CN106298455A - A kind of low temperature liquid phase method preparing high dielectric oxidation yttrium thin film - Google Patents
A kind of low temperature liquid phase method preparing high dielectric oxidation yttrium thin film Download PDFInfo
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- CN106298455A CN106298455A CN201610821756.1A CN201610821756A CN106298455A CN 106298455 A CN106298455 A CN 106298455A CN 201610821756 A CN201610821756 A CN 201610821756A CN 106298455 A CN106298455 A CN 106298455A
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- 239000010409 thin film Substances 0.000 title claims abstract description 51
- 238000000034 method Methods 0.000 title claims abstract description 39
- 229910052727 yttrium Inorganic materials 0.000 title claims abstract description 22
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 title claims abstract description 22
- 239000007791 liquid phase Substances 0.000 title claims abstract description 17
- 230000003647 oxidation Effects 0.000 title claims abstract description 17
- 238000007254 oxidation reaction Methods 0.000 title claims abstract description 17
- 239000002243 precursor Substances 0.000 claims abstract description 31
- 238000000137 annealing Methods 0.000 claims abstract description 18
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 claims abstract description 14
- 238000010438 heat treatment Methods 0.000 claims abstract description 10
- 238000013019 agitation Methods 0.000 claims abstract description 9
- 239000000758 substrate Substances 0.000 claims abstract description 9
- RUDFQVOCFDJEEF-UHFFFAOYSA-N yttrium(III) oxide Inorganic materials [O-2].[O-2].[O-2].[Y+3].[Y+3] RUDFQVOCFDJEEF-UHFFFAOYSA-N 0.000 claims abstract description 8
- 239000002904 solvent Substances 0.000 claims abstract description 5
- 150000003746 yttrium Chemical class 0.000 claims abstract description 5
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 9
- ZMXDDKWLCZADIW-UHFFFAOYSA-N N,N-Dimethylformamide Chemical compound CN(C)C=O ZMXDDKWLCZADIW-UHFFFAOYSA-N 0.000 claims description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 6
- BXJPTTGFESFXJU-UHFFFAOYSA-N yttrium(3+);trinitrate Chemical compound [Y+3].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O BXJPTTGFESFXJU-UHFFFAOYSA-N 0.000 claims description 5
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 claims description 3
- OBOSXEWFRARQPU-UHFFFAOYSA-N 2-n,2-n-dimethylpyridine-2,5-diamine Chemical compound CN(C)C1=CC=C(N)C=N1 OBOSXEWFRARQPU-UHFFFAOYSA-N 0.000 claims description 3
- NFSAPTWLWWYADB-UHFFFAOYSA-N n,n-dimethyl-1-phenylethane-1,2-diamine Chemical compound CN(C)C(CN)C1=CC=CC=C1 NFSAPTWLWWYADB-UHFFFAOYSA-N 0.000 claims description 3
- 238000004528 spin coating Methods 0.000 claims description 3
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 3
- 238000003618 dip coating Methods 0.000 claims description 2
- 238000001548 drop coating Methods 0.000 claims description 2
- 229910052736 halogen Inorganic materials 0.000 claims description 2
- 150000002367 halogens Chemical class 0.000 claims description 2
- 238000007641 inkjet printing Methods 0.000 claims description 2
- 238000002663 nebulization Methods 0.000 claims description 2
- 238000010422 painting Methods 0.000 claims description 2
- RTAYJOCWVUTQHB-UHFFFAOYSA-H yttrium(3+);trisulfate Chemical compound [Y+3].[Y+3].[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O.[O-]S([O-])(=O)=O RTAYJOCWVUTQHB-UHFFFAOYSA-H 0.000 claims description 2
- 239000000463 material Substances 0.000 abstract description 4
- 239000003990 capacitor Substances 0.000 abstract description 3
- 238000011031 large-scale manufacturing process Methods 0.000 abstract description 3
- 238000004377 microelectronic Methods 0.000 abstract description 3
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000000243 solution Substances 0.000 description 23
- 238000002360 preparation method Methods 0.000 description 9
- 229910052799 carbon Inorganic materials 0.000 description 5
- 238000005303 weighing Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- 229910052814 silicon oxide Inorganic materials 0.000 description 4
- PNEYBMLMFCGWSK-UHFFFAOYSA-N Alumina Chemical compound [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 239000007788 liquid Substances 0.000 description 3
- 239000007864 aqueous solution Substances 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 230000005669 field effect Effects 0.000 description 2
- 229910052760 oxygen Inorganic materials 0.000 description 2
- 239000001301 oxygen Substances 0.000 description 2
- 239000012071 phase Substances 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 230000005641 tunneling Effects 0.000 description 2
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- QAOWNCQODCNURD-UHFFFAOYSA-N Sulfuric acid Chemical compound OS(O)(=O)=O QAOWNCQODCNURD-UHFFFAOYSA-N 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000011248 coating agent Substances 0.000 description 1
