CN106684238B - An electrode lead device and method for a two-dimensional array ultrasonic transducer - Google Patents
An electrode lead device and method for a two-dimensional array ultrasonic transducer Download PDFInfo
- Publication number
- CN106684238B CN106684238B CN201710119036.5A CN201710119036A CN106684238B CN 106684238 B CN106684238 B CN 106684238B CN 201710119036 A CN201710119036 A CN 201710119036A CN 106684238 B CN106684238 B CN 106684238B
- Authority
- CN
- China
- Prior art keywords
- electrodes
- electrode
- width
- layer
- piezoelectric wafer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/875—Further connection or lead arrangements, e.g. flexible wiring boards, terminal pins
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Ultra Sonic Daignosis Equipment (AREA)
Abstract
本发明公开了一种二维阵列超声换能器的电极引线装置及方法,包括电极本体、引线插针和背衬,电极本体包括第一公共电极隔离层、压电晶片和第二公共电极隔离层,第一公共电极隔离层的上层连接压电晶片的下层,压电晶片的上层连接第二公共电极隔离层的下层,电极本体上设有背衬,背衬内镶嵌有引线插针,引线插针设于第二公共电极隔离层的上层上。采用上述技术方案提供了一种二维阵列超声换能器的电极引线装置及方法,适用于不同频率的二维阵列超声换能器,保证了阵元的一致性,提高了二维阵列超声换能器的成品率和制作效率。而且换能器的稳定性好,适合批量化生产。
The invention discloses an electrode lead device and method for a two-dimensional array ultrasonic transducer. layer, the upper layer of the first common electrode isolation layer is connected to the lower layer of the piezoelectric wafer, the upper layer of the piezoelectric wafer is connected to the lower layer of the second common electrode isolation layer, the electrode body is provided with a backing, the backing is embedded with lead pins, lead wires The pins are arranged on the upper layer of the second common electrode isolation layer. The above-mentioned technical scheme provides an electrode lead device and method for a two-dimensional array ultrasonic transducer, which is suitable for two-dimensional array ultrasonic transducers of different frequencies, ensures the consistency of the array elements, and improves the efficiency of the two-dimensional array ultrasonic transducer. Energy yield and production efficiency. Moreover, the transducer has good stability and is suitable for mass production.
Description
技术领域technical field
本发明涉及压电超声换能器,特别涉及一种二维阵列超声换能器的电极引线装置及方法。The invention relates to a piezoelectric ultrasonic transducer, in particular to an electrode lead device and method for a two-dimensional array ultrasonic transducer.
背景技术Background technique
二维阵列超声换能器目前有两种排列方式,一种是在压电晶片的同一面上纵横两个方向分割成M×N个电极,另一面作为公共电极,形成阵元总数量为M×N的二维阵列;另一种是在压电晶片一面纵向分割成M个电极,另一面横向分割成N个电极,再在压电晶片的每一面粘接虚拟公共电极,形成阵元总数量为M×N的二维阵列,此种方法相对于第一种方法的优点是把M×N个阵元的二维阵列引线从M×N个变为M+N个,大大减少了引线的数量,这是一种确实可行的解决方案,但现有电极引线方法一般为焊接或者粘接柔性线路板(FPC),但两种方法都存在一定的问题。Two-dimensional array ultrasonic transducers currently have two arrangements. One is to divide the same surface of the piezoelectric wafer into M×N electrodes in both vertical and horizontal directions, and the other side is used as a common electrode to form a total of M array elements. ×N two-dimensional array; the other is to divide one side of the piezoelectric chip into M electrodes vertically, and the other side into N electrodes horizontally, and then glue virtual common electrodes on each side of the piezoelectric chip to form a total array element. The number of two-dimensional arrays is M×N. Compared with the first method, the advantage of this method is that the leads of the two-dimensional array of M×N array elements are changed from M×N to M+N, which greatly reduces the number of leads. This is a feasible solution, but the existing electrode lead method is generally welding or bonding flexible circuit board (FPC), but there are certain problems in both methods.
1、焊接的方法不适用于频率较高的超声换能器,比如15MHz超声换能器,其压电晶片厚度只有0.1mm,在焊接过程中,压电晶片很容易去极化,产生失效。1. The welding method is not suitable for ultrasonic transducers with higher frequencies, such as 15MHz ultrasonic transducers, whose piezoelectric wafer thickness is only 0.1mm. During the welding process, the piezoelectric wafer is easily depolarized and fails.
