CN106656095A - Integrated crystal resonator and processing method thereof - Google Patents
Integrated crystal resonator and processing method thereof Download PDFInfo
- Publication number
- CN106656095A CN106656095A CN201611249049.6A CN201611249049A CN106656095A CN 106656095 A CN106656095 A CN 106656095A CN 201611249049 A CN201611249049 A CN 201611249049A CN 106656095 A CN106656095 A CN 106656095A
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- China
- Prior art keywords
- wafer base
- electrode
- oscillator
- crystal resonator
- resonator
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 239000013078 crystal Substances 0.000 title claims abstract description 20
- 238000003672 processing method Methods 0.000 title claims abstract description 10
- 239000002184 metal Substances 0.000 claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 11
- 239000000126 substance Substances 0.000 claims abstract description 7
- 230000000994 depressogenic effect Effects 0.000 claims description 18
- 239000000853 adhesive Substances 0.000 claims description 7
- 230000001070 adhesive effect Effects 0.000 claims description 7
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 claims description 6
- 239000010453 quartz Substances 0.000 claims description 6
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 2
- 238000005516 engineering process Methods 0.000 abstract description 4
- 238000000034 method Methods 0.000 abstract description 4
- 238000000227 grinding Methods 0.000 abstract description 2
- 238000005260 corrosion Methods 0.000 abstract 1
- 230000007797 corrosion Effects 0.000 abstract 1
- 230000000873 masking effect Effects 0.000 abstract 1
- 239000000919 ceramic Substances 0.000 description 6
- 238000004519 manufacturing process Methods 0.000 description 5
- 230000010354 integration Effects 0.000 description 2
- 238000012946 outsourcing Methods 0.000 description 2
- 230000000712 assembly Effects 0.000 description 1
- 238000000429 assembly Methods 0.000 description 1
- 238000009411 base construction Methods 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 239000007772 electrode material Substances 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 238000003701 mechanical milling Methods 0.000 description 1
- 238000004904 shortening Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H9/00—Networks comprising electromechanical or electro-acoustic devices; Electromechanical resonators
- H03H9/15—Constructional features of resonators consisting of piezoelectric or electrostrictive material
- H03H9/17—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator
- H03H9/19—Constructional features of resonators consisting of piezoelectric or electrostrictive material having a single resonator consisting of quartz
-
- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03H—IMPEDANCE NETWORKS, e.g. RESONANT CIRCUITS; RESONATORS
- H03H3/00—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators
- H03H3/007—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks
- H03H3/02—Apparatus or processes specially adapted for the manufacture of impedance networks, resonating circuits, resonators for the manufacture of electromechanical resonators or networks for the manufacture of piezoelectric or electrostrictive resonators or networks
Landscapes
- Physics & Mathematics (AREA)
- Acoustics & Sound (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Piezo-Electric Or Mechanical Vibrators, Or Delay Or Filter Circuits (AREA)
Abstract
The invention discloses an integrated crystal resonator and a processing method thereof. The crystal resonator comprises a resonator wafer base and electrodes. The resonator base is produced by carrying out masking and chemical corrosion on a piezoelectric material. Sunken areas are arranged on the upper surface and the lower surface of the resonator wafer base. An upper electrode and a lower electrode are respectively arranged in the sunken areas. The depths of the sunken areas are greater than the thickness of the upper electrode or the lower electrode. The upper electrode and the lower electrode are equipped with metal lead-out wires at two ends of the resonator wafer base. An upper cover plate and a lower base plate are respectively fixed above the resonator wafer base. Bonding pads are respectively arranged at two ends of the bottom surface of the lower base plate. The bonding pads are connected with the metal lead-out wire of the upper electrode or the lower electrode. The upper cover plate, the lower base plate and the resonator wafer base are produced by the same material. According to the integrated crystal resonator and the method, additional frequency shift can be avoided; a mechanical grinding technology is avoided; a yield is improved; and moreover, the problem that in the prior art, the processing efficiency and the consistency for a small product are relatively low due to adoption of a uniwafer processing method is avoided.
