CN106644096A - 辐射传感器器件和方法 - Google Patents

辐射传感器器件和方法 Download PDF

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CN106644096A
CN106644096A CN201611239967.0A CN201611239967A CN106644096A CN 106644096 A CN106644096 A CN 106644096A CN 201611239967 A CN201611239967 A CN 201611239967A CN 106644096 A CN106644096 A CN 106644096A
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O·吉尔斯
E·海因斯
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Abstract

本发明涉及辐射传感器器件和方法。一种改进的辐射传感器器件，包括附着至集成电路芯片的盖帽，所述集成电路芯片包括位于表面上的辐射传感器，并且盖帽间隔开地覆盖该辐射传感器；盖帽和具有辐射传感器的集成电路芯片被封装在封装物中，并且盖帽和集成电路芯片中至少一个的靠近辐射传感器的一个透明部分在封装物的边界处暴露。

Description

辐射传感器器件和方法
本申请是申请日为2006年9月20日、申请号为200680034968.X、发明名称为“辐射传感器器件和方法”的发明专利申请的分案申请。
相关申请
本申请要求2005年9月21日申请的美国临时申请No.60/19,127的权益。该美国申请通过参照结合于此。
技术领域
本发明涉及一种使用工业标准封装轮廓的改进型辐射传感器器件以及方法。
背景技术
常规的辐射传感器器件，比如红外(IR)传感器，包括在集成电路芯片的活性表面中微加工并且安装于有窗的金属盖帽中(窗允许传感器暴露于要感测的红外射线)的红外传感元件。虽然这种方法是令人满意的，但是其也是相当昂贵的。常规的集成电路封装使用引线框架，该引线框架连同集成电路芯片一起密封在环氧树脂(举例来说，Sumitomo G700)中。引线框架通常包括支撑集成电路芯片的桨状物和用来接收用于集成电路芯片的导线接头的引线。这比常规辐射传感器器件中所使用的封装要便宜，但是塑料一般对于要感测应的辐射(举例来说，红外)是不透明的，并且因此不适合与具有辐射传感器的集成电路芯片一起使用。
发明内容
因此本发明的一个目标是提供一种改进的辐射传感器器件及其制造方法。
因此本发明的一个目标是提供一种用于辐射传感器器件的改进封装方法。
因此本发明的一个目标是提供一种其使用工业标准化封装轮廓并且避免需要定制包装的改进封装方法。
因此本发明的一个目标是提供一种简单但是有效且不昂贵的改进封装方法。
因此本发明的一个目标是提供这种克服模型渗料的改进辐射传感器器件以及方法。
因此本发明的一个目标是提供了这种可使用预模塑封装的改进传感器器件和方法。
因此本发明的一个目标是提供了一种产生更有效辐射感测的改进封装方法。
因此本发明的一个目标是提供一种能使用透镜以提高辐射感测效果的改进封装方法。
本发明来自于实现能使用工业标准化封装轮廓并产生改进操作的改进辐射传感器器件和封装，能通过如下来实现：将盖帽附着至集成电路芯片，所述芯片的表面上具有辐射传感器，并且盖帽间隔开地覆盖辐射传感器，盖帽和集成电路芯片中的至少一个具有靠近辐射传感器且对将要感测的辐射透明的至少一部分。
然而，在其它实施例中，本发明无需实现所有这些目标并且其权利要求不应当限制于能实现这些目标的结构或方法。
本发明的特点在于一种包括集成电路芯片的辐射传感器器件，并且集成电路芯片的表面上具有辐射传感器。盖帽附着至集成电路芯片并且间隔开地覆盖辐射传感器。盖帽和集成电路芯片中的至少一个具有靠近辐射传感器且对将要感测的辐射透明的至少一个部分。
