CN109616486A - Imaging sensor and its manufacturing method - Google Patents
Imaging sensor and its manufacturing method Download PDFInfo
- Publication number
- CN109616486A CN109616486A CN201811407379.2A CN201811407379A CN109616486A CN 109616486 A CN109616486 A CN 109616486A CN 201811407379 A CN201811407379 A CN 201811407379A CN 109616486 A CN109616486 A CN 109616486A
- Authority
- CN
- China
- Prior art keywords
- lenticule
- imaging sensor
- mixed
- light
- colour filter
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Pending
Links
- 238000003384 imaging method Methods 0.000 title claims abstract description 49
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 16
- 239000000463 material Substances 0.000 claims abstract description 105
- 239000000758 substrate Substances 0.000 claims abstract description 37
- 238000002845 discoloration Methods 0.000 claims abstract description 33
- 239000004065 semiconductor Substances 0.000 claims abstract description 32
- 206010070834 Sensitisation Diseases 0.000 claims abstract description 25
- 230000008313 sensitization Effects 0.000 claims abstract description 25
- 239000000843 powder Substances 0.000 claims description 26
- KAESVJOAVNADME-UHFFFAOYSA-N Pyrrole Chemical compound C=1C=CNC=1 KAESVJOAVNADME-UHFFFAOYSA-N 0.000 claims description 20
- 230000001235 sensitizing effect Effects 0.000 claims description 19
- 239000011347 resin Substances 0.000 claims description 11
- 229920005989 resin Polymers 0.000 claims description 11
- 239000004611 light stabiliser Substances 0.000 claims description 8
- 239000003963 antioxidant agent Substances 0.000 claims description 7
- 230000003078 antioxidant effect Effects 0.000 claims description 7
- 150000004820 halides Chemical class 0.000 claims description 5
- 229910052709 silver Inorganic materials 0.000 claims description 5
- 239000004332 silver Substances 0.000 claims description 5
- -1 silver halide Chemical class 0.000 claims description 4
- 239000007800 oxidant agent Substances 0.000 claims 1
- 230000001590 oxidative effect Effects 0.000 claims 1
- 238000009738 saturating Methods 0.000 claims 1
- 238000000034 method Methods 0.000 description 17
- 229920002120 photoresistant polymer Polymers 0.000 description 16
- 238000002955 isolation Methods 0.000 description 15
- 230000008859 change Effects 0.000 description 8
- 229910052751 metal Inorganic materials 0.000 description 7
- 239000002184 metal Substances 0.000 description 7
- 230000015572 biosynthetic process Effects 0.000 description 6
- 230000035515 penetration Effects 0.000 description 6
- 230000008569 process Effects 0.000 description 6
- 238000010586 diagram Methods 0.000 description 5
- 230000003287 optical effect Effects 0.000 description 5
- 230000000694 effects Effects 0.000 description 4
- 238000010992 reflux Methods 0.000 description 4
- 238000002834 transmittance Methods 0.000 description 4
- 238000005530 etching Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 229910052732 germanium Inorganic materials 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- 239000012212 insulator Substances 0.000 description 2
- 238000002156 mixing Methods 0.000 description 2
- 230000000149 penetrating effect Effects 0.000 description 2
- 230000004044 response Effects 0.000 description 2
- 229910052710 silicon Inorganic materials 0.000 description 2
- 239000010703 silicon Substances 0.000 description 2
- SDLBJIZEEMKQKY-UHFFFAOYSA-M silver chlorate Chemical compound [Ag+].[O-]Cl(=O)=O SDLBJIZEEMKQKY-UHFFFAOYSA-M 0.000 description 2
- WKBOTKDWSSQWDR-UHFFFAOYSA-N Bromine atom Chemical compound [Br] WKBOTKDWSSQWDR-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 229910003978 SiClx Inorganic materials 0.000 description 1
- 229910000577 Silicon-germanium Inorganic materials 0.000 description 1
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- GDTBXPJZTBHREO-UHFFFAOYSA-N bromine Substances BrBr GDTBXPJZTBHREO-UHFFFAOYSA-N 0.000 description 1
- 229910052794 bromium Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 description 1
- 239000010931 gold Substances 0.000 description 1
- 229910052737 gold Inorganic materials 0.000 description 1
- 230000026030 halogenation Effects 0.000 description 1
- 238000005658 halogenation reaction Methods 0.000 description 1
- 229910052738 indium Inorganic materials 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 238000001259 photo etching Methods 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- ADZWSOLPGZMUMY-UHFFFAOYSA-M silver bromide Chemical compound [Ag]Br ADZWSOLPGZMUMY-UHFFFAOYSA-M 0.000 description 1
- 239000002023 wood Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
Abstract
It includes: semiconductor substrate that technical solution of the present invention, which discloses a kind of imaging sensor and its manufacturing method, described image sensor, and the photodiode of discrete arrangement is formed in the semiconductor substrate；Colour filter is located in the semiconductor substrate and corresponds to the photodiode；Lenticule is located on the colour filter, mixed with sensitization discoloration material in the lenticule.Technical solution of the present invention reduces light inlet in dark characteristic under strong light using changeable colour lenticule, so as to improve the overexposure phenomenon of image, improves the performance of imaging sensor.
