CN103268881A - Image sensor with high dynamic range - Google Patents
Image sensor with high dynamic range Download PDFInfo
- Publication number
- CN103268881A CN103268881A CN2013102045708A CN201310204570A CN103268881A CN 103268881 A CN103268881 A CN 103268881A CN 2013102045708 A CN2013102045708 A CN 2013102045708A CN 201310204570 A CN201310204570 A CN 201310204570A CN 103268881 A CN103268881 A CN 103268881A
- Authority
- CN
- China
- Prior art keywords
- dielectric
- photochromic material
- sensor devices
- light
- catalyst
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Granted
Links
- 239000000463 material Substances 0.000 claims abstract description 33
- 239000003054 catalyst Substances 0.000 claims abstract description 23
- 229910052751 metal Inorganic materials 0.000 claims abstract description 14
- 239000002184 metal Substances 0.000 claims abstract description 14
- 230000000694 effects Effects 0.000 claims abstract description 7
- 239000004065 semiconductor Substances 0.000 claims abstract description 5
- 239000000758 substrate Substances 0.000 claims abstract description 4
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 6
- QPLDLSVMHZLSFG-UHFFFAOYSA-N Copper oxide Chemical compound [Cu]=O QPLDLSVMHZLSFG-UHFFFAOYSA-N 0.000 claims description 4
- 239000011521 glass Substances 0.000 claims description 4
- ADZWSOLPGZMUMY-UHFFFAOYSA-M silver bromide Chemical compound [Ag]Br ADZWSOLPGZMUMY-UHFFFAOYSA-M 0.000 claims description 4
- SDLBJIZEEMKQKY-UHFFFAOYSA-M silver chlorate Chemical compound [Ag+].[O-]Cl(=O)=O SDLBJIZEEMKQKY-UHFFFAOYSA-M 0.000 claims description 4
- 229960004643 cupric oxide Drugs 0.000 claims description 2
- 239000000126 substance Substances 0.000 abstract description 13
- 230000003287 optical effect Effects 0.000 abstract description 9
- 238000010586 diagram Methods 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 5
- 230000035945 sensitivity Effects 0.000 description 5
- 206010070834 Sensitisation Diseases 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 4
- 230000008313 sensitization Effects 0.000 description 4
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 229910052709 silver Inorganic materials 0.000 description 3
- 239000004332 silver Substances 0.000 description 3
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 2
- ZAMOUSCENKQFHK-UHFFFAOYSA-N Chlorine atom Chemical compound [Cl] ZAMOUSCENKQFHK-UHFFFAOYSA-N 0.000 description 2
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 2
- 229910052794 bromium Inorganic materials 0.000 description 2
- 229910052801 chlorine Inorganic materials 0.000 description 2
- 239000000460 chlorine Substances 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 230000001105 regulatory effect Effects 0.000 description 2
- 229920006395 saturated elastomer Polymers 0.000 description 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 1
- 238000006555 catalytic reaction Methods 0.000 description 1
- 230000006835 compression Effects 0.000 description 1
- 238000007906 compression Methods 0.000 description 1
- 229910052802 copper Inorganic materials 0.000 description 1
- 239000010949 copper Substances 0.000 description 1
- 239000003989 dielectric material Substances 0.000 description 1
- 239000003814 drug Substances 0.000 description 1
- 230000013632 homeostatic process Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 230000003647 oxidation Effects 0.000 description 1
- 238000007254 oxidation reaction Methods 0.000 description 1
- 230000036961 partial effect Effects 0.000 description 1
Images
Landscapes
- Solid State Image Pick-Up Elements (AREA)
Abstract
The invention discloses an image sensor with a high dynamic range. The image sensor mainly comprises a photosensitive device placed inside a semiconductor substrate, colorless and transparent insulating media above the photosensitive device, isolating metal embedded in the insulating media, colorized optical filters and micro lenses, wherein the colorized optical filters and the micro lenses are sequentially arranged above the insulating media. Photochromic materials and corresponding catalysts are evenly added in a pre-set region of one insulating medium. The photochromic materials are used for producing black substances in a decomposing mode under the effect of light. The catalysts are used for reducing the black substances which are produced in the decomposing mode into the photochromic materials. By the adoption of the image sensor, output image quality is improved.
Description
Technical field
The present invention relates to field of semiconductor fabrication, relate in particular to a kind of imageing sensor of high dynamic range.
Background technology
Imageing sensor has been widely used in digital camera, cell phone, medicine equipment, automobile and other application scenarios.Particularly make the fast development of image sensor technologies, make people to the output image quality of imageing sensor higher requirement arranged.