在优选实施例中，辐射传感器可位于集成电路芯片的活性表面上并且盖帽可包括辐射透明部分。辐射传感器可位于集成电路芯片的非活性表面上并且集成电路可包括辐射透明部分。集成电路芯片可包括位于其活性表面或其非活性表面上的焊料凸块。盖帽和具有辐射传感器的集成电路芯片可布置于封装物中并且非活性表面在封装物的边界处暴露。集成电路芯片的靠近辐射传感器的至少一个部分可对于将要感测的辐射而言是透明的。盖帽和具有辐射传感器的集成电路芯片可布置于盖帽在封装物的边界处暴露的封装物中。盖帽的靠近辐射传感器的至少一个部分可对于将要感测的辐射是透明的。盖帽和具有辐射传感器的集成电路芯片可连同引线框架一起布置于封装物中。引线框架可包括暴露的桨状物或隐藏的桨状物。集成电路芯片可以是附接至引线框架的倒装芯片。盖帽和具有辐射传感器的集成电路芯片可布置于封装物中。封装物可包括凹槽。盖帽可在凹槽中暴露。集成电路芯片可在凹槽中暴露。还可以有具有基座的预模塑封装物，基座用于支撑盖帽和具有辐射传感器的集成电路芯片。预模塑封装物可用封装物填充至直到盖帽但没有覆盖盖帽。在盖帽上方可具有盖，盖至少具有对于将要感测的辐射而言透明的一部分。传感器可以是红外辐射传感器。透明部分可以对于红外辐射是透明的。盖帽可提供位于辐射传感器处的真空。盖帽可包括透镜。封装物可以是塑料的。封装物可以是环氧树脂的。
本发明的特点还在于一种包括集成电路芯片的辐射传感器器件，集成电路芯片的表面上具有集成辐射传感器。盖帽附着至集成电路芯片并且间隔开地覆盖辐射传感器。盖帽和集成电路芯片中的至少一个至少具有靠近辐射传感器且对于要被感测的辐射而言是透明的部分。还有封装盖帽和具有辐射传感器的集成电路芯片的封装物，其透明部分暴露于封装物的边界处。
在优选实施例中，封装物可包括塑料。
本发明的特点还在于一种用于形成辐射传感器器件的方法，包括将盖帽附着至其表面上具有辐射传感器的集成电路芯片，并且盖帽间隔开地覆盖辐射传感器。该方法还包括将盖帽和具有辐射传感器的集成电路芯片封装在封装物中，并且盖帽和集成电路芯片中至少一个靠近辐射传感器的透明部分在封装物的边界处暴露。
在优选实施例中，封装物可包括塑料。真空可在盖帽中形成于辐射传感器周围。牺牲层可形成于透明部分上方并且被蚀刻掉以将出现在透明部分处的任何模塑渗料移除。可以有适应层来防止透明部分处的模塑渗料并保护透明部分。适应层可以在周边具有孔隙。
附图说明
从以下优选实施例的描述和附图中，本领域技术人员将能想到其它方面、特点以及优点，其中：
图1是根据本发明使用封装物的改进型集成电路芯片辐射传感器封装的示意性侧视图，其具有位于活性表面上且通过集成电路暴露的非活性表面来感测的辐射传感器；
图1A和1B是示出用来代替图1中牺牲层的适应模型插入物的侧视图；
图2是类似于图1的视图，但是具有位于活性表面上且通过暴露盖帽活性表面上的辐射传感器；
图3是类似于图2的视图，但是在引线框架中使用半蚀刻的桨状物；
图3A是图3的顶视图，其中示出了半蚀刻桨状物的悬挂；
图4是类似于图2的视图，但是具有经由通孔和焊料凸块连接至引线框架的导线的活性表面；
图5是一种改进型集成电路芯片辐射传感器封装的示意性侧面横截视图，其未密封并且具有通过通孔连接至焊料凸块的活性表面；
图6是类似于图5的视图，活性表面直接连接至焊料凸起并且示出了安装在靠近盖帽和辐射传感器地具有孔径或窗的电路板上；
图7是类似于图2的视图，在盖帽上方的封装物中具有孔；
图8是根据本发明的预模制封装的示意性简图；并且
图9是根据本发明在一个封装中制作辐射传感器的方法的框图。
具体实施方式
除了在下面所公开的优选实施例或实施例以外，本发明能具有其它实施例并且能以多种方式实践或执行。因此，可以理解到，本发明并不将其应用限制于下面描述中所述或附图中所示的构造细节和部件布置。如果此处仅描述一个实施例，但是其权利要求并不限于该实施例。此外，其权利要求不应限制性地阅读，除非存在着清楚且有力的证据表明了某种排除、限制或放弃。
图1中示出了一种根据发明的改进型辐射传感器器件10，其包括集成电路芯片12和辐射传感器14。辐射传感器14可以是通过在集成电路芯片12的表面上微处理所形成的红外传感器。这种技术公知为在1982年IEEE关于电子器件的论文集中G.R.Lahiji,K.D.Wise的论文"A batch-fabricated silicon thermopile infrared detector"中有教导，该论文整体地通过参考结合于此。盖帽16利用胶粘剂(比如在美国专利No.6,893,574中教导的可从美国Ohio州Cleveland市Ferro公司购得的Ferro 11-036，该美国专利整体地通过参考结合于此)附着至集成电路芯片12。盖帽16保护辐射传感器14不受操作和环境的损害。还可以在空间18中形成真空，这通过最小化对流性和传导性传热提高了辐射性热能的传递，这样就为辐射传感器产生了提高的效率，尤其是在辐射传感器是例如红外传感器时。辐射传感器位于集成电路芯片12的活性表面20上。导线22和24将集成电路芯片12的活性表面20互连至引线框架30的引线26和28。
