CN106684238B - An electrode lead device and method for a two-dimensional array ultrasonic transducer - Google Patents

Abstract

The invention discloses an electrode lead device and method for a two-dimensional array ultrasonic transducer. layer, the upper layer of the first common electrode isolation layer is connected to the lower layer of the piezoelectric wafer, the upper layer of the piezoelectric wafer is connected to the lower layer of the second common electrode isolation layer, the electrode body is provided with a backing, the backing is embedded with lead pins, lead wires The pins are arranged on the upper layer of the second common electrode isolation layer. The above-mentioned technical scheme provides an electrode lead device and method for a two-dimensional array ultrasonic transducer, which is suitable for two-dimensional array ultrasonic transducers of different frequencies, ensures the consistency of the array elements, and improves the efficiency of the two-dimensional array ultrasonic transducer. Energy yield and production efficiency. Moreover, the transducer has good stability and is suitable for mass production.

Description

An electrode lead device and method for a two-dimensional array ultrasonic transducer

technical field

The invention relates to a piezoelectric ultrasonic transducer, in particular to an electrode lead device and method for a two-dimensional array ultrasonic transducer.

Background technique

Two-dimensional array ultrasonic transducers currently have two arrangements. One is to divide the same surface of the piezoelectric wafer into M×N electrodes in both vertical and horizontal directions, and the other side is used as a common electrode to form a total of M array elements. ×N two-dimensional array; the other is to divide one side of the piezoelectric chip into M electrodes vertically, and the other side into N electrodes horizontally, and then glue virtual common electrodes on each side of the piezoelectric chip to form a total array element. The number of two-dimensional arrays is M×N. Compared with the first method, the advantage of this method is that the leads of the two-dimensional array of M×N array elements are changed from M×N to M+N, which greatly reduces the number of leads. This is a feasible solution, but the existing electrode lead method is generally welding or bonding flexible circuit board (FPC), but there are certain problems in both methods.

1. The welding method is not suitable for ultrasonic transducers with higher frequencies, such as 15MHz ultrasonic transducers, whose piezoelectric wafer thickness is only 0.1mm. During the welding process, the piezoelectric wafer is easily depolarized and fails.

2. The welding method is not suitable for ultrasonic transducers with an element spacing of less than 0.3mm, such as an array element with a length and width of 0.3mm, but the diameter of the smaller solder joints is close to 0.3mm. If there are some large solder joints in the Piezoelectric wafer surface, its performance will drop sharply.

Although the method of bonding FPC solves the problem of welding, for high-frequency probes, the thickness of the front-end FPC is less than a quarter wavelength, such as a 15MHz ultrasonic transducer, and the ultrasonic wave passes through the FPC, and its quarter wavelength It is about 0.05mm, and the thickness of the thinnest FPC is about 0.1mm. The thickness of FPC will also affect the performance of the ultrasonic transducer.

Contents of the invention

In order to solve the above problems, the present invention provides an electrode lead device and method for a two-dimensional array ultrasonic transducer, which ensures the consistency of the array elements, improves the yield and production efficiency of the two-dimensional array ultrasonic transducer, and is suitable for Ultrasonic transducers of different frequencies.

An electrode lead device of a two-dimensional array ultrasonic transducer in the present invention includes an electrode body, a lead pin and a backing, and the electrode body includes a first common electrode isolation layer, a piezoelectric wafer, and a second common electrode isolation layer. layer, the upper layer of the first common electrode isolation layer is connected to the lower layer of the piezoelectric wafer, the upper layer of the piezoelectric wafer is connected to the lower layer of the second common electrode isolation layer, the electrode body is provided with a backing, and the backing Lead pins are embedded inside, and the lead pins are arranged on the upper layer of the second common electrode isolation layer.

In the above solution, the lead wire pins include a first lead wire pin, a second lead wire pin and a third lead wire pin, the first lead wire pins are arranged on four corners, and the second lead wire pins It is arranged on the front and back of the upper layer of the second common electrode isolation layer, and the third lead pin is arranged on the left and right sides of the upper layer of the second common electrode isolation layer.

