CN102231384A - Image sensor and manufacturing method thereof - Google Patents
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Abstract
The invention relates to an image sensor and a manufacturing method thereof, wherein the image sensor comprises a semiconductor substrate, a euphotic layer, a lightproof layer, metal layers and a conductive plug. A pixel array is arranged in the semiconductor substrate, a pixel comprises a light sensitive unit, and adjacent pixels are separated by a low trench insulating structure; the euphotic layer is arranged on the surface of the semiconductor substrate and is aligned to the light sensitive unit; the lightproof layer is arranged on the surface of the semiconductor substrate and surrounds the euphotic layer; the metal layers are arranged in the lightproof layer; and the conductive plug is used for connecting adjacent metal layers. The image sensor can effectively prevent incident light from entering other light sensitive units so as to avoid the generation of optical crosstalk, and the image display quality of pixels of the image sensor is improved.
Description
Technical field
The present invention relates to the cmos image process field, particularly relate to a kind of imageing sensor and forming method thereof.
Background technology
At present, imageing sensor has been widely used in camera, medicine equipment, portable phone, automobile and other occasions.The manufacturing process of imageing sensor, particularly CMOS (complementary metal Si semiconductor) imageing sensor (CIS) has obtained very much progress, and constantly impels imageing sensor to develop to the direction of high integration and miniaturization.Each pixel of imageing sensor generally comprises a photo-sensitive cell for example photodiode and one or more being used for from the transistor of photo-sensitive cell read output signal.Cmos image sensor adopts plain conductor that each photosensitive unit is connected with other photosensitive units and output; These plain conductors generally are distributed in the different layers, so that be connected with transistorized different piece and form effective path.
Application number is to disclose a kind of imageing sensor as shown in Figure 1 in 200710148796.5 the Chinese patent application, consult Fig. 1, the imageing sensor of prior art comprises: a plurality of photosensitive units 101 that are positioned at the substrate surface (not shown), a plurality of photosensitive units form the photosensitive unit array, the metal level 103 that is positioned at the dielectric layer 102 on photosensitive unit 101 surfaces and is positioned at dielectric layer, be positioned at first flatness layer 104 on dielectric layer 102 surfaces, be positioned at the colored filter 105 on first flatness layer, 104 surfaces, be positioned at second flatness layer 106 on colored filter 105 surfaces, and the lenticule 107 that is positioned at second flatness layer, 106 surfaces.
The conventional images transducer comprises photodetector for backside-illuminated imageing sensor (BSI image sensor) and front irradiation imageing sensor (FSI image sensor).All there are a major issue usually in photodetector for backside-illuminated and front irradiation imageing sensor: optical crosstalk.
As shown in Figure 2, in imageing sensor, when incident ray 290 shone photosensitive unit 101 with certain inclination angle, a part of light entered photosensitive unit 101 by transparent interlayer dielectric layer (not shown), and a part of irradiate light is to metal level 1032,1033; Owing to do not need conductive plunger to connect between the part metals layer 1031,1032,1033, but be full of transparent interlayer dielectric layer, the light that makes this part shine metal level 1032,1033 reflects, and finally enter in other photosensitive units 101 (generally being adjacent photosensitive unit), form optical crosstalk.This optical crosstalk has caused the pseudomorphism composition in the image, and can't be corrected in image processing, has had a strong impact on picture quality.
Summary of the invention
The problem that the present invention solves provides a kind of imageing sensor and forming method thereof, solves the conventional images transducer, because of incident ray enters adjacent photosensitive unit through metal layer reflection, forms the problem of optical crosstalk.
For addressing the above problem, the present invention adopts following technical scheme:
A kind of imageing sensor comprises: Semiconductor substrate, be formed with pel array in the described Semiconductor substrate, and described pixel packets contains photosensitive unit, separates with insulation structure of shallow groove between the neighbor; Be positioned at the photic zone of semiconductor substrate surface, described photic zone is aimed at photosensitive unit; Be positioned at the light non-transmittable layers of semiconductor substrate surface, described light non-transmittable layers is surrounded described photic zone; Be positioned at the metal level of light non-transmittable layers and the conductive plunger of connection adjacent metal.