2、焊接的方法不适于阵元间距小于0.3mm的超声换能器,比如长宽各为0.3mm的阵元,但较小的焊点直径都接近0.3mm,如果有如些大的焊点在压电晶片表面,其性能将急剧下降。2. The welding method is not suitable for ultrasonic transducers with an element spacing of less than 0.3mm, such as an array element with a length and width of 0.3mm, but the diameter of the smaller solder joints is close to 0.3mm. If there are some large solder joints in the Piezoelectric wafer surface, its performance will drop sharply.
采用粘接FPC的方式虽然解决了焊接的问题,但对于高频探头来说,前端FPC的厚度要小于四分之一波长,比如15MHz超声换能器,超声波通过FPC,其四分之一波长约为0.05mm,而现有最薄的FPC厚度约为0.1mm,FPC的厚度也将影响超声换能器的性能。Although the method of bonding FPC solves the problem of welding, for high-frequency probes, the thickness of the front-end FPC is less than a quarter wavelength, such as a 15MHz ultrasonic transducer, and the ultrasonic wave passes through the FPC, and its quarter wavelength It is about 0.05mm, and the thickness of the thinnest FPC is about 0.1mm. The thickness of FPC will also affect the performance of the ultrasonic transducer.
发明内容Contents of the invention
为了解决上述问题,本发明提供一种二维阵列超声换能器的电极引线装置及方法,保证了阵元的一致性,提高了二维阵列超声换能器的成品率和制作效率,适用于不同频率的超声换能器。In order to solve the above problems, the present invention provides an electrode lead device and method for a two-dimensional array ultrasonic transducer, which ensures the consistency of the array elements, improves the yield and production efficiency of the two-dimensional array ultrasonic transducer, and is suitable for Ultrasonic transducers of different frequencies.
本发明中的一种二维阵列超声换能器的电极引线装置,包括电极本体、引线插针和背衬,所述电极本体包括第一公共电极隔离层、压电晶片和第二公共电极隔离层,所述第一公共电极隔离层的上层连接压电晶片的下层,所述压电晶片的上层连接第二公共电极隔离层的下层,所述电极本体上设有背衬,所述背衬内镶嵌有引线插针,所述引线插针设于第二公共电极隔离层的上层上。An electrode lead device of a two-dimensional array ultrasonic transducer in the present invention includes an electrode body, a lead pin and a backing, and the electrode body includes a first common electrode isolation layer, a piezoelectric wafer, and a second common electrode isolation layer. layer, the upper layer of the first common electrode isolation layer is connected to the lower layer of the piezoelectric wafer, the upper layer of the piezoelectric wafer is connected to the lower layer of the second common electrode isolation layer, the electrode body is provided with a backing, and the backing Lead pins are embedded inside, and the lead pins are arranged on the upper layer of the second common electrode isolation layer.
上述方案中,所述引线插针包括第一引线插针、第二引线插针和第三引线插针,所述第一引线插针设于4个边角上,所述第二引线插针设于第二公共电极隔离层上层的前面和后面,所述第三引线插针设于第二公共电极隔离层上层的左面和右面。In the above solution, the lead wire pins include a first lead wire pin, a second lead wire pin and a third lead wire pin, the first lead wire pins are arranged on four corners, and the second lead wire pins It is arranged on the front and back of the upper layer of the second common electrode isolation layer, and the third lead pin is arranged on the left and right sides of the upper layer of the second common electrode isolation layer.
上述方案中,所述电极本体中的第一公共电极隔离层、压电晶片和第二公共电极隔离层的材料为镍、镍铬合金、金中的其中一种。In the above solution, the material of the first common electrode isolation layer, the piezoelectric wafer and the second common electrode isolation layer in the electrode body is one of nickel, nickel-chromium alloy and gold.