Description
Technical field
The present invention relates to field of semiconductor manufacture more particularly to a kind of imaging sensor and its manufacturing methods.
Background technique
Imaging sensor receives optical signal from object and converts optical signal into electric signal, and then electric signal can be transmitted
For further handling, such as digitizes, then stored in such as memory device of memory, CD or disk, or use
In display over the display, printing etc..Imaging sensor is commonly used in such as digital camera, video camera, smart phone, scanning
The equipment such as instrument, facsimile machine.
Imaging sensor has standard responding range, when incident light intensity is in the standard dynamic of imaging sensor
When within response range, imaging sensor being capable of normal imaging.If the light intensity for being incident on imaging sensor is passed higher than image
The maximum value of sensor standard responding range, then image will appear overexposure phenomenon, thus influence the performance of imaging sensor,
And user experience is bad.
Summary of the invention
When technical solution of the present invention technical problems to be solved are the imagings of existing imaging sensor, incident ray intensity is too
It will cause overexposure phenomenon greatly.
In order to solve the above technical problems, technical solution of the present invention provides a kind of imaging sensor, comprising: semiconductor substrate,
The photodiode of discrete arrangement is formed in the semiconductor substrate；Colour filter is located in the semiconductor substrate and corresponding
In the photodiode；Lenticule is located on the colour filter, mixed with sensitization discoloration material in the lenticule.
Optionally, the content of the sensitization discoloration material is according to the responding range of imaging sensor and light intensity
Relationship and determine.
Optionally, the lenticule is by the lens material mixed with sensitizing powder, the resin material mixed with pyrrole loop coil or halogenation
Silver-colored photosensitive material is formed.
Optionally, the lenticule includes lens jacket and the photochromic layer for covering the lens jacket, the photochromic layer by mixed with
The lens material of sensitizing powder is formed mixed with the resin material or photosensitive silve halide material of pyrrole loop coil.
Optionally, the content of sensitizing powder is 0.8%~3% in the lens material.
Optionally, also mixed with light stabilizer and antioxidant in the lens material.
Optionally, in the lens material content of light stabilizer and antioxidant be sensitizing powder content 0.5 times~5
Times.
Optionally, the thickness range of the photochromic layer is 40nm~80nm.
Optionally, light penetration reduces by 5%~10% when the lenticule changes colour.
In order to solve the above technical problems, technical solution of the present invention also provides a kind of manufacturing method of imaging sensor, comprising:
Semiconductor substrate is provided, the photodiode of discrete arrangement is formed in the semiconductor substrate；On the semiconductor substrate
Colour filter is formed, the colour filter corresponds to the photodiode；Lenticule, the lenticule are formed on the colour filter
In mixed with sensitization discoloration material.
Optionally, forming the lenticule includes: to use mixed with the lens material of sensitizing powder, mixed with the resinous wood of pyrrole loop coil
Material or photosensitive silve halide material form the lenticule.
Optionally, forming the lenticule includes: that lens jacket and the covering lens jacket are formed on the colour filter
Photochromic layer, the photochromic layer by mixed with sensitizing powder lens material, mixed with the resin material or light-sensitive silver halide material of pyrrole loop coil
Material is formed.
Optionally, also mixed with light stabilizer and antioxidant in the lens material.
Compared with prior art, technical solution of the present invention has the advantages that
The characteristic to be changed colour under strong light using sensitization discoloration material makes the lenticule mixed with sensitization discoloration material in intense light irradiation
Light transmission rate is reduced in dark color when penetrating, that is, the amount light of entrance is reduced, so as to improve the overexposure phenomenon of image.In normal light
Or lenticule transparent color when low light irradiation, so that light is normal through thus the not normal exposure of influence diagram picture.
