CN103343335B - The preparation method of boron-doping zinc-oxide film - Google Patents
The preparation method of boron-doping zinc-oxide film Download PDFInfo
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Abstract
The present invention relates to film applications, disclose the preparation method of two kinds of boron-doping zinc-oxide films, mainly comprise the following steps: zinc source, stablizer and boron source are mixed in organic solvent, make gel, film and drying treatment are carried out to described gel, obtains precursor thin-film, described precursor thin-film is heat-treated, then cool, obtain boron-doping zinc-oxide film.Two kinds of preparation methods of the present invention, compared to existing vacuum method, improve the utilization ratio of raw material, reduce production cost, ensure that film quality.
Description
Technical field
The present invention relates to film applications, be specifically related to the preparation method of boron-doping zinc-oxide film.
Background technology
Transparent conductive oxide film (TCO) because it is transparent, the excellent properties of conduction and being used widely.At present, studying more is SnO
2base, In
2o
3base and zno-based material.Zinc oxide (ZnO) is a kind of multi-functional oxide material, has hexagonal wurtzite structure, and its energy gap is at room temperature 3.37eV, has good transparent conductivity.ZnO film is compared with other bi-materials, production cost is low, aboundresources, nontoxic, good stability, in the TCO material of two component system, doping zinc-oxide is considered to one of the most promising transparent conductive oxide film material, is widely used in the fields such as electrode of solar battery, photoelectric device, gas sensor, advanced luminescent material, buffer layer.
For meeting the various requirement of ZnO in application, the requirement particularly in photoelectricity, various element is applied to the doping vario-property of ZnO, and after other elements that adulterate, its optical property and electric property can be highly improved.The impurity atoms ionization that these mix can provide unbound electron or free hole, and the electric conductivity of material is got a promotion.At present for N-shaped doping research is III race's element (B, Al, Ga, In) the most widely.Wherein mix the most deep of the ZnO film research of Al and Ga, the zinc oxide mixing B also has many progress.
Adopt chemical Vapor deposition process with zinc ethyl, H as far back as Wenas, WilsonW in 1991 etc.
2o, B
2h
6for raw material, be that the resistivity of the B:ZnO film of 150 DEG C of preparations 2 μm is 10 Ω cm in temperature.Calendar year 2001 B.J.Lokhande etc. adopt spray pyrolysis to prepare B:ZnO film, and its transmitance is greater than 90%, resistivity 10 ~ 4 Ω cm.B:ZnO and Al:ZnO film is applied to the Window layer of CIGS thin film solar cell by the people such as Y.Hagiwara, and the impact on battery efficiency both compared for, it is higher that result shows to use the battery efficiency of B:ZnO film, and this is mainly because the carrier concentration of B:ZnO film and mobility are higher than Al:ZnO film.
Visible, boron-doping zinc-oxide film has excellent photoelectric properties, has broad application prospects, especially in area of solar cell, can be used as Window layer and the electrode materials of battery.Apply in this field at present maximum be AZO film, BZO is a kind of novel window layer material, and have many documents to compared for the impact of AZO and BZO on solar battery efficiency, when document shows that BZO does Window layer, the efficiency value of battery is higher.But existing B:ZnO film is all generally adopt vacuum method to make (as magnetron sputtering method), and the environmental requirement of its operation is higher, generally need complicated equipment, operation not easily, and this kind equipment is all monopolized abroad, expensive; And vacuum method preparation accurately can not control the ratio of boron-doping amount and zinc oxide, product effect is made to be difficult to control; Moreover vacuum method only has about 30% for the utilization ratio of raw material, cause a large amount of wastage of material.Visible, vacuum method prepare boron-doping zinc-oxide film cost higher and be difficult to control quality product.
Summary of the invention
The object of the invention is to the above-mentioned deficiency overcoming prior art, providing two kinds can accurately control boron-doping amount and the preparation method of the boron-doping zinc-oxide film with controlling easy to operate.
In order to realize foregoing invention object, technical scheme of the present invention is as follows:
A wherein preparation method for boron-doping zinc-oxide film, comprises the following steps:
Add stablizer in the organic solution of Xiang Xinyuan, add boron source after being warming up to 25-80 DEG C, then ripening, obtain gel;
Film and drying treatment are carried out to described gel, obtains precursor thin-film;
Heat-treat described precursor thin-film, cooling, obtains boron-doping zinc-oxide film.
The preparation method of another kind of boron-doping zinc-oxide film, comprises the following steps:
Zinc source, stablizer and boron source are dissolved in organic solvent, preparating mixture solution, by described mixture solution evaporation backflow, obtain gel; Wherein, in described gel, the mol ratio of boron atom and zinc atom is 0.2 ~ 1.0:100;
Film and drying treatment are carried out to described gel, obtains precursor thin-film;
Heat-treat described precursor thin-film, cooling, obtains boron-doping zinc-oxide film.