- 238000000576 coating method Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000000280 densification Methods 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 238000005566 electron beam evaporation Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 239000006193 liquid solution Substances 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000005118 spray pyrolysis Methods 0.000 description 1
- 238000004544 sputter deposition Methods 0.000 description 1
- 239000007858 starting material Substances 0.000 description 1
- 235000011149 sulphuric acid Nutrition 0.000 description 1
- 239000001117 sulphuric acid Substances 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 239000012808 vapor phase Substances 0.000 description 1
- 229910001928 zirconium oxide Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01G—CAPACITORS; CAPACITORS, RECTIFIERS, DETECTORS, SWITCHING DEVICES, LIGHT-SENSITIVE OR TEMPERATURE-SENSITIVE DEVICES OF THE ELECTROLYTIC TYPE
- H01G4/00—Fixed capacitors; Processes of their manufacture
- H01G4/002—Details
- H01G4/018—Dielectrics
- H01G4/06—Solid dielectrics
- H01G4/08—Inorganic dielectrics
- H01G4/10—Metal-oxide dielectrics
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/28—Manufacture of electrodes on semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/268
- H01L21/283—Deposition of conductive or insulating materials for electrodes conducting electric current
- H01L21/288—Deposition of conductive or insulating materials for electrodes conducting electric current from a liquid, e.g. electrolytic deposition
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Ceramic Engineering (AREA)
- Formation Of Insulating Films (AREA)
Abstract
The invention belongs to new material and semiconductor applications, particularly to a kind of low temperature liquid phase method preparing high dielectric oxidation yttrium thin film.Comprising the steps: to weigh the yttrium salt of solubility, measure solvent, configuration concentration is the yittrium oxide precursor solution of 0.01 0.5 mol/L, forms the yittrium oxide precursor solution of clear through the magnetic agitation of 0.1 3 hours and ultrasonic disperse；Prepare Yttrium oxide thin film: be coated to yittrium oxide precursor solution on cleaned substrate form yittrium oxide precursor thin-film, carry out the pre-heat treatment of 50 150 DEG C, it is then passed through the light wave annealing of certain power, time and temperature, thickness requirement according to Yttrium oxide thin film can repeatedly coat oxidation of precursor yttrium solution and make annealing treatment, and i.e. obtains yttria dielectric thin film.Gained Yttrium oxide thin film dielectric properties of the present invention are high, have important application prospect at the microelectronic such as transistor, capacitor.Common pyrosol technique, process cycle length or expensive device etc., low cost can be avoided by the technique of the present invention, be suitable for industrialization large-scale production.
Description
Technical field
The invention belongs to new material and semiconductor applications, particularly to a kind of Low Temperature Liquid preparing high dielectric oxidation yttrium thin film
Phase method, Yttrium oxide thin film has important application prospect at the microelectronic such as transistor, capacitor.
Background technology
Along with developing rapidly of integrated circuit, as si-substrate integrated circuit core devices metal-oxide-field effect transistor
The characteristic size of pipe (Metal-Oxide-Semiconductor Field Effect Transistor, MOSFET) is just to rub
You reduce law speed.But, when the thickness of tradition gate dielectric layer silicon oxide is reduced to atomic size, owing to quantum tunneling is imitated
The impact answered, silicon oxide will lose dielectric properties, so that stability and the reliability of device will be had a strong impact on.It is thus desirable to seek
New high dielectric constant (K) material is looked for make gate medium to substitute silicon oxide, it is possible to while keeping and increasing grid capacitance, to make
Dielectric layer still keeps enough physical thickness to limit the impact of tunneling effect.Yittrium oxide because there being many excellent character,
Such as electrical insulating property, chemical inertness, mechanical stability, high-temperature stability etc., and be widely used in such as optical thin film and big face
The numerous areas such as long-pending flat board, plasma display apparatus, high K insulating dielectric layer material.Yittrium oxide is normal owing to having higher dielectric
Number (16), compares aluminium oxide (about 9), uses yittrium oxide can reduce equivalent oxide thickness, is selected as high K dielectric material, can
Using with replacing silicon oxide in a mosfet as new insulating dielectric layer.