In the prior art, the structure that generally all adopts of imageing sensor as shown in Figure 1.101 is dielectric, and 102 for being produced on sensor devices in the semiconductor substrate, and 103 for being embedded in the isolating metal in the dielectric, and 104 is colored filter, and 105 is lenticule.Among Fig. 1, passing lenticule 105, colored filter 104 and water white transparency dielectric 101 backs successively from the light of lenticule 105 top incidents is absorbed by sensor devices 102, the photosignal amount that produces in sensor devices is directly proportional with the incident illumination amount, this type of sensor devices is in the field of business to be called linear sensor devices, and the photoelectric respone curve of linear sensor devices as shown in Figure 2.Among Fig. 2, transverse axis characterizes the pixel exposure light intensity, the longitudinal axis is characterized in the photosignal amount that produces in the sensor devices, photosignal amount in the sensor devices and the exposure light intensity of pixel are linear, wherein Esat1 is the pixel exposure light intensity of sensor devices when saturated, and Qsat is the saturated maximum photosignal amount of sensor devices.
Linear sensor devices of the prior art can not be gathered the light signal on the high light intensity Esat1, the image information that adopts the imageing sensor of this type of sensor devices can't collect high illumination material object; The dynamic range that is linear sensor devices is little, thereby has reduced the output image quality of imageing sensor.
Summary of the invention
The purpose of this invention is to provide a kind of imageing sensor of high dynamic range, enlarged dynamic range, improved the quality of output image.
The objective of the invention is to be achieved through the following technical solutions:
A kind of imageing sensor of high dynamic range, this transducer mainly comprises: place sensor devices, this sensor devices top of semiconductor substrate the water white transparency dielectric, be embedded in the isolating metal of dielectric, and the colored filter and the lenticule that are successively set on this dielectric top;
Wherein, be added with photochromic material and corresponding catalyst in the presumptive area of described dielectric equably; Described photochromic material is used for decompositing atrament under the effect of light; Described catalyst is used for the atrament that decomposites is reduced to this photochromic material.
As seen from the above technical solution provided by the invention, the dielectric that contains photochromic material by employing can be regulated color automatically according to intensity of incident light; When light was more weak, dielectric was of light color, optical transmission rate height, sensor devices highly sensitive; When light was strong, the dielectric color was dark, and the optical transmission rate is low, and the sensitivity of sensor devices is low.That is, the photoelectric respone curve of the sensor devices during by the compression intense light irradiation, sensor devices can be gathered the material picture signal of how high illumination, thereby has promoted the image quality that transducer is gathered.
Description of drawings
In order to be illustrated more clearly in the technical scheme of the embodiment of the invention, the accompanying drawing of required use is done to introduce simply in will describing embodiment below, apparently, accompanying drawing in describing below only is some embodiments of the present invention, for those of ordinary skill in the art, under the prerequisite of not paying creative work, can also obtain other accompanying drawings according to these accompanying drawings.
The schematic diagram of the image sensor architecture that provides in the background technology of the present invention is provided Fig. 1;
The schematic diagram of the sensor devices photoelectric respone of the imageing sensor that provides in the background technology of the present invention is provided Fig. 2;
The schematic diagram of the image sensor architecture of a kind of high dynamic range that Fig. 3 provides for the embodiment of the invention;
The schematic diagram of the image sensor architecture of another high dynamic range that Fig. 4 provides for the embodiment of the invention;
The schematic diagram of the image sensor architecture of the another kind of high dynamic range that Fig. 5 provides for the embodiment of the invention;
The signal of the sensor devices photoelectric respone of the imageing sensor of a kind of high dynamic range that Fig. 6 provides for the embodiment of the invention.
Embodiment
Below in conjunction with the accompanying drawing in the embodiment of the invention, the technical scheme in the embodiment of the invention is clearly and completely described, obviously, described embodiment only is the present invention's part embodiment, rather than whole embodiment.Based on embodiments of the invention, those of ordinary skills belong to protection scope of the present invention not making the every other embodiment that obtains under the creative work prerequisite.
In order to obtain high quality images, the embodiment of the invention is started with from the photoelectric respone character of improving imageing sensor, reduce the light transmission of intense light irradiation pixel, compress the sensor devices photoelectric respone sensitivity curve of high photoenvironment, expand the sensitization range of light intensity of sensor devices, thereby make transducer detect detailed information in kind under more intense light irradiation environment, therefore, promoted the quality of transducer output image.