Using the lens material mixed with sensitization discoloration material, routinely technique directly forms the lenticule of changeable colour, alternatively,
Routinely technique forms the photochromic layer mixed with sensitization discoloration material on existing lenticule, and formation process is simple and is easy to real
It is existing, and will not influence the manufacturing process of whole image sensor.
Detailed description of the invention
Fig. 1 to Fig. 3 is the corresponding structural schematic diagram of each step of manufacturing method of the imaging sensor of the embodiment of the present invention one；
Fig. 4 and Fig. 5 is state of the lenticule of the imaging sensor of the embodiment of the present invention one under the conditions of different light irradiate
Schematic diagram；
The corresponding structural schematic diagram of the step of Fig. 6 is the manufacturing method of the imaging sensor of the embodiment of the present invention two；
Fig. 7 and Fig. 8 is state of the lenticule of the imaging sensor of the embodiment of the present invention two under the conditions of different light irradiate
Schematic diagram.
Specific embodiment
Existing imaging sensor includes at least sensor devices (such as photodiode), colour filter and lenticule, light
Successively through being received after lenticule and colour filter by photodiode, photodiode is converted light into as electric signal.However work as to enter
The light intensity for penetrating light is excessive, and image may will appear overexposure phenomenon.In order to solve the above technical problems, inventor proposes one
Kind has the imaging sensor of discoloration lenticule, is in dark color in the case where strong light is incident to reduce light transmission rate using discoloration lenticule,
The amount light of entrance is reduced, so as to improve overexposure phenomenon.Therefore, the imaging sensor of technical solution of the present invention at least wraps
Include: semiconductor substrate is formed with the photodiode of discrete arrangement in the semiconductor substrate；Colour filter is partly led positioned at described
In body substrate and correspond to the photodiode；Lenticule is located on the colour filter, mixed with photosensitive change in the lenticule
Color material.
With reference to the accompanying drawings and examples, to the image sensing of technical solution of the present invention by taking back side illumination image sensor as an example
Device and its manufacturing method are described in detail.
Embodiment one
Referring to FIG. 1, providing semiconductor substrate 10, two pole of photoelectricity of discrete arrangement is formed in the semiconductor substrate 10
Pipe 11.
Semiconductor substrate 10 can be silicon substrate, alternatively, the material of semiconductor substrate 10 may be germanium, SiGe, carbon
SiClx, GaAs or gallium indium, semiconductor substrate 10 can also be the germanium substrate on the silicon substrate or insulator on insulator,
Either grow the substrate for having epitaxial layer.
Photodiode 11 is used as sensor devices, for the optical signal received to be converted to electric signal.In order to meet half
The requirement of the overall thickness thinning of conductor substrate 10, usual position of each photodiode 11 in semiconductor substrate 10 is substantially
In same depth.
Further, it as shown in Figure 1, being isolated between photodiode 11 by deep trench isolation structure (DTI) 12, avoids
The problem of photo-generated carrier diffusion occurs between different pixels.Fleet plough groove isolation structure is also formed in semiconductor substrate 10
(STI) 13, position is corresponding with deep trench isolation structure (DTI) 12, for the device being formed in semiconductor substrate 10 to be isolated
Structure (not shown).
Semiconductor substrate 10 has opposite first surface 10a and second surface 10b, and colour filter and lenticule are formed in
On the first surface 10a of semiconductor substrate 10.Metal interconnecting layer 21 is formed on the second surface 10b of semiconductor substrate 10, gold
Belong in interconnection layer 21 and is formed with metal interconnection structure 21a.Semiconductor substrate 10 can be bonded by metal interconnecting layer 21
(bonding) on slide glass (Carrier Wafer) 40.
With continued reference to FIG. 2, forming colour filter (Color Filter) 36, the colour filter in the semiconductor substrate 10
Piece 36 corresponds to the photodiode 11.
In the specific implementation, antireflection (ARC) layer first can be sequentially formed in the first surface 10a of semiconductor substrate 10
31, high dielectric constant (High-K) material layer 32 and medium (Dielectric) layer 33.Then, colour filter is formed on dielectric layer 33
Piece isolation structure (CFI) and colour filter 36.