Description
Technical field
The present invention relates to crystal resonator, specifically a kind of integrated crystal resonator and its processing method.
Background technology
Existing quartz crystal resonator components, are processed into after chip using crystal or other piezoelectrics and are plated on two sides
Electrode, with ceramics or metal shell block as encapsulation, is assembled using conducting resinl and is electrically connected as oscillator.
Existing quartz resonator needs outsourcing base of ceramic and capping using piezoelectric chip and ceramics or metal shell assembling
Material；Quartz wafer has different expansion systems from base of ceramic, and in temperature change, oscillator produces stress, produces what is added
Frequency shift (FS)；Because former chip adds man-hour to adopt mechanical milling tech, the yield rate of the resonator wafer higher to frequency is low, separately
On the one hand piece method is added using monolithic, it is poor for the low and consistent property of Product processing efficiency of miniaturization.Due to base of ceramic work
The reason for skill and assembly technology, is manufacturing smaller size of 1.6 × 1.2mm, more difficult during the resonator of 1.2 × 1.0mm..
The content of the invention
The technical problem to be solved in the present invention is to provide a kind of integrated crystal resonator and its processing method, the resonator
Can improve production efficiency, reduces cost, reduce oscillator stress, reduce product size.
To solve above-mentioned technical problem, the present invention is adopted the following technical scheme that：
Integrated crystal resonator, including oscillator wafer base, electrode, described oscillator pedestal by piezoelectric by mask,
Chemical attack is made, and the upper surface of oscillator wafer base, lower surface are equipped with depressed area, be respectively equipped with depressed area Top electrode,
Bottom electrode；The depth of depressed area is more than Top electrode or the thickness of bottom electrode；Top electrode, bottom electrode are at the two ends of oscillator wafer base
It is respectively equipped with metal lead-outs；The top of oscillator wafer base is connected respectively upper cover plate, infrabasal plate；The bottom surface of infrabasal plate
Pad is respectively arranged at two ends with, pad is connected with the metal lead-outs of Top electrode or bottom electrode；Upper cover plate, infrabasal plate and oscillator chip
The material of pedestal is identical.
Using the present invention of above-mentioned technical proposal, compared with prior art, beneficial effect is：
Because upper cover plate, infrabasal plate and oscillator wafer base are material of the same race, with identical expansion system, in temperature change
Oscillator effectively reduces producing stress, it is to avoid produce additional frequency shift (FS)；Prior art wafer plus man-hour are avoided using machinery
Grinding technics, the yield rate of the higher resonator wafer of frequency is low；In addition, it is thus also avoided that prior art adds piece side using monolithic
Method, the problem poor for the low and consistent property of Product processing efficiency of miniaturization.
Further optimal technical scheme is as follows：
The edge of oscillator wafer base depressed area is connected upper cover plate, infrabasal plate respectively by high-temperature seal adhesive.
Described piezoelectric is piezoelectric quartz.
The processing method of above-mentioned integrated crystal resonator, comprises the steps of：
（1）It is large stretch of using piezoelectric, multiple upper surfaces, following table are disposably made with depression by mask and chemical attack
The oscillator wafer base in area；
（2）Top electrode is installed in the depressed area of upper surface, bottom electrode is installed in the depressed area of lower surface；
（3）The metal lead-outs of Top electrode, bottom electrode are drawn respectively by the two ends at the two ends of oscillator wafer base；
（4）By the edge of the upper surface of oscillator wafer base and the edge coated high-temperature seal adhesive of lower surface, lid is bonded with respectively
Plate, infrabasal plate；
（5）The metal lead-outs of Top electrode, bottom electrode are connected respectively with the pad of infrabasal plate bottom.
The processing method of above-mentioned integrated crystal resonator, its advantage is：
（1）With crystal or the resonator of other piezoelectric manufacture integrations, can once make on a piece of big piezoelectric
Multiple integrated oscillator base assemblies are made, is easy to improve production efficiency, reduced manufacturing cost.