根据本发明，引线框架30、盖帽16和带有辐射传感器14的集成电路芯片12的整个组件封装在封装物32中，封装物32可以是塑料、环氧树脂、或某种其它材料，例如可从日本Sumitomo Bakelite公司购得的Sumitomo G700。集成电路芯片12的非活性表面34在封装物32的周边36处暴露。假定辐射传感器是红外传感器，那么芯片12可形成为至少其一部分38对于红外辐射是透明的。这能通过使集成电路芯片材料的一部分由对红外辐射而言是透明的硅制成或者通过使集成电路芯片的整个基片由硅制成来完成。如果使用了其它类型的辐射，例如可见辐射，透明介质将不是硅，例如玻璃或二氧化硅材料。
在封装过程期间有些封装物32经常会在透明部分38上渗出40。为了克服这个问题并防止盖帽表面受到与模型的硬质表面相接触而引起的机械损伤，在封装之前，在集成电路芯片12的非活性表面34上沉积有牺牲层42。其可以是水溶材料，比如可从英格兰Surrey的Concoat公司购得的Concoat CM553，其能与模型渗料40一起洗掉从而使暴露的非活性表面34洁净。克服这些问题的另一种方法是使用具有与盖帽接触的“柔软”表面的模型。这将在盖帽上稍微变形，防止机械接触损伤和任何树脂溢料。这种可选方案在图1A中示出，其中对在图1A中对具有上模腔和下模腔102、104的常规模腔100进行修改以接受适应嵌件106，例如由荷兰Bilthoven的ASM International NV制造的橡胶涂覆嵌件，其在一定数目的循环次数之后需要更换。这个嵌件的目的是确保嵌件106和盖帽16h的表面之间的压缩密封，足以防止模塑材料的进入，否则将影响IR辐射通过盖帽的传输。嵌件在一定数目的循环次数之后可以更换。可选地，嵌件106可以用图1B中具有孔隙108的周边嵌件106a替换。在操作中，再参照图1，红外辐射44穿过集成电路芯片12的透明部分38以触发红外传感器14。来自其它方向(也就是试图穿过盖帽16达到红外传感器14)的红外辐射将被封装物32阻止。
在另一构造中，图2，辐射传感器器件10a将盖帽16a的一个表面46置于封装物32a的边界36a处。盖帽16a那么就包括透明部分38a，其例如在一个实施例中将是对红外辐射44a透明的。那么辐射44a将穿过透明部分38a和真空18a达到集成电路芯片12a的活性表面20a处的辐射传感器14a。集成电路芯片12a的非活性表面34a在这里示出于连同引线26a和28a形成一部分引线框架30a的桨状物48上。
可选地，在传感器器件10b中，图3，暴露的或全部的桨状物48可由隐藏或半蚀刻的桨状物48b替换，或者从引线框架30b的角部悬挂在弹簧(比如图3A中的支撑元件50、52、54和56)上以提供在封装过程期间相对于封装物和模型的边界36b保持盖帽16b的表面46b的偏压力。
在传感器器件10c中，图4，图1、2和3中相应的引线22、24、22a、24a、22b、24b由将活性表面20c互连至引线框架30c的引线26c和28c的通孔22c和24c以及倒装芯片焊料凸块22c和24cc再次，辐射44c(其可以是红外辐射)穿过盖帽16c的透明部分38c，其表面46c显示在封装物32c的边界36c处。其然后穿过包含真空的体积18c以达到辐射传感器14c。