The material of the colour filter isolation structure can be the material with buffer action or interception, the colour filter
Isolation structure for stopping incident light avoids that optical crosstalk occurs and influences imaging effect.In the present embodiment, the colour filter every
Include the side wall of metal grate (Metal Grid) 34 and cladding institute's metal grate 34 and the protection medium 35 at top from structure, protects
The effect for protecting medium 35 is to prevent the metallics in metal grate 34 from diffusing into colour filter 36, to influence image sensing
The performance of device.
Colour filter 36 is formed between colour filter isolation structure, and the top of colour filter 36 and the colour filter isolation structure
Top surface flushes.The colour filter isolation structure distributes as net shape, and each colour filter 36 is arranged in array.The colour filter 36 can be with
Including red color filter, green color filter and blue color filter.And corresponds on each photodiode 11 and only form one kind
Then the colour filter 36 of color then can be irradiated to light by a kind of colour filter colour filter of color into the incident light of colour filter 36
The incident light on 11 surface of electric diode is monochromatic light, and the photodiode 11 absorbs monochromatic light, converts optical signals to telecommunications
Number.
With continued reference to FIG. 3, lenticule 37 is formed on the colour filter 36, mixed with sensitization discoloration in the lenticule 37
Material 37a.
Lenticule 37 corresponds to colour filter 36, a lenticule 37 is formed on each colour filter 36, since colour filter 36 is in
Array arrangement, accordingly, lenticule 37 are also arranged in array.Lenticule 37 makes for focusing incident light by lenticule 37
Incident light can be irradiated on photodiode 11 corresponding to the lenticule 37.
In the present embodiment, formed the lenticule 37 include: using mixed with sensitization discoloration material lens material formed it is micro-
Lens.The lens material mixed with sensitization discoloration material can be (such as transparent for the lens material mixed with sensitizing powder (OP powder)
Resin).Specifically, forming lenticule 37 may include: to deposit on colour filter 36 and colour filter isolation structure mixed with OP powder
Lens material forms lens material layer；Photoresist layer is formed on the lens material layer；The photoresist layer is exposed
Development, forms spaced lenticule figure；Using the photoresist layer as exposure mask, along lens material described in lenticule pattern etching
The bed of material forms spaced lenticule 37 to colour filter isolation structure is exposed；Using reflux technique, keep 37 surface of lenticule convex
It rises.It in other embodiments, can be by using the mask plate with gradual change light transmittance, so that the photoresist after exposure has not
Same thickness is realized to the etch quantity at lenticule 37 edge and center different-thickness during subsequent etch, is consequently formed
The lenticule 37 of surface bulge.
Illustrate state of the lenticule of the present embodiment imaging sensor when different light irradiate below with reference to Fig. 4 and Fig. 5.It is purple
Outside line is divided into three kinds by different-waveband: it is UVC that wavelength is below in 250nm, and wavelength is UVB within 250nm~320nm,
Wavelength is UVA within 320nm~380nm.The wave-length coverage of visible light is in 380nm~800nm, the wave-length coverage of infrared light
For 900nm~1800nm.The phototropic principle of OP powder is: opening light sensitive molecule key using the energy of UVA, makes it from low energy rank
Jump to high energy rank.Visible light is jumped to from black light, to generate the variation of color.It is photosensitive when losing ultraviolet light irradiation
Molecular link is closed, that is, is returned to original color.
As shown in figure 4, due to the effect of the UVA of ultraviolet light, lenticule 37 becomes under strong light (Bright Light) irradiation
Color and in dark (such as grey or grey black), block some light entrance, that is, reduce the amount light of entrance so that
The amount light for being irradiated to photodiode 11 decreases, and thus just reduces the overexposure phenomenon of image.As shown in figure 5,
Under normal light (Normal Light) or low light irradiation, the transparent color of lenticule 37, light penetrates lenticule 37 and colour filter 36
It is irradiated to photodiode 11, will not influence the normal exposure of image.In the present embodiment, the light when lenticule 37 changes colour
Transmitance reduces by 5%~10%, that is to say, that the light penetration of the lenticule 37 is normal light or dim light under strong illumination
The 90%~95% of the light penetration of the lenticule 37 under irradiation.Normal light described in the present embodiment or dim light refer to light
Light of the intensity in the responding range of imaging sensor, strong light refer to that light intensity is higher than the dynamic response of imaging sensor
The light of the maximum value of range.
