CN108831901B - Backside illuminated image sensor and manufacturing method thereof - Google Patents
Backside illuminated image sensor and manufacturing method thereof Download PDFInfo
- Publication number
- CN108831901B CN108831901B CN201811030066.XA CN201811030066A CN108831901B CN 108831901 B CN108831901 B CN 108831901B CN 201811030066 A CN201811030066 A CN 201811030066A CN 108831901 B CN108831901 B CN 108831901B
- Authority
- CN
- China
- Prior art keywords
- layer
- light
- image sensor
- color filter
- shielding
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Active
Links
- 238000004519 manufacturing process Methods 0.000 title claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 60
- 239000002313 adhesive film Substances 0.000 claims abstract description 55
- 239000004065 semiconductor Substances 0.000 claims abstract description 52
- 239000002131 composite material Substances 0.000 claims abstract description 43
- 230000031700 light absorption Effects 0.000 claims abstract description 13
- 239000010410 layer Substances 0.000 claims description 267
- 239000000463 material Substances 0.000 claims description 77
- 229920005989 resin Polymers 0.000 claims description 26
- 239000011347 resin Substances 0.000 claims description 26
- 229910052751 metal Inorganic materials 0.000 claims description 25
- 239000002184 metal Substances 0.000 claims description 25
- 238000000034 method Methods 0.000 claims description 24
- 239000012790 adhesive layer Substances 0.000 claims description 18
- 238000005530 etching Methods 0.000 claims description 15
- 239000004925 Acrylic resin Substances 0.000 claims description 12
- 229920000178 Acrylic resin Polymers 0.000 claims description 12
- 229920006026 co-polymeric resin Polymers 0.000 claims description 11
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 10
- 239000006229 carbon black Substances 0.000 claims description 10
- 239000010936 titanium Substances 0.000 claims description 10
- 229910052719 titanium Inorganic materials 0.000 claims description 10
- 230000000694 effects Effects 0.000 claims description 9
- 239000003822 epoxy resin Substances 0.000 claims description 9
- 239000005011 phenolic resin Substances 0.000 claims description 9
- 229920000647 polyepoxide Polymers 0.000 claims description 9
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 8
- 229920001568 phenolic resin Polymers 0.000 claims description 8
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052782 aluminium Inorganic materials 0.000 claims description 7
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 7
- 229910052802 copper Inorganic materials 0.000 claims description 7
- 239000010949 copper Substances 0.000 claims description 7
- 229920002050 silicone resin Polymers 0.000 claims description 7
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 7
- 229910052721 tungsten Inorganic materials 0.000 claims description 7
- 239000010937 tungsten Substances 0.000 claims description 7
- 239000007769 metal material Substances 0.000 claims description 5
- 238000000151 deposition Methods 0.000 claims description 4
- 230000002745 absorbent Effects 0.000 claims 2
- 239000002250 absorbent Substances 0.000 claims 2
- 230000000903 blocking effect Effects 0.000 claims 2
- 230000003287 optical effect Effects 0.000 description 10
- 238000012216 screening Methods 0.000 description 7
- 238000010586 diagram Methods 0.000 description 5
- 239000005394 sealing glass Substances 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 4
- 238000005229 chemical vapour deposition Methods 0.000 description 4
- 230000006866 deterioration Effects 0.000 description 4
- 229910052732 germanium Inorganic materials 0.000 description 4
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 4
- 239000012212 insulator Substances 0.000 description 4
- 229910052710 silicon Inorganic materials 0.000 description 4
- 239000010703 silicon Substances 0.000 description 4
- 238000000576 coating method Methods 0.000 description 3
- 229920005990 polystyrene resin Polymers 0.000 description 3
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 description 2
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 2
- 229910000530 Gallium indium arsenide Inorganic materials 0.000 description 2
- KXNLCSXBJCPWGL-UHFFFAOYSA-N [Ga].[As].[In] Chemical compound [Ga].[As].[In] KXNLCSXBJCPWGL-UHFFFAOYSA-N 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 2
- 238000006243 chemical reaction Methods 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 238000006731 degradation reaction Methods 0.000 description 2
- 230000008021 deposition Effects 0.000 description 2
- 238000011161 development Methods 0.000 description 2
- KPUWHANPEXNPJT-UHFFFAOYSA-N disiloxane Chemical class [SiH3]O[SiH3] KPUWHANPEXNPJT-UHFFFAOYSA-N 0.000 description 2
- 238000011049 filling Methods 0.000 description 2
- 239000011521 glass Substances 0.000 description 2
- 229910000449 hafnium oxide Inorganic materials 0.000 description 2
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000012860 organic pigment Substances 0.000 description 2
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 description 2
- 229910010271 silicon carbide Inorganic materials 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 238000002955 isolation Methods 0.000 description 1
- 238000010030 laminating Methods 0.000 description 1
- 239000012528 membrane Substances 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000004528 spin coating Methods 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14603—Special geometry or disposition of pixel-elements, address-lines or gate-electrodes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1464—Back illuminated imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
Landscapes
- Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Electromagnetism (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
The technical scheme of the invention discloses a back-illuminated image sensor and a manufacturing method thereof, wherein the image sensor comprises a semiconductor substrate formed with more than one photodiode, the semiconductor substrate comprises different pixel regions, and the photodiodes correspond to the different pixel regions; an insulating film on the semiconductor substrate; a first light-shielding layer partially covering the insulating film and isolating the different pixel regions; an adhesive film covering the first light-shielding layer and the insulating film; the color filter layers partially cover the adhesive film and correspond to the positions of the photodiodes, and the color filter layers are isolated by a composite structure formed by the first light shielding layer and the adhesive film; a light absorbing layer on the composite structure; and a micro lens on each color filter layer, wherein the light absorption layer completely isolates the micro lens. The image sensor can effectively prevent external reflected light from entering the photodiode, and the performance of the image sensor is improved.
