CN106571400A - Friction electronics phototransistor and composite energy collector applying friction electronics phototransistor - Google Patents
Friction electronics phototransistor and composite energy collector applying friction electronics phototransistor Download PDFInfo
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- 239000002131 composite material Substances 0.000 title abstract 5
- 239000010409 thin film Substances 0.000 claims description 49
- 239000000463 material Substances 0.000 claims description 46
- 239000004020 conductor Substances 0.000 claims description 43
- 150000001875 compounds Chemical class 0.000 claims description 40
- 229910052710 silicon Inorganic materials 0.000 claims description 37
- 239000010703 silicon Substances 0.000 claims description 37
- 230000003068 static effect Effects 0.000 claims description 33
- 229910052802 copper Inorganic materials 0.000 claims description 31
- 239000004065 semiconductor Substances 0.000 claims description 21
- 239000000758 substrate Substances 0.000 claims description 20
- -1 polydimethylsiloxane Polymers 0.000 claims description 18
- 230000000694 effects Effects 0.000 claims description 13
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 12
- 230000004888 barrier function Effects 0.000 claims description 12
- 238000005286 illumination Methods 0.000 claims description 8
- 239000008186 active pharmaceutical agent Substances 0.000 claims description 7
- 238000000151 deposition Methods 0.000 claims description 7
- 239000002861 polymer material Substances 0.000 claims description 7
- 229920001577 copolymer Polymers 0.000 claims description 6
- 229920002521 macromolecule Polymers 0.000 claims description 6
- 239000000377 silicon dioxide Substances 0.000 claims description 6
- 235000012239 silicon dioxide Nutrition 0.000 claims description 6
- 230000005622 photoelectricity Effects 0.000 claims description 5
- 239000004698 Polyethylene Substances 0.000 claims description 4
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 4
- 239000001913 cellulose Substances 0.000 claims description 4
- 229920002678 cellulose Polymers 0.000 claims description 4
- 230000005611 electricity Effects 0.000 claims description 4
- 239000000835 fiber Substances 0.000 claims description 4
- 239000007769 metal material Substances 0.000 claims description 4
- 229920000573 polyethylene Polymers 0.000 claims description 4
- 229920005989 resin Polymers 0.000 claims description 4
- 239000011347 resin Substances 0.000 claims description 4
- 239000004952 Polyamide Substances 0.000 claims description 3
- 229910052782 aluminium Inorganic materials 0.000 claims description 3
- 150000002148 esters Chemical class 0.000 claims description 3
- 229910052751 metal Inorganic materials 0.000 claims description 3
- 239000002184 metal Substances 0.000 claims description 3
- 229920002239 polyacrylonitrile Polymers 0.000 claims description 3
- BUZMJVBOGDBMGI-UHFFFAOYSA-N 1-phenylpropylbenzene Chemical compound C=1C=CC=CC=1C(CC)C1=CC=CC=C1 BUZMJVBOGDBMGI-UHFFFAOYSA-N 0.000 claims description 2
- IGODGTDUQSMDQU-UHFFFAOYSA-N 2-amino-2-cyclopropyl-2-(4-phosphonophenyl)acetic acid Chemical compound C=1C=C(P(O)(O)=O)C=CC=1C(N)(C(O)=O)C1CC1 IGODGTDUQSMDQU-UHFFFAOYSA-N 0.000 claims description 2
- KXGFMDJXCMQABM-UHFFFAOYSA-N 2-methoxy-6-methylphenol Chemical compound [CH]OC1=CC=CC([CH])=C1O KXGFMDJXCMQABM-UHFFFAOYSA-N 0.000 claims description 2
- WUPHOULIZUERAE-UHFFFAOYSA-N 3-(oxolan-2-yl)propanoic acid Chemical compound OC(=O)CCC1CCCO1 WUPHOULIZUERAE-UHFFFAOYSA-N 0.000 claims description 2
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 2
- 229930185605 Bisphenol Natural products 0.000 claims description 2
- VEXZGXHMUGYJMC-UHFFFAOYSA-M Chloride anion Chemical compound [Cl-] VEXZGXHMUGYJMC-UHFFFAOYSA-M 0.000 claims description 2
- 239000001856 Ethyl cellulose Substances 0.000 claims description 2
- ZZSNKZQZMQGXPY-UHFFFAOYSA-N Ethyl cellulose Chemical compound CCOCC1OC(OC)C(OCC)C(OCC)C1OC1C(O)C(O)C(OC)C(CO)O1 ZZSNKZQZMQGXPY-UHFFFAOYSA-N 0.000 claims description 2
- 244000043261 Hevea brasiliensis Species 0.000 claims description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims description 2