In order to realize the technical purpose of above-mentioned expansion dynamic range of sensor, the water white transparency dielectric that the embodiment of the invention has been optimized the sensor devices top (for example, silex glass) to the attribute of light, in the presumptive area of water white transparency silex glass, add photochromic material equably, for example silver bromide or silver chlorate; Also in the water white transparency silex glass, add simultaneously trace catalyst, for example cupric oxide equably.
Under unglazed or low light environment, photochromic material exists with the form of chemical molecular silver bromide or silver chlorate, shows as colourlessly or light, can not reduce the optical transmission rate, therefore, can not reduce the low light level according to the sensitivity of sensor devices; Under the high light environment, the photochromic material chemical molecular decomposites silver-colored simple substance and bromine or elemental chlorine, the physical color of silver simple substance is black, the more strong silver-colored simple substance that decomposites of light is more many, more many dielectrics color is more dark for silver simple substance, the dark colour dielectric has blocked the part incident ray, has reduced the luminous sensitivity of sensor devices; When the photochromic material chemical molecular resolved into simple substance, the effect of catalyst oxidation copper was opposite with the effect of light, simple substance silver and simple substance bromine or chlorine catalysis is generated as chemical molecular silver bromide or silver chlorate, thereby makes insulating material revert to colourless state.Light and catalyst are homeostasis processes to the effect of photochromic material, and under unglazed or low light environment, catalyst plays a leading role; And under the high light environment, light plays a leading role, and light and catalyst are expressed as following equation to the effect of photochromic material:
Based on the operation principle of imageing sensor among the invention described above embodiment, below in conjunction with accompanying drawing 3-6 the scope that the dielectric in this transducer adds photochromic material and catalyst is done further introduction.
1) as shown in Figure 3,301 for adding the dielectric of photochromic material and trace catalyst equably.Among Fig. 3, add photochromic material and catalyst uniformly in whole dielectric, its scope is to contact with sensor devices down, goes up to contact with colored filter.
2) as shown in Figure 4,406 is the zone of evenly adding photochromic material and catalyst; Be that photochromic material and catalyst only are added on the light path zone that does not comprise isolating metal 403; And the medium of isolating metal 403 still adopts the dielectric 401 that does not add photochromic material and catalyst.Dielectric 406 tops of evenly adding photochromic material and catalyst are connected with colored filter 404, and the bottom links to each other with sensor devices.Isolating metal 403 residing scope and sizes of not adding the dielectric 401 of photochromic material are determined by the isolating metal volume that the different images transducer adopts.
Because isolating metal 403 is own light tight, and its partial action is for fear of the optical crosstalk between neighbor, therefore do not process in the dielectric 401 under the isolating metal 403, only effective optical path is added photochromic material and catalyst, add volume and reduce, can effectively reduce cost.In addition, dielectric 401 and dielectric 406 adopt different materials, and the ray refractive index difference can further improve and use optical efficiency.
3) as shown in Figure 5,506 is the zone of evenly adding photochromic material and catalyst; Similar with a last situation, namely dielectric is divided into two: 506, one of a dielectric for interpolation photochromic material and catalyst is the dielectric that does not add photochromic material and catalyst 501 under the isolating metal 503.Wherein, dielectric 506 only is produced between dielectric 501 tops and the colored filter below.Dielectric 506 into strips, its width can be regulated accordingly according to the isolating metal volume of actual conditions and employing.This kind addition manner, materials are less, and structure is the simplest, easier realization in actual fabrication process.
The technical scheme of the embodiment of the invention has been improved the photoelectric respone character of imageing sensor, has reduced the light transmission of intense light irradiation pixel, has compressed the sensor devices photoelectric respone sensitivity curve of high photoenvironment, has expanded the sensitization range of light intensity of sensor devices.As shown in Figure 6, be the schematic diagram of the sensor devices photoelectric respone of imageing sensor of the present invention; Wherein Esat1 is the highest exposure light intensity that the heritage optical device can detect, Esat2 is the highest exposure light intensity that the sensor devices of the embodiment of the invention can detect, the photoelectric respone curve of sensor devices is nonlinear curve, with human eye to the sensitization Attribute class of light signal seemingly; Therefore, sensor devices of the present invention can detect high exposure light intensity Esat1 to the image information in kind between the Esat2 scope, expand the sensitization range of light intensity of sensor devices, improved the dynamic range of imageing sensor, thereby promoted the output image quality of transducer.