Description
Technical Field
The invention relates to the field of manufacturing of semiconductor devices, in particular to a back-illuminated image sensor and a manufacturing method thereof.
Background
An image sensor is a device that converts an optical image into an electrical signal. With the development of the computer and communication industries, the demand for high-performance image sensors, which are widely used in various fields such as digital cameras, camcorders, Personal Communication Systems (PCS), game machines, security cameras, medical miniature cameras, and the like, is increasing.
Image Sensors are generally of two types, a Charge Coupled Device (CCD) sensor and a CMOS Image Sensor (CIS). Compared with a CCD (charge coupled device) image sensor, the CMOS image sensor has the advantages of high integration level, low power consumption, low generation cost and the like.
In a conventional CMOS light sensing device, a light sensing diode is located behind a circuit transistor, and the amount of incident light is affected by shading. The back-illuminated CMOS is to turn the back-illuminated CMOS to make light firstly enter the photosensitive diode, thereby increasing the photosensitive quantity and obviously improving the shooting effect under the condition of low illumination.
However, the back-illuminated solid-state imaging device brings more reflected light from the surface of the seal glass, the infrared cut color filter layer, the optical system of the camera group, and the like into the photodiode. As a result, flare, ghost, and color mixing are liable to occur, and image quality deteriorates. In particular, in a large-sized solid-state imaging device, the pixel size is large, and the light receiving area is wide. Therefore, the photodiode absorbs a large amount of unnecessary light, and deterioration of image quality is more noticeable. Therefore, it is necessary to prevent the generation of reflected light to reduce the deterioration of image quality and obtain high image quality.
In order to solve this problem, the related art provides a back-illuminated image sensor 11 formed by sequentially laminating an insulating film 23, a non-planarized adhesive film 24, a color filter 25, and a microlens 26 on a semiconductor substrate 22 as shown in fig. 1, the semiconductor substrate 22 having formed therein a photodiode 21R of a red pixel 12R and a photodiode 21G of a green pixel 12G. In addition, in the back-illuminated image sensor 11, the first light-shielding layer 27 and the second light-shielding layer 28 are formed between the adjacent pixels 12.
The insulating film 23 insulates the surface on the side where light enters the semiconductor substrate 22, and the non-planarized adhesive film 24 is formed on the insulating film 23 and the first light shielding layer 27, and increases the adhesion between the color filter 25 and the second light shielding layer 28. The color filter 25 passes light of a predetermined color corresponding to the pixels 12R, 12G, and the color filter 25 of a color corresponding to the pixel 12R, 12G of the corresponding color is provided for each of the pixels 12R, 12G. The microlens 26 is designed to collect light for each pixel 12R, 12G, and is formed with, for example, a polystyrene resin, an acrylic resin, or a copolymer resin of these resins. The first light shielding layer 27 is stacked on the insulating film 23 so as to be positioned between the adjacent pixels 12R, 12G and shields the pixels 12R, 12G from each other. The second light-shielding layer 28 is superposed on the first light-shielding layer 27 via the non-planarized adhesive film 24 so as to be positioned between the adjacent pixels 12R, 12G and to shield the pixels 12R, 12G from each other. The first light-shielding layer 27 and the second light-shielding layer 28 are designed to have substantially the same thickness as the color filter 25. That is, the first light-shielding layer 27 and the second light-shielding layer 28 are designed to be located between the color filters 25 provided for the respective pixels 12. Since the two-layer structure in which the first light-shielding layer 27 and the second light-shielding layer 28 are formed is employed, the pixels 12R, 12G can be reliably shielded from each other, and light reflection between the pixels 12R, 12G can be prevented.
However, the back-illuminated image sensor can effectively reduce light reflection to a certain extent, but still has a certain performance improvement space.
Disclosure of Invention
The technical problem to be solved by the technical scheme of the invention is to provide a novel back-illuminated image sensor structure and a manufacturing method thereof aiming at the existing back-illuminated image sensor, so that the light reflection can be more effectively reduced compared with the prior art, and the reflected light is prevented from reentering the photodiode.
To solve the above technical problem, the present invention provides a backside illuminated image sensor, comprising:
a semiconductor substrate formed with one or more photodiodes, the semiconductor substrate including different pixel regions, the photodiodes corresponding to the different pixel regions;
an insulating film on the semiconductor substrate;
a first light-shielding layer partially covering the insulating film and isolating the different pixel regions;
an adhesive film covering the first light-shielding layer and the insulating film;
the color filter layers partially cover the adhesive film and correspond to the positions of the photodiodes, and the color filter layers are isolated by a composite structure formed by the first light shielding layer and the adhesive film;
a light absorbing layer on the composite structure;
and a micro lens on each color filter layer, wherein the light absorption layer completely isolates the micro lens.
Optionally, the thickness of the first light shielding layer is equal to that of the color filter layer.
Optionally, the light absorbing layer is a photosensitive resin containing carbon black or titanium black material.
Optionally, the light absorbing layer includes: a metallic light-shielding material layer formed on the composite structure; an intermediate adhesive layer covering the metal light-shielding material layer; and an outer light absorbing layer covering the intermediate adhesive layer. Wherein, the metal shading material layer can be selected from tungsten, aluminum or copper; the intermediate bonding layer can be selected from acrylic resin, phenolic resin, siloxane resin, epoxy resin or copolymer resin of the acrylic resin, the phenolic resin, the siloxane resin and the epoxy resin; the outer light absorbing layer may be selected from photosensitive resins containing carbon black or titanium black materials.
