CN106684238B - Electrode lead device and method of two-dimensional array ultrasonic transducer - Google Patents
Electrode lead device and method of two-dimensional array ultrasonic transducer Download PDFInfo
- Publication number
- CN106684238B CN106684238B CN201710119036.5A CN201710119036A CN106684238B CN 106684238 B CN106684238 B CN 106684238B CN 201710119036 A CN201710119036 A CN 201710119036A CN 106684238 B CN106684238 B CN 106684238B
- Authority
- CN
- China
- Prior art keywords
- electrodes
- electrode
- piezoelectric wafer
- width
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000000034 method Methods 0.000 title claims abstract description 15
- 238000002955 isolation Methods 0.000 claims abstract description 57
- 238000007747 plating Methods 0.000 claims description 6
- 238000005520 cutting process Methods 0.000 claims description 2
- 238000004519 manufacturing process Methods 0.000 abstract description 5
- 238000005530 etching Methods 0.000 description 9
- 238000010586 diagram Methods 0.000 description 5
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 4
- 229910052737 gold Inorganic materials 0.000 description 4
- 239000010931 gold Substances 0.000 description 4
- 238000000926 separation method Methods 0.000 description 3
- 238000003466 welding Methods 0.000 description 3
- 239000007772 electrode material Substances 0.000 description 2
- 229910001120 nichrome Inorganic materials 0.000 description 2
- 229910052759 nickel Inorganic materials 0.000 description 2
- 238000005476 soldering Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000003698 laser cutting Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000000523 sample Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
- H10N30/875—Further connection or lead arrangements, e.g. flexible wiring boards, terminal pins
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/01—Manufacture or treatment
- H10N30/06—Forming electrodes or interconnections, e.g. leads or terminals
-
- H—ELECTRICITY
- H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N—ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
- H10N30/00—Piezoelectric or electrostrictive devices
- H10N30/80—Constructional details
- H10N30/87—Electrodes or interconnections, e.g. leads or terminals
Landscapes
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Ultra Sonic Daignosis Equipment (AREA)
Abstract
The invention discloses an electrode lead device and method of a two-dimensional array ultrasonic transducer, comprising an electrode body, lead pins and a back lining, wherein the electrode body comprises a first public electrode isolation layer, a piezoelectric wafer and a second public electrode isolation layer, the upper layer of the first public electrode isolation layer is connected with the lower layer of the piezoelectric wafer, the upper layer of the piezoelectric wafer is connected with the lower layer of the second public electrode isolation layer, the back lining is arranged on the electrode body, the lead pins are embedded in the back lining, and the lead pins are arranged on the upper layer of the second public electrode isolation layer. The electrode lead device and the electrode lead method for the two-dimensional array ultrasonic transducer are suitable for the two-dimensional array ultrasonic transducers with different frequencies, ensure the consistency of array elements and improve the yield and the manufacturing efficiency of the two-dimensional array ultrasonic transducer. And the transducer has good stability and is suitable for mass production.
Description
Technical Field
The invention relates to a piezoelectric ultrasonic transducer, in particular to an electrode lead device and method of a two-dimensional array ultrasonic transducer.
Background
Two-dimensional array ultrasonic transducers currently have two arrangement modes, one is that the two directions of the two directions are divided into M multiplied by N electrodes on the same surface of a piezoelectric wafer, and the other surface is used as a common electrode to form a two-dimensional array with the total number of array elements of M multiplied by N; the other is that one side of the piezoelectric wafer is longitudinally divided into M electrodes, the other side of the piezoelectric wafer is transversely divided into N electrodes, and then each side of the piezoelectric wafer is adhered with a virtual common electrode to form a two-dimensional array with the total number of array elements of M multiplied by N.
1. The method of soldering is not suitable for ultrasonic transducers with higher frequency, such as 15MHz ultrasonic transducers, the thickness of the piezoelectric wafer is only 0.1mm, and the piezoelectric wafer is easy to depolarize and generate failure in the soldering process.
2. The welding method is not suitable for ultrasonic transducers with array element spacing smaller than 0.3mm, such as array elements with length and width of 0.3mm, but the diameters of smaller welding spots are close to 0.3mm, and if the welding spots are on the surface of a piezoelectric wafer, the performance of the ultrasonic transducer is greatly reduced.
