CN109616488A - Cmos image sensor and its manufacturing method - Google Patents
Cmos image sensor and its manufacturing method Download PDFInfo
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- CN109616488A CN109616488A CN201811477024.0A CN201811477024A CN109616488A CN 109616488 A CN109616488 A CN 109616488A CN 201811477024 A CN201811477024 A CN 201811477024A CN 109616488 A CN109616488 A CN 109616488A
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- 238000004519 manufacturing process Methods 0.000 title claims abstract description 13
- 230000003287 optical effect Effects 0.000 claims abstract description 40
- 239000011253 protective coating Substances 0.000 claims abstract description 25
- 230000005540 biological transmission Effects 0.000 claims abstract description 9
- 230000001965 increasing effect Effects 0.000 claims abstract description 9
- 239000010410 layer Substances 0.000 claims description 20
- 239000002184 metal Substances 0.000 claims description 19
- 239000000758 substrate Substances 0.000 claims description 16
- 239000004065 semiconductor Substances 0.000 claims description 14
- 239000011347 resin Substances 0.000 claims description 12
- 229920005989 resin Polymers 0.000 claims description 12
- 238000005530 etching Methods 0.000 claims description 9
- 229920002120 photoresistant polymer Polymers 0.000 claims description 9
- 239000011229 interlayer Substances 0.000 claims description 8
- 238000000034 method Methods 0.000 claims description 8
- 239000000463 material Substances 0.000 claims description 7
- 238000001259 photo etching Methods 0.000 claims description 6
- 229920000058 polyacrylate Polymers 0.000 claims description 5
- 206010034972 Photosensitivity reaction Diseases 0.000 claims 1
- 239000004020 conductor Substances 0.000 claims 1
- 230000036211 photosensitivity Effects 0.000 claims 1
- 238000010992 reflux Methods 0.000 claims 1
- 239000002344 surface layer Substances 0.000 claims 1
- 230000000694 effects Effects 0.000 abstract description 7
- 230000006872 improvement Effects 0.000 description 14
- 238000006243 chemical reaction Methods 0.000 description 7
- 238000005286 illumination Methods 0.000 description 5
- 238000003384 imaging method Methods 0.000 description 5
- 239000003086 colorant Substances 0.000 description 3
- 230000005622 photoelectricity Effects 0.000 description 3
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
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- 239000011159 matrix material Substances 0.000 description 2
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
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- JEIPFZHSYJVQDO-UHFFFAOYSA-N iron(III) oxide Inorganic materials O=[Fe]O[Fe]=O JEIPFZHSYJVQDO-UHFFFAOYSA-N 0.000 description 1
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- 230000003014 reinforcing effect Effects 0.000 description 1
- 230000035945 sensitivity Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14643—Photodiode arrays; MOS imagers
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/1462—Coatings
- H01L27/14621—Colour filter arrangements
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14601—Structural or functional details thereof
- H01L27/14625—Optical elements or arrangements associated with the device
- H01L27/14627—Microlenses
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- H—ELECTRICITY
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
- H01L27/14683—Processes or apparatus peculiar to the manufacture or treatment of these devices or parts thereof
- H01L27/14685—Process for coatings or optical elements
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Abstract
The invention discloses a kind of cmos image sensors, comprising: bottom structure is formed with multiple optical filters on bottom structure；The type of optical filter includes red filter, green filter and blue filter；It is formed with protective coating on the filter；Lenticule is provided in protective coating; a lenticule is both provided with above corresponding optical filter; lenticule at the top of red, green and blue light device is respectively the first to three lenticule; the height of second lenticule be greater than first and three lenticule height; the transmission channel for being increased green light using the difference in height of the second lenticule and the first lenticule and third lenticule and the height by increasing by the second lenticule is reinforced the utilization to green light and thereby improves the signal-to-noise ratio of pixel.The invention also discloses a kind of manufacturing methods of cmos image sensor.The present invention can improve the signal-to-noise ratio of device, reduce crosstalk effect.
Description
Technical field
The present invention relates to semiconductor integrated circuit manufacturing fields, more particularly to a kind of cmos image sensor (CIS).This
Invention further relates to a kind of manufacturing method of cmos image sensor.