It should be noted that the present embodiment is illustrated for forming lenticule mixed with the lens material of sensitizing powder,
But it is not limited to this, can also be using the resin material or silver halide (such as silver chlorate, silver bromide etc.) mixed with pyrrole loop coil
Photosensitive material forms lenticule.
Wherein, the content of sensitization discoloration material can be according to the responding range and light of imaging sensor in lenticule
The relationship of intensity and determine.In general, the light intensity when incident light is stronger, in order to reduce overexposure phenomenon, sensitization discoloration material
Doping should be more.For mixing OP powder in lens material, the content of sensitizing powder can be in the lens material
0.8%~3%, sensitizing powder is evenly distributed in the lens material.In addition, when mixing OP powder in lens material, the lens
It can also be mixed with light stabilizer and antioxidant in material.In general, light stabilizer and antioxidant contain in the lens material
Amount can be 0.5 times~5 times of the content of sensitizing powder.
The present embodiment uses the lens material mixed with sensitization discoloration material, utilizes the conventional direct shape of lenticule formation process
At the lenticule of changeable colour, formation process is simple and is easily achieved, and does not influence the manufacturing process of imaging sensor.
Embodiment two
The manufacturing method of the imaging sensor of the present embodiment forms the step of lenticule different from embodiment one, is formed micro-
Step before mirror can be in conjunction with the explanation of Fig. 1 and Fig. 2 reference implementation example one.
Referring to FIG. 6, lenticule 47 is formed on the colour filter 36, mixed with sensitization discoloration material in the lenticule 47
47a。
Lenticule 47 corresponds to colour filter 36, a lenticule 47 is formed on each colour filter 36, since colour filter 36 is in
Array arrangement, accordingly, lenticule 47 are also arranged in array.Lenticule 37 makes for focusing incident light by lenticule 47
Incident light can be irradiated on photodiode 11 corresponding to the lenticule 47.
In the present embodiment, forming the lenticule 47 includes: that lens jacket 47b and covering institute are formed on the colour filter 36
It states in the photochromic layer 47c, the photochromic layer 47c of lens jacket mixed with sensitization discoloration material 47a.
Lens jacket 47b first can be formed using lens material, then be formed using the lens material mixed with sensitization discoloration material
Photochromic layer 47c.The lens material mixed with sensitization discoloration material can for mixed with sensitizing powder (OP powder) lens material (such as
Transparent resin).
Specifically, forming lens jacket 47b may include: the deposition of lens material on colour filter 36 and colour filter isolation structure
Form lens material layer；Photoresist layer is formed on the lens material layer；Development is exposed to the photoresist layer, is formed
Spaced lenticule figure；Using the photoresist layer as exposure mask, along lens material layer described in lenticule pattern etching to dew
Colour filter isolation structure out forms spaced lens jacket 47b；Using reflux technique, make lens jacket 47b surface bulge.?
It, can be by using the mask plate with gradual change light transmittance, so that the photoresist after exposure is with different in other embodiments
Thickness is realized to the etch quantity at the edge lens jacket 47b and center different-thickness during subsequent etch, surface is consequently formed
The lens jacket 47b of protrusion.
Forming photochromic layer 47c may include: the lens material formation off-color material deposited on lens jacket 47b mixed with OP powder
Layer；Photoresist layer is formed on the discoloration material layer；Development is exposed to the photoresist layer, is formed spaced micro-
Lens figure；Using the photoresist layer as exposure mask, along discoloration material layer described in lenticule pattern etching, spaced change is formed
Chromatograph 47c；Using reflux technique, make photochromic layer 47c surface bulge.It in other embodiments, can be by using with gradual change
The mask plate of light transmittance is realized during subsequent etch to discoloration so that the photoresist after exposure has different thickness
The etch quantity at the layer edge 47c and center different-thickness, is consequently formed the photochromic layer 47c of surface bulge.
