CN106684162A - Crystalline silicon solar cell with cross electrode and preparation method thereof - Google Patents
Crystalline silicon solar cell with cross electrode and preparation method thereof Download PDFInfo
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- CN106684162A CN106684162A CN201611073643.4A CN201611073643A CN106684162A CN 106684162 A CN106684162 A CN 106684162A CN 201611073643 A CN201611073643 A CN 201611073643A CN 106684162 A CN106684162 A CN 106684162A
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- monocrystalline silicon
- doped layer
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- 238000002360 preparation method Methods 0.000 title claims description 10
- 229910021419 crystalline silicon Inorganic materials 0.000 title abstract description 4
- 229910021421 monocrystalline silicon Inorganic materials 0.000 claims abstract description 46
- 239000010410 layer Substances 0.000 claims description 57
- 229910052710 silicon Inorganic materials 0.000 claims description 13
- 239000010703 silicon Substances 0.000 claims description 13
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 10
- 239000006117 anti-reflective coating Substances 0.000 claims description 9
- 239000013078 crystal Substances 0.000 claims description 9
- 238000000034 method Methods 0.000 claims description 9
- 229910052751 metal Inorganic materials 0.000 claims description 8
- 239000002184 metal Substances 0.000 claims description 8
- 239000000758 substrate Substances 0.000 claims description 4
- 239000000126 substance Substances 0.000 claims description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- 239000004411 aluminium Substances 0.000 claims description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical group [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 2
- 229910052782 aluminium Inorganic materials 0.000 claims description 2
- 239000010949 copper Substances 0.000 claims description 2
- 229910052802 copper Inorganic materials 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000012528 membrane Substances 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000002356 single layer Substances 0.000 claims description 2
- 239000007774 positive electrode material Substances 0.000 claims 1
- 239000000243 solution Substances 0.000 description 4
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 description 2
- 238000009792 diffusion process Methods 0.000 description 2
- 230000005611 electricity Effects 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000010521 absorption reaction Methods 0.000 description 1
- 229910000147 aluminium phosphate Inorganic materials 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 238000001312 dry etching Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000011267 electrode slurry Substances 0.000 description 1
- 235000008216 herbs Nutrition 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000000623 plasma-assisted chemical vapour deposition Methods 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 210000002268 wool Anatomy 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022408—Electrodes for devices characterised by at least one potential jump barrier or surface barrier
- H01L31/022425—Electrodes for devices characterised by at least one potential jump barrier or surface barrier for solar cells
- H01L31/022433—Particular geometry of the grid contacts
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
- H01L31/03529—Shape of the potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/068—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN homojunction type, e.g. bulk silicon PN homojunction solar cells or thin film polycrystalline silicon PN homojunction solar cells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1804—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof comprising only elements of Group IV of the Periodic Table
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
- Y02E10/547—Monocrystalline silicon PV cells
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Engineering & Computer Science (AREA)
- Computer Hardware Design (AREA)
- Power Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- Electromagnetism (AREA)
- General Physics & Mathematics (AREA)
- Physics & Mathematics (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Life Sciences & Earth Sciences (AREA)
- Sustainable Development (AREA)
- Manufacturing & Machinery (AREA)
- Sustainable Energy (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a crystalline silicon solar cell with a cross electrode. The solar cell comprises a monocrystalline silicon wafer. A back reflection layer is arranged on one surface of the monocrystalline silicon wafer. Textures and antireflection film structures are arranged on the other surface of the monocrystalline silicon wafer. A positive electrode is arranged at one end of the monocrystalline silicon wafer. A negative electrode is arranged at the other end of the monocrystalline silicon wafer. P+ doping layers are arranged at the inner side of the positive electrode. N+ doping layers are arranged at the inner side of the negative electrode. A plurality of PN junction structures are arranged on the monocrystalline silicon wafer. The PN junction structures comprise the P+ doping layers and the N+ doping layers. Angles of the P+ doping layers and the N+ doping layers are parallel to incident light. The P+ doping layers stretch from the outer side of the monocrystalline silicon wafer to the inner side. The P+ doping layers stretch from the inner side of the monocrystalline silicon wafer to the outer side. The end parts of the P+ doping layers and the N+ doping layers form a cross structure in the middle part of the monocrystalline silicon wafer.
