CN108269815A - Cmos image sensor and forming method thereof - Google Patents
Cmos image sensor and forming method thereof Download PDFInfo
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- CN108269815A CN108269815A CN201810024081.7A CN201810024081A CN108269815A CN 108269815 A CN108269815 A CN 108269815A CN 201810024081 A CN201810024081 A CN 201810024081A CN 108269815 A CN108269815 A CN 108269815A
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- 238000001259 photo etching Methods 0.000 claims description 6
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- 229910052581 Si3N4 Inorganic materials 0.000 claims description 5
- 238000011049 filling Methods 0.000 claims description 5
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- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 5
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- 239000000758 substrate Substances 0.000 description 7
- 238000010586 diagram Methods 0.000 description 6
- 206010034960 Photophobia Diseases 0.000 description 5
- 208000013469 light sensitivity Diseases 0.000 description 5
- 238000003384 imaging method Methods 0.000 description 3
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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- Condensed Matter Physics & Semiconductors (AREA)
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Abstract
Technical solution of the present invention discloses a kind of cmos image sensor and forming method thereof, and the cmos image sensor includes：Basal layer, including multiple photoelectric devices；Metal interconnecting layer, on the basal layer；Multiple spaced lenticules on the metal interconnecting layer and correspond respectively to the multiple photoelectric device；Multiple colour filters, it is corresponding to cover the multiple lenticule；Spacer medium fills the interval between the lenticule, and the thickness of the spacer medium is greater than or equal to the sum of the height of the lenticule and the thickness of colour filter, and the refractive index of the spacer medium is less than the refractive index of the colour filter.Technical solution of the present invention improves the fill factor of cmos image sensor, reduces the crosstalk of light, which thereby enhances the optical property of cmos image sensor.
Description
Technical field
The invention belongs to technical field of semiconductor device, and in particular to cmos image sensor and forming method thereof.
Background technology
Imaging sensor is divided into charge coupling device (CCD, Charge-coupled Device) and complementary metal oxide
Semiconductor image sensor (CIS, CMOS Image Sensor), compared with CCD, CIS have more easily drive mode and
It can realize various scan types.Cause miniaturization CIS becomes can moreover, signal processing circuit is integrated into one single chip
Energy.In addition, by using CMOS technology compatible extensively, CIS contributes to lower power consumption and reduces manufacture cost.Thus, CIS
With wider application.
In order to enhance the light sensitivity of CIS, a kind of technology can improve the fill factor (FF, fill factor) of CIS,
Fill factor is defined as the entire area ratio of photodiode (PD, photodiode) area and imaging sensor.It is another
Technology is to change the path for the light for being incident on the region for not being photodiode, to focus the light into the technology of photodiode.
The exemplary of focusing technology includes lenticule (ML, microlens) formation.It is raised in lenticule is formed
Lenticule is formed by the excellent light transmitting material on photodiode so that can direct light to light by reflecting incident light
Photodiode region.
Fig. 1 is the structure diagram of existing CIS a kind of, and shown CIS includes：There is basal layer 10 photosensitive area (not mark
Show)；Photodiode 102, positioned at the photosensitive area of basal layer 10；Metal interconnecting layer 11, on basal layer 10, colour filter 12,
On metal interconnecting layer 11；Lenticule 13, on colour filter 12, and it is corresponding with the photodiode 102 positioned at photosensitive area.
Invention content
Technical solution of the present invention technical problems to be solved are to provide a kind of cmos image sensor and forming method thereof, with
Improve the light sensitivity of CIS.
In order to solve the above technical problems, technical solution of the present invention provides a kind of cmos image sensor, including：Basal layer,
Including multiple photoelectric devices；Metal interconnecting layer, on the basal layer；Multiple spaced lenticules, positioned at the gold
Belong on interconnection layer and correspond respectively to the multiple photoelectric device；Multiple colour filters, it is corresponding to cover the multiple lenticule；Isolation
Medium, fills the interval between the lenticule, the thickness of the spacer medium be greater than or equal to the lenticule height and
The sum of thickness of colour filter, the refractive index of the spacer medium are less than the refractive index of the colour filter.
Optionally, the thickness range of the colour filter at the top of the lenticule is 500nm to 700nm.
Optionally, the colour filter on the lenticule has uniform thickness.
Optionally, the altitude range of the lenticule is 1 μm to 2.5 μm.
Optionally, the width of the spacer medium is less than or equal to 400nm.
