CN106575613B - 用于化学机械抛光的多层抛光垫 - Google Patents

用于化学机械抛光的多层抛光垫 Download PDF

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Publication number
CN106575613B
CN106575613B CN201580023882.6A CN201580023882A CN106575613B CN 106575613 B CN106575613 B CN 106575613B CN 201580023882 A CN201580023882 A CN 201580023882A CN 106575613 B CN106575613 B CN 106575613B
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CN
China
Prior art keywords
layer
polishing pad
polishing
top layer
layers
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Application number
CN201580023882.6A
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English (en)
Chinese (zh)
Other versions
CN106575613A (zh
Inventor
B.姆尔齐格洛德
J.奈尔
G.布莱克
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
CMC Materials LLC
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Cabot Microelectronics Corp
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Publication date
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Publication of CN106575613A publication Critical patent/CN106575613A/zh
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/04—Lapping machines or devices; Accessories designed for working plane surfaces
    • B24B37/042—Lapping machines or devices; Accessories designed for working plane surfaces operating processes therefor
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/22—Lapping pads for working plane surfaces characterised by a multi-layered structure
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B37/00—Lapping machines or devices; Accessories
    • B24B37/11—Lapping tools
    • B24B37/20—Lapping pads for working plane surfaces
    • B24B37/24—Lapping pads for working plane surfaces characterised by the composition or properties of the pad materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D11/00—Constructional features of flexible abrasive materials; Special features in the manufacture of such materials
    • B24D11/001—Manufacture of flexible abrasive materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24D—TOOLS FOR GRINDING, BUFFING OR SHARPENING
    • B24D18/00—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for
    • B24D18/0045—Manufacture of grinding tools or other grinding devices, e.g. wheels, not otherwise provided for by stacking sheets of abrasive material
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/32115—Planarisation
    • H01L21/3212—Planarisation by chemical mechanical polishing [CMP]

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Manufacturing & Machinery (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
CN201580023882.6A 2014-05-07 2015-04-30 用于化学机械抛光的多层抛光垫 Active CN106575613B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
US201461989669P 2014-05-07 2014-05-07
US61/989,669 2014-05-07
US201462022770P 2014-07-10 2014-07-10
US62/022,770 2014-07-10
PCT/US2015/028503 WO2015171419A1 (en) 2014-05-07 2015-04-30 Multi-layer polishing pad for cmp

Publications (2)

Publication Number Publication Date
CN106575613A CN106575613A (zh) 2017-04-19
CN106575613B true CN106575613B (zh) 2019-12-17

Family

ID=54368476

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580023882.6A Active CN106575613B (zh) 2014-05-07 2015-04-30 用于化学机械抛光的多层抛光垫

Country Status (7)

Country Link
US (1) US9818618B2 (enExample)
EP (1) EP3140852B1 (enExample)
JP (1) JP6574244B2 (enExample)
KR (1) KR102440303B1 (enExample)
CN (1) CN106575613B (enExample)
TW (1) TWI626118B (enExample)
WO (1) WO2015171419A1 (enExample)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP3887093A4 (en) * 2018-11-27 2022-08-17 3M Innovative Properties Company Polishing pads and systems and methods of making and using the same
CN112238670B (zh) * 2020-10-16 2022-11-15 上海江丰平芯电子科技有限公司 一种研磨垫的制备方法
US12459076B2 (en) * 2020-12-22 2025-11-04 Cmc Materials Llc Chemical-mechanical polishing subpad having porogens with polymeric shells

