CN106571404A - 太阳能电池结构与其形成方法 - Google Patents
太阳能电池结构与其形成方法 Download PDFInfo
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- 238000000034 method Methods 0.000 title claims abstract description 30
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 claims abstract description 57
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 claims abstract description 55
- 229910052751 metal Inorganic materials 0.000 claims abstract description 19
- 239000002184 metal Substances 0.000 claims abstract description 18
- 239000000758 substrate Substances 0.000 claims abstract description 14
- VXUYXOFXAQZZMF-UHFFFAOYSA-N titanium(IV) isopropoxide Chemical compound CC(C)O[Ti](OC(C)C)(OC(C)C)OC(C)C VXUYXOFXAQZZMF-UHFFFAOYSA-N 0.000 claims abstract description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 26
- 239000011787 zinc oxide Substances 0.000 claims description 19
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 11
- JAONJTDQXUSBGG-UHFFFAOYSA-N dialuminum;dizinc;oxygen(2-) Chemical compound [O-2].[O-2].[O-2].[O-2].[O-2].[Al+3].[Al+3].[Zn+2].[Zn+2] JAONJTDQXUSBGG-UHFFFAOYSA-N 0.000 claims description 8
- CDZGJSREWGPJMG-UHFFFAOYSA-N copper gallium Chemical compound [Cu].[Ga] CDZGJSREWGPJMG-UHFFFAOYSA-N 0.000 claims description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims description 5
- 229910052711 selenium Inorganic materials 0.000 claims description 5
- 239000011669 selenium Substances 0.000 claims description 5
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- 239000011651 chromium Substances 0.000 claims description 4
- 229910052802 copper Inorganic materials 0.000 claims description 4
- 239000010949 copper Substances 0.000 claims description 4
- 229910052733 gallium Inorganic materials 0.000 claims description 4
- 229910052750 molybdenum Inorganic materials 0.000 claims description 4
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims description 4
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 3
- PGTXKIZLOWULDJ-UHFFFAOYSA-N [Mg].[Zn] Chemical compound [Mg].[Zn] PGTXKIZLOWULDJ-UHFFFAOYSA-N 0.000 claims description 3
- ZQRRBZZVXPVWRB-UHFFFAOYSA-N [S].[Se] Chemical compound [S].[Se] ZQRRBZZVXPVWRB-UHFFFAOYSA-N 0.000 claims description 3
- 229910045601 alloy Inorganic materials 0.000 claims description 3
- 239000000956 alloy Substances 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 3
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 claims description 3
- GKCNVZWZCYIBPR-UHFFFAOYSA-N sulfanylideneindium Chemical compound [In]=S GKCNVZWZCYIBPR-UHFFFAOYSA-N 0.000 claims description 3
