photoelectric transformation efficiency relatively low.
The content of the invention
The present invention provides a kind of graphene groove Waveguide optical detector, and the graphene groove Waveguide is visited
Survey device has higher probe response degree and photoelectric transformation efficiency compared to common graphene Waveguide optical detector.
To reach above-mentioned purpose, the present invention is adopted the following technical scheme that：
In a first aspect, the present invention provides a kind of graphene groove Waveguide optical detector, including：
Lower jacket layer；
At least one sandwich layer being arranged at intervals at least two sandwich layers on the lower jacket layer, at least two sandwich layer is contacted with the lower jacket layer；
Be arranged on the lower jacket layer, the groove layer between each adjacent sandwich layer, the quantity of the groove layer is more than or equal to 1, and the refractive index of the groove layer is respectively less than the refractive index of two sandwich layer adjacent with the groove layer；
Graphene layer, and two metal electrodes, the graphene layer is contacted with least one groove layer in the groove layer or the graphene layer is arranged at least one groove layer in the groove layer, and the graphene layer is contacted with least one metal electrode in described two metal electrodes.
In the first possible implementation of first aspect,
It is air in the groove layer；Or
Non-conducting material or semi-conducting material are provided with the groove layer.
With reference to the first possible implementation of first aspect or first aspect, in second of possible implementation,
In the electric field of optical mode in the groove layer, direction of an electric field is more than gross energy of the direction of an electric field parallel to the component of groove face perpendicular to the gross energy of the component of groove face, and the groove face is the contact surface of adjacent sandwich layer and groove layer.
With reference to first aspect or first aspect the first possible implementation to any of second possible implementation implementation, in the third possible implementation, the graphene layer is contacted with least one groove layer in the groove layer,
When light is propagated along at least two sandwich layer, the plane-parallel of the polarization direction of the light and the lower jacket layer, the horizontal plane of the lower jacket layer is the plane that at least one sandwich layer at least two sandwich layer is contacted with the lower jacket layer.
With reference to first aspect or first aspect the first possible implementation to second can
Any of the implementation of energy implementation, in the 4th kind of possible implementation, the graphene layer is arranged at least one groove layer in the groove layer,
When light is propagated along at least two sandwich layer, the horizontal plane of the polarization direction of the light and the lower jacket layer, the horizontal plane of the lower jacket layer is the plane that at least one sandwich layer at least two sandwich layers is contacted with the lower jacket layer.
With reference to first aspect or first aspect the first possible implementation to any of the 4th kind of possible implementation implementation, in the 5th kind of possible implementation,
Each sandwich layer at least two sandwich layer includes many sub- sandwich layers, and/or
Each groove layer in the groove layer is comprising multiple pilot trench layer.
With reference to the 5th kind of possible implementation of first aspect, in the 6th kind of possible implementation,
The material of the multiple sub- sandwich layer is identical, or the material of the multiple sub- sandwich layer is different；
The material of the multiple pilot trench layer is identical, or the material of the multiple pilot trench layer is different.
With reference to first aspect or first aspect the first possible implementation to any of the 6th kind of possible implementation implementation, in the 7th kind of possible implementation,
At least one sandwich layer in the graphene layer whole sandwich layers adjacent with the graphene layer is contacted.
With reference to first aspect or first aspect the first possible implementation to any of the 7th kind of possible implementation implementation, in the 8th kind of possible implementation,
Separate layer is provided between the graphene layer whole sandwich layers adjacent with the graphene layer.
With reference to first aspect or first aspect the first possible implementation to any of the 8th kind of possible implementation implementation, in the 9th kind of possible implementation,
When the graphene layer is contacted with a metal electrode in described two metal electrodes, another metal electrode in described two metal electrodes is contacted with the extension of at least one sandwich layer at least two sandwich layer.
With reference to first aspect or first aspect the first possible implementation to any of the 9th kind of possible implementation implementation, in the tenth kind of possible implementation,
The refractive index of the lower jacket layer is less than the refraction of the whole sandwich layers contacted with the lower jacket layer
Rate.
With reference to first aspect or first aspect the first possible implementation to any of the tenth kind of possible implementation implementation, in a kind of the tenth possible implementation,
The material of the lower jacket layer is non-conducting material；
The material of at least two sandwich layer is semi-conducting material or non-conducting material.
With reference to first aspect or first aspect the first possible implementation to a kind of any of the tenth possible implementation implementation, in the 12nd kind of possible implementation,
The material of at least two sandwich layer is identical, or the material of at least two sandwich layer is different.
The graphene groove Waveguide optical detector that the present invention is provided, due to being provided with groove layer between spaced at least two sandwich layer, and the refractive index of groove layer is less than the refractive index of sandwich layer, therefore when the graphene groove Waveguide optical detector carries out optical detection, the Electric Field Distribution for the optical mode that can be formed light using the groove layer of waveguide is concentrated in groove layer, so, enhance the reciprocation of graphene layer and the light in groove layer, so that the electric-field intensity of the optical mode of graphene layer region is higher, and then cause graphene groove Waveguide optical detector provided in an embodiment of the present invention that there is higher photoelectric transformation efficiency and higher probe response degree.Graphene groove Waveguide optical detector i.e. provided in an embodiment of the present invention, has higher photoelectric transformation efficiency and probe response degree compared to common graphene Waveguide optical detector.