Optionally, the material of the spacer medium is oxide, silicon nitride or organic material.
In order to solve the above technical problems, technical solution of the present invention also provides a kind of forming method of cmos image sensor,
Including：Basal layer is provided, the basal layer includes multiple photoelectric devices；Metal interconnecting layer is formed on the basal layer；Institute
It states and multiple spaced lenticules is formed on metal interconnecting layer, the multiple lenticule corresponds respectively to the multiple phototube
Part；Form the colour filter of multiple covering lenticules；Interval filling spacer medium between each lenticule, the isolation
The thickness of medium is greater than or equal to the sum of the height of the lenticule and the thickness of colour filter, and the refractive index of the spacer medium is small
In the refractive index of the colour filter.
Optionally, the forming method of the cmos image sensor, which is characterized in that further include：Adjust the lenticule
On colour filter thickness, form colour filter in homogeneous thickness.
Optionally, using reflux technique, colour filter in homogeneous thickness is formed.
Optionally, using photoetching process, colour filter in homogeneous thickness is formed, wherein, the photoetching process, which uses, to be had gradually
Become the mask plate of light transmittance, so that the photoresist after exposure has different thickness.
Compared with prior art, technical solution of the present invention has the advantages that：
Colour filter (CF, color filter) is on lenticule, the reduction of the distance between lenticule and photoelectric device
, therefore, the fill factor of cmos image sensor improves, and which thereby enhances the light sensitivity of cmos image sensor.
The spacer medium compared with low-refraction is increased between lenticule and between colour filter, reduces the string of light
It disturbs, which thereby enhances the optical property of cmos image sensor.
Since micro-lens surface protrudes, the color filter thickness being formed on lenticule is uneven, passes through reflux technique or light
Color filter thickness on carving technology control lenticule so that the colour filter being covered on lenticule has uniform thickness, effectively
It solves the problems, such as to influence spectral characteristic due to color filter thickness is uneven.
Description of the drawings
Fig. 1 is the cross section structure schematic diagram of existing CIS a kind of；
Fig. 2 is the cross section structure schematic diagram of the CIS of the embodiment of the present invention；
Fig. 3 to Fig. 8 is the corresponding cross section structure schematic diagram of each step of CIS forming methods of the embodiment of the present invention.
Specific embodiment
In CIS structures, and not all incident light can be arrived all by photodiode collection, as shown in Figure 1, incident
The light maximum incident angle Φ ≈ n (d/2s) that luminous energy is collected by photodiode 102, wherein, n is the refractive index of lenticule, and d is
The width of photodiode 102, s are the distance between photodiode 102 and lenticule 13.It is it follows that micro- by increasing
The refractive index n of lens, the width d of photodiode or reduce the distance between photodiode and lenticule s and improve light
Line use ratio, increase incident optical energy are reached by the value of the light maximum incident angle Φ of photodiode collection and are improved CIS's
Fill factor enhances the purpose of the light sensitivity of CIS.
The embodiment of the present invention is by changing the positional structure of lenticule and color filter layer, and in the base for changing positional structure
Increase spacer medium on plinth, alternatively referred to as colour filter isolation (CFI, color filter insolation) reduces light with this
Crosstalk (cross talk).Fig. 2 is the structure diagram of the CIS of the embodiment of the present invention, as shown in the figure, the CIS of the present embodiment
Including：Basal layer 20, including multiple photoelectric devices 202, photoelectric device 202 is located at the photosensitive area (not indicating) of basal layer 20, figure
In illustratively give 3 photoelectric devices 202；Metal interconnecting layer 21 on basal layer 20, includes metal interconnection structure
211；Multiple spaced lenticules 23 on metal interconnecting layer 21 and correspond respectively to multiple photoelectric devices 202；It is multiple
Colour filter 221, it is corresponding to cover multiple lenticules 23, lenticule 23 and the position of colour filter 221 and the position pair of photoelectric device 202
It should；Spacer medium 24, on metal interconnecting layer 21 and filling lenticule 23 between interval, spacer medium 24 thickness (or
Person says height) more than the height (peak of lenticule 23 to the distance of metal interconnecting layer 21) and colour filter 221 of lenticule 23
The sum of thickness, the refractive index of spacer medium 24 is less than the refractive index of colour filter 221.