- 229910052717 sulfur Inorganic materials 0.000 claims description 3
- 239000011593 sulfur Substances 0.000 claims description 3
- 238000005987 sulfurization reaction Methods 0.000 claims description 3
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- BQCADISMDOOEFD-UHFFFAOYSA-N Silver Chemical compound [Ag] BQCADISMDOOEFD-UHFFFAOYSA-N 0.000 claims description 2
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- MCMNRKCIXSYSNV-UHFFFAOYSA-N ZrO2 Inorganic materials O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 claims description 2
- JYMITAMFTJDTAE-UHFFFAOYSA-N aluminum zinc oxygen(2-) Chemical compound [O-2].[Al+3].[Zn+2] JYMITAMFTJDTAE-UHFFFAOYSA-N 0.000 claims description 2
- BEQNOZDXPONEMR-UHFFFAOYSA-N cadmium;oxotin Chemical compound [Cd].[Sn]=O BEQNOZDXPONEMR-UHFFFAOYSA-N 0.000 claims description 2
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 239000010931 gold Substances 0.000 claims description 2
- 229910052738 indium Inorganic materials 0.000 claims description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 claims description 2
- 229910052697 platinum Inorganic materials 0.000 claims description 2
- 229910052709 silver Inorganic materials 0.000 claims description 2
- 239000004332 silver Substances 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 claims description 2
- 239000005083 Zinc sulfide Substances 0.000 claims 1
- HVMJUDPAXRRVQO-UHFFFAOYSA-N copper indium Chemical compound [Cu].[In] HVMJUDPAXRRVQO-UHFFFAOYSA-N 0.000 claims 1
- QNWMNMIVDYETIG-UHFFFAOYSA-N gallium(ii) selenide Chemical compound [Se]=[Ga] QNWMNMIVDYETIG-UHFFFAOYSA-N 0.000 claims 1
- 229910052984 zinc sulfide Inorganic materials 0.000 claims 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 claims 1
- 238000000231 atomic layer deposition Methods 0.000 abstract description 5
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- QGZKDVFQNNGYKY-UHFFFAOYSA-N Ammonia Chemical compound N QGZKDVFQNNGYKY-UHFFFAOYSA-N 0.000 description 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 2
- BUGBHKTXTAQXES-UHFFFAOYSA-N Selenium Chemical compound [Se] BUGBHKTXTAQXES-UHFFFAOYSA-N 0.000 description 2
- NINIDFKCEFEMDL-UHFFFAOYSA-N Sulfur Chemical compound [S] NINIDFKCEFEMDL-UHFFFAOYSA-N 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 2
- 239000007864 aqueous solution Substances 0.000 description 2
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- 238000010586 diagram Methods 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 229910052736 halogen Inorganic materials 0.000 description 2