- 239000002202 Polyethylene glycol Substances 0.000 claims description 2
- 229920002367 Polyisobutene Polymers 0.000 claims description 2
- 239000004743 Polypropylene Substances 0.000 claims description 2
- 239000004793 Polystyrene Substances 0.000 claims description 2
- 239000004372 Polyvinyl alcohol Substances 0.000 claims description 2
- 230000009471 action Effects 0.000 claims description 2
- IISBACLAFKSPIT-UHFFFAOYSA-N bisphenol A Chemical compound C=1C=C(O)C=CC=1C(C)(C)C1=CC=C(O)C=C1 IISBACLAFKSPIT-UHFFFAOYSA-N 0.000 claims description 2
- 229910052980 cadmium sulfide Inorganic materials 0.000 claims description 2
- ULSJTMWWIWWXIW-UHFFFAOYSA-N carbonic acid;phenol Chemical compound OC(O)=O.OC1=CC=CC=C1.OC1=CC=CC=C1 ULSJTMWWIWWXIW-UHFFFAOYSA-N 0.000 claims description 2
- 239000004205 dimethyl polysiloxane Substances 0.000 claims description 2
- 229920001249 ethyl cellulose Polymers 0.000 claims description 2
- 235000019325 ethyl cellulose Nutrition 0.000 claims description 2
- LYCAIKOWRPUZTN-UHFFFAOYSA-N ethylene glycol Natural products OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 claims description 2
- DYDNPESBYVVLBO-UHFFFAOYSA-N formanilide Chemical compound O=CNC1=CC=CC=C1 DYDNPESBYVVLBO-UHFFFAOYSA-N 0.000 claims description 2
- WGCNASOHLSPBMP-UHFFFAOYSA-N hydroxyacetaldehyde Natural products OCC=O WGCNASOHLSPBMP-UHFFFAOYSA-N 0.000 claims description 2
- 239000004973 liquid crystal related substance Substances 0.000 claims description 2
- 229910052750 molybdenum Inorganic materials 0.000 claims description 2
- 239000011733 molybdenum Substances 0.000 claims description 2
- 229920003052 natural elastomer Polymers 0.000 claims description 2
- 229920001194 natural rubber Polymers 0.000 claims description 2
- 229920001568 phenolic resin Polymers 0.000 claims description 2
- 239000005011 phenolic resin Substances 0.000 claims description 2
- XNGIFLGASWRNHJ-UHFFFAOYSA-L phthalate(2-) Chemical compound [O-]C(=O)C1=CC=CC=C1C([O-])=O XNGIFLGASWRNHJ-UHFFFAOYSA-L 0.000 claims description 2
- 229950000845 politef Drugs 0.000 claims description 2
- 229920001084 poly(chloroprene) Polymers 0.000 claims description 2
- 229920000435 poly(dimethylsiloxane) Polymers 0.000 claims description 2
- 229920003229 poly(methyl methacrylate) Polymers 0.000 claims description 2
- 229920000052 poly(p-xylylene) Polymers 0.000 claims description 2
- 229920002285 poly(styrene-co-acrylonitrile) Polymers 0.000 claims description 2
- 229920002037 poly(vinyl butyral) polymer Polymers 0.000 claims description 2
- 229920002647 polyamide Polymers 0.000 claims description 2
- 229920000728 polyester Polymers 0.000 claims description 2
- 229920001223 polyethylene glycol Polymers 0.000 claims description 2
- 229920000139 polyethylene terephthalate Polymers 0.000 claims description 2
- 239000005020 polyethylene terephthalate Substances 0.000 claims description 2
- 229920000193 polymethacrylate Polymers 0.000 claims description 2
- 239000004926 polymethyl methacrylate Substances 0.000 claims description 2
- 229920006324 polyoxymethylene Polymers 0.000 claims description 2
- 229920001155 polypropylene Polymers 0.000 claims description 2
- 229920002223 polystyrene Polymers 0.000 claims description 2
- 229920002635 polyurethane Polymers 0.000 claims description 2
- 239000004814 polyurethane Substances 0.000 claims description 2
- 229920003225 polyurethane elastomer Polymers 0.000 claims description 2
- 229920002451 polyvinyl alcohol Polymers 0.000 claims description 2
- 229920000131 polyvinylidene Polymers 0.000 claims description 2
- 229920003048 styrene butadiene rubber Polymers 0.000 claims description 2
- KDYFGRWQOYBRFD-UHFFFAOYSA-L succinate(2-) Chemical compound [O-]C(=O)CCC([O-])=O KDYFGRWQOYBRFD-UHFFFAOYSA-L 0.000 claims description 2
- 239000011787 zinc oxide Substances 0.000 claims description 2
- WSLDOOZREJYCGB-UHFFFAOYSA-N 1,2-Dichloroethane Chemical group ClCCCl WSLDOOZREJYCGB-UHFFFAOYSA-N 0.000 claims 1
- 150000001412 amines Chemical group 0.000 claims 1