Background technique
The 1970s, ccd image sensor and cmos image sensor are started to walk simultaneously.Ccd image sensor due to
High sensitivity, noise are low, gradually become the mainstream of imaging sensor.But due to technologic, at sensing element and signal
Reason circuit cannot integrate cause to be assembled by ccd image sensor on the same chip video camera volume is big, power consumption is big.CMOS
Imaging sensor is with its integrated level height, and power is low, and the advantages such as at low cost are more and more widely used.
Existing cmos image sensor includes that CMOS digital-to-analog circuit and pixel unit circuit array are constituted, according to one
The number of transistor included by pixel unit circuit, existing cmos image sensor are divided into 3T type structure and 4T type structure, go back
There can be 5T type structure.The pixel unit circuit is to carry out photovoltaic reaction by photodiode to realize the photon of acquisition turn
It is changed to electronics, the electronics for converting formation forms circuit reading finally by by transistor.In CIS device, transistor is used
CMOS tube such as PMOS tube or NMOS tube.
In general, the photodiode and transistor of CIS device are all integrated on semiconductor substrate such as silicon substrate simultaneously, photoelectricity
The setting area of diode is photosensitive area, and transistor is in the non-photosensitive area being arranged in outside photosensitive area.If the face of photosensitive area
Product is big, then the light that CIS device can acquire can be more, can finally improve in this way quantum efficiency (QuantumEfficiency,
QE).But due to the needs of circuit, setting area, that is, non-photosensitive area of transistor cannot infinitely reduce, thus the QE of CIS by
The limitation of the area of non-photosensitive area.
In order to further increase the QE of CIS device, existing method under the adjusting that the area by non-photosensitive area is limited
In use lenticule (Micro-lens) can since lenticule is covered on the surface of each photodiode of photosensitive area
The light of non-photosensitive area is converged in photosensitive area, to improve the QE of CIS device.
There is film layer structure, such as thicker interlayer film, chromatic filter battle array between lenticule and the surface of photodiode
Column and protective coating etc..Chromatic filter generally uses three colors (RGB) i.e. red (R), green (G) and blue (B) optical filter.
In addition, cmos image sensor relies on low power consumption and low cost small size and can with the raising of CMOS technology level
The series of advantages such as random reading, realize the extensive use in field of consumer electronics such as tablet computer smart phones.Crosstalk
(Crosstalk) be photodiode array an important noise source, crosstalk effect usually can in cmos image sensor
The problem of encountering but being not easily solved.In cmos image sensors, crosstalk effect is mainly due to referring in a pixel
Signal to coupling influence caused by other pixels, interference that essence, which is a signal, generates the coupling of another signal
Noise.Crosstalk it is more and more prominent with the smaller and smaller performance of process node.Micro-lens array structure is to improve crosstalk
Effect improves the mode of signal-to-noise ratio.As shown in Figure 1, be the structure chart of the lenticule 103 of existing cmos image sensor, it is existing
Cmos image sensor includes:
Bottom structure (not shown) is formed with multiple optical filters 101 on the bottom structure.
Include the photodiode and transistor being formed in semiconductor substrate surface in the bottom structure, is formed in institute
State the front metal layer above semiconductor substrate surface and the interlayer film between the front metal layer.
The photodiode is located in photosensitive area, and the transistor is located in non-photosensitive area and forms cmos circuit knot
Structure.
The front metal layer is located at the surface of the non-photosensitive area.Subsequent lenticule 103 is located at the photosensitive area
With the top of the non-photosensitive area, by the lenticule 103 by the light of the photosensitive area and at least partly described non-photosensitive area
It converges in the corresponding photodiode in the photosensitive area.
The type of the optical filter 101 includes red filter 101a, green filter 101b and blue filter 101c.
In general, the optical filter 101 is formed using negativity photoresist such as acrylic polymer.
Protective coating 102 is formed on the optical filter 101.
The surface of the protective coating 102 is flat.
Lenticule 103 is provided in the protective coating 102.In general, the material of the lenticule 103 is transparent tree
Rouge.In the prior art, the lenticule at the top of red filter 101a, green filter 101b and blue filter 101c
103 height is all equal, shown in d101 as shown in figure 1.
Summary of the invention
Technical problem to be solved by the invention is to provide a kind of cmos image sensors, can improve the signal-to-noise ratio of device,
Reduce crosstalk effect.For this purpose, the present invention also provides a kind of manufacturing methods of cmos image sensor.
In order to solve the above technical problems, cmos image sensor provided by the invention includes:
Bottom structure is formed with multiple optical filters on the bottom structure.