Optionally, described light non-transmittable layers material is an insulating material.
Optionally, described insulating material is the silica nitrogen compound.
Optionally, polysilicon, aluminium, copper or the tungsten of the material of described metal level and conductive plunger for mixing.
Optionally, also comprise: cover the passivation layer of topmost metal layer, be positioned at a plurality of and photosensitive unit lenticule one to one on the described passivation layer.
A kind of formation method of imageing sensor may further comprise the steps: Semiconductor substrate is provided, is formed with pel array in the described Semiconductor substrate, described pixel packets contains photosensitive unit, separates with insulation structure of shallow groove between the neighbor; On described Semiconductor substrate, form etching stop layer; Form first light non-transmittable layers on described etching stop layer, described light non-transmittable layers covers described photosensitive unit and insulation structure of shallow groove; In first light non-transmittable layers, form first through hole; In described first through hole, fill full conductive materials, form first conductive plunger; On first light non-transmittable layers or the discrete the first metal layer of interior formation, described the first metal layer is communicated with first conductive plunger; On first light non-transmittable layers, form second light non-transmittable layers that covers the first metal layer; In second light non-transmittable layers, form second conductive plunger; On second light non-transmittable layers or the second discrete metal level of interior formation, described second metal level is communicated with second conductive plunger; Continue to form light non-transmittable layers, the metal level of predetermined quantity and run through the conductive plunger that light non-transmittable layers thickness is communicated with metal level; In the end form the passivation layer that covers last one deck metal level on one deck light non-transmittable layers; Etching passivation layer and light non-transmittable layers form the groove of perpendicular alignmnet photosensitive unit to exposing etching stop layer; In groove, fill full light transmissive material, form photic zone.
Optionally, described light non-transmittable layers material is an insulating material.
Optionally, described etching stopping layer material is a light transmissive material.
Optionally, described insulating material is the silica nitrogen compound.
Compared with prior art, the present invention has the following advantages:
The imageing sensor that the embodiment of the invention provides includes the photic zone that is positioned at semiconductor substrate surface, and described photic zone is aimed at photosensitive unit; Be positioned at the light non-transmittable layers of semiconductor substrate surface, described light non-transmittable layers is surrounded described photic zone; Be positioned at the metal level of light non-transmittable layers and the conductive plunger of connection adjacent metal; When incident ray irradiation image sensor pixel, incident ray only can enter corresponding photosensitive unit by photic zone, and the light non-transmittable layers that can't pass around the photic zone enters other photosensitive units, has avoided other photosensitive units are constituted optical crosstalk.
Further, the formation method of the imageing sensor that the embodiment of the invention provides, by on the position of aiming at photosensitive unit, hyaline layer being set, light non-transmittable layers is set around hyaline layer, make incident ray only can enter into the corresponding photosensitive unit by photic zone, and can't enter other photosensitive units, avoided other photosensitive units are formed optical crosstalk.
Description of drawings
Fig. 1 is a conventional images sensor construction schematic diagram;
Fig. 2 is the schematic diagram that the conventional images transducer forms optical crosstalk;
Fig. 3 is an imageing sensor specific embodiment schematic diagram of the present invention;
Fig. 4 is that imageing sensor of the present invention prevents the optical crosstalk schematic diagram;
Fig. 5 is an imageing sensor formation method specific embodiment schematic flow sheet of the present invention;
Fig. 6 to Figure 15 is an imageing sensor formation method specific embodiment schematic diagram of the present invention.