- KKEYFWRCBNTPAC-UHFFFAOYSA-N benzene-dicarboxylic acid Natural products OC(=O)C1=CC=C(C(O)=O)C=C1 KKEYFWRCBNTPAC-UHFFFAOYSA-N 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 238000000605 extraction Methods 0.000 claims 1
- 239000005357 flat glass Substances 0.000 claims 1
- 229910052737 gold Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 229920002627 poly(phosphazenes) Polymers 0.000 claims 1
- 229920000642 polymer Polymers 0.000 claims 1
- 238000002360 preparation method Methods 0.000 claims 1
- 229910052709 silver Inorganic materials 0.000 claims 1
- 230000005669 field effect Effects 0.000 abstract description 20
- 230000033228 biological regulation Effects 0.000 abstract description 9
- 238000006243 chemical reaction Methods 0.000 abstract description 6
- 238000005421 electrostatic potential Methods 0.000 abstract description 5
- 230000001105 regulatory effect Effects 0.000 abstract description 5
- 230000001276 controlling effect Effects 0.000 abstract description 4
- 239000010949 copper Substances 0.000 description 31
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 29
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 19
- 239000004812 Fluorinated ethylene propylene Substances 0.000 description 15
- 229920009441 perflouroethylene propylene Polymers 0.000 description 15
- 238000012360 testing method Methods 0.000 description 8
- 238000012546 transfer Methods 0.000 description 7
- 230000008878 coupling Effects 0.000 description 6
- 238000010168 coupling process Methods 0.000 description 6
- 238000005859 coupling reaction Methods 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 230000005693 optoelectronics Effects 0.000 description 6
- 238000005516 engineering process Methods 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000003993 interaction Effects 0.000 description 4
- 230000007246 mechanism Effects 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- UHOVQNZJYSORNB-UHFFFAOYSA-N Benzene Chemical compound C1=CC=CC=C1 UHOVQNZJYSORNB-UHFFFAOYSA-N 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 239000002253 acid Substances 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 2
- 230000008901 benefit Effects 0.000 description 2
- BDAGIHXWWSANSR-UHFFFAOYSA-N methanoic acid Natural products OC=O BDAGIHXWWSANSR-UHFFFAOYSA-N 0.000 description 2
- 241000208340 Araliaceae Species 0.000 description 1
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 description 1
- 235000005035 Panax pseudoginseng ssp. pseudoginseng Nutrition 0.000 description 1
- 235000003140 Panax quinquefolius Nutrition 0.000 description 1
- 229920001328 Polyvinylidene chloride Polymers 0.000 description 1
- 239000002174 Styrene-butadiene Substances 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- MTAZNLWOLGHBHU-UHFFFAOYSA-N butadiene-styrene rubber Chemical compound C=CC=C.C=CC1=CC=CC=C1 MTAZNLWOLGHBHU-UHFFFAOYSA-N 0.000 description 1
- 229910052799 carbon Inorganic materials 0.000 description 1
- 230000008859 change Effects 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 230000002708 enhancing effect Effects 0.000 description 1
- 235000019253 formic acid Nutrition 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 235000008434 ginseng Nutrition 0.000 description 1
- 150000003949 imides Chemical class 0.000 description 1
- 230000006872 improvement Effects 0.000 description 1
- 230000006698 induction Effects 0.000 description 1
- 150000002500 ions Chemical class 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000010355 oscillation Effects 0.000 description 1
- 239000002985 plastic film Substances 0.000 description 1
- 239000005033 polyvinylidene chloride Substances 0.000 description 1
- 230000008569 process Effects 0.000 description 1
- 230000009467 reduction Effects 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 239000011115 styrene butadiene Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/84—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by variation of applied mechanical force, e.g. of pressure
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N1/00—Electrostatic generators or motors using a solid moving electrostatic charge carrier
- H02N1/04—Friction generators
