JP5278737B2 - Manufacturing method of heat dissipation material - Google Patents

Abstract

<P>PROBLEM TO BE SOLVED: To provide a heat dissipating material that is excellent in electrical conductivity and heat dissipating characteristics by forming an insulating layer on a high thermal conductivity substrate. <P>SOLUTION: The heat dissipating material includes the high thermal conductivity substrate and boron nitride layer formed on a surface of at least part thereof. In the material, the boron nitride layer includes an oriented boron nitride film where a bond surface of six-membered ring between the boron and nitrogen of a boron nitride compound is in parallel with the surface of the high thermal conductivity substrate. <P>COPYRIGHT: (C)2010,JPO&amp;INPIT

Description

  The present invention relates to an insulating heat dissipation material composed of a highly heat conductive substrate and an oriented boron nitride film formed on the surface thereof, a method for producing the same, and a heat dissipation structure using the same.

  As the functions of personal computers and mobile electronic devices become higher, the amount of heat generated by a heat source such as a CPU has increased dramatically, and there is a need for higher performance heat dissipation devices. A typical heat dissipation method is a method of dissipating heat by interposing a heat dissipation sheet or an adhesive between a heat pipe made of Cu having a high heat transport capability and a heat generation source. In recent years, instead of a heavy heat pipe, a thin and lightweight heat transport sheet having an extremely high thermal conductivity in the in-plane direction such as a graphite sheet is often used. By bringing the graphite sheet into contact with the heat source, the heat of the heat source can be quickly diffused in the surface to prevent spot heat generation.

  The graphite sheet is a sheet in which graphite is laminated in a direction perpendicular to the surface (c-axis direction), and the thermal conductivity in the in-plane direction reaches about 1500 W / mK, and can be used instead of a heat pipe.

  As shown in Patent Documents 1 to 3, etc., a graphite sheet can be obtained by a method of firing an organic polymer sheet made of polyimide or the like to obtain a heat dissipation material made of a graphite structure having a very high in-plane orientation.

  The conditions for the heat treatment may be set as appropriate so that the matrix of the coating film becomes graphite. For example, it can be preferably carried out in an inert gas atmosphere in the range of 1000 ° C. to 3000 ° C. As the inert gas, for example, at least one inert gas such as argon, helium, and nitrogen can be used. The heat treatment time may be appropriately determined according to the heat treatment temperature and the like.

  In general, it is preferable to perform a heat treatment including a pre-baking step of baking in a temperature range of 1000 ° C. to 1500 ° C. and a main baking step of baking in a temperature range of 2000 ° C. to 3000 ° C.

  By performing the preliminary firing step under the above conditions, the thermal conductivity and the degree of orientation in the plane direction of the graphite structure obtained after the subsequent main firing treatment can be increased. In this baking process, in order to set it as a highly oriented graphite, it implements at the predetermined temperature chosen from the temperature range of 2000-3000 degreeC.

  However, since graphite sheet is a conductive material, if many circuit wires are exposed around the heat source, contact with the wires will cause insulation failure and lose the function as an electronic component. .

Therefore, a method has been adopted in which a resin layer is formed on the surface of the graphite sheet to ensure insulation. However, since the resin has a low thermal conductivity, there is a problem that the heat from the heat source cannot be transmitted efficiently. is there.
Japanese Patent Laid-Open No. 58-147087 Japanese Patent Laid-Open No. 60-012747 Japanese Patent Application Laid-Open No. 07-109171

  The present invention provides a heat dissipation material excellent in conductivity and heat dissipation by forming an insulating layer on the surface of a high thermal conductive substrate, and a method for manufacturing the same.

  The present invention is composed of a high thermal conductivity substrate and a boron nitride layer formed on at least one surface thereof, and the boron nitride layer has a boron-nitrogen six-membered ring bonding surface of the boron nitride compound constituting the boron nitride layer. A heat-dissipating material comprising an oriented boron nitride film that is parallel to the surface of a high thermal conductive substrate.