（2）The technical program no longer adopts outsourcing base of ceramic, it is possible to reduce stock and procurement cycle, solves base material
In the under one's control and shortening order cycle, improve profit margin.
（3）Due to the oscillator base construction of integration, the use of wafer mounting process and conducting resinl is eliminated；Further subtract
Few processing cost.
（4）Improve the performance of product：Because there is useful being formed integrally of same material oscillator pedestal identical to expand
Coefficient, solves restricted problem of the pedestal to oscillator, can reduce resonant resistance and reduce some effects of the temperature to frequency.
Description of the drawings
Fig. 1 is the structural representation of the embodiment of the present invention；
Fig. 2 is the profile in Fig. 1 horizontal symmetry axis；
Description of reference numerals：1. upper cover plate；2. Top electrode；3. high-temperature seal adhesive；4. oscillator wafer base；5. bottom electrode；6. under
Substrate.
Specific embodiment
With reference to embodiment, the present invention is further illustrated.
Referring to Fig. 1, Fig. 2, integrated crystal resonator constitutes oscillator pedestal by piezoresistive material by oscillator wafer base 4, electrode
Material is made by mask, chemical attack, and the upper surface of oscillator wafer base 4, lower surface are equipped with depressed area, in depressed area respectively
It is provided with Top electrode 2, bottom electrode 5；The depth of depressed area is more than Top electrode 2 or the thickness of bottom electrode 5；Top electrode 2, bottom electrode 5 exist
Oscillator wafer base 4 is respectively arranged at two ends with metal lead-outs；The top of oscillator wafer base 4 be connected respectively upper cover plate 1,
Infrabasal plate 6；The metal lead-outs for being respectively arranged at two ends with pad, pad and Top electrode 2 or bottom electrode 5 of the bottom surface of infrabasal plate 6 connect
Connect；Upper cover plate 1, infrabasal plate 6 are identical with the material of oscillator wafer base 4.
The edge of the depressed area of oscillator wafer base 4 is connected upper cover plate 1, infrabasal plate 6 respectively by high-temperature seal adhesive 3.
Described piezoelectric is piezoelectric quartz.
The processing method of above-mentioned integrated crystal resonator, comprises the steps of：
（1）It is large stretch of using piezoelectric, multiple upper surfaces, following table are disposably made with depression by mask and chemical attack
The oscillator wafer base 4 in area；
（2）Top electrode 2 is installed in the depressed area of upper surface, bottom electrode 5 is installed in the depressed area of lower surface；
（3）The metal lead-outs of Top electrode 2, bottom electrode 5 are drawn respectively by the two ends at the two ends of oscillator wafer base 4；
（4）By the edge of the upper surface of oscillator wafer base 4 and the edge coated high-temperature seal adhesive 3 of lower surface, it is bonded with respectively
Cover plate 1, infrabasal plate 6；
（5）The metal lead-outs of Top electrode 2, bottom electrode 5 are connected respectively with the pad of the bottom of infrabasal plate 6.
The foregoing is only the specific embodiment of the present invention, but the protection not limited to this of the present invention, any this technology neck
The technical staff in domain the thinkable change being equal to the technical program technical characteristic or replacement, all cover the present invention guarantor
Within the scope of shield.
Claims (4)
1. integrated crystal resonator, including oscillator wafer base, electrode, it is characterised in that：Described oscillator pedestal is by piezoelectricity
Material is made by mask, chemical attack, and the upper surface of oscillator wafer base, lower surface are equipped with depressed area, divides in depressed area
It is not provided with Top electrode, bottom electrode；The depth of depressed area is more than Top electrode or the thickness of bottom electrode；Top electrode, bottom electrode are in oscillator
Wafer base is respectively arranged at two ends with metal lead-outs；The top of oscillator wafer base is connected respectively upper cover plate, infrabasal plate；
The bottom surface of infrabasal plate is respectively arranged at two ends with pad, and pad is connected with the metal lead-outs of Top electrode or bottom electrode；Upper cover plate, under
Substrate is identical with the material of oscillator wafer base.
