CN106652958B - Gate driving circuit and control method - Google Patents
Gate driving circuit and control method Download PDFInfo
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- CN106652958B CN106652958B CN201710029223.4A CN201710029223A CN106652958B CN 106652958 B CN106652958 B CN 106652958B CN 201710029223 A CN201710029223 A CN 201710029223A CN 106652958 B CN106652958 B CN 106652958B
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- 238000000034 method Methods 0.000 title claims abstract description 26
- 239000010409 thin film Substances 0.000 claims description 16
- 239000013078 crystal Substances 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 10
- 239000004973 liquid crystal related substance Substances 0.000 description 7
- 238000005516 engineering process Methods 0.000 description 4
- 238000004519 manufacturing process Methods 0.000 description 3
- 230000002708 enhancing effect Effects 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 238000012986 modification Methods 0.000 description 2
- 230000004048 modification Effects 0.000 description 2
- 238000012545 processing Methods 0.000 description 2
- 230000002441 reversible effect Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 238000013459 approach Methods 0.000 description 1
- 230000007850 degeneration Effects 0.000 description 1
- 239000010408 film Substances 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000000758 substrate Substances 0.000 description 1
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/34—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source
- G09G3/36—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters by control of light from an independent source using liquid crystals
- G09G3/3611—Control of matrices with row and column drivers
- G09G3/3674—Details of drivers for scan electrodes
- G09G3/3677—Details of drivers for scan electrodes suitable for active matrices only
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- Crystallography & Structural Chemistry (AREA)
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- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Abstract
The invention discloses gate driving circuit and control method, gate driving circuit includes multistage drive element of the grid, and every grade of drive element of the grid includes: pre-charge module, for being pre-charged according to prime gate drive signal to first node；Stable module, for changing the voltage of second node according to rear class gate drive signal；Output module, for generating the same level gate drive signal according to the voltage of first node, the voltage of second node and output clock signal, wherein, every grade of drive element of the grid further includes resetting module, and resetting module is for changing the level state of second node under the control of switching signal to compensate the threshold voltage of selected transistor.The gate driving circuit and control method of the embodiment of the present invention, so that the threshold voltage of selected transistor is compensated in stand-by mode, not only extend the service life of selected transistor, also reduce circuit power consumption by the way that resetting module is added.
Description
Technical field
The present invention relates to field of display technology more particularly to gate driving circuit and control methods.
Background technique
Liquid crystal display device (Liquid Crystal Display, LCD) has frivolous, energy saving, radiationless etc. many excellent
Point, therefore gradually replaced traditional cathode-ray tube (CRT) display.
Liquid crystal display is widely used in HD digital TV, desktop computer, personal digital assistant at present
(PDA), in the electronic equipments such as laptop, mobile phone, digital camera.
Liquid crystal display device mainly includes display panel and driving circuit.Wherein, display panel include multi-strip scanning line with
Multiple data lines, and every scan line and every data line intersect to form a pixel unit.Each pixel unit includes at least
One thin film transistor (TFT) (Thin-film Transistor, TFT).Driving circuit specifically includes that gate driving circuit (Gate
) and source electrode drive circuit (Source Driver) Driver.With the producer to the cost effective pursuit of liquid crystal display device with
And the raising of manufacturing process, it is set to the glass that the driving circuit integrated chip other than display panel is arranged at display panel originally
Become possibility on glass substrate.For example, integrated gate driving (Gate Driver InArray, GIA) technology exactly drives grid
Circuit integration is moved in the simplification for making liquid crystal display panel realize narrow frame and manufacturing process on display panel, while can
Reduce production cost.