In the above solution, the material of the first common electrode isolation layer, the piezoelectric wafer and the second common electrode isolation layer in the electrode body is one of nickel, nickel-chromium alloy and gold.

An electrode lead method for a two-dimensional array ultrasonic transducer, characterized in that it comprises the following steps:

S1: Prepare a rectangular parallelepiped piezoelectric chip, assuming that the length of the edge parallel to the X-axis of the piezoelectric chip is L+2c, the length of the edge parallel to the Y-axis is W, and the length of the edge parallel to the Z-axis is T;

S2: A layer of electrodes is plated on the upper and lower surfaces of the piezoelectric wafer, the front, rear, left, and right sides, and the electrodes on the six surfaces of the rectangular parallelepiped piezoelectric wafer are all turned on;

S3: Cut the electrode-plated piezoelectric wafer along the Y-axis direction, remove the two ends of the X-axis direction with a length of c, and remove the piezoelectric wafer with no electrodes on the two sides parallel to the Z-Y plane, and obtain the piezoelectric wafer along the The length of the edge along the X axis is L, and the length of the edge along the Y axis is W;

S4: Divide the left and right side electrodes of the piezoelectric chip to obtain 2M second electrodes, the distance between the centers of the adjacent electrodes of the 2M second electrodes is a, and simultaneously obtain 4 first electrodes with a width d;

S5: Divide the electrodes on the lower surface of the piezoelectric wafer to obtain M fourth electrodes, the distance between the centers of adjacent electrodes of the M fourth electrodes is a, and simultaneously obtain two third electrodes with a width d;

S6: Divide the electrodes on the upper surface of the piezoelectric wafer to obtain 2M sixth electrodes. The distance between the centers of the adjacent electrodes is b, and four fifth electrodes whose length and width are d are obtained by dividing at the same time;

S7: Prepare the first common electrode isolation layer and the second common electrode isolation layer with the same length and width as the piezoelectric wafer, and plate the upper and lower surfaces, front, rear, left, and right sides of the first common electrode isolation layer and the second common electrode isolation layer The upper layer of electrodes forms all the electrodes on the six surfaces;

S8: Divide the front, rear, left, and right side electrodes of the first common electrode isolation layer to obtain 8 eighth electrodes whose length and width are both d; at the same time obtain 4 second electrodeless regions with a width T;

S9: Divide the electrode on the lower surface of the first common electrode isolation layer to obtain four ninth electrodes whose length and width are d; at the same time obtain the tenth electrode in the central electrode area, the tenth electrode is connected to the four ninth electrodes, At the same time, the third non-electrode region on the edge is obtained;

S10: Divide the upper surface electrode of the first common electrode isolation layer to obtain four eleventh electrodes whose length and width are d at the end corners, and the other regions are the fourth electrodeless regions;

S11: Divide the front, rear, left, and right side electrodes of the second common electrode isolation layer to obtain 8 twelfth electrodes with a length and width of d, obtain 2M fourteenth electrodes with a width of a, and obtain 2N electrodes with a width of b at the same time The thirteenth electrode;

S12: Divide the electrode on the lower surface of the second common electrode isolation layer to obtain 4 fifteenth electrodes, the length and width of the 4 fifteenth electrodes are d, and obtain 2M seventeenth electrodes at the same time, the The distance between the centers of the adjacent electrodes of the seventeenth electrodes is a and the width is d, and 2N thirteenth electrodes are obtained at the same time. electrode area;

S13: Divide the upper surface electrode of the second common electrode isolation layer to obtain 4 electrodes, the length and width of the 4 eighteenth electrodes are both d, and at the same time obtain the 21st electrode in the central electrode area, the 21st electrode in the central electrode area The twenty-first electrodes are connected with the four eighteenth electrodes, and 2M twenty-first electrodes are obtained at the same time. Nine electrodes, the distance between the centers of adjacent electrodes of the 2N nineteenth electrodes is b, and the width is d;

S14: Prepare the backing inlaid with lead pins, the second lead pins are provided with M pieces, and the third lead pins are provided with N pieces;

S15: The upper layer of the first common electrode isolation layer is connected to the lower layer of the piezoelectric wafer, the upper layer of the piezoelectric wafer is connected to the lower layer of the second common electrode isolation layer, and the upper layer of the second common electrode isolation layer is connected to the backing, completing M The electrodes of the two-dimensional array ultrasonic transducer with ×N array elements are connected.

