CN102420289A - Tantalum-doped oxide semiconductor material and preparation method and application thereof - Google Patents
Tantalum-doped oxide semiconductor material and preparation method and application thereof Download PDFInfo
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- CN102420289A CN102420289A CN2011103354894A CN201110335489A CN102420289A CN 102420289 A CN102420289 A CN 102420289A CN 2011103354894 A CN2011103354894 A CN 2011103354894A CN 201110335489 A CN201110335489 A CN 201110335489A CN 102420289 A CN102420289 A CN 102420289A
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Abstract
The invention discloses a tantalum-doped oxide semiconductor material which consists of a zinc oxide base material and tantalum. The semiconductor material is prepared from four raw materials including Ta2O5, Al2O3, In2O3 and ZnO through a cosputtering or direct-sputtering method, and is applied to preparation of thin-film transistors. The tantalum-doped oxide semiconductor material has the characteristics of higher electron mobility, low off-state current, high on-off ratio and the like, and a preparation method for the thin-film transistors, which uses the tantalum-doped oxide semiconductor material as a channel layer, is simple, low in temperature and low in cost. The prepared thin-film transistors have the advantages of low current carrier off-state current, high on-off ratio and the like.
Description
Technical field
The present invention relates to a kind of semi-conducting material; Especially mix the tantalum pentoxide semi-conducting material; This material can be applied in fields such as organic light emitting display (OLED), liquid crystal display (LCD), Electronic Paper demonstration as the channel layer materials of thin-film transistor, also can be used for integrated circuit fields.
Background technology
In recent years, especially in ORGANIC ELECTROLUMINESCENCE DISPLAYS (OLED) field, the thin-film transistor of based oxide semiconductor more and more comes into one's own in flat panel display.The material of semiconductor channel layer that is used in the thin-film transistor of flat panel display at present mainly is silicon materials, comprises amorphous silicon (a-Si:H), polysilicon, microcrystal silicon etc.Yet amorphous silicon film transistor has photaesthesia, the low (＜1cm of mobility
2/ Vs) with shortcoming such as poor stability; Though polycrystalline SiTFT has higher mobility, because the influence of crystal boundary causes its electricity lack of homogeneity, and the polysilicon preparation temperature is high and cost is high, has limited its application in flat panel display; It is big that microcrystal silicon prepares difficulty, and crystal grain control technology difficulty is high, is not easy to realize large tracts of land scale volume production.The thin-film transistor of based oxide semiconductor has the higher (1～100cm of carrier mobility
2/ Vs), preparation temperature low (＜400 ℃) far below the fusing point of glass, to advantages such as visible transparent, in the TFT of flat panel display substrate field, the development trend that substitutes with the thin-film transistor of traditional silicon prepared is arranged.
Oxide semiconductor material mainly comprises zinc oxide (ZnO), indium zinc oxide (IZO) etc.Wherein, the mobility of ZnO is lower, if be prepared into the ZnO film of the higher polycrystalline of mobility, then needs higher temperature, but the uniformity of the ZnO film of polycrystalline and less stable; The heat treatment temperature of IZO is lower, and mobility is higher, but not enough based on the stability of the thin-film transistor of IZO, threshold voltage is more negative, and the subthreshold value amplitude of oscillation is bigger.The element that therefore generally need in IZO, mix other still mixes these elements electron mobility is reduced greatly to suppress the drift of threshold voltage.
Summary of the invention
In view of the above problems, the purpose of this invention is to provide a kind of tantalum pentoxide semi-conducting material and preparation method thereof of mixing, this material can improve mobility through in the Zinc oxide-base material, introducing new alloy tantalum, and improves stability; Another object of the present invention provides utilizes this to mix the application of tantalum pentoxide semi-conducting material as the thin-film transistor of channel layer, has excellent contact between the active layer of this thin-film transistor and the insulating barrier, has the advantage of mobility height, good stability.
The object of the invention realizes through following technical scheme:
A kind of tantalum pentoxide semi-conducting material of mixing is made up of Zinc oxide-base material and tantalum (Ta).
