CN106656054B - High-linearity Doherty power amplifier based on active non-Foster circuit - Google Patents
High-linearity Doherty power amplifier based on active non-Foster circuit Download PDFInfo
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- CN106656054B CN106656054B CN201610898618.3A CN201610898618A CN106656054B CN 106656054 B CN106656054 B CN 106656054B CN 201610898618 A CN201610898618 A CN 201610898618A CN 106656054 B CN106656054 B CN 106656054B
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/02—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation
- H03F1/0205—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers
- H03F1/0288—Modifications of amplifiers to raise the efficiency, e.g. gliding Class A stages, use of an auxiliary oscillation in transistor amplifiers using a main and one or several auxiliary peaking amplifiers whereby the load is connected to the main amplifier using an impedance inverter, e.g. Doherty amplifiers
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F1/00—Details of amplifiers with only discharge tubes, only semiconductor devices or only unspecified devices as amplifying elements
- H03F1/32—Modifications of amplifiers to reduce non-linear distortion
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- H—ELECTRICITY
- H03—ELECTRONIC CIRCUITRY
- H03F—AMPLIFIERS
- H03F3/00—Amplifiers with only discharge tubes or only semiconductor devices as amplifying elements
- H03F3/20—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers
- H03F3/21—Power amplifiers, e.g. Class B amplifiers, Class C amplifiers with semiconductor devices only
Abstract
The invention relates to a high-linearity Doherty power amplifier based on an active non-Foster circuit, which comprises a main power amplifier module and an auxiliary power amplifier module which are connected in parallel, wherein the input ends of the main power amplifier module and the auxiliary power amplifier module are connected with the total input end of a Doherty power amplifier through a power divider; a phase shift module is connected in series between the input end of the auxiliary power amplification module and the main input end; the main power amplifier output end is compensated by the phase shift module and then synthesized with the auxiliary power amplifier output end to form a total output, and an active non-Foster circuit is also connected in series between the auxiliary power amplifier module input end and the phase shift module and is used for adjusting the input capacitance of the auxiliary power amplifier field effect tube. The invention adds an active non-Foster circuit structure into an input source traction matching circuit of an auxiliary power amplifier in the traditional Doherty power amplifier to realize a high-linearity Doherty power amplifier; by changing the active non-Foster circuit, the input capacitance value of the auxiliary power amplifier can be adjusted, and AM-PM inhibition of the auxiliary power amplifier is realized.
Description
Technical Field
The invention relates to the field of microwave circuits, in particular to a high-linearity Doherty power amplifier based on an active non-Foster negative capacitance output technology.
Background
For complex modulation modes in modern wireless communication, many modulation modes have higher and higher requirements on peak-to-average power ratio, and high linearity of a power amplifier is a key index. In order to obtain higher linearity, methods such as power amplifier backspacing and predistortion are generally adopted, the backspacing technology obtains high linearity at the cost of sacrificing efficiency, the predistortion technology needs a large number of digital circuits for matching, digital and high-frequency signal crosstalk is serious, and the structure is complex.
In the aspect of Doherty linearity research, some linear technologies are adopted, for example, broadband inverse phase shift, composite left-right-handed material and asymmetric Doherty power amplifier structures, but the structures of the methods are complex, which is not beneficial to circuit system integration, and meanwhile, parameters cannot be flexibly changed in the test process, which limits the use of power amplifiers in the actual wireless communication system.
The active non-foster circuit enables the output of the non-foster circuit to present negative capacitance characteristics by adjusting the direct current bias of the transistor and the peripheral matching circuit. By utilizing the characteristic, the structure is placed at the front end of the power amplifier, the characteristics of the input capacitor and the input resistor of the FET power amplifier tube can be adjusted, and the generation of smaller distortion is realized, so that the active non-Foster circuit adopted in a wireless communication power amplifier system has wide application prospect.
Disclosure of Invention
In view of the above, the present invention is directed to a high linearity doherty power amplifier based on an active non-foster circuit.