Lens jacket 47b and photochromic layer 47c can also be formed by a photoetching process.Specifically, the lenticule is formed
47 may include: lens material to be sequentially depositing on colour filter 36 and colour filter isolation structure and mixed with sensitization discoloration material 47a
Lens material, form lens material layer and discoloration material layer；Photoresist layer is formed on the discoloration material layer；To the light
Photoresist layer is exposed development, forms spaced lenticule figure；Using the photoresist layer as exposure mask, along lenticule figure
The discoloration material layer and lens material layer are sequentially etched to colour filter isolation structure is exposed, forms spaced photochromic layer
47c and lens jacket 47b；Using reflux technique, make photochromic layer 47c and lens jacket 47b surface bulge, thus constitutes surface bulge
Lenticule 47.It in other embodiments, can be by using the mask plate with gradual change light transmittance, so that the photoresist after exposure
With different thickness, realize during subsequent etch to photochromic layer 47c and the edge lens jacket 47b and center different-thickness
Etch quantity, the photochromic layer 47c and lens jacket 47b of surface bulge is consequently formed.
In the present embodiment, the photochromic layer 47c being covered on lens jacket 47b has uniform thickness, the thickness of the photochromic layer 47c
Degree may range from 40nm~80nm.
Illustrate state of the lenticule of the present embodiment imaging sensor when different light irradiate below with reference to Fig. 7 and Fig. 8.Such as
Shown in Fig. 7, under strong light (Bright Light) irradiation, due to the effect of the UVA of ultraviolet light, the photochromic layer 47c of lenticule 47
Change colour in dark (such as grey or grey black), block some light entrance, that is, reduce the amount light of entrance, makes
The amount light that photodiode 11 must be irradiated to decreases, and thus just reduces the overexposure phenomenon of image.As shown in figure 8,
Under normal light (Normal Light) or low light irradiation, the transparent color of lens jacket 47b and photochromic layer 47c of lenticule 47,
Light is irradiated to photodiode 11 through lenticule 47 and colour filter 36, will not influence the normal exposure of image.In this implementation
In example, light penetration reduces by 5%~10% when the lenticule 47 changes colour, that is to say, that the lenticule under strong illumination
47 light penetration is 90%~95% of the light penetration of the lenticule 47 under normal light or low light irradiation.This implementation
Normal light described in example or dim light refer to that light of the light intensity in the responding range of imaging sensor, strong light refer to light
Intensity is higher than the light of the maximum value of the responding range of imaging sensor.
It should be noted that the present embodiment be by mixed with the lens material of sensitizing powder formed lenticule photochromic layer for into
Row explanation, but it is not limited to this, can also be using resin material or silver halide (such as the silver chlorate, bromine mixed with pyrrole loop coil
Change silver etc.) photosensitive material forms the photochromic layer of lenticule.Wherein, the content of sensitization discoloration material can be according to image in photochromic layer
The responding range of sensor and the relationship of light intensity and determine.In general, the light intensity when incident light is stronger, in order to subtract
Few overexposure phenomenon, the material doped amount of sensitization discoloration should be more.
The present embodiment covers the photochromic layer mixed with sensitization discoloration material on existing lenticule, can use conventional micro-
Mirror formation process forms the photochromic layer, and formation process is simple and is easily achieved, and will not influence the system of imaging sensor
Make technique.
Although the present invention discloses as above in a preferred embodiment thereof, it is not for limiting the present invention, any ability
Field technique personnel without departing from the spirit and scope of the present invention, may be by the methods and technical content of the disclosure above to this
Inventive technique scheme makes possible variation and modification, therefore, anything that does not depart from the technical scheme of the invention, according to this hair
Bright technical spirit belongs to the technology of the present invention to any simple modifications, equivalents, and modifications made by embodiment of above
The protection scope of scheme.
Claims (13)
1. a kind of imaging sensor characterized by comprising
Semiconductor substrate is formed with the photodiode of discrete arrangement in the semiconductor substrate；
Colour filter is located in the semiconductor substrate and corresponds to the photodiode；
Lenticule is located on the colour filter, mixed with sensitization discoloration material in the lenticule.
2. imaging sensor as described in claim 1, which is characterized in that the content of the sensitization discoloration material is passed according to image
The responding range of sensor and the relationship of light intensity and determine.
3. imaging sensor as described in claim 1, which is characterized in that the lenticule is by the lens material mixed with sensitizing powder
Material is formed mixed with the resin material or photosensitive silve halide material of pyrrole loop coil.
4. imaging sensor as described in claim 1, which is characterized in that the lenticule includes lens jacket and covers described
The photochromic layer of mirror layer, the photochromic layer by mixed with sensitizing powder lens material, mixed with the resin material or silver halide of pyrrole loop coil
Photosensitive material is formed.
5. imaging sensor as described in claim 3 or 4, which is characterized in that the content of sensitizing powder is in the lens material
0.8%~3%.