Preferably, the chemical formula of described Zinc oxide-base material is (Al
xIn
yZn
1-x-y) O, wherein 0≤x≤0.2,0.3≤y≤0.6.When x=0, described Zinc oxide-base material is indium zinc oxide (IZO).
Preferably, the ratio of the total atom number of the atomicity of said tantalum and aluminium, indium and three kinds of elements of zinc is more than or equal to 0.01, smaller or equal to 0.2, i.e. 0.01≤Ta/ (Al+In+Zn)≤0.2.The ratio of Ta is high more, and the intrinsic carrier concentration of material is low more, with the off-state current (I of its thin-film transistor as channel layer (TFT)
Off) low more, on-off ratio is high more, but mobility also can decrease, so the ratio of Ta can not be too high, and should be less than 0.2.
The said preparation method who mixes the tantalum pentoxide semi-conducting material adopts the method preparation of cosputtering, and its step is following:
With Ta
2O
5, Al
2O
3, In
2O
3And four kinds of raw materials of ZnO are prepared into four targets respectively and are installed on four different target position sputter simultaneously, control the ratio of each atom in the prepared material through the sputtering power of regulating different target position; Perhaps earlier with Al
2O
3, In
2O
3And three kinds of raw materials of ZnO are prepared into a target in said atomicity ratio, then with itself and Ta
2O
5Target is installed in sputter simultaneously on the different target position, controls the ratio of each material through the sputtering power of regulating different target position.
The said preparation method who mixes the tantalum pentoxide semi-conducting material adopts the method preparation of direct sputter, and its step is following:
With Ta
2O
5, Al
2O
3, In
2O
3And four kinds of raw materials of ZnO are prepared in said atomicity ratio and carry out sputter on the same target.
The described tantalum pentoxide semi-conducting material of mixing is applied to prepare thin-film transistor (TFT), and this TFT can be in order to drive LCD or OLED.
The preparation method of said thin-film transistor comprises the steps:
(1) method through sputter prepares the film that a layer thickness is the grid material of 100～500nm on glass substrate, and is graphical through the method for mask or photoetching, obtains grid;
(2) method through anodic oxidation or chemical vapour deposition (CVD) or sputter prepares insulating barrier on grid, and thickness is 100～1000nm, and is graphical through the method for mask or photoetching;
(3) material of channel layer is the said tantalum pentoxide semi-conducting material of mixing, and the method through cosputtering or directly sputter is prepared on the insulating barrier, and is graphical through the method for mask or photoetching;
(4) on channel layer, adopt the method for vacuum evaporation or sputter to prepare source electrode and drain electrode, thickness is 100～1000nm, and is graphical through the method for mask or photoetching, promptly makes thin-film transistor.
The thickness of said channel layer is between 20～100nm.
Described structure of mixing the tantalum pentoxide semi-conducting material as the TFT of channel layer, it comprises: substrate, grid, channel layer, insulating barrier, and source electrode and drain electrode.
Substrate can be glass, plastics, silicon chip etc., and grid is positioned on the substrate, and insulating barrier covers the grid upper end; Channel layer is prepared on the insulating barrier, and is positioned at directly over the grid; Source electrode covers the two ends and the space of channel layer respectively with draining, and the distance of the interval right ends of source electrode and drain electrode is channel length (L), and the length of the front and back end of source-drain electrode is channel width (W), and is as shown in Figure 2.
The material of grid can be electric conducting materials such as Al, Mo, Cr, Cu, Ni, Ta, Au, Ag, Pt, Ti, ITO; Available sputter, the preparation of technology such as vacuum thermal evaporation or electron beam evaporation; Thickness is preferably 100～500nm, and is graphical through the method for mask or photoetching.
The material of insulating barrier can be a metal oxide, like aluminium oxide or tantalum oxide etc., also can be silicon dioxide, silicon nitride or insulating polymeric material etc.; The method preparation of available electrochemical oxidation, sputter, chemical vapour deposition (CVD) (PECVD), printing or spin coating; Thickness is 100～1000nm, and is graphical through the method for mask or photoetching.