Although the bonding problem is solved by adopting the mode of bonding the FPC, for the high-frequency probe, the thickness of the front end FPC is smaller than a quarter wavelength, such as a 15MHz ultrasonic transducer, ultrasonic waves pass through the FPC, the quarter wavelength is about 0.05mm, the thickness of the existing thinnest FPC is about 0.1mm, and the thickness of the FPC also influences the performance of the ultrasonic transducer.
Disclosure of Invention
In order to solve the problems, the invention provides an electrode lead device and method of a two-dimensional array ultrasonic transducer, which ensure the consistency of array elements, improve the yield and the manufacturing efficiency of the two-dimensional array ultrasonic transducer and are suitable for ultrasonic transducers with different frequencies.
The electrode lead device of the two-dimensional array ultrasonic transducer comprises an electrode body, lead pins and a back lining, wherein the electrode body comprises a first public electrode isolation layer, a piezoelectric wafer and a second public electrode isolation layer, the upper layer of the first public electrode isolation layer is connected with the lower layer of the piezoelectric wafer, the upper layer of the piezoelectric wafer is connected with the lower layer of the second public electrode isolation layer, the back lining is arranged on the electrode body, the lead pins are embedded in the back lining, and the lead pins are arranged on the upper layer of the second public electrode isolation layer.
In the above scheme, the lead pin comprises a first lead pin, a second lead pin and a third lead pin, the first lead pin is arranged on 4 corners, the second lead pin is arranged in front of and behind the upper layer of the second public electrode isolation layer, and the third lead pin is arranged on the left and right of the upper layer of the second public electrode isolation layer.
In the above scheme, the first common electrode isolation layer, the piezoelectric wafer and the second common electrode isolation layer in the electrode body are made of one of nickel, nichrome and gold.
An electrode lead method of a two-dimensional array ultrasonic transducer is characterized by comprising the following steps:
s1: preparing a cuboid piezoelectric wafer, wherein the lengths of edges of the piezoelectric wafer parallel to the X axis are L+2c, the lengths of edges parallel to the Y axis are W, and the lengths of edges parallel to the Z axis are T;
s2: plating a layer of electrodes on the upper and lower surfaces, front, back, left and right sides of the piezoelectric wafer to form all the conduction of six electrodes of the cuboid piezoelectric wafer;
s3: cutting the piezoelectric wafer with the plated electrodes along the Y-axis direction, removing the lengths of the two ends along the X-axis direction to obtain a piezoelectric wafer with the two side surfaces parallel to the Z-Y plane without electrodes, wherein the length of the obtained piezoelectric wafer along the X-axis edge is L, and the length of the obtained piezoelectric wafer along the Y-axis edge is W;
s4: dividing left and right side electrodes of the piezoelectric wafer to obtain 2M second electrodes, wherein the center distance between adjacent electrodes of the 2M second electrodes is a, and 4 first electrodes with the width d are obtained;
s5: dividing the electrode on the lower surface of the piezoelectric wafer to obtain M fourth electrodes, wherein the center distance between the adjacent electrodes of the M fourth electrodes is a, and simultaneously obtaining 2 third electrodes with the width d;
s6: dividing the upper surface electrode of the piezoelectric wafer to obtain 2M sixth electrodes, wherein the center-to-center distance between the adjacent electrodes of the 2M sixth electrodes is a, simultaneously dividing the electrodes to obtain N seventh electrodes, the center-to-center distance between the adjacent electrodes of the N seventh electrodes is b, and simultaneously dividing the electrodes to obtain 4 fifth electrodes with the length and the width of d;
s7: preparing a first public electrode isolation layer and a second public electrode isolation layer which have the same length and width as the piezoelectric wafer, and plating a layer of electrode on the upper surface, the lower surface, the front surface, the rear surface, the left surface and the right surface of the first public electrode isolation layer and the second public electrode isolation layer to form six surface electrodes to be fully conducted;
s8: dividing the front, back, left and right side electrodes of the first public electrode isolating layer to obtain 8 eighth electrodes with length and width d; simultaneously obtaining 4 second electrodeless areas with the width T;
s9: dividing the lower surface electrode of the first public electrode isolating layer to obtain 4 ninth electrodes with the length and the width of d; simultaneously obtaining a tenth electrode in the central electrode area, wherein the tenth electrode is communicated with the 4 ninth electrodes, and simultaneously obtaining a third electrode-free area at the edge;
