CN106601854A - Heterojunction solar cell and manufacturing method thereof - Google Patents
Heterojunction solar cell and manufacturing method thereof Download PDFInfo
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- CN106601854A CN106601854A CN201611065521.0A CN201611065521A CN106601854A CN 106601854 A CN106601854 A CN 106601854A CN 201611065521 A CN201611065521 A CN 201611065521A CN 106601854 A CN106601854 A CN 106601854A
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- aluminum oxide
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- 238000004519 manufacturing process Methods 0.000 title abstract description 7
- 229910002601 GaN Inorganic materials 0.000 claims abstract description 32
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 24
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 24
- 239000010703 silicon Substances 0.000 claims abstract description 24
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims abstract description 23
- 238000002360 preparation method Methods 0.000 claims abstract description 23
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims abstract description 22
- 238000000034 method Methods 0.000 claims abstract description 13
- 238000000151 deposition Methods 0.000 claims abstract description 11
- 239000000758 substrate Substances 0.000 claims abstract description 11
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910052593 corundum Inorganic materials 0.000 claims abstract description 10
- 229910001845 yogo sapphire Inorganic materials 0.000 claims abstract description 10
- 238000000137 annealing Methods 0.000 claims abstract description 9
- 230000008021 deposition Effects 0.000 claims abstract description 9
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims abstract description 6
- 238000005498 polishing Methods 0.000 claims abstract description 6
- 229910052709 silver Inorganic materials 0.000 claims abstract description 6
- 239000004332 silver Substances 0.000 claims abstract description 6
- 239000010408 film Substances 0.000 claims description 45
- 238000000231 atomic layer deposition Methods 0.000 claims description 7
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 claims description 6
- HEMHJVSKTPXQMS-UHFFFAOYSA-M Sodium hydroxide Chemical compound [OH-].[Na+] HEMHJVSKTPXQMS-UHFFFAOYSA-M 0.000 claims description 6
- 229910052782 aluminium Inorganic materials 0.000 claims description 5
- 239000004411 aluminium Substances 0.000 claims description 5
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 5
- 230000008020 evaporation Effects 0.000 claims description 5
- 238000001704 evaporation Methods 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- KWYUFKZDYYNOTN-UHFFFAOYSA-M Potassium hydroxide Chemical compound [OH-].[K+] KWYUFKZDYYNOTN-UHFFFAOYSA-M 0.000 claims description 3
- 229910052786 argon Inorganic materials 0.000 claims description 3
- 150000004767 nitrides Chemical class 0.000 claims description 3
- 239000010409 thin film Substances 0.000 claims description 3
- 230000008901 benefit Effects 0.000 abstract description 4
- 230000006798 recombination Effects 0.000 abstract description 2
- 238000005215 recombination Methods 0.000 abstract description 2
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 8
- 239000000377 silicon dioxide Substances 0.000 description 4
- 230000008859 change Effects 0.000 description 3
- 238000005516 engineering process Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- 230000005540 biological transmission Effects 0.000 description 1
- 230000007812 deficiency Effects 0.000 description 1
- 238000010586 diagram Methods 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 238000010894 electron beam technology Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 239000002994 raw material Substances 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/04—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices
- H01L31/06—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers
- H01L31/072—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type
- H01L31/074—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof adapted as photovoltaic [PV] conversion devices characterised by potential barriers the potential barriers being only of the PN heterojunction type comprising a heterojunction with an element of Group IV of the Periodic Table, e.g. ITO/Si, GaAs/Si or CdTe/Si solar cells
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B82—NANOTECHNOLOGY
- B82Y—SPECIFIC USES OR APPLICATIONS OF NANOSTRUCTURES; MEASUREMENT OR ANALYSIS OF NANOSTRUCTURES; MANUFACTURE OR TREATMENT OF NANOSTRUCTURES
- B82Y30/00—Nanotechnology for materials or surface science, e.g. nanocomposites
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
- H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
- H01L21/02263—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase
- H01L21/02271—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition
- H01L21/0228—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process deposition from the gas or vapour phase deposition by decomposition or reaction of gaseous or vapour phase compounds, i.e. chemical vapour deposition deposition by cyclic CVD, e.g. ALD, ALE, pulsed CVD
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- H—ELECTRICITY
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- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Chemical Kinetics & Catalysis (AREA)
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- Crystallography & Structural Chemistry (AREA)
- Life Sciences & Earth Sciences (AREA)
- Photovoltaic Devices (AREA)
Abstract
The invention discloses a heterojunction solar cell and a manufacturing method thereof. The heterojunction solar cell comprises a silicon wafer substrate; an aluminum oxide film is arranged on the silicon wafer substrate; a gallium nitride film is arranged on the aluminum oxide film; and a GaN/Al2O3/Si heterojunction structure is formed. The manufacturing method comprises steps of polishing, aluminum oxide film deposition, annealing, gallium nitride film deposition, and ITO transparent conductive film and silver gate electrode preparation. The heterojunction solar cell has the advantages that the GaN/Al2O3/Si heterojunction structure is provided; carrier recombination caused by lattice mismatch between gallium nitride and the silicon wafer substrate can be effectively solved, the minority carrier service life of the heterojunction solar cell is greatly improved, and the process of the manufacturing method is simple.