The type of the optical filter includes red filter, green filter and blue filter.
Protective coating is formed on the optical filter.
It is provided with lenticule in the protective coating, is both provided with described in one above the corresponding optical filter
Lenticule, the lenticule at the top of the red green light device is the first lenticule, described micro- at the top of the green green light device
Lens are the second lenticule, and the lenticule at the top of the blue green light device is third lenticule, second lenticule
Height is greater than the height of first lenticule and the height of second lenticule is greater than the height of the third lenticule,
Using the difference in height of second lenticule and first lenticule and the third lenticule and by increasing described the
The height of two lenticules increases the transmission channel of green light, reinforces the utilization to green light and thereby improves the signal-to-noise ratio of pixel.
A further improvement is that the bottom structure include the photodiode that is formed in semiconductor substrate surface and
Transistor, the front metal layer being formed in above the semiconductor substrate surface and the interlayer between the front metal layer
Film.
A further improvement is that the photodiode is located in photosensitive area, the transistor is located in non-photosensitive area simultaneously
Form cmos circuit structure.
A further improvement is that the front metal layer is located at the surface of the non-photosensitive area.
A further improvement is that the lenticule is located at the top of the photosensitive area and the non-photosensitive area, by described
The light of the photosensitive area and at least partly described non-photosensitive area is converged to the corresponding photoelectricity two in the photosensitive area by lenticule
In pole pipe.
A further improvement is that the optical filter is formed using negativity photoresist.
A further improvement is that the negativity photoresist for forming the optical filter includes acrylic polymer.
A further improvement is that the surface of the protective coating is flat.
A further improvement is that the material of the lenticule is transparent resin.
A further improvement is that the height of first lenticule is equal to the height of the third lenticule.
In order to solve the above technical problems, the manufacturing method of cmos image sensor provided by the invention includes the following steps:
Step 1: providing bottom structure, multiple optical filters are formed on the bottom structure.
The type of the optical filter includes red filter, green filter and blue filter.
Step 2: forming protective coating on the optical filter.
Step 3: forming lenticule in the protective coating, one is both provided with above the corresponding optical filter
A lenticule, the lenticule at the top of the red green light device is the first lenticule, at the top of the green green light device
The lenticule is the second lenticule, and the lenticule at the top of the blue green light device is third lenticule, and described second is micro-
The height of lens is greater than the height of first lenticule and the height of second lenticule is greater than the third lenticule
Height, using the difference in height of second lenticule and first lenticule and the third lenticule and pass through increase
The height of second lenticule increases the transmission channel of green light, reinforces the utilization to green light and thereby improves the noise of pixel
Than.
A further improvement is that the material of the lenticule is transparent resin.
A further improvement is that step 3 include it is following step by step:
Step 31 forms the transparent resin in the protective coating.
Step 32, to add the technique to the etching of the transparent resin to sequentially form described first using lithographic definition micro-
Mirror, second lenticule and the third lenticule.
Step 33, flow back makes first lenticule, second lenticule and the third lenticule in protrusion
Structure.
A further improvement is that the height of first lenticule is equal to the height of the third lenticule, in step 32
First lenticule and the third lenticule are used adds etching technics to be formed simultaneously with a photoetching, second lenticule
Etching technics is added to be formed using another secondary photoetching.
A further improvement is that the bottom structure include the photodiode that is formed in semiconductor substrate surface and
Transistor, the front metal layer being formed in above the semiconductor substrate surface and the interlayer between the front metal layer
Film.
The present invention has carried out special setting to the lenticule of cmos image sensor, right in entire microlens array
The height of the second lenticule at the top of green filter is increased, and such second lenticule will be protruded in red filter
The top of third lenticule at the top of first lenticule and blue electric-wave filter at top, can make the light-receiving surface of the second lenticule in this way
Product increases, to will increase the transmission channel of green light, reinforces the utilization to green light；In addition, feux rouges, green light and blue light these three
In the light of color, human eye is the sensitiveest to the reaction of green light, weaker to the reaction of blue light and feux rouges, green light to the contribution of image quality most
Greatly, this but also green light is maximum to the contribution of the signal-to-noise ratio of device, the present invention can increase device by reinforcing the utilization to green light
Signal-to-noise ratio, more meet requirement of the human eye to image quality, crosstalk effect can be reduced.