The advantages and beneficial effects of the present invention are: the present invention provides an electrode lead device and method for a two-dimensional array ultrasonic transducer, which is suitable for two-dimensional array ultrasonic transducers of different frequencies, ensures the consistency of the array elements, improves The yield and manufacturing efficiency of the two-dimensional array ultrasonic transducer are improved. Moreover, the transducer has good stability and is suitable for mass production.

Description of drawings

In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only These are some embodiments of the present invention. For those skilled in the art, other drawings can also be obtained according to these drawings without any creative effort.

Fig. 1 is a structural representation of the present invention;

Fig. 2 is the structural representation of piezoelectric chip;

Fig. 3 is the segmentation schematic diagram of piezoelectric chip;

FIG. 4 is a schematic diagram of division of the first common electrode isolation layer;

FIG. 5 is a schematic diagram of division of a second common electrode isolation layer;

Figure 6 is a schematic diagram of the structure of the backing.

In the figure: 1. The first common electrode isolation layer 101, the eighth electrode 102, the second electrodeless area 103, the ninth electrode 104, the third electrodeless area 105, the tenth electrode 106, the eleventh electrode 107, the fourth Electrode free area

2. Piezoelectric chip 201, first electrode 202, second electrode 203, first electrodeless area 204, third electrode 205, fourth electrode 206, fifth electrode 207, sixth electrode 208, seventh electrode 209, sixth electrode a separation slot

3. The second common electrode isolation layer 301, the twelfth electrode 302, the thirteenth electrode 303, the fourteenth electrode 304, the fifteenth electrode 305, the sixteenth electrode 306, the seventeenth electrode 307, and the fifth electrodeless Area 308, eighteenth electrode 309, nineteenth electrode 3010, twentieth electrode 3011, twenty-first electrode 3012, second separation groove

4. Backing 5. Lead pin 501, first lead pin 502, second lead pin 503, third lead pin

Detailed ways

The specific implementation manners of the present invention will be further described below in conjunction with the drawings and examples. The following examples are only used to illustrate the technical solution of the present invention more clearly, but not to limit the protection scope of the present invention.

As shown in Figure 1, the present invention is an electrode lead device of a two-dimensional array ultrasonic transducer, comprising an electrode body, a lead pin 5 and a backing 4, and the electrode body includes a first common electrode isolation layer 1, a piezoelectric wafer 2 and the second common electrode isolation layer 3, the upper layer of the first common electrode isolation layer 1 is connected to the lower layer of the piezoelectric wafer 2, the upper layer of the piezoelectric wafer 2 is connected to the lower layer of the second common electrode isolation layer 3, and the electrode body is provided with a back The backing 4 and the backing 4 are embedded with lead pins 5 , and the lead pins 5 are arranged on the upper layer of the second common electrode isolation layer 3 . Wherein, the lead wire pin 5 comprises a first lead wire pin 501, a second lead wire pin 502 and a third lead wire pin 503, the first lead wire pin 501 is arranged on four corners, and the second lead wire pin 502 is located on On the front and back of the upper layer of the second common electrode isolation layer 3 , the third lead pins 503 are arranged on the left and right sides of the upper layer of the second common electrode isolation layer 3 . Preferably, the material of the first common electrode isolation layer 1 , the piezoelectric wafer 2 and the second common electrode isolation layer 3 in the electrode body is one of nickel, nickel-chromium alloy and gold.