Description
Technical field
The invention belongs to solar cell device manufacturing technology field, and in particular to a kind of heterojunction solar battery and its system
Preparation Method.
Background technology
At present, the highest conversion efficiency of photovoltaic silica-based solar cell in the industry has been fairly close to silicon substrate up to 26.33%
The theoretical efficiency limit 29% of solaode.For existing silica-based solar cell, its transformation efficiency be difficult into
The room for promotion of one step.
The content of the invention
The technical problem solved needed for of the invention is to overcome the deficiencies in the prior art, there is provided a kind of preparation process is simple, turned
Change heterojunction solar battery of efficiency high and preparation method thereof.
To solve above-mentioned technical problem, the technical scheme that the application is adopted is：
A kind of heterojunction solar battery, the heterojunction solar battery include silicon chip substrate, and the silicon chip substrate is provided with oxidation
Aluminium film, the aluminum oxide film are provided with gallium nitride film, form GaN/Al2O3/ Si heterojunction structures.
In above-mentioned heterojunction solar battery, it is preferred that the thickness of the aluminum oxide film is 1nm～2nm.
In above-mentioned heterojunction solar battery, it is preferred that the thickness of the gallium nitride film is 100 μm～300 μm.
As a total technology design, present invention also offers a kind of preparation side of above-mentioned heterojunction solar battery
Method, comprises the following steps：
（1）Silicon chip surface is polished；
（2）In step（1）In it is polished after silicon chip surface deposited oxide aluminium film；
（3）To step（2）In obtain surface deposition have aluminum oxide film silicon chip annealed；
（4）In step（3）In aluminum oxide film surface cvd nitride gallium thin film after annealing；
（5）In step（4）In prepare one layer of transparent conductive film and silver grating line electrode on the gallium nitride film that obtains.
In above-mentioned preparation method, it is preferred that the step（2）In, using atomic layer deposition method deposited oxide aluminium film；
In the atomic layer deposition method, depositing temperature is 150 DEG C～250 DEG C.
In above-mentioned preparation method, it is preferred that the step（1）In, it is polished using aqueous slkali；The temperature of the polishing
Spend for 70 DEG C～90 DEG C, the time is 1min～4min.
In above-mentioned preparation method, it is preferred that the aqueous slkali is sodium hydroxide solution or potassium hydroxide solution.
In above-mentioned preparation method, it is preferred that the step（3）In, the annealing is carried out under argon gas atmosphere protection；Institute
The temperature for stating annealing is 400 DEG C～500 DEG C, and the time is 20min～40min.
In above-mentioned preparation method, it is preferred that the step（4）In, using mocvd method cvd nitride gallium thin film；It is described
The deposition of gallium nitride film is comprised the following steps：First is that the nitrogen that a layer thickness is 25 nanometers is grown at 500 DEG C～600 DEG C in temperature
Change gallium, then grown in the case where temperature is for 900 DEG C～1200 DEG C.
In above-mentioned preparation method, it is preferred that the step（5）In, the transparent conductive film is steamed using electron beam
Plating method is prepared；The silver grating line electrode is prepared using e-beam evaporation.