Detailed description of the invention
The present invention will be further described in detail below with reference to the accompanying drawings and specific embodiments:
Fig. 1 is the structure chart of the lenticule of existing cmos image sensor；
Fig. 2 is the structure chart of the lenticule of cmos image sensor of the embodiment of the present invention.
Specific embodiment
As shown in Fig. 2, being the structure chart of the lenticule 3 of cmos image sensor of the embodiment of the present invention, the embodiment of the present invention
Cmos image sensor includes:
Bottom structure (not shown) is formed with multiple optical filters 1 on the bottom structure.
In the embodiment of the present invention, the bottom structure include the photodiode that is formed in semiconductor substrate surface and
Transistor, the front metal layer being formed in above the semiconductor substrate surface and the interlayer between the front metal layer
Film.
The photodiode is located in photosensitive area, and the transistor is located in non-photosensitive area and forms cmos circuit knot
Structure.
The front metal layer is located at the surface of the non-photosensitive area.Subsequent lenticule 3 be located at the photosensitive area and
The light of the photosensitive area and at least partly described non-photosensitive area is converged by the lenticule 3 in the top of the non-photosensitive area
Into the corresponding photodiode in the photosensitive area.
The type of the optical filter 1 includes red filter 1a, green filter 1b and blue filter 1c.
The optical filter 1 is formed using negativity photoresist.
The negativity photoresist for forming the optical filter 1 includes acrylic polymer.
Protective coating 2 is formed on the optical filter 1.
The surface of the protective coating 2 is flat.
It is provided with lenticule 3 in the protective coating 2, is both provided with one in the top of the corresponding optical filter 1
The lenticule 3, the lenticule 3 at the top of the red green light device are the first lenticule 3a, at the top of the green green light device
The lenticule 3 be the second lenticule 3b, the lenticule 3 at the top of the blue green light device is third lenticule 3c, institute
State height i.e. d2 and the second lenticule 3b of the height i.e. d1 greater than the first lenticule 3a of the second lenticule 3b
Height is greater than the height of the third lenticule 3c, utilizes the second lenticule 3b and the first lenticule 3a and described
The difference in height of third lenticule 3c and the height by increasing the second lenticule 3b increase the transmission channel of green light, reinforcement pair
The utilization of green light and thereby the signal-to-noise ratio for improving pixel.
In the embodiment of the present invention, the material of the lenticule 3 is transparent resin.
The height of the first lenticule 3a is equal to the height of the third lenticule 3c, i.e., is all d2.
The embodiment of the present invention has carried out special setting to the lenticule 3 of cmos image sensor, at 3 gusts of entire lenticule
In column, the height of the second lenticule 3b at the top of green filter 1b is increased, such second lenticule 3b will dash forward
The top of third lenticule 3c at the top of the first lenticule 3a and blue electric-wave filter at the top of red filter out, can make in this way
The light-receiving area of second lenticule 3b increases, to will increase the transmission channel of green light, reinforces the utilization to green light；In addition,
Feux rouges, green light and blue light these three colors light in, human eye is the sensitiveest to the reaction of green light, to the reaction of blue light and feux rouges compared with
Weak, green light is maximum to the contribution of image quality, and, but also green light is maximum to the contribution of the signal-to-noise ratio of device, the embodiment of the present invention passes through for this
Reinforce the utilization to green light, can increase the signal-to-noise ratio of device, more meet requirement of the human eye to image quality, crosstalk effect can be reduced.
The principle for increasing signal-to-noise ratio by enhancing the application to green light is utilized to be described below the embodiment of the present invention:
Due to human eye be to the reaction of green light it is most sensitive, to blue light and feux rouges reaction it is weaker therefore preferable in order to reach
Image quality will reinforce green light contribution.It does not share the same light i.e. pixel (Pixel) signal-to-noise ratio (SNR10) of R, G and B for imaging sensor
Contribution is different, and the effective rate of utilization for improving green light can effectively improve signal-to-noise ratio.As sensing Pixel Signal to Noise Ratio (SNR) 10
It can be calculated by following formula:
SNR10=LR*SCCM (R)+LG*SCCM (G)+LB*SCCM (B)；
Wherein, LR is the illumination tensor of feux rouges, and LG is the illumination tensor of green light, and LB is the illumination tensor of blue light, illumination system
Number LR=0.299, LG=0.587, LB=0.114, SCCM (R) is feux rouges correlation matrix coefficient, and SCCM (G) is green light Correlation Moment
Battle array coefficient, SCCM (B) are blue light correlation matrix coefficient, it can be seen that the value of LG is maximum, so influence of the green light to signal-to-noise ratio is most
Greatly.The ratio for reaching satisfactory various colors is one of performance of imaging sensor, by green Region Micro-
Lens height increases, while remains unchanged feux rouges and the Micro-lens of blue light region height,, can increase the biography of green light
Defeated channel is reinforced utilizing green light, so that imaging sensor signal-to-noise ratio under ground illumination is stronger, more meets human eye and want to image quality
It asks.