Embodiment
The present inventor finds existing imageing sensor, and when incident ray during with the incident of certain inclination angle, a part arrives photosensitive unit by transparent interlayer dielectric layer, and another part then can be radiated on the metal level and reflect.Because the position between the metal level that does not connect by conductive plunger, be full of transparent interlayer dielectric layer, make the incident ray that is radiated at this position repeatedly reflect through metal level, finally enter other photosensitive units (generally being adjacent photosensitive unit), form optical crosstalk, had a strong impact on the image displaying quality of imageing sensor.
At the problems referred to above, the inventor proposes a kind of imageing sensor through researching and analysing, and comprising: Semiconductor substrate, be formed with pel array in the described Semiconductor substrate, and described pixel packets contains photosensitive unit, separates with insulation structure of shallow groove between the neighbor; Be positioned at the photic zone of semiconductor substrate surface, described photic zone is aimed at photosensitive unit; Be positioned at the light non-transmittable layers of semiconductor substrate surface, described light non-transmittable layers is surrounded described photic zone; Be positioned at the metal level of light non-transmittable layers and the conductive plunger of connection adjacent metal.
Imageing sensor provided by the invention, since photic zone only be arranged on photosensitive unit above, around the photic zone then is light non-transmittable layers, therefore when incident ray is injected image sensor pixel, incident ray only can enter the corresponding photosensitive unit along photic zone, enter adjacent photosensitive unit and can't pass the light non-transmittable layers that is positioned at around the photic zone, avoided adjacent photosensitive unit is constituted optical crosstalk, improved the image displaying quality of image sensor pixel.
Below in conjunction with drawings and Examples imageing sensor provided by the present invention is further described.
Fig. 3 is an imageing sensor specific embodiment structural representation of the present invention.As shown in Figure 3, imageing sensor of the present invention comprises:
In the present embodiment, described Semiconductor substrate 200 can be silicon-on-insulator substrate (SOI substrate), quartz substrate, ceramic substrate, glass substrate, and also is useful on other device (not shown) of imageing sensor on the substrate.Described pixel comprises photosensitive unit 202, and described photosensitive unit 202 comprises a plurality of light-sensitive elements, for example light sensitive diode, color light transducer.Separate by insulation structure of shallow groove 201 between the described neighbor.
Described photic zone 250 be positioned at photosensitive unit 202 directly over, photic zone 250 materials are transparent material, as silica, enter photosensitive unit 202 after making light incide photic zone from the outside.
Described light non-transmittable layers 210 is positioned at around the described photic zone 250, is formed by light tight insulating material, and as the silica nitrogen compound, light can't pass light non-transmittable layers 210, so light can not produce optical crosstalk between neighbor; Described light non-transmittable layers 210 is a sandwich construction.
Described metal level 220 is positioned at described light non-transmittable layers 210; Described metal level 220 can be a sandwich construction, and in an example of the present invention, described metal level 220 is a 3-tier architecture; Described metal level 220 can be electrically connected to exterior light detection part (not shown), and every layer of metal level 220 has certain layout, can not keep off above photosensitive unit 202.Need the place that is electrically connected between the described different layers metal level 220, by 230 corresponding connections of conductive plunger; The material of described metal level 220 and conductive plunger 230 can be any conducting metal, as polysilicon, aluminium, copper or the tungsten that mixes; In an example of the present invention, selected material is a metallic aluminium.
In the present embodiment, described imageing sensor also comprises the passivation layer 240 that covers topmost metal layer 220, be positioned at the colored filter 260 on described passivation layer 240 and the photic zone 250, be positioned at the flatness layer 270 on the described colored filter 260, be positioned at a plurality of and photosensitive unit 202 lenticule 280 one to one on the described flatness layer 270.
The material of described passivation layer 240 is consistent with the material of photic zone 250.
The colored filter that described colored filter 260 can select for use prior art to provide.In an example of present embodiment, the material that is used to form colored filter 260 is the photo-induced etching agent of dyeing.With each photosensitive unit 202 over against the position form a filter, each filter is the light by different colors respectively, for example red, green and blue.