In order to illustrate more clearly about the embodiment of the present invention or technical scheme of the prior art, the required accompanying drawing used in embodiment or description of the prior art will be briefly described below, apparently, drawings in the following description are only some embodiments of the present invention, and the other embodiment for the present invention will not enumerate.
The structural representation for the graphene Waveguide optical detector that Fig. 1 provides for prior art；
The optical mode analogous diagram that Fig. 2 is detected for the graphene Waveguide optical detector that is provided using prior art；
Fig. 3 (a) is a kind of structural representation one of graphene groove Waveguide optical detector provided in an embodiment of the present invention；
Fig. 3 (b) is the structural representation one of another graphene groove Waveguide optical detector provided in an embodiment of the present invention；
The partial structural diagram that Fig. 4 is set for the groove layer and sandwich layer in a kind of graphene groove Waveguide optical detector provided in an embodiment of the present invention；
Fig. 5 is a kind of Electric Field Distribution schematic diagram of the optical mode of the groove waveguides of graphene groove Waveguide optical detector provided in an embodiment of the present invention；
Fig. 6 is the Electric Field Distribution schematic diagram of the optical mode of the groove waveguides of another graphene groove Waveguide optical detector provided in an embodiment of the present invention；
Fig. 7 is the sandwich layer and the internal structure schematic diagram of groove layer in another graphene groove Waveguide optical detector provided in an embodiment of the present invention；
Fig. 8 is the structural representation of another graphene groove Waveguide optical detector provided in an embodiment of the present invention；
Fig. 9 (a) is a kind of partial structural diagram of graphene groove Waveguide optical detector provided in an embodiment of the present invention；
Fig. 9 (b) is the partial structural diagram of another graphene groove Waveguide optical detector provided in an embodiment of the present invention；
Fig. 9 (c) is a kind of partial transversal section schematic diagram of graphene groove Waveguide optical detector provided in an embodiment of the present invention；
Fig. 9 (d) is the partial transversal section schematic diagram of another graphene groove Waveguide optical detector provided in an embodiment of the present invention；
Figure 10 (a) is a kind of structural representation two of graphene groove Waveguide optical detector provided in an embodiment of the present invention；
Figure 10 (b) is the structural representation two of another graphene groove Waveguide optical detector provided in an embodiment of the present invention.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is clearly and completely described, it is clear that described embodiment is only a part of embodiment of the present invention, rather than whole embodiments.
It should be noted that：" on ", " under ", " interior " mentioned in the embodiment of the present invention
And " outer " etc. simply refer to the attached drawing is illustrated to the embodiment of the present invention, not as limiting term.
Graphene groove Waveguide optical detector provided in an embodiment of the present invention includes lower jacket layer；At least one sandwich layer being arranged at intervals at least two sandwich layers on the lower jacket layer, at least two sandwich layer is contacted with the lower jacket layer；Be arranged on the lower jacket layer, the groove layer between each adjacent sandwich layer, the quantity of the groove layer is more than or equal to 1, and the refractive index of the groove layer is less than the refractive index of two sandwich layer adjacent with the groove layer；Graphene layer and two metal electrodes, the graphene layer is contacted with least one groove layer in the groove layer or the graphene layer is arranged at least one groove layer in the groove layer, and the graphene layer is contacted with least one metal electrode in described two metal electrodes.
It should be noted that, in the embodiment of the present invention, the graphene groove Waveguide optical detector of structure with foregoing description has a variety of, the design of such as graphene layer and metal electrode in graphene groove Waveguide optical detector can have a variety of methods, so as to obtain the graphene groove Waveguide optical detector with a variety of different structures.In the embodiment of the present invention, for convenience, and it is easy to more clearly and completely understand technical scheme, carries out exemplary explanation only exemplified by several below.
Exemplary, the embodiment of the present invention provides a kind of graphene groove Waveguide optical detector 1, such as shown in Fig. 3 (a) and Fig. 3 (b), and the graphene groove Waveguide optical detector 1 includes lower jacket layer 10；At least one sandwich layer being arranged at intervals at least two sandwich layers 11 on the lower jacket layer 10, at least two sandwich layer 11 is contacted with the lower jacket layer 10；Be arranged on the lower jacket layer 10, the groove layer 12 between each adjacent sandwich layer 11, the quantity of the groove layer 12 is more than or equal to 1, and the refractive index of the groove layer 12 is less than the refractive index of two sandwich layer 11 adjacent with the groove layer 12；Graphene layer 13 and two metal electrodes 14, the graphene layer 13 is contacted with least one groove layer in the groove layer 12 or the graphene layer 13 is arranged at least one groove layer in the groove layer 12, and the graphene layer 13 is contacted with least one metal electrode in described two metal electrodes 14.