s10: dividing the electrode on the upper surface of the first public electrode isolating layer to obtain an eleventh electrode with the length and width of d at the end angle of 4 strips, wherein the other areas are fourth electrodeless areas;
s11: dividing the front, back, left and right side electrodes of the second public electrode isolating layer to obtain 8 twelfth electrodes with the length and the width of d, obtaining 2M fourteenth electrodes with the width of a, and obtaining 2N thirteenth electrodes with the width of b;
s12: dividing the lower surface electrode of the second public electrode isolation layer to obtain 4 fifteenth electrodes, wherein the length and the width of the 4 fifteenth electrodes are d, 2M seventeenth electrodes are obtained simultaneously, the center distance between the adjacent electrodes of the 2M seventeenth electrodes is a, the width is d, 2N thirteenth electrodes are obtained simultaneously, the center distance between the adjacent electrodes of the 2N thirteenth electrodes is b, the width is d, and a central fifth electrodeless region is obtained simultaneously;
s13: dividing the upper surface electrode of a second public electrode isolation layer to obtain 4 electrodes, wherein the length and the width of the 4 eighteenth electrodes are d, simultaneously obtaining a twenty-first electrode of a central electrode area, the twenty-first electrode of the central electrode area is communicated with the 4 eighteenth electrodes, simultaneously obtaining 2M twentieth electrodes, the center distances between adjacent electrodes of the 2M twentieth electrodes are a, the widths are d, simultaneously obtaining 2N nineteenth electrodes, the center distances between adjacent electrodes of the 2N nineteenth electrodes are b, and the widths are d;
s14: preparing a backing inlaid with lead pins, wherein M second lead pins are arranged, and N third lead pins are arranged;
s15: the upper layer of the first public electrode isolation layer is connected with the lower layer of the piezoelectric wafer, the upper layer of the piezoelectric wafer is connected with the lower layer of the second public electrode isolation layer, and the upper layer of the second public electrode isolation layer is connected with the backing, so that the electrode connection of the two-dimensional array ultrasonic transducer of M multiplied by N array elements is completed.
The invention has the advantages and beneficial effects that: the electrode lead device and the electrode lead method for the two-dimensional array ultrasonic transducer are suitable for the two-dimensional array ultrasonic transducers with different frequencies, ensure the consistency of array elements and improve the yield and the manufacturing efficiency of the two-dimensional array ultrasonic transducer. And the transducer has good stability and is suitable for mass production.
Drawings
In order to more clearly illustrate the embodiments of the invention or the technical solutions of the prior art, the drawings which are used in the description of the embodiments or the prior art will be briefly described, it being obvious that the drawings in the description below are only some embodiments of the invention, and that other drawings can be obtained according to these drawings without inventive faculty for a person skilled in the art.
FIG. 1 is a schematic diagram of the structure of the present invention;
FIG. 2 is a schematic diagram of a piezoelectric wafer;
FIG. 3 is a schematic diagram of the separation of a piezoelectric wafer;
FIG. 4 is a schematic diagram showing the division of the first common electrode isolation layer;
FIG. 5 is a schematic diagram showing the division of the second common electrode isolation layer;
fig. 6 is a schematic structural view of a backing.
In the figure: 1. a first common electrode isolation layer 101, an eighth electrode 102, a second electrodeless region 103, a ninth electrode 104, a third electrodeless region 105, a tenth electrode 106, an eleventh electrode 107, and a fourth electrodeless region
2. Piezoelectric wafer 201, first electrode 202, second electrode 203, first electrode-free region 204, third electrode 205, fourth electrode 206, fifth electrode 207, sixth electrode 208, seventh electrode 209, first separation groove
3. A second common electrode isolation layer 301, a twelfth electrode 302, a thirteenth electrode 303, a fourteenth electrode 304, a fifteenth electrode 305, a sixteenth electrode 306, a seventeenth electrode 307, a fifth electrode-free region 308, an eighteenth electrode 309, a nineteenth electrode 3010, a twentieth electrode 3011, a twenty-first electrode 3012, and a second separation groove
4. Backing 5, lead pin 501, first lead pin 502, second lead pin 503, third lead pin
Detailed Description
The following describes the embodiments of the present invention further with reference to the drawings and examples. The following examples are only for more clearly illustrating the technical aspects of the present invention, and are not intended to limit the scope of the present invention.