2. crystal resonator according to claim 1, it is characterised in that：The edge of oscillator wafer base depressed area leads to respectively
Cross high-temperature seal adhesive to be connected upper cover plate, infrabasal plate.
3. crystal resonator according to claim 1, it is characterised in that：Described piezoelectric is piezoelectric quartz.
4. the processing method of the integrated crystal resonator described in a kind of claim 1, it is characterised in that：Comprise the steps of：
（1）It is large stretch of using piezoelectric, multiple upper surfaces, following table are disposably made with depression by mask and chemical attack
The oscillator wafer base in area；
（2）Top electrode is installed in the depressed area of upper surface, bottom electrode is installed in the depressed area of lower surface；
（3）The metal lead-outs of Top electrode, bottom electrode are drawn respectively by the two ends at the two ends of oscillator wafer base；
（4）By the edge of the upper surface of oscillator wafer base and the edge coated high-temperature seal adhesive of lower surface, lid is bonded with respectively
Plate, infrabasal plate；
（5）The metal lead-outs of Top electrode, bottom electrode are connected respectively with the pad of infrabasal plate bottom.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611249049.6A CN106656095A (en) | 2016-12-29 | 2016-12-29 | Integrated crystal resonator and processing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611249049.6A CN106656095A (en) | 2016-12-29 | 2016-12-29 | Integrated crystal resonator and processing method thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN106656095A true CN106656095A (en) | 2017-05-10 |
Family
ID=58836417
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611249049.6A Pending CN106656095A (en) | 2016-12-29 | 2016-12-29 | Integrated crystal resonator and processing method thereof |
Country Status (1)
| Country | Link |
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| CN (1) | CN106656095A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111384917A (en) * | 2018-12-29 | 2020-07-07 | 中芯集成电路（宁波）有限公司上海分公司 | Integrated structure of crystal resonator and control circuit and integration method thereof |
| CN111384922A (en) * | 2020-04-09 | 2020-07-07 | 中国电子科技集团公司第二十六研究所 | Miniaturized ladder type crystal filter |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003298381A (en) * | 2002-04-05 | 2003-10-17 | Ihi Aerospace Co Ltd | Crystal resonator unit |
| JP2007067795A (en) * | 2005-08-31 | 2007-03-15 | Kyocera Kinseki Corp | Structure of crystal vibrator |
| CN105207637A (en) * | 2014-05-30 | 2015-12-30 | 珠海东精大电子科技有限公司 | Preparation method of low-aged-rate 49S quartz crystal resonator |
| CN206283479U (en) * | 2016-12-29 | 2017-06-27 | 唐山国芯晶源电子有限公司 | Integrated crystal resonator |
-
2016
- 2016-12-29 CN CN201611249049.6A patent/CN106656095A/en active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2003298381A (en) * | 2002-04-05 | 2003-10-17 | Ihi Aerospace Co Ltd | Crystal resonator unit |
| JP2007067795A (en) * | 2005-08-31 | 2007-03-15 | Kyocera Kinseki Corp | Structure of crystal vibrator |
| CN105207637A (en) * | 2014-05-30 | 2015-12-30 | 珠海东精大电子科技有限公司 | Preparation method of low-aged-rate 49S quartz crystal resonator |
| CN206283479U (en) * | 2016-12-29 | 2017-06-27 | 唐山国芯晶源电子有限公司 | Integrated crystal resonator |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111384917A (en) * | 2018-12-29 | 2020-07-07 | 中芯集成电路（宁波）有限公司上海分公司 | Integrated structure of crystal resonator and control circuit and integration method thereof |
| CN111384917B (en) * | 2018-12-29 | 2023-09-22 | 中芯集成电路（宁波）有限公司上海分公司 | Integrated structure of crystal resonator and control circuit and integrated method thereof |
| CN111384922A (en) * | 2020-04-09 | 2020-07-07 | 中国电子科技集团公司第二十六研究所 | Miniaturized ladder type crystal filter |
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Application publication date: 20170510 |