Specifically, when the graphene layer 13 is contacted with least one groove layer in the groove layer 12, (wherein, Fig. 3 (a) is only exemplary to include graphene layer shown in structural representation such as Fig. 3 (a) of graphene groove Waveguide optical detector 1 provided in an embodiment of the present invention
13 contact with the groove layer 12)；When at least one groove layer that the graphene layer 13 is arranged in the groove layer 12, shown in structural representation such as Fig. 3 (b) of graphene groove Waveguide optical detector 1 provided in an embodiment of the present invention.
Further, on the one hand, because light enters waveguide (sandwich layer, groove layer and jacket layer formation waveguide, wherein jacket layer includes lower jacket layer) electric field of optical mode that is formed is concentrated mainly in groove layer, and electric-field intensity of the probe response degree and its photoelectric transformation efficiency of graphene groove Waveguide optical detector to the optical mode of graphene layer region is directly proportional, therefore, graphene groove Waveguide optical detector (accurate horizontal magnetic (English shown in Fig. 3 (b)：Quasi transverse magnetic, abbreviation：Quasi-TM) groove waveguides photo-detector) (quasi- transverse electric is (English with the graphene groove Waveguide optical detector shown in Fig. 3 (a)：Quasi transverse electric, abbreviation：Quasi-TE) groove waveguides photo-detector) compare, because the graphene layer in accurate horizontal magnetic groove waveguides photo-detector is largely all disposed within groove layer, and the graphene layer in quasi- transverse electric groove waveguides photo-detector only contacts with groove layer and (is arranged on groove layer edge), therefore accurate horizontal magnetic groove waveguides photo-detector has higher probe response degree and photoelectric transformation efficiency than quasi- transverse electric groove waveguides photo-detector.On the other hand, graphene groove Waveguide optical detector shown in Fig. 3 (b) is compared with the graphene groove Waveguide optical detector shown in Fig. 3 (a), the loss of light is smaller, and groove layer size (in Fig. 3 (a) size of groove layer be groove layer width, the size of groove layer is the thickness of groove layer in Fig. 3 (b)) in the case of identical, required precision of the graphene groove Waveguide optical detector to manufacture craft shown in Fig. 3 (b) is relatively low.
Wherein, in the graphene groove Waveguide optical detector shown in Fig. 3 (a), the size (being the width of groove layer) of groove layer is D1；In the graphene groove Waveguide optical detector shown in Fig. 3 (b), the size (being the thickness of groove layer) of groove layer is D2.
In above-mentioned Fig. 3 (a) and Fig. 3 (b), graphene groove Waveguide optical detector provided in an embodiment of the present invention is 3 only with sandwich layer 11, groove layer 12 is 2, and graphene layer 13 all contacted with two metal electrodes 14 exemplified by carry out exemplary explanation.Wherein, in Fig. 3 (b), graphene groove Waveguide optical detector provided in an embodiment of the present invention only carries out exemplary explanation so that graphene layer 13 is arranged in a groove layer 12 as an example.
It should be noted that in graphene groove Waveguide optical detector provided in an embodiment of the present invention, because the refractive index of groove layer is less than the refractive index of sandwich layer, so can by by waveguide (sandwich layer,
Groove layer and jacket layer formation waveguide, wherein jacket layer includes lower jacket layer) Electric Field Distribution of optical mode of light formation propagated is concentrated mainly in groove layer, so as to strengthen the reciprocation of graphene layer and the light in groove layer, the electric-field intensity of optical mode to cause graphene layer region is higher, and then causes graphene groove Waveguide optical detector provided in an embodiment of the present invention to have higher photoelectric transformation efficiency and higher probe response degree compared to common graphene Waveguide optical detector.
Graphene groove Waveguide optical detector provided in an embodiment of the present invention, due to being provided with groove layer between spaced at least two sandwich layer, and the refractive index of groove layer is less than the refractive index of sandwich layer, therefore when the graphene groove Waveguide optical detector carries out optical detection, the Electric Field Distribution for the optical mode that can be formed light using the groove layer of waveguide is concentrated in groove layer, so, enhance the reciprocation of graphene layer and the light in groove layer, so that the electric-field intensity of the optical mode of graphene layer region is higher, and then cause graphene groove Waveguide optical detector provided in an embodiment of the present invention that there is higher photoelectric transformation efficiency and higher probe response degree.Graphene groove Waveguide optical detector i.e. provided in an embodiment of the present invention, has higher photoelectric transformation efficiency and probe response degree compared to common graphene Waveguide optical detector.
Optionally, it can be air in the groove layer 12, i.e., be not provided with any visible material in described groove layer 12；Or, non-conducting material can also be provided with the groove layer 12, such as can be provided with silica (symbol in described groove layer 12：SiO2) or silicon nitride (symbol：SiN) etc.；Or, semi-conducting material can also be provided with the groove layer 12, such as can be provided with Si in the groove layer 12.
