CN106653613A - Method for preparing high-mobility indium-yttrium-oxide thin film transistor in low-temperature liquid-phase manner - Google Patents
Method for preparing high-mobility indium-yttrium-oxide thin film transistor in low-temperature liquid-phase manner Download PDFInfo
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- CN106653613A CN106653613A CN201610821733.0A CN201610821733A CN106653613A CN 106653613 A CN106653613 A CN 106653613A CN 201610821733 A CN201610821733 A CN 201610821733A CN 106653613 A CN106653613 A CN 106653613A
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- indium
- yttrium
- thin film
- film transistor
- tft
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- 239000010409 thin film Substances 0.000 title claims abstract description 58
- 238000000034 method Methods 0.000 title claims abstract description 46
- 239000007791 liquid phase Substances 0.000 title claims abstract description 23
- ZMKRJDCTUNZSFT-UHFFFAOYSA-N [O--].[O--].[O--].[Y+3].[In+3] Chemical compound [O--].[O--].[O--].[Y+3].[In+3] ZMKRJDCTUNZSFT-UHFFFAOYSA-N 0.000 title abstract 8
- 239000002243 precursor Substances 0.000 claims abstract description 30
- 239000010408 film Substances 0.000 claims abstract description 28
- 238000000137 annealing Methods 0.000 claims abstract description 17
- 239000004065 semiconductor Substances 0.000 claims abstract description 16
- 150000002471 indium Chemical class 0.000 claims abstract description 5
- 239000002904 solvent Substances 0.000 claims abstract description 5
- 150000003746 yttrium Chemical class 0.000 claims abstract description 5
- -1 indium yttrium oxygen Chemical compound 0.000 claims description 72
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 10
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 9
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 9
- 238000010438 heat treatment Methods 0.000 claims description 9
- 238000013019 agitation Methods 0.000 claims description 7
- LBGSDOMRVQPKJM-UHFFFAOYSA-N indium yttrium Chemical compound [Y][In] LBGSDOMRVQPKJM-UHFFFAOYSA-N 0.000 claims description 7
- 229910052760 oxygen Inorganic materials 0.000 claims description 7
- 239000001301 oxygen Substances 0.000 claims description 7
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 6
- MRELNEQAGSRDBK-UHFFFAOYSA-N lanthanum(3+);oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[La+3].[La+3] MRELNEQAGSRDBK-UHFFFAOYSA-N 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 4
- 229910052737 gold Inorganic materials 0.000 claims description 4
- 239000010931 gold Substances 0.000 claims description 4
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 4
- 229910052709 silver Inorganic materials 0.000 claims description 4
- 239000004332 silver Substances 0.000 claims description 4
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 3
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 3
- VBXWCGWXDOBUQZ-UHFFFAOYSA-K diacetyloxyindiganyl acetate Chemical compound [In+3].CC([O-])=O.CC([O-])=O.CC([O-])=O VBXWCGWXDOBUQZ-UHFFFAOYSA-K 0.000 claims description 3
- 229910052750 molybdenum Inorganic materials 0.000 claims description 3
- 239000011733 molybdenum Substances 0.000 claims description 3
- 239000000377 silicon dioxide Substances 0.000 claims description 3
- OBOSXEWFRARQPU-UHFFFAOYSA-N 2-n,2-n-dimethylpyridine-2,5-diamine Chemical compound CN(C)C1=CC=C(N)C=N1 OBOSXEWFRARQPU-UHFFFAOYSA-N 0.000 claims description 2
- NGDQQLAVJWUYSF-UHFFFAOYSA-N 4-methyl-2-phenyl-1,3-thiazole-5-sulfonyl chloride Chemical compound S1C(S(Cl)(=O)=O)=C(C)N=C1C1=CC=CC=C1 NGDQQLAVJWUYSF-UHFFFAOYSA-N 0.000 claims description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 2
- XURCIPRUUASYLR-UHFFFAOYSA-N Omeprazole sulfide Chemical compound N=1C2=CC(OC)=CC=C2NC=1SCC1=NC=C(C)C(OC)=C1C XURCIPRUUASYLR-UHFFFAOYSA-N 0.000 claims description 2
- 238000003618 dip coating Methods 0.000 claims description 2
- 238000001548 drop coating Methods 0.000 claims description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 claims description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052736 halogen Inorganic materials 0.000 claims description 2
- 150000002367 halogens Chemical class 0.000 claims description 2
- 238000007641 inkjet printing Methods 0.000 claims description 2
