CN106654859A - 一种湿法腐蚀方法 - Google Patents

一种湿法腐蚀方法 Download PDF

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CN106654859A
CN106654859A CN201610841527.6A CN201610841527A CN106654859A CN 106654859 A CN106654859 A CN 106654859A CN 201610841527 A CN201610841527 A CN 201610841527A CN 106654859 A CN106654859 A CN 106654859A
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gaas
corrosive liquid
corrosion
algaas
etching method
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CN106654859B (zh
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周立
潘之炜
吴涛
李瑞彬
谭少阳
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Suzhou Everbright Photonics Co Ltd
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Suzhou Everbright Photonics Technology Co Ltd
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
    • H01S5/00—Semiconductor lasers
    • H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
    • H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
    • H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
    • H01S5/2206—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials
    • H01S5/221—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on III-V materials containing aluminium

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  • Physics & Mathematics (AREA)
  • Geometry (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Electromagnetism (AREA)
  • Optics & Photonics (AREA)
  • Weting (AREA)

Abstract

本发明公开了一种应用于高Al组分AlGaAs‑GaAs脊台垂直侧壁形貌工艺的湿法腐蚀方法，其采用的腐蚀液配比为H3PO4:H2O2:H2O＝1:10:1，且用于GaAs/Al0.7Ga0.3As脊台材料腐蚀中；在室温环境下完成腐蚀。本发明选取H3PO4:H2O2腐蚀液，采用本发明的H2O2浓度，同样能够达到消除AlGaAs层凹陷的效果，而且这个浓度的H2O2不会带来腐蚀液粘稠导致的腐蚀深度均匀性不易控制的问题。

Description

一种湿法腐蚀方法
技术领域
本发明涉及一种湿法腐蚀方法，尤其涉及一种应用于高Al组分AlGaAs-GaAs脊台垂直侧壁形貌工艺的湿法腐蚀方法。
背景技术
理想半导体激光器的脊台形貌为90°，然而当半导体激光器采用GaAs作为P面欧姆接触曾，高Al组分AlGaAs材料作为电子阻挡层和波导层时，由于高Al组分AlGaAs在一般腐蚀液中的侧向腐蚀速率大于GaAs，容易在腐蚀后形成GaAs凸出、AlGaAs凹陷的屋檐状形貌。这样的屋檐状脊台形貌将影响SiO2钝化保护，易造成漏电短路等异常情况，如申请号为CN201310406295.8，申请日为2013-09-09，公告号为CN103531458A，公告日为2014-01-22的《一种利用两步法对GaAs基材料进行湿法刻蚀的方法》。
提高H3PO4:H2O2腐蚀液中的H3PO4浓度，可以减缓AlGaAs侧向凹陷情况，但是H3PO4浓度提高后，腐蚀液非常粘稠，不利于大尺寸waf的腐蚀深度均匀性控制。
发明内容
为了能够达到消除AlGaAs层凹陷的效果，同时解决腐蚀液粘稠导致的腐蚀深度均匀性不易控制的技术问题，本发明提供一种应用于高Al组分AlGaAs-GaAs脊台垂直侧壁形貌工艺的湿法腐蚀方法。
本发明的解决方案是：一种应用于高Al组分AlGaAs-GaAs脊台垂直侧壁形貌工艺的湿法腐蚀方法，其采用的腐蚀液配比为H3PO4:H2O2:H2O＝1:10:1，且用于GaAs/Al0.7Ga0.3As脊台材料腐蚀中；在室温环境下完成腐蚀。
作为上述方案的进一步改进，腐蚀速率为120～160nm/s。
本发明选取H3PO4:H2O2腐蚀液，采用本发明的H2O2浓度，同样能够达到消除AlGaAs层凹陷的效果，而且这个浓度的H2O2不会带来腐蚀液粘稠导致的腐蚀深度均匀性不易控制的问题。
附图说明
图1为采用常规腐蚀液腐蚀H2SO4:H2O2:H2O＝1:1:20时，腐蚀后的侧壁形貌示意图。
图2为采用本发明的应用于高Al组分AlGaAs-GaAs脊台垂直侧壁形貌工艺的湿法腐蚀方法腐蚀后的侧壁形貌示意图。
具体实施方式
为了使本发明的目的、技术方案及优点更加清楚明白，以下结合附图及实施例，对本发明进行进一步详细说明。应当理解，此处所描述的具体实施例仅仅用以解释本发明，并不用于限定本发明。
在GaAs半导体激光器脊台湿法腐蚀工艺中，半导体脊台采用上层0.3～0.5μmGaAs材料、以及下层0.6～1μm的Al0.7Ga0.3As材料时，使用常规腐蚀液腐蚀，如H2SO4:H2O2:H2O＝1:1:20时，腐蚀后侧壁形貌如图1所示，Al0.7Ga0.3As材料相对GaAs材料侧向钻蚀情况严重，脊台整体呈屋檐状。
本发明应用于高Al组分AlGaAs-GaAs脊台垂直侧壁形貌工艺的湿法腐蚀方法，采用的腐蚀液配比为H3PO4:H2O2:H2O＝1:10:1，且用于GaAs/Al0.7Ga0.3As脊台材料腐蚀中，在室温环境下完成腐蚀。H3PO4:H2O2:H2O＝1:10:1的配比也得到了试验的验证，在室温环境下，腐蚀速率约为120～160nm/s，腐蚀完成后，脊台侧壁形貌如图2所示，GaAs侧壁垂直，Al0.7Ga0.3As侧壁呈正台面，GaAs材料和Al0.7Ga0.3As材料的侧向腐蚀量基本一致，这样的脊台形貌对SiO2钝化无影响，极大减小漏电短路等异常发生。
需要说明的是，H3PO4:H2O2:H2O＝1:10:1的配比并非是通过无限次试验就能轻而易举的得到，因为不同的配比，整体表现的性能差异很大，没办法从试验数据上简单归纳与总结。
以上所述仅为本发明的较佳实施例而已，并不用以限制本发明，凡在本发明的精神和原则之内所作的任何修改、等同替换和改进等，均应包含在本发明的保护范围之内。