Optionally, as shown in Figure 4, the partial structural diagram set for groove layer 12 and sandwich layer 11, wherein, in the electric field of the optical mode formed in the groove layer 12, direction of an electric field is more than in the electric field of the optical mode formed in gross energy of the direction of an electric field parallel to the component of groove face, i.e., described groove layer 12 perpendicular to the gross energy of the component of groove face 120, and the direction (mark is in Fig. 4) of the component of most of electric field is perpendicular to groove face 120.Wherein, the groove face 120 is the contact surface of adjacent sandwich layer 11 and groove layer 12.
Wherein, Fig. 4 only carries out exemplary explanation by taking the graphene groove Waveguide optical detector as shown in Fig. 3 (a) as an example, for the groove layer 12 of the graphene groove Waveguide optical detector as shown in Fig. 3 (b) and the setting structure of sandwich layer 11 and the graphene groove Waveguide shown in Fig. 3 (a)
The groove layer 12 of detector is similar with the setting structure of sandwich layer 11, and here is omitted.
Graphene groove Waveguide optical detector 1 provided in an embodiment of the present invention, waveguide (sandwich layer, groove layer and the jacket layer formation waveguide entered when light in the graphene groove Waveguide optical detector 1, wherein, jacket layer includes lower jacket layer) when, light formation optical mode, graphene produces current signal by absorbing the carrier that photon is produced when flowing through metal electrode, the electric-field intensity of optical mode of the current signal to being formed in groove layer is directly proportional, and only the direction of an electric field of optical mode could obtain gain perpendicular to the component of groove face in groove layer.Therefore, in order that in the electric field of optical mode in groove layer, the direction of the component of most of electric field is perpendicular to groove face, in the graphene groove Waveguide optical detector as shown in Fig. 3 (a), when light ducting, the polarization direction (direction of the component of most of electric field i.e. in the electric field of optical mode) of light is parallel with the horizontal plane 100 of the lower jacket layer 10, and the horizontal plane 100 of the lower jacket layer 10 is the plane that at least two sandwich layer 11 is contacted with the lower jacket layer 10；In the graphene groove Waveguide optical detector as shown in Fig. 3 (b), when light ducting, the polarization direction (direction of the component of most of electric field i.e. in the electric field of optical mode) of light is vertical with the horizontal plane 100 of the lower jacket layer 10, the plane that the horizontal plane 100 of the lower jacket layer 10 contacts for a sandwich layer at least two sandwich layer 11 with the lower jacket layer 10.
As shown in figure 5, to utilize finite element analysis (English to the graphene groove Waveguide optical detector provided in an embodiment of the present invention as shown in Fig. 3 (a)：Finite element method, FEM the Electric Field Distribution of the optical mode of the Quasi-TE groove waveguides) calculated, wherein, what quasi- transverse electric referred to the component of most of electric field in the electric field of optical mode is oriented parallel to planar waveguide (planar waveguide is the plane parallel with sandwich layer and lower the jacket layer plane contacted).As shown in Figure 6, for to Electric Field Distribution of the graphene groove Waveguide optical detector provided in an embodiment of the present invention as shown in Fig. 3 (b) using the optical mode of the FEM quasi-TM groove waveguides calculated, wherein, accurate horizontal magnetic refers to the direction of the component of most of electric field in the electric field of optical mode perpendicular to planar waveguide.
It should be noted that the abscissa and left ordinate in Fig. 5 and Fig. 6 represent physical location of the graphene layer in optical mode；Right ordinate in Fig. 5 and Fig. 6 represents that the electric-field intensity of the optical mode of graphene layer region accounts for the ratio of the electric-field intensity of whole optical mode.
As can be seen that above-mentioned graphene groove Waveguide optical detector such as Fig. 3 (a) and as shown in 3 (b), although graphene be still lower jacket layer evanescent field it is light absorbing, but optical mode
Electric Field Distribution be but concentrated mainly in groove layer, its physical cause is the boundary condition that optical mode has to comply with maxwell equation group.Wherein, the boundary condition of maxwell equation group is：On the space boundary of different refractivity, direction of an electric field square will be inversely proportional (and direction of an electric field is equal parallel to the intensity of the component on border) perpendicular to the intensity of the component on border on both sides with the refractive index in space where it.That is, when polarization direction (the i.e. polarization direction of light of optical mode, namely the direction of the component of most of electric field of optical mode) perpendicular to groove face when, in the electric field of optical mode, intensity perpendicular to the component of the electric field of groove face in groove layer (refractive index of the refractive index of groove layer less than the sandwich layer adjacent with groove layer) is more than the intensity of the component in sandwich layer (refractive index of sandwich layer is more than the refractive index of the groove layer adjacent with sandwich layer) the interior electric field perpendicular to groove face, i.e. the Electric Field Distribution of optical mode, which can be just concentrated in groove layer, (can be understood as in groove layer in the electric field of the optical mode of formation, direction of an electric field can obtain gain perpendicular to the component of groove face).It can so make it that the electric-field intensity of the optical mode of graphene layer region is higher, so as to enhance the reciprocation of graphene layer and the light in groove layer, and then improve the photoelectric transformation efficiency and probe response degree of common graphene Waveguide optical detector.Graphene groove Waveguide optical detector i.e. provided in an embodiment of the present invention, has higher photoelectric transformation efficiency and probe response degree compared to common graphene Waveguide optical detector.
