CN109273480B - Image sensor and manufacturing method thereof - Google Patents
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Abstract
The technical scheme of the invention discloses an image sensor and a manufacturing method thereof, wherein the image sensor comprises a semiconductor substrate formed with a photodiode, the semiconductor substrate comprises different pixel areas, and the pixel areas comprise white pixel areas; an insulating structure on the semiconductor substrate; a light shielding film on the insulating structure to partially cover the insulating structure; the color filter layers are positioned on the insulating structure and correspond to different pixels, each color filter layer comprises a white color filter layer, and the light shielding films isolate the color filter layers; an organic photodiode located above the white color filter layer and partially shielding the white color filter layer; and a micro lens positioned above the color filter layer. The image sensor not only improves the image quality of the image sensor, but also improves the sensitivity of the image sensor.
Description
Technical Field
The invention relates to the field of manufacturing of semiconductor devices, in particular to an image sensor and a manufacturing method thereof.
Background
An image sensor is a device that converts an optical image into an electrical signal. With the development of the computer and communication industries, the demand for high-performance image sensors, which are widely used in various fields such as digital cameras, camcorders, Personal Communication Systems (PCS), game machines, security cameras, medical miniature cameras, and the like, is increasing.
Image Sensors are generally of two types, a Charge Coupled Device (CCD) sensor and a CMOS Image Sensor (CIS). Compared with a CCD (charge coupled device) image sensor, the CMOS image sensor has the advantages of high integration level, low power consumption, low generation cost and the like.
In a conventional CMOS light sensing device, a light sensing diode is located behind a circuit transistor, and the amount of incident light is affected by shading. The back-illuminated CMOS is turned, so that light rays firstly enter the photosensitive diode, the photosensitive quantity is increased, and the shooting effect under the low-illumination condition is obviously improved. The stacked image sensor is formed by placing a signal processing circuit in the original image sensor on the original semiconductor substrate and overlapping the pixel part of the back-illuminated image sensor on the image sensor chip, so that a large number of pixels can be formed on a smaller image sensor chip size, and more pixels can be placed in the vacated space. In addition, the pixel points and the circuits in the sensor are mutually independent, so that the pixel point part can be optimized in higher image quality, and the circuit part can also be optimized in high performance. In addition, the stack type image sensor adds an RGBW coding technology, namely, W (white) pixel points are added into original R (red), G (green) and B (blue) three-primary-color pixel points to improve the image quality, improve the light sensitivity of the sensor and enable the camera to shoot a picture with higher quality in a dark light environment. However, the W pixel is more easily saturated than other pixels, and electrons may overflow into adjacent photodiodes, resulting in a decrease in image quality.
Disclosure of Invention
The technical problem to be solved by the technical scheme of the invention is as follows: aiming at the defect that white light pixels in the existing image sensor are easy to saturate, and electrons overflow into adjacent photodiodes, so that the image quality is reduced, a novel image sensor structure and a manufacturing method thereof are provided, and the imaging quality and the imaging sensitivity of the image sensor under dark light are improved.
To solve the above technical problem, the present invention provides an image sensor, including: a semiconductor substrate on which a photodiode is formed, the semiconductor substrate including different pixel regions including a white pixel region and at least one of a red pixel region, a green pixel region, and a blue pixel region; an insulating structure on the semiconductor substrate; a light shielding film on the insulating structure to partially cover the insulating structure; the color filter layers are positioned on the insulating structure and correspond to different pixels, each color filter layer comprises a white color filter layer, and the light shielding films isolate the color filter layers; an organic photodiode located above the white color filter layer and partially shielding the white color filter layer; and a micro lens positioned above the color filter layer.
The invention also provides a manufacturing method of the image sensor, which comprises the following steps: providing a semiconductor substrate formed with a photodiode, the semiconductor substrate including different pixel regions including a white pixel region and at least one of a red pixel region, a green pixel region, and a blue pixel region; forming an insulating structure on the semiconductor substrate; forming a light shielding film on the insulating structure to partially cover the insulating structure; forming color filter layers corresponding to different pixels on an insulating structure, wherein the color filter layers comprise white color filter layers, and the insulating structure isolates the color filter layers of the different pixels; forming an organic photodiode partially shielding the white color filter layer over the white color filter layer; and forming a micro lens above the color filter layer at the corresponding position of each pixel region.