- 150000002367 halogens Chemical class 0.000 description 2
- 238000010849 ion bombardment Methods 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 238000002360 preparation method Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000011265 semifinished product Substances 0.000 description 2
- 239000010935 stainless steel Substances 0.000 description 2
- 229910001220 stainless steel Inorganic materials 0.000 description 2
- 239000010409 thin film Substances 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052719 titanium Inorganic materials 0.000 description 2
- YLZOPXRUQYQQID-UHFFFAOYSA-N 3-(2,4,6,7-tetrahydrotriazolo[4,5-c]pyridin-5-yl)-1-[4-[2-[[3-(trifluoromethoxy)phenyl]methylamino]pyrimidin-5-yl]piperazin-1-yl]propan-1-one Chemical compound N1N=NC=2CN(CCC=21)CCC(=O)N1CCN(CC1)C=1C=NC(=NC=1)NCC1=CC(=CC=C1)OC(F)(F)F YLZOPXRUQYQQID-UHFFFAOYSA-N 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- 229910000831 Steel Inorganic materials 0.000 description 1
- 229910003074 TiCl4 Inorganic materials 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 229910000928 Yellow copper Inorganic materials 0.000 description 1
- 229910021529 ammonia Inorganic materials 0.000 description 1
- 230000008033 biological extinction Effects 0.000 description 1
- QCUOBSQYDGUHHT-UHFFFAOYSA-L cadmium sulfate Chemical compound [Cd+2].[O-]S([O-])(=O)=O QCUOBSQYDGUHHT-UHFFFAOYSA-L 0.000 description 1
- 229910000331 cadmium sulfate Inorganic materials 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000009792 diffusion process Methods 0.000 description 1
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- 238000005516 engineering process Methods 0.000 description 1
- 238000003912 environmental pollution Methods 0.000 description 1
- 238000005530 etching Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 239000000203 mixture Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 150000004767 nitrides Chemical class 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000035515 penetration Effects 0.000 description 1
- 239000004033 plastic Substances 0.000 description 1
- 229920003023 plastic Polymers 0.000 description 1
- 238000007747 plating Methods 0.000 description 1
- 238000000197 pyrolysis Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000005855 radiation Effects 0.000 description 1
- 230000000630 rising effect Effects 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 239000010959 steel Substances 0.000 description 1