It should be noted that in graphene groove Waveguide optical detector 1 provided in an embodiment of the present invention, the size of groove layer 12 and the size of sandwich layer 11 are not limited.Specifically, in graphene groove Waveguide optical detector 1 provided in an embodiment of the present invention, the size of each groove layer in groove layer 12 can be less than the size of each sandwich layer in the sandwich layer adjacent with the groove layer；The size of each groove layer in groove layer 12 can also be equal to the size of each sandwich layer in the sandwich layer adjacent with the groove layer；The size of each groove layer in groove layer 12 can also be more than the size of each sandwich layer in the sandwich layer adjacent with the groove layer.
Wherein, the size of above-mentioned groove layer is the width of groove layer or the thickness of groove layer；The size of above-mentioned sandwich layer is also the width of sandwich layer or the thickness of sandwich layer.Specifically, in graphene groove Waveguide optical detector as shown in Fig. 3 (a), the size of groove layer is the width of groove layer, the size of sandwich layer is also the width of sandwich layer；In graphene groove Waveguide optical detector as shown in Fig. 3 (b), the size of groove layer is the thickness of groove layer, and the size of sandwich layer is also the thickness of sandwich layer.
Further, in the embodiment of the present invention, the size of sandwich layer it is smaller (width it is narrower or
Thickness is thinner), the decay that light reaches groove layer border in the core is just smaller, and light also more easily propagates through sandwich layer and reaches groove layer, and so, in the electric field of optical mode, direction of an electric field just can be concentrated on more in groove layer perpendicular to the component of groove face；The size of groove layer is smaller (width is narrower or thickness is thinner), decay of the light in groove layer is just smaller, so that the superposition value of the electric-field intensity of the optical mode in groove layer is bigger, so, in the electric field of optical mode, direction of an electric field is higher perpendicular to the gain that the component of groove face is obtained.
Specifically, the size of the sandwich layer of waveguide and the size of groove layer can be designed according to the actual requirements, the invention is not limited in this regard.
For example, the size of the sandwich layer of the graphene groove Waveguide optical detector in the embodiment of the present invention as shown in Fig. 3 (a) is specifically as follows：The width of sandwich layer 11 is 500 nanometers；The specific size of groove layer can be：The width of groove layer 12 is 50 nanometers.
In another example, the size of the sandwich layer of the graphene groove Waveguide optical detector in the embodiment of the present invention as shown in Fig. 3 (b) is specifically as follows：The width of sandwich layer 11 is 500 nanometers；The specific size of groove layer can be：The thickness of groove layer 12 is 20 nanometers.
It is preferred that, as shown in Figure 7, for sandwich layer 11 and the internal structure schematic diagram of groove layer 12, in graphene groove Waveguide optical detector provided in an embodiment of the present invention, each sandwich layer at least two sandwich layer 11 is comprising many sub- sandwich layers 110, and/or each groove layer in the groove layer 12 is comprising multiple pilot trench layer 121.
The structure of graphene groove Waveguide optical detector 1 as shown in Figure 7, preferably the Electric Field Distribution of optical mode can be concentrated in groove layer, so as to further enhance the reciprocation of graphene layer and the light in groove layer, preferably to improve the photoelectric transformation efficiency and probe response degree of photo-detector.
Wherein, Fig. 7 only carries out exemplary explanation by taking the graphene groove Waveguide optical detector as shown in Fig. 3 (b) as an example, the internal structure of sandwich layer 11 and groove layer 12 for the graphene groove Waveguide optical detector as shown in Fig. 3 (a) is similar with the sandwich layer 11 of the graphene groove Waveguide optical detector as shown in Fig. 3 (b) and the internal structure of groove layer 12, and here is omitted.
Optionally, the material that many sub- sandwich layers of each sandwich layer are constituted in graphene groove Waveguide optical detector 1 as shown in Figure 7 can be with identical, can also be different, can be specifically designed according to actual use demand, the present invention is not restricted.
Accordingly, the material that multiple pilot trench layer of each groove layer is constituted in graphene groove Waveguide optical detector 1 as shown in Figure 7 can be with identical, can also be different, can be specifically designed according to actual use demand, the present invention is not restricted.