The invention aims to realize the technical scheme that a high-linearity Doherty power amplifier based on an active non-Foster circuit comprises a main power amplifier module 1 and an auxiliary power amplifier module 2 which are connected in parallel, wherein the input ends of the main power amplifier module 1 and the auxiliary power amplifier module 2 are connected with the total input end of the Doherty power amplifier through a power divider; a phase shift module 3 is connected in series between the input end and the main input end of the auxiliary power amplification module 2; the main power amplifier output end is compensated by the phase shift module 3 and then synthesized with the auxiliary power amplifier output end to form a total output, and an active non-Foster circuit 4 is also connected in series between the input end of the auxiliary power amplifier module 2 and the phase shift module 3 and is used for adjusting the input capacitance of the auxiliary power amplifier field effect tube.
Furthermore, the phase shift module 3 has a 90 ° phase shift, so that a 90 ° phase difference exists between two parallel paths of the main power amplifier module and the auxiliary power amplifier module.
Further, the Doherty power amplifier is laid on a dielectric substrate having a relative dielectric constant εrIn the range of 2 to 5; loss tangent tg sigma less than or equal to 10-3(ii) a The thickness h is 0.254 mm;
furthermore, the active non-Foster circuit comprises a first triode 11, a second triode 12, resistors R1-R5 and a capacitor CLThe emitting electrode of the first triode is connected with a power supply, and the collecting electrode of the first triode is respectively connected with a power supply V through a resistor R5CCAnd a capacitor CLThe base electrode of the first triode is connected with the collector electrode of the second triode through a resistor R3The collector of the second triode is connected with the capacitor C through the resistor R4LAnd a power supply VCCThe base electrode of the first triode is grounded through a resistor R2, the emitter electrode of the second triode is grounded through a resistor R1, and the base electrode of the second triode is connected with a capacitor CLAnd (4) connecting.
Due to the adoption of the technical scheme, the invention has the following advantages:
the invention adds an active non-Foster circuit structure into an input source traction matching circuit of an auxiliary power amplifier in the traditional Doherty power amplifier to realize the high-linearity Doherty power amplifier; the input capacitance value of the auxiliary power amplifier can be adjusted by changing the active non-Foster circuit, so that AM-PM inhibition of the auxiliary power amplifier is realized; meanwhile, the gain of the auxiliary power amplifier can be controlled, and the gain compression distortion output by the main power amplifier is compensated; the microwave oven is small in size, easy to integrate with other microwave circuits, and strong in practicability and application prospect.
Drawings
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be further described in detail with reference to the accompanying drawings, in which:
FIG. 1 is a circuit diagram of a high linearity Doherty power amplifier based on an active non-Foster circuit in accordance with the present invention;
fig. 2 is a structural diagram of an active non-foster circuit of a high linearity doherty power amplifier based on the active non-foster circuit of the present invention.
Detailed Description
Preferred embodiments of the present invention will be described in detail below with reference to the accompanying drawings.
As shown in fig. 1, the invention discloses a high-linearity doherty power amplifier based on an active non-foster circuit, which comprises a main power amplifier module 1 and an auxiliary power amplifier module 2 which are connected in parallel, wherein the input ends of the main power amplifier module 1 and the auxiliary power amplifier module 2 are connected with the total input end of the doherty power amplifier through a power divider; a phase shift module 3 is connected in series between the input end and the main input end of the auxiliary power amplification module 2; the main power amplifier output end is compensated by the phase shift module 3 and then synthesized with the auxiliary power amplifier output end to form a total output, and the phase shift module 3 has 90-degree phase shift, so that a 90-degree phase difference is formed between two parallel paths of the main power amplifier module and the auxiliary power amplifier module. And an active non-Foster circuit 4 is also connected in series between the input end of the auxiliary power amplification module 2 and the phase shift module 3 and is used for adjusting the input capacitance of the auxiliary power amplification field effect tube.
The active non-Foster circuit is enabled to present a negative capacitance characteristic by adjusting the direct current bias voltage and the peripheral circuit of the active non-Foster circuit, so that the input capacitance of the auxiliary power amplifier field effect tube is adjusted, the function of restraining the AM-PM distortion of the auxiliary power amplifier is realized, and the linearity performance of the whole Doherty power amplifier is improved.
The high linearity Doherty power amplifier based on the active non-Foster structure is laid on a dielectric substrate, and the relative dielectric constant epsilon of the dielectric substraterIn the range of 2 to 5; loss tangent tg sigma less than or equal to 10-3(ii) a The thickness h is 0.254 mm.
The active non-Foster structure includes two transistors, two resistors and a capacitor. The output capacitance adjustment of the whole active non-Foster circuit is realized by changing the resistance and the capacitance value.