Compared with prior art, the advantage of the application is：
1st, the invention provides a kind of heterojunction solar battery, including silicon chip substrate, silicon chip substrate is provided with aluminum oxide film, oxygen
Change aluminium film and be provided with gallium nitride film, form GaN/Al2O3/ Si heterojunction structures, the wherein GaN/Al2O3/ Si hetero-junctions is tied
Structure, is effectively solved the Carrier recombination caused due to the lattice mismatch between gallium nitride and silicon base, is greatly improved
The minority carrier life time of hetero-junction solar cell.In addition, in the present invention aluminum oxide film thickness be only 1-2 nanometers, it is ensured that gallium nitride and
Electric transmission between silicon base, improves GaN/Al2O3The electric current of/Si heterojunction structures.Purport of the present invention to existing silicon substrate too
The structure of positive energy battery is broken through, using new GaN/Al2O3/ Si heterojunction structures, it is excellent to obtain a kind of electric property
Heterojunction solar battery, so as to further lifted silica-based solar cell conversion efficiency and reduce solaode production
Cost.
2nd, present invention also offers a kind of preparation method of heterojunction solar battery, compares conventional silica-based solar electricity
Pond, has the advantages that manufacture method is simple, preparation cost is low, only 5 processing steps.Meanwhile, in the preparation method of the present invention,
Using ALD deposition aluminum oxide film, it is ensured that the uniformity of aluminum oxide film.
Description of the drawings
To make purpose, technical scheme and the advantage of the embodiment of the present invention clearer, below in conjunction with the embodiment of the present invention
In accompanying drawing, clear, complete description is carried out to the technical scheme in the embodiment of the present invention.
Fig. 1 is the schematic diagram of heterojunction solar battery of the present invention.
Specific embodiment
Below in conjunction with Figure of description and concrete preferred embodiment, the invention will be further described, but not therefore and
Limit the scope of the invention.
Raw material and instrument employed in following examples is commercially available.
Embodiment 1
A kind of heterojunction solar battery of the present invention, as shown in figure 1, the heterojunction solar battery includes silicon chip substrate, silicon chip base
Bottom is provided with aluminum oxide film, and aluminum oxide film is provided with gallium nitride film, forms GaN/Al2O3/ Si heterojunction structures.
In the present embodiment, the thickness of aluminum oxide film is 2nm；The thickness of gallium nitride film is 150 μm.
A kind of preparation method of the heterojunction solar battery in embodiments of the present invention, comprises the following steps：
（1）Adopt mass concentration and silicon chip surface is polished for 10% potassium hydroxide solution, wherein 80 DEG C of the temperature for polishing,
The time of polishing is 2 minutes.
（2）Using atomic layer deposition method（ALD）In step（1）In it is polished after silicon chip surface deposit one layer 2 nanometers
Aluminum oxide film, the temperature of deposition is 200 DEG C.
（3）Under the atmosphere protection of argon, by step（2）In obtain surface deposition have aluminum oxide film silicon chip exist
Annealed at a temperature of 425 DEG C, the time of annealing is 30 minutes.
（4）Using MOCVD in step（3）In one layer of gallium nitride film of aluminum oxide film superficial growth after annealing, tool
Body step is：The first gallium nitride that a layer 25 nanometers are grown at a temperature of 550 DEG C, is then given birth at a temperature of 1050 DEG C
It is long, until the thickness of gallium nitride film is 150 microns.
（5）Using e-beam evaporation first in step（4）In deposit in layer transparent on the gallium nitride film that obtains
Conductive film, then prepares the silver grating line electrode of positive and negative again, obtains heterojunction solar battery, as have with e-beam evaporation
There is GaN/Al2O3The heterojunction solar battery of/Si heterojunction structures.
Jing is tested, heterojunction solar battery manufactured in the present embodiment, and open-circuit voltage is up to 480mV.
The above, is only presently preferred embodiments of the present invention, not makees any pro forma restriction to the present invention.Though
So the present invention is disclosed as above with preferred embodiment, but is not limited to the present invention.It is any to be familiar with those skilled in the art
Member, in the case of the spirit and technical scheme without departing from the present invention, all using in the methods and techniques of the disclosure above
Appearance makes many possible variations and modification, or the Equivalent embodiments for being revised as equivalent variations to technical solution of the present invention.Therefore,
Every content without departing from technical solution of the present invention, according to the technical spirit of the present invention to made for any of the above embodiments any simple
Modification, equivalent, equivalence changes and modification, still fall within the range of technical solution of the present invention protection.