Optionally, on the basis of above-mentioned Fig. 3 (a) and Fig. 3 (b), the embodiment of the present invention also provides a kind of graphene groove Waveguide optical detector as shown in Figure 8.Specifically, all parts in graphene groove Waveguide optical detector as shown in Figure 8 and its between annexation and all parts in the graphene groove Waveguide optical detector shown in above-mentioned Fig. 3 (a) and Fig. 3 (b) and its between annexation it is similar, it is specific can be found in all parts in the graphene groove Waveguide optical detector shown in above-mentioned Fig. 3 (a) and Fig. 3 (b) and its between annexation description, here is omitted.
Wherein, in graphene groove Waveguide optical detector as shown in Figure 8, the graphene layer 13 can be understood as being arranged in the groove layer 12.Exemplary, in fig. 8, the graphene layer 13 can be understood as in the first groove layer 122 for being arranged in the groove layer 12, it is understood that to be arranged in the second groove layer 123 in the groove layer 12.
Optionally, as shown in Fig. 3 (a), Fig. 3 (b) and Fig. 8, at least one sandwich layer in the graphene layer 13 whole sandwich layers adjacent with the graphene layer 13 is contacted.
Specifically, as shown in Fig. 3 (a), the graphene layer 13 whole sandwich layers adjacent with the graphene layer 13 are contacted.As shown in Fig. 3 (b), a sandwich layer in the graphene layer 13 whole sandwich layers adjacent with the graphene layer 13 is contacted.As shown in figure 8, the half sandwich layer in the graphene layer 13 whole sandwich layers adjacent with the graphene layer 13 is contacted.
Optionally, in the graphene groove Waveguide optical detector as shown in Fig. 3 (a), Fig. 3 (b) and Fig. 8, separate layer is provided between the graphene layer 13 and whole sandwich layers adjacent with the graphene layer 13.It is the partial structural diagram that separate layer 15 is provided between graphene layer 13 and whole sandwich layers adjacent with the graphene layer 13 as shown in Fig. 9 (a), Fig. 9 (b), Fig. 9 (c) and Fig. 9 (d).
Wherein, Fig. 9 (a) is that the partial structural diagram of separate layer 15 is provided between graphene layer 13 and whole sandwich layers adjacent with the graphene layer 13 in the graphene groove Waveguide optical detector shown in Fig. 3 (a)；Fig. 9 (b) is the graphene slot wave shown in Fig. 3 (b)
The partial structural diagram of separate layer 15 is provided with guide-lighting detector between graphene layer 13 and whole sandwich layers adjacent with the graphene layer 13.Fig. 9 (c) is partial transversal section schematic diagram corresponding with Fig. 9 (a)；Fig. 9 (d) is partial transversal section schematic diagram corresponding with Fig. 9 (b).
The material of separate layer 15 in the embodiment of the present invention can be semi-conducting material or non-conducting material.It can be specifically designed according to actual use demand, the present invention is not restricted.
It should be noted that, the graphene layer 13 sandwich layer adjacent with the graphene layer 13 is contacted, separate layer is provided with compared between the graphene layer 13 and the sandwich layer adjacent with the graphene layer 13, the manufacture craft of graphene groove Waveguide optical detector can be simplified, and cost can be saved.Accordingly, because the graphene layer 13 is semi-conducting material, therefore, separate layer is provided between the graphene layer 13 and the sandwich layer adjacent with the graphene layer 13, the sandwich layer adjacent with the graphene layer 13 compared to the graphene layer 13 is contacted, and can prevent the graphene layer 13 from leaking electricity to a certain extent.
Optionally, as shown in Figure 10 (a) and Figure 10 (b), when the graphene layer 13 is contacted with a metal electrode in described two metal electrodes 14, another metal electrode in described two metal electrodes 14 is contacted with least one sandwich layer at least two sandwich layer 11.In the structure of graphene groove Waveguide optical detector as shown in Figure 10 (a) and Figure 10 (b), sandwich layer (can be the semi-conducting materials such as silicon) can pass to the inclined voltage processed of metal electrode around graphene layer, so as to form electrical potential difference between two metal electrodes, and then current signal is formed when causing the carrier that graphene layer absorbs photon generation to flow through metal electrode.
Specifically, as shown in Figure 10 (a) and Figure 10 (b), another metal electrode in described two metal electrodes 14 is contacted with the extension 110 of at least one sandwich layer at least two sandwich layer 11.Wherein, the extension 110 of at least one sandwich layer can be identical material with least one sandwich layer, or the extension 110 of at least one sandwich layer can be different materials from least one sandwich layer.
Wherein, the sandwich layer of graphene groove Waveguide optical detector and the design of groove layer shown in (a) in above-mentioned Figure 10 are identical with the sandwich layer of the graphene groove Waveguide optical detector shown in Fig. 3 (a) and the design of groove layer；The sandwich layer of graphene groove Waveguide optical detector shown in (b) in above-mentioned Figure 10 and the design of groove layer and the graphene groove Waveguide optical detector shown in Fig. 3 (b)
Sandwich layer is identical with the design of groove layer.