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- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Light Receiving Elements (AREA)
- Thin Film Transistor (AREA)
Abstract
The invention provides a friction electronics phototransistor and a composite energy collector applying the friction electronics phototransistor. According to the friction electronics phototransistor, a contact-separate type friction nanogenerator is coupled of a field effect phototransistor, the photoelectric conversion characteristic in the field effect phototransistor can be regulated and controlled by using the electrostatic potential generated by contact electrification, the conventional gate voltage is replaced and regulation and control of the photoelectric conversion characteristic of the device can be realized so that the friction electronics phototransistor becomes a novel friction photoelectronics device. According to the composite energy collector, the field effect phototransistor and the wind-powered friction nanogenerator are coupled, and the output voltage of the wind-powered friction nanogenerator acts as the internal gate voltage for regulating and controlling the performance of the light energy collector so that simultaneous collection of light energy and wind energy can be realized, the output performance of the composite energy collector can be enhanced and the friction electronics phototransistor and the composite energy collector have important application prospect.
Description
Technical field
The present invention relates to photoelectron technical field, more particularly to a kind of friction electronics phototransistor and answering using which
Close energy collector.
Background technology
Optoelectronics have very at aspects such as display, illumination, sensing and collection of energy as the new branch of science for developing rapidly
Wide application, but many photoelectric devices lack interaction mechanism and controllability with external environment.On the other hand, based on light
The energy acquisition technology of volt property can convert light energy into electric energy, can be with the energy acquisition technology one such as other wind energies, vibrational energy
Rise and collect compound energy, being that one slightly/nanometer electronic device or sensor network nodes are powered.At present, although various energy are received
Collection technology is very ripe, but every kind of energy acquisition device can only collect the energy of single form, relatively independent between device, lacks
Weary coupling mechanism compound energy collected with conversion.
2014, the research group that Chinese Academy of Sciences's Beijing nanometer energy is led with system research institute king middle forest academician will rub
Wipe nano generator to combine with conventional field effect transistor, develop the contact electrification field-effect transistor of external force touch-control.Should
Device can make gate material contact electrification under external force, form electrostatic potential as gate signal, realize to carrying in quasiconductor
Flow the regulation and control of sub- transport property.Contact electrification field-effect transistor as a kind of elemental device, can derive it is a series of can
The man-machine interaction device of various functions is realized, friction electronics (Tribotronics) this new research is thus proposed first
Field.Friction electronics have coupled triboelectrification effect and characteristic of semiconductor, are the whole new set of applications of friction nanometer power generator, can be with
Realize the collection to outside mechanical energy and for regulating and controlling transporting for carrier.By further coupling optoelectronics, can also spread out
Friction optoelectronics (Tribo-phototronics) frontier is born, the direct interaction of external environment condition and opto-electronic device is set up
Mechanism, realize to quasiconductor electrical-optical, the regulation and control of optical-electronic transformation process, while also for compound energy collection open one it is fine
New resolving ideas.