Optionally, the light shielding film in the image sensor and the manufacturing method of the image sensor are made of a metal material with a light shielding effect, and further, the light shielding film material is tungsten, aluminum or copper.
Optionally, the insulating structure is a stacked structure formed by multiple dielectric layers, and further, the insulating structure includes one or more of a high dielectric constant material layer, an anti-reflection layer, and an adhesion dielectric layer.
Compared with the prior art, the technical scheme of the invention has the following beneficial effects:
in the manufacturing method and structure of the image sensor provided by the invention, the organic photodiode partially shields the white color filter layer, so that the light incoming quantity of the photodiode can be reduced, meanwhile, the organic photodiode can absorb white light, the photoelectric conversion efficiency of the white light is improved, the electronic crosstalk of the photodiode is reduced, and under the condition of dark light, the image quality of the image sensor is improved, and the sensitivity of the image sensor is also improved.
Drawings
Fig. 1 to 5 are schematic structural diagrams corresponding to steps of an image sensor forming method according to an embodiment of the invention.
Detailed Description
The present inventive concept will now be described more fully hereinafter with reference to the accompanying drawings, in which exemplary embodiments of the inventive concept are shown. Advantages and features of the inventive concept and methods of accomplishing the same will be apparent from the following more detailed description of exemplary embodiments, which is to be read in connection with the accompanying drawings. However, it should be noted that the inventive concept is not limited to the following exemplary embodiments, but may be implemented in various forms. Accordingly, the exemplary embodiments are provided only for the purpose of disclosing the inventive concept and enabling those skilled in the art to know the scope of the inventive concept. In the drawings, embodiments of the inventive concept are not limited to the specific examples provided herein, and have been enlarged for clarity.
The terminology used herein is for the purpose of describing particular embodiments only and is not intended to be limiting of the invention. As used herein, the singular terms "a", "an" and "the" are intended to include the plural forms as well, unless the context clearly indicates otherwise. As used herein, the term "and/or" includes any and all combinations of one or more of the associated listed items. It will be understood that when an element is referred to as being "connected" or "coupled" to another element, it can be directly connected or coupled to the other element or intervening elements may also be present.
Similarly, it will be understood that when an element such as a layer, region or substrate is referred to as being "on" another element, it can be directly on the other element or intervening elements may also be present. In contrast, the term "directly" means that there are no intervening elements. It will be further understood that the terms "comprises," "comprising," "includes" and/or "including," when used herein, specify the presence of stated features, integers, steps, operations, elements, and/or components, but do not preclude the presence or addition of one or more other features, integers, steps, operations, elements, components, and/or groups thereof.
In addition, embodiments in the detailed description will be described using cross-sectional views that are idealized exemplary diagrams of the inventive concept. Accordingly, the shapes of the exemplary diagrams may be changed according to manufacturing techniques and/or allowable errors. Accordingly, embodiments of the inventive concept are not limited to the specific shapes shown in the exemplary drawings, but may include other shapes that may be produced according to a manufacturing process. The regions illustrated in the figures are of a general nature and are intended to illustrate the particular shape of an element. Accordingly, this should not be construed as limiting the scope of the inventive concept.
It will be further understood that, although the terms first, second, third, etc. may be used herein to describe various elements, these elements should not be limited by these terms. These terms are only used to distinguish one element from another. Thus, a first element in some embodiments may be termed a second element in other embodiments without departing from the teachings of the present invention. The same reference numerals or the same reference identifiers denote the same elements throughout the specification.