It should be noted that, graphene groove Waveguide optical detector provided in an embodiment of the present invention, the graphene layer 13 can be contacted with described two metal electrodes 14, can also be contacted with a metal electrode in described two metal electrodes 14, and the present invention is not specifically limited to this.
Optionally, the refractive index of the lower jacket layer 10 is less than the refractive index of whole sandwich layers 11 contacted with the lower jacket layer 10, so can be by most refracting light incident to sandwich layer 11, to improve the energy of the light in sandwich layer 11.
Optionally, the material of the metal electrode 14 can be the golden (symbol of element：The metal material such as Au).
Optionally, the material of the lower jacket layer 10 is the nonmetallic materials such as non-conducting material or semi-conducting material；The material of at least two sandwich layer 11 is semi-conducting material or non-conducting material.
Exemplary, the lower jacket layer 10 can be SiO2Deng non-conducting material；At least two sandwich layer 11 can be the materials such as Si or SiN；The groove layer 12 can be SiO2Or the material such as SiN, the present invention is not specifically limited to this.
Wherein, any two sandwich layer at least two sandwich layer 11 can be identical material, or different materials.When the quantity of the groove layer 12 is more than 1, any two sandwich layer at least two sandwich layer 11 can be identical material, or different materials, the present invention is not specifically limited to this.
The material and quantity of the material of lower jacket layer 10 described above, the material of at least two sandwich layer 11 and quantity and the groove layer 12 are only exemplary enumerate, the material and quantity of the lower jacket layer 10, at least two sandwich layer 11 and the groove layer 12 in graphene groove Waveguide optical detector provided in an embodiment of the present invention include but is not limited to it is above-mentioned enumerate it is several, it can be specifically designed according to actual use demand, the present invention is not specifically limited to this.
Graphene groove Waveguide optical detector provided in an embodiment of the present invention, due to being provided with groove layer between spaced at least two sandwich layer, and the refractive index of groove layer is less than the refractive index of sandwich layer, therefore when the graphene groove Waveguide optical detector carries out optical detection, the Electric Field Distribution for the optical mode that can be formed light using the groove layer of waveguide is concentrated in groove layer, so, strengthen
The reciprocation of graphene layer and the light in groove layer, so that the electric-field intensity of the optical mode of graphene layer region is higher, and then cause graphene groove Waveguide optical detector provided in an embodiment of the present invention that there is higher photoelectric transformation efficiency and higher probe response degree.Graphene groove Waveguide optical detector i.e. provided in an embodiment of the present invention, has higher photoelectric transformation efficiency and probe response degree compared to common graphene Waveguide optical detector.
It should be noted that in graphene groove Waveguide optical detector provided in an embodiment of the present invention, the preparation method of at least two sandwich layer 11 and the groove layer 12 can be following one kind：
(1) sandwich layer of a layer entity is first made on the lower jacket layer 10, and slotted successively according to design requirement in the sandwich layer of the entity, it is arranged on forming at least two sandwich layers 11 and the spaced structure of groove layer 12, i.e. groove layer 12 between two adjacent sandwich layers 11.
Wherein it is possible to just open a groove at interval of certain spacing in the core, sandwich layer and the spaced structure of groove layer can be so formed.Specifically, the method slotted in the core to protect the sandwich layer for needing to retain, then can be etched groove layer to come, then inserted the material of groove layer in the groove layer etched using the method for deposition first with photolithographicallpatterned formation masterplate using deep reactive ion etch.
(2) first interval makes a sandwich layer 11 on the lower jacket layer 10, and deposits a groove layer 12 on this sandwich layer 11, and a sandwich layer 11 is then deposited in this groove layer 12.Groove layer 12 is such as further added by, then a redeposited groove layer 12 on the sandwich layer 11 of last time deposition, then a redeposited sandwich layer 11 in this groove layer 12.It is repeated in above step and can form at least two sandwich layer 11 and the spaced structure of groove layer 12, i.e. groove layer 12 being arranged between two adjacent sandwich layers 11.
It should be noted that at least two sandwich layer 11 and the groove layer 12 that the preparation method provided according to above-mentioned (1) is produced are specific as shown in Fig. 3 (a) and Figure 10 (a)；At least two sandwich layer 11 and the groove layer 12 that the preparation method that on time above-mentioned (2) are provided is produced are specific as shown in Fig. 3 (b) and Figure 10 (b).
Further; the preparation method that above-mentioned (1) and (2) are provided only is exemplary enumerates; the preparation method that including but not limited to above-mentioned (1) of the embodiment of the present invention and (2) are provided, other can make the method for sandwich layer in graphene groove Waveguide optical detector provided in an embodiment of the present invention and groove layer all within protection scope of the present invention.