The basic functional principle of display panel and driving circuit are as follows: gate driving circuit is by being electrically connected with scan line
It pulls up transistor and sends out gate drive signal to grid line, sequentially open the TFT of every a line, it is then same by source electrode drive circuit
When the pixel unit of one full line is charged to respectively required voltage, to show different grayscale.I.e. first by the grid of the first row
Pole driving circuit is pulled up transistor by it and opens the thin film transistor (TFT) of the first row, then by source electrode drive circuit to the first row
Pixel unit charge.When the pixel unit of the first row is charged, gate driving circuit just closes the row thin film transistor (TFT)
It closes, then the gate driving circuit of the second row is pulled up transistor by it and opens the thin film transistor (TFT) of the second row, then by source electrode
Driving circuit carries out charge and discharge to the pixel unit of the second row.So sequentially go down, when the pixel unit to last line is completed
When charging, just started to charge again from the first row.
Gate driving circuit generally includes multiple switch element, controls signal to multiple switch member using clock signal etc.
The grid of part applies positive voltage or negative voltage, to control the conducting and shutdown of multiple switch element, to export ideal grid
Driving signal.When the grid of each switch element is applied the overlong time of positive voltage, threshold voltage just be will increase, and cause
The power consumption of switch element increases and switching characteristic is deteriorated.Due to the partial switch element in current technology in gate driving circuit
Grid be constantly in high level state, when the working time of these switch elements is too long, will lead to the degeneration of switch performance,
Power consumption is not only increased, the service life of these switch elements can be also shortened.Simultaneously as the threshold voltage of these switch elements
Have occurred positive excursion, the function of gate driving circuit may entanglement, to influence the normal work of gate driving circuit.
Currently, the prior art, which generallys use following three kinds of methods, solves above-mentioned technical problem: 1, by the adjustment to processing procedure
Improve the threshold voltage shift degree of thin film transistor (TFT), however, this method has certain operation difficulty, and cannot be complete
Complete solution is determined the threshold voltage shift problem of thin film transistor (TFT)；2, using AC signal control gate drive circuit, though this method
The drift of threshold voltage can so be reduced to a certain extent, but the threshold voltage drift of thin film transistor (TFT) can not be fully solved
Shifting problem；3, the stable module of two groups of Time-sharing controls is designed, in gate driving circuit with too long switch of lengthening working hours
The service life of element since two groups of stable modules increase chip area, is unfavorable for realizing liquid crystal display device in this approach
Narrow frame.
Therefore, it is necessary to provide the new technical solution of one kind to overcome the above technical problem existing in the prior art.
Summary of the invention
The main technical problem to be solved in the present invention is to provide a kind of gate driving electricity that can be realized threshold voltage compensation
Road and control method.
According to an aspect of the present invention, a kind of gate driving circuit, including multistage drive element of the grid, every grade of institute are provided
Stating drive element of the grid includes: pre-charge module, for being pre-charged according to prime gate drive signal to first node；Surely
Cover half block, for changing the voltage of second node according to rear class gate drive signal；Output module has and the precharge mould
First input end that the output end of block is connected at the first node and with the output end of the stable module described the
The second input terminal being connected at two nodes, the output module is for voltage, the second node according to the first node
Voltage and output clock signal generate the same level gate drive signal, wherein every grade of drive element of the grid further include weight
Module is set, the level state that the resetting module is used to change under the control of switching signal the second node is selected to compensate
The threshold voltage of transistor.
Preferably, in every grade of drive element of the grid, the resetting module includes the first transistor, and described first is brilliant
The grid of body pipe receives the switching signal, source electrode receives power at very low levels voltage, drain electrode is connected with the second node.
Preferably, in every grade of drive element of the grid, the voltage value of the power at very low levels voltage is 0 or negative value.
Preferably, in every grade of drive element of the grid, the output module includes third transistor, the 4th transistor
And the 5th transistor, the 4th transistor are connected with the drain electrode of the 5th transistor and export the same level gate driving
The source electrode of signal, the third transistor and the 5th transistor is grounded, the drain electrode of the third transistor and the described 4th
The grid of transistor is connected in the first node, and the grid of the third transistor is connected with the grid of the 5th transistor
The output clock signal is received in the source electrode of the second node, the 4th transistor.
Preferably, in every grade of drive element of the grid, the selected transistor is the third transistor and described
5th transistor.