In the present embodiment, the ranging from 500nm to 700nm of thickness h 1 of the colour filter 221 at 23 top of lenticule, and lenticule
Colour filter on 23 has uniform thickness.Spacer medium 24 is higher than 221 highest point midway of colour filter, with the height of lenticule 23
Ranging from 1 μm to 2.5 μm, the thickness of colour filter 221 is for 500nm, the thickness range of spacer medium 24 can be for 1.5 μm extremely
3μm.24 width of spacer medium should be narrow as possible, too wide to influence fill factor instead, and in general, the width of spacer medium 24 can be with
Less than or equal to 400nm.
The corresponding structure diagram of each step of CIS forming methods of the embodiment of the present invention as shown in Figures 3 to 8, below it is right
Each step is described in detail.
As shown in figure 3, provide basal layer 20.In the present embodiment, the basal layer 20 includes：Substrate (does not indicate), material
Expect for it is any can support photosensitive area formed material, such as can be silicon-on-insulator substrate (SOI substrate), quartz substrate,
Ceramic substrate, glass substrate；Form photoelectric device 202 (such as photodiode) on substrate and for imaging sensor
The devices such as transistor (not shown), to form the unit pixel of cmos image sensor.Region definition comprising photoelectric device 202
Photosensitive area for basal layer 20.The photoelectric device is suitable for receiving the light by lenticule, and the light of reception is converted into electricity
Signal.
As shown in figure 4, metal interconnecting layer 21 is formed on the basal layer 20.In the present embodiment, the metal interconnecting layer
21 can include：It is formed on the basal layer, using silica or silicon nitride etc. as the dielectric layer of material；It is formed in and is given an account of
Contact hole structure (not shown), the metal interconnection structure contacted in matter layer, with the transistors in unit pixel or other structures
211 etc., to realize the electric connection with external circuit or power supply.
As shown in figure 5, forming multiple lenticules 23 on metal interconnecting layer 21, there is interval between each lenticule 23,
Expose part metals interconnection layer 21.Multiple lenticules 23 can be arranged in array, and interval width should be narrow as possible, too wide shadow instead
Fill factor is rung, in the present embodiment, the interval width between each lenticule 23 is less than or equal to 400nm.
In the present embodiment, the step of forming multiple lenticule 23, can include：It is formed on the metal interconnecting layer 21 saturating
Mirror material (such as transparent resin) layer and photoresist layer；Development is exposed to the photoresist layer, is formed spaced micro-
Lens figure；It is mutual along lens material layer described in lenticule pattern etching to the metal is exposed using the photoresist layer as mask
Even layer 21, forms spaced lenticule 23；Using reflux technique, make 23 surface bulge of lenticule.The position of lenticule 23
Corresponding with the position of photoelectric device 202, the width of lenticule 23 is greater than or equal to the width of corresponding photoelectric device 202.At it
In his embodiment, when application photoetching process forms lenticule 23, by using the mask plate with gradual change light transmittance so that expose
Photoresist after light has different thickness, is realized during subsequent etch to 23 edge of lenticule and center different-thickness
Etch quantity, the lenticule 23 of surface bulge is consequently formed.
As shown in fig. 6, form the colour filter 220 of multiple covering lenticules 23.In the present embodiment, by exposing, showing
Shadow technique forms the colour filter 220 of covering lenticule 23 on each lenticule 23, and the material of colour filter 220 can be negativity
Photoresist, such as acrylic polymer.Multiple colour filters 220 can include the red color filter that selectivity penetrates red light wavelength
Piece, selectivity penetrate the blue color filter of blue light wavelength through the green color filter and selectivity of green wavelength.Multiple colour filters
220 are covered each by the upper surface that corresponding lenticule 23 protrudes, and the width of colour filter 220 is equal with the width of lenticule 23 or base
This is equal, and the upper surface flush of multiple colour filters 220.
As shown in fig. 7, the interval filling spacer medium 24 between each lenticule 23.In the prior art, when light elder generation
By lenticule 23, using colour filter 220, there are crosstalk phenomenons.And in the present invention program, light directly first passes through colour filter
220, crosstalk phenomenon is even more serious, therefore, it is necessary to be spaced apart each colour filter 220 by spacer medium 24, to solve light
Cross-interference issue.Since colour filter 220 is formed on lenticule 23, the thickness of spacer medium 24 should be greater than or equal to micro-
Colour filter 220 can be spaced apart by the sum of thickness of mirror 23 and colour filter 220.
