CN102231384B - Image sensor and manufacturing method thereof - Google Patents
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- CN102231384B CN102231384B CN 201110170554 CN201110170554A CN102231384B CN 102231384 B CN102231384 B CN 102231384B CN 201110170554 CN201110170554 CN 201110170554 CN 201110170554 A CN201110170554 A CN 201110170554A CN 102231384 B CN102231384 B CN 102231384B
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Abstract
The invention relates to an image sensor and a manufacturing method thereof, wherein the image sensor comprises a semiconductor substrate, a euphotic layer, a lightproof layer, metal layers and a conductive plug. A pixel array is arranged in the semiconductor substrate, a pixel comprises a light sensitive unit, and adjacent pixels are separated by a low trench insulating structure; the euphotic layer is arranged on the surface of the semiconductor substrate and is aligned to the light sensitive unit; the lightproof layer is arranged on the surface of the semiconductor substrate and surrounds the euphotic layer; the metal layers are arranged in the lightproof layer; and the conductive plug is used for connecting adjacent metal layers. The image sensor can effectively prevent incident light from entering other light sensitive units so as to avoid the generation of optical crosstalk, and the image display quality of pixels of the image sensor is improved.
Description
Technical field
The present invention relates to the cmos image process field, particularly relate to a kind of imageing sensor and forming method thereof.
Background technology
At present, imageing sensor has been widely used in camera, medicine equipment, portable phone, automobile and other occasions.The manufacturing process of imageing sensor, particularly CMOS (complementary metal SiClx semiconductor) imageing sensor (CIS) has obtained very much progress, and has constantly impelled imageing sensor to the future development of high integration and miniaturization.Each pixel of imageing sensor generally comprises for example photodiode and one or more for the transistor from the photo-sensitive cell read output signal of a photo-sensitive cell.Cmos image sensor adopts plain conductor that each photosensitive unit is connected with other photosensitive units and output; These plain conductors generally are distributed in the different layers, in order to be connected with transistorized different piece and form effective path.
Application number is to disclose a kind of as shown in Figure 1 imageing sensor in 200710148796.5 the Chinese patent application, consult Fig. 1, the imageing sensor of prior art comprises: a plurality of photosensitive units 101 that are positioned at the substrate surface (not shown), a plurality of photosensitive units form the photosensitive unit array, the metal level 103 that is positioned at the dielectric layer 102 on photosensitive unit 101 surfaces and is positioned at dielectric layer, be positioned at first flatness layer 104 on dielectric layer 102 surfaces, be positioned at the colored filter 105 on the first flatness layer 104 surfaces, be positioned at second flatness layer 106 on colored filter 105 surfaces, and the lenticule 107 that is positioned at the second flatness layer 106 surfaces.
The conventional images transducer comprises photodetector for backside-illuminated imageing sensor (BSI image sensor) and front irradiation imageing sensor (FSI image sensor).All there are a major issue usually in photodetector for backside-illuminated and front irradiation imageing sensor: optical crosstalk.
As shown in Figure 2, in imageing sensor, when incident ray 290 shone photosensitive unit 101 with certain inclination angle, a part of light entered photosensitive unit 101 by transparent interlayer dielectric layer (not shown), and a part of light shines on the metal level 1032,1033; Owing to do not need conductive plunger to connect between the part metals layer 1031,1032,1033, but be full of transparent interlayer dielectric layer, so that this part shine metal level 1032,1033 light reflects, and finally enter in other photosensitive units 101 (generally being adjacent photosensitive unit), form optical crosstalk.This optical crosstalk has caused the pseudomorphism composition in the image, and can't be corrected in image is processed, and has had a strong impact on picture quality.
Summary of the invention
The problem that the present invention solves provides a kind of imageing sensor and forming method thereof, solves the conventional images transducer, because incident ray enters adjacent photosensitive unit through metal layer reflection, forms the problem of optical crosstalk.