一种二维阵列超声换能器的电极引线方法,其特征在于,包括以下步骤:An electrode lead method for a two-dimensional array ultrasonic transducer, characterized in that it comprises the following steps:
S1:准备长方体压电晶片,设压电晶片平行于X轴的棱的长度均为L+2c,平行于Y轴的棱的长度均为W,平行于Z轴的棱的长度均为T;S1: Prepare a rectangular parallelepiped piezoelectric chip, assuming that the length of the edge parallel to the X-axis of the piezoelectric chip is L+2c, the length of the edge parallel to the Y-axis is W, and the length of the edge parallel to the Z-axis is T;
S2:在压电晶片上下表面、前后左右四个侧面都镀上一层电极,形成长方体压电晶片的六个面电极全部导通;S2: A layer of electrodes is plated on the upper and lower surfaces of the piezoelectric wafer, the front, rear, left, and right sides, and the electrodes on the six surfaces of the rectangular parallelepiped piezoelectric wafer are all turned on;
S3:沿Y轴方向切割已镀电极的压电晶片,去除两端沿X轴方向长度各为c,得到去除平行于Z-Y平面的两个侧面无电极的压电晶片,得到的压电晶片沿X轴的棱的长度为L,沿Y轴的棱的长度为W;S3: Cut the electrode-plated piezoelectric wafer along the Y-axis direction, remove the two ends of the X-axis direction with a length of c, and remove the piezoelectric wafer with no electrodes on the two sides parallel to the Z-Y plane, and obtain the piezoelectric wafer along the The length of the edge along the X axis is L, and the length of the edge along the Y axis is W;
S4:分割压电晶片左右两个侧面电极,分割得到2M条第二电极,所述2M条第二电极相临电极中心间距为a,同时得到4条宽度为d的第一电极;S4: Divide the left and right side electrodes of the piezoelectric chip to obtain 2M second electrodes, the distance between the centers of the adjacent electrodes of the 2M second electrodes is a, and simultaneously obtain 4 first electrodes with a width d;
S5:分割压电晶片下表面电极,分割得到M条第四电极,所述M条第四电极相临电极中心间距为a,同时得到2条宽度为d的第三电极;S5: Divide the electrodes on the lower surface of the piezoelectric wafer to obtain M fourth electrodes, the distance between the centers of adjacent electrodes of the M fourth electrodes is a, and simultaneously obtain two third electrodes with a width d;
S6:分割压电晶片上表面电极,分割得到2M条第六电极,所述2M条第六电极相临电极中心间距为a,同时分割得到N条第七电极,所述N条第七电极相临电极中心间距为b,同时分割得到4条长宽为d的第五电极;S6: Divide the electrodes on the upper surface of the piezoelectric wafer to obtain 2M sixth electrodes. The distance between the centers of the adjacent electrodes is b, and four fifth electrodes whose length and width are d are obtained by dividing at the same time;
S7:准备与压电晶片同等长度宽度的第一公共电极隔离层及第二公共电极隔离层,在第一公共电极隔离层及第二公共电极隔离层的上下表面、前后左右四个侧面都镀上一层电极,形成六个面电极全部导通;S7: Prepare the first common electrode isolation layer and the second common electrode isolation layer with the same length and width as the piezoelectric wafer, and plate the upper and lower surfaces, front, rear, left, and right sides of the first common electrode isolation layer and the second common electrode isolation layer The upper layer of electrodes forms all the electrodes on the six surfaces;
S8:分割第一公共电极隔离层前后左右四个侧面电极,分割得到8条长宽均为d的第八电极;同时得到4条宽度为T的第二无电极区域;S8: Divide the front, rear, left, and right side electrodes of the first common electrode isolation layer to obtain 8 eighth electrodes whose length and width are both d; at the same time obtain 4 second electrodeless regions with a width T;
S9:分割第一公共电极隔离层下表面电极,分割得到4条长宽为d的第九电极;同时得到中央电极区域第十电极,所述第十电极与所述4条第九电极连通,同时得到边缘第三无电极区域;S9: Divide the electrode on the lower surface of the first common electrode isolation layer to obtain four ninth electrodes whose length and width are d; at the same time obtain the tenth electrode in the central electrode area, the tenth electrode is connected to the four ninth electrodes, At the same time, the third non-electrode region on the edge is obtained;
S10:分割第一公共电极隔离层上表面电极,得到端角4条长宽为d的第十一电极,其它区域为第四无电极区域;S10: Divide the upper surface electrode of the first common electrode isolation layer to obtain four eleventh electrodes whose length and width are d at the end corners, and the other regions are the fourth electrodeless regions;
S11:分割第二公共电极隔离层前后左右四个侧面电极,分割得到8条长宽为d的第十二电极,同时得到2M条宽度为a的第十四电极,同时得到2N条宽度为b的第十三电极;S11: Divide the front, rear, left, and right side electrodes of the second common electrode isolation layer to obtain 8 twelfth electrodes with a length and width of d, obtain 2M fourteenth electrodes with a width of a, and obtain 2N electrodes with a width of b at the same time The thirteenth electrode;