The content of the invention
(1) technical problem to be solved
In view of above-mentioned technical problem, the invention provides a kind of friction electron-optical transistor and the compound energy receipts using which
Storage, to realize the collection and conversion of compound energy.
(2) technical scheme
According to an aspect of the invention, there is provided a kind of friction electron-optical transistor.The friction electron-optical transistor bag
Include：Base material, gate conductor layer and mobile frictional layer.Wherein, base material includes：Substrate, its material are heavily doped P-type silicon；Insulating barrier,
It is formed at the front of substrate；And semiconductor layer, it is formed on insulating barrier, which is by the semi-conducting material system to light sensitive
Standby, the two diverse location depositing electrode on the semiconductor layer draws source electrode and the drain electrode of friction electronics phototransistor.Grid
Conductor layer, is formed at the back side of substrate, and which draws the grid of friction electron-optical transistor.Mobile friction member, which is at least towards grid
The part of pole conductor layer is prepared by the material that diverse location in friction electrode sequence is located at the material for preparing gate conductor layer, its
Can move under external force, contact or separate with gate conductor layer.
According to an aspect of the invention, there is provided a kind of compound energy using above-mentioned friction electron-optical transistor is collected
Device.The compound energy catcher includes：Light energy collection device, wind energy collecting device and rectifier bridge.Wherein：
Light energy collection device in the form of phototransistor, including：Base material and gate conductor layer.Base material includes：Substrate, its
Material is heavily doped P-type silicon；Insulating barrier, is formed at the front of the substrate；Semiconductor layer, is formed on the insulating barrier,
Its material is the semi-conducting material to light sensitive, the two diverse location depositing electrode on the semiconductor layer, draws the photoelectricity
The source electrode of transistor and drain electrode, gate conductor layer are formed at the back side of the substrate, draw the phototransistor thereon
Grid.Wherein, the source electrode of the phototransistor and the outfan drained as light energy collection device in compound energy catcher；
Wind energy collecting device, including：Upper static friction part, lower static friction part.Wherein, upper static friction part and lower static friction part are relative
And separate predeterminable range.Mobile friction member is located between the upper static friction part and lower static friction part, and at least its upper surface is with
The material on surface is different in friction electrode sequence by being located at from the material for preparing upper static friction part and lower static friction part opposing sides
Prepared by the material of position, the movement friction member vibrates under the action of the forces of the wind or swings, with the upper static friction part and under quiet rub
Wipe part and produce contact triboelectrification；
Two inputs of rectifier bridge are respectively connecting to the upper static friction part and lower static friction part, and its two outfan is used as multiple
The outfan of wind energy in energy collector is closed, also, its positive output end is connected to the source electrode of the phototransistor, its negative output
End is connected to the grid of the phototransistor.(3) beneficial effect
From above-mentioned technical proposal as can be seen that present invention friction electron-optical transistor and the compound energy catcher using which
Have the advantages that：
(1) contact-separate type friction nanometer power generator is coupled with field-effect photo electric transistor, composition friction electronics light
Electric transistor, can utilize the electrostatic potential that contact electrification is produced to regulate and control the light transfer characteristic in field-effect photo electric transistor,
Replace traditional gate voltage, realize the regulation and control to device photoelectric transfer characteristic, become a kind of new friction optoelectronics device；
(2) by coupling field-effect photo electric transistor and the friction nanometer power generator of wind drive, it is proposed that a kind of compound
Energy collector, using the output voltage of wind-force friction nanometer power generator as the inside gate voltage for regulating and controlling light energy collection device performance,
So that the short circuit current of light energy collection device, open-circuit voltage and peak power output can become big with the increase of wind speed, it is real
Show to collecting while luminous energy and wind energy, while the output performance for improving compound energy catcher, in photodetection, wind
Speed sensing, the efficient collection of self actuating system and compound energy and the aspect such as utilize with important application prospect.