Preferably, in every grade of drive element of the grid, the prime gate drive signal is by the same level gate driving list
The preceding x grades of drive element of the grid output of member, the rear class gate drive signal are driven by rear x grades of grids of the same level drive element of the grid
Moving cell output, x are non-zero natural number.
Preferably, in every grade of drive element of the grid, the pre-charge module includes second transistor, and described second
The grid of transistor receives the prime gate drive signal, source electrode receives high level supply voltage or input clock signal or institute
State prime gate drive signal, drain electrode is connected with the first node.
Preferably, the transistor in drive element of the grid at different levels is realized by the thin film transistor (TFT) of n-type doping.
According to another aspect of the present invention, a kind of control method for gate driving circuit is also provided, comprising: provide use
In the switching signal of switching display pattern and standby mode；When the switching signal be it is invalid when, the gate driving circuit into
Enter the display pattern, the gate driving circuit exports gate drive signal；When the switching signal is effective, the grid
Pole driving circuit enters the standby mode, and the gate driving circuit changes the level state of selected transistor gate to compensate
The threshold voltage of the selected transistor.
Preferably, the gate driving circuit includes multistage drive element of the grid, and every grade of drive element of the grid includes
Pre-charge module, output module and stable module, the selected transistor are located in the output module, the selected crystal
The grid of pipe is connected with the output end of the stable module, and the switching signal drags down the output end voltage of the stable module
To change the level state of the grid voltage of the selected transistor.
Gate driving circuit according to an embodiment of the present invention and control method, by the way that weight is added in gate driving circuit
Set module so that gate driving circuit be chronically in display mode the threshold voltage of the thin film transistor (TFT) of on state to
It is compensated under machine mode, so that the film for having restored to be chronically on state in display mode in gate driving circuit is brilliant
The threshold voltage of body pipe, not only extends the service life of thin film transistor (TFT), while also reducing the power consumption of gate driving circuit, reducing
The error rate of gate driving circuit output.
Detailed description of the invention
By referring to the drawings to the description of the embodiment of the present invention, above-mentioned and other purposes of the invention, feature and
Advantage will be apparent from.
Fig. 1 shows the structural schematic diagram of the display device of first embodiment of the invention.
Fig. 2 shows the electrical block diagrams of i-stage drive element of the grid in the display device of first embodiment of the invention.
Fig. 3 shows the basic time diagram of the drive element of the grid of first embodiment of the invention.
Fig. 4 shows the part flow diagram of the control method of the gate driving circuit of second embodiment of the invention.
Specific embodiment
Hereinafter reference will be made to the drawings, and the present invention will be described in more detail.In various figures, identical element is using similar attached
Icon is remembered to indicate.For the sake of clarity, the various pieces in attached drawing are not necessarily to scale.In addition, may not show in figure
Certain well known parts out.
Many specific details of the invention, such as structure, material, size, the processing work of device is described hereinafter
Skill and technology, to be more clearly understood that the present invention.But it just as the skilled person will understand, can not press
The present invention is realized according to these specific details.
Fig. 1 shows the structural schematic diagram of the display device of first embodiment of the invention.
As shown in Figure 1, the display device 100 of first embodiment of the invention includes display panel 110, is integrated in display panel
On gate driving circuit and source electrode drive circuit 130.
Display panel 110 include line up m × n pixel unit 111, the n scan line G [1] to G [n] of m n array with
And m data line D [1] to D [m], m and n are respectively non-zero natural number.In each pixel unit 111 comprising pixel electrode and
For the transistor of the on or off pixel electrode, the transistor is, for example, thin film transistor (TFT).In display panel 110,
The grid phase of each transistor in the pixel unit of same a line (transverse direction shown in " row " such as corresponding diagram)
The fringe region of Lian Bingxiang display panel draws a scan line, side of the n row pixel unit to 110 one or both sides of display panel
Alternately draw scan line G [1] to G [n] in edge region；Positioned at same row (longitudinal direction shown in " column " such as corresponding diagram)
Pixel unit in the source electrode of each transistor be connected and draw a data line, m column pixel unit draws data line D respectively
[1] to D [m]；In each pixel unit, the drain electrode of transistor is connected with pixel electrode.