For addressing the above problem, the present invention adopts following technical scheme:
A kind of imageing sensor comprises: Semiconductor substrate, be formed with pel array in the described Semiconductor substrate, and described pixel packets contains photosensitive unit, separates with insulation structure of shallow groove between the neighbor; Be positioned at the photic zone of semiconductor substrate surface, described photic zone is aimed at photosensitive unit; Be positioned at the light non-transmittable layers of semiconductor substrate surface, described light non-transmittable layers is surrounded described photic zone; Be positioned at the metal level of light non-transmittable layers and the conductive plunger of connection adjacent metal.
Optionally, described light non-transmittable layers material is insulating material.
Optionally, described insulating material is the silica nitrogen compound.
Optionally, polysilicon, aluminium, copper or the tungsten of the material of described metal level and conductive plunger for mixing.
Optionally, also comprise: cover the passivation layer of topmost metal layer, be positioned at a plurality of and photosensitive unit lenticule one to one on the described passivation layer.
A kind of formation method of imageing sensor may further comprise the steps: Semiconductor substrate is provided, is formed with pel array in the described Semiconductor substrate, described pixel packets contains photosensitive unit, separates with insulation structure of shallow groove between the neighbor; Form etching stop layer in described Semiconductor substrate; Form the first light non-transmittable layers at described etching stop layer, described light non-transmittable layers covers described photosensitive unit and insulation structure of shallow groove; In the first light non-transmittable layers, form the first through hole; In described the first through hole, fill full conductive materials, form the first conductive plunger; On the first light non-transmittable layers or the discrete the first metal layer of interior formation, described the first metal layer is communicated with the first conductive plunger; Form the second light non-transmittable layers that covers the first metal layer in the first light non-transmittable layers; In the second light non-transmittable layers, form the second conductive plunger; On the second light non-transmittable layers or the second discrete metal level of interior formation, described the second metal level is communicated with the second conductive plunger; Continue to form light non-transmittable layers, the metal level of predetermined quantity and run through the conductive plunger that light non-transmittable layers thickness is communicated with metal level; In the end form the passivation layer that covers last one deck metal level on one deck light non-transmittable layers; Etching passivation layer and light non-transmittable layers form the groove of perpendicular alignmnet photosensitive unit to exposing etching stop layer; In groove, fill full light transmissive material, form photic zone.
Optionally, described light non-transmittable layers material is insulating material.
Optionally, described etching stopping layer material is light transmissive material.
Optionally, described insulating material is the silica nitrogen compound.
Compared with prior art, the present invention has the following advantages:
The imageing sensor that the embodiment of the invention provides includes the photic zone that is positioned at semiconductor substrate surface, and described photic zone is aimed at photosensitive unit; Be positioned at the light non-transmittable layers of semiconductor substrate surface, described light non-transmittable layers is surrounded described photic zone; Be positioned at the metal level of light non-transmittable layers and the conductive plunger of connection adjacent metal; When incident ray irradiation image sensor pixel, incident ray only can enter corresponding photosensitive unit by photic zone, and the light non-transmittable layers that can't pass around the photic zone enters other photosensitive units, has avoided other photosensitive units are consisted of optical crosstalk.
Further, the formation method of the imageing sensor that the embodiment of the invention provides, by in the position of aiming at photosensitive unit hyaline layer being set, light non-transmittable layers is set around hyaline layer, so that incident ray only can enter into corresponding photosensitive unit by photic zone, and can't enter other photosensitive units, avoided other photosensitive units are formed optical crosstalk.
Description of drawings
Fig. 1 is conventional images sensor construction schematic diagram;
Fig. 2 is the schematic diagram that the conventional images transducer forms optical crosstalk;
Fig. 3 is imageing sensor specific embodiment schematic diagram of the present invention;
Fig. 4 is that imageing sensor of the present invention prevents the optical crosstalk schematic diagram;
Fig. 5 is imageing sensor formation method specific embodiment schematic flow sheet of the present invention;
Fig. 6 to Figure 15 is imageing sensor formation method specific embodiment schematic diagram of the present invention.