In graphene groove Waveguide optical detector provided in an embodiment of the present invention, the preparation method of the lower jacket layer 10, the graphene layer 13 and described two metal electrodes 14 in addition at least two sandwich layer 11 and the groove layer 12 is identical with making the method for lower jacket layer, graphene layer and two metal electrodes in the prior art, and lower jacket layer, graphene layer and two specific design structures of metal electrode can carry out the adjustment of adaptability according to actual needs, here is omitted.
It is apparent to those skilled in the art that, for convenience and simplicity of description, only with the division progress of above-mentioned each module for example, in practical application, it can be the structure for meeting use demand as needed and by the internal structure design of the said goods, will not be repeated here.
In several embodiments provided herein, it should be understood that disclosed product, there can be other internal structures.For example, product embodiments described above are only schematical, for example, all parts and its between annexation be only a kind of exemplary enumerate, several structures of above-described embodiment description are not limited to, i.e., the actual realization of specific product can also be other any structures for meeting use demand.It is another, can be with electrical, machinery or other form connections between all parts.
It is described above; only embodiment of the invention, but protection scope of the present invention is not limited thereto, any one skilled in the art the invention discloses technical scope in; change or replacement can be readily occurred in, should be all included within the scope of the present invention.Therefore, protection scope of the present invention described should be defined by scope of the claims.
Claims (13)
- A kind of graphene groove Waveguide optical detector, it is characterised in that including：Lower jacket layer；At least one sandwich layer being arranged at intervals at least two sandwich layers on the lower jacket layer, at least two sandwich layer is contacted with the lower jacket layer；Be arranged on the lower jacket layer, the groove layer between each adjacent sandwich layer, the quantity of the groove layer is more than or equal to 1, and the refractive index of the groove layer is respectively less than the refractive index of two sandwich layer adjacent with the groove layer；Graphene layer, and two metal electrodes, the graphene layer is contacted with least one groove layer in the groove layer or the graphene layer is arranged at least one groove layer in the groove layer, and the graphene layer is contacted with least one metal electrode in described two metal electrodes.
- Graphene groove Waveguide optical detector according to claim 1, it is characterised in thatIt is air in the groove layer；Or non-conducting material or semi-conducting material are provided with the groove layer.
- Graphene groove Waveguide optical detector according to claim 1 or 2, it is characterised in thatIn the electric field of optical mode in the groove layer, direction of an electric field is more than gross energy of the direction of an electric field parallel to the component of groove face perpendicular to the gross energy of the component of groove face, and the groove face is the contact surface of adjacent sandwich layer and groove layer.
- Graphene groove Waveguide optical detector according to claim any one of 1-3, it is characterised in that the graphene layer is contacted with least one groove layer in the groove layer,When light is propagated along at least two sandwich layer, the plane-parallel of the polarization direction of the light and the lower jacket layer, the horizontal plane of the lower jacket layer is the plane that at least one sandwich layer at least two sandwich layer is contacted with the lower jacket layer.
- Graphene groove Waveguide optical detector according to claim any one of 1-3, it is characterised in that the graphene layer is arranged at least one groove layer in the groove layer,When light is propagated along at least two sandwich layer, the polarization direction of the light and the horizontal plane of the lower jacket layer, the horizontal plane of the lower jacket layer is at least two sandwich layer The plane that at least one sandwich layer is contacted with the lower jacket layer.
- Graphene groove Waveguide optical detector according to claim any one of 1-5, it is characterised in thatEach sandwich layer at least two sandwich layer includes many sub- sandwich layers, and/orEach groove layer in the groove layer is comprising multiple pilot trench layer.
- Graphene groove Waveguide optical detector according to claim 6, it is characterised in thatThe material of the multiple sub- sandwich layer is identical, or the material of the multiple sub- sandwich layer is different；The material of the multiple pilot trench layer is identical, or the material of the multiple pilot trench layer is different.
- Graphene groove Waveguide optical detector according to claim any one of 1-7, it is characterised in thatAt least one sandwich layer in the graphene layer whole sandwich layers adjacent with the graphene layer is contacted.
- Graphene groove Waveguide optical detector according to claim any one of 1-7, it is characterised in thatSeparate layer is provided between the graphene layer whole sandwich layers adjacent with the graphene layer.
- Graphene groove Waveguide optical detector according to claim any one of 1-9, it is characterised in thatWhen the graphene layer is contacted with a metal electrode in described two metal electrodes, another metal electrode in described two metal electrodes is contacted with the extension of at least one sandwich layer at least two sandwich layer.
- Graphene groove Waveguide optical detector according to claim any one of 1-10, it is characterised in thatThe refractive index of the lower jacket layer is less than the refractive index of the whole sandwich layers contacted with the lower jacket layer.
- Graphene groove Waveguide optical detector according to claim any one of 1-11, it is characterised in thatThe material of the lower jacket layer is non-conducting material or semi-conducting material；The material of at least two sandwich layer is semi-conducting material or non-conducting material.
- Graphene groove Waveguide optical detector according to claim any one of 1-12, it is characterised in thatThe material of at least two sandwich layer is identical, or the material of at least two sandwich layer is different.
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