The preparation method of above-mentioned two kinds of boron-doping zinc-oxide films, do not need to use special equipment, special environmental requirement is not needed yet, as vacuum tightness etc., but zinc source, boron source are placed in organic solvent complexing and form gel, the zinc-oxide film of boron-doping is namely obtained through follow-up film, drying and thermal treatment etc.Prepare boron-doping zinc-oxide film compared to existing vacuum method, whole preparation process simply, easily controls, and the utilization ratio of raw material is high, more than 90%, and above-mentioned raw materials range of choice used in the present invention extensively, draw materials easy, cheap.Moreover, the composition of the boron-doping zinc-oxide film made by above-mentioned two kinds of preparation methods of the present invention is zinc oxide and boron oxide, boron oxide and zinc oxide exist with the form of sosoloid, the present invention can control the amount of the raw material added in the preparation by a series of calculation formula, thus accurately control the content of boron oxide and zinc oxide in film, ensure that the film quality made and decrease the waste of raw material, this is that vacuum method not reached.
Visible, compared to existing vacuum preparation method, present invention reduces production cost, and make whole preparation process be easy to control, ensure that quality product.
figure of description explanation
Fig. 1 is the transmitance design sketch of embodiment 1 provided by the invention;
Fig. 2 is the transmitance design sketch of embodiment 2 provided by the invention;
Fig. 3 is the transmitance design sketch of embodiment 3 provided by the invention;
Fig. 4 is the transmitance design sketch of embodiment 4 provided by the invention.
Embodiment
In order to make the technical problem to be solved in the present invention, technical scheme and beneficial effect clearly understand, below in conjunction with embodiment, the present invention is further elaborated.Should be appreciated that specific embodiment described herein only in order to explain the present invention, be not intended to limit the present invention.
Embodiments provide the preparation method of two kinds of boron-doping zinc-oxide films, wherein a kind of preparation method of boron-doping zinc-oxide film, comprise the following steps:
S01: be dissolved in completely in organic solvent in zinc source, forms the first solution;
S02: add stablizer in described first solution, form the second solution;
S03: by described second solution warms to 25-80 DEG C;
S04: add boron source in described second solution after intensification, wherein, the number ratio (or mol ratio) of boron atom and zinc atom is 0.2 ~ 1.0:100;
S05: all raw material stirring in the solution of step S04 process are even, obtains gel after ripening;
S06: film and drying treatment are carried out to described gel, obtains precursor thin-film;
S07: heat-treat described precursor thin-film, then cool, obtains boron-doping zinc-oxide film.
Particularly, in above-mentioned steps S01, one in described organic solvent preferred alcohol, methyl alcohol, Virahol and ethylene glycol monomethyl ether, these organic solvents can realize good effect, and molecular weight is all smaller, be easy to follow-up disaggregating treatment, be beneficial to and finally obtain the boron-doping zinc-oxide film that composition is only boron oxide and zinc oxide.Described zinc source can be Zinc diacetate dihydrate, Glacial acetic acid zinc, zinc acetylacetonate etc., preferred Zinc diacetate dihydrate and Glacial acetic acid zinc, because both molecular weight, is easy to decompose.In addition, Glacial acetic acid zinc because containing crystal water, moisture can not be introduced in subsequent thin film preparation and be beneficial to the selection that the reasons such as film drying can become better.
In above-mentioned steps S02, the object adding stablizer is: one, complete solving zinc source under the help of organic solvent; Two, stablizer, there is complex reaction between zinc source and organic solvent, the complex compound of formation can be combined with boron source better.Described stablizer is preferably monoethanolamine, because its molecular weight is smaller, be easy to follow-up disaggregating treatment, be beneficial to and finally obtain the boron-doping zinc-oxide film that composition is only boron oxide and zinc oxide, certainly, if do not pursue the effect same played as this monoethanolamine, stablizer of the present invention can also select other known stablizer of this area.For the addition of stablizer, determine according to molar weight needed for the complex reaction in zinc source, unsuitable too much or not enough.If because add excessive, then the stablizer of follow-up remnants is too much, can strengthen subsequent decomposition reaction; If add deficiency, can cause reaction not exclusively, affect the rate of utilization in zinc source, also increase decomposition difficulty simultaneously.Therefore, when stablizer is monoethanolamine, zinc source is Zinc diacetate dihydrate, monoethanolamine is preferably 1:1 with the molar weight ratio of Zinc diacetate dihydrate.