Embodiment
The present inventor finds existing imageing sensor, and when incident ray during with the incident of certain inclination angle, a part arrives photosensitive unit by transparent interlayer dielectric layer, and another part then can be radiated on the metal level and reflect.Because the position between the metal level that is not connected by conductive plunger, be full of transparent interlayer dielectric layer, so that the incident ray that is radiated at this position is through the metal level Multi reflection, finally enter other photosensitive units (generally being adjacent photosensitive unit), form optical crosstalk, had a strong impact on the image displaying quality of imageing sensor.
For the problems referred to above, the inventor proposes a kind of imageing sensor through researching and analysing, and comprising: Semiconductor substrate, be formed with pel array in the described Semiconductor substrate, and described pixel packets contains photosensitive unit, separates with insulation structure of shallow groove between the neighbor; Be positioned at the photic zone of semiconductor substrate surface, described photic zone is aimed at photosensitive unit; Be positioned at the light non-transmittable layers of semiconductor substrate surface, described light non-transmittable layers is surrounded described photic zone; Be positioned at the metal level of light non-transmittable layers and the conductive plunger of connection adjacent metal.
Imageing sensor provided by the invention, since photic zone only be arranged on photosensitive unit above, then be light non-transmittable layers around the photic zone, therefore when incident ray is injected image sensor pixel, incident ray only can enter corresponding photosensitive unit along photic zone, enter adjacent photosensitive unit and can't pass the light non-transmittable layers that is positioned at around the photic zone, avoided adjacent photosensitive unit is consisted of optical crosstalk, improved the image displaying quality of image sensor pixel.
Below in conjunction with drawings and Examples imageing sensor provided by the present invention is further described.
Fig. 3 is imageing sensor specific embodiment structural representation of the present invention.As shown in Figure 3, imageing sensor of the present invention comprises:
In the present embodiment, described Semiconductor substrate 200 can be silicon-on-insulator substrate (SOI substrate), quartz substrate, ceramic substrate, glass substrate, and also is useful on other device (not shown) of imageing sensor on the substrate.Described pixel comprises photosensitive unit 202, and described photosensitive unit 202 comprises a plurality of light-sensitive elements, for example light sensitive diode, color light transducer.Separated by insulation structure of shallow groove 201 between the described neighbor.
Described photic zone 250 be positioned at photosensitive unit 202 directly over, photic zone 250 materials are transparent material, such as silica, so that light enters photosensitive unit 202 after inciding photic zone from the outside.
Described light non-transmittable layers 210 is positioned at around the described photic zone 250, is formed by light tight insulating material, and such as the silica nitrogen compound, light can't pass light non-transmittable layers 210, so light can not produce optical crosstalk between neighbor; Described light non-transmittable layers 210 is sandwich construction.
Described metal level 220 is positioned at described light non-transmittable layers 210; Described metal level 220 can be sandwich construction, and in an example of the present invention, described metal level 220 is 3-tier architecture; Described metal level 220 can be electrically connected to exterior light detection part (not shown), and every layer of metal level 220 has certain layout, can not keep off above photosensitive unit 202.Need the place that is electrically connected between the described different layers metal level 220, by 230 corresponding connections of conductive plunger; The material of described metal level 220 and conductive plunger 230 can be any conducting metal, such as polysilicon, aluminium, copper or the tungsten that mixes; In an example of the present invention, selected material is metallic aluminium.
In the present embodiment, described imageing sensor also comprises the passivation layer 240 that covers topmost metal layer 220, be positioned at the colored filter 260 on described passivation layer 240 and the photic zone 250, be positioned at the flatness layer 270 on the described colored filter 260, be positioned at a plurality of and photosensitive unit 202 lenticule 280 one to one on the described flatness layer 270.
The material of described passivation layer 240 is consistent with the material of photic zone 250.