- XJDNKRIXUMDJCW-UHFFFAOYSA-J titanium tetrachloride Chemical compound Cl[Ti](Cl)(Cl)Cl XJDNKRIXUMDJCW-UHFFFAOYSA-J 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0352—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions
- H01L31/035272—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by their shape or by the shapes, relative sizes or disposition of the semiconductor regions characterised by at least one potential jump barrier or surface barrier
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022475—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of indium tin oxide [ITO]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/02—Details
- H01L31/0224—Electrodes
- H01L31/022466—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers
- H01L31/022483—Electrodes made of transparent conductive layers, e.g. TCO, ITO layers composed of zinc oxide [ZnO]
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/18—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof
- H01L31/1828—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe
- H01L31/1832—Processes or apparatus specially adapted for the manufacture or treatment of these devices or of parts thereof the active layers comprising only AIIBVI compounds, e.g. CdS, ZnS, CdTe comprising ternary compounds, e.g. Hg Cd Te
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P70/00—Climate change mitigation technologies in the production process for final industrial or consumer products
- Y02P70/50—Manufacturing or production processes characterised by the final manufactured product
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- Condensed Matter Physics & Semiconductors (AREA)
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Photovoltaic Devices (AREA)
Abstract
本发明提供的太阳能电池结构的形成方法,包括:形成金属电极于基板上;形成吸收层于金属电极上;形成缓冲层于吸收层上;形成氧化钛层于缓冲层上,且氧化钛层的厚度大于0且小于10nm;以及形成透明导电氧化物层于氧化钛层上,其中形成氧化钛层于缓冲层上的步骤为原子层沉积,该原子层沉积的温度介于100℃至180℃之间,且原子层沉积的前驱物为四异丙氧基钛。
Description
技术领域
本发明涉及太阳能电池,更具体的涉及其结构及形成方法。
背景技术
近年来全球工业蓬勃发展,虽然利用传统的能源供给方法成本较便宜,但却潜在着辐射及环境污染等问题。因此绿色替代能源成为各研究单位的研发重点,其中以太阳能电池最受瞩目。传统太阳电池主要以硅晶为主,但近年来各种薄膜太阳能电池蓬勃发展,但若考虑无毒、高效率以及高稳定度则以铜铟硒系列太阳能电池为首选。
铜铟镓硒(CIGS)是一种黄铜矿结构的化合物,其晶体结构为正方结构,因为拥有高光学吸收系数、吸光波段范围广、化学性质稳定性高、以及直接能隙的优点,因此相当适合做为太阳能电池的材料。一般的CIGS电池于基板上依序为电极层、CIGS层、CdS层、i-ZnO层、AZO层、以及视情况形成的指状电极。CdS层上的i-ZnO层可减缓缓冲层覆盖不完全的问题,并有效抑制电池的漏电流。此外,i-ZnO层可降低溅镀AZO层时,离子轰击对CdS层的破坏。但i-ZnO层的厚度一般高达50nm至100nm,因此吸收部分入射光而降低太阳能电池的效率。另一方面,i-ZnO层阻值大而不利电流搜集。
综上所述,目前需要新的CIGS电池结构以克服现有技术i-ZnO层所导致的问题。
发明内容
本发明一实施例提供的太阳能电池结构,包括:基板;金属电极,位于基板上;吸收层,位于金属电极上;缓冲层,位于吸收层上;氧化钛层,位于缓冲层上,且氧化钛层的厚度大于0且小于10nm;以及透明导电氧化物层,位于氧化钛层上。