Further, exemplary embodiments are described by referring to cross-sectional illustrations and/or plan illustrations that are idealized exemplary illustrations. Accordingly, variations from the shapes of the illustrations as a result, for example, of manufacturing techniques and/or tolerances, are to be expected. Thus, example embodiments should not be construed as limited to the shapes of regions illustrated herein but are to include deviations in shapes that result, for example, from manufacturing. For example, an etched region shown as a rectangle will typically have rounded or curved features. Thus, the regions illustrated in the figures are schematic in nature and their shapes are not intended to illustrate the actual shape of a region of a device and are not intended to limit the scope of exemplary embodiments.
The technical solution of the present invention will be described in detail below with reference to the embodiments and the accompanying drawings.
Fig. 1 to 5 are schematic structural diagrams corresponding to steps of an image sensor forming method in embodiment 1 of the present invention.
The method for manufacturing the image sensor comprises the following steps: providing a semiconductor substrate 22 formed with photodiodes 21, the semiconductor substrate 22 comprising different pixel regions 20, wherein the photodiodes correspond to the different pixel regions; forming an insulating structure on the semiconductor substrate; forming a light shielding film 27 on the insulating structure, the light shielding film 27 partially covering the insulating structure and isolating the different pixel regions 20; forming a color filter layer 25 corresponding to different pixels on the insulating structure at the corresponding position of each pixel region, wherein the color filter layer 25 comprises a white color filter layer 25W; forming an organic photodiode 28 partially blocking the white color filter layer over the white color filter layer; a microlens 26 is formed above the color filter layer 25 at a corresponding position of each pixel region.
Referring to fig. 1, a semiconductor substrate 22 formed with photodiodes 21 is first provided, the semiconductor substrate 22 includes different pixel regions 20, and the photodiodes 21 correspond to the different pixel regions 20 and include different pixel units;
in this embodiment, the semiconductor substrate 22 may be a silicon substrate, or may also be germanium, silicon carbide, gallium arsenide, or indium gallium arsenide, or a silicon-on-insulator substrate, or a germanium-on-insulator substrate, or a substrate on which an epitaxial layer is grown. The semiconductor substrate 22 includes a photodiode for converting a received optical signal into an electrical signal. The semiconductor substrate 22 is divided into different pixel regions 20, for example, basic pixel units such as red, green, and blue pixels or other various pixel units such as a white pixel, as needed. When the pixel region is described in this embodiment, any one of the pixel regions may be referred to unless otherwise specified.
As shown in fig. 1, different photodiodes 21 correspond to different pixels, such as basic pixels of red, green, and blue pixels, or other various pixels such as white pixels, according to the division of the pixel region of the semiconductor substrate 22. In fig. 1, a green pixel, a white pixel, and a red pixel region are exemplarily shown for convenience of description.
The photodiodes may be arranged in a Bayer (Bayer) array in the semiconductor substrate 22, or may be arranged in any other array as necessary. In order to meet the requirement of thinning the total thickness of the semiconductor substrate 22, the positions of the respective photodiodes in the semiconductor substrate 22 are generally at substantially the same depth.
Subsequently, an insulating structure including more than one dielectric layer, a stacked structure formed by a plurality of dielectric layers, is formed on the light incident surface of the semiconductor substrate 22. On one hand, the insulating structure may include a high-k material layer for preventing dark current due to surface damage, wherein the high-k material layer has a dielectric constant k greater than 3.9, and the high-k material is, for example, hafnium dioxide; on the other hand, the insulation structure can also comprise an anti-reflection layer for preventing incident light from reflecting to form crosstalk; the insulating structure can also comprise an adhesion dielectric layer, so that the dielectric layers are better adhered; the insulating structure also serves to isolate the semiconductor substrate 22 from a light shielding film 27 formed later.
In fig. 1, an insulating structure formed by a first insulating layer 23 and a second insulating layer 24 is schematically illustrated, wherein the first insulating layer 23 may include any one or more of a high dielectric constant material layer, an anti-reflection layer or an adhesion layer, and the sequence of the layers and the selection of the material may be adjusted according to the requirements of the process design. The second insulating layer 24 may also include any one or more of a high dielectric constant material layer, an anti-reflection layer or an adhesion layer, and the sequence of the layers and the selection of the material may be adjusted according to the requirements of the process design.