The material of spacer medium 24 can be oxide, silicon nitride or organic material etc., spacer medium 24 should have compared with
Low-refraction (low n), spacer medium 24 are filled between the lenticule of unit pixel between colour filter, can be with reflective portion
The light of adjacent lenticule and colour filter is incident on, avoids the crosstalk of adjacent pixel incident light in this way.
Specifically, the refractive index of spacer medium 24 should be less than the refractive index of the colour filter, with the refraction of colour filter
For rate is 1.6, the refractive index of spacer medium 24 is less than 1.6.Material such as spacer medium 24 is oxide, refractive index one
As for 1.46, CIS light sensitivity and signal-to-noise ratio (S/N ratio) be significantly improved, chemical vapor deposition method may be used
Or interval fill oxide material of the spin coating proceeding between each lenticule 23.Material such as spacer medium 24 is organic material
Material, refractive index is generally 1.25, reaches optimality by adjusting the thickness of spacer medium 24 and the thickness of colour filter 220
Can, interval filling organic material of the chemical vapor deposition method between each lenticule 23 may be used.
Spacer medium 24 is higher than the highest point midway of colour filter 220 or the middle part of spacer medium 24 and colour filter 220
Peak flushes.Using the altitude range of lenticule 23 as 1 μm to 2.5 μm, for the thickness among colour filter 220 is 500nm, every
Thickness range from medium 24 can be 1.5 μm to 3 μm.
Further, the upper surface flush of multiple colour filters 220 shown in fig. 6, and lenticule 23 has the surface of protrusion, because
This thickness for being covered in the colour filter 220 on 23 surface of lenticule is non-uniform, the thickness of the colour filter 220 at 23 top of lenticule
It is less than the thickness of the colour filter 220 at 23 edge of lenticule.The in uneven thickness of colour filter 220 can influence spectral characteristic.With red
For color, ideally red free of losses, blue-green all filter, but practical is not to need to carry out the compromise choosing of thickness
It selects.In order to ensure the ability of color filtering, the thickness range of the colour filter 220 at 23 top of lenticule can be in 500nm extremely
700nm, but 220 thickness of colour filter at 23 edge of lenticule is thickening, and the color penetrated can be caused to have loss, therefore, control is micro-
Color filter thickness on lens 23 is uniform, can solve the problems, such as to influence spectral characteristic due to color filter thickness is uneven.
As shown in figure 8, the forming method of the CIS of the embodiment of the present invention can also include：Adjust the colour filter on lenticule 23
The thickness of piece 220 forms colour filter 221 in homogeneous thickness.Reflux technique may be used, make 220 surface of colour filter have with it is micro-
The identical protrusion in 23 surface of lens forms colour filter 221, the thickness of colour filter 221 at 23 top of lenticule and 23 side of lenticule
The thickness of the colour filter 221 of edge is equal or of substantially equal.The color filter thickness on photoetching process control lenticule can also be used,
So that the colour filter 221 being covered on lenticule has uniform thickness, specifically, in a lithographic process, using saturating with gradual change
The mask plate of light rate, so that the photoresist after exposure has different thickness, subsequently using photoresist as mask etching colour filter
The etch quantity to 220 edge of colour filter and center different-thickness is realized during piece 220, the colour filter of surface bulge is consequently formed
Piece 221.
Although the present invention discloses as above in a preferred embodiment thereof, it is not for limiting the present invention, any ability
Field technique personnel without departing from the spirit and scope of the present invention, may be by the methods and technical content of the disclosure above to this
Inventive technique scheme makes possible variation and modification, therefore, every content without departing from technical solution of the present invention, according to this hair
Any simple modifications, equivalents, and modifications that bright technical spirit makees embodiment of above, belong to the technology of the present invention
The protection domain of scheme.
Claims (14)
1. a kind of cmos image sensor, which is characterized in that including：
Basal layer, including multiple photoelectric devices；
Metal interconnecting layer, on the basal layer；
Multiple spaced lenticules on the metal interconnecting layer and correspond respectively to the multiple photoelectric device；
Multiple colour filters, it is corresponding to cover the multiple lenticule；
Spacer medium, fills the interval between the lenticule, and the thickness of the spacer medium is greater than or equal to the lenticule
Height and colour filter the sum of thickness, the refractive index of the spacer medium is less than the refractive index of the colour filter.
2. cmos image sensor as described in claim 1, which is characterized in that the thickness of the colour filter at the top of the lenticule
Ranging from 500nm to 700nm.