S12:分割第二公共电极隔离层下表面电极,分割得到4条第十五电极,所述4条第十五电极长宽均为d,同时得到2M条第十七电极,所述2M条第十七电极相临电极中心间距为a,宽度为d,同时得到2N条第十三电极,所述2N条第十三电极相临电极中心间距为b,宽度为d,同时得到中央第五无电极区域;S12: Divide the electrode on the lower surface of the second common electrode isolation layer to obtain 4 fifteenth electrodes, the length and width of the 4 fifteenth electrodes are d, and obtain 2M seventeenth electrodes at the same time, the The distance between the centers of the adjacent electrodes of the seventeenth electrodes is a and the width is d, and 2N thirteenth electrodes are obtained at the same time. electrode area;
S13:分割第二公共电极隔离层上表面电极,分割得到4条电极,所述4条第十八电极长宽均为d,同时得到中央电极区域第二十一电极,所述中央电极区域第二十一电极与所述4条第十八电极连通,同时得到2M条第二十电极,所述2M条第二十电极相临电极中心间距为a,宽度为d,同时得到2N条第十九电极,所述2N条第十九电极相临电极中心间距为b,宽度为d;S13: Divide the upper surface electrode of the second common electrode isolation layer to obtain 4 electrodes, the length and width of the 4 eighteenth electrodes are both d, and at the same time obtain the 21st electrode in the central electrode area, the 21st electrode in the central electrode area The twenty-first electrodes are connected with the four eighteenth electrodes, and 2M twenty-first electrodes are obtained at the same time. Nine electrodes, the distance between the centers of adjacent electrodes of the 2N nineteenth electrodes is b, and the width is d;
S14:准备镶嵌有引线插针背衬,所述第二引线插针设有M条,所述第三引线插针设有N条;S14: Prepare the backing inlaid with lead pins, the second lead pins are provided with M pieces, and the third lead pins are provided with N pieces;
S15:第一公共电极隔离层的上层连接压电晶片的下层,所述压电晶片的上层连接第二公共电极隔离层的下层,所述第二公共电极隔离层的上层连接背衬,完成M×N个阵元的二维阵列超声换能器的电极连接。S15: The upper layer of the first common electrode isolation layer is connected to the lower layer of the piezoelectric wafer, the upper layer of the piezoelectric wafer is connected to the lower layer of the second common electrode isolation layer, and the upper layer of the second common electrode isolation layer is connected to the backing, completing M The electrodes of the two-dimensional array ultrasonic transducer with ×N array elements are connected.
本发明的优点和有益效果在于:本发明提供一种二维阵列超声换能器的电极引线装置及方法,适用于不同频率的二维阵列超声换能器,保证了阵元的一致性,提高了二维阵列超声换能器的成品率和制作效率。而且换能器的稳定性好,适合批量化生产。The advantages and beneficial effects of the present invention are: the present invention provides an electrode lead device and method for a two-dimensional array ultrasonic transducer, which is suitable for two-dimensional array ultrasonic transducers of different frequencies, ensures the consistency of the array elements, improves The yield and manufacturing efficiency of the two-dimensional array ultrasonic transducer are improved. Moreover, the transducer has good stability and is suitable for mass production.
附图说明Description of drawings
为了更清楚地说明本发明实施例或现有技术中的技术方案,下面将对实施例或现有技术描述中所需要使用的附图作简单地介绍,显而易见地,下面描述中的附图仅仅是本发明的一些实施例,对于本领域普通技术人员来讲,在不付出创造性劳动性的前提下,还可以根据这些附图获得其他的附图。In order to more clearly illustrate the technical solutions in the embodiments of the present invention or the prior art, the following will briefly introduce the drawings that need to be used in the description of the embodiments or the prior art. Obviously, the accompanying drawings in the following description are only These are some embodiments of the present invention. For those skilled in the art, other drawings can also be obtained according to these drawings without any creative effort.
图1为本发明的结构示意图;Fig. 1 is a structural representation of the present invention;
图2为压电晶片的结构示意图;Fig. 2 is the structural representation of piezoelectric chip;
图3为压电晶片的分割示意图;Fig. 3 is the segmentation schematic diagram of piezoelectric chip;
图4为第一公共电极隔离层的分割示意图;FIG. 4 is a schematic diagram of division of the first common electrode isolation layer;
图5为第二公共电极隔离层的分割示意图;FIG. 5 is a schematic diagram of division of a second common electrode isolation layer;
图6为背衬的结构示意图。Figure 6 is a schematic diagram of the structure of the backing.
图中:1、第一公共电极隔离层 101、第八电极 102、第二无电极区域 103、第九电极 104、第三无电极区域 105、第十电极 106、第十一电极 107、第四无电极区域In the figure: 1. The first common
2、压电晶片 201、第一电极 202、第二电极 203、第一无电极区域 204、第三电极205、第四电极 206、第五电极 207、第六电极 208、第七电极 209、第一分隔槽2.