Description
Technical field
The present invention relates to new forms of energy field of batteries, specifically, is related specifically to a kind of crystalline silicon with crossed electrode
Solar cell and preparation method thereof.
Background technology
Conventional crystal-silicon solar cell is that monocrystalline silicon piece is diffuseed to form large area PN junction, the electricity of formation in diffusion furnace
Tank main body structure.The main body of this conventional crystalline silion cell be one by the PN junction for diffuseing to form, photo-induced voltage is produced by PN junction
It is raw, and electric current absorbs sunshine and produces electron hole pair by monocrystalline silicon piece, moves the two poles of the earth to by photo-induced voltage respectively and produces photoproduction
Electric current.Therefore visible ray had to pass through Window layer i.e. P layers before absorbed layer is reached, because this layer is heavily doped layer,
And certain electrical potential difference is formed, P layers must have certain thickness, and such P layers certainly will cause certain sun light loss.
And boundary layer will also result in very big light loss.
The content of the invention
Present invention aims to deficiency of the prior art, there is provided a kind of crystalline silicon sun with crossed electrode
Energy battery and preparation method thereof, to solve problems of the prior art.
Technical problem solved by the invention can employ the following technical solutions to realize：
A kind of crystal silicon solar energy battery with crossed electrode, including monocrystalline silicon piece, in the one side back reflection is provided with
Layer, in the another side of the monocrystalline silicon piece matte and antireflective coating structure are provided with, and in one end of the monocrystalline silicon piece positive electricity is provided with
Pole, the other end of monocrystalline silicon piece is provided with negative electrode, and on the inside of the positive electrode P is provided with+Doped layer, in the negative electrode
Side is provided with N+Doped layer；Some PN junction structures are additionally provided with the monocrystalline silicon piece, the PN junction structure includes P+Doped layer and N+
Doped layer, and the P+Doped layer and N+The angle of doped layer and incident parallel light, P+Doped layer is from monocrystalline silicon piece outside to inner side
Extend, N+Doped layer is extended by monocrystalline silicon piece Inside To Outside, P+Doped layer and N+The end of doped layer is at the middle part of monocrystalline silicon piece
Constitute chi structure.
Further, the matte and antireflective coating structure are multilayer film or single-layer membrane structure.
Further, the material of the positive electrode and negative electrode be aluminium, silver, gold or copper.
A kind of preparation technology of the crystal silicon solar energy battery with crossed electrode, comprises the steps：
1) choose and serve as the monocrystalline silicon piece of substrate and clean；
2) matte and antireflective coating are made in the one side of the monocrystalline silicon piece, is passing through laser and chemical solution while reality
Existing laser grooving technique and laser diffusion technique, make the P with incident parallel light on the face+Doped layer and N+Doped layer；
3) back reflection layer is prepared on the another side of the monocrystalline silicon piece；
4) in the both sides difference metal positive pole or metal negative electrode of the monocrystalline silicon piece.
Compared with prior art, beneficial effects of the present invention are as follows：
The method that present invention employs laser doping defines longitudinal PN junction, makes sunshine be directly incident on monocrystalline silicon suction
Layer is received, the light loss that absorption of the P+ and N+ layers of conventional batteries to sunshine is caused is effectively prevent, so as to effectively improve battery
Conversion efficiency.And requirement of this new solar cell to back reflection layer is reduced, as long as reflecting properties are good, to electric property
No requirement (NR).In addition, the electrode slurry of this battery is significantly reduced, the cost of battery is reduced.
Description of the drawings
Fig. 1 is crystal-silicon solar cell structural representation of the prior art.