The material of described flatness layer 270 is an organic material.
Described lenticule 280 is the plane towards the surface of described flatness layer, and the surface of described flatness layer is a convex surface dorsad, each lenticule and corresponding photosensitive unit 202 centrally aligneds.The material that is used to form lenticule 280 can be an oxide, also can be organic substance.The refractive index that is used to form lenticular material is between 1.4～1.6.Preferably, the organic film with low-refraction is arranged, make hyporeflexia, thereby improve the transmitance of light on lenticule 280 surfaces.The refractive index of described low-index material is between 1.1～1.4.
In the present embodiment, according to the actual design needs, can increase one deck flatness layer between passivation layer 240 and colored filter 260, perhaps total is all without flatness layer, but this change does not influence essence of the present invention.
In the present embodiment, if image sensor pixel only is used for the black color field, then colored filter 260 can be provided with.
Fig. 4 prevents the optical crosstalk schematic diagram for imageing sensor specific embodiment of the present invention.As shown in Figure 4, when incident ray 290 shone image sensor pixel with certain angle of inclination, incident ray 290 only can pass photic zone 250 and enter photosensitive unit 202.This is because 250 tops that are arranged on photosensitive unit 202 of photic zone, around the photic zone 250 then is light non-transmittable layers 210, therefore when incident ray 290 is injected into photic zone 250 sidewalls, the stopping of light non-transmittable layers 210 around the photic zone 250 can be subjected to being positioned at and adjacent photosensitive unit 202 can't be entered, avoided adjacent photosensitive unit is constituted optical crosstalk, improved the image displaying quality of image sensor pixel, thereby avoided optical crosstalk, improved the image displaying quality of imageing sensor.
In addition, the present invention also provides a kind of formation method of imageing sensor.Fig. 5 is the specific embodiment flow chart of imageing sensor formation method of the present invention, is specially: as shown in Figure 5,
Execution in step S11 provides Semiconductor substrate, is formed with pel array in the described Semiconductor substrate, and described pixel packets contains photosensitive unit, separates with insulation structure of shallow groove between the neighbor;
Execution in step S12 forms etching stop layer on described Semiconductor substrate;
Execution in step S13 forms first light non-transmittable layers on described etching stop layer, described light non-transmittable layers covers described photosensitive unit and insulation structure of shallow groove;
Execution in step S14 forms first through hole in first light non-transmittable layers;
Execution in step S15 fills full conductive materials in described first through hole, form first conductive plunger; Execution in step S16, on first light non-transmittable layers or the discrete the first metal layer of interior formation, described the first metal layer is communicated with first conductive plunger;
Execution in step S17 forms second light non-transmittable layers that covers the first metal layer on first light non-transmittable layers;
Execution in step S18 forms second conductive plunger in second light non-transmittable layers;
Execution in step S19, on second light non-transmittable layers or the second discrete metal level of interior formation, described second metal level is communicated with second conductive plunger;
Execution in step S20 continues to form light non-transmittable layers, the metal level of predetermined quantity and run through the conductive plunger that light non-transmittable layers thickness is communicated with metal level;
Execution in step S21 in the end forms the passivation layer that covers last one deck metal level on one deck light non-transmittable layers;
Execution in step S22, etching passivation layer and light non-transmittable layers form the groove of perpendicular alignmnet photosensitive unit to exposing etching stop layer;
Execution in step S23 fills full light transmissive material in groove, form photic zone.
The formation method of the imageing sensor that the embodiment of the invention provides, by above the aligning photosensitive unit, hyaline layer being set, light non-transmittable layers is set around hyaline layer, make incident ray only can enter into the corresponding photosensitive unit by photic zone, and can't enter other photosensitive units, avoided other photosensitive units are formed optical crosstalk, effectively improved the image displaying quality of graphical sensory device pixel.