The heat dissipation material according to the present invention is characterized in that the high thermal conductive substrate is a conductive substrate.
The heat dissipation material according to the present invention is characterized in that the high thermal conductive substrate is a high thermal conductive substrate made of any one selected from the group consisting of Cu, Al, graphite sheet, and SiC.

  The present invention provides the heat-dissipating material comprising a first step of forming a boron nitride layer containing boron and nitrogen on at least one surface on a high thermal conductive substrate, and a second step of bringing the surface of the boron nitride layer into contact with Ga vapor. It is a manufacturing method.

  The method for manufacturing a heat dissipation material according to the present invention is characterized in that the boron nitride layer formed in the first step is amorphous.

  The method for manufacturing a heat dissipation material according to the present invention is characterized in that the temperature of the Ga vapor is 600 ° C. or higher.

  The method for manufacturing a heat dissipation material according to the present invention is characterized in that the high thermal conductive substrate is a conductive substrate.

  The method for manufacturing a heat dissipation material according to the present invention is characterized in that the high thermal conductive substrate is made of any one selected from the group consisting of Cu, Al, graphite sheet, and SiC.

  The present invention is a heat dissipation structure using the heat dissipation material, wherein the boron nitride layer is brought into contact with a heating element.

  The heat dissipating material according to the present invention is insulative and heat dissipating because a boron nitride layer having an a-axis and a b-axis oriented in the in-plane direction is formed on a substrate having high thermal conductivity. The heat dissipation material according to the present invention is promising for heat dissipation of various electronic components such as semiconductor components.

<Heat dissipation material>
The heat dissipation material according to the present invention will be described with reference to FIG. FIG. 1A is a schematic perspective cross-sectional view of a heat dissipation material in an unprocessed state, which includes a high thermal conductive substrate 3 and a boron nitride layer 2 a formed on the high thermal conductive substrate 3. FIG. 1B is a schematic perspective sectional view of a heat dissipation material according to the present invention, which includes a high thermal conductive substrate 3 and a boron nitride layer 2b formed on at least one surface thereof (in FIG. 1B, A boron nitride layer is formed on both surfaces of the high thermal conductive substrate 3), and the boron nitride layer 2b includes an oriented boron nitride film.

  2a in FIG. 1 (a) and 2b in FIG. 1 (b) both indicate a boron nitride layer, 2a is a boron nitride layer having an amorphous structure, and 2b is boron of a boron nitride compound constituting at least the boron nitride layer. And a boron nitride layer including an oriented boron nitride film in which a six-membered ring bonding surface of nitrogen is parallel to the substrate surface of the high thermal conductive substrate 3.

  The oriented boron nitride film can be obtained by treating an amorphous boron nitride layer formed on a substrate to be treated with Ga vapor.

<High thermal conductive substrate>
As the high thermal conductive substrate 3, a metal or ceramic having high thermal conductivity is preferable. For example, Cu, Al, graphite sheet, SiC and the like. In particular, since the boron nitride layer is insulative, the effect is great when the substrate is conductive. Among these, the graphite sheet is preferable because it has the highest in-plane heat transport capability.

<Boron nitride layer>
Boron nitride (hereinafter also referred to as “BN”) is known as an insulating ceramic. Among them, hexagonal BN (hereinafter also referred to as “h-BN”) has the same crystal structure as graphite. That is, it has a layered structure in which boron and nitrogen six-membered rings are regularly arranged, and each layer is bonded by van der Waals force, so that it has extremely high thermal conductivity in the in-layer direction (a-axis, b-axis direction). It has the feature of having. That is, when h-BN is laminated on the substrate surface in the c-axis direction to form an oriented boron nitride film, the heat diffusion in the layer becomes extremely fast, so that spot heat generation can be prevented.