An electrode lead method for a two-dimensional array ultrasonic transducer, comprising the following steps:

S1: As shown in accompanying drawing 2 (1), prepare the rectangular parallelepiped piezoelectric chip, set the length of the edge parallel to the X axis of the piezoelectric chip 2 to be L+2c, L≥2.0mm, 0.1mm≤c≤1.0mm, The lengths of the ribs parallel to the Y axis are all W, W≥2.0mm, and the lengths of the ribs parallel to the Z axis are all T, T≥0.01mm.

S2: A layer of electrodes is plated on the upper and lower surfaces and four sides of the piezoelectric wafer 2 to form electrodes on the six sides of the rectangular parallelepiped piezoelectric wafer. The electrode material is gold, and the electrode thickness is 300nm to 800nm.

S3: As shown in accompanying drawing 2 (2), cut the piezoelectric wafer that has plated electrodes along the Y axis, and remove the two ends along the X axis with a length of c, and obtain the piezoelectric wafer as shown in accompanying drawing 2 (3). The length of the edge of the transistor along the X-axis is L, and the length of the edge along the Y-axis is W.

S4: Divide the left and right side electrodes of the piezoelectric chip by etching or laser cutting according to Fig. 3 (1). The distance between the centers of adjacent electrodes in the second electrodes 202 is a, where a≥0.05mm, there are 2M second electrodes 202 with M≥4, and the width of each of the first electrodes 201 is d, and the width is 0.3mm≤d≤1.0mm. There is a first dividing groove 209 between adjacent electrodes of the second electrode 202 . The width of the first dividing groove 209 is one tenth of a. The front and rear sides of the piezoelectric wafer are the first electrodeless regions 203 .

S5: Divide the bottom surface electrode of the piezoelectric wafer according to Fig. 3 (2) by etching or laser cutting method. The middle width of the third electrode 204 is d, the distance between adjacent electrodes in the fourth electrode 205 is a, the width a≥0.05mm, the fourth electrode 205 has M pieces in total, and there is a first dividing groove 209 between the adjacent electrodes of the fourth electrode 205 .

S6: Divide the upper surface electrode of the piezoelectric wafer according to Fig. 3 (3) by etching or laser cutting. The length and width of the fifth electrode 206 are d, and the distance between adjacent electrodes in the sixth electrode 207 is a. There are 2M sixth electrodes 207 in total, and the sixth electrode 207 communicates with the fourth electrode 205 through the second electrode 202 . The distance between the centers of adjacent electrodes in the seventh electrode 208 is b, b≧0.05mm, and there are N seventh electrodes 208, and N≧4. There is a first dividing groove 209 between adjacent electrodes of the seventh electrode 208 .

S7: Prepare the first common electrode isolation layer 1 and the second common electrode isolation layer 2 with the same length and width as the piezoelectric wafer 2, on the upper and lower surfaces of the first common electrode isolation layer 1 and the second common electrode isolation layer 2, four A layer of electrodes is plated on the sides to form all electrodes on the six surfaces. The electrode material is gold, and the electrode thickness is 300nm to 800nm.

S8: Using the etching method to divide the front, rear, left, and right side electrodes of the first common electrode isolation layer according to FIG. 4(1). The length and width of the eighth electrode 101 are both d, and the second electrodeless region 102 is beside it.

S9: Divide the lower surface electrode of the first common electrode isolation layer by etching according to FIG. 4(2). The length and width of the ninth electrode 103 are respectively d, and the tenth electrode 105 communicates with the ninth electrode 103 and has a third electrodeless region 104 .

S10: Using an etching method to divide the upper surface electrode of the first common electrode isolation layer according to FIG. 4(3). The length and width of the eleventh electrode 106 are respectively d, and the eleventh electrode 106 communicates with the ninth electrode 103 and the tenth electrode 105 through the eighth electrode 101 . A fourth electrodeless region 107 is provided in the middle.

S11: Use the etching method to divide the front, rear, left, and right side electrodes of the second common electrode isolation layer according to the accompanying drawing 5 (1). The length and width of the twelfth electrode 301 are both d, and the distance between the centers of adjacent electrodes in the thirteenth electrode 302 is b, there are 2N thirteenth electrodes 302 in total, the distance between adjacent electrodes in the fourteenth electrodes 303 is a, there are 2M fourteenth electrodes 303 in total, and second dividing grooves 3012 are provided between the fourteenth electrodes 303 .

