CN106601765B - Black and white cmos image sensor and the manufacture method for improving its sensitivity - Google Patents
Black and white cmos image sensor and the manufacture method for improving its sensitivity Download PDFInfo
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- CN106601765B CN106601765B CN201611169899.5A CN201611169899A CN106601765B CN 106601765 B CN106601765 B CN 106601765B CN 201611169899 A CN201611169899 A CN 201611169899A CN 106601765 B CN106601765 B CN 106601765B
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- well region
- effective district
- silicon oxynitride
- photosensitive
- image sensor
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- 238000000034 method Methods 0.000 title claims abstract description 23
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 19
- 230000035945 sensitivity Effects 0.000 title claims abstract description 18
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims abstract description 83
- 229910052710 silicon Inorganic materials 0.000 claims abstract description 82
- 239000010703 silicon Substances 0.000 claims abstract description 82
- 239000000758 substrate Substances 0.000 claims abstract description 34
- 229920002120 photoresistant polymer Polymers 0.000 claims abstract description 26
- 230000000994 depressogenic effect Effects 0.000 claims abstract description 22
- 238000004518 low pressure chemical vapour deposition Methods 0.000 claims description 8
- 238000005530 etching Methods 0.000 claims description 6
- 238000000137 annealing Methods 0.000 claims description 3
- 238000010992 reflux Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims 1
- 238000010586 diagram Methods 0.000 description 6
- 230000000694 effects Effects 0.000 description 6
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 230000003647 oxidation Effects 0.000 description 2
- 238000007254 oxidation reaction Methods 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000000151 deposition Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000003384 imaging method Methods 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 238000002834 transmittance Methods 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
Abstract
The present invention relates to black and white cmos image sensor and the manufacture method of its sensitivity is improved, black and white cmos image sensor includes silicon substrate, oxide layer, photoresist layer and some silicon oxynitride units.Formed with photosensitive effective district on silicon substrate, oxide layer is located at silicon substrate side, and on formed with depressed area corresponding with photosensitive effective district, to avoid photosensitive effective district.Photoresist layer is covered in oxide layer, on photoresist layer formed with photosensitive effective district position correspondence and downwards concave well region, well region it is corresponding with depressed area connects, avoid photosensitive effective district.Silicon oxynitride unit is provided with depressed area, well region, silicon oxynitride unit is covered in photosensitive effective zone position, to well region outer lug, and the surface of outwardly convex is cambered surface, it can allow after incident light beam strikes to lower focusing, be totally reflected downwards inside silicon oxynitride unit, light all injects to photosensitive effective district in bottom, avoid incident ray from carrying out crosstalk and the loss of incident photon to side pixel, improve quantum efficiency.
Description
Technical field
The present invention relates to digital image processing techniques field, more specifically to a kind of black and white cmos image sensor
And improve the manufacture method of its sensitivity.
Background technology
The structure of normal imaging sensor is that here is photosensitive unit, is color filter array above photosensitive unit, color
It is dimpling lens above color filter array.
Black white image is used under safety-security area application particularly ultra-low illumination application, we can remove the photosensitive battle array of color
Row, retain dimpling lens, to keep maximum light transmittance, but can cause make when light is incident with the distance between photosensitive unit
Cause to harass into the loss of incident photon, and to side pixel.
The content of the invention
The technical problem to be solved in the present invention is, there is provided a kind of improved black and white cmos image sensor and improves its sense
The manufacture method of luminosity.
The technical solution adopted by the present invention to solve the technical problems is：A kind of black and white cmos image sensor is constructed, is wrapped
Include silicon substrate, oxide layer, photoresist layer and some silicon oxynitride units；
Formed with photosensitive effective district on the silicon substrate, the oxide layer is located at silicon substrate side, and it is described on formed with
Depressed area corresponding with the photosensitive effective district, to avoid the photosensitive effective district；
The photoresist layer is covered in the oxide layer, on the photoresist layer formed with photosensitive effective position
Corresponding and downward concave well region is put, well region connection corresponding with the depressed area, avoids the photosensitive effective district；
The silicon oxynitride unit is provided with the depressed area, well region, the silicon oxynitride unit is covered in the sense
In the effective zone position of light, to the well region outer lug, and the surface of outwardly convex is cambered surface.
Preferably, the silicon oxynitride unit is the hemispherical of outwardly convex.
Preferably, the well region is formed for etching.
Preferably, it is distributed with some photosensitive effective districts on the silicon substrate, and the corresponding shape of each photosensitive effective district
Into there is the silicon oxynitride unit.
Preferably, the silicon substrate is P-type silicon substrate.
