CN106584968A - Graphene composite material high in heat dissipation property - Google Patents

Graphene composite material high in heat dissipation property Download PDF

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Publication number
CN106584968A
CN106584968A CN201611235908.6A CN201611235908A CN106584968A CN 106584968 A CN106584968 A CN 106584968A CN 201611235908 A CN201611235908 A CN 201611235908A CN 106584968 A CN106584968 A CN 106584968A
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CN
China
Prior art keywords
support
support ring
thickness
composite material
reaction cavity
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Pending
Application number
CN201611235908.6A
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Chinese (zh)
Inventor
杨云胜
杨星
郭颢
蒋伟良
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Zhenjiang Bo Hao Science And Technology Ltd
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Zhenjiang Bo Hao Science And Technology Ltd
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Priority to CN201611235908.6A priority Critical patent/CN106584968A/en
Publication of CN106584968A publication Critical patent/CN106584968A/en
Pending legal-status Critical Current

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    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B9/00Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00
    • B32B9/005Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising one layer of ceramic material, e.g. porcelain, ceramic tile
    • B32B9/007Layered products comprising a layer of a particular substance not covered by groups B32B11/00 - B32B29/00 comprising one layer of ceramic material, e.g. porcelain, ceramic tile comprising carbon, e.g. graphite, composite carbon
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/10Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by the pressing technique, e.g. using action of vacuum or fluid pressure
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00Ancillary operations in connection with laminating processes
    • B32B38/18Handling of layers or the laminate
    • B32B38/1808Handling of layers or the laminate characterised by the laying up of the layers
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00Properties of the layers or laminate
    • B32B2307/30Properties of the layers or laminate having particular thermal properties
    • B32B2307/302Conductive
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment

Abstract

The invention relates to a graphene composite material high in heat dissipation property. A preparation method of the material includes the steps that firstly, a SiC substrate is placed in a chemical vapor deposition reaction cavity, the absolute vacuum degree of the chemical vapor deposition reaction cavity is controlled to be larger than 104 Pa, and a silicon carbide epitaxial layer with the thickness of 4-8 micrometers grows on the surface of the SiC substrate at 1200-1400 DEG C; secondly, the temperature of the chemical vapor deposition reaction cavity is controlled to be reduced to 1000 DEG C, and then increased to 1600 DEG C in the inert gas atmosphere, so that the structure of the silicon carbide epitaxial layer is decomposed and reconstructed, and a multi-layer graphene membrane is obtained on the SiC substrate; thirdly, the multi-layer graphene membrane is stripped, at least two layers of multi-layer graphene membranes are stacked and pressed, and the graphene composite material can be obtained. The material is good in flexibility and good in heat dissipation property, and the service life is greatly prolonged.