S12: Use the etching method to divide the electrodes on the lower surface of the second common electrode isolation layer according to Figure 5 (2). The length and width of the fifteenth electrode 304 are both d, and the distance between the centers of adjacent electrodes in the sixteenth electrode 305 is b. The thirteenth electrodes 302 have a total of 2N, the distance between the centers of adjacent electrodes in the seventeenth electrodes 306 is a, the seventeenth electrodes 306 have a total of 2M, the seventeenth electrodes 306 are provided with a second dividing groove 3012, and the center is provided with a fifth No electrode area 307 .

S13: Divide the electrodes on the upper surface of the second common electrode isolation layer by etching according to FIG. 5(3). The length and width of the eighteenth electrode 308 are both d, and the twenty-first electrode 3011 is connected to the eighteenth electrode 308 . The distance between the centers of adjacent electrodes in the nineteenth electrodes 309 is b, the nineteenth electrodes 309 have a total of 2N, the distance between the centers of adjacent electrodes in the twentieth electrodes 3010 is a, and the twentieth electrodes 3010 have a total of 2M. 3010 is provided with a second dividing groove 3012 , the nineteenth electrode 309 communicates with the sixteenth electrode 305 through the thirteenth electrode 302 , and the twentieth electrode 3010 communicates with the seventeenth electrode 306 through the fourteenth electrode 303 .

S14: As shown in Figure 6, the backing 4 is pre-embedded with lead pins, the four first lead pins 501 are common electrode leads, the M lead pins are the second lead pins 502, and the front and rear directions are staggered Arranged, the N lead pins are the third lead pins 503, which are arranged alternately in the left and right directions.

S15: As shown in Figure 1, the upper surface of the first common electrode isolation layer 1 is bonded to the lower surface of the piezoelectric wafer 2, and the upper surface of the piezoelectric wafer 2 is bonded to the lower surface of the second common electrode isolation layer 3. The upper surface of the two common electrode isolation layers 3 is bonded to the backing 4 to complete the electrode connection of the two-dimensional array ultrasonic transducer with M×N array elements.

The listed embodiments of the present invention are only used to help understand the present invention, and should not be construed as limiting the protection scope of the present invention. In order to facilitate the description of the present invention, the orientation of each component is agreed, the "upper surface" is a plane formed parallel to the X-Y axis, close to the positive direction of the Z-axis; the "lower surface" is formed parallel to the X-Y axis The plane, close to the Z-axis direction; the "front side" is a plane formed parallel to the Z-Y axis, close to the positive direction of the X-axis; the "rear side" is a plane formed parallel to the Z-Y axis, close to the X-axis Negative direction; the "left side" is a plane formed parallel to the Z-X axis, close to the negative direction of the Y-axis; the "right side" is a plane formed parallel to the Z-X axis, close to the positive direction of the Y-axis. It should be understood that the orientations or positional relationships indicated by "upper surface", "lower surface", "front side", "rear side", "left side" and "right side" are based on the orientations or positional relationships shown in the drawings, It is only for the convenience of describing the present invention and simplifying the description, but does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention.

The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included in the scope of the present invention. within the scope of protection.

Claims (1)

1. An electrode lead method of a two-dimensional array ultrasonic transducer is characterized by comprising the following steps:

s1: preparing a cuboid piezoelectric wafer, wherein the lengths of edges of the piezoelectric wafer parallel to the X axis are L+2c, the lengths of edges parallel to the Y axis are W, and the lengths of edges parallel to the Z axis are T;

s2: plating a layer of electrodes on the upper and lower surfaces, front, back, left and right sides of the piezoelectric wafer to form all the conduction of six electrodes of the cuboid piezoelectric wafer;

s3: cutting the piezoelectric wafer with the plated electrodes along the Y-axis direction, removing the lengths of the two ends along the X-axis direction to obtain a piezoelectric wafer with the two side surfaces parallel to the Z-Y plane without electrodes, wherein the length of the obtained piezoelectric wafer along the X-axis edge is L, and the length of the obtained piezoelectric wafer along the Y-axis edge is W;