The material of source electrode and drain electrode can be electric conducting materials such as Al, Mo, Cr, Cu, Ni, Ta, Au, Ag, Pt, Ti, ITO; Available sputter, the preparation of technology such as vacuum thermal evaporation or electron beam evaporation; Thickness is preferably 100～500nm, and is graphical through the method for mask or photoetching.
The tantalum pentoxide semi-conducting material of mixing of the present invention is for mixing tantalum (Ta) in the Zinc oxide-base material; Because Ta has lower electronegativity (1.5); Less than In 1.7 with Zn 1.6); So Ta is very strong to the attraction of the oxygen in the Zinc oxide-base material (O), can reduce the oxygen room, reduce off-state current raising on-off ratio, increase stability.
With respect to prior art, the present invention has following advantage and beneficial effect:
(1) of the present inventionly mix the tantalum pentoxide semi-conducting material to have electron mobility higher, off-state current is low, characteristics such as on-off ratio height; Thereby the thin-film transistor of preparation has the low and on-off ratio advantages of higher of charge carrier off-state current.
(2) utilize that of the present invention to mix the tantalum pentoxide semi-conducting material simple as the film crystal tube preparation method of channel layer, temperature is low, and cost is low.
Description of drawings
Fig. 1 utilizes the schematic cross-section of mixing the tantalum pentoxide semi-conducting material as the thin-film transistor of channel layer of the present invention;
Fig. 2 utilizes the vertical view of mixing the tantalum pentoxide semi-conducting material as the thin-film transistor of channel layer of the present invention;
Fig. 3 mixes the transfer characteristic curve of tantalum pentoxide semi-conducting material as the thin-film transistor of channel layer described in the embodiment 1～4;
Fig. 4 mixes the transfer characteristic curve of tantalum pentoxide semi-conducting material as the thin-film transistor of channel layer described in the embodiment 5;
Fig. 5 mixes the transfer characteristic curve of tantalum pentoxide semi-conducting material as the thin-film transistor of channel layer described in the embodiment 6.
Embodiment
Below in conjunction with accompanying drawing and execution mode the present invention is done further description, but need to prove, embodiment does not constitute the qualification of the scope that the present invention is required to protect.
Embodiment 1
The chemical formula of used Zinc oxide-base material is: (Al
0.01In
0.33Zn
0.66) O, i.e. x=0.01, y=0.33; The ratio of the total atom number of the atomicity of said tantalum and aluminium, indium and three kinds of elements of zinc equals 0.01, i.e. Ta/ (Al+In+Zn)=0.01.
Present embodiment utilizes above-mentioned material as channel layer; Prepared thin-film transistor, as shown in Figure 1, comprising: substrate 10; Be positioned at the grid 11 on the substrate 10; Channel layer 13, the insulating barrier 12 between channel layer 13 and grid 11, lay respectively at channel layer 13 two ends source electrode 14a with the drain electrode 14b.
Wherein, the material of substrate 10 is an alkali-free glass, and thickness is 0.4mm; The material of grid 11 is Al, and through the method preparation of sputter, thickness is 300nm; Insulating barrier 12 is the Al through electrochemical oxidation
2O
3, thickness is 140nm; Channel layer 13 promptly is earlier 0.01: 0.33: 1.32 Al with molecular proportion through the method preparation of direct sputter
2O
3, In
2O
3Mixing obtains (Al with ZnO powder
0.01In
0.33Zn
0.66) O, again with the Ta of Ta/ (Al+In+Zn)=0.01
2O
5With (Al
0.01In
0.33Zn
0.66) O is mixed with into a target and carries out sputter, the base vacuum degree of sputter is 10
-3Pa, sputter pressure is 0.3Pa, and power is 110W, and the thickness of prepared film is 30nm; Source electrode 14a is ITO with the material of drain electrode 14b, and through the method preparation of sputter, thickness is 250nm, and the width of raceway groove and length are respectively 100 μ m and 10 μ m, and breadth length ratio is 10: 1.