Family Cites Families (25)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5257478A (en) 1990-03-22 1993-11-02 Rodel, Inc. Apparatus for interlayer planarization of semiconductor material
US5196353A (en) 1992-01-03 1993-03-23 Micron Technology, Inc. Method for controlling a semiconductor (CMP) process by measuring a surface temperature and developing a thermal image of the wafer
US6614529B1 (en) 1992-12-28 2003-09-02 Applied Materials, Inc. In-situ real-time monitoring technique and apparatus for endpoint detection of thin films during chemical/mechanical polishing planarization
US5658183A (en) 1993-08-25 1997-08-19 Micron Technology, Inc. System for real-time control of semiconductor wafer polishing including optical monitoring
US5433651A (en) 1993-12-22 1995-07-18 International Business Machines Corporation In-situ endpoint detection and process monitoring method and apparatus for chemical-mechanical polishing
JP3270282B2 (ja) 1994-02-21 2002-04-02 株式会社東芝 半導体製造装置及び半導体装置の製造方法
JP3313505B2 (ja) 1994-04-14 2002-08-12 株式会社日立製作所 研磨加工法
US5964643A (en) 1995-03-28 1999-10-12 Applied Materials, Inc. Apparatus and method for in-situ monitoring of chemical mechanical polishing operations
US5893796A (en) 1995-03-28 1999-04-13 Applied Materials, Inc. Forming a transparent window in a polishing pad for a chemical mechanical polishing apparatus
US5838447A (en) 1995-07-20 1998-11-17 Ebara Corporation Polishing apparatus including thickness or flatness detector
US5872633A (en) 1996-07-26 1999-02-16 Speedfam Corporation Methods and apparatus for detecting removal of thin film layers during planarization
JP2002303727A (ja) * 2001-04-06 2002-10-18 Nitto Denko Corp 偏光フィルムの製造方法
US20050276967A1 (en) * 2002-05-23 2005-12-15 Cabot Microelectronics Corporation Surface textured microporous polishing pads
US6884156B2 (en) * 2003-06-17 2005-04-26 Cabot Microelectronics Corporation Multi-layer polishing pad material for CMP
US20070015448A1 (en) * 2003-08-07 2007-01-18 Ppg Industries Ohio, Inc. Polishing pad having edge surface treatment
US20070087177A1 (en) * 2003-10-09 2007-04-19 Guangwei Wu Stacked pad and method of use
US20080274307A1 (en) * 2007-04-03 2008-11-06 Dow Global Technologies Inc. Hot film lamination (vacuum assisted) for carpet backing applications
US20080274674A1 (en) * 2007-05-03 2008-11-06 Cabot Microelectronics Corporation Stacked polishing pad for high temperature applications
JP5585081B2 (ja) * 2008-05-16 2014-09-10 東レ株式会社 研磨パッド
WO2010082992A2 (en) * 2009-01-16 2010-07-22 Applied Materials, Inc. Polishing pad and system with window support
JP5671554B2 (ja) * 2009-12-30 2015-02-18 スリーエム イノベイティブ プロパティズ カンパニー 有機微粒子装填研磨パッド、並びにその製造及び使用方法
US9162340B2 (en) * 2009-12-30 2015-10-20 3M Innovative Properties Company Polishing pads including phase-separated polymer blend and method of making and using the same
US9067297B2 (en) * 2011-11-29 2015-06-30 Nexplanar Corporation Polishing pad with foundation layer and polishing surface layer
JP5893413B2 (ja) * 2012-01-17 2016-03-23 東洋ゴム工業株式会社 積層研磨パッドの製造方法
US9597769B2 (en) * 2012-06-04 2017-03-21 Nexplanar Corporation Polishing pad with polishing surface layer having an aperture or opening above a transparent foundation layer

Also Published As

Publication number Publication date
US20150325451A1 (en) 2015-11-12
KR102440303B1 (ko) 2022-09-05
EP3140852B1 (en) 2021-07-28
WO2015171419A1 (en) 2015-11-12
TWI626118B (zh) 2018-06-11
KR20170015907A (ko) 2017-02-10
EP3140852A4 (en) 2018-01-10
JP2017514718A (ja) 2017-06-08
CN106575613A (zh) 2017-04-19
EP3140852A1 (en) 2017-03-15
JP6574244B2 (ja) 2019-09-11
US9818618B2 (en) 2017-11-14
TW201542317A (zh) 2015-11-16

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