CN102420289A - Tantalum-doped oxide semiconductor material and preparation method and application thereof - Google Patents
Tantalum-doped oxide semiconductor material and preparation method and application thereof Download PDFInfo
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- CN102420289A CN102420289A CN2011103354894A CN201110335489A CN102420289A CN 102420289 A CN102420289 A CN 102420289A CN 2011103354894 A CN2011103354894 A CN 2011103354894A CN 201110335489 A CN201110335489 A CN 201110335489A CN 102420289 A CN102420289 A CN 102420289A
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CN2011103354894A CN102420289A (en) | 2011-10-28 | 2011-10-28 | Tantalum-doped oxide semiconductor material and preparation method and application thereof |
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CN102420289A true CN102420289A (en) | 2012-04-18 |
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Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102832235A (en) * | 2012-09-14 | 2012-12-19 | 华南理工大学 | Oxide semiconductor and method for manufacturing same |
CN103022152A (en) * | 2012-12-26 | 2013-04-03 | 青岛盛嘉信息科技有限公司 | Thin film transistor |
CN103022146A (en) * | 2012-12-05 | 2013-04-03 | 华南理工大学 | Oxide semiconductor material and thin film transistor |
US9960281B2 (en) | 2015-02-09 | 2018-05-01 | The Hong Kong University Of Science And Technology | Metal oxide thin film transistor with source and drain regions doped at room temperature |
JP7403718B1 (en) | 2022-01-31 | 2023-12-22 | 三井金属鉱業株式会社 | sputtering target |
JP7422269B2 (en) | 2022-01-31 | 2024-01-25 | 三井金属鉱業株式会社 | Sputtering target material and method for producing oxide semiconductor |
Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN101681925A (en) * | 2007-06-19 | 2010-03-24 | 三星电子株式会社 | Oxide semiconductors and thin film transistors comprising the same |
CN101872787A (en) * | 2010-05-19 | 2010-10-27 | 华南理工大学 | Metal oxide thin film transistor and preparation method thereof |
US20110042669A1 (en) * | 2007-02-09 | 2011-02-24 | Sun-Il Kim | Thin film transistors and methods of manufacturing the same |
US20110168993A1 (en) * | 2010-01-08 | 2011-07-14 | Sang-Hun Jeon | Transistors and methods of manufacturing the same |
CN102208453A (en) * | 2011-06-02 | 2011-10-05 | 上海大学 | Laminated composite electrode prepared based on oxide film transistor array |
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2011
- 2011-10-28 CN CN2011103354894A patent/CN102420289A/en active Pending
Patent Citations (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US20110042669A1 (en) * | 2007-02-09 | 2011-02-24 | Sun-Il Kim | Thin film transistors and methods of manufacturing the same |
CN101681925A (en) * | 2007-06-19 | 2010-03-24 | 三星电子株式会社 | Oxide semiconductors and thin film transistors comprising the same |
US20110168993A1 (en) * | 2010-01-08 | 2011-07-14 | Sang-Hun Jeon | Transistors and methods of manufacturing the same |
CN101872787A (en) * | 2010-05-19 | 2010-10-27 | 华南理工大学 | Metal oxide thin film transistor and preparation method thereof |
CN102208453A (en) * | 2011-06-02 | 2011-10-05 | 上海大学 | Laminated composite electrode prepared based on oxide film transistor array |
Cited By (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN102832235A (en) * | 2012-09-14 | 2012-12-19 | 华南理工大学 | Oxide semiconductor and method for manufacturing same |
CN103022146A (en) * | 2012-12-05 | 2013-04-03 | 华南理工大学 | Oxide semiconductor material and thin film transistor |
CN103022152A (en) * | 2012-12-26 | 2013-04-03 | 青岛盛嘉信息科技有限公司 | Thin film transistor |
US9960281B2 (en) | 2015-02-09 | 2018-05-01 | The Hong Kong University Of Science And Technology | Metal oxide thin film transistor with source and drain regions doped at room temperature |
JP7403718B1 (en) | 2022-01-31 | 2023-12-22 | 三井金属鉱業株式会社 | sputtering target |
JP7422269B2 (en) | 2022-01-31 | 2024-01-25 | 三井金属鉱業株式会社 | Sputtering target material and method for producing oxide semiconductor |
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Free format text: FORMER OWNER: GUANGZHOU NEW VISION PHOTOELECTRIC TECHNOLOGY CO., LTD. Effective date: 20130716 Owner name: GUANGZHOU NEW VISION PHOTOELECTRIC TECHNOLOGY CO., Free format text: FORMER OWNER: SOUTH CHINA UNIVERSITY OF TECHNOLOGY Effective date: 20130716 |
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Effective date of registration: 20130716 Address after: A1 building, No. 11, Kaiyuan Avenue, Science City, Guangzhou hi tech Industrial Development Zone, Guangdong, first, second, 510730 Applicant after: Guangzhou New Vision Optoelectronic Co., Ltd. Address before: 510640 Tianhe District, Guangdong, No. five road, No. 381, Applicant before: South China University of Technology Applicant before: Guangzhou New Vision Optoelectronic Co., Ltd. |
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Application publication date: 20120418 |