In above-mentioned steps S03, be the complex reaction accelerating organic solvent, occur between stablizer and zinc source, can 25-80 DEG C be warming up to.Also can realize complex reaction when certainly not heating, just speed of response is very slow, and the reaction times of needs is very long.Certainly because general production environment is room temperature, it is told the truth when not heating also 25 degrees centigrade.For mixing, stir in temperature-rise period simultaneously, and after temperature rises to set(ting)value, then continue to stir 0.5-2h.
In above-mentioned steps S04, the one in described boron source preferred boric acid, trimethyl borate, trimethyl-boron and borine.They can meet the requirement of boron-doping zinc-oxide film to boron source, and molecular weight is all smaller, are easy to follow-up disaggregating treatment, reduce impurity remaining, finally obtain the boron-doping zinc-oxide film that composition is only boron oxide and zinc oxide.Wherein, the number ratio (or mol ratio) of boron atom and zinc atom is 0.2 ~ 1.0:100, like this, in the boron-doping zinc-oxide film made, the mol ratio of boron oxide and zinc oxide is 0.2 ~ 1.0:100, film is made to have excellent photoelectric properties, when the number ratio (or mol ratio) of boron atom and zinc atom is 0.6 ~ 0.8:100, the performance of film is better.
Addition for above-mentioned organic solvent, boron source and zinc source is drawn by following formulae discovery: concentration=(amount in the amount+boron source in zinc source)/organic solvent of colloidal sol, and be the quality ensureing boron-doping zinc-oxide film, the concentration of colloidal sol is as the criterion with 0.4-1.2mol/L.Organic solvent is analytical pure, and purity is high, first can set the amount of organic solvent, then draws respective molar weight according to the relation of the zinc atom quantity between zinc source and boron source and boron atomic quantity, thus obtains the amount added needed for each raw material.Here zinc source is preferably zinc source, and it is easy to complexing and decomposition in membrane-film preparation process.
In above-mentioned steps S05, generally need stir about 1h and stir to reach, then still aging 24h.
In above-mentioned steps S06, preferably, described film and drying treatment comprise the following steps:
Employing glass is substrate, and substrate is used scrubbing powder, deionized water, hydrochloric acid, deionized water, acetone, washed with de-ionized water successively, and purges with high pure nitrogen, dry for standby.If do not clean substrate, then can have influence on the quality of film, as the homogeneity, planeness etc. of film, and impurity can be introduced in the film;
Adopt dip-coating method film, pull rate is 1-8cm/min, preferred 4cm/min, can obtain the good film of uniformity coefficient like this;
By wet film at 100-120 DEG C of dry 10-15min, then by film at 240-260 DEG C of thermal pretreatment 10-15min;
Repeat aforesaid operations, obtain described precursor thin-film.
In preheating treatment procedure, organic solvent and stablizer can be evaporated or divide and take off.Through such film and drying treatment, can obtain that transparency is high, uniformity coefficient and the good precursor thin-film of planeness, ensure that its good quality.
In above-mentioned steps S07, preferably, described precursor thin-film is heat-treated and is: under described precursor thin-film being placed in the temperature of 400-600 DEG C, process 1-3h, heat-treating atmosphere is air, room temperature is put in then cooling, simple to operation like this, other remaining ingredients in precursor thin-film can be made to decompose completely, only leave the zinc oxide and boron oxide composition of determining ratio.And this heat-treating apparatus can be tube type resistance furnace, can also be other devices certainly.
The preparation method of another kind of boron-doping zinc-oxide film, comprises the following steps:
S08: be dissolved in organic solvent together with boron source by zinc source, stablizer, forms mixing solutions; Wherein, the same a kind of preparation method, the number ratio of boron atom and zinc atom is 0.2 ~ 1.0:100; The number ratio of preferred boron atom and zinc atom is 0.6 ~ 0.8:100.
S09: by described mixing solutions evaporation backflow, obtain transparent homogeneous gel;
S10: film and drying treatment are carried out to described gel, obtains precursor thin-film;
S11: heat-treat described precursor thin-film, be then cooled to room temperature, obtains boron-doping zinc-oxide film.
Particularly, the same a kind of preparation method, in above-mentioned steps S08, the one in described organic solvent preferred alcohol, methyl alcohol, Virahol and ethylene glycol monomethyl ether, the one in described boron source preferred boric acid, trimethyl borate, trimethyl-boron and borine.Described stablizer is preferably monoethanolamine, and the preferred version of the addition of described stablizer and reason thereof be a kind of preparation method as above.