The colored filter that described colored filter 260 can select prior art to provide.In an example of present embodiment, the material that is used to form colored filter 260 is the photo-induced etching agent of dyeing.With each photosensitive unit 202 over against the position form a filter, each filter is the light by different colors respectively, for example red, green and blue.
The material of described flatness layer 270 is organic material.
Described lenticule 280 is the plane towards the surface of described flatness layer, and the surface of described flatness layer is convex surface dorsad, each lenticule and corresponding photosensitive unit 202 centrally aligneds.The material that is used to form lenticule 280 can be oxide, also can be organic substance.Be used to form the refractive index of lenticular material between 1.4～1.6.Preferably, on lenticule 280 surfaces the organic film with low-refraction is arranged, so that hyporeflexia, thereby the transmitance of raising light.The refractive index of described low-index material is between 1.1～1.4.
In the present embodiment, according to the actual design needs, can increase one deck flatness layer between passivation layer 240 and colored filter 260, perhaps total is all without flatness layer, but this change does not affect essence of the present invention.
In the present embodiment, if image sensor pixel only is used for the black color field, then colored filter 260 can arrange.
Fig. 4 is that imageing sensor specific embodiment of the present invention prevents the optical crosstalk schematic diagram.As shown in Figure 4, when incident ray 290 shone image sensor pixel with certain angle of inclination, incident ray 290 only can pass photic zone 250 and enter photosensitive unit 202.This is because 250 tops that are arranged on photosensitive unit 202 of photic zone, then be light non-transmittable layers 210 around the photic zone 250, therefore when incident ray 290 is injected into photic zone 250 sidewall, the stopping of light non-transmittable layers 210 around the photic zone 250 can be subject to being positioned at and adjacent photosensitive unit 202 can't be entered, avoided adjacent photosensitive unit is consisted of optical crosstalk, improved the image displaying quality of image sensor pixel, thereby avoided optical crosstalk, improved the image displaying quality of imageing sensor.
In addition, the present invention also provides a kind of formation method of imageing sensor.Fig. 5 is the specific embodiment flow chart of imageing sensor formation method of the present invention, is specially: as shown in Figure 5,
Execution in step S11 provides Semiconductor substrate, is formed with pel array in the described Semiconductor substrate, and described pixel packets contains photosensitive unit, separates with insulation structure of shallow groove between the neighbor;
Execution in step S12 forms etching stop layer in described Semiconductor substrate;
Execution in step S13 forms the first light non-transmittable layers at described etching stop layer, and described light non-transmittable layers covers described photosensitive unit and insulation structure of shallow groove;
Execution in step S14 forms the first through hole in the first light non-transmittable layers;
Execution in step S15 fills full conductive materials in described the first through hole, form the first conductive plunger; Execution in step S16, on the first light non-transmittable layers or the discrete the first metal layer of interior formation, described the first metal layer is communicated with the first conductive plunger;
Execution in step S17 forms the second light non-transmittable layers that covers the first metal layer in the first light non-transmittable layers;
Execution in step S18 forms the second conductive plunger in the second light non-transmittable layers;
Execution in step S19, on the second light non-transmittable layers or the second discrete metal level of interior formation, described the second metal level is communicated with the second conductive plunger;
Execution in step S20 continues to form light non-transmittable layers, the metal level of predetermined quantity and run through the conductive plunger that light non-transmittable layers thickness is communicated with metal level;
Execution in step S21 in the end forms the passivation layer that covers last one deck metal level on one deck light non-transmittable layers;
Execution in step S22, etching passivation layer and light non-transmittable layers form the groove of perpendicular alignmnet photosensitive unit to exposing etching stop layer;
Execution in step S23 fills full light transmissive material in groove, form photic zone.
The formation method of the imageing sensor that the embodiment of the invention provides, by above the aligning photosensitive unit, hyaline layer being set, light non-transmittable layers is set around hyaline layer, so that incident ray only can enter into corresponding photosensitive unit by photic zone, and can't enter other photosensitive units, avoided other photosensitive units are formed optical crosstalk, Effective Raise the image displaying quality of graphical sensory device pixel.