As shown in fig. 1, the invention relates to an electrode lead device of a two-dimensional array ultrasonic transducer, which comprises an electrode body, a lead pin 5 and a back lining 4, wherein the electrode body comprises a first public electrode isolation layer 1, a piezoelectric wafer 2 and a second public electrode isolation layer 3, the upper layer of the first public electrode isolation layer 1 is connected with the lower layer of the piezoelectric wafer 2, the upper layer of the piezoelectric wafer 2 is connected with the lower layer of the second public electrode isolation layer 3, the back lining 4 is arranged on the electrode body, the lead pin 5 is embedded in the back lining 4, and the lead pin 5 is arranged on the upper layer of the second public electrode isolation layer 3. The lead pins 5 include a first lead pin 501, a second lead pin 502 and a third lead pin 503, the first lead pin 501 is disposed on 4 corners, the second lead pin 502 is disposed in front of and behind the upper layer of the second common electrode isolation layer 3, and the third lead pin 503 is disposed on the left and right of the upper layer of the second common electrode isolation layer 3. Preferably, the materials of the first common electrode isolation layer 1, the piezoelectric wafer 2 and the second common electrode isolation layer 3 in the electrode body are one of nickel, nichrome and gold.
An electrode lead method of a two-dimensional array ultrasonic transducer comprises the following steps:
s1: as shown in FIG. 2 (1), a rectangular piezoelectric wafer was prepared, and the lengths of the edges of the piezoelectric wafer 2 parallel to the X axis were L+2c, L.gtoreq.2.0 mm,0.1 mm.gtoreq.c.ltoreq.1.0 mm, the lengths of the edges parallel to the Y axis were W.gtoreq.2.0 mm, the lengths of the edges parallel to the Z axis were T, and T.gtoreq.0.01 mm.
S2: and plating a layer of electrode on the upper surface, the lower surface and the four side surfaces of the piezoelectric wafer 2 to form all the conduction of six surface electrodes of the cuboid piezoelectric wafer, wherein the electrode material is gold, and the thickness of the electrode is 300-800 nm.
S3: as shown in fig. 2 (2), the piezoelectric wafer with the electrode plated is cut along the Y axis, and the length of each of the two ends along the X axis is c, to obtain the piezoelectric wafer shown in fig. 2 (3), wherein the length of the edge of the piezoelectric wafer along the X axis is L, and the length of the edge along the Y axis is W.
S4: the left and right side electrodes of the piezoelectric wafer are divided by etching or laser dicing according to fig. 3 (1). The center distance between adjacent electrodes in the second electrode 202 is a, a is more than or equal to 0.05mm, 2M pieces of M is more than or equal to 4 in total of the second electrode 202, the width of the first electrode 201 is d, and the width d is more than or equal to 0.3mm and less than or equal to 1.0mm. A first dividing groove 209 is formed between adjacent electrodes of the second electrode 202. The first dividing groove 209 has a width of one tenth of a. The front and rear sides of the piezoelectric wafer are first electrodeless areas 203.
S5: the electrode on the lower surface of the piezoelectric wafer is divided by etching or laser cutting according to fig. 3 (2). The width d of the third electrode 204, the center distance a between adjacent electrodes in the fourth electrode 205, the width a is more than or equal to 0.05mm, M electrodes 205 are provided, and a first dividing groove 209 is formed between the adjacent electrodes of the fourth electrode 205.
S6: the upper surface electrode of the piezoelectric wafer is divided by etching or laser dicing according to fig. 3 (3). The length and width of the fifth electrode 206 are d, the center-to-center distance between adjacent electrodes in the sixth electrode 207 is a, the total number of the sixth electrodes 207 is 2M, and the sixth electrode 207 is communicated with the fourth electrode 205 through the second electrode 202. The center distance between adjacent electrodes in the seventh electrode 208 is b, b is more than or equal to 0.05mm, N number of the seventh electrode 208 is N, and N is more than or equal to 4. The seventh electrode 208 has a first dividing groove 209 between adjacent electrodes.