3. cmos image sensor as claimed in claim 1 or 2, which is characterized in that the colour filter on the lenticule has
Uniform thickness.
4. cmos image sensor as claimed in claim 1 or 2, which is characterized in that the altitude range of the lenticule is 1 μm
To 2.5 μm.
5. cmos image sensor as claimed in claim 1 or 2, which is characterized in that the width of the spacer medium be less than or
Equal to 400nm.
6. cmos image sensor as described in claim 1, which is characterized in that the material of the spacer medium includes oxidation
Object, silicon nitride or organic material.
7. a kind of forming method of cmos image sensor, which is characterized in that including：
Basal layer is provided, the basal layer includes multiple photoelectric devices；
Metal interconnecting layer is formed on the basal layer；
Multiple spaced lenticules are formed on the metal interconnecting layer, the multiple lenticule corresponds respectively to described more
A photoelectric device；
Form the colour filter of multiple covering lenticules；
Interval filling spacer medium between each lenticule, the thickness of the spacer medium are greater than or equal to the lenticule
Height and colour filter the sum of thickness, the refractive index of the spacer medium is less than the refractive index of the colour filter.
8. the forming method of cmos image sensor as claimed in claim 7, which is characterized in that the filter at the top of the lenticule
The thickness range of color chips is 500nm to 700nm.
9. the forming method of cmos image sensor as claimed in claim 7 or 8, which is characterized in that further include：Described in adjustment
The thickness of colour filter on lenticule forms colour filter in homogeneous thickness.
10. the forming method of cmos image sensor as claimed in claim 9, which is characterized in that using reflux technique, formed
Colour filter in homogeneous thickness.
11. the forming method of cmos image sensor as claimed in claim 9, which is characterized in that using photoetching process, formed
Colour filter in homogeneous thickness, wherein, the photoetching process uses the mask plate with gradual change light transmittance, so that the light after exposure
Photoresist has different thickness.
12. the forming method of cmos image sensor as claimed in claim 7, which is characterized in that the material of the spacer medium
Material includes oxide, silicon nitride or organic material.
13. the forming method of cmos image sensor as claimed in claim 7 or 8, which is characterized in that the height of the lenticule
Ranging from 1 μm to 2.5 μm of degree.
14. the forming method of cmos image sensor as claimed in claim 7 or 8, which is characterized in that the spacer medium
Width is less than or equal to 400nm.
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| CN201810024081.7A CN108269815A (en) | 2018-01-10 | 2018-01-10 | Cmos image sensor and forming method thereof |
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Cited By (10)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108807447A (en) * | 2018-08-03 | 2018-11-13 | 德淮半导体有限公司 | Imaging sensor and forming method thereof |
| CN108831901A (en) * | 2018-09-05 | 2018-11-16 | 德淮半导体有限公司 | Back side illumination image sensor and preparation method thereof |
| CN109616488A (en) * | 2018-12-05 | 2019-04-12 | 上海华力集成电路制造有限公司 | Cmos image sensor and its manufacturing method |
| CN110459553A (en) * | 2019-08-29 | 2019-11-15 | 苏州多感科技有限公司 | Lens assembly and forming method, optical sensor and encapsulating structure and packaging method |
| CN111653580A (en) * | 2020-06-08 | 2020-09-11 | 华天慧创科技（西安）有限公司 | Lens module and method for manufacturing same on photosensitive chip array |
| CN113725245A (en) * | 2021-09-06 | 2021-11-30 | 上海集成电路装备材料产业创新中心有限公司 | Pixel structure of CIS chip, micro lens array, image sensor and manufacturing method |
| CN114205002A (en) * | 2022-02-18 | 2022-03-18 | 晶芯成(北京)科技有限公司 | Communication receiving device, manufacturing method and electronic equipment |
| CN114204991A (en) * | 2022-02-18 | 2022-03-18 | 晶芯成(北京)科技有限公司 | Communication transmitting device, system, manufacturing method and electronic equipment |
| CN114204999A (en) * | 2022-02-18 | 2022-03-18 | 晶芯成(北京)科技有限公司 | Communication transmitting device, system, manufacturing method and electronic equipment |
| CN114384722A (en) * | 2021-11-26 | 2022-04-22 | 北海惠科光电技术有限公司 | Display panel preparation method, color film substrate and display panel |
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Application publication date: 20180710 |