In above-mentioned steps S09, adopt evaporation reflux type, object is while ensureing stablizer, boron source, complex reaction between zinc source and organic solvent, and boiling point is used lower than the backflow of the material of setting temperature of reaction.When to select simultaneously above-mentioned preferred organic solvent, boron source and stablizer time, by described mixing solutions at 60-85 DEG C of evaporation backflow 2-5h, can namely obtain transparent homogeneous gel.
Above-mentioned steps S10 and S11, identical with S07 with the step S06 of upper a kind of preparation method, too, therefore not to repeat here for preferred version.
Compared to existing vacuum method, two kinds of preparation methods of the present invention do not need to use special equipment, special environmental requirement is not needed yet, as vacuum tightness etc., but zinc source, boron source are placed in organic solvent complexing and form gel, the zinc-oxide film of boron-doping is namely obtained through follow-up film, drying and thermal treatment etc.Whole preparation process simply, easily controls, and the utilization ratio of raw material is high, more than 90%, and above-mentioned raw materials range of choice used in the present invention extensively, draw materials easy, cheap.Moreover the present invention controls the amount of the raw material added in the preparation by a series of calculation formula, thus accurately controls the content of boron oxide and zinc oxide in film, ensure that the film quality made.Specifically, the transmitance of the boron-doping zinc-oxide film be made up of the present invention is 85%-95%, and resistivity is 1 × 10
-3~ 9 × 10
-3Ω cm.
Be prepared as example now with concrete boron-doping zinc-oxide film, the present invention is further elaborated.
Embodiment 1
(1) Zinc diacetate dihydrate is dissolved in a certain amount of solvent, solvent is methyl alcohol, dissolve completely and add stablizer monoethanolamine, the molar weight of stablizer and the molar weight of Zinc diacetate dihydrate are 1:1, are warming up to 60 DEG C and stir 2h, then add boric acid, the doping of boron is that 0.2at%(is compared to zinc atom), the concentration of colloidal sol is 0.4mol/L, continues to stir 1h, and still aging 24h obtains gel.
(2) film is with dry: prepare B:ZnO film on the glass substrate.Employing common soda lime glass is substrate, by substrate successively with scrubbing powder-deionized water-hydrochloric acid-deionized water-acetone-deionized water cleaning, and purges with high pure nitrogen.Adopt dip-coating method film, pull rate is 1cm/min.By wet film at 100 DEG C of dry 10min, then by film at 240 DEG C of thermal pretreatment 10min, repeat aforesaid operations for several times, obtain precursor thin-film.
(3) thermal treatment: precursor thin-film is placed in tube type resistance furnace, annealing atmosphere is air, and 600 DEG C of process 1h, cool to room temperature with the furnace, obtain B:ZnO film.
The resistivity adopting four-point probe and Hall effect instrument testing film is 6.7 × 10-3 Ω cm, adopts the transmitance of ultraviolet-visible pectrophotometer testing film, can reach 85%, see Fig. 1.
Embodiment 2
(1) Glacial acetic acid zinc is dissolved in a certain amount of solvent, solvent is Virahol, dissolve completely and add stablizer monoethanolamine, the molar weight of stablizer and the molar weight of Glacial acetic acid zinc are 1:1, are warming up to 80 DEG C and stir 0.5h, then add trimethyl-boron, the doping of boron is that 1.0at%(is compared to zinc atom), the concentration of colloidal sol is 1.2mol/L, continues to stir 1h, and still aging 24h obtains gel.
(2) film is with dry: B:ZnO film prepared by glass substrate.Employing common soda lime glass is substrate, by substrate successively with scrubbing powder-deionized water-hydrochloric acid-deionized water-acetone-deionized water cleaning, and purges with high pure nitrogen.Adopt dip-coating method film, pull rate is 1cm/min.By wet film at 100 DEG C of dry 10min, then by film at 240 DEG C of thermal pretreatment 10min, repeat aforesaid operations for several times, obtain precursor thin-film.
(3) thermal treatment: precursor thin-film is placed in tube type resistance furnace, annealing atmosphere is air, 400 DEG C of process 3h, cools to room temperature with the furnace, obtains B:ZnO film.
The resistivity adopting four-point probe and Hall effect instrument testing film is 1.2 × 10-3 Ω cm, adopts the transmitance of ultraviolet-visible pectrophotometer testing film can up to 92%, see Fig. 2.