Description

A kind of high heat dispersion graphene composite material
Technical field
The present invention relates to a kind of graphene composite material, and in particular to a kind of high heat dispersion graphene composite material.
Background technology
Graphite is a kind of allotrope of elemental carbon, and the periphery of each carbon atom links and writes the other three carbon atom (row Row mode is in cellular multiple hexagons) with Covalent bonding together, constitute covalent molecule.Graphite belongs to typical layer structure, Carbon atom aligned in layers, is equidistantly connected between each carbon and adjacent carbon, and the carbon in each layer presses the arrangement of hexagonal ring shape, up and down phase The carbon hexagonal ring of adjacent bed is stacked after the mutual displacement in parallel wire side direction again and forms layer structure.Due to its special construction, stone Ink has heat-resisting quantity, electric conductivity, heat conductivity, lubricity, chemical stability, plasticity and thermal shock resistance etc., can be used as resistance to Fiery material, lubriation material, conductive heat conducting material etc. are applied in the industry such as metallurgy, chemical industry, machinery, electronics, atomic energy and national defence. Its heat conductivity exceedes the metal materials such as steel, ferrum, lead.But heat conductivity is raised with temperature and reduced, at very high temperatures, graphite Can be with into insulator.Graphite film material surmounts the heat conductivility of metal material because of having, also with as organic plasticss Plasticity, and the characteristic of the surface of solids can be coated in, in all electronical display products if desired for radiating and need heating Electronic devices and components field is obtained for and is widely applied.
Existing graphite film simple structure, toughness be not good, for a long time using easy fracture, it is impossible to ensures service life, also can Affect effect of product.
The content of the invention
The present invention proposes a kind of high heat dispersion graphene composite material for the problems referred to above, and pliability is good, radiating effect It is really good, service life greatly improved.
Specific technical scheme is as follows:
A kind of high heat dispersion graphene composite material, its preparation method is:
(1) SiC substrates are placed in chemical vapour deposition reaction cavity, control the absolute of chemical vapour deposition reaction cavity Vacuum is more than 104 handkerchiefs, grows the silicon carbide epitaxial layers of 4-8 microns at 1200-1400 DEG C in SiC substrate surfaces;
(2) temperature for controlling chemical vapour deposition reaction cavity is reduced to 1000 DEG C, to chemistry under atmosphere of inert gases Cvd chamber body is heated to 1600 DEG C from 1000 DEG C, makes silicon carbide epitaxial layers STRUCTURE DECOMPOSITION and restructuring, in SiC bases Multi-layer graphene film is obtained on bottom;
(3) multi-layer graphene film is peeled off, is overlapped mutually using the multi-layer graphene film of at least two-layer, pressing and forming Obtain graphene composite material.
A kind of above-mentioned high heat dispersion graphene composite material, wherein, two are provided with the graphene composite material One support bar and second support bar, second support bar are arranged between two the first support bars, and described first supports Bar includes two the first support feets and the first support ring being fixed between the first support feet, and the cross sectional shape of the first support ring is Arc-shaped structure, the thickness of the first support ring are gradually reduced from both sides to centre, and the outermost thickness of the first support ring is h3, the The thickness of one support ring center is h4, h3=1.5*h4;Second support bar includes two the second support feets and is fixed on The second support ring between second support feet, the cross sectional shape of the second support ring is arc-shaped structure, the thickness of the second support ring Gradually increase from both sides to centre, the outermost thickness of the second support ring is h5, and the thickness of the second support ring center is h6, h6 =1.5*h5;The opening direction of first support ring is contrary with the opening direction of the second support ring.
Beneficial effects of the present invention are:
Multiple multi-layer graphene films are laminated fixation by the present invention, it is fixed more firmly, Graphene effect propety is splendid Heat sink material, serve radiating effect well, realize quick conductive, production efficiency greatly improved, reduce cost, Have wide range of applications, can be widely used for equipment cooling.
Description of the drawings
Fig. 1 is sectional view of the present invention.
Fig. 2 is the first support bar structure chart of the invention.
Fig. 3 is the second support bar structure chart of the invention.
Specific embodiment
To make technical scheme become apparent from clearly, the present invention is described further below in conjunction with the accompanying drawings, Any technical characteristic to technical solution of the present invention carries out the scheme that equivalencing and conventional reasoning draw and each falls within guarantor of the present invention Shield scope.
Reference
Multi-layer graphene film 1, the first support bar 2, the second support bar 3, the first support feet 4, the first support ring 5, second Spike 6, the second support ring 7.
Embodiment one:
A kind of high heat dispersion graphene composite material as shown in the figure, its preparation method is:
(1) SiC substrates are placed in chemical vapour deposition reaction cavity, control the absolute of chemical vapour deposition reaction cavity Vacuum is more than 104 handkerchiefs, grows the silicon carbide epitaxial layers of 4-8 microns at 1200-1400 DEG C in SiC substrate surfaces;
(2) temperature for controlling chemical vapour deposition reaction cavity is reduced to 1000 DEG C, to chemistry under atmosphere of inert gases Cvd chamber body is heated to 1600 DEG C from 1000 DEG C, makes silicon carbide epitaxial layers STRUCTURE DECOMPOSITION and restructuring, in SiC bases Multi-layer graphene film 1 is obtained on bottom;
(3) multi-layer graphene film is peeled off, two the first support bars 2 and second support bar 3 is placed on into two-layer many Between layer graphene film, the pressing and forming under the pressure of 1t.
Second support bar is arranged between two the first support bars, and first support bar includes two first supports Foot 4 and the first support ring 5 being fixed between the first support feet, the cross sectional shape of the first support ring is arc-shaped structure, first The thickness of support ring is gradually reduced from both sides to centre, the outermost thickness of the first support ring be h1, the first support ring center Thickness be h2, h1=1.5*h2;Second support bar includes two the second support feets 6 and is fixed between the second support feet The second support ring 7, the cross sectional shape of the second support ring is arc-shaped structure, the thickness of the second support ring from both sides to centre by Cumulative big, the outermost thickness of the second support ring is h3, and the thickness of the second support ring center is h4, h4=1.5*h3;It is described The opening direction of the first support ring is contrary with the opening direction of the second support ring.
Embodiment two
A kind of high heat dispersion graphene composite material, its preparation method is:
(1) SiC substrates are placed in chemical vapour deposition reaction cavity, control the absolute of chemical vapour deposition reaction cavity Vacuum is more than 104 handkerchiefs, grows the silicon carbide epitaxial layers of 4-8 microns at 1200-1400 DEG C in SiC substrate surfaces;
(2) temperature for controlling chemical vapour deposition reaction cavity is reduced to 1000 DEG C, to chemistry under atmosphere of inert gases Cvd chamber body is heated to 1600 DEG C from 1000 DEG C, makes silicon carbide epitaxial layers STRUCTURE DECOMPOSITION and restructuring, in SiC bases Multi-layer graphene film is obtained on bottom;
(3) multi-layer graphene film is peeled off, four layers of multi-layer graphene film is superimposed with each other, by two the first support bars and One the second support bar is placed between the two-layer multi-layer graphene film of centre, the pressing and forming under the pressure of 1t.
Second support bar is arranged between two the first support bars, and first support bar includes two first supports Foot and the first support ring being fixed between the first support feet, the cross sectional shape of the first support ring is arc-shaped structure, first The thickness of pushing out ring is gradually reduced from both sides to centre, and the outermost thickness of the first support ring is h1, the first support ring center Thickness is h2, h1=1.5*h2;Second support bar includes two the second support feets and is fixed between the second support feet Second support ring, the cross sectional shape of the second support ring is arc-shaped structure, the thickness of the second support ring from both sides to it is middle gradually Increase, the outermost thickness of the second support ring are h3, and the thickness of the second support ring center is h4, h4=1.5*h3;Described The opening direction of one support ring is contrary with the opening direction of the second support ring.
Multiple multi-layer graphene films are laminated fixation by the present invention, it is fixed more firmly, Graphene effect propety is splendid Heat sink material, serve radiating effect well, realize quick conductive, production efficiency greatly improved, reduce cost, Have wide range of applications, can be widely used for equipment cooling.
Mouth of the present invention first support bar in opposite direction and the second support bar, the first support bar and the second support bar are with copper It is made up of material, has both increased heat dispersion, is improved toughness and intensity again, improve service life.