The method preparing Yttrium oxide thin film at present is varied, mainly includes vapor phase method and the big class of liquid phase method two.Such as, magnetic
The methods such as control sputtering, electron beam evaporation, ald and chemical gaseous phase deposition are all used to prepare Yttrium oxide thin film.But,
These gas phase process typically require vacuum environment, add the complexity of equipment and the raising of cost.In recent years, liquid phase process is day by day
Cause and pay close attention to widely and develop rapidly, such as sol-gel process, spray pyrolysis etc..The liquid phase method of development in recent years
The research report of synthesis Yttrium oxide thin film has many.Such as, the Chinese invention patent of Publication No. CN104201112A discloses
A kind of preparation method based on aqueous solution thin film transistor (TFT): first Yttrium trinitrate is dissolved in magnetic agitation in deionized water and forms zirconium oxide
Precursor solution, then cleans low-resistance surface of silicon spin coating precursor solution, more baked, that process annealing obtains yittrium oxide is thin
Membrane sample.The Chinese invention patent of Publication No. CN101710588B discloses the top gate medium of a kind of carbon-based field-effect transistors
And preparation method thereof: growth layer of metal yttrium thin film, then by the method for thermal oxide, yttrium is oxidized to yittrium oxide, the oxygen obtained
Change yttrium thin film as top gate medium.Be can be seen that by foregoing invention patent, although liquid phase method can prepare the oxidation of superior performance
Yttrium thin film, but liquid phase method typically requires high temperature (higher than 400 DEG C) annealing, precursor thin-film just can be promoted to decompose and densification, shape
Become fine and close Yttrium oxide thin film free of pinholes.Therefore, a kind of new low temperature liquid phase technology technology of preparing is found, for Yttrium oxide thin film
Large-scale application in various fields is particularly important and urgent.
Summary of the invention
It is an object of the invention to provide a kind of low temperature liquid phase method preparing high dielectric oxidation yttrium thin film, it is achieved yittrium oxide
Simple and efficient prepare, it is easier to large-scale production and application.The innovative point of the present invention essentially consists in: developed new low temperature light
Wave method efficiently synthesizes the Yttrium oxide thin film of high dielectric property.
Technical scheme, specifically includes following steps:
(1) preparing precursor solution: weigh the yttrium salt of solubility, measure solvent, configuration concentration is 0.01-0.5 mol/L
Yittrium oxide precursor solution, forms the yittrium oxide presoma of clear through the magnetic agitation of 0.1-3 hour and ultrasonic disperse
Solution；
(2) Yttrium oxide thin film is prepared: be coated to yittrium oxide precursor solution on cleaned substrate form yittrium oxide forerunner
Body thin film, carries out the pre-heat treatment of 50-150 DEG C, is then passed through the light wave annealing of certain power, time and temperature, according to oxidation
The thickness requirement of yttrium thin film can repeatedly yttria-coating precursor solution making annealing treatment, i.e. obtain yttria dielectric thin film.
In the step (1) of preparation method of the present invention, the yttrium salt of described solubility is Yttrium trinitrate, Yttrium chloride(Y2Cl6), sulphuric acid
One or more in yttrium or yttrium acetate.
In the step (1) of preparation method of the present invention, described solvent be ethylene glycol monomethyl ether, ethanol, water, ethylene glycol or
One or more in dimethylformamide.
In the step (1) of preparation method of the present invention, described painting method be spin coating method, drop-coating, dip coating,
Nebulization or ink-jet printing process.
In the step (1) of preparation method of the present invention, the instrument that generates of described light wave is the light-wave cooker as kitchen tools
Or there is the heating instrument of halogen lamp tube.