Embodiment 3
By Zinc diacetate dihydrate, borine, monoethanolamine is dissolved in ethanol, at 85 DEG C of evaporation backflow 2h, obtains transparent homogeneous gel.The doping of boron is that 0.6at%(is compared to zinc atom), the concentration of colloidal sol is 1.2mol/L.Secondly, employing common soda lime glass is substrate, by substrate successively with scrubbing powder-deionized water-hydrochloric acid-deionized water-acetone-deionized water cleaning, and purges with high pure nitrogen, dry for standby.Then adopt crystal pulling method film, pull rate is 1cm/min.By wet film at 100 DEG C of dry 10min, then by film at 240 DEG C of thermal pretreatment 10min, repeat aforesaid operations for several times, obtain precursor thin-film.Finally, by precursor thin-film in atmosphere, 550 DEG C process 1h, cool to room temperature with the furnace, obtain B:ZnO film.
The resistivity adopting four-point probe and Hall effect instrument testing film is 7.8 × 10-3 Ω cm, adopts the transmitance of ultraviolet-visible pectrophotometer testing film, can up to 94%, see Fig. 3.
Embodiment 4
By Zinc diacetate dihydrate, trimethyl-boron, monoethanolamine is dissolved in solvent ethylene glycol methyl ether, at 60 DEG C of evaporation backflow 5h, obtains transparent homogeneous gel.The doping of boron is that 0.8at%(is compared to zinc atom), the concentration of colloidal sol is 0.7mol/L.Secondly, employing common soda lime glass is substrate, by substrate successively with scrubbing powder-deionized water-hydrochloric acid-deionized water-acetone-deionized water cleaning, and purges with high pure nitrogen, dry for standby.Then adopt crystal pulling method film, pull rate is 4cm/min.By wet film at 100 DEG C of dry 10min, then by film at 240 DEG C of thermal pretreatment 10min, repeat aforesaid operations for several times, obtain precursor thin-film.Finally, by precursor thin-film in atmosphere, 600 DEG C process 1h, cool to room temperature with the furnace, obtain B:ZnO film.
The resistivity adopting four-point probe and Hall effect instrument testing film is 5.0 × 10-3 Ω cm, adopts the transmitance of ultraviolet-visible pectrophotometer testing film, can up to 95%, see Fig. 4.
The foregoing is only preferred embodiment of the present invention, not in order to limit the present invention, all any amendments done within the spirit and principles in the present invention, equivalent replacement and improvement etc., all should be included within protection scope of the present invention.
Claims (8)
1. the preparation method of boron-doping zinc-oxide film, comprises the following steps:
Add stablizer in the organic solution of Xiang Xinyuan, add boron source after being warming up to 25-80 DEG C, then ripening, obtain gel; Or
Zinc source, stablizer and boron source are dissolved in organic solvent, preparating mixture solution, by described mixture solution evaporation backflow, obtain gel; Wherein, the concentration of described gel is 0.4-1.2mol/L, and in described gel, the mol ratio of boron atom and zinc atom is 0.2 ~ 1.0:100;
Film and drying treatment are carried out to described gel, obtains precursor thin-film;
Heat-treat described precursor thin-film, cooling, obtains boron-doping zinc-oxide film.
2. the preparation method of boron-doping zinc-oxide film as claimed in claim 1, it is characterized in that, described zinc source is Zinc diacetate dihydrate or Glacial acetic acid zinc.
3. the preparation method of boron-doping zinc-oxide film as claimed in claim 1 or 2, it is characterized in that, described organic solvent is selected from the one in ethanol, methyl alcohol, Virahol and ethylene glycol monomethyl ether.
4. the preparation method of boron-doping zinc-oxide film as claimed in claim 1 or 2, it is characterized in that, described boron source is selected from the one in boric acid, trimethyl borate, trimethyl-boron and borine.
5. the preparation method of boron-doping zinc-oxide film as claimed in claim 1 or 2, it is characterized in that, described stablizer is monoethanolamine.
6. the preparation method of boron-doping zinc-oxide film as claimed in claim 1, it is characterized in that, the mol ratio of boron atom and zinc atom is 0.6 ~ 0.8:100.
7. the preparation method of boron-doping zinc-oxide film as claimed in claim 1, it is characterized in that, described film and drying treatment comprise the following steps:
Adopt dip-coating method film, pull rate is 1-8cm/min;
By wet film at 100-120 DEG C of dry 10-15min, then by film at 240-260 DEG C of thermal pretreatment 10-15min;
Repeat aforesaid operations, obtain described precursor thin-film.
8. the preparation method of boron-doping zinc-oxide film as claimed in claim 1, is characterized in that, heat-treating described precursor thin-film is described precursor thin-film is placed in 400-600 DEG C of process 1-3h, and heat-treating atmosphere is air.
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| CN116809347A (en) * | 2023-04-28 | 2023-09-29 | 厦门理工学院 | Preparation method of boron-magnesium co-doped zinc oxide film |
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