Source electrode drive circuit 130 is that data line D [1] to D [m] offer data-signal makes each pixel unit receive data
Voltage.
Gate driving circuit includes multistage drive element of the grid 120, and every grade of drive element of the grid is exported respectively for driving
A corresponding scan line G [1] on display panel to G [n] gate drive signal, for controlling the choosing of each row pixel unit
Logical and shutdown.
Fig. 2 shows the electrical block diagrams of i-stage drive element of the grid in the display device of first embodiment of the invention.
Wherein i is the natural number greater than 1 and less than n.
As shown in Fig. 2, i-stage drive element of the grid 120 includes pre-charge module 121, output module 122, stable module
123 and resetting module 124.Pre-charge module 121 is used for the prime gate driving exported according to prime drive element of the grid
Signal completes the precharge of first node Q, and output module 122 is used to provide the same level grid according to first node Q and second node QB
The same level gate drive signal VG [i] of pole driving unit output.Stable module 123 is used for defeated according to rear class drive element of the grid institute
Rear class gate drive signal VG [i+x] out changes the voltage of second node QB.Wherein, rear class gate drive signal can be by rear
The gate drive signal that one or more levels drive element of the grid is exported, i.e. x are non-zero natural number.
Pre-charge module can be realized by one or more transistors.Such as pre-charge module 121 shown in Fig. 2 includes crystalline substance
The grid of body pipe M4, transistor M4 receive prime gate drive signal VG [i-x], the source electrode that prime drive element of the grid is exported
Receive input clock signal clk_in or high level supply voltage Vdd or prime gate drive signal VG [i-x], drain electrode with
First node Q is connected.Wherein, the grid that prime gate drive signal can be exported by previous stage or multistage drive element of the grid
Driving signal, i.e. x are non-zero natural number.
Output module can be realized by multiple transistors.Such as output module 122 described in Fig. 2 include transistor M1 extremely
M3, wherein the drain electrode of transistor M1 is connected with the drain electrode of transistor M3 believes for exporting the gate driving of the same level drive element of the grid
Number VG [i], the grid of transistor M2 and the grid of transistor M3 are connected with second node QB, the grid and transistor of transistor M1
The drain electrode of M3 is connected with first node Q, and the source electrode of transistor M3 and the source electrode of transistor M2 receive the first power at very low levels voltage
The drain electrode of Vss (voltage of the first power at very low levels voltage Vss be, for example, 0 or negative value), transistor M1 receive output clock signal
clk_out。
Stable module 123 is supplied according to rear class gate drive signal VG [i+x] and stable clock signal clk_s, high level
The voltage of the signals such as piezoelectric voltage Vdd, the first power at very low levels voltage Vss control second node QB.
Resetting module 124 includes transistor M5, and wherein the grid of transistor M5 receives switching signal sw, source electrode receives second
Power at very low levels voltage VL (voltage of the second power at very low levels voltage VL be, for example, 0 or negative value), drain electrode and second node QB phase
Even.
Fig. 2 shows transistor M1 to M5 be n-type doping thin film transistor (TFT).
The display device of first embodiment of the invention mainly has display pattern and standby mode.In display mode, grid
The drive element of the grid at different levels for including in driving circuit pass through scan line line by line and export to each row pixel unit in pixel array
Gate drive signal VG [1] to VG [n], so that display panel shows image under the driving of source electrode drive circuit；In standby mould
Under formula, the display panel in display device does not show image.
Fig. 3 shows the basic time diagram of the drive element of the grid of first embodiment of the invention.
In display mode, the course of work of the drive element of the grid 120 of first embodiment of the invention is divided into multiple work
Stage, below with reference to the circuit structure of drive element of the grid shown in Fig. 2 and the timing point of drive element of the grid shown in Fig. 3
It is not described.
As shown in Fig. 3 and Fig. 2, in the pre-charging stage T1 of drive element of the grid, output clock signal clk_out is low
The voltage of level, the second node QB that stable module 123 provides is low level, and transistor M2 and M3 are in close state at this time.