- NFSAPTWLWWYADB-UHFFFAOYSA-N n,n-dimethyl-1-phenylethane-1,2-diamine Chemical compound CN(C)C(CN)C1=CC=CC=C1 NFSAPTWLWWYADB-UHFFFAOYSA-N 0.000 claims description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- 238000010422 painting Methods 0.000 claims description 2
- 238000004528 spin coating Methods 0.000 claims description 2
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 claims description 2
- 229910000337 indium(III) sulfate Inorganic materials 0.000 claims 1
- XGCKLPDYTQRDTR-UHFFFAOYSA-H indium(iii) sulfate Chemical compound [In+3].[In+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O XGCKLPDYTQRDTR-UHFFFAOYSA-H 0.000 claims 1
- ZEWMZYKTKNUFEF-UHFFFAOYSA-N indium;oxozinc Chemical compound [In].[Zn]=O ZEWMZYKTKNUFEF-UHFFFAOYSA-N 0.000 claims 1
- 229910000347 yttrium sulfate Inorganic materials 0.000 claims 1
- RTAYJOCWVUTQHB-UHFFFAOYSA-H yttrium(3+);trisulfate Chemical compound [Y+3].[Y+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O RTAYJOCWVUTQHB-UHFFFAOYSA-H 0.000 claims 1
- 239000000758 substrate Substances 0.000 abstract description 5
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 3
- 238000004377 microelectronic Methods 0.000 abstract description 2
- 238000005303 weighing Methods 0.000 abstract description 2
- 230000007547 defect Effects 0.000 abstract 1
- 238000000151 deposition Methods 0.000 abstract 1
- 239000000243 solution Substances 0.000 description 26
- 238000002360 preparation method Methods 0.000 description 14
- 229910052738 indium Inorganic materials 0.000 description 12
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 12
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 9
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 8
- 230000015572 biosynthetic process Effects 0.000 description 8
- 229910052733 gallium Inorganic materials 0.000 description 8
- 206010001497 Agitation Diseases 0.000 description 6
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 4
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 4
- 229910021417 amorphous silicon Inorganic materials 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 229910003437 indium oxide Inorganic materials 0.000 description 3
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 230000003647 oxidation Effects 0.000 description 3
- 238000007254 oxidation reaction Methods 0.000 description 3
- 239000011787 zinc oxide Substances 0.000 description 3
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- 150000001805 chlorine compounds Chemical class 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- LKRFCKCBYVZXTC-UHFFFAOYSA-N dinitrooxyindiganyl nitrate Chemical class [In+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O LKRFCKCBYVZXTC-UHFFFAOYSA-N 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- GRPQBOKWXNIQMF-UHFFFAOYSA-N indium(3+) oxygen(2-) tin(4+) Chemical compound [Sn+4].[O-2].[In+3] GRPQBOKWXNIQMF-UHFFFAOYSA-N 0.000 description 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 description 2
- 229920005591 polysilicon Polymers 0.000 description 2
- 238000011160 research Methods 0.000 description 2
- 238000003786 synthesis reaction Methods 0.000 description 2
- PCMOZDDGXKIOLL-UHFFFAOYSA-K yttrium chloride Chemical class [Cl-].[Cl-].[Cl-].[Y+3] PCMOZDDGXKIOLL-UHFFFAOYSA-K 0.000 description 2
- JUWHRRAPBUAYTA-UHFFFAOYSA-K yttrium(3+);triacetate Chemical class [Y+3].CC([O-])=O.CC([O-])=O.CC([O-])=O JUWHRRAPBUAYTA-UHFFFAOYSA-K 0.000 description 2
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 239000007983 Tris buffer Substances 0.000 description 1
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 1
- APUGIHICMSAKGR-UHFFFAOYSA-N [Y]=O Chemical compound [Y]=O APUGIHICMSAKGR-UHFFFAOYSA-N 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 238000002425 crystallisation Methods 0.000 description 1
- 230000008025 crystallization Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000006193 liquid solution Substances 0.000 description 1
- 238000001755 magnetron sputter deposition Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 230000035800 maturation Effects 0.000 description 1
- MBBQAVVBESBLGH-UHFFFAOYSA-N methyl 4-bromo-3-hydroxybutanoate Chemical compound COC(=O)CC(O)CBr MBBQAVVBESBLGH-UHFFFAOYSA-N 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 239000012071 phase Substances 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 238000009738 saturating Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 229910052727 yttrium Inorganic materials 0.000 description 1