3、第二公共电极隔离层 301、第十二电极 302、第十三电极 303、第十四电极304、第十五电极 305、第十六电极 306、第十七电极 307、第五无电极区域 308、第十八电极 309、第十九电极 3010、第二十电极 3011、第二十一电极 3012、第二分隔槽3. The second common
4、背衬 5、引线插针 501、第一引线插针 502、第二引线插针 503、第三引线插针4. Backing 5. Lead
具体实施方式Detailed ways
下面结合附图和实施例,对本发明的具体实施方式作进一步描述。以下实施例仅用于更加清楚地说明本发明的技术方案,而不能以此来限制本发明的保护范围。The specific implementation manners of the present invention will be further described below in conjunction with the drawings and examples. The following examples are only used to illustrate the technical solution of the present invention more clearly, but not to limit the protection scope of the present invention.
如图1所示,本发明是一种二维阵列超声换能器的电极引线装置,包括电极本体、引线插针5和背衬4,电极本体包括第一公共电极隔离层1、压电晶片2和第二公共电极隔离层3,第一公共电极隔离层1的上层连接压电晶片2的下层,压电晶片2的上层连接第二公共电极隔离层3的下层,电极本体上设有背衬4,背衬4内镶嵌有引线插针5,引线插针5设于第二公共电极隔离层3的上层上。其中,引线插针5包括第一引线插针501、第二引线插针502和第三引线插针503,第一引线插针501设于4个边角上,第二引线插针502设于第二公共电极隔离层3上层的前面和后面,第三引线插针503设于第二公共电极隔离层3上层的左面和右面。优选的,电极本体中的第一公共电极隔离层1、压电晶片2和第二公共电极隔离层3的材料为镍、镍铬合金、金中的其中一种。As shown in Figure 1, the present invention is an electrode lead device of a two-dimensional array ultrasonic transducer, comprising an electrode body, a
一种二维阵列超声换能器的电极引线方法,包括以下步骤:An electrode lead method for a two-dimensional array ultrasonic transducer, comprising the following steps:
S1:如附图2(1)所示,准备长方体压电晶片,设压电晶片2平行于X轴的棱的长度均为L+2c,L≥2.0mm,0.1mm≤c≤1.0mm,平行于Y轴的棱的长度均为W,W≥2.0mm,平行于Z轴的棱的长度均为T,T≥0.01mm。S1: As shown in accompanying drawing 2 (1), prepare the rectangular parallelepiped piezoelectric chip, set the length of the edge parallel to the X axis of the
S2:在压电晶片2上下表面、四个侧面都镀上一层电极,形成长方体压电晶片的六个面电极全部导通,其中电极材料为金,电极厚度为300nm至800nm。S2: A layer of electrodes is plated on the upper and lower surfaces and four sides of the
S3:如附图2(2)所示,沿Y轴切割已镀电极的压电晶片,去除两端沿X轴长度各为c,得到如附图2(3)所示压电晶片,压电晶片沿X轴的棱的长度为L,沿Y轴的棱的长度为W。S3: As shown in accompanying drawing 2 (2), cut the piezoelectric wafer that has plated electrodes along the Y axis, and remove the two ends along the X axis with a length of c, and obtain the piezoelectric wafer as shown in accompanying drawing 2 (3). The length of the edge of the transistor along the X-axis is L, and the length of the edge along the Y-axis is W.
S4:采用蚀刻或激光切割的方法按附图3(1)分割压电晶片左右两个侧面电极。第二电极202中相临电极中心间距为a,a≥0.05mm,第二电极202共有2M条所述M≥4,第一电极201宽度各为d,宽度0.3mm≤d≤1.0mm。第二电极202之相临电极间有第一分割槽209。第一分割槽209宽度为a的十分之一。压电晶片的前后两个侧面为第一无电极区域203。S4: Divide the left and right side electrodes of the piezoelectric chip by etching or laser cutting according to Fig. 3 (1). The distance between the centers of adjacent electrodes in the
S5:采用蚀刻或激光切割方法按附图3(2)分割压电晶片下表面电极。第三电极204中宽度为d,第四电极205中相临电极中心间距a,宽度a≥0.05mm,第四电极205共有M条,第四电极205之相临电极间有第一分割槽209。S5: Divide the bottom surface electrode of the piezoelectric wafer according to Fig. 3 (2) by etching or laser cutting method. The middle width of the
S6:采用蚀刻或激光切割的方法按附图3(3)分割压电晶片上表面电极。第五电极206的长度宽度分别为d,第六电极207中相临电极中心间距为a,第六电极207共有2M条,第六电极207通过第二电极202与第四电极205连通。第七电极208中相临电极中心间距为b,b≥0.05mm,第七电极208有N条,N≥4。第七电极208之相临电极间有第一分割槽209。S6: Divide the upper surface electrode of the piezoelectric wafer according to Fig. 3 (3) by etching or laser cutting. The length and width of the
S7:准备与压电晶片2同等长度宽度的第一公共电极隔离层1及第二公共电极隔离层2,在第一公共电极隔离层1及第二公共电极隔离层2的上下表面、四个侧面都镀上一层电极,形成六个面电极全部导通,其中电极材料为金,电极厚度为300nm至800nm。S7: Prepare the first common
S8:采用蚀刻的方法按附图4(1)分割第一公共电极隔离层前后左右四个侧面电极。第八电极101长宽均为d,旁边为第二无电极区域102。S8: Using the etching method to divide the front, rear, left, and right side electrodes of the first common electrode isolation layer according to FIG. 4(1). The length and width of the