Description of the drawings
Fig. 1 is the structural representation according to first embodiment of the invention friction electronics phototransistor；
Fig. 2 is the operation principle schematic diagram of friction electronics phototransistor shown in Fig. 1；
Fig. 3 is the photoelectricity test result of friction electronics phototransistor shown in Fig. 1；
Fig. 4 is the structural representation according to second embodiment of the invention compound energy catcher；
Equivalent circuit diagrams of the Fig. 5 for compound energy catcher shown in Fig. 4；
Fig. 6 is short circuit current of the light energy collection device under different wind-force and open circuit electricity in compound energy catcher shown in Fig. 4
Pressure test result；
Fig. 7 is peak power output test of the light energy collection device under different wind-force in compound energy catcher shown in Fig. 4
As a result.
【Main element】
10-SOI pieces
11- substrates；12 silicon dioxide insulating layers
13- top layer silicons
13a- heavily doped N-type silicon；The unadulterated p-type top layer silicons of 13b-；
21- Copper thin film 22-FEP thin film；
31-Al electrodes；32-Al electrodes；
41- support ends；42-FEP thin film；
43、45-Glass；44th, 46-Cu thin film；
47- commutators.
Specific embodiment
The present invention has coupled field-effect photo electric transistor and contact-separate type friction nanometer power generator, it is proposed that one kind is rubbed
Electronics phototransistor is wiped, which can utilize the electrostatic potential that contact electrification is produced to regulate and control the light in field-effect photo electric transistor
Electric conversion properties, replace traditional gate voltage.On this basis, by coupling rubbing for field-effect photo electric transistor and wind drive
Wipe nano generator, it is proposed that a kind of compound energy catcher.
To make the object, technical solutions and advantages of the present invention become more apparent, below in conjunction with specific embodiment, and reference
Accompanying drawing, the present invention is described in more detail.
In first exemplary embodiment of the present invention, there is provided a kind of friction electronics phototransistor.Refer to
Fig. 1, the friction electronics phototransistor are based on SOI pieces 10.The substrate 11 of the SOI pieces be heavily doped P-type silicon, 500 μm of thickness,
Resistivity is less than 0.01 Ω cm, top layer silicon 13 is P-type silicon, 2.5 μm of thickness, and which is between substrate 11 for one layer of 0.2 μ m-thick
Silicon dioxide insulating layer 12.
In the upper surface part subregion of top layer silicon 13, injected by phosphonium ion and rta technique, one layer of formation is heavily doped
Miscellaneous N-type silicon 13a, depth is 0.5um.The heavily doped N-type silicon 13a and the undoped p p-type top layer silicon 13b shape for not carrying out ion implanting
Into PN junction.The upper surface of p-type top layer silicon 13b and heavily doped N-type silicon 13a deposits the aluminium electrode 31 and aluminium electrode 32 of 1 μ m-thick respectively,
Ohmic contact is respectively formed, the source class and drain electrode as friction electronics phototransistor, external power supply.Wherein, drain electrode and source electrode
Between apply forward voltage so that PN junction receive reversed bias voltage.In this case, the upper surface of heavily doped N-type silicon 13a is used as receiving
Bright finish, PN junction can produce photoelectric current under light illumination.
It should be noted that the top layer silicon 13 in the present embodiment may be replaced by partly leading illumination very sensitive other
Thin film prepared by body material, such as molybdenum bisuphide, Zinc Oxide, cadmium sulfide and organic photoconductive material etc., i.e., in heavily doped p-type
Depositing insulating layer in the substrate of silicon, then prepares the thin film of these semi-conducting materials.Make on the thin film of these semi-conducting materials
Standby metal electrode can draw the source electrode of friction electronics phototransistor and drain electrode, and these materials have photoconductive effect,
Conductance changes under light illumination, so as to prepare field-effect photo electric transistor using which.
In the present embodiment, there is the Copper thin film 21 of one layer of Ohmic contact in 11 lower surface of substrate of SOI pieces, as friction electronics
Learn the grid of phototransistor.Mobile frictional layer is FEP (fluorinated ethylene propylene copolymer) thin film 22, is had necessarily with Copper thin film 21
Spacing, can move vertically under external force, contact or separate with Copper thin film 21.