Fig. 6 to Figure 15 is the specific embodiment schematic diagram of imageing sensor formation method of the present invention.As shown in Figure 6, provide Semiconductor substrate 300; Be formed with pixel in described Semiconductor substrate 300, described pixel packets contains photosensitive unit 302; Separate by insulation structure of shallow groove 301 between neighbor.
In the present embodiment, the material of Semiconductor substrate 300 is any material that can support that photosensitive unit 302 forms, for example can be silicon-on-insulator substrate (SOI substrate), quartz substrate, ceramic substrate, glass substrate, and also be formed with other device (not shown) that are used for imageing sensor on the substrate.
Described photosensitive unit 302 comprises a plurality of light-sensitive elements, for example color light transducer, light sensitive diode.
As shown in Figure 7, on described Semiconductor substrate 300, form etching stop layer 310.
In the present embodiment, described etching stop layer 310 materials are transparent insulation material, such as silica, and protection Semiconductor substrate 300 when being used for etching.
As shown in Figure 8, on described etching stop layer 310, form first light non-transmittable layers 320.
In the present embodiment, described first light non-transmittable layers, 320 materials are light tight insulating material, as the nitrogen Si oxide.
As shown in Figure 9, in described first light non-transmittable layers 320, form first conductive plunger 340.Concrete formation technology is as follows: form the first photoresist layer (not shown) on described first light non-transmittable layers 320, and define via hole image; With first photoresist layer is mask, to exposing Semiconductor substrate 300, forms first through hole along via hole image etching first light non-transmittable layers 320 and etching stop layer 310; In described through hole, fill full conductive materials, and with the smooth conductive materials of chemical mechanical milling method to exposing first light non-transmittable layers 320, formation conductive plunger 340.
In the present embodiment, the common conductive materials of the material selection of conductive plunger 340 is as polysilicon, aluminium, copper or the tungsten that mixes.
As shown in figure 10, form discrete the first metal layer 350 on first light non-transmittable layers 320, described metal level 350 is communicated with first conductive plunger 340.The technology of concrete formation the first metal layer 350 is as follows: form metal level with vacuum vapour deposition on first light non-transmittable layers 320; On metal level, form the second photoresist layer (not shown), and define first metal wiring pattern; With second photoresist layer is mask, with the dry etching method along the first metal wiring pattern etching sheet metal to exposing first light non-transmittable layers 320, form the first metal layer 350; Remove second photoresist layer.
As shown in figure 11, continue to form second metal level 352, the 3rd metal level 354, the second light non-transmittable layers 322, the 3rd light non-transmittable layers 324, the second conductive plungers 342, the 3rd conductive plunger 344.The technology of concrete each rete of formation forms as described in first light non-transmittable layers 320, first conductive plunger 340, the first metal layer 350 as the front.
In the present embodiment, only enumerate being formed up to three-layer metal layer 354,, then form respective metal layers, light non-transmittable layers and conductive plunger as stated above and get final product if the expection number of metal is many.
As shown in figure 12, on described the 3rd light non-transmittable layers 324, form the passivation layer 360 that covers the 3rd metal level 354 with chemical vapour deposition technique, and the described passivation layer 360 of planarization.
In the present embodiment, the material of described passivation layer 360 can be organic material or inorganic material, and such as transparent silica, silicon nitride, its main protection component is avoided the influence of moisture and scratch
As shown in figure 13, described passivation layer 360 of etching and light non-transmittable layers form the groove of aiming at photosensitive unit 302 to exposing etching stop layer 310.Concrete formation technology is as follows: form the 3rd photoresist layer (not shown) on passivation layer 360, and define the groove figure of aiming at photosensitive unit 302; With described the 3rd photoresist layer is mask, and along groove figure, the described passivation layer 360 of etching and the 3rd light non-transmittable layers 324, second light non-transmittable layers 322 and first light non-transmittable layers 320 form groove to exposing etching stop layer 310.