Meanwhile the gate drive signal VG [i-x] of prime drive element of the grid output is high level, therefore transistor M4 is connected and starts
It charges to first node Q, so that transistor M1 is converted by off state on state.Due to exporting clock signal clk_
Out is low level, therefore the gate drive signal VG [i] of the same level drive element of the grid output also exports low level.
In the charging stage T2 of drive element of the grid, the gate drive signal VG [i- of prime drive element of the grid output
X] it is low level, the voltage for the second node QB that stable module 123 exports is low level.Therefore transistor M4 becomes turning off shape
State, transistor M2 and M3 are also at off state, and first node Q is caused to be in vacant state.In the most elementary of charging stage T2
Section, output clock signal clk_out are high level by low level jump.Transistor M1 is in the conductive state, drain electrode and source electrode
Between voltage rapid increase, the current potential of hanging first node Q also raises therewith, realizes bootstrapping (Bootstrap).Due to crystalline substance
The grid voltage of body pipe M1 increases, the ducting capacity enhancing of transistor M1, so that the driving capability of drive element of the grid obtains
Enhancing.
In the drop-down stage T3 of drive element of the grid, output clock signal clk_out is low level, stable module 123
The voltage of the second node QB of output is high level, and transistor M2 and M3 is in the conductive state.With the same level drive element of the grid pair
The charge on transistor gate in the scan line G [i] answered connected pixel unit can be discharged by transistor M2.At this
In the process, transistor M1 is gradually changed into off state by state, before transistor M1 shutdown, due to output clock letter
Number clk_out is in low level state, brilliant in the connected pixel unit of scan line G [i] corresponding with the same level drive element of the grid
Charge on body tube grid still can be discharged by M1.To include two electric discharge roads in each drive element of the grid 120
Diameter, so that the gate drive signal VG [i] that the same level drive element of the grid is exported is converted to low level by high level.
In the low level maintenance stage T4 of drive element of the grid, stable module 123 persistently provides second node QB high
Level voltage, so that transistor M2 and M3 are continuously on state.To which the voltage of first node Q is pulled down to by transistor M3
Low level, i.e. transistor M1 are held off；Transistor M2 conducting, so that the grid that the same level drive element of the grid is exported drives
Dynamic signal VG [i] is maintained at low level state.However in this stage, since the voltage of second node QB will be kept for a long time
In high level, therefore transistor M2 and M3 will be kept on for a long time.Each transistor is by low stability, low reliability
TFT realize, due to TFT for a long time receive forward bias will lead to TFT threshold voltage occur positive excursion, in this rank
Positive excursion will occur for section, the threshold voltage of transistor M2 and M3.
Above in display mode to the display device that the description content of each stage T1 to T4 is first embodiment of the invention
Temporal aspect, switching signal sw is in low level at this time.Come temporarily when the tsw moment, drive element of the grid 120 enters standby mould
Formula.
In stand-by mode, switching signal sw is high level by low level jump.Due to resetting module 124 in, crystal
Grid reception switching signal sw, the second power at very low levels voltage VL of source electrode reception of pipe M5 be (the second power at very low levels voltage VL's
Voltage value be, for example, 0 or negative value), therefore transistor M5 is connected so that the voltage of second node QB is pulled low, transistor M2 and M3
The level state of grid voltage change, i.e. the grid bias reverse phase of transistor M2 and M3.Therefore in stand-by mode, transistor
The threshold voltage of M2 and M3 can generate the positive excursion generated under reverse phase drift motion compensation display pattern, make transistor M2 and M3
Switching characteristic is restored, to reduce the unnecessary power consumption that drive element of the grid is generated due to the drift of threshold voltage.
Gate driving circuit according to a first embodiment of the present invention, by the way that resetting module is added in gate driving circuit,
So that the threshold voltage that gate driving circuit is chronically at the transistor of on state in display mode obtains in stand-by mode
To compensation, to restore the threshold voltage of these transistors, the service life of these transistors is not only extended, is also reduced simultaneously
The power consumption of gate driving circuit, the error rate for reducing gate driving circuit output.