Fig. 2 is the fundamental diagram of friction electronics phototransistor.As shown in (a) in Fig. 2, FEP thin film 22 is because of friction
Electrification, surface is with negative charge thereon.Due to having certain spacing d in original state and Copper thin film 21, will not be to photoelectric crystal
Pipe produces impact, and gate voltage is 0.External voltage VDSIt is constant, under illumination effect, between source-drain electrode, produce electric current IDS.As schemed
In 2 shown in (b), under the effect of external force F, FEP thin film 22 is contacted with Copper thin film 21, in the electrostatic induction of 22 negative charge of FEP thin film
Under effect, phototransistor will bear negative gate voltage, and p-type enhancement layer is formed in the bottom of undoped p p-type top layer silicon 13b,
So as to increased electric current I in top layer silicon 1DSSize, serve regulation and control device light transfer characteristic effect.When external force F is removed
Afterwards, FEP thin film 22 and Copper thin film 21 separate a certain distance again, and the gate voltage that phototransistor bears is become again as 0, top layer silicon
P-type conduction raceway groove in 1 gradually recovers, electric current IDSDiminish, return to the state as shown in Fig. 2 (a).Therefore, external force F is by changing
The distance between FEP thin film 22 and Copper thin film 21 d, can regulate and control the conducting channel in phototransistor, play grid voltage
Effect, so as to realize the regulation and control to device photoelectric transfer characteristic.
Fig. 3 is the photoelectricity test result of friction electronics phototransistor.As shown in figure 3, working as source-drain voltage VDSFor 0V, enter
It is 680nm HONGGUANG to penetrate light, and intensity of illumination is 1mW/cm2When, electric current IDSBecome larger with the reduction apart from d, test result
Meet the operation principle of friction electronics phototransistor.
It will be understood by those skilled in the art that in addition to Copper thin film, can also deposit in 11 lower surface of substrate of SOI pieces
The thin film of other metal materials or non-metallic conducting material is used as grid conducting layer, such as ito thin film, Au films, Pt films or Ag
Film etc..Equally, Al electrodes (31,32) can also be replaced with the electrode of other conductive materials.Additionally, in addition to FEP thin film,
Other materials for being located at diverse location in friction electrode sequence with the material for preparing gate conductor layer can also be adopted to make movement rub
Wipe layer, it is preferred to use macromolecule polymer material.
Macromolecule polymer material herein is the one kind in following material：It is politef, polydimethylsiloxane, poly-
Acid imide, poly- diphenyl propane carbonic ester, polyethylene terephthalate, aniline-formaldehyde resin, polyformaldehyde, ethyl cellulose
Element, polyamide, melamino-formaldehyde, Polyethylene Glycol succinate, cellulose, cellulose ethanoate, 10PE27,
Polydiallyl phthalate, regenerated fiber sponge, polyurethane elastomer, styrene-acrylonitrile copolymer copolymer, styrene butadiene
It is copolymer, staple fibre, polymethacrylates, polyvinyl alcohol, polyester, polyisobutylene, polyurethane flexible sponge, poly- to benzene two
Formic acid glycol ester, polyvinyl butyral resin, phenolic resin, neoprene, butadiene-propylene copolymer, natural rubber, poly- third
Alkene nitrile, poly- (vinylidene chloride-co- acrylonitrile), polyethylene the third diphenol carbonate, polystyrene, polymethyl methacrylate, poly- carbon
Acid esters, polymeric liquid crystal copolymer, polychlorobutadiene, polyacrylonitrile, poly bis phenol carbonate, CPPG, polytrifluorochloroethylene,
Polyvinylidene chloride, polyethylene, polypropylene, polrvinyl chloride and Parylene.
The movement frictional layer is collectively referred to as moving friction member with its bearing part.The movement friction member can also be on the whole by
FEP or other macromolecule polymer materials make, and do not repartition mobile frictional layer and bearing part, can equally realize this
It is bright.