Fig. 6 to Figure 15 is the specific embodiment schematic diagram of imageing sensor formation method of the present invention.As shown in Figure 6, provide Semiconductor substrate 300; Be formed with pixel in described Semiconductor substrate 300, described pixel packets contains photosensitive unit 302; Separated by insulation structure of shallow groove 301 between neighbor.
In the present embodiment, the material of Semiconductor substrate 300 is any material that can support that photosensitive unit 302 forms, for example can be silicon-on-insulator substrate (SOI substrate), quartz substrate, ceramic substrate, glass substrate, and also be formed with other device (not shown) for imageing sensor on the substrate.
Described photosensitive unit 302 comprises a plurality of light-sensitive elements, for example color light transducer, light sensitive diode.
As shown in Figure 7, form etching stop layer 310 in described Semiconductor substrate 300.
In the present embodiment, described etching stop layer 310 materials are transparent insulation material, such as silica, and protection Semiconductor substrate 300 when being used for etching.
As shown in Figure 8, form the first light non-transmittable layers 320 at described etching stop layer 310.
In the present embodiment, described the first light non-transmittable layers 320 materials are light tight insulating material, such as the nitrogen Si oxide.
As shown in Figure 9, at described the first light non-transmittable layers 320 interior formation the first conductive plungers 340.Concrete formation technique is as follows: form the first photoresist layer (not shown) in described the first light non-transmittable layers 320, and define via hole image; Take the first photoresist layer as mask, along via hole image etching the first light non-transmittable layers 320 and etching stop layer 310 to exposing Semiconductor substrate 300, form the first through hole; Fill full conductive materials in the described through hole, and with the smooth conductive materials of chemical mechanical milling method to exposing the first light non-transmittable layers 320, formation conductive plunger 340.
In the present embodiment, the common conductive materials of the material selection of conductive plunger 340 is such as polysilicon, aluminium, copper or the tungsten that mixes.
As shown in figure 10, form discrete the first metal layer 350 in the first light non-transmittable layers 320, described metal level 350 is communicated with the first conductive plunger 340.The technique of concrete formation the first metal layer 350 is as follows: form metal level with vacuum vapour deposition in the first light non-transmittable layers 320; Form the second photoresist layer (not shown) at metal level, and define the first metal wiring pattern; Take the second photoresist layer as mask, along the first metal wiring pattern etching sheet metal to exposing the first light non-transmittable layers 320, form the first metal layer 350 with the dry etching method; Remove the second photoresist layer.
As shown in figure 11, continue to form the second metal level 352, the 3rd metal level 354, the second light non-transmittable layers 322, the 3rd light non-transmittable layers 324, the second conductive plungers 342, the 3rd conductive plunger 344.The technique of concrete each rete of formation forms as described in the first light non-transmittable layers 320, the first conductive plunger 340, the first metal layer 350 such as the front.
In the present embodiment, only enumerate being formed to three-layer metal layer 354, if the expection number of metal is many, then forms as stated above respective metal layers, light non-transmittable layers and conductive plunger and get final product.
As shown in figure 12, form the passivation layer 360 that covers the 3rd metal level 354 with chemical vapour deposition technique in described the 3rd light non-transmittable layers 324, and the described passivation layer 360 of planarization.
In the present embodiment, the material of described passivation layer 360 can be organic material or inorganic material, and such as transparent silica, silicon nitride, its main protection component is avoided the impact of moisture and scratch
As shown in figure 13, the described passivation layer 360 of etching and light non-transmittable layers form the groove of aiming at photosensitive unit 302 to exposing etching stop layer 310.Concrete formation technique is as follows: form the 3rd photoresist layer (not shown) at passivation layer 360, and define the groove figure of aiming at photosensitive unit 302; Take described the 3rd photoresist layer as mask, along groove figure, the described passivation layer 360 of etching and the 3rd light non-transmittable layers 324, the second light non-transmittable layers 322 and the first light non-transmittable layers 320 form groove to exposing etching stop layer 310.