The present invention also constructs a kind of manufacture method for improving black and white cmos image sensor sensitivity, comprises the following steps：
S1, grow layer of oxide layer on a silicon substrate, formed with photosensitive effective district on the silicon substrate；
S2, coat in the oxide layer photoresist and form photoresist layer, is exposed in the corresponding region of the photosensitive effective district
Light, development, form and the photosensitive effective district position correspondence concave well region downwards on the photoresist layer；
S3, in oxide layer corresponding with the well region be etched to form depressed area, and the bottom of the depressed area is to described
Photosensitive effective district；
S4, in the photoresist layer side carry out LPCVD (Low Pressure Chemical Vapor Deposition
Low-pressure chemical vapour deposition technique) silicon oxynitride growth, formed silicon oxynitride layer；
S5, be located at the regional exposure outside the photosensitive effective district to the silicon oxynitride layer, by being higher by outside the well region
Part etch away,
S6, carry out high annealing reflux, and the silicon oxynitride layer is formed in each depressed area, well region to the trap
The silicon oxynitride unit of area's outer lug, the silicon oxynitride unit is to the well region outer lug, and the surface of outwardly convex is arc
Face.
Preferably, the silicon oxynitride unit is the hemispherical of outwardly convex.
Preferably, the well region is formed for etching.
Preferably, the silicon substrate is P-type silicon substrate.
Implement the black and white cmos image sensor of the present invention and improve the manufacture method of its sensitivity, have below beneficial to effect
Fruit：Black and white cmos image sensor of the present invention and improve silicon oxynitride unit outwardly convex in the manufacture method of its sensitivity
Cambered surface can allow after incident light beam strikes to lower focusing, be totally reflected downwards inside silicon oxynitride unit, in bottom, light is all penetrated
Go out, to photosensitive effective district, to avoid crosstalk that incident ray carries out side pixel and the loss of incident photon, improve quantum
Efficiency, the photosensitive effect for allowing cmos image sensor to be remained under low-light (level).
Brief description of the drawings
Below in conjunction with accompanying drawings and embodiments, the invention will be further described, in attached drawing：
Fig. 1 be the manufacture method of the raising black and white cmos image sensor sensitivity in the embodiment of the present invention step S1,
The section structure diagram after oxide layer and photoresist layer is grown in S2 on a silicon substrate；
Fig. 2 is in the step S2 of the manufacture method of the raising black and white cmos image sensor sensitivity in the embodiment of the present invention
The section structure diagram after well region is formed on photoresist layer；
Fig. 3 is in the step S3 of the manufacture method of the raising black and white cmos image sensor sensitivity in the embodiment of the present invention
Section structure diagram after oxide etch forms depressed area；
Fig. 4 is in the step S4 of the manufacture method of the raising black and white cmos image sensor sensitivity in the embodiment of the present invention
Form the section structure diagram after silicon oxynitride layer；
Fig. 5 is in the step S5 of the manufacture method of the raising black and white cmos image sensor sensitivity in the embodiment of the present invention
Regional exposure outside photosensitive effective district, the section structure after the part being higher by outside well region is etched away are located to silicon oxynitride layer
Schematic diagram；
Fig. 6 is in the step S6 of the manufacture method of the raising black and white cmos image sensor sensitivity in the embodiment of the present invention
Formed to the section structure diagram after the silicon oxynitride unit of well region outer lug.
Embodiment
In order to which the technical features, objects and effects of the present invention are more clearly understood, now compare attached drawing and describe in detail
The embodiment of the present invention.
As shown in fig. 6, the black and white cmos image sensor in a preferred embodiment of the invention includes silicon substrate 1, oxidation
Layer 2, photoresist layer 3 and some silicon oxynitride units 41.
Formed with photosensitive effective district 11 on silicon substrate 1, oxide layer 2 is located at 1 side of silicon substrate, and in oxide layer 2 formed with
Depressed area 21 corresponding with photosensitive effective district 11, to avoid photosensitive effective district 11.
Photoresist layer 3 is covered in oxide layer 2, on photoresist layer 3 formed with photosensitive 11 position correspondence of effective district and to
The well region 31 of lower recess, the connection corresponding with depressed area 21 of well region 31, avoids photosensitive effective district 11.
Silicon oxynitride unit 41 is provided with depressed area 21, well region 31, silicon oxynitride unit 41 is covered in photosensitive effective district
On 11 positions, to 31 outer lug of well region, and the surface of outwardly convex is cambered surface.