Optionally, the adhesive film is an acrylic resin, a phenolic resin, a silicone resin, an epoxy resin, or a copolymer resin of these resins.
The invention also provides a manufacturing method of the back-illuminated image sensor, which comprises the following steps:
providing a semiconductor substrate formed with photodiodes, the semiconductor substrate including different pixel regions, the photodiodes corresponding to the different pixel regions;
forming an insulating film and a first light-shielding layer on the semiconductor substrate, the first light-shielding layer partially covering the insulating film and isolating the different pixel regions;
forming an adhesive film on the insulating film and the first light-shielding layer;
forming a color filter layer corresponding to the position of each photodiode on the adhesive film, wherein the color filter layer is completely isolated by a composite structure formed by the first light shielding layer and the adhesive film;
forming a light absorbing layer on the composite structure;
and forming a micro lens on each color filter layer, wherein the light absorption layer completely isolates the micro lens.
Optionally, the method for forming the first light shielding layer includes: depositing a light-shielding material on the insulating film; and selectively etching the shading material, removing part of the shading material corresponding to the position of the photodiode, and forming a first shading layer for isolating the different pixel areas.
Optionally, the method of forming the light absorbing layer includes:
forming a light absorbing layer material on the adhesive film and the color filter layer by using a coating process; and removing part of the light absorption layer material by adopting an etching process, and only remaining the light absorption layer material on the composite structure to form the light absorption layer.
Optionally, the method for forming the light absorbing layer further comprises: forming a metal shading material layer on the composite structure; forming an intermediate bonding layer covering the metal shading material layer on the metal shading material layer; an outer light absorbing layer is formed on the intermediate adhesive layer to cover the intermediate adhesive layer.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
the back-illuminated image sensor isolates the color filter layer corresponding to each pixel region position through a composite structure formed by the first shading layer and the adhesive film; and through the light absorption layer on the composite structure that is located first light shield layer and adhesion membrane form, keep apart the microlens on the filter layer that is located each pixel zone corresponding position completely, can more effectively prevent to come from the sealed glass surface, infrared cutoff filter layer, more external reflection light such as camera unit's optical system gets into photodiode, can more effectively reduce the light reflection for prior art, reduces like the quality degradation and can gain higher like the quality.
In another embodiment of the present invention, the light absorbing layer is provided as a composite sandwich structure comprising a metallic light screening material layer, an intermediate adhesive layer, and an outer light screening layer in this order, wherein the metallic light screening material layer is located at the center of the composite sandwich structure. The structure can better isolate the light of the ULR part under each micro lens, realize the light absorption effect and further improve the performance of the image sensor.
Drawings
Fig. 1 is a schematic structural diagram of a conventional image sensor;
fig. 2 to 9 are schematic structural diagrams corresponding to steps of a method for forming a backside illuminated image sensor according to an embodiment of the invention;
fig. 10 is a schematic cross-sectional view of a back-illuminated image sensor structure according to another embodiment of the present invention.
Detailed Description
The present inventive concept will now be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the inventive concept are shown. Advantages and features of the inventive concept and methods of accomplishing the same will be apparent from the following more detailed description of exemplary embodiments, which is to be read in connection with the accompanying drawings. However, it should be noted that the inventive concept is not limited to the following exemplary embodiments, but may be implemented in various forms. Accordingly, the exemplary embodiments are provided only for the purpose of disclosing the inventive concept and enabling those skilled in the art to know the scope of the inventive concept. In the drawings, embodiments of the inventive concept are not limited to the specific examples provided herein, and have been enlarged for clarity.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular terms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may also be present.
Similarly, it will be understood that when an element such as a layer, region or substrate is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present. In contrast, the term "directly" means that there are no intervening elements. It will be further understood that the terms "comprises," "comprising," "includes" and/or "including," when used herein, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
In addition, embodiments in the detailed description will be described using cross-sectional views that are idealized exemplary diagrams of the inventive concept. Accordingly, the shapes of the exemplary diagrams may be changed according to manufacturing techniques and/or allowable errors. Accordingly, embodiments of the inventive concept are not limited to the specific shapes shown in the exemplary drawings, but may include other shapes that may be produced according to a manufacturing process. The regions illustrated in the figures are of a general nature and are intended to illustrate the particular shape of an element. Accordingly, this should not be construed as limiting the scope of the inventive concept.
It will be further understood that, although the terms first, second, third, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. Thus, a first element in some embodiments may be termed a second element in other embodiments without departing from the teachings of the present invention. The same reference numerals or the same reference identifiers denote the same elements throughout the specification.
Further, exemplary embodiments are described by referring to cross-sectional illustrations and/or plan illustrations that are idealized exemplary illustrations. Accordingly, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, example embodiments should not be construed as limited to the shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, an etched region shown as a rectangle will typically have rounded or curved features. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of exemplary embodiments.
In order to solve the technical problem that in the prior art, more reflected light of a back-illuminated image sensor from the surface of sealing glass, an infrared cut-off color filter layer, an optical system of a camera set and the like is brought into a photodiode to cause image quality degradation, the invention provides the back-illuminated image sensor and a manufacturing method of the back-illuminated image sensor, and the reflected light is better prevented from entering the photodiode.
The technical solution of the present invention will be described in detail below with reference to the embodiments and the accompanying drawings.