6. imaging sensor as claimed in claim 5, which is characterized in that also mixed with light stabilizer and anti-in the lens material
Oxidant.
7. imaging sensor as claimed in claim 6, which is characterized in that light stabilizer and antioxidant in the lens material
Content be 0.5 times~5 times of content of sensitizing powder.
8. imaging sensor as claimed in claim 4, which is characterized in that the thickness range of the photochromic layer be 40nm~
80nm。
9. imaging sensor as claimed in any one of claims 1 to 8, which is characterized in that light is saturating when the lenticule changes colour
Crossing rate reduces by 5%~10%.
10. a kind of manufacturing method of imaging sensor characterized by comprising
Semiconductor substrate is provided, the photodiode of discrete arrangement is formed in the semiconductor substrate；
Colour filter is formed on the semiconductor substrate, and the colour filter corresponds to the photodiode；
Lenticule is formed on the colour filter, mixed with sensitization discoloration material in the lenticule.
11. the manufacturing method of imaging sensor as claimed in claim 10, which is characterized in that forming the lenticule includes:
Using mixed with sensitizing powder lens material, mixed with pyrrole loop coil resin material or photosensitive silve halide material formed it is described micro-
Mirror.
12. the manufacturing method of imaging sensor as claimed in claim 10, which is characterized in that forming the lenticule includes:
Lens jacket is formed on the colour filter and covers the photochromic layer of the lens jacket, and the photochromic layer is by the lens mixed with sensitizing powder
Material is formed mixed with the resin material or photosensitive silve halide material of pyrrole loop coil.
13. the manufacturing method of the imaging sensor as described in claim 11 or 12, which is characterized in that in the lens material also
Mixed with light stabilizer and antioxidant.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811407379.2A CN109616486A (en) | 2018-11-23 | 2018-11-23 | Imaging sensor and its manufacturing method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811407379.2A CN109616486A (en) | 2018-11-23 | 2018-11-23 | Imaging sensor and its manufacturing method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN109616486A true CN109616486A (en) | 2019-04-12 |
Family
ID=66003469
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811407379.2A Pending CN109616486A (en) | 2018-11-23 | 2018-11-23 | Imaging sensor and its manufacturing method |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN109616486A (en) |
Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110034145A (en) * | 2019-04-23 | 2019-07-19 | 德淮半导体有限公司 | Imaging sensor and forming method thereof |
| CN110265418A (en) * | 2019-06-13 | 2019-09-20 | 德淮半导体有限公司 | Semiconductor devices and forming method thereof |
| CN111128036A (en) * | 2019-10-23 | 2020-05-08 | 中国电子科技集团公司第五十五研究所 | Method for improving brightness uniformity of self-luminous display device |
| CN112466898A (en) * | 2019-09-06 | 2021-03-09 | 豪威科技股份有限公司 | Image sensor with reduced petal flare |
Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6137634A (en) * | 1999-02-01 | 2000-10-24 | Intel Corporation | Microlens array |
| KR20050051268A (en) * | 2003-11-27 | 2005-06-01 | 매그나칩 반도체 유한회사 | Method for manufacturing a image sensor |
| KR20100030734A (en) * | 2008-09-11 | 2010-03-19 | 주식회사 동부하이텍 | Method of manufacturing cmos image sensor |
| US20120025061A1 (en) * | 2010-07-30 | 2012-02-02 | Sony Corporation | Solid-state imaging device, driving method thereof and electronic apparatus |
| CN103268881A (en) * | 2013-05-28 | 2013-08-28 | 北京思比科微电子技术股份有限公司 | Image sensor with high dynamic range |
| US20130329105A1 (en) * | 2012-06-11 | 2013-12-12 | Sony Corporation | Imaging device |
| JP2016225392A (en) * | 2015-05-28 | 2016-12-28 | 凸版印刷株式会社 | Microlens for solid state imaging device and formation method of microlens for solid state imaging device |
-
2018
- 2018-11-23 CN CN201811407379.2A patent/CN109616486A/en active Pending
Patent Citations (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6137634A (en) * | 1999-02-01 | 2000-10-24 | Intel Corporation | Microlens array |