As shown in figure 14, to the full light transmissive material of described trench fill, form photic zone 370.
In the present embodiment, described light transmissive material is a silica printing opacity insulating material.
In the present embodiment, can after forming last one deck metal level 354, form the light non-transmittable layers that one deck covers last one deck metal level 354 again, and then form passivation layer 360.Present embodiment can also form before the passivation layer 360 after forming last one deck metal level 354, forms groove earlier and fill full light transmissive material to form photic zone 370, and described photic zone 370 covers last one deck metal level 354; And then on photic zone 370, form passivation layer 360.
As shown in figure 15, form colored filters 380, form flatness layers 385, and form a plurality of and photosensitive unit lenticule 390 one to one on described flatness layer 385 surfaces on described colored filter 380 surfaces on photic zone 370 surface.
In the present embodiment, the colored filter that described colored filter 380 can select for use prior art to provide; With each photosensitive unit 302 over against the position form a filter, each filter is the light by different colors respectively, for example red, green and blue.
In the present embodiment, described lenticule 390 is the plane towards the surface of described flatness layer, and the surface of described flatness layer is a convex surface dorsad, each lenticule 390 and corresponding photosensitive unit centrally aligned.The material that is used to form lenticule 390 can be an oxide, also can be organic substance.The refractive index of material that is used to form lenticule 390 is between 1.4～1.6.Preferably, the organic film with low-refraction is arranged, make hyporeflexia, thereby improve the transmitance of light on lenticule 390 surfaces.The refractive index of described low-index material is between 1.1～1.4.
In the present embodiment,, also flatness layer 385 can be set according to actual conditions.If image sensor pixel is the black and white image sensor pixel, does not then need to be provided with and make colored filter 380.
The formation method of the imageing sensor that the embodiment of the invention provides, by above the aligning photosensitive unit, hyaline layer being set, light non-transmittable layers is set around hyaline layer, make incident ray only can enter into the corresponding photosensitive unit by photic zone, and can't enter other photosensitive units, avoided other photosensitive units are formed optical crosstalk, effectively improved the image displaying quality of graphical sensory device pixel.
Though the present invention with preferred embodiment openly as above; but it is not to be used for limiting the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (9)
1. an imageing sensor is characterized in that, comprising:
Semiconductor substrate is formed with pel array in the described Semiconductor substrate, and described pixel packets contains photosensitive unit, separates with insulation structure of shallow groove between the neighbor;
Be positioned at the photic zone of semiconductor substrate surface, described photic zone is aimed at photosensitive unit;
Be positioned at the light non-transmittable layers of semiconductor substrate surface, described light non-transmittable layers is surrounded described photic zone;
Be positioned at the metal level of light non-transmittable layers and the conductive plunger of connection adjacent metal.
2. imageing sensor according to claim 1 is characterized in that, described light non-transmittable layers material is an insulating material.
3. imageing sensor according to claim 2 is characterized in that, described insulating material is the silica nitrogen compound.
4. imageing sensor according to claim 1 is characterized in that, polysilicon, aluminium, copper or the tungsten of the material of described metal level and conductive plunger for mixing.
5. imageing sensor according to claim 1 is characterized in that, also comprises: cover the passivation layer of topmost metal layer, be positioned at a plurality of and photosensitive unit lenticule one to one on the described passivation layer.