Further, the insulating structure may be further stacked on the basis of the first insulating layer 23 and the second insulating layer 24. A process of forming the first insulating layer 23 or the second insulating layer 24 is, for example, a chemical vapor deposition process or the like.
Referring to fig. 2, a light-shielding film 27 is formed on the second insulating layer 24 constituting the insulating structure, and the light-shielding film 27 may be made of a metal, or a black color filter layer absorbing light, or may be formed of an electrode of an organic photoelectric conversion film. The light shielding film 27 covers the second insulating layer 24 and is disposed at a corresponding position between adjacent pixel regions, so that light from different pixel regions does not enter the photodiodes of other pixel regions.
In the present embodiment, the light shielding film 27 is used to isolate each color filter layer 25 to be formed later, and therefore, the present embodiment has a certain limitation on the thickness thereof, which is close to the thickness of the color filter layer 25 to be formed later, and in a preferred embodiment, the thickness thereof is about 400nm to 1000 nm.
The light shielding film 27 is preferably made of a metal material having a light shielding effect, such as tungsten, aluminum, or copper, and the light shielding film 27 is formed by, for example, chemical vapor deposition of a light shielding film material and selective etching, and then removing a portion of the light shielding film material corresponding to the photodiode position.
Referring to fig. 3, a color filter layer 25 corresponding to different pixels is formed on the second insulating layer 24 at a corresponding position of each pixel region, and the color filter layer 25 is isolated by the light shielding film 27; when the color filter layer 25 corresponds to different pixel regions, it may be formed in sequence as needed. In one embodiment of the present invention, a red color filter layer 25R, a white color filter layer 25W, and a green color filter layer 25G are sequentially formed according to the division of the corresponding pixel regions in the semiconductor substrate, respectively.
The color filter layer 25 passes light of a predetermined color corresponding to the pixel region 20, and the color filter layer 25 of the corresponding color is provided for each pixel region 20. That is, as shown in the figure, the red color filter 25R is provided for the red pixel cell region, and the green color filter 25G is provided for the green pixel cell 21G. Each color filter 25 is formed with a resin to which an organic pigment is added inside, and is designed to have a thickness of about 400nm to 1000nm, for example.
Referring to fig. 4, an organic photodiode 28 is disposed above a position corresponding to the white color filter layer 25W, and the organic photodiode 28 partially blocks the white color filter layer 25W.
In this embodiment, the organic photodiode 28 partially blocks the white color filter layer 25W, so that the light entering amount of the photodiode 21 can be reduced, and meanwhile, the organic photodiode 28 can also absorb white light, thereby improving the photoelectric conversion efficiency of the white light, and simultaneously reducing the electronic crosstalk of the photodiode.
The organic photodiode 28 may perform photoelectric conversion on light of a specific wavelength. In the present embodiment, the organic photodiode 28 performs photoelectric conversion on white light. In this embodiment, the relative position relationship between the organic photodiode 28 and the white color filter layer partially shielded by the organic photodiode 28 is not strictly limited, and in an actual process, according to the size of the area of the white color filter layer, the shielding area of the organic photodiode 28 on the white color filter layer can be adjusted as required to avoid the overflow phenomenon of the photogenerated carriers under the condition that the full-well capacity is satisfied and enough photogenerated carriers are generated.
In fig. 4, the organic photodiode 28 is only schematically shown above the white filter layer, and in practice, the organic photodiode 28 may be directly above the white filter layer. The manufacturing process comprises the following steps: a dielectric layer is directly formed on the color filter layer 25 and the light shielding film 27, and then the dielectric layer is etched until a part of the white filter layer 25W is exposed, and then an organic photodiode 28 partially covering the white filter layer 25W is formed in the dielectric layer. Of course, the organic photodiode 28 may not be in direct contact with the white filter layer, that is, other layers, such as one or more dielectric layers, may be disposed between the white filter layer and the organic photodiode according to the requirement.
Referring to fig. 5, a microlens 26 is formed on the color filter layer 25 at a corresponding position of each pixel region. In the present embodiment, the relative position of the microlens 26 in the image sensor is schematically shown, which corresponds to the position of the color filter layer 25, and is disposed directly above the color filter layer 25. Wherein the photodiode 28 is disposed between the microlens 26 and the white pixel region color filter layer 25W.