| KR20050051268A (en) * | 2003-11-27 | 2005-06-01 | 매그나칩 반도체 유한회사 | Method for manufacturing a image sensor |
| KR20100030734A (en) * | 2008-09-11 | 2010-03-19 | 주식회사 동부하이텍 | Method of manufacturing cmos image sensor |
| US20120025061A1 (en) * | 2010-07-30 | 2012-02-02 | Sony Corporation | Solid-state imaging device, driving method thereof and electronic apparatus |
| US20130329105A1 (en) * | 2012-06-11 | 2013-12-12 | Sony Corporation | Imaging device |
| CN103268881A (en) * | 2013-05-28 | 2013-08-28 | 北京思比科微电子技术股份有限公司 | Image sensor with high dynamic range |
| JP2016225392A (en) * | 2015-05-28 | 2016-12-28 | 凸版印刷株式会社 | Microlens for solid state imaging device and formation method of microlens for solid state imaging device |
Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110034145A (en) * | 2019-04-23 | 2019-07-19 | 德淮半导体有限公司 | Imaging sensor and forming method thereof |
| CN110034145B (en) * | 2019-04-23 | 2021-09-14 | 德淮半导体有限公司 | Image sensor and forming method thereof |
| CN110265418A (en) * | 2019-06-13 | 2019-09-20 | 德淮半导体有限公司 | Semiconductor devices and forming method thereof |
| CN112466898A (en) * | 2019-09-06 | 2021-03-09 | 豪威科技股份有限公司 | Image sensor with reduced petal flare |
| CN112466898B (en) * | 2019-09-06 | 2022-10-11 | 豪威科技股份有限公司 | Image sensor with reduced petal flare |
| CN111128036A (en) * | 2019-10-23 | 2020-05-08 | 中国电子科技集团公司第五十五研究所 | Method for improving brightness uniformity of self-luminous display device |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN109616486A (en) | Imaging sensor and its manufacturing method | |
| US7009772B2 (en) | High transmittance overcoat for microlens arrays in semiconductor color imagers | |
| US6876049B2 (en) | Colors only process to reduce package yield loss | |
| CN103137638B (en) | Solid-state imaging device and its manufacture method, electronic installation and the synthetic for solid-state imaging device | |
| CN100365820C (en) | Solid-state image sensor, manufacturing method for solid-state image sensor, and camera | |
| CN100472792C (en) | Solid state imaging device and method for producing the same | |
| KR20070061530A (en) | Solid-state image sensor | |
| CN103681710B (en) | Imaging sensor, imaging device and the device and method for manufacturing imaging sensor | |
| CN105393356A (en) | Solid state image sensor, method of manufacturing the same, and electronic device | |
| CN101887900A (en) | Two-dimensional solid-state image capture device and polarization-light data processing method thereof | |
| TW201104852A (en) | Solid-state imaging device, method of manufacturing the same, and electronic apparatus | |
| CN109273469A (en) | Imaging sensor and forming method thereof | |
| CN108269815A (en) | Cmos image sensor and forming method thereof | |
| US6548833B1 (en) | Color-optimized pixel array design | |
| CN212343888U (en) | Image sensor and electronic equipment | |
| CN102214610A (en) | High full-well capacity pixel with graded photodetector implant | |
| TWI771850B (en) | Image sensor with partially encapsulating attenuation layer | |
| CN100470815C (en) | Solid-state image sensor | |
| KR20080058549A (en) | Image sensor and method of manufacturing image sensor | |
| TW201104856A (en) | Solid-state imaging device, camera, electronic apparatus, and method for manufacturing solid-state imaging device | |
| CN109616487A (en) | Back side illumination image sensor and its manufacturing method | |
| KR100829378B1 (en) | Image sensor and method of manufactruing the same | |
| CN100590879C (en) | Backside illuminated sensing device and method for manufacturing same | |
| US10134791B1 (en) | Backside illumination global shutter sensor and pixel thereof | |
| US20200075651A1 (en) | Double-layer color filter and method for forming the same |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| TA01 | Transfer of patent application right |
Effective date of registration: 20230714 Address after: 223001 Room 318, Building 6, east of Zhenda Steel Pipe Company, south of Qianjiang Road, Huaiyin District, Huai'an City, Jiangsu Province Applicant after: Huaian Xide Industrial Design Co.,Ltd. Address before: 223300 no.599, East Changjiang Road, Huaiyin District, Huai'an City, Jiangsu Province Applicant before: HUAIAN IMAGING DEVICE MANUFACTURER Corp. |
|
| TA01 | Transfer of patent application right |