  The orientation direction of the oriented boron nitride film is confirmed by photographing a lattice image with a transmission electron microscope. In the oriented boron nitride film of the heat dissipation material of the present invention, the c-axis of the h-BN crystal is perpendicular to the substrate surface (a-axis, b-axis) of the high thermal conductive substrate 3.

<Manufacturing method of heat dissipation material>
(Manufacturing process of heat dissipation material)
The heat dissipation material manufacturing process according to the present invention includes (1) a first process of forming a boron nitride layer containing boron and nitrogen on at least one surface of a high thermal conductive substrate, and (2) a surface of the boron nitride layer formed of Ga. It consists of the 2nd process made to contact with vapor | steam.

  In the first step, it is extremely difficult to form h-BN oriented in the a-axis and b-axis directions on the surface of the high thermal conductive substrate. When BN is coated by a vapor phase method or the like, an amorphous structure that is generally amorphous or a layer having a random crystal plane is coated. In this case, since the heat from the heating element cannot be quickly diffused in the boron nitride layer, a so-called spot heat generation state occurs in which the heat is trapped.

  On the other hand, when h-BN is laminated on the substrate surface in the c-axis direction, the heat diffusion in the layer becomes extremely fast, so that spot heat generation can be prevented.

  The inventors have intensively studied a method of forming h-BN in the a-axis and b-axis directions and forming it on the substrate surface. As a result, an amorphous boron nitride layer is formed in advance and then reacted with Ga vapor. The inventors have found that the boron nitride layer having an amorphous structure is converted into an orientation structure similar to that of graphite.

The temperature of Ga vapor for converting the amorphous boron nitride layer into the oriented boron nitride film is preferably 600 ° C. to 800 ° C. Furthermore, by applying plasma and turning Ga vapor into plasma, the boron nitride layer having an amorphous structure can be converted into an oriented boron nitride film even when the temperature of the high thermal conductive substrate 3 is about 400 ° C. The degree of vacuum when the oriented boron nitride film is treated with Ga vapor is about 10 ⁻⁴ Pa.

(Oriented boron nitride film production equipment)
The oriented boron nitride film can be produced by, for example, an oriented boron nitride film production apparatus shown in FIG.

  In the oriented boron nitride film production apparatus used in the present invention, an alumina container 4 filled with liquid Ga9 is disposed inside a quartz reaction tube 6. The substrate to be processed in which the amorphous boron nitride layer 2 a is formed on the high thermal conductive substrate 3 is disposed in the vicinity of the alumina container 4. A reaction tube heater 7 is installed outside the quartz reaction tube 6 so that the temperature inside the quartz reaction tube 6 can be adjusted.

  The high thermal conductive substrate 3 is preferably a metal or ceramic having high thermal conductivity. For example, Cu, Al, graphite sheet, SiC and the like.

  As the method for forming the amorphous boron nitride layer 2a, any conventionally known method can be used. For example, there are vapor deposition, sputtering, and CVD. The thickness of the amorphous boron nitride layer 2a is preferably set to match the thickness of the target oriented boron nitride film.

(Oriented boron nitride film manufacturing method)
A method of manufacturing an oriented boron nitride film using the oriented boron nitride film manufacturing apparatus shown in FIG. 2 will be described.

First, the substrate to be processed is fixed horizontally in the quartz reaction tube 6 and evacuated by a turbo pump to evacuate the background to 10 ⁻⁴ Pa or less. The reason why the vacuum is maintained is to activate the generation of Ga vapor 5 from the liquid Ga9. However, this synthesis method is merely an example, and it can be said that it is not particularly necessary to keep the inside of the furnace in a vacuum when Ga vapor is separately introduced.

  Next, by heating with the reaction tube heater 7, the liquid Ga9 inside the quartz reaction tube 6 is vaporized, the temperature of the Ga vapor 5 is raised to 600 ° C. or more, and is brought into contact with the surface of the amorphous boron nitride layer 2a.