As shown in figure 14, to the full light transmissive material of described trench fill, form photic zone 370.
In the present embodiment, described light transmissive material is silica printing opacity insulating material.
In the present embodiment, can after forming last one deck metal level 354, form again the light non-transmittable layers that one deck covers last one deck metal level 354, and then form passivation layer 360.Present embodiment can also form before the passivation layer 360 after forming last one deck metal level 354, forms first groove and fill full light transmissive material to form photic zone 370, and described photic zone 370 covers last one deck metal level 354; And then at photic zone 370 formation passivation layers 360.
As shown in figure 15, form colored filters 380 on photic zone 370 surface, form flatness layers 385 on described colored filter 380 surfaces, and form one to one lenticule 390 of a plurality of and photosensitive unit on described flatness layer 385 surfaces.
In the present embodiment, the colored filter that described colored filter 380 can select prior art to provide; With each photosensitive unit 302 over against the position form a filter, each filter is the light by different colors respectively, for example red, green and blue.
In the present embodiment, described lenticule 390 is the plane towards the surface of described flatness layer, and the surface of described flatness layer is convex surface dorsad, each lenticule 390 and corresponding photosensitive unit centrally aligned.The material that is used to form lenticule 390 can be oxide, also can be organic substance.Be used to form the refractive index of material of lenticule 390 between 1.4～1.6.Preferably, on lenticule 390 surfaces the organic film with low-refraction is arranged, so that hyporeflexia, thereby the transmitance of raising light.The refractive index of described low-index material is between 1.1～1.4.
In the present embodiment, according to actual conditions, also flatness layer 385 can be set.If image sensor pixel is the black and white image sensor pixel, does not then need to arrange and make colored filter 380.
The formation method of the imageing sensor that the embodiment of the invention provides, by above the aligning photosensitive unit, hyaline layer being set, light non-transmittable layers is set around hyaline layer, so that incident ray only can enter into corresponding photosensitive unit by photic zone, and can't enter other photosensitive units, avoided other photosensitive units are formed optical crosstalk, Effective Raise the image displaying quality of graphical sensory device pixel.
Although the present invention with preferred embodiment openly as above; but it is not to limit the present invention; any those skilled in the art without departing from the spirit and scope of the present invention; can make possible change and modification, so protection scope of the present invention should be as the criterion with the scope that claim of the present invention was defined.
Claims (7)
1. an imageing sensor is characterized in that, comprising:
Semiconductor substrate is formed with pel array in the described Semiconductor substrate, and described pixel packets contains photosensitive unit, separates with insulation structure of shallow groove between the neighbor;
Be positioned at the photic zone of semiconductor substrate surface, described photic zone is aimed at photosensitive unit;
Be positioned at the light non-transmittable layers of semiconductor substrate surface, described light non-transmittable layers is surrounded described photic zone, and described light non-transmittable layers is the silica nitrogen compound;
Be positioned at the metal level of light non-transmittable layers and the conductive plunger of connection adjacent metal.
2. imageing sensor according to claim 1 is characterized in that, polysilicon, aluminium, copper or the tungsten of the material of described metal level and conductive plunger for mixing.
3. imageing sensor according to claim 1 is characterized in that, also comprises: cover the passivation layer of topmost metal layer, be positioned at a plurality of and photosensitive unit lenticule one to one on the described passivation layer.