S9:采用蚀刻的方法按附图4(2)分割第一公共电极隔离层下表面电极。第九电极103长宽各为d,第十电极105与第九电极103连通,并设有第三无电极区域104。S9: Divide the lower surface electrode of the first common electrode isolation layer by etching according to FIG. 4(2). The length and width of the
S10:采用蚀刻的方法按附图4(3)分割第一公共电极隔离层上表面电极。第十一电极106的长宽各为d,第十一电极106通过第八电极101与第九电极103、第十电极105连通。中间设有第四无电极区域107。S10: Using an etching method to divide the upper surface electrode of the first common electrode isolation layer according to FIG. 4(3). The length and width of the
S11:采用蚀刻的方法按附图5(1)分割第二公共电极隔离层前后左右四个侧面电极,第十二电极301长宽均为d,第十三电极302中相临电极中心间距为b,第十三电极302共有2N条,第十四电极303中相临电极中心间距为a,第十四电极303共有2M条,第十四电极303间设有第二分割槽3012。S11: Use the etching method to divide the front, rear, left, and right side electrodes of the second common electrode isolation layer according to the accompanying drawing 5 (1). The length and width of the
S12:采用蚀刻的方法按附图5(2)分割第二公共电极隔离层下表面电极,第十五电极304长宽均为d,第十六电极305中相临电极中心间距为b,第十三电极302共有2N条,第十七电极306中相临电极中心间距为a,第十七电极306共有2M条,第十七电极306间设有第二分割槽3012,中央设有第五无电极区域307。S12: Use the etching method to divide the electrodes on the lower surface of the second common electrode isolation layer according to Figure 5 (2). The length and width of the
S13:采用蚀刻的方法按附图5(3)分割第二公共电极隔离层上表面电极,第十八电极308长宽均为d,第二十一电极3011与第十八电极308连通。第十九电极309中相临电极中心间距为b,第十九电极309共有2N条,第二十电极3010中相临电极中心间距为a,第二十电极3010共有2M条,第二十电极3010间设有第二分割槽3012,第十九电极309通过第十三电极302与第十六电极305连通,第二十电极3010通过第十四电极303与第十七电极306连通。S13: Divide the electrodes on the upper surface of the second common electrode isolation layer by etching according to FIG. 5(3). The length and width of the
S14:如附图6所示,背衬4中预先镶嵌引线插针,4条第一引线插针501为公共电极引线,M条引线插针为第二引线插针502,前后两个方向交错排列,N条引线插针为第三引线插针503,左右两个方向交错排列。S14: As shown in Figure 6, the
S15:如附图1所示,第一公共电极隔离层1上表面与压电晶片2下表面进行粘接,压电晶片2上表面与第二公共电极隔离层3下表面进行粘接,第二公共电极隔离层3上表面与背衬4进行粘接,完成M×N个阵元的二维阵列超声换能器的电极连接。S15: As shown in Figure 1, the upper surface of the first common
本发明所列的实施例,只是用于帮助理解本发明,不应理解为对本发明保护范围的限定。为了便于描述本发明,对各部件的方位进行了约定,所述“上表面”为平行于X-Y轴所形成的平面,靠近Z轴正方向;所述“下表面”为平行于X-Y轴所形成的平面,靠近Z轴向方向;所述“前侧面”为平行于Z-Y轴所形成的平面,靠近X轴正方向;所述“后侧面”为平行于Z-Y轴所形成的平面,靠近X轴负方向;所述“左侧面”为平行于Z-X轴所形成的平面,靠近Y轴负方向;所述“右侧面”为平行于Z-X轴所形成的平面,靠近Y轴正方向。需要理解的是,“上表面”“下表面”“前侧面”“后侧面”“左侧面”“右侧面”等指示的方位或位置关系为基于附图所示的方位或位置关系,仅是为了便于描述本发明和简化描述,而不是指示或暗示所指的装置或元件必须具有特定的方位、以特定的方位构造和操作,因此不能理解为对本发明的限制。The listed embodiments of the present invention are only used to help understand the present invention, and should not be construed as limiting the protection scope of the present invention. In order to facilitate the description of the present invention, the orientation of each component is agreed, the "upper surface" is a plane formed parallel to the X-Y axis, close to the positive direction of the Z-axis; the "lower surface" is formed parallel to the X-Y axis The plane, close to the Z-axis direction; the "front side" is a plane formed parallel to the Z-Y axis, close to the positive direction of the X-axis; the "rear side" is a plane formed parallel to the Z-Y axis, close to the X-axis Negative direction; the "left side" is a plane formed parallel to the Z-X axis, close to the negative direction of the Y-axis; the "right side" is a plane formed parallel to the Z-X axis, close to the positive direction of the Y-axis. It should be understood that the orientations or positional relationships indicated by "upper surface", "lower surface", "front side", "rear side", "left side" and "right side" are based on the orientations or positional relationships shown in the drawings, It is only for the convenience of describing the present invention and simplifying the description, but does not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus should not be construed as limiting the present invention.