The above; only for the preferable embodiment of the present invention, but protection scope of the present invention is not limited thereto, and anyly is familiar with those skilled in the art in the technical scope that the present invention discloses; the variation that can expect easily or replacement all should be encompassed within protection scope of the present invention.Therefore, protection scope of the present invention should be as the criterion with the protection range of claims.
Claims (5)
1. the imageing sensor of a high dynamic range, it is characterized in that, this transducer mainly comprises: place sensor devices, this sensor devices top of semiconductor substrate the water white transparency dielectric, be embedded in the isolating metal of dielectric, and the colored filter and the lenticule that are successively set on this dielectric top;
Wherein, be added with photochromic material and corresponding catalyst in the presumptive area of described dielectric equably; Described photochromic material is used for decompositing atrament under the effect of light; Described catalyst is used for the atrament that decomposites is reduced to this photochromic material.
2. imageing sensor according to claim 1 is characterized in that, described dielectric comprises: silex glass.
3. imageing sensor according to claim 1 is characterized in that, described photochromic material comprises: silver bromide or silver chlorate.
4. according to claim 1 or 3 described imageing sensors, it is characterized in that described catalyst comprises: cupric oxide.
5. according to the described imageing sensor of claim 1, it is characterized in that the presumptive area of described dielectric comprises:
Whole dielectric zone;
Or, do not comprise the light path zone of isolating metal in the described dielectric;
Or, be predetermined value and the zone that does not comprise isolating metal near described colored filter, width.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310204570.8A CN103268881B (en) | 2013-05-28 | 2013-05-28 | A kind of imageing sensor of HDR |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201310204570.8A CN103268881B (en) | 2013-05-28 | 2013-05-28 | A kind of imageing sensor of HDR |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN103268881A true CN103268881A (en) | 2013-08-28 |
| CN103268881B CN103268881B (en) | 2016-06-29 |
Family
ID=49012502
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201310204570.8A Expired - Fee Related CN103268881B (en) | 2013-05-28 | 2013-05-28 | A kind of imageing sensor of HDR |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN103268881B (en) |
Cited By (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103792687A (en) * | 2014-02-10 | 2014-05-14 | 成都京东方光电科技有限公司 | Colored film substrate and displaying device |
| CN104135631A (en) * | 2014-08-15 | 2014-11-05 | 北京思比科微电子技术股份有限公司 | CMOS image sensor pixel |
| CN104485427A (en) * | 2014-12-26 | 2015-04-01 | 北京维信诺科技有限公司 | Transparent organic electroluminescence device and preparing method thereof |
| CN106060482A (en) * | 2016-07-22 | 2016-10-26 | 浙江宇视科技有限公司 | Image acquisition equipment and method |
| CN106131444A (en) * | 2016-07-08 | 2016-11-16 | 上海大学 | A kind of hardware realizes the imageing sensor that high dynamic illumination renders |
| CN109154869A (en) * | 2016-06-07 | 2019-01-04 | 深圳市汇顶科技股份有限公司 | The optics collimator of optical sensor module under screen for shielding upper fingerprint induction |
| CN109616486A (en) * | 2018-11-23 | 2019-04-12 | 德淮半导体有限公司 | Imaging sensor and its manufacturing method |
| CN112041988A (en) * | 2019-04-28 | 2020-12-04 | 深圳市大疆创新科技有限公司 | Image sensor chip, manufacturing method, image sensor, and imaging device |
| US11017068B2 (en) | 2015-06-18 | 2021-05-25 | Shenzhen GOODIX Technology Co., Ltd. | Optical sensing performance of under-screen optical sensor module for on-screen fingerprint sensing |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090020838A1 (en) * | 2007-07-17 | 2009-01-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for reducing optical cross-talk in image sensors |
| CN101431085A (en) * | 2007-11-09 | 2009-05-13 | 鸿富锦精密工业（深圳）有限公司 | Camera module group with automatic exposure function |
| CN102231384A (en) * | 2011-06-22 | 2011-11-02 | 格科微电子（上海）有限公司 | Image sensor and manufacturing method thereof |
| CN102254922A (en) * | 2010-05-20 | 2011-11-23 | 索尼公司 | Solid-state imaging device and electronic equipment |
-
2013
- 2013-05-28 CN CN201310204570.8A patent/CN103268881B/en not_active Expired - Fee Related