Claims (2)

1.一种应用于高Al组分AlGaAs-GaAs脊台垂直侧壁形貌工艺的湿法腐蚀方法，其特征在于：其采用的腐蚀液配比为H3PO4:H2O2:H2O＝1:10:1，且用于GaAs/Al0.7Ga0.3As脊台材料腐蚀中；在室温环境下完成腐蚀。
2.如权利要求1所述的应用于高Al组分AlGaAs-GaAs脊台垂直侧壁形貌工艺的湿法腐蚀方法，其特征在于：腐蚀速率为120～160nm/s。
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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6252725B1 (en) * 1998-08-18 2001-06-26 Trw Inc. Semiconductor micro epi-optical components
CN101197490A (zh) * 2006-12-07 2008-06-11 中国科学院半导体研究所 双区分布布拉格反射镜半导体激光器结构和制备方法
CN101667716A (zh) * 2008-09-03 2010-03-10 中国科学院半导体研究所 一种双面键合长波长垂直腔面发射激光器及其制作方法
CN102498542A (zh) * 2009-09-04 2012-06-13 住友化学株式会社 半导体基板、场效应晶体管、集成电路和半导体基板的制造方法

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6252725B1 (en) * 1998-08-18 2001-06-26 Trw Inc. Semiconductor micro epi-optical components
CN101197490A (zh) * 2006-12-07 2008-06-11 中国科学院半导体研究所 双区分布布拉格反射镜半导体激光器结构和制备方法
CN101667716A (zh) * 2008-09-03 2010-03-10 中国科学院半导体研究所 一种双面键合长波长垂直腔面发射激光器及其制作方法
CN102498542A (zh) * 2009-09-04 2012-06-13 住友化学株式会社 半导体基板、场效应晶体管、集成电路和半导体基板的制造方法

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罗跃川 等: ""GaAs/AlGaAs 多层膜刻蚀的陡直度"", 《信息与电子工程》 *
高伟 等: ""GaAs、GaAlAs晶片的化学择优腐蚀"", 《半导体光电》 *

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