S7: preparing a first public electrode isolation layer 1 and a second public electrode isolation layer 2 with the same length and width as the piezoelectric wafer 2, plating a layer of electrode on the upper surface, the lower surface and the four sides of the first public electrode isolation layer 1 and the second public electrode isolation layer 2 to form all conduction of six surface electrodes, wherein the electrode material is gold, and the thickness of the electrode is 300nm to 800nm.
S8: the etching method is adopted to divide the front, back, left and right side electrodes of the first public electrode isolating layer according to the figure 4 (1). The eighth electrode 101 has a length and a width d, and is beside the second electrode-free region 102.
S9: the lower surface electrode of the first common electrode isolation layer is divided by etching according to fig. 4 (2). The ninth electrodes 103 each have a length d and a width d, and the tenth electrodes 105 are connected to the ninth electrodes 103 and are provided with third electrode-free regions 104.
S10: the upper surface electrode of the first common electrode isolation layer is divided by etching according to fig. 4 (3). The length and width of the eleventh electrode 106 are d, and the eleventh electrode 106 communicates with the ninth electrode 103 and the tenth electrode 105 through the eighth electrode 101. A fourth electrodeless region 107 is provided in the middle.
S11: the four side electrodes of the second common electrode isolation layer are divided according to fig. 5 (1) by etching, the length and width of the twelfth electrode 301 are d, the center distance between adjacent electrodes in the thirteenth electrode 302 is b, the number of thirteenth electrodes 302 is 2N, the center distance between adjacent electrodes in the fourteenth electrode 303 is a, the number of fourteenth electrodes 303 is 2M, and a second dividing groove 3012 is arranged between the fourteenth electrodes 303.
S12: the lower surface electrode of the second common electrode isolation layer is divided by adopting an etching method according to fig. 5 (2), the length and width of the fifteenth electrode 304 are d, the center-to-center distance between the adjacent electrodes in the sixteenth electrode 305 is b, the thirteenth electrode 302 is 2N in total, the center-to-center distance between the adjacent electrodes in the seventeenth electrode 306 is a, the seventeenth electrode 306 is 2M in total, a second dividing groove 3012 is arranged between the seventeenth electrode 306, and a fifth electrodeless region 307 is arranged in the center.
S13: the upper surface electrode of the second common electrode isolation layer is divided according to fig. 5 (3) by etching, the length and width of the eighteenth electrode 308 are d, and the twenty-first electrode 3011 is communicated with the eighteenth electrode 308. The center-to-center distance of adjacent electrodes among the nineteenth electrodes 309 is b, the nineteenth electrodes 309 have 2N in total, the center-to-center distance of adjacent electrodes among the twentieth electrodes 3010 is a, the twentieth electrodes 3010 have 2M in total, a second dividing groove 3012 is provided between the twentieth electrodes 3010, the nineteenth electrodes 309 communicate with the sixteenth electrodes 305 through the thirteenth electrodes 302, and the twentieth electrodes 3010 communicate with the seventeenth electrodes 306 through the fourteenth electrodes 303.
S14: as shown in fig. 6, lead pins are embedded in the backing 4 in advance, 4 first lead pins 501 are common electrode leads, M lead pins are second lead pins 502, N lead pins are third lead pins 503, and two directions are staggered.
S15: as shown in fig. 1, the upper surface of the first common electrode isolation layer 1 is bonded to the lower surface of the piezoelectric wafer 2, the upper surface of the piezoelectric wafer 2 is bonded to the lower surface of the second common electrode isolation layer 3, and the upper surface of the second common electrode isolation layer 3 is bonded to the backing 4, so as to complete electrode connection of the two-dimensional array ultrasonic transducer of m×n array elements.
The examples are set forth only to aid in understanding the invention and should not be construed to limit the scope of the invention. For convenience in describing the invention, the orientation of the components is agreed that the "upper surface" is a plane formed parallel to the X-Y axis, near the positive Z axis; the lower surface is a plane parallel to the X-Y axis and is close to the Z axial direction; the front side surface is a plane parallel to the Z-Y axis and is close to the positive direction of the X axis; the back side surface is a plane parallel to the Z-Y axis and is close to the negative direction of the X axis; the left side surface is a plane parallel to the Z-X axis and is close to the negative direction of the Y axis; the right side surface is a plane parallel to the Z-X axis and is close to the positive direction of the Y axis. It should be understood that the orientations or positional relationships indicated by the terms "upper surface," "lower surface," "front side," "rear side," "left side," "right side," etc. are based on the orientations or positional relationships shown in the drawings, are merely for purposes of describing the present invention and simplifying the description, and do not indicate or imply that the device or element being referred to must have a particular orientation, be configured and operated in a particular orientation, and therefore should not be construed as limiting the present invention.