The heat treatment is performed for 10 minutes to 1 hour, and then gradually cooled to room temperature.
By the heat treatment in the Ga vapor 5, an oriented boron nitride film is formed on the surface of the amorphous boron nitride layer 2a.

  In particular, when a large area coating is performed, a source gas containing Ga vapor, boron, and nitrogen can be mixed and supplied to form a relatively thick oriented boron nitride film on the substrate.

<Heat dissipation structure>
As shown in FIG. 1B, the heat dissipation structure according to the present invention is a heat dissipation structure using the heat dissipation material, characterized in that a boron nitride layer 2b having an oriented boron nitride film is brought into contact with the heating element 1. To do.

<High thermal conductive substrate>
In Examples 1 to 5 and Comparative Examples 1 to 3, high heat conductive substrates having the materials and thicknesses shown in Table 1 are used. The thermal conductivity of each high thermal conductive substrate was measured using a periodic heating method. The thermal conductivity of the graphite sheet is a value in the sheet in-plane direction.

<Formation of oriented boron nitride film>
In Examples 1 to 5, an oriented boron nitride film was formed using the oriented boron nitride film production apparatus shown in FIG.

  A quartz tube having a length of 1 m and a diameter of 25 mm is prepared and used as a quartz reaction tube 6. In this quartz reaction tube 6, an alumina container 4 having a diameter of about 1 cm filled with liquid Ga 9 is placed, and a substrate to be processed coated with an amorphous structure boron nitride layer 2 a is placed on a high heat conductive substrate 3. The film was formed by laser ablation, and the thickness of the coating is shown in Table 1.

First, the substrate to be processed is fixed horizontally in the quartz reaction tube 6 and evacuated by a turbo pump to evacuate the background to 10 ⁻⁴ Pa or less.

  The temperature of the Ga vapor 5 is raised to the treatment temperature shown in Table 1 by the reaction tube heater 7, the treatment is performed for 45 hours, and the mixture is gradually cooled to room temperature again.

  When observed with an electron microscope, an oriented boron nitride film was formed on the surface of the boron nitride layer having an amorphous structure by the heat treatment in Ga vapor. The surface of the obtained sample substrate was not particularly uneven in color and rough, and was in a very smooth mirror state.

In Comparative Example 1, no treatment with Ga vapor was performed.
In Comparative Examples 2 and 3, a substrate to be processed having an amorphous carbon layer formed on a high thermal conductive substrate 3 was treated with Ga vapor using the same apparatus as the oriented boron nitride film generating apparatus. The heat treatment with Ga vapor was carried out at the treatment temperature shown in Table 1 for 1 hour.

  When observed with an electron microscope, a graphite film was formed on the surface of the amorphous carbon layer by the heat treatment in the Ga vapor. The surface of the obtained sample substrate was not particularly uneven in color and rough, and was in a very smooth mirror state.

<Insulation measurement>
The insulation and conductivity were judged from the sheet resistance value of the obtained sample substrate.

<Measurement of thermal resistance>
The thermal resistance was measured using the apparatus shown in FIG.

First, the sample substrate 15 is sandwiched between Cu holders and pressed with a pressure of 3 kg / cm ² . The upper Cu holder 10a is a Cu cylindrical shape having a length of 20 mm (L3) and 3 mmφ (L2), and is embedded in a 10 mm □ (L1) square pillar 11 made of Teflon (registered trademark).

  The upper Cu holder 10a is heated with a ceramic heater. The upper Cu holder 10a has five thermocouple holes 13 which are measured by measuring the temperature of the central portion and extrapolating the temperature of the upper surface of the sample substrate 15 from the temperature gradient.

  On the other hand, the lower surface of the sample substrate 15 is in contact with the upper surface of the lower Cu holder 10b. A thermocouple is attached to the bottom surface of the sample substrate at the center T1 (FIG. 4) of the sample and a position T2 (FIG. 4) of 6.3 mm diagonally from T1 to directly measure the temperature of the bottom surface of the sample substrate. To do.