s4: dividing left and right side electrodes of the piezoelectric wafer to obtain 2M second electrodes, wherein the center distance between adjacent electrodes of the 2M second electrodes is a, and 4 first electrodes with the width d are obtained;

s5: dividing the electrode on the lower surface of the piezoelectric wafer to obtain M fourth electrodes, wherein the center distance between the adjacent electrodes of the M fourth electrodes is a, and simultaneously obtaining 2 third electrodes with the width d;

s6: dividing the upper surface electrode of the piezoelectric wafer to obtain 2M sixth electrodes, wherein the center-to-center distance between the adjacent electrodes of the 2M sixth electrodes is a, simultaneously dividing the electrodes to obtain N seventh electrodes, the center-to-center distance between the adjacent electrodes of the N seventh electrodes is b, and simultaneously dividing the electrodes to obtain 4 fifth electrodes with the length and the width of d;

s7: preparing a first public electrode isolation layer and a second public electrode isolation layer which have the same length and width as the piezoelectric wafer, and plating a layer of electrode on the upper surface, the lower surface, the front surface, the rear surface, the left surface and the right surface of the first public electrode isolation layer and the second public electrode isolation layer to form six surface electrodes to be fully conducted;

s8: dividing the front, back, left and right side electrodes of the first public electrode isolating layer to obtain 8 eighth electrodes with length and width d; simultaneously obtaining 4 second electrodeless areas with the width T;

s9: dividing the lower surface electrode of the first public electrode isolating layer to obtain 4 ninth electrodes with the length and the width of d; simultaneously obtaining a tenth electrode in the central electrode area, wherein the tenth electrode is communicated with the 4 ninth electrodes, and simultaneously obtaining a third electrode-free area at the edge;

s10: dividing the electrode on the upper surface of the first public electrode isolating layer to obtain an eleventh electrode with the length and width of d at the end angle of 4 strips, wherein the other areas are fourth electrodeless areas;

s11: dividing the front, back, left and right side electrodes of the second public electrode isolating layer to obtain 8 twelfth electrodes with the length and the width of d, wherein the center distance between adjacent electrodes in the thirteenth electrode is b, the thirteenth electrode is 2N, the center distance between adjacent electrodes in the fourteenth electrode is a, and the fourteenth electrode is 2M;

s12: dividing the lower surface electrode of the second public electrode isolation layer to obtain 4 fifteenth electrodes, wherein the length and the width of the 4 fifteenth electrodes are d, 2M seventeenth electrodes are obtained simultaneously, the center distance between the adjacent electrodes of the 2M seventeenth electrodes is a, the width is d, 2N sixteenth electrodes are obtained simultaneously, the center distance between the adjacent electrodes of the 2N sixteenth electrodes is b, the width is d, and a central fifth electrodeless region is obtained simultaneously;

s13: dividing the upper surface electrode of a second public electrode isolation layer to obtain 4 electrodes, wherein the length and the width of the 4 eighteenth electrodes are d, simultaneously obtaining a twenty-first electrode of a central electrode area, the twenty-first electrode of the central electrode area is communicated with the 4 eighteenth electrodes, simultaneously obtaining 2M twentieth electrodes, the center distances between adjacent electrodes of the 2M twentieth electrodes are a, the widths are d, simultaneously obtaining 2N nineteenth electrodes, the center distances between adjacent electrodes of the 2N nineteenth electrodes are b, and the widths are d;

s14: preparing a backing inlaid with lead pins, wherein M second lead pins are arranged, and N third lead pins are arranged;

s15: the upper layer of the first public electrode isolation layer is connected with the lower layer of the piezoelectric wafer, the upper layer of the piezoelectric wafer is connected with the lower layer of the second public electrode isolation layer, and the upper layer of the second public electrode isolation layer is connected with the backing, so that the electrode connection of the two-dimensional array ultrasonic transducer of M multiplied by N array elements is completed.

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