Fig. 2 to 9 are schematic structural diagrams corresponding to steps of an image sensor forming method according to an embodiment of the invention. The manufacturing method of the back-illuminated image sensor comprises the following steps: providing a semiconductor substrate 22 formed with photodiodes, the semiconductor substrate 22 including different pixel regions 20R, 20G, the photodiodes corresponding to the different pixel regions; forming an insulating film 23 and a first light shielding layer 27 on the semiconductor substrate, the first light shielding layer 27 partially covering the insulating film 23 and isolating the different pixel regions 20; forming an adhesive film 24 on the surfaces of the insulating film 23 and the first light-shielding layer 27; forming color filter layers 25R, 25G, 25B corresponding to the photodiode positions on the adhesive film 24 at positions corresponding to the respective pixel regions, the color filter layer 25 being completely isolated by a composite structure formed by the first light shielding layer 27 and the adhesive film 24; forming a light absorbing layer 28 on the composite structure formed by the first light shielding layer 27 and the adhesive film 24; microlenses 26 are formed on the color filter layers 25R, 25G, 25B at corresponding positions of the respective pixel regions, and the light absorbing layer 28 completely isolates the microlenses 26.
Referring to fig. 2, a semiconductor substrate 22 formed with photodiodes is first provided, the semiconductor substrate 22 including different pixel regions 20R and 20G, the photodiodes corresponding to the different pixel regions and including different pixel units;
in this embodiment, the semiconductor substrate 22 may be a silicon substrate, or the material of the semiconductor substrate 22 may also be germanium, silicon carbide, gallium arsenide, or indium gallium arsenide, and the semiconductor substrate 22 may also be a silicon substrate on an insulator, a germanium substrate on an insulator, or a substrate on which an epitaxial layer is grown. The semiconductor substrate 22 includes a photodiode for converting a received optical signal into an electrical signal. The semiconductor substrate 22 is divided into different pixel regions, as required, schematically illustrated as a red pixel region 20R and a green pixel region 20G, and different photodiodes correspond to different pixel regions. When the pixel region is described in this embodiment, any one of the pixel regions may be referred to unless otherwise specified.
As shown in fig. 2, the photodiode includes a basic pixel unit such as a red pixel, a green pixel, and a blue pixel, or various other pixel units. In fig. 2, for convenience of description, a photodiode 21R corresponding to a red pixel region 20R and a photodiode 21G corresponding to a green pixel region 20G are fully schematically drawn, and a photodiode 21B adjacent to a red pixel cell is partially schematically drawn.
The photodiodes may be arranged in a Bayer (Bayer) array in the semiconductor substrate 22, or may be arranged in any other array as necessary. In order to meet the requirement of thinning the total thickness of the semiconductor substrate 22, the positions of the respective photodiodes in the semiconductor substrate 22 are generally at substantially the same depth.
Subsequently, an insulating film 23 is formed on the light incident surface of the semiconductor substrate 22, and a first light shielding layer 27 is formed on the insulating film 23.
The insulating film 23 is formed by, for example, performing a chemical vapor deposition process on the upper surface of the semiconductor substrate 22, which is a light incident surface of the semiconductor substrate 22. The insulating film 23 not only insulates the light incident surface of the semiconductor substrate 22, but also has a function of preventing light from the light incident surface of the semiconductor substrate 22 from being reflected. The insulating film 23 is, for example, a stacked structure including a hafnium oxide film and silicon dioxide.
Thereafter, a first light shielding layer 27 is formed on the insulating film 23, and the first light shielding layer 27 may be made of a metal, or a black color filter material absorbing light, or may be formed of an electrode of an organic photoelectric conversion film. The first light-shielding layer 27 covers the insulating film 23 and is provided at a position corresponding to a position between adjacent pixel regions, thereby shielding the photodiodes from each other.
In this embodiment, the first light shielding layer 27 is used to isolate the subsequently formed color filter layers 25, so that the present embodiment has a certain limitation on the thickness thereof, the thickness thereof is equal to the thickness of the subsequently formed color filter layers 25, and the thickness of the first light shielding layer 27 is set to achieve light shielding between the adjacent color filter layers 25, thereby better isolating light crosstalk.
The material of the first light shielding layer 27 is preferably a metal material having a light shielding effect, such as tungsten, aluminum, or copper, and the process of forming the first light shielding layer 27 is, for example, chemical vapor deposition of a light shielding material and selective etching, and then removing a portion of the light shielding material corresponding to the photodiode position, so as to form the first light shielding layer 27 for isolating different pixel regions.
Referring to fig. 3, an adhesive film 24 is formed on the surface of the insulating film and the first light shielding layer 27, and the adhesive film 24 is non-planar since the first light shielding layer 27 partially covers the insulating film 23. The adhesive film 24 is formed using, for example, an acrylic resin, a phenolic resin, a silicone resin, an epoxy resin, or a copolymer resin of these resins. The adhesive film 24 serves to increase the adhesion between the subsequently formed second light-shielding layer 28 and the first light-shielding layer 27.
Referring to fig. 4 and 5, a color filter layer 25 corresponding to different pixels is formed on an adhesive film 24 at a position corresponding to each pixel region, and the color filter layer 25 is completely isolated by a composite structure formed by the first light shielding layer 27 and the adhesive film 24; referring to fig. 4, the red color filter layer 25R is formed first, and then, referring to fig. 5, the green color filter layer 25G and the blue color filter layer 25B are formed continuously.
The color filter layers 25R, 25G, and 25B pass light of a predetermined color corresponding to each photodiode. That is, as shown in the figure, a red color filter layer 25R is provided for the photodiode 21R, a green color filter layer 25G is provided for the photodiode 21G, and a blue color filter layer 25B is provided for the photodiode 21B. Each of the color filter layers 25R, 25G, 25B is formed with a resin to which an organic pigment is added inside, and is designed to have a thickness of about 400nm to 1000nm, for example.