The foregoing description of the preferred embodiments of the invention is not intended to be limiting, but rather is intended to cover all modifications, equivalents, alternatives, and improvements that fall within the spirit and scope of the invention.
Claims (1)
1. An electrode lead method of a two-dimensional array ultrasonic transducer is characterized by comprising the following steps:
s1: preparing a cuboid piezoelectric wafer, wherein the lengths of edges of the piezoelectric wafer parallel to the X axis are L+2c, the lengths of edges parallel to the Y axis are W, and the lengths of edges parallel to the Z axis are T;
s2: plating a layer of electrodes on the upper and lower surfaces, front, back, left and right sides of the piezoelectric wafer to form all the conduction of six electrodes of the cuboid piezoelectric wafer;
s3: cutting the piezoelectric wafer with the plated electrodes along the Y-axis direction, removing the lengths of the two ends along the X-axis direction to obtain a piezoelectric wafer with the two side surfaces parallel to the Z-Y plane without electrodes, wherein the length of the obtained piezoelectric wafer along the X-axis edge is L, and the length of the obtained piezoelectric wafer along the Y-axis edge is W;
s4: dividing left and right side electrodes of the piezoelectric wafer to obtain 2M second electrodes, wherein the center distance between adjacent electrodes of the 2M second electrodes is a, and 4 first electrodes with the width d are obtained;
s5: dividing the electrode on the lower surface of the piezoelectric wafer to obtain M fourth electrodes, wherein the center distance between the adjacent electrodes of the M fourth electrodes is a, and simultaneously obtaining 2 third electrodes with the width d;
s6: dividing the upper surface electrode of the piezoelectric wafer to obtain 2M sixth electrodes, wherein the center-to-center distance between the adjacent electrodes of the 2M sixth electrodes is a, simultaneously dividing the electrodes to obtain N seventh electrodes, the center-to-center distance between the adjacent electrodes of the N seventh electrodes is b, and simultaneously dividing the electrodes to obtain 4 fifth electrodes with the length and the width of d;
s7: preparing a first public electrode isolation layer and a second public electrode isolation layer which have the same length and width as the piezoelectric wafer, and plating a layer of electrode on the upper surface, the lower surface, the front surface, the rear surface, the left surface and the right surface of the first public electrode isolation layer and the second public electrode isolation layer to form six surface electrodes to be fully conducted;
s8: dividing the front, back, left and right side electrodes of the first public electrode isolating layer to obtain 8 eighth electrodes with length and width d; simultaneously obtaining 4 second electrodeless areas with the width T;
s9: dividing the lower surface electrode of the first public electrode isolating layer to obtain 4 ninth electrodes with the length and the width of d; simultaneously obtaining a tenth electrode in the central electrode area, wherein the tenth electrode is communicated with the 4 ninth electrodes, and simultaneously obtaining a third electrode-free area at the edge;
s10: dividing the electrode on the upper surface of the first public electrode isolating layer to obtain an eleventh electrode with the length and width of d at the end angle of 4 strips, wherein the other areas are fourth electrodeless areas;
s11: dividing the front, back, left and right side electrodes of the second public electrode isolating layer to obtain 8 twelfth electrodes with the length and the width of d, wherein the center distance between adjacent electrodes in the thirteenth electrode is b, the thirteenth electrode is 2N, the center distance between adjacent electrodes in the fourteenth electrode is a, and the fourteenth electrode is 2M;