以上所述仅为本发明的较佳实施例而已,并不用以限制本发明,凡在本发明的精神和原则之内,所作的任何修改、等同替换、改进等,均应包含在本发明的保护范围之内。The above descriptions are only preferred embodiments of the present invention, and are not intended to limit the present invention. Any modifications, equivalent replacements, improvements, etc. made within the spirit and principles of the present invention shall be included in the scope of the present invention. within the scope of protection.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710119036.5A CN106684238B (en) | 2017-03-02 | 2017-03-02 | An electrode lead device and method for a two-dimensional array ultrasonic transducer |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201710119036.5A CN106684238B (en) | 2017-03-02 | 2017-03-02 | An electrode lead device and method for a two-dimensional array ultrasonic transducer |
Publications (2)
Publication Number | Publication Date |
---|---|
CN106684238A CN106684238A (en) | 2017-05-17 |
CN106684238B true CN106684238B (en) | 2023-05-09 |
Family
ID=58862382
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201710119036.5A Active CN106684238B (en) | 2017-03-02 | 2017-03-02 | An electrode lead device and method for a two-dimensional array ultrasonic transducer |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN106684238B (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
WO2020077638A1 (en) * | 2018-10-19 | 2020-04-23 | 深圳迈瑞生物医疗电子股份有限公司 | Backing block, ultrasonic probe, area-array ultrasonic probe, and ultrasonic diagnosis and imaging device |
CN112162168B (en) * | 2020-09-29 | 2022-08-16 | 上海船舶电子设备研究所(中国船舶重工集团公司第七二六研究所) | Signal extraction method and system of multi-channel high-frequency receiving transducer array |
Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63276400A (en) * | 1987-05-07 | 1988-11-14 | Fujitsu Ltd | Ultrasonic probe and its manufacturing method |
JPH07131895A (en) * | 1993-11-08 | 1995-05-19 | Toshiba Corp | Two-dimensional array type ultrasonic probe and its production |
CN102151150A (en) * | 2011-01-25 | 2011-08-17 | 古伦勇 | Two-dimensional array and three-dimensional imaging transducer and manufacturing method thereof |
CN102755176A (en) * | 2012-07-02 | 2012-10-31 | 华中科技大学 | Two-dimensional ultrasonic area array probe and manufacturing method thereof |
CN104586430A (en) * | 2015-01-19 | 2015-05-06 | 深圳市理邦精密仪器股份有限公司 | Ultrasonic probe and manufacturing method for ultrasonic probe |
CN105127082A (en) * | 2015-09-16 | 2015-12-09 | 深圳市理邦精密仪器股份有限公司 | Ultrasonic transducer and manufacturing method thereof |
CN105411623A (en) * | 2015-12-25 | 2016-03-23 | 中国科学院深圳先进技术研究院 | Two-dimensional area array ultrasonic transducer and manufacturing method thereof |
CN206602129U (en) * | 2017-03-02 | 2017-10-31 | 长沙芬贝电子科技有限公司 | A kind of contact conductor device of two dimensional array ultrasound transducer |
-
2017
- 2017-03-02 CN CN201710119036.5A patent/CN106684238B/en active Active
Patent Citations (8)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPS63276400A (en) * | 1987-05-07 | 1988-11-14 | Fujitsu Ltd | Ultrasonic probe and its manufacturing method |
JPH07131895A (en) * | 1993-11-08 | 1995-05-19 | Toshiba Corp | Two-dimensional array type ultrasonic probe and its production |
CN102151150A (en) * | 2011-01-25 | 2011-08-17 | 古伦勇 | Two-dimensional array and three-dimensional imaging transducer and manufacturing method thereof |
CN102755176A (en) * | 2012-07-02 | 2012-10-31 | 华中科技大学 | Two-dimensional ultrasonic area array probe and manufacturing method thereof |
CN104586430A (en) * | 2015-01-19 | 2015-05-06 | 深圳市理邦精密仪器股份有限公司 | Ultrasonic probe and manufacturing method for ultrasonic probe |
CN105127082A (en) * | 2015-09-16 | 2015-12-09 | 深圳市理邦精密仪器股份有限公司 | Ultrasonic transducer and manufacturing method thereof |
CN105411623A (en) * | 2015-12-25 | 2016-03-23 | 中国科学院深圳先进技术研究院 | Two-dimensional area array ultrasonic transducer and manufacturing method thereof |