Thus, the heat of the heater is transmitted only to the vicinity of the center of the upper surface of the sample substrate.
The test condition is a calorific value of 12 W for a measurement time of 10 minutes.

The thermal resistance is calculated by the following formula (see FIG. 4).
Measurement of thermal resistance (K / W) = (sample top surface temperature T0−sample bottom surface temperature T1) / applied power Note that the temperature difference between T1 and T2 is used as an index of heat radiation in the in-plane direction of the sample substrate back surface. (ΔT = T1-T2) was calculated.

  The results are shown in Table 1.

<Evaluation results>
Since the sample substrates of Examples 1 to 5 in which the boron nitride layer having an amorphous structure is brought into contact with Ga vapor have a small ΔT, the heat dissipation in the in-plane direction on the back surface of the sample is excellent.

  The sample sample substrate of Comparative Example 1 with the boron nitride layer having an amorphous structure is insulative, but has a large ΔT, so it is inferior in heat dissipation in the in-plane direction on the back surface of the sample.

  The samples of Comparative Examples 2 and 3 in which the amorphous carbon layer is brought into contact with Ga vapor are conductive.

  The thermal resistance of the sample substrate treated with Ga vapor was not significantly different between the amorphous boron nitride layers of Examples 1 to 5 and the amorphous carbon layers of Comparative Examples 2 to 3.

As described above, the heat dissipating material according to the present invention had insulating properties and low thermal resistance.
It should be understood that the embodiments and examples disclosed herein are illustrative and non-restrictive in every respect. The scope of the present invention is defined by the terms of the claims, rather than the description above, and is intended to include any modifications within the scope and meaning equivalent to the terms of the claims.

(A) is a to-be-processed substrate for obtaining the thermal radiation material which concerns on this invention, (b) is typical perspective sectional drawing explaining the thermal radiation structure which concerns on this invention. It is typical sectional drawing which shows the oriented boron nitride film manufacturing apparatus used in order to manufacture the thermal radiation material which concerns on this invention. It is typical sectional drawing of the thermal resistance measuring apparatus used in the Example. It is a typical sectional view (a) of the upper Cu holder and sample substrate of the thermal resistance measuring device used in the example, and a plan view of the lower surface of the sample substrate.

Explanation of symbols

  DESCRIPTION OF SYMBOLS 1 Heat generating body, 2a, 2b Boron nitride film, 3 High heat conductive substrate, 4 Alumina container, 5 Ga vapor, 6 Quartz reaction tube, 7 Reaction tube heater, 8 Vacuum exhaust system, 9 Liquid Ga, 10a Upper Cu holder, 10b Lower Cu holder, 11 Teflon (registered trademark) prism, 12 ceramic heater, 13 thermocouple hole, 14 load, 15 sample substrate, 16 thermocouple, 17 heat insulating material.

Claims (4)

A method of manufacturing a heat dissipation material,
Forming a boron nitride layer containing boron and nitrogen on at least one surface of the high thermal conductive substrate;
Ri Do from the second step of contacting the surface of the boron nitride layer to Ga vapor,
The boron nitride layer formed in the first step is amorphous;
The heat dissipation material is composed of the high thermal conductivity substrate and the boron nitride layer formed on at least one surface thereof, and the boron nitride layer is a six-membered ring bond of boron and nitrogen of the boron nitride compound constituting the boron nitride layer. A method for manufacturing a heat dissipation material, comprising an oriented boron nitride film whose surface is parallel to the surface of the high thermal conductivity substrate . The method for producing a heat dissipation material according to claim 1 , wherein the temperature of the Ga vapor is 600 ° C or higher. The method for manufacturing a heat dissipation material according to claim 1 or 2 , wherein the high thermal conductive substrate is a conductive substrate. Method for producing a heat radiation material according to any one of claims 1 to 3, wherein the high thermal conductivity substrate is Cu, Al, graphite sheet, characterized in that it consists of any one selected from the group consisting of SiC .

Images