The microlens is used to collect light for each pixel unit, and is made of, for example, a polystyrene resin, an acrylic resin, or a copolymer resin of these resins. The process for forming the microlens can be any one of the existing microlens manufacturing processes, and details are not repeated herein.
In actual process, the microlens 26 may also be disposed directly above the organic photodiode 28 and directly contact the photodiode 28, or may not be in direct contact with the organic photodiode 28, that is, other film layers, such as one or more dielectric layers, may also be disposed between the microlens 26 and the organic photodiode as required.
In the method for manufacturing the image sensor, the organic photodiode partially shields the white color filter layer, so that the light entering amount of the photodiode can be reduced, meanwhile, the organic photodiode can also absorb white light, the photoelectric conversion efficiency of the white light is improved, the electronic crosstalk of the photodiode is reduced, and under the condition of dark light, the image quality of the image sensor is improved, and the sensitivity of the image sensor is also improved.
Example 2
The present embodiment provides an image sensor structure, including: a semiconductor substrate 22 formed with photodiodes, the semiconductor substrate 22 including different pixel regions 20, wherein the photodiodes correspond to the different pixel regions; an insulating structure on the semiconductor substrate; a light shielding film 27 on the insulating structure, the light shielding film 27 partially covering the insulating structure and isolating the different pixel regions 20; a color filter layer 25 on the insulating structure corresponding to different pixels, the color filter layer 25 including a white color filter layer 25W; an organic photodiode 28 located above the white color filter layer and partially shielding the white color filter layer; and a microlens 26 positioned over the color filter layer 25.
Referring to fig. 5, the semiconductor substrate 22 may be a silicon substrate, and may also be germanium, silicon carbide, gallium arsenide, or indium gallium arsenide, or a silicon-on-insulator substrate, or a germanium-on-insulator substrate, or a substrate on which an epitaxial layer is grown. The semiconductor substrate 22 includes a photodiode for converting a received optical signal into an electrical signal. The semiconductor substrate 22 is divided into different pixel regions 20, for example, basic pixel units such as red, green, and blue pixels or other various pixel units such as a white pixel, as needed. When the pixel region is described in this embodiment, any one of the pixel regions may be referred to unless otherwise specified.
As shown in fig. 5, different photodiodes 21 correspond to different pixels, such as basic pixels of red, green, and blue pixels, or other various pixels such as white pixels, according to the division of the pixel region of the semiconductor substrate 22. In fig. 5, a green pixel, a white pixel, and a red pixel region are exemplarily shown for convenience of description.
The photodiodes may be arranged in a Bayer (Bayer) array in the semiconductor substrate 22, or may be arranged in any other array as necessary. In order to meet the requirement of thinning the total thickness of the semiconductor substrate 22, the positions of the respective photodiodes in the semiconductor substrate 22 are generally at substantially the same depth.
The insulating structure comprises more than one dielectric layer and is a stack structure formed by a plurality of dielectric layers. On one hand, the insulating structure may include a high-k material layer for preventing dark current due to surface damage, wherein the high-k material layer has a dielectric constant k greater than 3.9, and the high-k material is, for example, hafnium dioxide; on the other hand, the insulation structure can also comprise an anti-reflection layer for preventing incident light from reflecting to form crosstalk; the insulating structure can also comprise an adhesion dielectric layer, so that the dielectric layers are better adhered; the insulating structure also serves to isolate the semiconductor substrate 22 from a light shielding film 27 formed later.
Fig. 5 schematically illustrates an insulating structure formed by a first insulating layer 23 and a second insulating layer 24, wherein the first insulating layer 23 may include any one or more of a high dielectric constant material layer, an anti-reflection layer or an adhesion layer, and the sequence of the layers and the selection of the material may be adjusted according to the requirements of the process design. The second insulating layer 24 may also include any one or more of a high dielectric constant material layer, an anti-reflection layer or an adhesion layer, and the sequence of the layers and the selection of the material may be adjusted according to the requirements of the process design. Further, the insulating structure may be further stacked on the basis of the first insulating layer 23 and the second insulating layer 24. A process of forming the first insulating layer 23 or the second insulating layer 24 is, for example, a chemical vapor deposition process or the like.