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 1
- BXJPTTGFESFXJU-UHFFFAOYSA-N yttrium(3+);trinitrate Chemical class [Y+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O BXJPTTGFESFXJU-UHFFFAOYSA-N 0.000 description 1
- 229910052725 zinc Inorganic materials 0.000 description 1
- 239000011701 zinc Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/66007—Multistep manufacturing processes
- H01L29/66969—Multistep manufacturing processes of devices having semiconductor bodies not comprising group 14 or group 13/15 materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
- H01L29/247—Amorphous materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices adapted for rectifying, amplifying, oscillating or switching, or capacitors or resistors with at least one potential-jump barrier or surface barrier, e.g. PN junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
- H01L29/78693—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate the semiconducting oxide being amorphous
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention belongs to the field of semiconductor and microelectronic devices, and particularly relates to a method for preparing a high-mobility indium-yttrium-oxide thin film transistor in a low-temperature liquid-phase manner. The method comprises the following steps of weighing soluble indium salt and yttrium salt, measuring a solvent, preparing indium-yttrium-oxide precursor solution, applying the indium-yttrium-oxide precursor solution on a substrate on which a dielectric layer/gate film is applied for forming an indium-yttrium-oxide precursor film, and then performing light wave annealing with a certain power at a certain temperature by a certain time period, namely obtaining an indium-yttrium-oxide transparent semiconductor film; then depositing a source electrode and a drain electrode, thereby obtaining the indium-yttrium-oxide thin film transistor. The indium-yttrium-oxide thin film transistor which is prepared according to the method of the invention has high performance and has an important application prospect in the information field and electronic field. A process according to the invention can prevent defects such as long process period and high equipment price in a common high-temperature solution process. Furthermore the method is suitable for industrial large-scale production.
Description
Technical field
The invention belongs to semiconductor and field of microelectronic devices, more particularly to a kind of low temperature liquid phase prepares high mobility indium yttrium
The method of oxygen thin film transistor (TFT), indium yttrium oxygen thin film transistor (TFT) has important application prospect in fields such as information electronics.
Background technology
Into after 21st century, display device has become people and obtains information, enters the primary terminal of row information exchange
Equipment, thin film transistor (TFT)（Thin Film Transistor）As active matrix driving technology Primary Component to the whole of display device
Body performance has very important impact.Up to the present, development maturation the most is amorphous silicon film transistor and polysilicon
Thin film transistor (TFT).But the shortcoming of amorphous silicon transistor be carrier mobility it is low (<1cm2/ Vs), it is difficult to meet organic light emission
The requirement that diode current drives, while a-Si:H transistors easily receive illumination effect so that job stability is poor；Polysilicon
Production of Transistor technics comparing is complicated, relatively costly, while the restriction of Stimulated Light crystallization process, in large size relatively difficult.Jing
Study after for many years, the shortcoming of silicon-based transistor is difficult to be improved, and using non-crystal oxide semiconductor as the thin of channel layer
Film transistor is developed rapidly, and the advantage of non-crystal oxide transistor is：Carrier mobility is higher, device synthesis
Excellent performance, mature preparation process, above-mentioned advantage makes it have very big using value.