Prepared transistor device performance is tested in air.Fig. 3 is the transfer characteristic curve that the thin-film transistor of embodiment 1 records, i.e. relation between drain current and the grid voltage.The test condition of curve is: source voltage (V
S) be 0V, drain voltage (V
D) constant be 5V, grid voltage (V
G) scan test drain current (I to 10V from-10V
D).The mobility of measured device is 14.0cm
2V
-1s
-1, off-state current is 5 * 10
-13A, threshold voltage is-6V.
Embodiment 2
Used Zinc oxide-base material is identical with embodiment 1: (Al
0.01In
0.33Zn
0.66) O; The ratio of the total atom number of the atomicity of described tantalum and aluminium, indium and three kinds of elements of zinc equals 0.05, i.e. Ta/ (Al+In+Zn)=0.05.
Present embodiment utilizes above-mentioned material as channel layer, has prepared thin-film transistor, and preparation, method of testing are identical with embodiment 1.The mobility of measured device is 13.6cm
2V
-1s
-1, off-state current is 2 * 10
-13A, threshold voltage is-3V, and is as shown in Figure 3.
Embodiment 3
Used Zinc oxide-base material is identical with embodiment 1: (Al
0.01In
0.33Zn
0.66) O; The ratio of the total atom number of the atomicity of described tantalum and aluminium, indium and three kinds of elements of zinc equals 0.01, i.e. Ta/ (Al+In+Zn)=0.05.
Present embodiment utilizes above-mentioned material as channel layer, has prepared thin-film transistor, and preparation, method of testing are identical with embodiment 1.The mobility of measured device is 8.7cm
2V
-1s
-1, off-state current is 1 * 10
-13A, threshold voltage is 0V, and is as shown in Figure 3.
Embodiment 4
Used Zinc oxide-base material is identical with embodiment 1: (Al
0.01In
0.33Zn
0.66) O; The ratio of the total atom number of the atomicity of described tantalum and aluminium, indium and three kinds of elements of zinc equals 0.2, i.e. Ta/ (Al+In+Zn)=0.2.
Present embodiment utilizes above-mentioned material as channel layer, has prepared thin-film transistor, and preparation, method of testing are identical with embodiment 1.The mobility of measured device is 0.1cm
2V
-1s
-1, off-state current is 8 * 10
-14A, threshold voltage is 5V, and is as shown in Figure 3.
Off-state current among the embodiment 1～4 reduces along with the increase of Ta content; Threshold voltage increases along with the increase of Ta content, and when Ta/ (Al+In+Zn)=0.1, threshold voltage just is 0; Mobility reduces along with the increase of Ta content, and when Ta/ (Al+In+Zn)＞0.1, mobility sharply reduces along with the increase of Ta content.
Used Zinc oxide-base material is: (Al
0.2In
0.6Zn
0.2) O, i.e. x=0.2, y=0.6; The ratio of the total atom number of the atomicity of described tantalum and aluminium, indium and three kinds of elements of zinc equals 0.1, i.e. Ta/ (Al+In+Zn)=0.1.Present embodiment utilizes above-mentioned material as channel layer, has prepared thin-film transistor, and preparation, method of testing are identical with embodiment 1.The mobility of measured device is 12.0cm
2V
-1s
-1, off-state current is 1 * 10
-12A, threshold voltage is-7V, and is as shown in Figure 4.The content that In is described is big, and mobility is high.
Embodiment 6
The chemical formula of used Zinc oxide-base material is: (In
0.3Zn
0.7) O, i.e. IZO, x=0, y=0.3; The ratio of the total atom number of the atomicity of described tantalum and indium and two kinds of elements of zinc equals 0.05, i.e. Ta/ (In+Zn)=0.05.