Claims (2)

1. a kind of high heat dispersion graphene composite material, it is characterized by, its preparation method is:
(1) SiC substrates are placed in chemical vapour deposition reaction cavity, control the absolute vacuum of chemical vapour deposition reaction cavity Degree grows the silicon carbide epitaxial layers of 4-8 microns more than 104 handkerchiefs in SiC substrate surfaces at 1200-1400 DEG C;
(2) temperature for controlling chemical vapour deposition reaction cavity is reduced to 1000 DEG C, to chemical gaseous phase under atmosphere of inert gases Deposition reaction cavity is heated to 1600 DEG C from 1000 DEG C, makes silicon carbide epitaxial layers STRUCTURE DECOMPOSITION and restructuring, in SiC substrates Obtain multi-layer graphene film;
(3) multi-layer graphene film is peeled off, is overlapped mutually using the multi-layer graphene film of at least two-layer, pressing and forming is obtained Graphene composite material.
2. a kind of high heat dispersion graphene composite material as claimed in claim 1, it is characterized by, the Graphene composite wood Be provided with two the first support bars and second support bar in material, second support bar be arranged on two the first support bars it Between, first support bar includes two the first support feets and the first support ring being fixed between the first support feet, first The cross sectional shape of pushing out ring is arc-shaped structure, and the thickness of the first support ring is gradually reduced from both sides to centre, and the first support ring is most The thickness in outside is h3, and the thickness of the first support ring center is h4, h3=1.5*h4;Second support bar includes two Two support feets and the second support ring being fixed between the second support feet, the cross sectional shape of the second support ring is arc-shaped structure, The thickness of the second support ring gradually increases from both sides to centre, and the outermost thickness of the second support ring is h5, in the second support ring Thickness at the heart is h6, h6=1.5*h5;The opening direction of first support ring is contrary with the opening direction of the second support ring.
CN201611235908.6A 2016-12-28 2016-12-28 Graphene composite material high in heat dissipation property Pending CN106584968A (en)

Priority Applications (1)

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Application Number Priority Date Filing Date Title
CN201611235908.6A CN106584968A (en) 2016-12-28 2016-12-28 Graphene composite material high in heat dissipation property

Publications (1)

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CN106584968A true CN106584968A (en) 2017-04-26

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Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1454277A (en) * 2000-03-30 2003-11-05 梅森奈特公司 Composite building components, and method of making same
CN1516645A (en) * 2001-06-15 2004-07-28 ����-���ء���˹��ɭ Laminates of films and methods and apparatus for their manufacture
CN101052483A (en) * 2004-08-31 2007-10-10 奥里加米工业股份有限公司 Bend line with bend controlling grooves and method
CN105441902A (en) * 2014-08-12 2016-03-30 中国科学院苏州纳米技术与纳米仿生研究所 Epitaxial silicon carbide-graphene composite film preparation method

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN1454277A (en) * 2000-03-30 2003-11-05 梅森奈特公司 Composite building components, and method of making same
CN1516645A (en) * 2001-06-15 2004-07-28 ����-���ء���˹��ɭ Laminates of films and methods and apparatus for their manufacture
CN101052483A (en) * 2004-08-31 2007-10-10 奥里加米工业股份有限公司 Bend line with bend controlling grooves and method
CN105441902A (en) * 2014-08-12 2016-03-30 中国科学院苏州纳米技术与纳米仿生研究所 Epitaxial silicon carbide-graphene composite film preparation method

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Effective date of abandoning: 20230228