4. the formation method of an imageing sensor is characterized in that, may further comprise the steps:
Semiconductor substrate is provided, is formed with pel array in the described Semiconductor substrate, described pixel packets contains photosensitive unit, separates with insulation structure of shallow groove between the neighbor;
Form etching stop layer in described Semiconductor substrate;
Form the first light non-transmittable layers at described etching stop layer, described the first light non-transmittable layers covers described photosensitive unit and insulation structure of shallow groove;
In the first light non-transmittable layers, form the first through hole;
In described the first through hole, fill full conductive materials, form the first conductive plunger;
On the first light non-transmittable layers or the discrete the first metal layer of interior formation, described the first metal layer is communicated with the first conductive plunger;
Form the second light non-transmittable layers that covers the first metal layer in the first light non-transmittable layers;
In the second light non-transmittable layers, form the second conductive plunger;
On the second light non-transmittable layers or the second discrete metal level of interior formation, described the second metal level is communicated with the second conductive plunger;
Continue to form light non-transmittable layers, the metal level of predetermined quantity and run through the conductive plunger that light non-transmittable layers thickness is communicated with metal level;
In the end form the passivation layer that covers last one deck metal level on one deck light non-transmittable layers;
Etching passivation layer and light non-transmittable layers form the groove of perpendicular alignmnet photosensitive unit to exposing etching stop layer;
In groove, fill full light transmissive material, form photic zone.
5. formation method according to claim 4 is characterized in that, described light non-transmittable layers material is insulating material.
6. formation method according to claim 4 is characterized in that, described etching stopping layer material is light transmissive material.
7. formation method according to claim 5 is characterized in that, described insulating material is the silica nitrogen compound.
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| US20130256822A1 (en) * | 2012-03-28 | 2013-10-03 | Omnivision Technologies, Inc. | Method and device with enhanced ion doping |
| CN102779826A (en) * | 2012-08-15 | 2012-11-14 | 豪威科技(上海)有限公司 | Backside illuminated CMOS (Complementary Metal Oxide Semiconductor) image sensor |
| CN103151364A (en) * | 2013-03-15 | 2013-06-12 | 格科微电子（上海）有限公司 | CMOS (Complementary Metal-Oxide-Semiconductor) image sensor and forming method thereof |
| CN103268881B (en) * | 2013-05-28 | 2016-06-29 | 北京思比科微电子技术股份有限公司 | A kind of imageing sensor of HDR |
| CN103325804A (en) * | 2013-06-28 | 2013-09-25 | 上海宏力半导体制造有限公司 | Cmos image sensor structure |
| TWI548075B (en) * | 2015-05-28 | 2016-09-01 | 力晶科技股份有限公司 | Image sensor and method of manufacturing the same |
| US10782184B2 (en) * | 2016-09-06 | 2020-09-22 | Advanced Semiconductor Engineering, Inc. | Optical device and method of manufacturing the same |
| CN106601765B (en) * | 2016-12-16 | 2018-05-08 | 深圳市华海技术有限公司 | Black and white cmos image sensor and the manufacture method for improving its sensitivity |
| CN111199167B (en) * | 2018-11-16 | 2023-06-20 | 世界先进积体电路股份有限公司 | Optical sensing structure and forming method thereof |
| CN111769127A (en) * | 2020-07-02 | 2020-10-13 | 芯盟科技有限公司 | Image sensor, camera device based on time-of-flight technology and preparation method |
| WO2022261977A1 (en) * | 2021-06-18 | 2022-12-22 | 苏州晶湛半导体有限公司 | Front-illuminated image sensor |
| CN115236001A (en) * | 2022-07-26 | 2022-10-25 | 豪威半导体（上海）有限责任公司 | Image sensor and manufacturing method thereof |
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| US20090020838A1 (en) * | 2007-07-17 | 2009-01-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for reducing optical cross-talk in image sensors |
| KR100997299B1 (en) * | 2007-09-07 | 2010-11-29 | 주식회사 동부하이텍 | Image Sensor and Method for Manufacturing Thereof |
| US7816641B2 (en) * | 2007-12-28 | 2010-10-19 | Candela Microsystems (S) Pte. Ltd. | Light guide array for an image sensor |
| CN101582435B (en) * | 2008-05-16 | 2012-03-14 | 鸿富锦精密工业（深圳）有限公司 | Packaging structure for image sensing wafer and camera module applying same |
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