本发明一实施例提供的太阳能电池结构的形成方法,包括:形成金属电极于基板上;形成吸收层于金属电极上;形成缓冲层于吸收层上;形成氧化钛层于缓冲层上,且氧化钛层的厚度大于0且小于10nm;以及形成透明导电氧化物层于氧化钛层上,其中形成氧化钛层于缓冲层上的步骤为原子层沉积,该原子层沉积的温度介于100℃至180℃之间,且原子层沉积的前驱物为四异丙氧基钛。
附图说明
图1为本发明一实施例中,太阳能电池的示意图。
【附图标记说明】
10 基板
11 金属电极
13 吸收层
15 缓冲层
17 氧化钛层
19 透明导电氧化物层
21 指状电极
100 太阳能电池
具体实施方式
图1为本发明一实施例中,太阳能电池100的示意图。首先提供基板10如塑料、不绣钢、玻璃、石英或其他常见基板材质。接着形成金属电极11于基板10上,其形成方法可为溅镀、物理气相沉积或喷涂法等。在本发明一实施例中,金属电极11可为铬、钼、铜、银、金、铂、其他金属、或上述所列金属元素中两种以上的合金。接着形成吸收层13于金属电极11上。在本发明一实施例中,吸收层13可为铜铟镓硒(CIGS)、铜铟镓硒硫(CIGSS)、铜镓硒(CGS)、铜镓硒硫(CGSS)或铜铟硒(CIS)。吸收层13的形成方法可为蒸镀法、溅镀法、电镀法、或纳米粒子涂布等方法,请参考Solar Energy,77(2004)page 749-756与Thin Solid Films,480-481(2005)page 99-109。
接着形成缓冲层15于吸收层13上。在本发明一实施例中,缓冲层15可为硫化镉、硫化锌、氧化锡锌、氧化锌、氧化锌镁或硫化铟。在本发明一实施例中,缓冲层15的厚度大于0且小于或等于30nm。若太阳能电池100不具有缓冲层15(即后续形成的TiO2层17直接接触吸收层13),则需要一段时间(比如10分钟至1小时)才会达到最高效率。若缓冲层15的厚度过大,除了使穿透光量下降外,也将因串联电阻大幅提高而导致电池效率下降。上述缓冲层15的形成方法可参考Solar Energy,77(2004)page749-756,使用的化学药品为硫酸镉(或硫酸铟)、硫脲、以及氨水,操作温度约为50℃~75℃之间。
接着以原子层沉积形成该氧化钛层17于缓冲层15上,原子层沉积的温度介于100℃至180℃之间,且原子层沉积的前驱物可为四异丙氧基钛。若原子层沉积温度过高,则会损伤吸收层13。若原子层沉积温度过低,除了镀膜速度大幅下降外,也无法去除前驱物中的碳,因此使薄膜质量大幅下降。在本发明一实施例中,氧化钛层17为非晶相。值得注意的是,用于原子层沉积的前驱物不可含卤素如TiCl4、TiBr4或类似物,以避免沉积过程中产生的卤素腐蚀下方的缓冲层15(甚至是吸收层13)。在本发明一实施例中,氧化钛层17的厚度大于0且小于10nm。若氧化钛层17的厚度过厚,则会使穿透光量下降,进而降低电池效率。若氧化钛层17不存在(即后续形成的透明导电氧化物层19直接接触缓冲层15),则无法有效抑制电池的漏电流,也无法避免溅镀透明导电氧化物层19时离子轰击对缓冲层15的破坏。另一方面,氧化钛层17的厚度与吸收层13的组成相关。举例来说,若吸收层13为铜铟镓硒(CIGS),则氧化钛层17的厚度大于0且小于10nm。
接着形成透明导电氧化物层19于氧化钛层17上。在本发明一实施例中,透明导电氧化物层19可为铟锡氧化物(ITO)、铟锌氧化物(IZO)、铝锌氧化物(AZO)、镓锌氧化物(GZO)、铝镓锌氧化物(AGZO)、镉锡氧化物、氧化锌、二氧化锆、或其他透明导电材料。透明导电氧化物层19的形成方法可为溅镀法、蒸镀法、原子层沉积法、热裂解法、纳米粒子涂布法及其他相关工艺。
在本发明一实施例中,可视情况形成指状电极21于透明导电氧化物层19上。指状电极21的材质可为镍铝合金,其形成方法可为溅镀、微影、蚀刻、和/或其他合适工艺。在本发明一实施例中,当透明导电氧化物层19的表面积较小时,可省略指状电极21。
与现有技术夹设于缓冲层与透明导电氧化物层之间的i-ZnO层相较,上述氧化钛层17具有较小的电阻以及较高的入光量,可使太阳能电池具有较佳的光电转换效率。
为了让本发明的上述和其他目的、特征和优点能更明显易懂,下文特列举举多个实施例配合所附附图详细说明如下:
实施例
实施例1(氧化钛层夹设于缓冲层与透明导电氧化物层之间)
首先于不锈钢基板上通过溅镀工艺分别镀制1000nm的Cr以及Mo作为金属电极。之后以涂布方式将CuInGa纳米粒子氧化前驱物涂布于Mo膜之上,再通过还原、硒硫化工艺以制备CIGSeS吸收层(约3000nm)。接着使用5wt%KCN水溶液清洁CIGSeS吸收层以去除铜硒化合物,即形成吸收层。接着以化学浴法镀制50nm厚的CdS薄膜于吸收层上以作为缓冲层,其中化学浴法的温度控制于65℃。接着以原子层沉积法制备3nm厚的氧化钛层于缓冲层上,此工艺温度控于120℃,且前驱物为四异丙氧基钛。之后再镀制300nm的AZO层于氧化钛层上作为透明导电氧化物层,最后再于透明导电氧化物层上镀制Ni-Al指状电极,以完成太阳能电池结构。
实施例2-1及2-2
与实施例1类似,差别在于氧化钛层的厚度增加至5nm。
实施例3
与实施例1类似,差别在于氧化钛层的厚度增加至7nm。
实施例4
与实施例1类似,差别在于氧化钛层的厚度增加至9nm。
实施例5
与实施例1类似,差别在于氧化钛层的厚度增加至10nm。
实施例6
与实施例1类似,差别在于氧化钛层的厚度增加至15nm。
实施例7
与实施例1类似,差别在于氧化钛层的厚度增加至30nm。
比较例1至7(i-ZnO层夹设于缓冲层与透明导电氧化物层之间)