2004, the Hosono groups of Tokyo Institute of Technology were in famous academic journal《Nature》On delivered amorphous
Indium gallium zinc oxygen thin film transistor (TFT).The carrier mobility of the indium gallium zinc oxygen transistor is 10 cm2/ Vs, switching current ratio reaches
106.Since then, the multicomponent amorphous oxide based on amorphous indium gallium zinc oxygen causes the extensive concern of scientific research personnel.Therefore
Study high performance indium yttrium oxygen thin film transistor (TFT) to be extremely important.
The method for preparing indium oxide thin film transistor at present is varied, mainly includes that vapor phase method and liquid phase method two are big
Class.For example, the method such as magnetron sputtering, electron beam evaporation, ald and chemical vapor deposition is all used to prepare indium oxide
Base film.However, these gas phase process generally need vacuum environment, the complexity of equipment is increased, improve cost.In recent years,
Liquid phase process increasingly causes extensive concern, has obtained rapid development, such as sol-gel process, spray pyrolysis etc..Closely
The research report of the liquid phase method synthesis oxidation indium-based film developed over year has many.For example, Publication No. CN103779425B
Chinese invention patent discloses the preparation method of a kind of indium gallium zinc oxide semiconductive thin film and indium gallium zinc thin film transistor (TFT), including
a）The tetrahydrofuran for preparing the ethanol solution, the ethanol solution of zinc acetylacetonate hydrate and Indium Tris acetylacetonate of acetylacetone,2,4-pentanedione gallium is molten
Liquid；b）Three kinds of solution are carried out to be mixed and stirred for uniform, the precursor solution of prepared indium gallium zinc oxide；c）By precursor solution
It is deposited on baseplate material and is made annealing treatment, indium gallium zinc oxide semiconductive thin film is obtained.Can be with by foregoing invention patent
Find out, although liquid phase method can prepare the indium oxide thin film transistor of superior performance, but liquid phase method generally needs high temperature（It is higher than
400℃）Annealing, can just promote precursor thin-film to decompose and be densified, and form fine and close oxidation indium-based film.Therefore, one is found
Kind new low temperature liquid phase technology of preparing, for large-scale application of the indium yttrium oxygen thin film transistor (TFT) in various fields be it is particularly important and
Urgent.
The content of the invention
It is an object of the invention to provide a kind of low temperature liquid phase preparation method of high mobility indium yttrium oxygen thin film transistor (TFT), real
Prepared by the simple and efficient of existing indium yttrium oxygen thin film transistor (TFT), it is easier to large-scale production and application.The innovative point of the present invention mainly exists
In：Develop new low temperature light wave method liquid phase and prepare high mobility indium yttrium oxygen thin film transistor (TFT).
Technical scheme, specifically includes following steps：
(1) indium yttrium oxygen precursor solution is prepared：The indium salts and yttrium salt of solubility are weighed, solvent is measured, configuration concentration is 0.01-
The indium yttrium oxygen precursor solution of 0.5 mol/L, through the magnetic agitation and ultrasonic disperse of 0.1-3 hours clear is formed
Indium yttrium oxygen precursor solution；
(2) indium yttrium oxygen film is prepared：Indium yttrium oxygen precursor solution is coated to the substrate for being pre-coated with dielectric layer/grid film
Upper formation indium yttrium oxygen precursor thin-film, carries out 50-150 DEG C of the pre-heat treatment, then through certain power, time and temperature
Light wave is annealed, and can repeatedly be coated presoma indium yttrium oxygen solution according to the thickness requirement of indium yttrium oxygen film and be made annealing treatment, that is, obtain
Indium yttrium oxygen transparent semiconductor film.
(3) indium yttrium oxygen thin film transistor (TFT) is prepared：Source-drain electrode is deposited on indium yttrium oxygen transparent semiconductor film, that is, is obtained
Indium yttrium oxygen thin film transistor (TFT).
In the step of preparation method of the present invention (1), described soluble indium salts are indium nitrate, inidum chloride, sulfuric acid
One or more in indium or indium acetate.
In the step of preparation method of the present invention (1), described soluble yttrium salt is yttrium nitrate, yttrium chloride, sulfuric acid
One or more in yttrium or yttrium acetate.