s12: dividing the lower surface electrode of the second public electrode isolation layer to obtain 4 fifteenth electrodes, wherein the length and the width of the 4 fifteenth electrodes are d, 2M seventeenth electrodes are obtained simultaneously, the center distance between the adjacent electrodes of the 2M seventeenth electrodes is a, the width is d, 2N sixteenth electrodes are obtained simultaneously, the center distance between the adjacent electrodes of the 2N sixteenth electrodes is b, the width is d, and a central fifth electrodeless region is obtained simultaneously;
s13: dividing the upper surface electrode of a second public electrode isolation layer to obtain 4 electrodes, wherein the length and the width of the 4 eighteenth electrodes are d, simultaneously obtaining a twenty-first electrode of a central electrode area, the twenty-first electrode of the central electrode area is communicated with the 4 eighteenth electrodes, simultaneously obtaining 2M twentieth electrodes, the center distances between adjacent electrodes of the 2M twentieth electrodes are a, the widths are d, simultaneously obtaining 2N nineteenth electrodes, the center distances between adjacent electrodes of the 2N nineteenth electrodes are b, and the widths are d;
s14: preparing a backing inlaid with lead pins, wherein M second lead pins are arranged, and N third lead pins are arranged;
s15: the upper layer of the first public electrode isolation layer is connected with the lower layer of the piezoelectric wafer, the upper layer of the piezoelectric wafer is connected with the lower layer of the second public electrode isolation layer, and the upper layer of the second public electrode isolation layer is connected with the backing, so that the electrode connection of the two-dimensional array ultrasonic transducer of M multiplied by N array elements is completed.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710119036.5A CN106684238B (en) | 2017-03-02 | 2017-03-02 | Electrode lead device and method of two-dimensional array ultrasonic transducer |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710119036.5A CN106684238B (en) | 2017-03-02 | 2017-03-02 | Electrode lead device and method of two-dimensional array ultrasonic transducer |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106684238A CN106684238A (en) | 2017-05-17 |
| CN106684238B true CN106684238B (en) | 2023-05-09 |
Family
ID=58862382
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710119036.5A Active CN106684238B (en) | 2017-03-02 | 2017-03-02 | Electrode lead device and method of two-dimensional array ultrasonic transducer |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN106684238B (en) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2020077638A1 (en) * | 2018-10-19 | 2020-04-23 | 深圳迈瑞生物医疗电子股份有限公司 | Backing block, ultrasonic probe, area-array ultrasonic probe, and ultrasonic diagnosis and imaging device |
| CN112162168B (en) * | 2020-09-29 | 2022-08-16 | 上海船舶电子设备研究所(中国船舶重工集团公司第七二六研究所) | Signal extraction method and system of multi-channel high-frequency receiving transducer array |
Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63276400A (en) * | 1987-05-07 | 1988-11-14 | Fujitsu Ltd | Ultrasonic probe and its manufacture |
| JPH07131895A (en) * | 1993-11-08 | 1995-05-19 | Toshiba Corp | Two-dimensional array type ultrasonic probe and its production |
| CN102151150A (en) * | 2011-01-25 | 2011-08-17 | 古伦勇 | Two-dimensional array and three-dimensional imaging transducer and manufacturing method thereof |
| CN102755176A (en) * | 2012-07-02 | 2012-10-31 | 华中科技大学 | Two-dimensional ultrasonic area array probe and manufacturing method thereof |
| CN104586430A (en) * | 2015-01-19 | 2015-05-06 | 深圳市理邦精密仪器股份有限公司 | Ultrasonic probe and manufacturing method for ultrasonic probe |
| CN105127082A (en) * | 2015-09-16 | 2015-12-09 | 深圳市理邦精密仪器股份有限公司 | Ultrasonic transducer and manufacturing method thereof |
| CN105411623A (en) * | 2015-12-25 | 2016-03-23 | 中国科学院深圳先进技术研究院 | Two-dimensional area array ultrasonic transducer and manufacturing method thereof |
| CN206602129U (en) * | 2017-03-02 | 2017-10-31 | 长沙芬贝电子科技有限公司 | A kind of contact conductor device of two dimensional array ultrasound transducer |
-
2017
- 2017-03-02 CN CN201710119036.5A patent/CN106684238B/en active Active
Patent Citations (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS63276400A (en) * | 1987-05-07 | 1988-11-14 | Fujitsu Ltd | Ultrasonic probe and its manufacture |