首先于不锈钢基板上通过溅镀工艺分别镀制1000nm的Cr以及Mo作为金属电极。之后以涂布方式将CuInGa纳米粒子氧化前驱物涂布于Mo膜之上,再通过还原、硒硫化工艺以制备CIGSeS吸收层(约3000nm)。接着使用5wt%KCN水溶液清洁CIGSeS吸收层以去除铜硒化合物,即形成吸收层。接着以化学浴法镀制50nm厚的CdS薄膜于吸收层上以作为缓冲层,其中化学浴法的温度控制于65℃。接着以溅镀工艺制备50nm厚的i-ZnO层于缓冲层上,再镀制300nm的AZO层于i-ZnO层上作为透明导电氧化物层,最后再于透明导电氧化物层上镀制Ni-Al指状电极,以完成比较例的太阳能电池结构。
上述比较例与实施例在形成i-ZnO层/氧化钛层之前属于相同结构。在实验上,可在形成缓冲层后将太阳能电池的半成品分成两组面积相同的半成品,再分别形成i-ZnO/AZO/Ni-Al指状电极(比较例1至7)与氧化钛层/AZO/Ni-Al指状电极(实施例1至7)。
如表1至8所示,可比较不同的氧化钛层厚度对电池电性的影响。随着厚度增加(5nm至30nm),太阳能电池的Voc下降(0.564V to0.541V),即过长的原子层沉积(ALD)时间造成Cd离子的过度扩散而降低电池的Voc。此外,随着氧化钛厚度增加,实施例电池的Jsc也些微下降。随着氧化钛层厚度增加,太阳能电池的F.F.明显下降,主要原因为Rsh下降以及Rs上升所致。综上所述,当氧化钛层厚度增加,太阳能电池的效率明显下降(从12.96%(5nm)降至11.36%(30nm))。当氧化钛层厚度自5nm(如实施例2-1,2-2)减少至3nm(如实施例1),实施例1的效率略低于实施例2-1及2-2的效率。
如表4所示,分别含有比较例3与实施例3中两种不同结构的太阳能电池。由电性量测结果显示,两种结构的电池开路电压(Voc)并无明显变化。若比较电池的短路电流(Jsc),则实施例的太阳能电池比比较例的太阳能电池高约0.62mA/cm2(2.0%),推知应为氧化钛薄膜具有较高光穿透度。若比较两结构的填充因子(FF)则无明显差别,即两者的串联电阻(Rs)与并联电阻(Rsh)并无明显差别。若比较两者的电池效率,由第4表可知实施例的电池效率比比较例的电池效率高约0.25%,其效率提高原因主要为短路电流提升所致。
值得注意的是,太阳能电池的效率比较最好考虑相同电池上的比较例与实施例,以避免实验误差。举例来说,表1中实施例1比比较例1增加的效率应为(12.85-12.66)/12.66=+1.5%,表2中实施例2-1比比较例2-1增加的效率应为(12.96-12.68)/12.68=+2.2%,表3中实施例2-2比比较例2-2增加的效率应为(12.62-12.26)/12.26=+2.9%,表4中实施例3比比较例3增加的效率应为(12.78-12.53)/12.53=+2.0%,表5中实施例4比比较例增加的效率应为(12.86-12.65)/12.65=+1.6%,表6中实施例5比比较例增加的效率应为(12.72-12.56)/12.56=+1.2%,表7中实施例6比比较例增加的效率应为(12.12-12.65)/12.65=-4.2%,而表8中实施例7比比较例增加的效率应为(11.36-12.51)/12.51=-9.2%。综上所述,氧化钛层的厚度小于10nm时,比氧化钛层的厚度大于或等于10nm时更能增加太阳能电池的效率(≥+1.5%)。
表1(实施例1的氧化钛厚度=3nm)
电池 | Voc(V) | JSC(mA/cm2) | FF(%) | 效率(%) | Rsh(Ω) | Rs(Ω) |
实施例1 | 0.562 | 32.33 | 70.63 | 12.85 | 5748 | 20.9 |
比较例1 | 0.564 | 31.39 | 71.42 | 12.66 | 5825 | 20.3 |
表2(实施例2的氧化钛厚度=5nm)
表3(实施例2的氧化钛厚度=5nm)
表4(实施例3的氧化钛厚度=7nm)
电池 | Voc(V) | JSC(mA/cm2) | FF(%) | 效率(%) | Rsh(Ω) | Rs(Ω) |
实施例3 | 0.564 | 31.86 | 71.13 | 12.78 | 5889 | 20.4 |
比较例3 | 0.564 | 31.24 | 71.11 | 12.53 | 5925 | 20.5 |
表5(实施例4的氧化钛厚度=9nm)
电池 | Voc(V) | JSC(mA/cm2) | FF(%) | 效率(%) | Rsh(Ω) | Rs(Ω) |
实施例4 | 0.565 | 31.89 | 71.41 | 12.86 | 6174 | 20.4 |
比较例4 | 0.565 | 31.35 | 71.42 | 12.65 | 6332 | 20.6 |
表6(实施例5的氧化钛厚度=10nm)
表7(实施例6的氧化钛厚度=15nm)
电池 | Voc(V) | JSC(mA/cm2) | FF(%) | 效率(%) | Rsh(Ω) | Rs(Ω) |
实施例6 | 0.549 | 31.54 | 70.01 | 12.12 | 4993 | 22.5 |
比较例6 | 0.564 | 31.21 | 71.86 | 12.65 | 6230 | 20.2 |
表8(实施例7的氧化钛厚度=30nm)
电池 | Voc(V) | JSC(mA/cm2) | FF(%) | 效率(%) | Rsh(Ω) | Rs(Ω) |
实施例7 | 0.541 | 31.48 | 66.70 | 11.36 | 3789 | 27.4 |
比较例7 | 0.565 | 31.15 | 71.12 | 12.51 | 5576 | 20.7 |
实施例8
实施例8与实施例4类似,差别在于减少CdS的厚度至10nm。对应实施例8的电池制备方法与实施例4类似,差别在于此实施例的电池不具有比较例的太阳能电池结构。
实施例9
实施例9与实施例4类似,差别在于减少CdS的厚度至30nm。对应实施例9的电池制备方法与实施例4类似,差别在于此实施例的电池不具有比较例的太阳能电池结构。
表9
如表9所示,厚度小于10nm的TiO2层可进一步减少CdS缓冲层的厚度(比如30nm,10nm)以改善电池效率。