In this embodiment, the composite structure composed of the first light shielding layer 27 and the adhesive film 24 completely isolates the color filter layers of different pixels, and on one hand, the composite structure facilitates filling of color filter layer materials between the composite structures in subsequent manufacturing of the color filter layers 25R, 25G, and 25B, and on the other hand, can completely isolate crosstalk between the color filter layers 25R, 25G, and 25B.
Referring to fig. 6, a light absorbing layer 28 is formed on the composite structure of the first light shielding layer 27 and the adhesive film 24.
Alternatively, the light absorbing layer 28 may be a photosensitive resin containing carbon black or titanium black material. In order to facilitate the subsequent process of forming the microlenses 26, the light absorbing Layer 28 has a height greater than that of the remaining (ULR) portions of the microlens, which are non-convex portions of the microlens, so as to facilitate the fabrication of the microlens. In this embodiment, the thickness ranges between 200nm and 500 nm.
In the present embodiment, the light absorbing layer 28 has a thickness in the range of 200nm to 500nm, and a thickness greater than or equal to ULR, and the thickness is set to better absorb the external reflected light and prevent the external reflected light from entering the adjacent pixel region through the ULR portion to cause ghost.
The light absorbing layer 28 may be a photosensitive resin containing carbon black or titanium black, and is formed by coating (Coat) on the adhesive film 24 and the color filter layer, and then removing a part of the light absorbing layer by etching, and only a part of the light absorbing layer on the position corresponding to the composite structure of the first light shielding layer and the adhesive film 24 is remained, so as to form the light absorbing layer 28 on the composite structure of the first light shielding layer 27 and the adhesive film 24.
In the image sensor of the present embodiment, the light absorbing layer 28 is provided to more effectively prevent the reflected light from the optical system such as the sealing glass surface, the infrared cut filter layer, the camera unit, and the like from entering the photodiode.
Referring to fig. 7 to 9, microlenses 26R, 26G, and 26B are formed on the color filter layers 25R, 25G, and 25B at corresponding positions of the respective pixel regions, and the light absorbing layer 28 completely isolates the microlenses 26R, 26G, and 26B. The method of forming the microlenses 26R, 26G includes: referring to fig. 7, a microlens material layer 26 is first formed to cover the light absorbing layer 28 and the color filter layers 25R, 25G, and 25B, and then referring to fig. 8, a photosensitive resin mask 29 is formed on the microlens material layer 26, and finally referring to fig. 9, a pattern of the photosensitive resin mask 29 is transferred to the microlens material layer 26 by etching to form microlenses. The light absorbing layer 28 completely isolates different portions of the microlens, and this completely isolated structure can better absorb external reflected light and prevent the external reflected light from entering adjacent pixel regions through the ULR portion to cause ghost images.
The microlens is used to collect light for each pixel unit, and is made of, for example, a polystyrene resin, an acrylic resin, or a copolymer resin of these resins.
Still further, referring to fig. 10, the light absorbing layer 28 includes: a metallic light-screening material layer 37 formed on the composite structure; an intermediate adhesive layer 34 covering the metal light-shielding material layer 37; and an outer light absorbing layer 38 overlying the intermediate adhesive layer.
The material 37 of the metal light-shielding material layer can be selected from metal materials with light-shielding effect, such as tungsten, aluminum, or copper; the intermediate adhesive layer 34 may be selected from an acrylic resin, a phenolic resin, a silicone resin, an epoxy resin, or a copolymer resin of these resins, and serves to increase the adhesion of the metallic light screening material layer 37 to the outer light absorbing layer 38. The outer light absorbing layer 38 may be selected from photosensitive resins containing carbon black or titanium black materials.
The specific process for forming the light absorbing layer 28 is as follows: first, a metal light-shielding material layer 37 is formed, specifically, a film layer of a metal light-shielding material is formed on the composite structure formed by the first light-shielding layer 27 and the adhesive film 24 by deposition, and then a part of the film layer is removed by etching, and only the part on the composite structure formed by the first light-shielding layer 27 and the adhesive film 24 is remained to form the metal light-shielding material layer. The thickness of the metallic light screening material layer 37 is slightly greater than the set thickness of the ULR.
Then, a material for forming the intermediate adhesive layer 34 is deposited on the metal light-shielding material layer 37 by using a deposition process, and an etching process is performed to remove a part of the material by etching, so that only a part covering the metal light-shielding material layer 37 is remained, thereby forming the intermediate adhesive layer 34.
Then, a material for forming the outer light absorbing layer 38 is coated on the surface of the intermediate bonding layer 34 by using a spin coating process, and an etching process is performed to remove a portion of the material by etching, and only a portion covering the intermediate bonding layer 34 remains to form the outer light absorbing layer 38.
The structure can better isolate the light of the ULR part under each micro lens, realize the light absorption effect and further improve the performance of the image sensor.
Compared with the prior art, the image sensor structure can not only prevent light crosstalk between the color filter layers, but also prevent double images caused by external light reflection in the ULR part, thereby more external reflected light from the surface of the sealing glass, the infrared cut-off color filter layers, an optical system of a camera set and the like can be more effectively prevented from entering the photodiode, and compared with the prior art, the image sensor structure can more effectively reduce light reflection, reduce image quality deterioration and obtain higher image quality.