In the step (1) of preparation method of the present invention, the power of described light wave annealing is 100-900 W.
In the step (1) of preparation method of the present invention, the time of described light wave annealing is 5-120 minute.
In the step (1) of preparation method of the present invention, the described temperature in light wave annealing process is 150-300 DEG C.
The invention has the beneficial effects as follows: present invention process the most easily operates, cheaper starting materials is easy to get, prepared yittrium oxide
Thin-film dielectric performance is high, is expected to be applied in the microelectronic component such as transistor, capacitor.Permissible by the technique of the present invention
Avoid common pyrosol technique, process cycle length or expensive device etc., low cost, be suitable for industrialization large-scale production.
Accompanying drawing explanation
The present invention is further illustrated below in conjunction with the accompanying drawings.
Accompanying drawing 1 is the capacitance-frequency curve of the Yttrium oxide thin film of one of embodiment；
Accompanying drawing 2 is the leakage current density-bias plot of the Yttrium oxide thin film of one of embodiment.
Detailed description of the invention
The present invention is further illustrated with specific embodiment below in conjunction with the accompanying drawings.
Embodiment 1:
Weighing 0.098 g Yttrium chloride(Y2Cl6), measure 10 milliliters of aqueous solutions, configuration concentration is that the yittrium oxide presoma of 0.05 mol/L is molten
Liquid, forms the yittrium oxide precursor solution of clear through the magnetic agitation of 3 hours and ultrasonic disperse.By yittrium oxide presoma
Solution is coated on cleaned substrate form yittrium oxide precursor thin-film, carries out the pre-heat treatment of 50 DEG C, is then passed through
The light wave annealing of 700W, 30 minutes and 280 DEG C, i.e. obtains yttria dielectric thin film.
Embodiment 2:
Weighing 0.042 g yttrium acetate, measure 10 milliliters of ethylene glycol monomethyl ether solution, configuration concentration is the yittrium oxide of 0.01 mol/L
Precursor solution, forms the yittrium oxide precursor solution of clear through the magnetic agitation of 0.1 hour and ultrasonic disperse.By oxygen
Change yttrium precursor solution to be coated on cleaned substrate form yittrium oxide precursor thin-film, carry out the pre-heat treatment of 150 DEG C,
It is then passed through the light wave annealing of 100W, 120 minutes and 150 DEG C, i.e. obtains yttria dielectric thin film.
Embodiment 3:
Weighing 0.192 g Yttrium trinitrate, measure 5 milliliters of ethanol solution, configuration concentration is that the yittrium oxide presoma of 0.1 mol/L is molten
Liquid, forms the yittrium oxide precursor solution of clear through the magnetic agitation of 1 hour and ultrasonic disperse.By yittrium oxide presoma
Solution is coated on cleaned substrate form yittrium oxide precursor thin-film, carries out the pre-heat treatment of 90 DEG C, is then passed through
The light wave annealing of 500W, 20 minutes and 250 DEG C, i.e. obtains yttria dielectric thin film.
Embodiment 4:
Weighing 4.66 g Yttrium sesquisulfates, measure 20 milliliters of ethylene glycol solutions, configuration concentration is the yittrium oxide presoma of 0.5 mol/L
Solution, forms the yittrium oxide precursor solution of clear through the magnetic agitation of 2 hours and ultrasonic disperse.By yittrium oxide forerunner
Liquid solution is coated on cleaned substrate form yittrium oxide precursor thin-film, carries out the pre-heat treatment of 120 DEG C, is then passed through
The light wave annealing of 300W, 60 minutes and 200 DEG C, i.e. obtains yttria dielectric thin film.
Embodiment 5:
Weighing 2.873 g Yttrium trinitrates, measure 15 milliliters of dimethyl formamide solutions, configuration concentration is the yittrium oxide of 0.5 mol/L
Precursor solution, forms the yittrium oxide precursor solution of clear through the magnetic agitation of 3 hours and ultrasonic disperse.Will oxidation
Yttrium precursor solution is coated on cleaned substrate form yittrium oxide precursor thin-film, carries out the pre-heat treatment of 70 DEG C, then
Light wave through 900W, 5 minutes and 300 DEG C is annealed, and i.e. obtains yttria dielectric thin film.