Fig. 2 is crystal-silicon solar cell structural representation of the present invention.
Label declaration in figure：Back reflection layer 1, monocrystalline silicon piece 2, metal electrode 3, P+Doped layer 4, matte and antireflective coating are tied
Structure 5, N+Doped layer 6.
Specific embodiment
Technological means, creation characteristic, reached purpose and effect to make present invention realization is easy to understand, with reference to
Specific embodiment, is expanded on further the present invention.
Referring to Fig. 1, a kind of crystal silicon solar energy battery with crossed electrode of the present invention, including monocrystalline silicon piece 2,
Back reflection layer 1 is provided with the one side, matte and antireflective coating structure 5 is provided with the another side of the monocrystalline silicon piece, described
One end of monocrystalline silicon piece 2 is provided with metal electrode 3 (positive electrode), and the other end of monocrystalline silicon piece is provided with metal electrode 3 (negative electrode),
P is provided with the inside of the positive electrode+Doped layer 4, on the inside of the negative electrode N is provided with+Doped layer 6；On the monocrystalline silicon piece
Some PN junction structures are additionally provided with, the PN junction structure includes P+Doped layer and N+Doped layer, and the P+Doped layer and N+Doped layer
Angle and incident parallel light, P+Doped layer is extended from monocrystalline silicon piece outside to inner side, N+Doped layer is outside by monocrystalline silicon piece inner side
Side extends, P+Doped layer and N+The end of doped layer constitutes chi structure at the middle part of monocrystalline silicon piece.
Referring to Fig. 2, a kind of preparation method of the crystal silicon solar energy battery with crossed electrode, including following main step
Suddenly：
I, cleaning substrate：Substrate surface is cleaned with chemical solution liquid；
II, making herbs into wool：The preparation of matte is realized with chemistry or dry etching method or laser means.
III, depositing antireflection film：Antireflective coating is obtained with methods such as PECVD or PVD.
IV, preparation P+ layers：In N-type or p type single crystal silicon piece front laser grooving and while the method for injection BAS
Realize that heavily doped layer P+ is obtained；
V, preparation N+ layers：In N-type or p type single crystal silicon piece back side laser grooving and while the method reality of injection phosphoric acid solution
Existing heavily doped layer N+ is obtained；
VI, making back reflector：Back reflector is made in cell backside；
VII, making positive and negative electrode：With plating, either the method such as serigraphy or evaporated metal, PVD makes electrode.
The general principle and principal character and advantages of the present invention of the present invention has been shown and described above.The technology of the industry
Personnel it should be appreciated that the present invention is not restricted to the described embodiments, the simply explanation described in above-described embodiment and specification this
The principle of invention, without departing from the spirit and scope of the present invention, the present invention also has various changes and modifications, these changes
Change and improvement is both fallen within scope of the claimed invention.The claimed scope of the invention by appending claims and its
Equivalent thereof.
Claims (4)
1. a kind of crystal silicon solar energy battery with crossed electrode, including monocrystalline silicon piece, in the one side back reflection layer is provided with,
Matte and antireflective coating structure are provided with the another side of the monocrystalline silicon piece, in one end of the monocrystalline silicon piece positive electrode are provided with,
The other end of monocrystalline silicon piece is provided with negative electrode, and on the inside of the positive electrode P is provided with+Doped layer, in the inner side of the negative electrode
It is provided with N+Doped layer；Characterized in that, being additionally provided with some PN junction structures on the monocrystalline silicon piece, the PN junction structure includes P+
Doped layer and N+Doped layer, and the P+Doped layer and N+The angle of doped layer and incident parallel light, P+Doped layer is by monocrystalline silicon piece
Outside to inner side extends, N+Doped layer is extended by monocrystalline silicon piece Inside To Outside, P+Doped layer and N+The end of doped layer is in monocrystalline
The middle part of silicon chip constitutes chi structure.