Example 2
Referring to fig. 9 and 10, the present embodiment provides two back-illuminated image sensor structures, including:
a semiconductor substrate 22 formed with one or more photodiodes 21R, 21G, the semiconductor substrate including different pixel regions 20R, 20G, the photodiodes corresponding to the different pixel regions 20R, 20G;
an insulating film 23 on the semiconductor substrate 22;
a first light-shielding layer 27 partially covering the insulating film 23 and isolating the different pixel regions;
an adhesive film 24 covering the first light-shielding layer 27 and the insulating film 23;
color filter layers 25R, 25G, and 25B partially covering the adhesive film 24 and corresponding to the positions of the photodiodes, the color filter layers 25R, 25G, and 25B being separated from each other by a composite structure formed by the first light shielding layer 27 and the adhesive film 24;
a light absorbing layer 28 on the composite structure formed by the first light shielding layer 27 and the adhesive film 24;
microlenses 26R, 26G, 26B are located on each color filter layer 25, and the light absorbing layer 28 completely isolates the microlenses 26R, 26G, 26B.
The semiconductor substrate 22 may be a silicon substrate, or may also be germanium, silicon carbide, gallium arsenide, or indium gallium arsenide, or further, the semiconductor substrate 22 may also be a silicon substrate on an insulator, or a germanium substrate on an insulator, or a substrate on which an epitaxial layer is grown. The semiconductor substrate 22 includes a photodiode for converting a received optical signal into an electrical signal. As required, the semiconductor substrate 22 is divided into different pixel regions, a red pixel region 20R and a green pixel region 20G are schematically shown in the figure, and different photodiodes correspond to different pixel regions.
The photodiode is formed with a basic pixel unit such as a red pixel, a green pixel, and a blue pixel, or other various pixel units. In fig. 9, a photodiode 21R corresponding to the red pixel region 20R and a photodiode 21G corresponding to the green pixel region 20G are schematically drawn, and a photodiode 21B adjacent to the red pixel cell is partially schematically drawn. The photodiodes may be arranged in a Bayer (Bayer) array in the semiconductor substrate 22, or may be arranged in any other array as necessary. In order to meet the requirement of thinning the total thickness of the semiconductor substrate 22, the positions of the respective photodiodes in the semiconductor substrate 22 are generally at substantially the same depth.
The insulating film 23 is disposed on the upper surface of the semiconductor substrate 22, and is formed by, for example, performing a chemical vapor deposition process on the upper surface of the semiconductor substrate 22, wherein the upper surface refers to a light incident surface of the semiconductor substrate 22. The insulating film 23 not only insulates the light incident surface of the semiconductor substrate 22, but also has a function of preventing light from the light incident surface of the semiconductor substrate 22 from being reflected. The insulating film 23 is, for example, a stacked structure including a hafnium oxide film and silicon dioxide.
The first light-shielding layer 27 covers the insulating film 23 and is provided at a position corresponding to a position between adjacent pixel regions, thereby shielding the photodiodes from each other. The first light-shielding layer 27 may be made of a metal, or a black color filter material absorbing light, or may be formed of an electrode of an organic photoelectric conversion film.
In this embodiment, since the first light shielding layer 27 is used to isolate the subsequently formed color filter layers 25R, 25G, and 25B, the thickness thereof is equal to the thickness of the subsequently formed color filter layers 25R, 25G, and 25B. The first light shielding layer 27 is formed to have a thickness such that adjacent color filter layers 25R, 25G, and 25B are shielded from each other, thereby further isolating crosstalk.
The material of the first light shielding layer 27 is preferably a metal material having a light shielding effect, such as tungsten, aluminum, or copper, and the process of forming the first light shielding layer 27 is, for example, chemical vapor deposition of a light shielding material and selective etching, and then removing a portion of the light shielding material corresponding to the photodiode, so as to form the first light shielding layer 27.
The adhesive film 24 covers the insulating film and the surface of the first light shielding layer 27, and the adhesive film 24 is non-planar since the first light shielding layer 27 partially covers the insulating film 23. The adhesive film 24 is formed using, for example, an acrylic resin, a phenolic resin, a silicone resin, an epoxy resin, or a copolymer resin of these resins. The adhesive film 24 serves to increase the adhesion between the subsequently formed second light-shielding layer 28 and the first light-shielding layer 27.
The color filter layers 25R, 25G and 25B are positioned on the adhesive film 24 at the corresponding positions of the pixel areas, and the color filter layers 25R, 25G and 25B are completely isolated by a composite structure formed by the first shading layer 27 and the adhesive film 24; the color filter layers 25R, 25G, and 25B pass light of a predetermined color corresponding to the photodiode. As shown in the figure, a red color filter layer 25R is provided for the photodiode 21R, a green color filter layer 25G is provided for the photodiode 21G, and a blue color filter layer 25B is provided for the photodiode 21B. Each of the color filter layers 25R, 25G, 25B is formed with a resin to which an organic pigment is added inside, and is designed to have a thickness of about 400nm to 1000nm, for example.
In this embodiment, the composite structure composed of the first light shielding layer 27 and the adhesive film 24 completely isolates the color filter layers of different pixels, and on one hand, the composite structure facilitates filling of color filter layer materials between the composite structures in subsequent manufacturing of the color filter layers 25R, 25G, and 25B, and on the other hand, can completely isolate crosstalk between the color filter layers 25R, 25G, and 25B.
The light absorbing layer 28 is formed on the composite structure of the first light shielding layer 27 and the adhesive film 24. The light absorbing layer 28 may also be a photosensitive resin containing carbon black or titanium black material. In order to facilitate the subsequent process of forming the microlenses 26R, 26G, 26B, the light absorbing Layer 28 is higher than the remaining (ULR) portions of the microlens, which are non-convex portions of the microlens, so as to facilitate the fabrication of the microlens. In this embodiment, the thickness ranges between 200nm and 500 nm.
In the present embodiment, the light absorbing layer 28 has a thickness in the range of 200nm to 500nm, and a thickness greater than or equal to ULR, and the thickness is set to better absorb the external reflected light and prevent the external reflected light from entering the adjacent pixel region through the ULR portion to cause ghost.