| JPH07131895A (en) * | 1993-11-08 | 1995-05-19 | Toshiba Corp | Two-dimensional array type ultrasonic probe and its production |
| CN102151150A (en) * | 2011-01-25 | 2011-08-17 | 古伦勇 | Two-dimensional array and three-dimensional imaging transducer and manufacturing method thereof |
| CN102755176A (en) * | 2012-07-02 | 2012-10-31 | 华中科技大学 | Two-dimensional ultrasonic area array probe and manufacturing method thereof |
| CN104586430A (en) * | 2015-01-19 | 2015-05-06 | 深圳市理邦精密仪器股份有限公司 | Ultrasonic probe and manufacturing method for ultrasonic probe |
| CN105127082A (en) * | 2015-09-16 | 2015-12-09 | 深圳市理邦精密仪器股份有限公司 | Ultrasonic transducer and manufacturing method thereof |
| CN105411623A (en) * | 2015-12-25 | 2016-03-23 | 中国科学院深圳先进技术研究院 | Two-dimensional area array ultrasonic transducer and manufacturing method thereof |
| CN206602129U (en) * | 2017-03-02 | 2017-10-31 | 长沙芬贝电子科技有限公司 | A kind of contact conductor device of two dimensional array ultrasound transducer |
Also Published As
| Publication number | Publication date |
|---|---|
| CN106684238A (en) | 2017-05-17 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US9812634B2 (en) | Method of making thick film transducer arrays | |
| US6467138B1 (en) | Integrated connector backings for matrix array transducers, matrix array transducers employing such backings and methods of making the same | |
| CN103210665B (en) | The manufacture method of ultrasonic transducer, ultrasound probe and ultrasonic transducer | |
| CN104586430B (en) | Ultrasonic probe and manufacturing method for ultrasonic probe | |
| JPH10304495A (en) | Coupling packing block and composite converter array | |
| JP4519259B2 (en) | Two-dimensional array ultrasonic probe and manufacturing method thereof | |
| CN212521818U (en) | Micro array ultrasonic transducer and ultrasonic probe comprising same | |
| CN103155410A (en) | Piezoelectric vibration device | |
| CN106684238B (en) | Electrode lead device and method of two-dimensional array ultrasonic transducer | |
| CN101364632B (en) | Piezoelectric element applied in ultrasonic transducer and sensor and manufacturing method thereof | |
| CN111803125A (en) | Micro array ultrasonic transducer, preparation method thereof and ultrasonic probe comprising micro array ultrasonic transducer | |
| CN111465455A (en) | High frequency ultrasonic transducer | |
| WO2021093559A1 (en) | Ultrasonic probe, piezoelectric composite wafer and preparation method therefor | |
| JP2009082612A (en) | Ultrasonic probe and piezoelectric transducer | |
| US20230415197A1 (en) | Planar Phased Ultrasound Transducer Array | |
| JP2005020700A (en) | Ultrasonic wave transmitter/receiver and method for manufacturing the same | |
| CN206602129U (en) | A kind of contact conductor device of two dimensional array ultrasound transducer | |
| CN110718626B (en) | Mode conversion one-dimensional linear array piezoelectric element and preparation method thereof | |
| CN110681558B (en) | Preparation method of one-dimensional linear array piezoelectric element and two-dimensional area array ultrasonic transducer | |
| CN106067512B (en) | A kind of Substrate treatment PZT (piezoelectric transducer) of uniform million sound effect | |
| US20240050068A1 (en) | Planar linear array for ultrasound | |
| JP4400748B2 (en) | Piezoelectric vibrator, piezoelectric component and manufacturing method thereof | |
| CN214766703U (en) | Array ultrasonic transducer | |
| JP3846779B2 (en) | Piezoelectric vibrator, piezoelectric component and manufacturing method thereof | |
| CN113649253A (en) | Arc-shaped transducer array and preparation method thereof |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20210714 Address after: 201800 3rd floor, building 16, 9 Lane 258, Yinlong Road, Waigang Town, Jiading District, Shanghai Applicant after: MANTU ELECTRONIC (SHANGHAI) Co.,Ltd. Address before: 410220 central area, 2 / F, incubation building, building C3, golden Pioneer Park, Wangcheng economic and Technological Development Zone, Changsha City, Hunan Province Applicant before: CHANGSHA FENBEI ELECTRONIC TECHNOLOGY Co.,Ltd. |
|
| GR01 | Patent grant | ||
| GR01 | Patent grant |