In the step of preparation method of the present invention (1), described solvent be EGME, ethanol, water, ethylene glycol or
One or more in dimethylformamide.
In the step of preparation method of the present invention (1), the painting method be spin coating method, drop-coating, dip coating,
Spray-on process or ink-jet printing process.
In the step of preparation method of the present invention (1), the dielectric layer is silica, zirconium oxide, hafnium oxide, oxidation
One or more in aluminium, yittrium oxide or lanthana.
In the step of preparation method of the present invention (1), described grid film be aluminium, copper, silver, molybdenum, tin indium oxide or
One or more in gold thin film.
In the step of preparation method of the present invention (1), the instrument that generates of described light wave is the light-wave cooker as kitchen tools
Or the heating instrument with halogen lamp tube.
In the step of preparation method of the present invention (1), the power of described light wave annealing is 100-900 W.
In the step of preparation method of the present invention (1), the time of described light wave annealing is 5-120 minutes.
In the step of preparation method of the present invention (1), the temperature in described light wave annealing process is 100-300 DEG C.
In the step of preparation method of the present invention (1), described source-drain electrode be aluminium, copper, silver, molybdenum, tin indium oxide or
One or more in gold thin film.
The invention has the beneficial effects as follows：Present invention process is simply easily operated, and raw material is cheap and easy to get, prepared indium yttrium oxygen
Transparent semiconductor film transistor performance is high, is expected to be applied in the devices such as information electronics.Can by the technique of the present invention
To avoid common pyrosol technique, process cycle length or expensive device etc., low cost from being adapted to industrialization large-scale production.
Description of the drawings
Below in conjunction with the accompanying drawings the present invention is further illustrated.
Accompanying drawing 1 is the device junction composition of the indium yttrium oxygen thin film transistor (TFT) of one of embodiment；
Accompanying drawing 2 is the transfer characteristic curve of the indium yttrium oxygen thin film transistor (TFT) of one of embodiment.
Specific embodiment
Below in conjunction with the accompanying drawings the present invention is further illustrated with specific embodiment.
Embodiment 1：
1.106 g inidum chlorides are weighed, 1.515 g yttrium chlorides measure 10 milliliters of aqueous solution, and configuration concentration is the indium of 0.5 mol/L
Yttrium oxygen precursor solution, through the magnetic agitations of 2 hours and ultrasonic disperse the indium yttrium oxygen precursor solution of clear is formed.Will
Indium yttrium oxygen precursor solution is coated to formation indium yttrium oxygen precursor thin-film on the indium oxide tin glass for be pre-coated with silica, carries out
100 DEG C of the pre-heat treatment, then through 300W, the light wave annealing of 60 minutes and 200 DEG C, that is, obtains indium yttrium oxygen transparent semiconductor
Film.Source-drain electrode is deposited on indium yttrium oxygen transparent semiconductor film, that is, obtains indium yttrium oxygen thin film transistor (TFT).
Embodiment 2：
0.032 g indium nitrates are weighed, 0.03 g yttrium chlorides measure 10 milliliters of ethanol solutions, and configuration concentration is 0.01 mol/L
Indium yttrium oxygen precursor solution, the indium yttrium oxygen presoma for forming clear through the magnetic agitation of 0.5 hour and ultrasonic disperse is molten
Liquid.Indium yttrium oxygen precursor solution is coated to formation indium yttrium oxygen precursor thin-film in the monocrystalline substrate for be pre-coated with yittrium oxide,
50 DEG C of the pre-heat treatment is carried out, then through 700W, the light wave annealing of 30 minutes and 280 DEG C, that is, indium yttrium oxygen transparent half is obtained
Conductor thin film.Source-drain electrode is deposited on indium yttrium oxygen transparent semiconductor film, that is, obtains indium yttrium oxygen thin film transistor (TFT).