The light absorbing layer 28 is formed by a method such as etching or direct development, depending on the material selected. When the light absorbing layer 28 is a photosensitive resin containing a material of carbon black or titanium black, a light absorbing layer material is formed on the composite structure formed by the first light shielding layer and the adhesive film 24 by a coating (Coat) method, and then a portion of the light absorbing layer material corresponding to the position of the photodiode is removed by etching, so that the light absorbing layer material corresponding to the position of the composite structure formed by the first light shielding layer 27 and the adhesive film 24 is remained, and the light absorbing layer 28 on the composite structure formed by the first light shielding layer 27 and the adhesive film 24 is formed.
In the image sensor of the present embodiment, the light absorbing layer 28 is provided to more effectively prevent the reflected light from the optical system such as the sealing glass surface, the infrared cut filter layer, the camera unit, and the like from entering the photodiode.
The image sensor further includes microlenses 26R, 26G, 26B formed on the color filter layers 25R, 25G, 25B at corresponding positions of the respective pixel regions, and the light absorbing layer 28 completely isolates the microlenses 26R, 26G, 26B. The complete isolation structure can better absorb external reflection light and prevent the external reflection light from entering an adjacent pixel region through the ULR part to cause double image. The microlens is used to collect light for each pixel unit, and is made of, for example, a polystyrene resin, an acrylic resin, or a copolymer resin of these resins.
Still further, referring to fig. 10, the light absorbing layer 28 includes: a metal light-shielding material layer 37, the metal light-shielding material layer 37 covering the composite structure formed by the first light-shielding layer 27 and the adhesive film 24; an intermediate adhesive layer 34 covering the metal light-shielding material layer 37; and an outer light absorbing layer 38 overlying the intermediate adhesive layer.
The material of the metal shading material layer can be tungsten, aluminum or copper and other metal materials with shading effect, and the manufacturing process comprises deposition and selective etching; the material of the intermediate adhesive layer may be selected from acrylic resin, phenol resin, silicone resin, epoxy resin, or copolymer resin of these resins, for increasing the adhesion of the metal light screening material layer 37 to the outer light absorbing layer 38. The material of the outer light absorbing layer may be selected from photosensitive resins containing carbon black or titanium black materials. The light absorption layer structure can better isolate the light of the ULR part under each micro lens, realizes the light absorption effect and further improves the performance of the image sensor.
Compared with the prior art, the image sensor structure can not only prevent light crosstalk between the color filter layers, but also prevent double images caused by external light reflection in the ULR part, thereby more external reflected light from the surface of the sealing glass, the infrared cut-off color filter layers, an optical system of a camera set and the like can be more effectively prevented from entering the photodiode, and compared with the prior art, the image sensor structure can more effectively reduce light reflection, reduce image quality deterioration and obtain higher image quality.
Although the present invention has been described with reference to the preferred embodiments, it is not intended to limit the present invention, and those skilled in the art can make modifications and variations of the present invention without departing from the spirit and scope of the present invention.
Claims (12)
1. A backside illuminated image sensor, comprising:
a semiconductor substrate formed with one or more photodiodes, the semiconductor substrate including different pixel regions, the photodiodes corresponding to the different pixel regions;
an insulating film on the semiconductor substrate;
a first light-shielding layer partially covering the insulating film and isolating the different pixel regions;
an adhesive film covering the first light-shielding layer and the insulating film;
the color filter layers partially cover the adhesive film and correspond to the positions of the photodiodes, and the color filter layers are isolated by a composite structure formed by the first light shielding layer and the adhesive film;
a light absorbent layer on said composite structure, wherein said light absorbent layer comprises: a metallic light-shielding material layer formed on the composite structure; an intermediate adhesive layer covering the metal light-shielding material layer; and an outer light absorbing layer overlying the intermediate bonding layer;
and a micro lens on each color filter layer, wherein the light absorption layer completely isolates the micro lens.
2. The back-illuminated image sensor as claimed in claim 1, wherein the first light-shielding layer is a metal material having a light-shielding effect.
3. The back-illuminated image sensor of claim 2, wherein the first light-shielding layer material is tungsten, aluminum, or copper.
4. The back-illuminated image sensor of claim 1, wherein the first light blocking layer has a thickness equal to a thickness of the color filter layer.
5. The back-illuminated image sensor as in claim 1, wherein the light absorbing layer is a photosensitive resin containing a carbon black or titanium black material.
6. The back-illuminated image sensor of claim 1, wherein the metal light blocking material layer material is tungsten, aluminum, or copper.
7. The back-illuminated image sensor as claimed in claim 1, wherein the intermediate adhesive layer is an acrylic resin, a phenolic resin, a silicone resin, an epoxy resin, or a copolymer resin of these resins.
8. The back-illuminated image sensor of claim 1, wherein the outer light absorbing layer is a photosensitive resin containing a carbon black or titanium black material.
9. The back-illuminated image sensor as claimed in claim 1, wherein the adhesive film is an acrylic resin, a phenolic resin, a silicone resin, an epoxy resin, or a copolymer resin of these resins.
10. A method of fabricating a back-illuminated image sensor as claimed in any one of claims 1 to 9, comprising:
providing a semiconductor substrate formed with more than one photodiode, wherein the semiconductor substrate comprises different pixel regions, and the photodiodes correspond to the different pixel regions;
sequentially forming an insulating film and a first light-shielding layer on the semiconductor substrate, the first light-shielding layer partially covering the insulating film and isolating the different pixel regions;
forming an adhesive film on the insulating film and the first light-shielding layer;
forming a color filter layer corresponding to the position of each photodiode on the adhesive film, wherein the color filter layer is completely isolated by a composite structure formed by the first light shielding layer and the adhesive film;
forming a light absorbing layer on said composite structure, wherein said light absorbing layer comprises: a metallic light-shielding material layer formed on the composite structure; an intermediate adhesive layer covering the metal light-shielding material layer; and an outer light absorbing layer overlying the intermediate bonding layer;
and forming a micro lens on each color filter layer, wherein the light absorption layer completely isolates the micro lens.