6. the formation method of an imageing sensor is characterized in that, may further comprise the steps:
Semiconductor substrate is provided, is formed with pel array in the described Semiconductor substrate, described pixel packets contains photosensitive unit, separates with insulation structure of shallow groove between the neighbor;
On described Semiconductor substrate, form etching stop layer;
Form first light non-transmittable layers on described etching stop layer, described light non-transmittable layers covers described photosensitive unit and insulation structure of shallow groove;
In first light non-transmittable layers, form first through hole;
In described first through hole, fill full conductive materials, form first conductive plunger;
On first light non-transmittable layers or the discrete the first metal layer of interior formation, described the first metal layer is communicated with first conductive plunger;
On first light non-transmittable layers, form second light non-transmittable layers that covers the first metal layer;
In second light non-transmittable layers, form second conductive plunger;
On second light non-transmittable layers or the second discrete metal level of interior formation, described second metal level is communicated with second conductive plunger;
Continue to form light non-transmittable layers, the metal level of predetermined quantity and run through the conductive plunger that light non-transmittable layers thickness is communicated with metal level;
In the end form the passivation layer that covers last one deck metal level on one deck light non-transmittable layers;
Etching passivation layer and light non-transmittable layers form the groove of perpendicular alignmnet photosensitive unit to exposing etching stop layer;
In groove, fill full light transmissive material, form photic zone.
7. formation method according to claim 6 is characterized in that, described light non-transmittable layers material is an insulating material.
8. formation method according to claim 6 is characterized in that, described etching stopping layer material is a light transmissive material.
9. formation method according to claim 7 is characterized in that, described insulating material is the silica nitrogen compound.
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| CN103367376A (en) * | 2012-03-28 | 2013-10-23 | 全视科技有限公司 | Method and device with enhanced ion doping |
| CN103367376B (en) * | 2012-03-28 | 2016-07-20 | 全视科技有限公司 | There is the method and device that strengthen ion doping |
| CN102779826A (en) * | 2012-08-15 | 2012-11-14 | 豪威科技(上海)有限公司 | Backside illuminated CMOS (Complementary Metal Oxide Semiconductor) image sensor |
| CN103151364A (en) * | 2013-03-15 | 2013-06-12 | 格科微电子（上海）有限公司 | CMOS (Complementary Metal-Oxide-Semiconductor) image sensor and forming method thereof |
| CN103268881A (en) * | 2013-05-28 | 2013-08-28 | 北京思比科微电子技术股份有限公司 | Image sensor with high dynamic range |
| CN103268881B (en) * | 2013-05-28 | 2016-06-29 | 北京思比科微电子技术股份有限公司 | A kind of imageing sensor of HDR |
| CN103325804A (en) * | 2013-06-28 | 2013-09-25 | 上海宏力半导体制造有限公司 | Cmos image sensor structure |
| CN106298820B (en) * | 2015-05-28 | 2019-10-11 | 力晶积成电子制造股份有限公司 | Image sensor and manufacturing method thereof |
| CN106298820A (en) * | 2015-05-28 | 2017-01-04 | 力晶科技股份有限公司 | Image sensor and manufacturing method thereof |
| CN107808887A (en) * | 2016-09-06 | 2018-03-16 | 日月光半导体制造股份有限公司 | Optical devices and its manufacture method |
| CN106601765A (en) * | 2016-12-16 | 2017-04-26 | 深圳市华海技术有限公司 | Black-white CMOS image sensor and manufacturing method for increasing the brightness thereof |
| CN106601765B (en) * | 2016-12-16 | 2018-05-08 | 深圳市华海技术有限公司 | Black and white cmos image sensor and the manufacture method for improving its sensitivity |
| CN111199167A (en) * | 2018-11-16 | 2020-05-26 | 世界先进积体电路股份有限公司 | Optical sensing structure and forming method thereof |
| CN111199167B (en) * | 2018-11-16 | 2023-06-20 | 世界先进积体电路股份有限公司 | Optical sensing structure and forming method thereof |
| CN111769127A (en) * | 2020-07-02 | 2020-10-13 | 芯盟科技有限公司 | Image sensor, camera device based on time-of-flight technology and preparation method |
| WO2022261977A1 (en) * | 2021-06-18 | 2022-12-22 | 苏州晶湛半导体有限公司 | Front-illuminated image sensor |
| CN115236001A (en) * | 2022-07-26 | 2022-10-25 | 豪威半导体（上海）有限责任公司 | Image sensor and manufacturing method thereof |
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