The manufacturing method of cmos image sensor of the embodiment of the present invention includes the following steps:
Step 1: providing bottom structure, multiple optical filters 1 are formed on the bottom structure.
It include two pole of photoelectricity being formed in semiconductor substrate surface in the bottom structure in present invention method
Pipe and transistor, the front metal layer being formed in above the semiconductor substrate surface and between the front metal layer
Interlayer film.
The photodiode is located in photosensitive area, and the transistor is located in non-photosensitive area and forms cmos circuit knot
Structure.
The front metal layer is located at the surface of the non-photosensitive area.Subsequent lenticule 3 be located at the photosensitive area and
The light of the photosensitive area and at least partly described non-photosensitive area is converged by the lenticule 3 in the top of the non-photosensitive area
Into the corresponding photodiode in the photosensitive area.
The type of the optical filter 1 includes red filter 1a, green filter 1b and blue filter 1c.
The optical filter 1 is formed using negativity photoresist.
The negativity photoresist for forming the optical filter 1 includes acrylic polymer.
Step 2: forming protective coating 2 on the optical filter 1.
The surface of the protective coating 2 is flat.
Step 3: forming lenticule 3 in the protective coating 2, it is both provided in the top of the corresponding optical filter 1
One lenticule 3, the lenticule 3 at the top of the red green light device is the first lenticule 3a, the green green light device
The lenticule 3 at top is the second lenticule 3b, and the lenticule 3 at the top of the blue green light device is third lenticule
The height of height of the height of 3c, the second lenticule 3b greater than the first lenticule 3a and the second lenticule 3b
Greater than the height of the third lenticule 3c, the second lenticule 3b and the first lenticule 3a and the third are utilized
The difference in height of lenticule 3c and the height by increasing the second lenticule 3b increase the transmission channel of green light, reinforce to green light
Utilization and thereby improve pixel signal-to-noise ratio.
The material of the lenticule 3 is transparent resin.Step 3 include it is following step by step:
Step 31 forms the transparent resin in the protective coating 2.
Step 32 adds the technique to the etching of the transparent resin to sequentially form first lenticule using lithographic definition
3a, the second lenticule 3b and the third lenticule 3c.
In present invention method, the height of the first lenticule 3a is equal to the height of the third lenticule 3c,
First lenticule 3a described in the step 32 and third lenticule 3c is used adds etching technics to be formed simultaneously with a photoetching, institute
It states the second lenticule 3b and adds etching technics to be formed using another secondary photoetching.
Step 33, flow back makes the first lenticule 3a, the second lenticule 3b and the third lenticule 3c
In the structure of protrusion.
The present invention has been described in detail through specific embodiments, but these are not constituted to limit of the invention
System.Without departing from the principles of the present invention, those skilled in the art can also make many modification and improvement, these are also answered
It is considered as protection scope of the present invention.
Claims (15)
1. a kind of cmos image sensor characterized by comprising
Bottom structure is formed with multiple optical filters on the bottom structure；
The type of the optical filter includes red filter, green filter and blue filter；
Protective coating is formed on the optical filter；
Be provided with lenticule in the protective coating, be both provided with above the corresponding optical filter one it is described micro-
Mirror, the lenticule at the top of the red green light device is the first lenticule, the lenticule at the top of the green green light device
For the second lenticule, the lenticule at the top of the blue green light device is third lenticule, the height of second lenticule
Greater than the height that the height of first lenticule and the height of second lenticule are greater than the third lenticule, utilize
The difference in height of second lenticule and first lenticule and the third lenticule is simultaneously micro- by increasing described second
The height of lens increases the transmission channel of green light, reinforces the utilization to green light and thereby improves the signal-to-noise ratio of pixel.
2. cmos image sensor as described in claim 1, it is characterised in that: partly led in the bottom structure including being formed in
Photodiode and transistor in body substrate surface, the front metal layer being formed in above the semiconductor substrate surface and position
Interlayer film between the front metal layer.