CN206602129U (en) * | 2017-03-02 | 2017-10-31 | 长沙芬贝电子科技有限公司 | A kind of contact conductor device of two dimensional array ultrasound transducer |
Also Published As
Publication number | Publication date |
---|---|
CN106684238A (en) | 2017-05-17 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN105411623A (en) | Two-dimensional area array ultrasonic transducer and manufacturing method thereof | |
CN105127082B (en) | Ultrasonic transducer and preparation method thereof | |
CN106805994B (en) | Ultrasonic probe and preparation method thereof | |
US20030029010A1 (en) | Integrated connector backings for matrix array transducers, matrix array transducers employing such backings and methods of making the same | |
CN105170435B (en) | High-frequency transducer and preparation method thereof | |
CN104586430B (en) | Ultrasonic probe and manufacturing method for ultrasonic probe | |
CN111803125B (en) | Micro-array ultrasonic transducer and preparation method thereof, and ultrasonic probe containing the same | |
CN103155410A (en) | Piezoelectric vibration device | |
JP4519259B2 (en) | Two-dimensional array ultrasonic probe and manufacturing method thereof | |
CN105640588B (en) | The extensive ultrasonic plane array of deep brain stimulation and neuromodulation probe and preparation method thereof | |
US12138659B2 (en) | Planar phased ultrasound transducer array | |
CN212521818U (en) | Microarray ultrasonic transducer and ultrasonic probe comprising the same | |
CN106684238B (en) | An electrode lead device and method for a two-dimensional array ultrasonic transducer | |
WO2021093559A1 (en) | Ultrasonic probe, piezoelectric composite wafer and preparation method therefor | |
JP2009082612A (en) | Ultrasonic probe and piezoelectric transducer | |
CN105436065B (en) | A kind of preparation method of the ultrasonic face battle array probe of ranks addressing | |
CN106890783A (en) | One-Dimensional Ultrasonic phased array probe and preparation method based on PIN PMN PT ternary system piezoelectric monocrystalline | |
CN102527626B (en) | Ultrasonic probe and manufacturing method thereof | |
CN206602129U (en) | A kind of contact conductor device of two dimensional array ultrasound transducer | |
CN214766703U (en) | Array ultrasonic transducer | |
CN211534504U (en) | Area array transducer arrangement | |
JPS6012810A (en) | Piezoelectric oscillation parts and their manufacture | |
CN115005876A (en) | A kind of array ultrasonic transducer and preparation method thereof | |
WO2019119178A1 (en) | Mode conversion ultrasonic transducer and method for manufacturing same | |
CN109412546A (en) | A substrate planted with welding material and its processing technology |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
PB01 | Publication | ||
PB01 | Publication | ||
SE01 | Entry into force of request for substantive examination | ||
SE01 | Entry into force of request for substantive examination | ||
TA01 | Transfer of patent application right | ||
TA01 | Transfer of patent application right |
Effective date of registration: 20210714 Address after: 201800 3rd floor, building 16, 9 Lane 258, Yinlong Road, Waigang Town, Jiading District, Shanghai Applicant after: MANTU ELECTRONIC (SHANGHAI) Co.,Ltd. Address before: 410220 central area, 2 / F, incubation building, building C3, golden Pioneer Park, Wangcheng economic and Technological Development Zone, Changsha City, Hunan Province Applicant before: CHANGSHA FENBEI ELECTRONIC TECHNOLOGY Co.,Ltd. |
|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
TR01 | Transfer of patent right | ||
TR01 | Transfer of patent right |
Effective date of registration: 20250426 Address after: Area A, 3rd and 4th floors, No. 12, Lane 66, Hengyu Road, Jiading District, Shanghai, 201814 Patentee after: Eintec Technology (Shanghai) Co.,Ltd. Country or region after: China Address before: 201800 3rd floor, building 16, 9 Lane 258, Yinlong Road, Waigang Town, Jiading District, Shanghai Patentee before: MANTU ELECTRONIC (SHANGHAI) Co.,Ltd. Country or region before: China |