The light shielding film 27 may be made of a metal, or may be a black color filter layer that absorbs light, or may be formed of an electrode of an organic photoelectric conversion film. The light shielding film 27 covers the second insulating layer 24 and is disposed at a corresponding position between adjacent pixel regions, so that light from different pixel regions does not enter the photodiodes of other pixel regions.
In the present embodiment, the light shielding film 27 is used to isolate each color filter layer 25 to be formed later, and therefore, the present embodiment has a certain limitation on the thickness thereof, which is close to the thickness of the color filter layer 25 to be formed later, and in a preferred embodiment, the thickness thereof is about 400nm to 1000 nm. The light shielding film 27 is preferably made of a metal material having a light shielding effect, such as tungsten, aluminum, or copper, and the light shielding film 27 is formed by, for example, chemical vapor deposition of a light shielding film material and selective etching, and then removing a portion of the light shielding film material corresponding to the photodiode position.
The color filter layer 25 is positioned on the second insulating layer 24 corresponding to each pixel region and corresponds to different pixels, and the light shielding film 27 isolates the color filter layer 25; when the color filter layer 25 corresponds to different pixel regions, it may be formed in sequence as needed. In one embodiment of the present invention, a red color filter layer 25R, a white color filter layer 25W, and a green color filter layer 25G are sequentially formed according to the division of the corresponding pixel regions in the semiconductor substrate, respectively.
The color filter layer 25 passes light of a predetermined color corresponding to the pixel region 20, and the color filter layer 25 of the corresponding color is provided for each pixel region 20. That is, as shown in the figure, the red color filter 25R is provided for the red pixel cell region, and the green color filter 25G is provided for the green pixel cell 21G. Each color filter 25 is formed with a resin to which an organic pigment is added inside, and is designed to have a thickness of about 400nm to 1000nm, for example.
The organic photodiode 28 is disposed above a position corresponding to the white color filter layer 25W, and the organic photodiode 28 partially blocks the white color filter layer 25W. In this embodiment, the organic photodiode 28 partially blocks the white color filter layer 25W, so that the light entering amount of the photodiode 21 can be reduced, and meanwhile, the organic photodiode 28 can also absorb white light, thereby improving the photoelectric conversion efficiency of the white light, and simultaneously reducing the electronic crosstalk of the photodiode.
The organic photodiode 28 may perform photoelectric conversion on light of a specific wavelength. In the present embodiment, the organic photodiode 28 performs photoelectric conversion on white light.
In this embodiment, the relative position relationship between the organic photodiode 28 and the white color filter layer partially shielded by the organic photodiode 28 is not strictly limited, and in an actual process, according to the size of the area of the white color filter layer, the shielding area of the organic photodiode 28 on the white color filter layer can be adjusted as required to avoid the overflow phenomenon of the photogenerated carriers under the condition that the full-well capacity is satisfied and enough photogenerated carriers are generated.
In fig. 5, the organic photodiode 28 is only schematically shown above the white filter layer, and in practice, the organic photodiode 28 may be directly above the white filter layer. Of course, the organic photodiode 28 may not be in direct contact with the white filter layer, that is, other layers, such as one or more dielectric layers, may be disposed between the white filter layer and the organic photodiode according to the requirement.
Referring to fig. 5, the relative position of the micro-lenses 26 in the image sensor is only schematically shown, corresponding to the position of the color filter layer 25, and being arranged directly above the color filter layer 25. Wherein the photodiode 28 is disposed between the microlens 26 and the white pixel region color filter layer 25W.
The microlens is used to collect light for each pixel unit, and is made of, for example, a polystyrene resin, an acrylic resin, or a copolymer resin of these resins. The process for forming the microlens can be any one of the existing microlens manufacturing processes, and details are not repeated herein.