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20090020838A1 (en) * | 2007-07-17 | 2009-01-22 | Taiwan Semiconductor Manufacturing Company, Ltd. | Apparatus and method for reducing optical cross-talk in image sensors |
| CN101431085A (en) * | 2007-11-09 | 2009-05-13 | 鸿富锦精密工业（深圳）有限公司 | Camera module group with automatic exposure function |
| CN102254922A (en) * | 2010-05-20 | 2011-11-23 | 索尼公司 | Solid-state imaging device and electronic equipment |
| CN102231384A (en) * | 2011-06-22 | 2011-11-02 | 格科微电子（上海）有限公司 | Image sensor and manufacturing method thereof |
Cited By (11)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103792687A (en) * | 2014-02-10 | 2014-05-14 | 成都京东方光电科技有限公司 | Colored film substrate and displaying device |
| US9310537B2 (en) | 2014-02-10 | 2016-04-12 | Boe Technology Group Co., Ltd. | Color filter substrate and display device |
| CN104135631A (en) * | 2014-08-15 | 2014-11-05 | 北京思比科微电子技术股份有限公司 | CMOS image sensor pixel |
| CN104485427A (en) * | 2014-12-26 | 2015-04-01 | 北京维信诺科技有限公司 | Transparent organic electroluminescence device and preparing method thereof |
| CN104485427B (en) * | 2014-12-26 | 2018-02-13 | 北京维信诺科技有限公司 | A kind of transparent Organnic electroluminescent device and preparation method thereof |
| US11017068B2 (en) | 2015-06-18 | 2021-05-25 | Shenzhen GOODIX Technology Co., Ltd. | Optical sensing performance of under-screen optical sensor module for on-screen fingerprint sensing |
| CN109154869A (en) * | 2016-06-07 | 2019-01-04 | 深圳市汇顶科技股份有限公司 | The optics collimator of optical sensor module under screen for shielding upper fingerprint induction |
| CN106131444A (en) * | 2016-07-08 | 2016-11-16 | 上海大学 | A kind of hardware realizes the imageing sensor that high dynamic illumination renders |
| CN106060482A (en) * | 2016-07-22 | 2016-10-26 | 浙江宇视科技有限公司 | Image acquisition equipment and method |
| CN109616486A (en) * | 2018-11-23 | 2019-04-12 | 德淮半导体有限公司 | Imaging sensor and its manufacturing method |
| CN112041988A (en) * | 2019-04-28 | 2020-12-04 | 深圳市大疆创新科技有限公司 | Image sensor chip, manufacturing method, image sensor, and imaging device |
Also Published As
| Publication number | Publication date |
|---|---|
| CN103268881B (en) | 2016-06-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN103268881A (en) | Image sensor with high dynamic range | |
| CN102254922B (en) | Solid-state imaging device and electronic equipment | |
| CN109951660B (en) | Pixel structure, CMOS image sensor, image signal processor and terminal | |
| CN109103207A (en) | Single exposure high dynamic range sensor | |
| WO2005057657A3 (en) | Semiconductor image sensor comprising a metal mesh filter | |
| TWM395169U (en) | Color filter, photographic lens, photographic apparatus, and portable terminal equipment | |
| JP2017163124A (en) | Image sensor structure | |
| EP3242479A1 (en) | Image sensor, imaging device, mobile terminal and imaging method | |
| US20220068990A1 (en) | Complementary metal-oxide semiconductor image sensor, image processing method and electronic device | |
| CN103327220A (en) | Denoising method oriented by green channel on low illumination Bayer image | |
| CN102959434B (en) | Color separation filtering array, solid-state imager, camera head and display device | |
| CN110049261B (en) | Pixel structure, image sensor and terminal | |
| CN110061019B (en) | CMOS image sensor, image processing method and storage medium | |
| JP2006203011A (en) | Solid-state imaging device | |
| CN109587378A (en) | Photographic device and camera arrangement | |
| CN105681771A (en) | Array imaging system and image sensor | |
| CN105378556A (en) | Image generating apparatus and method and non-transitory recordable medium | |
| CN105810702A (en) | Optical isolation grid over color filter array | |
| CN110112156B (en) | Pixel structure, CMOS image sensor and terminal | |
| CN204633909U (en) | Imager | |
| EP3001672A1 (en) | Plenoptic camera comprising a spatial light modulator | |
| CN103928483A (en) | Image sensor pixel structure for improving sensitivity of red pixels and blue pixels | |
| CN110071130B (en) | CMOS image sensor, image processing method and storage medium | |
| CN102143332B (en) | Standard complementary metal oxide semiconductor (CMOS) process-based color image sensor | |
| CN105826341A (en) | Liquid crystal based imaging detection chip of addressable chromatographic field |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C06 | Publication | ||
| PB01 | Publication | ||
| C10 | Entry into substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20160629 |