Embodiment 3：
0.146 g indium acetates are weighed, 0.192 g yttrium nitrates measure 5 milliliters of ethylene glycol solutions, and configuration concentration is 0.1 mol/L
Indium yttrium oxygen precursor solution, the indium yttrium oxygen presoma for forming clear through the magnetic agitation of 1 hour and ultrasonic disperse is molten
Liquid.Indium yttrium oxygen precursor solution is coated to formation indium yttrium oxygen precursor thin-film in the monocrystalline substrate for be pre-coated with aluminum oxide,
90 DEG C of the pre-heat treatment is carried out, then through 900W, the light wave annealing of 5 minutes and 300 DEG C, that is, obtains that indium yttrium oxygen is transparent partly to lead
Body thin film.Source-drain electrode is deposited on indium yttrium oxygen transparent semiconductor film, that is, obtains indium yttrium oxygen thin film transistor (TFT).
Embodiment 4：
0.221 g inidum chlorides are weighed, 0.251 g yttrium acetates measure 20 milliliters of dimethyl formamide solutions, and configuration concentration is 0.05
The indium yttrium oxygen precursor solution of mol/L, forms before the indium yttrium oxygen of clear through the magnetic agitations of 2 hours and ultrasonic disperse
Drive liquid solution.Indium yttrium oxygen precursor solution is coated to formation indium yttrium oxygen forerunner on the indium oxide tin glass for be pre-coated with lanthana
Body thin film, carries out 120 DEG C of the pre-heat treatment, then through 500W, the light wave annealing of 20 minutes and 250 DEG C, that is, obtains indium yttrium
Oxygen transparent semiconductor film.Source-drain electrode is deposited on indium yttrium oxygen transparent semiconductor film, that is, obtains indium yttrium oxygen thin film transistor (TFT).
Embodiment 5：
Weighing 2.4 g indium nitrates, 1.883 g yttrium acetates measure 15 milliliters of EGME solution, configuration concentration is 0.5 mole/
The indium yttrium oxygen precursor solution for rising, through the magnetic agitations of 3 hours and ultrasonic disperse the indium yttrium oxygen presoma of clear is formed
Solution.Indium yttrium oxygen precursor solution is coated to formation indium yttrium oxygen presoma in the monocrystalline substrate for be pre-coated with yittrium oxide thin
Film, carries out 70 DEG C of the pre-heat treatment, then through 100W, the light wave annealing of 120 minutes and 150 DEG C, that is, obtains indium yttrium oxygen saturating
Bright semiconductive thin film.Source-drain electrode is deposited on indium yttrium oxygen transparent semiconductor film, that is, obtains indium yttrium oxygen thin film transistor (TFT).
Above-described embodiment combines accompanying drawing and the specific embodiment of the present invention is described, but not to present invention protection
The restriction of scope.One of ordinary skill in the art should be understood that on the basis of technical scheme, those skilled in the art
Make by creative work need not be paid to the present invention various modifications or deformation, still protection scope of the present invention with
It is interior.
Claims (11)
1. a kind of method that low temperature liquid phase prepares high mobility indium yttrium oxygen thin film transistor (TFT), it is characterised in that comprise the steps：
(1) indium yttrium oxygen precursor solution is prepared：The indium salts and yttrium salt of solubility are weighed, solvent is measured, configuration concentration is 0.01-
The indium yttrium oxygen precursor solution of 0.5 mol/L, through the magnetic agitation and ultrasonic disperse of 0.1-3 hours clear is formed
Indium yttrium oxygen precursor solution；
(2) indium yttrium oxygen film is prepared：Indium yttrium oxygen precursor solution is coated to the lining for being pre-coated with dielectric layer/grid film
Indium yttrium oxygen precursor thin-film is formed on bottom, 50-150 DEG C of the pre-heat treatment is carried out, then through certain power, time and temperature
Light wave annealing, presoma indium yttrium oxygen solution can repeatedly be coated according to the thickness requirement of indium yttrium oxygen film and made annealing treatment, obtain
Indium yttrium oxygen transparent semiconductor film；
(3) indium yttrium oxygen thin film transistor (TFT) is prepared：Source-drain electrode is deposited on indium yttrium oxygen transparent semiconductor film, that is, obtains indium yttrium
Oxygen thin film transistor (TFT)；
The instrument that generates of described light wave is the light-wave cooker as kitchen tools or the heating instrument with halogen lamp tube.