Fig. 4 shows the part flow diagram of the control method of the gate driving circuit of second embodiment of the invention.Including
Step S201 to S203.
Gate driving circuit includes multistage drive element of the grid, every grade of drive element of the grid mainly include pre-charge module,
Output module and stable module.
In step s 201, it is provided for handing off the switching signal sw of display pattern and standby mode.
There are two types of operating modes for gate driving circuit tool: display pattern and standby mode.(the example when switching signal sw is invalid
Such as when switching signal sw is low level), execute step S202；When switching signal sw is effective (such as when switching signal sw is
When high level), execute step S203.
In step S202, gate driving circuit is in display pattern.Gate driving circuit drives display panel to show
Image.
In step S203, display panel is closed, and gate driving circuit is in standby mode.Gate driving circuit changes choosing
The level state of the grid voltage of thin film transistor (TFT) is determined to compensate the threshold voltage of selected thin film transistor (TFT).
Selected transistor is located in output module, and the grid of selected transistor is connected with the output end of stable module.To
Under machine mode, switching signal is effective, and the output end voltage of stable module is reduced to low level to change the grid of selected transistor
The level state of voltage.
The control method of gate driving circuit according to a second embodiment of the present invention, standby without performing image display
Level is carried out to the grid voltage for the transistor for being chronically on state in gate driving circuit in display mode under mode
The overturning of state not only extends the service life of these transistors, while also reducing to restore the threshold voltage of these transistors
The power consumption of gate driving circuit, the error rate for reducing gate driving circuit output.
It should be noted that herein, relational terms such as first and second and the like are used merely to a reality
Body or operation are distinguished with another entity or operation, are deposited without necessarily requiring or implying between these entities or operation
In any actual relationship or order or sequence.Moreover, the terms "include", "comprise" or its any other variant are intended to
Non-exclusive inclusion, so that the process, method, article or equipment including a series of elements is not only wanted including those
Element, but also including other elements that are not explicitly listed, or further include for this process, method, article or equipment
Intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that
There is also other identical elements in process, method, article or equipment including the element.
It is as described above according to the embodiment of the present invention, these embodiments details all there is no detailed descriptionthe, also not
Limiting the invention is only the specific embodiment.Obviously, as described above, can make many modifications and variations.This explanation
These embodiments are chosen and specifically described to book, is principle and practical application in order to better explain the present invention, thus belonging to making
Technical field technical staff can be used using modification of the invention and on the basis of the present invention well.The present invention is only by right
The limitation of claim and its full scope and equivalent.
Claims (10)
1. a kind of gate driving circuit, including multistage drive element of the grid, every grade of drive element of the grid include:
Pre-charge module, for being pre-charged according to prime gate drive signal to first node；
Stable module, for changing the voltage of second node according to rear class gate drive signal；
Output module, have the first input end being connected at the first node with the output end of the pre-charge module and
The second input terminal being connected at the second node with the output end of the stable module, the output module are used for according to institute
It states the voltage of first node, the voltage of the second node and output clock signal and generates the same level gate drive signal,
Wherein, every grade of drive element of the grid further includes resetting module, and the resetting module is used for the control in switching signal
The lower level state for changing the second node is to compensate the threshold voltage of selected transistor.
2. gate driving circuit according to claim 1, wherein in every grade of drive element of the grid, the resetting
Module includes the first transistor, and the grid of the first transistor receives the switching signal, source electrode receives power at very low levels electricity
Pressure, drain electrode are connected with the second node.
3. gate driving circuit according to claim 2, wherein in every grade of drive element of the grid, the low electricity
The voltage value of flat supply voltage is 0 or negative value.
4. gate driving circuit according to claim 1, wherein in every grade of drive element of the grid, the output
Module includes third transistor, the 4th transistor and the 5th transistor, the 4th transistor and the 5th transistor
Drain electrode is connected and exports the same level gate drive signal, the source electrode ground connection of the third transistor and the 5th transistor,
The drain electrode of the third transistor and the grid of the 4th transistor are connected in the first node, the third transistor
The grid of grid and the 5th transistor is connected in the second node, and the source electrode of the 4th transistor receives the output
Clock signal.