Above-described embodiment combines accompanying drawing and is described the detailed description of the invention of the present invention, but not protects the present invention
The restriction of scope.One of ordinary skill in the art should be understood that on the basis of technical scheme, those skilled in the art
Need not pay the various amendments to the present invention or the deformation that creative work can be made, still protection scope of the present invention with
In.
Claims (7)
1. the low temperature liquid phase method preparing high dielectric oxidation yttrium thin film, it is characterised in that comprise the steps:
(1) preparing yittrium oxide precursor solution: weigh the yttrium salt of solubility, measure solvent, configuration concentration is that 0.01-0.5 rubs
You/liter yittrium oxide precursor solution, form the yittrium oxide of clear through the magnetic agitation of 0.1-3 hour and ultrasonic disperse
Precursor solution；
(2) Yttrium oxide thin film is prepared: be coated to yittrium oxide precursor solution on cleaned substrate form yittrium oxide presoma
Thin film, carries out the pre-heat treatment of 50-150 DEG C, is then passed through the light wave annealing of certain power, time and temperature, according to yittrium oxide
The thickness requirement of thin film can repeatedly coat oxidation of precursor yttrium solution and make annealing treatment, and i.e. obtains yttria dielectric thin film；
The instrument that generates of described light wave is as the light-wave cooker of kitchen tools or to have the heating instrument of halogen lamp tube.
A kind of low temperature liquid phase method preparing high dielectric oxidation yttrium thin film the most according to claim 1, it is characterised in that: institute
The yttrium salt of the solubility stated is one or more in Yttrium trinitrate, Yttrium chloride(Y2Cl6), Yttrium sesquisulfate or yttrium acetate.
A kind of low temperature liquid phase method preparing high dielectric oxidation yttrium thin film the most according to claim 1, it is characterised in that: institute
The solvent stated is one or more in ethylene glycol monomethyl ether, ethanol, water, ethylene glycol or dimethylformamide.
A kind of low temperature liquid phase method preparing high dielectric oxidation yttrium thin film the most according to claim 1, it is characterised in that: institute
Stating painting method is spin coating method, drop-coating, dip coating, nebulization or ink-jet printing process.
A kind of low temperature liquid phase method preparing high dielectric oxidation yttrium thin film the most according to claim 1, it is characterised in that: institute
The power of the light wave annealing stated is 100-900 W.
A kind of low temperature liquid phase method preparing high dielectric oxidation yttrium thin film the most according to claim 1, it is characterised in that: institute
The time of the light wave annealing stated is 5-120 minute.
A kind of low temperature liquid phase method preparing high dielectric oxidation yttrium thin film the most according to claim 1, it is characterised in that: institute
Temperature in the light wave annealing process stated is 150-300 DEG C.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107417951A (en) * | 2017-04-24 | 2017-12-01 | 天津城建大学 | A kind of preparation method of the orderly yittrium oxide nano thin-film of large-area two-dimensional |
| CN109698071A (en) * | 2017-10-24 | 2019-04-30 | 王文建 | A kind of preparation method and high specific volume capacitor of Fabrication of High Specific Capacitance integrated electrode |
| CN110800082A (en) * | 2017-05-26 | 2020-02-14 | Iones株式会社 | Method for forming yttrium oxide fluoride coating film and yttrium oxide fluoride coating film based on same |
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| CN101462893A (en) * | 2009-01-12 | 2009-06-24 | 浙江理工大学 | Yttrium oxide thin film and preparation thereof |
| CN102768945A (en) * | 2012-07-12 | 2012-11-07 | 复旦大学 | Method for producing indium gallium zinc oxide semiconductor thin film by using sol-gel method |
| CN102933496A (en) * | 2010-06-08 | 2013-02-13 | 住友金属矿山株式会社 | Method for producing metal oxide film, metal oxide film, element using the metal oxide film, substrate with metal oxide film, and device using the substrate with metal oxide film |
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| CN110800082A (en) * | 2017-05-26 | 2020-02-14 | Iones株式会社 | Method for forming yttrium oxide fluoride coating film and yttrium oxide fluoride coating film based on same |
| CN109698071A (en) * | 2017-10-24 | 2019-04-30 | 王文建 | A kind of preparation method and high specific volume capacitor of Fabrication of High Specific Capacitance integrated electrode |
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