2. the method that a kind of low temperature liquid phase according to claim 1 prepares high mobility indium yttrium oxygen thin film transistor (TFT), it is special
Levy and be：Described soluble indium salts are one or more in indium nitrate, inidum chloride, indium sulfate or indium acetate.
3. the method that a kind of low temperature liquid phase according to claim 1 prepares high mobility indium yttrium oxygen thin film transistor (TFT), it is special
Levy and be：Described soluble yttrium salt is one or more in yttrium nitrate, yttrium chloride, yttrium sulfate or yttrium acetate.
4. the method that a kind of low temperature liquid phase according to claim 1 prepares high mobility indium yttrium oxygen thin film transistor (TFT), it is special
Levy and be：Described solvent is one or more in EGME, ethanol, water, ethylene glycol or dimethylformamide.
5. the method that a kind of low temperature liquid phase according to claim 1 prepares high mobility indium yttrium oxygen thin film transistor (TFT), it is special
Levy and be：The painting method is spin coating method, drop-coating, dip coating, spray-on process or ink-jet printing process.
6. the method that a kind of low temperature liquid phase according to claim 1 prepares high mobility indium yttrium oxygen thin film transistor (TFT), it is special
Levy and be：The dielectric layer be silica, zirconium oxide, hafnium oxide, aluminum oxide, yittrium oxide or lanthana in one or two with
On.
7. the method that a kind of low temperature liquid phase according to claim 1 prepares high mobility indium zinc oxygen thin film transistor (TFT), it is special
Levy and be：Described grid film is one or more in aluminium, copper, silver, molybdenum, tin indium oxide or gold thin film.
8. the method that a kind of low temperature liquid phase according to claim 1 prepares high mobility indium yttrium oxygen thin film transistor (TFT), it is special
Levy and be：The power of described light wave annealing is 100-900 W.
9. the method that a kind of low temperature liquid phase according to claim 1 prepares high mobility indium yttrium oxygen thin film transistor (TFT), it is special
Levy and be：The time of described light wave annealing is 5-120 minutes.
10. the method that a kind of low temperature liquid phase according to claim 1 prepares high mobility indium yttrium oxygen thin film transistor (TFT), it is special
Levy and be：Temperature in described light wave annealing process is 100-300 DEG C.
The method that a kind of 11. low temperature liquid phases according to claim 1 prepare high mobility indium yttrium oxygen thin film transistor (TFT), it is special
Levy and be：Described source-drain electrode is one or more in aluminium, copper, silver, tin indium oxide or gold thin film.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112908852A (en) * | 2021-01-11 | 2021-06-04 | 华东师范大学 | Hafnium-doped indium oxide thin film transistor and preparation method thereof |
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| US4874462A (en) * | 1987-12-09 | 1989-10-17 | Central Glass Company, Limited | Method of forming patterned film on substrate surface by using metal alkoxide sol |
| CN102364716A (en) * | 2010-06-17 | 2012-02-29 | 株式会社理光 | Organic electroluminescence device, manufacturing method thereof, and light emission apparatus |
| CN102768945A (en) * | 2012-07-12 | 2012-11-07 | 复旦大学 | Method for producing indium gallium zinc oxide semiconductor thin film by using sol-gel method |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4874462A (en) * | 1987-12-09 | 1989-10-17 | Central Glass Company, Limited | Method of forming patterned film on substrate surface by using metal alkoxide sol |
| CN102364716A (en) * | 2010-06-17 | 2012-02-29 | 株式会社理光 | Organic electroluminescence device, manufacturing method thereof, and light emission apparatus |
| CN102768945A (en) * | 2012-07-12 | 2012-11-07 | 复旦大学 | Method for producing indium gallium zinc oxide semiconductor thin film by using sol-gel method |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN112908852A (en) * | 2021-01-11 | 2021-06-04 | 华东师范大学 | Hafnium-doped indium oxide thin film transistor and preparation method thereof |
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