5. gate driving circuit according to claim 4, wherein described selected in every grade of drive element of the grid
Transistor is the third transistor and the 5th transistor.
6. gate driving circuit according to claim 1, wherein in every grade of drive element of the grid, the prime
Gate drive signal by the same level drive element of the grid preceding x grades of drive element of the grid export, the rear class gate drive signal by
Rear x grades of drive element of the grid of the same level drive element of the grid export, and x is non-zero natural number.
7. gate driving circuit according to claim 6, wherein in every grade of drive element of the grid, the preliminary filling
Electric module includes second transistor, and the grid of the second transistor receives the prime gate drive signal, and described second is brilliant
The source electrode of body pipe receives high level supply voltage or input clock signal or the prime gate drive signal, second crystal
The drain electrode of pipe is connected with the first node.
8. gate driving circuit according to any one of claims 1 to 7, wherein the crystal in drive element of the grid at different levels
Pipe is realized by the thin film transistor (TFT) of n-type doping.
9. a kind of control method for gate driving circuit, the gate driving circuit includes multistage drive element of the grid, often
The grade drive element of the grid provides the same level gate drive signal respectively and respectively includes selected transistor, which is characterized in that institute
Stating control method includes:
In every grade of drive element of the grid, node voltage is provided according to rear class gate drive signal, when the node voltage
When for the first level state, the selected transistor turns are so that the same level gate drive signal is inactive level state；
It is provided for handing off the switching signal of display pattern and standby mode；
When the switching signal is invalid, the gate driving circuit enters the display pattern to drive image to show；
When the switching signal is effective, the gate driving circuit enters the standby mode, every grade of gate driving
Unit changes the level state of the node voltage to compensate the threshold voltage of the selected transistor.
10. control method according to claim 9, wherein the gate driving circuit includes multistage drive element of the grid,
Every grade of drive element of the grid includes pre-charge module, output module and stable module, and the selected transistor is located at institute
It states in output module, the grid of the selected transistor is connected with the output end of the stable module, and the switching signal is by institute
The output end voltage for stating stable module is dragged down to change the level state of the grid voltage of the selected transistor.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710029223.4A CN106652958B (en) | 2017-01-16 | 2017-01-16 | Gate driving circuit and control method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710029223.4A CN106652958B (en) | 2017-01-16 | 2017-01-16 | Gate driving circuit and control method |
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| CN106971697A (en) * | 2017-05-16 | 2017-07-21 | 昆山龙腾光电有限公司 | Display device |
| TWI713008B (en) * | 2019-11-07 | 2020-12-11 | 友達光電股份有限公司 | Driving circuit and the operation method thereof |
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| JP4036184B2 (en) * | 2003-11-28 | 2008-01-23 | セイコーエプソン株式会社 | Display device and driving method of display device |
| KR102126799B1 (en) * | 2013-10-25 | 2020-06-26 | 삼성디스플레이 주식회사 | Dcdc converter, display apparatus having the same and method of driving display panel using the same |
| CN104050943B (en) * | 2014-06-10 | 2016-06-08 | 昆山龙腾光电有限公司 | A kind of gate driver circuit and use its display unit |
| CN205069085U (en) * | 2015-10-28 | 2016-03-02 | 京东方科技集团股份有限公司 | Shift register , grid integrated drive electronics and display device |
| CN105913826B (en) * | 2016-06-30 | 2018-05-08 | 京东方科技集团股份有限公司 | Shift register cell and driving method, shift-register circuit and display device |
| CN106205524A (en) * | 2016-07-13 | 2016-12-07 | 昆山龙腾光电有限公司 | The grid drive method of a kind of display panels, system and device |
| CN106297704B (en) * | 2016-08-31 | 2019-06-11 | 深圳市华星光电技术有限公司 | A kind of gate driving circuit |
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