The cambered surface of 41 outwardly convex of silicon oxynitride unit can allow after incident light beam strikes to lower focusing, in silicon oxynitride unit
41 inside downwards total reflection, in bottom, light all injects to photosensitive effective district 11, avoid incident ray to side pixel into
Capable crosstalk and the loss of incident photon, improve quantum efficiency, allow what cmos image sensor remained under low-light (level)
Photosensitive effect.
Preferably, silicon oxynitride unit 41 is the hemispherical of outwardly convex, makes the focusing effect of light more preferable.
Further, well region 31 is formed for etching.
Some photosensitive effective districts 11 are distributed with silicon substrate 1, and each photosensitive effective district 11 is corresponding formed with nitrogen oxidation
Silicon unit 41, black and white cmos image sensor can be sensed and receives extraneous next light.
Preferably, silicon substrate 1 is P-type silicon substrate.
In certain embodiments, raising black and white cmos image sensor sensitivity in another embodiment of the present invention
Manufacture method, comprises the following steps：
S1, as shown in Figure 1, formed with photosensitive effective district 11 on silicon substrate 1, where the photosensitive effective district 11 in silicon substrate 1
Layer of oxide layer 2 is grown on side,；
S2, in conjunction with shown in Fig. 1, Fig. 2, coated in oxide layer 2 photoresist formed photoresist layer 3, in photosensitive effective district
11 corresponding regional exposures, development, form and photosensitive 11 position correspondence of effective district concave well region downwards on photoresist layer 3
31；
S3, as shown in figure 3, being etched to form depressed area 21 in oxide layer 2 corresponding with well region 31, the bottom of depressed area 21
Portion is to photosensitive effective district 11；
S4, as shown in figure 4, carrying out LPCVD (Low Pressure Chemical Vapor in 3 side of photoresist layer
Deposition, low-pressure chemical vapour deposition technique) silicon oxynitride growth, formed silicon oxynitride layer 4；
S5, as shown in figure 5, being located at the regional exposure outside photosensitive effective district 11 to silicon oxynitride layer 4, by the height outside well region 31
The part gone out etches away；
S6, as shown in fig. 6, carry out high annealing reflux, silicon oxynitride layer 4 is in each depressed area 21, form in well region 31
To the silicon oxynitride unit 41 of 31 outer lug of well region, silicon oxynitride unit 41 is to 31 outer lug of well region, and the surface of outwardly convex
For cambered surface.
The cambered surface of 41 outwardly convex of silicon oxynitride unit can allow after incident light beam strikes to lower focusing, in silicon oxynitride unit
41 inside downwards total reflection, in bottom, light all injects to photosensitive effective district 11, avoid incident ray to side pixel into
Capable crosstalk and the loss of incident photon, improve quantum efficiency, allow what cmos image sensor remained under low-light (level)
Photosensitive effect.
Preferably, silicon oxynitride unit 41 is the hemispherical of outwardly convex.
Preferably, well region 31 is formed for etching.
Preferably, silicon substrate 1 is P-type silicon substrate.
It is to be appreciated that above-mentioned each technical characteristic can be used in any combination and unrestricted.
The foregoing is merely the embodiment of the present invention, is not intended to limit the scope of the invention, every to utilize this hair
The equivalent structure or equivalent flow shift that bright specification and accompanying drawing content are made, is directly or indirectly used in other relevant skills
Art field, is included within the scope of the present invention.
Claims (9)
- A kind of 1. black and white cmos image sensor, it is characterised in that including silicon substrate (1), oxide layer (2), photoresist layer (3), And some silicon oxynitride units (41)；It is located at silicon substrate (1) side formed with photosensitive effective district (11), the oxide layer (2) on the silicon substrate (1), and it is described Formed with depressed area (21) corresponding with the photosensitive effective district (11) in oxide layer (2), to avoid the photosensitive effective district (11)；The photoresist layer (3) is covered in the oxide layer (2), formed with photosensitive having with described on the photoresist layer (3) Area's (11) position correspondence and downwards concave well region (31) are imitated, well region (31) connection corresponding with the depressed area (21), keeps away Allow the photosensitive effective district (11)；The silicon oxynitride unit (41), the silicon oxynitride unit (41) are provided with the depressed area (21), well region (31) It is covered on photosensitive effective district (11) position, to the well region (31) outer lug, and the surface of outwardly convex is cambered surface.
- 2. black and white cmos image sensor according to claim 1, it is characterised in that the silicon oxynitride unit (41) is Outwardly convex it is hemispherical.
- 3. black and white cmos image sensor according to claim 1, it is characterised in that the well region (31) is etching shape Into.
- 4. black and white cmos image sensor according to any one of claims 1 to 3, it is characterised in that the silicon substrate (1) On some photosensitive effective districts (11) are distributed with, and each photosensitive effective district (11) is corresponding formed with the silicon oxynitride list First (41).