3. cmos image sensor as claimed in claim 2, it is characterised in that: the photodiode is located in photosensitive area,
The transistor is located in non-photosensitive area and forms cmos circuit structure.
4. cmos image sensor as claimed in claim 3, it is characterised in that: the front metal layer is located at the non-photosensitivity
The surface in area.
5. the manufacturing method of the interior lens of CIS as claimed in claim 3, it is characterised in that: the lenticule is located at described
The top of photosensitive area and the non-photosensitive area, by the lenticule by the photosensitive area and at least partly described non-photosensitive area
Light converges in the corresponding photodiode in the photosensitive area.
6. cmos image sensor as described in claim 1, it is characterised in that: the optical filter uses negativity photoresist shape
At.
7. cmos image sensor as claimed in claim 6, it is characterised in that: form the negativity photoresist of the optical filter
Including acrylic polymer.
8. cmos image sensor as described in claim 1, it is characterised in that: the surface of the protective coating is flat.
9. cmos image sensor as described in claim 1, it is characterised in that: the material of the lenticule is transparent resin.
10. cmos image sensor as described in claim 1, it is characterised in that: the height of first lenticule is equal to institute
State the height of third lenticule.
11. a kind of manufacturing method of cmos image sensor, which comprises the steps of:
Step 1: providing bottom structure, multiple optical filters are formed on the bottom structure；
The type of the optical filter includes red filter, green filter and blue filter；
Step 2: forming protective coating on the optical filter；
Step 3: forming lenticule in the protective coating, an institute is both provided with above the corresponding optical filter
Lenticule is stated, the lenticule at the top of the red green light device is the first lenticule, described at the top of the green green light device
Lenticule is the second lenticule, and the lenticule at the top of the blue green light device is third lenticule, second lenticule
Height be greater than first lenticule height and second lenticule height be greater than the third lenticule height
Degree, using the difference in height of second lenticule and first lenticule and the third lenticule and by described in increase
The height of second lenticule increases the transmission channel of green light, reinforces the utilization to green light and thereby improves the signal-to-noise ratio of pixel.
12. the manufacturing method of cmos image sensor as claimed in claim 11, it is characterised in that: the material of the lenticule
For transparent resin.
13. the manufacturing method of cmos image sensor as claimed in claim 12, it is characterised in that: step 3 includes following point
Step:
Step 31 forms the transparent resin in the protective coating；
Step 32 adds the technique to the etching of the transparent resin to sequentially form first lenticule, institute using lithographic definition
State the second lenticule and the third lenticule；
Step 33 carries out the knot that reflux makes first lenticule, second lenticule and the third lenticule in protrusion
Structure.
14. the manufacturing method of cmos image sensor as claimed in claim 13, it is characterised in that: first lenticule
Height is equal to the height of the third lenticule, and the first lenticule described in step 32 and the third lenticule are used with primary
Photoetching adds etching technics to be formed simultaneously, and second lenticule adds etching technics to be formed using another secondary photoetching.
15. cmos image sensor as described in claim 1, it is characterised in that: in the bottom structure including being formed in half
Photodiode and transistor in conductor substrate surface, be formed in front metal layer above the semiconductor substrate surface and
Interlayer film between the front metal layer.
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| CN201811477024.0A CN109616488A (en) | 2018-12-05 | 2018-12-05 | Cmos image sensor and its manufacturing method |
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| CN102142446A (en) * | 2010-02-01 | 2011-08-03 | 奇景光电股份有限公司 | Method of fabricating image sensor and image sensor thereof |
| CN104051484A (en) * | 2013-03-15 | 2014-09-17 | 全视科技有限公司 | Image sensor with pixels having increased optical crosstalk and applications thereof |
| CN108269815A (en) * | 2018-01-10 | 2018-07-10 | 德淮半导体有限公司 | Cmos image sensor and forming method thereof |
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Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102142446A (en) * | 2010-02-01 | 2011-08-03 | 奇景光电股份有限公司 | Method of fabricating image sensor and image sensor thereof |
| CN104051484A (en) * | 2013-03-15 | 2014-09-17 | 全视科技有限公司 | Image sensor with pixels having increased optical crosstalk and applications thereof |
| CN108269815A (en) * | 2018-01-10 | 2018-07-10 | 德淮半导体有限公司 | Cmos image sensor and forming method thereof |
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