In actual process, the microlens 26 may also be disposed directly above the organic photodiode 28 and directly contact the photodiode 28, or may not be in direct contact with the organic photodiode 28, that is, other film layers, such as one or more dielectric layers, may also be disposed between the microlens 26 and the organic photodiode as required.
In the image sensor of this embodiment, the organic photodiode partially blocks the white color filter layer, so that the light incident amount of the photodiode can be reduced, and the organic photodiode can also absorb white light, thereby improving the photoelectric conversion efficiency of white light, and reducing the electronic crosstalk of the photodiode.
Although the present invention has been described with reference to the preferred embodiments, it is not intended to limit the present invention, and those skilled in the art can make modifications and variations of the present invention without departing from the spirit and scope of the present invention.
Claims (10)
1. An image sensor, comprising:
a semiconductor substrate on which a photodiode is formed, the semiconductor substrate including different pixel regions including a white pixel region and at least one of a red pixel region, a green pixel region, and a blue pixel region;
an insulating structure on the semiconductor substrate;
a light shielding film on the insulating structure to partially cover the insulating structure;
the color filter layers are positioned on the insulating structure and correspond to different pixels, each color filter layer comprises a white color filter layer, and the light shielding films isolate the color filter layers;
an organic photodiode located above the white color filter layer and partially shielding the white color filter layer;
and a micro lens positioned above the color filter layer.
2. The image sensor as claimed in claim 1, wherein the light shielding film is a metal material having a light shielding effect.
3. The image sensor of claim 2, wherein the light-shielding film material is tungsten, aluminum, or copper.
4. The image sensor as in claim 1, wherein the insulating structure is a stacked structure of multiple dielectric layers.
5. The image sensor as in claim 4, wherein the insulating structure comprises one or more of a high-k material layer, an anti-reflective layer, and an adhesion dielectric layer.
6. A method of fabricating an image sensor, comprising:
providing a semiconductor substrate formed with a photodiode, the semiconductor substrate including different pixel regions including a white pixel region and at least one of a red pixel region, a green pixel region, and a blue pixel region;
forming an insulating structure on the semiconductor substrate;
forming a light shielding film on the insulating structure to partially cover the insulating structure;
forming color filter layers corresponding to different pixels on an insulating structure, wherein the color filter layers comprise white color filter layers, and the insulating structure isolates the color filter layers of the different pixels;
forming an organic photodiode partially shielding the white color filter layer over the white color filter layer;
and forming a micro lens above the color filter layer at the corresponding position of each pixel region.
7. The method of claim 6, wherein the light-shielding film is a metal material having a light-shielding effect.
8. The method of manufacturing an image sensor according to claim 7, wherein the light shielding film material is tungsten, aluminum, or copper.
9. The method of claim 6, wherein the insulating structure is a stack of dielectric layers.
10. The method of claim 9, wherein the insulating structure comprises one or more of a high-k material layer, an anti-reflective layer, and an adhesion dielectric layer.
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Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1992313A (en) * | 2005-12-28 | 2007-07-04 | 东部电子股份有限公司 | Image sensor and method of manufacturing the same |
| CN101246896A (en) * | 2007-02-13 | 2008-08-20 | 三星电子株式会社 | Image sensor devices having light blocking layers and methods of fabricating the same |
Family Cites Families (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009081169A (en) * | 2007-09-25 | 2009-04-16 | Fujifilm Corp | Solid-state image sensor |
| TWI620445B (en) * | 2013-03-25 | 2018-04-01 | Sony Corp | Camera element and electronic equipment |
-
2018
- 2018-08-21 CN CN201810952046.1A patent/CN109273480B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1992313A (en) * | 2005-12-28 | 2007-07-04 | 东部电子股份有限公司 | Image sensor and method of manufacturing the same |
| CN101246896A (en) * | 2007-02-13 | 2008-08-20 | 三星电子株式会社 | Image sensor devices having light blocking layers and methods of fabricating the same |
| JP2008198993A (en) * | 2007-02-13 | 2008-08-28 | Samsung Electronics Co Ltd | Image sensor element and its manufacturing method |
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