As shown in fig. 2, the active non-foster structure 4 comprises two transistors, two resistors and a capacitor, 11 is a common base transistor structure, and 12 is a common emitter transistor structure.
The active non-Foster circuit transistor adopts a 2SC4885 transistor of NEC company, and the operating frequency is adjusted to be 2.5-2.7GHz, and the direct current bias voltage is adjusted to be 12-13V. The output capacitance of the active non-foster circuit may be obtained by the following equation:
Cin＝-(R1/R2)CL
the Doherty power amplifier tube adopts MRF8P26080H power tube of Freescale company, and V of main power amplifier and auxiliary power amplifierDS28V, V of main power amplifierGS2.7V, V of auxiliary power amplifierGSIt was 2.31V.
The high-linearity Doherty power amplifier based on the active non-Foster circuit adopts the active non-Foster circuit structure to participate in the matching of an input circuit of an auxiliary power amplifier, and realizes the adjustment of the input capacitance of an auxiliary power amplifier FET by changing the active non-Foster circuit; under the high-power condition, the gain expansion of the auxiliary power amplifier is realized by adjusting the active non-Foster, and the gain compression distortion of the main power amplifier is compensated.
Finally, it is noted that the above-mentioned preferred embodiments illustrate rather than limit the invention, and that, although the invention has been described in detail with reference to the above-mentioned preferred embodiments, it will be understood by those skilled in the art that various changes in form and detail may be made therein without departing from the scope of the invention as defined by the appended claims.
Claims (3)
1. A high linearity Doherty power amplifier based on an active non-Foster circuit is characterized in that: the power amplifier comprises a main power amplifier module (1) and an auxiliary power amplifier module (2) which are connected in parallel, wherein the input ends of the main power amplifier module (1) and the auxiliary power amplifier module (2) are connected with the total input end of a Doherty power amplifier through a power divider; a phase shift module (3) is connected in series between the input end of the auxiliary power amplifier module (2) and the main input end; the main power amplifier output end becomes the total output after compensating through phase shift module (3) and synthesizing with supplementary power amplifier output, its characterized in that: an active non-Foster circuit (4) is also connected in series between the input end of the auxiliary power amplification module (2) and the phase shift module (3) and is used for adjusting the input capacitance of the auxiliary power amplification field effect tube; the active non-Foster circuit comprises a first triode (11), a second triode (12), resistors R1-R5 and a capacitor CLThe emitting electrode of the first triode is connected with a power supply, and the collecting electrode of the first triode is respectively connected with a power supply V through a resistor R5CCAnd a capacitor CLThe base electrode of the first triode is connected with the collector electrode of the second triode through a resistor R3, and the collector electrode of the second triode is respectively connected with a capacitor C through a resistor R4LAnd a power supply VCCThe base electrode of the first triode is grounded through a resistor R2, the emitter electrode of the second triode is grounded through a resistor R1, and the base electrode of the second triode is connected with a capacitor CLAnd (4) connecting.
2. The active non-foster circuit based high linearity doherty power amplifier of claim 1 wherein: the phase shift module (3) has 90-degree phase shift, so that a 90-degree phase difference is formed between two parallel paths of the main power amplifier module and the auxiliary power amplifier module.
3. The active non-foster circuit based high linearity doherty power amplifier of claim 1 wherein: the Doherty power amplifier is laid on a dielectric substrate, and the relative dielectric constant epsilon of the dielectric substraterIn the range of 2 to 5; loss tangent tg sigma less than or equal to 10-3(ii) a The thickness h is 0.254 mm.
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| CN112968675A (en) * | 2021-01-28 | 2021-06-15 | 重庆邮电大学 | Pre-distortion Doherty power amplifier based on variable capacitance diode loading composite left-right-hand transmission line |
| CN112953402A (en) * | 2021-03-22 | 2021-06-11 | 重庆邮电大学 | 5G millimeter wave Doherty power amplifier based on super surface |
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| CN105048971B (en) * | 2015-09-11 | 2019-03-08 | 上海无线电设备研究所 | High efficiency Doherty power amplifier implementation method based on switched resonance structure |
| CN105871341B (en) * | 2016-03-24 | 2018-09-28 | 重庆邮电大学 | The high linearity Doherty power amplifier realized using double negative ferroelectric materials |
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