- 5. black and white cmos image sensor according to any one of claims 1 to 3, it is characterised in that the silicon substrate (1) For P-type silicon substrate.
- 6. a kind of manufacture method for improving black and white cmos image sensor sensitivity, it is characterised in that comprise the following steps：Formed with photosensitive effective district (11) on S1, silicon substrate (1), in photosensitive effective district (11) institute of the silicon substrate (1) Layer of oxide layer (2) is grown on side；S2, coat photoresist formation photoresist layer (3) in the oxide layer (2), corresponding in the photosensitive effective district (11) Regional exposure, development, form and photosensitive effective district (11) position correspondence concave trap downwards on the photoresist layer (3) Area (31)；S3, in oxide layer (2) corresponding with the well region (31) be etched to form depressed area (21), the depressed area (21) Bottom is to the photosensitive effective district (11)；S4, in the photoresist layer (3) side carry out LPCVD (Low Pressure Chemical Vapor Deposition Low-pressure chemical vapour deposition technique) silicon oxynitride growth, formed silicon oxynitride layer (4)；S5, be located at the regional exposure of the photosensitive effective district (11) outside to the silicon oxynitride layer (4), by the well region (31) outside The part being higher by etch away；S6, carry out high annealing reflux, and the silicon oxynitride layer (4) is formed in each depressed area (21) and well region (31) To the silicon oxynitride unit (41) of the well region (31) outer lug, the silicon oxynitride unit (41) is to the well region (31) evagination Rise, and the surface of outwardly convex is cambered surface.
- 7. the manufacture method according to claim 6 for improving black and white cmos image sensor sensitivity, it is characterised in that institute Silicon oxynitride unit (41) is stated as the hemispherical of outwardly convex.
- 8. the manufacture method according to claim 6 for improving black and white cmos image sensor sensitivity, it is characterised in that institute Well region (31) is stated to be formed for etching.
- 9. the manufacture method according to claim 6 for improving black and white cmos image sensor sensitivity, it is characterised in that institute It is P-type silicon substrate to state silicon substrate (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611169899.5A CN106601765B (en) | 2016-12-16 | 2016-12-16 | Black and white cmos image sensor and the manufacture method for improving its sensitivity |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201611169899.5A CN106601765B (en) | 2016-12-16 | 2016-12-16 | Black and white cmos image sensor and the manufacture method for improving its sensitivity |
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| Publication Number | Publication Date |
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| CN106601765A CN106601765A (en) | 2017-04-26 |
| CN106601765B true CN106601765B (en) | 2018-05-08 |
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| CN201611169899.5A Expired - Fee Related CN106601765B (en) | 2016-12-16 | 2016-12-16 | Black and white cmos image sensor and the manufacture method for improving its sensitivity |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110265418A (en) * | 2019-06-13 | 2019-09-20 | 德淮半导体有限公司 | Semiconductor devices and forming method thereof |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5593913A (en) * | 1993-09-28 | 1997-01-14 | Sharp Kabushiki Kaisha | Method of manufacturing solid state imaging device having high sensitivity and exhibiting high degree of light utilization |
| CN1819243A (en) * | 2004-12-30 | 2006-08-16 | 东部亚南半导体株式会社 | Image sensor having inner lens |
| CN102231384A (en) * | 2011-06-22 | 2011-11-02 | 格科微电子（上海）有限公司 | Image sensor and manufacturing method thereof |
| CN103066090A (en) * | 2012-12-26 | 2013-04-24 | 上海集成电路研发中心有限公司 | Pixel structure with convex lens structure and manufacturing method |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100477784B1 (en) * | 2000-08-31 | 2005-03-22 | 매그나칩 반도체 유한회사 | Image sensor having lens formed by air in trench and method for fabricating the same |
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2016
- 2016-12-16 CN CN201611169899.5A patent/CN106601765B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5593913A (en) * | 1993-09-28 | 1997-01-14 | Sharp Kabushiki Kaisha | Method of manufacturing solid state imaging device having high sensitivity and exhibiting high degree of light utilization |
| CN1819243A (en) * | 2004-12-30 | 2006-08-16 | 东部亚南半导体株式会社 | Image sensor having inner lens |
| CN102231384A (en) * | 2011-06-22 | 2011-11-02 | 格科微电子（上海）有限公司 | Image sensor and manufacturing method thereof |
| CN103066090A (en) * | 2012-12-26 | 2013-04-24 | 上海集成电路研发中心有限公司 | Pixel structure with convex lens structure and manufacturing method |
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