2. the crystal silicon solar energy battery with crossed electrode according to claim 1, it is characterised in that the matte and
Antireflective coating structure is multilayer film or single-layer membrane structure.
3. the crystal silicon solar energy battery with crossed electrode according to claim 1, it is characterised in that the positive electrode
Material with negative electrode is aluminium, silver, gold or copper.
4. a kind of preparation technology of the crystal silicon solar energy battery with crossed electrode, it is characterised in that comprise the steps：
1) choose and serve as the monocrystalline silicon piece of substrate and clean；
2) matte and antireflective coating are made in the one side of the monocrystalline silicon piece, is realizing swashing simultaneously by laser and chemical solution
Light cutting and laser doping technique, make the P with incident parallel light on the face+Doped layer and N+Doped layer；
3) back reflection layer is prepared on the another side of the monocrystalline silicon piece；
4) in the both sides difference metal positive pole or metal negative electrode of the monocrystalline silicon piece.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611073643.4A CN106684162A (en) | 2016-11-29 | 2016-11-29 | Crystalline silicon solar cell with cross electrode and preparation method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611073643.4A CN106684162A (en) | 2016-11-29 | 2016-11-29 | Crystalline silicon solar cell with cross electrode and preparation method thereof |
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| Publication Number | Publication Date |
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| CN106684162A true CN106684162A (en) | 2017-05-17 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611073643.4A Pending CN106684162A (en) | 2016-11-29 | 2016-11-29 | Crystalline silicon solar cell with cross electrode and preparation method thereof |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109166937A (en) * | 2018-09-04 | 2019-01-08 | 苏州钱正科技咨询有限公司 | A kind of silicon-based photovoltaic cells and its manufacturing method |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05175536A (en) * | 1991-12-19 | 1993-07-13 | Sanyo Electric Co Ltd | Manufacture of semiconductor device |
| CN102593232A (en) * | 2012-03-19 | 2012-07-18 | 厦门大学 | PN solar cell with transverse structure and manufacturing method for solar cell |
| CN102903775A (en) * | 2012-10-24 | 2013-01-30 | 中国科学院半导体研究所 | crystalline silicon solar cell structure used for light condensation and laser energy transmission and manufacture method of crystalline silicon solar cell structure |
| CN103390679A (en) * | 2012-05-09 | 2013-11-13 | 上海太阳能工程技术研究中心有限公司 | Thin film solar cell and manufacturing method thereof |
| CN103390660A (en) * | 2012-05-09 | 2013-11-13 | 上海太阳能工程技术研究中心有限公司 | Crystalline silicon solar cell and manufacturing method thereof |
-
2016
- 2016-11-29 CN CN201611073643.4A patent/CN106684162A/en active Pending
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH05175536A (en) * | 1991-12-19 | 1993-07-13 | Sanyo Electric Co Ltd | Manufacture of semiconductor device |
| CN102593232A (en) * | 2012-03-19 | 2012-07-18 | 厦门大学 | PN solar cell with transverse structure and manufacturing method for solar cell |
| CN103390679A (en) * | 2012-05-09 | 2013-11-13 | 上海太阳能工程技术研究中心有限公司 | Thin film solar cell and manufacturing method thereof |
| CN103390660A (en) * | 2012-05-09 | 2013-11-13 | 上海太阳能工程技术研究中心有限公司 | Crystalline silicon solar cell and manufacturing method thereof |
| CN102903775A (en) * | 2012-10-24 | 2013-01-30 | 中国科学院半导体研究所 | crystalline silicon solar cell structure used for light condensation and laser energy transmission and manufacture method of crystalline silicon solar cell structure |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109166937A (en) * | 2018-09-04 | 2019-01-08 | 苏州钱正科技咨询有限公司 | A kind of silicon-based photovoltaic cells and its manufacturing method |
| CN109166937B (en) * | 2018-09-04 | 2020-06-05 | 江苏晶道新能源科技有限公司 | Silicon-based photovoltaic cell and manufacturing method thereof |
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