虽然本发明已以多个实施例形式公开如上,然其并非用以限定本发明,任何所属技术领域技术人员,在不脱离本发明的精神和范围内,当可作些许的更动与润饰,因此本发明的保护范围应当以的权利要求书界定为准。
Claims (14)
1.一种太阳能电池结构,包括:
一基板;
一金属电极,位于该基板上;
一吸收层,位于该金属电极上;
一缓冲层,位于该吸收层上;
氧化钛层,位于该缓冲层上,且该氧化钛层的厚度大于0且小于10nm;以及
一透明导电氧化物层,位于该氧化钛层上。
2.如权利要求1所述的太阳能电池结构,其中该缓冲层的厚度大于0且小于或等于30nm。
3.如权利要求1所述的太阳能电池结构,其中该金属电极包括铬、钼、铜、银、金、铂或上述元素中两种以上形成的合金。
4.如权利要求1所述的太阳能电池结构,其中该吸收层包括铜铟镓硒、铜铟镓硒硫、铜镓硒、铜镓硒硫或铜铟硒。
5.如权利要求4所述的太阳能电池结构,其中该吸收层为铜铟镓硒。
6.如权利要求1所述的太阳能电池结构,其中该缓冲层包括硫化镉、硫化锌、氧化锡锌、氧化锌、氧化锌镁或硫化铟。
7.如权利要求1所述的太阳能电池结构,其中该透明导电氧化物层包括铟锡氧化物、铟锌氧化物、铝锌氧化物、镓锌氧化物、铝镓锌氧化物、镉锡氧化物、氧化锌或二氧化锆。
8.如权利要求1所述的太阳能电池结构,其中该氧化钛层为非晶相。
9.一种太阳能电池结构的形成方法,包括:
形成一金属电极于一基板上;
形成一吸收层于该金属电极上;
形成一缓冲层于该吸收层上;
形成氧化钛层于该缓冲层上,且该氧化钛层的厚度大于0且小于10nm;以及
形成一透明导电氧化物层于该氧化钛层上,
其中形成该氧化钛层于该缓冲层上的步骤为原子层沉积,该原子层沉积的温度介于100℃至180℃之间,且该原子层沉积的前驱物为四异丙氧基钛。
10.如权利要求9所述的太阳能电池结构的形成方法,其中该缓冲层的厚度大于0且小于或等于30nm。
11.如权利要求9所述的太阳能电池结构的形成方法,其中该吸收层包括铜铟镓硒、铜铟镓硒硫、铜镓硒、铜镓硒硫或铜铟硒。
12.如权利要求11所述的太阳能电池结构的形成方法,其中该吸收层为铜铟镓硒。
13.如权利要求9所述的太阳能电池结构的形成方法,其中该缓冲层包括硫化镉、硫化锌、氧化锡锌、氧化锌、氧化锌镁或硫化铟。
14.如权利要求9所述的太阳能电池结构的形成方法,其中该氧化钛层为非晶相。
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Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN1185662A (zh) * | 1996-10-15 | 1998-06-24 | 松下电器产业株式会社 | 太阳电池及其制造方法 |
US20100224247A1 (en) * | 2009-03-09 | 2010-09-09 | Applied Quantum Technology, Llc | Enhancement of Semiconducting Photovoltaic Absorbers by the Addition of Alkali Salts Through Solution Coating Techniques |
CN202855752U (zh) * | 2012-11-07 | 2013-04-03 | 厦门神科太阳能有限公司 | Cigs基薄膜太阳能电池 |
CN103715283A (zh) * | 2012-10-09 | 2014-04-09 | 浙江尚颉光电科技有限公司 | 一种太阳能电池及其制备方法 |
CN104022225A (zh) * | 2014-06-20 | 2014-09-03 | 苏州瑞晟纳米科技有限公司 | 一种全溶液法制备的高效低成本铜铟镓硒/钙钛矿双结太阳能光电池 |
CN104362186A (zh) * | 2014-10-21 | 2015-02-18 | 苏州瑞晟纳米科技有限公司 | 一种应用于高效薄膜光电池的双层结构窗口层 |
Family Cites Families (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI497729B (zh) * | 2009-02-05 | 2015-08-21 | Tsmc Solar Ltd | Solar cell sputtering device |
TW201119074A (en) * | 2009-11-18 | 2011-06-01 | Nexpower Technology Corp | Thin film solar cell and manufacturing method thereof |
WO2011087878A2 (en) * | 2010-01-18 | 2011-07-21 | Applied Materials, Inc. | Manufacture of thin film solar cells with high conversion efficiency |
JP2013539912A (ja) * | 2010-09-15 | 2013-10-28 | プリカーサー エナジェティクス, インコーポレイテッド | 光起電のための堆積過程およびデバイス |
-
2016
- 2016-09-30 TW TW105131556A patent/TWI596785B/zh active
- 2016-09-30 CN CN201610865524.6A patent/CN106571404A/zh active Pending
Patent Citations (6)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
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