Claims (10)
1. a kind of heterojunction solar battery, it is characterised in that the heterojunction solar battery includes silicon chip substrate, the silicon chip base
Bottom is provided with aluminum oxide film, and the aluminum oxide film is provided with gallium nitride film, forms GaN/Al2O3/ Si heterojunction structures.
2. heterojunction solar battery according to claim 1, it is characterised in that the thickness of the aluminum oxide film is 1nm
～2nm.
3. heterojunction solar battery according to claim 1 and 2, it is characterised in that the thickness of the gallium nitride film is
100 μm～300 μm.
4. a kind of preparation method of the heterojunction solar battery as any one of claims 1 to 3, it is characterised in that bag
Include following steps：
（1）Silicon chip surface is polished；
（2）In step（1）In it is polished after silicon chip surface deposited oxide aluminium film；
（3）To step（2）In obtain surface deposition have aluminum oxide film silicon chip annealed；
（4）In step（3）In aluminum oxide film surface cvd nitride gallium thin film after annealing；
（5）In step（4）In prepare one layer of transparent conductive film and silver grating line electrode on the gallium nitride film that obtains.
5. preparation method according to claim 4, it is characterised in that the step（2）In, it is heavy using atomic layer deposition method
Product aluminum oxide film；In the atomic layer deposition method, depositing temperature is 150 DEG C～250 DEG C.
6. the preparation method according to claim 4 or 5, it is characterised in that the step（1）In, carried out using aqueous slkali
Polishing；The temperature of the polishing is 70 DEG C～90 DEG C, and the time is 1min～4min.
7. preparation method according to claim 6, it is characterised in that the aqueous slkali is sodium hydroxide solution or hydroxide
Potassium solution.
8. the preparation method according to claim 4 or 5, it is characterised in that the step（3）In, the annealing is in argon
Carry out under atmosphere protection；The temperature of the annealing is 400 DEG C～500 DEG C, and the time is 20min～40min.
9. the preparation method according to claim 4 or 5, it is characterised in that the step（4）In, deposited using mocvd method
Gallium nitride film；The deposition of the gallium nitride film is comprised the following steps：First one layer is grown in the case where temperature is for 500 DEG C～600 DEG C
Thickness is 25 nanometers of gallium nitride, is then grown in the case where temperature is for 900 DEG C～1200 DEG C.
10. the preparation method according to claim 4 or 5, it is characterised in that the step（5）In, the transparent is led
Conductive film is prepared using e-beam evaporation；The silver grating line electrode is prepared using e-beam evaporation.
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| CN201611065521.0A CN106601854A (en) | 2016-11-28 | 2016-11-28 | Heterojunction solar cell and manufacturing method thereof |
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| Application Number | Priority Date | Filing Date | Title |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6380050B1 (en) * | 1999-07-14 | 2002-04-30 | Arima Optoelectronics Corporation | Method of epitaxially growing a GaN semiconductor layer |
| CN103035496A (en) * | 2012-12-11 | 2013-04-10 | 广州市众拓光电科技有限公司 | GaN film developed on silicon (Si) substrate and preparation method and application thereof |
| US20140264375A1 (en) * | 2013-03-14 | 2014-09-18 | Wisconsin Alumni Research Foundation | Lattice mismatched heterojunction structures and devices made therefrom |
-
2016
- 2016-11-28 CN CN201611065521.0A patent/CN106601854A/en active Pending
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6380050B1 (en) * | 1999-07-14 | 2002-04-30 | Arima Optoelectronics Corporation | Method of epitaxially growing a GaN semiconductor layer |
| CN103035496A (en) * | 2012-12-11 | 2013-04-10 | 广州市众拓光电科技有限公司 | GaN film developed on silicon (Si) substrate and preparation method and application thereof |
| US20140264375A1 (en) * | 2013-03-14 | 2014-09-18 | Wisconsin Alumni Research Foundation | Lattice mismatched heterojunction structures and devices made therefrom |
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