Present embodiment utilizes above-mentioned material as channel layer, has prepared thin-film transistor, and preparation, method of testing are identical with embodiment 1.The mobility of measured device is 1.3cm
2V
-1s
-1, off-state current is 6 * 10
-12A, threshold voltage is-1V, and is as shown in Figure 5.The content that In is described is little, and mobility is low.
Claims (8)
1. mix the tantalum pentoxide semi-conducting material for one kind, it is characterized in that, form by Zinc oxide-base material and tantalum.
2. the tantalum pentoxide semi-conducting material of mixing according to claim 1 is characterized in that the chemical formula of described Zinc oxide-base material is (Al
xIn
yZn
1-x-y) O, wherein 0≤x≤0.2,0.3≤y≤0.6.
3. the tantalum pentoxide semi-conducting material of mixing according to claim 2 is characterized in that, the ratio of the total atom number of the atomicity of said tantalum and aluminium, indium and three kinds of elements of zinc is more than or equal to 0.01, smaller or equal to 0.2.
4. claim 1 or the 2 or 3 described preparation methods that mix the tantalum pentoxide semi-conducting material is characterized in that, adopt the method preparation of cosputtering, and its step is following:
With Ta
2O
5, Al
2O
3, In
2O
3And four kinds of raw materials of ZnO are prepared into four targets respectively and are installed on four different target position sputter simultaneously, control the ratio of each atom in the prepared material through the sputtering power of regulating different target position; Perhaps earlier with Al
2O
3, In
2O
3And three kinds of raw materials of ZnO are prepared into a target in said atomicity ratio, then with itself and Ta
2O
5Target is installed in sputter simultaneously on the different target position, controls the ratio of each material through the sputtering power of regulating different target position.
5. according to claim 1 or the 2 or 3 described preparation methods that mix the tantalum pentoxide semi-conducting material, it is characterized in that adopt the method preparation of direct sputter, its step is following:
With Ta
2O
5, Al
2O
3, In
2O
3And four kinds of raw materials of ZnO are prepared in said atomicity ratio and carry out sputter on the same target.
6. claim 1 or the 2 or 3 described tantalum pentoxide semi-conducting materials of mixing are applied to prepare thin-film transistor.
7. application according to claim 6 is characterized in that the preparation method of said thin-film transistor comprises the steps:
(1) method through sputter prepares the film that a layer thickness is the grid material of 100～500nm on glass substrate, and is graphical through the method for mask or photoetching, obtains grid;
(2) method through anodic oxidation or chemical vapour deposition (CVD) or sputter prepares insulating barrier on grid, and thickness is 100～1000nm, and is graphical through the method for mask or photoetching;
(3) material of channel layer is the said tantalum pentoxide semi-conducting material of mixing, and the method through cosputtering or directly sputter is prepared on the insulating barrier, and is graphical through the method for mask or photoetching;
(4) on channel layer, adopt the method for vacuum evaporation or sputter to prepare source electrode and drain electrode, thickness is 100～1000nm, and is graphical through the method for mask or photoetching, promptly makes thin-film transistor.
8. application according to claim 7 is characterized in that, the thickness of said channel layer is between 20～100nm.
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| CN102832235A (en) * | 2012-09-14 | 2012-12-19 | 华南理工大学 | Oxide semiconductor and method for manufacturing same |
| CN103022152A (en) * | 2012-12-26 | 2013-04-03 | 青岛盛嘉信息科技有限公司 | Thin film transistor |
| CN103022146A (en) * | 2012-12-05 | 2013-04-03 | 华南理工大学 | Oxide semiconductor material and thin film transistor |
| US9960281B2 (en) | 2015-02-09 | 2018-05-01 | The Hong Kong University Of Science And Technology | Metal oxide thin film transistor with source and drain regions doped at room temperature |
| JP7403718B1 (en) | 2022-01-31 | 2023-12-22 | 三井金属鉱業株式会社 | sputtering target |
| JP7422269B2 (en) | 2022-01-31 | 2024-01-25 | 三井金属鉱業株式会社 | Sputtering target material and method for producing oxide semiconductor |
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