在另一实施例中，辐射传感器器件10d，图5，采用承载辐射传感器14d的集成电路芯片12d，辐射传感器14d由附接至集成电路芯片12d并覆盖辐射传感器14d以形成包含真空的体积18d的盖帽16d所保护。这个实施例中没有包括封装物。通过通孔22d、24d和倒装芯片焊料凸块22dd和24dd从集成电路芯片12d的活性表面20d进行电连接。这里辐射44d可通过盖帽16d的透明部分38d进入，然后穿过体积或真空18d达到辐射传感器14d。可选地或者另外地，辐射44dd可穿过集成电路芯片12d的透明部分38dd。如果需要，可借助于涂层防止辐射穿过表面12d的一部分或全部。可选地，集成电路芯片12e，在传感器器件10e中，图6，能倒装以使得活性表面20e处于底部上并且直接连接至焊球或凸块22e、24e。在此情况下，辐射44e能在盖帽16e的表面46e处穿过透明部分38e，然后穿过体积18e，到达辐射传感器14e和/或如同辐射44ee那样在穿过集成电路芯片12e的透明部分38ee时可从非活性表面穿入。
在另一构造中，器件10f，图7，可包括封装物32f中盖帽16f上方的开口60以使得辐射44f能穿过至透明部分38f，然后穿过体积18f到达辐射传感器14f。开口60能用对于辐射44f透明的材料62填充。例如，如果辐射44f是红外辐射，那么开口60能为孔的或者填充红外透明材料62，比如硅。
在器件10g的又一实施例中，图8，集成电路芯片12g和盖帽16g可安装在常规的预模塑封装66中，该封装66包括具有引线26g和28g的基座30g以及桨状物48g和壁68。封装物32g然后可添加至通常不超过表面46g以使得封装物32g的边界36g与表面46g一致或在其下面。或者封装物可填充至顶部(示出为32gg)但是留下可开口或填充有透明介质的孔62g。盖70还可与透明部分72一起使用。其将利用胶粘剂(比如可从美国中部Rancho Dominguez的Ablestik公司购得的Ablestik 84-3J)在74处附着至壁68。
根据本发明制造辐射传感器器件的方法包括在辐射传感器80处将盖帽附着至集成电路芯片，图9。在优选实施例中，在辐射传感器82处，真空可形成于盖帽下面。而且在优选实施例中，比如Concoat CM553之类的牺牲层可在透明部分84处应用于盖帽或集成电路芯片。此后，施加封装物86并移除任何牺牲层88。关于此的又一变化是使用具有适应表面的模型。引线框架和模具定位在模型中以使得盖帽将要暴露的表面压靠在适应表面上。这防止了模型溢料达到暴露的盖帽表面。
尽管本发明的特定特点在一些附图中示出而没有在其它附图中示出，但是这仅是为了方便，因为根据本发明每个特点可与任何或所有其它特点相组合。这里使用的词语“包括”、“包含”、“具有”和“带有”应当宽泛和全面地解释并且不应当限制于任何物理互连。而且，本申请中公开的任何实施例都不视为是仅有的可能实施例。
另外，在本专利进行专利申请期间出现的任何修改不是对于所提交的申请中出现的任何权利要求要素的放弃：尽管本领域技术人员可合理地预期设计出在文字上涵盖所有可能等同概念的权利要求，但是在修改时很多等同概念是不能预知的并且超越了将被放弃的公平解释(如有有的话)，因此修改之下的基本原则不具有对于很多等同概念的肤浅关系，和/或存在着很多其它原因使得不能期望申请人描述对于所修改的任何权利要求要素的某些不重要的替换。
其它实施例对于本领域技术人员来说是很明显的并且处于所附权利要求的范围内。

Claims (1)

1.一种辐射传感器器件，包括：
集成电路芯片，其包括位于所述集成电路芯片的表面上的集成辐射传感器；和
附着至所述集成电路芯片并且间隔开地覆盖所述辐射传感器的盖帽，所述盖帽和所述集成电路芯片中的至少一个具有靠近所述辐射传感器且对于要被感测的辐射而言是透明的至少一部分。
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EP1926979A4 (en) 2009-10-28
CN101268345A (zh) 2008-09-17
WO2007038144A3 (en) 2007-07-26
WO2007038144A2 (en) 2007-04-05
US7897920B2 (en) 2011-03-01
EP2256471B1 (en) 2016-07-13
EP2256471A2 (en) 2010-12-01
EP2256471A3 (en) 2011-06-01
CN106644096B (zh) 2019-11-15
US20070063145A1 (en) 2007-03-22
EP1926979A2 (en) 2008-06-04

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