11. The method of manufacturing a back-illuminated image sensor according to claim 10, wherein the method of forming the first light-shielding layer comprises:
depositing a light-shielding material on the insulating film;
and selectively etching the shading material, removing part of the shading material corresponding to the position of the photodiode, and forming a first shading layer for isolating the different pixel areas.
12. The method of fabricating the back-illuminated image sensor of claim 10, wherein the method of forming the light absorbing layer comprises:
forming a metal shading material layer on the composite structure;
forming an intermediate bonding layer covering the metal shading material layer on the metal shading material layer;
an outer light absorbing layer is formed on the intermediate adhesive layer to cover the intermediate adhesive layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811030066.XA CN108831901B (en) | 2018-09-05 | 2018-09-05 | Backside illuminated image sensor and manufacturing method thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201811030066.XA CN108831901B (en) | 2018-09-05 | 2018-09-05 | Backside illuminated image sensor and manufacturing method thereof |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN108831901A CN108831901A (en) | 2018-11-16 |
| CN108831901B true CN108831901B (en) | 2021-01-22 |
Family
ID=64150902
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201811030066.XA Active CN108831901B (en) | 2018-09-05 | 2018-09-05 | Backside illuminated image sensor and manufacturing method thereof |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN108831901B (en) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP7515433B2 (en) * | 2021-03-08 | 2024-07-12 | 株式会社デンソー | Light-curing adhesive |
Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1819221A (en) * | 2004-12-30 | 2006-08-16 | 东部亚南半导体株式会社 | CMOS image sensor and method for fabricating the same |
| CN106796942A (en) * | 2014-10-03 | 2017-05-31 | 索尼半导体解决方案公司 | Solid-state imaging element, manufacture method and electronic equipment |
| CN108198830A (en) * | 2018-01-30 | 2018-06-22 | 德淮半导体有限公司 | Imaging sensor and the method for forming imaging sensor |
| CN108269815A (en) * | 2018-01-10 | 2018-07-10 | 德淮半导体有限公司 | Cmos image sensor and forming method thereof |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US6979588B2 (en) * | 2003-01-29 | 2005-12-27 | Hynix Semiconductor Inc. | Method for manufacturing CMOS image sensor having microlens therein with high photosensitivity |
-
2018
- 2018-09-05 CN CN201811030066.XA patent/CN108831901B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1819221A (en) * | 2004-12-30 | 2006-08-16 | 东部亚南半导体株式会社 | CMOS image sensor and method for fabricating the same |
| CN106796942A (en) * | 2014-10-03 | 2017-05-31 | 索尼半导体解决方案公司 | Solid-state imaging element, manufacture method and electronic equipment |
| CN108269815A (en) * | 2018-01-10 | 2018-07-10 | 德淮半导体有限公司 | Cmos image sensor and forming method thereof |
| CN108198830A (en) * | 2018-01-30 | 2018-06-22 | 德淮半导体有限公司 | Imaging sensor and the method for forming imaging sensor |
Also Published As
| Publication number | Publication date |
|---|---|
| CN108831901A (en) | 2018-11-16 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11621288B2 (en) | Solid-state imaging device, manufacturing method thereof, and electronic apparatus | |
| JP5468133B2 (en) | Solid-state imaging device | |
| US9111828B2 (en) | Solid-state imaging device, method for manufacturing solid-state imaging device, and electronic apparatus | |
| CN109166871B (en) | Image sensor and manufacturing method thereof | |
| JP4751865B2 (en) | Back-illuminated solid-state imaging device and manufacturing method thereof | |
| JP2011258728A (en) | Solid state image sensor and electronic information apparatus | |
| JP2009021415A (en) | Solid-state imaging apparatus and manufacturing method thereof | |
| US10490586B2 (en) | Solid-state imaging device with light shielding films, method of manufacturing the same, and electronic apparatus | |
| TWI771850B (en) | Image sensor with partially encapsulating attenuation layer | |
| CN108847418A (en) | A kind of image sensor structure and forming method enhancing near-infrared quantum efficiency | |
| KR102497910B1 (en) | Solid-state image sensor | |
| CN109003993A (en) | Imaging sensor and forming method thereof | |
| CN108831901B (en) | Backside illuminated image sensor and manufacturing method thereof | |
| CN110752227B (en) | Image sensing device | |
| US20210242274A1 (en) | Image sensor structure and method of forming the same | |
| KR100538149B1 (en) | Image sensor | |
| CN109273480B (en) | Image sensor and manufacturing method thereof | |
| JP7185753B1 (en) | Solid-state image sensor |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| PB01 | Publication | ||
| PB01 | Publication | ||
| SE01 | Entry into force of request for substantive examination | ||
| SE01 | Entry into force of request for substantive examination | ||
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20230720 Address after: 223001 Room 318, Building 6, east of Zhenda Steel Pipe Company, south of Qianjiang Road, Huaiyin District, Huai'an City, Jiangsu Province Patentee after: Huaian Xide Industrial Design Co.,Ltd. Address before: 223300 no.599, East Changjiang Road, Huaiyin District, Huai'an City, Jiangsu Province Patentee before: HUAIAN IMAGING DEVICE MANUFACTURER Corp. |
|
| TR01 | Transfer of patent right |