It should be noted that with regard to the concept such as " heavy doping ", " friction electrode sequence ", generally acknowledge in semiconductor applications general is
Read, its concrete meaning no longer can be explained in detail to which herein referring to corresponding textbook.
In the present embodiment, contact-separate type friction nanometer power generator is coupled with field-effect photo electric transistor, composition friction
Electronics phototransistor, can utilize the electrostatic potential that contact electrification is produced to regulate and control the photoelectricity in field-effect photo electric transistor turn
Characteristic is changed, replaces traditional gate voltage, realized the regulation and control to device photoelectric transfer characteristic, become a kind of new friction photoelectron
Device is learned, is with a wide range of applications.
Based on above-mentioned friction electronics phototransistor, present invention also offers a kind of compound energy catcher.At this
In first bright exemplary embodiment, there is provided a kind of compound energy catcher.The compound energy catcher includes：Luminous energy is received
Storage and wind energy collecting device.Meanwhile, the light energy collection device and wind energy collecting device intercouple.
As shown in figure 4, the light energy collection device is done on the basis of first embodiment friction electronics phototransistor
Improve.It is different from the friction electron-optical transistor of embodiment one, in light energy collection device, no longer need to apply between source electrode and drain electrode
Plus forward voltage, but the two ends for directly being exported with the energy drained as light energy collection device by source electrode.In the present embodiment, to hinder
Property load R1As a example by, the energy that the light energy collection device is collected is applied to resistive load R1Two ends.The light energy collection device and enforcement
No longer repeat herein example friction electron-optical transistor identical part.
Fig. 4 is continued referring to, light energy collection device includes：The Copper thin film 44 of one predeterminable range of spaced opposite, Copper thin film 46；
FET ribbons between Copper thin film 44, Copper thin film 46；And rectifier bridge.Wherein, Copper thin film 44 and Copper thin film 46 are respectively by glass
Glass layer 43 and glassy layer 45 are supported, also, glassy layer 43 is fixed on the Copper thin film 21 at the SOI pieces back side.42 one end of FEP ribbons is solid
Support end 41 is scheduled on, the other end freely suspends, can be swung up and down under wind-force effect.Between Copper thin film 44 and Copper thin film 46
Oscillation Amplitude of the distance less than the lower FEP ribbons of wind-force effect.The FEP ribbons and the Copper thin film 44 and the Copper thin film 46 of lower end of upper end
Produce contact triboelectrification.FEP ribbons 42, Copper thin film 44 and Copper thin film 46 constitute the friction nanometer generating of a wind drive
Machine, i.e. wind energy collecting device.Meanwhile, the positive output end of rectifier bridge is connected to the source class of friction electronics phototransistor, negative output
End is connected to the grid of phototransistor.Outfan of the positive output end and negative output terminal of the rectifier bridge as wind energy collecting device.
In the present embodiment, with resistive load R2As a example by, the energy that the wind energy collecting device is collected is applied to resistive load R2Two ends.
Therefore, under wind-force effect, the electricity output of friction nanometer power generator causes phototransistor to bear minus gate voltage effect,
So as to increased electric current I in top layer silicon 13R1Size.With the enhancing of wind-force, friction nanometer power generator is exported to resistive load
R2The voltage at two ends becomes big, electric current I thereinR2It is consequently increased, the output performance of light energy collection device also strengthens therewith in addition.
Equivalent circuit diagrams of the Fig. 5 for compound energy catcher shown in Fig. 4.As shown in figure 5, compound energy catcher can be waited
Effect is to be sent out by a field-effect transistor (MOSFET), a photodiode (Photodiode) and a direct current friction nanometer
Motor (DC-TENG) is constituted.Wherein, direct current friction nanometer power generator instead of the grid power supply of field-effect transistor, can be in wind
Electric energy, output current I are provided to external circuit resistive load under power effectR2, and while provide what is born to field-effect photo electric transistor
Gate voltage, regulates and controls the trench size between source and drain.Source and drain ditch of the photoelectric current that photodiode is produced through field-effect transistor
External output current I in roadR1.Therefore, the compound energy catcher can collect solar energy and wind energy simultaneously, and be changed by wind energy
The electric energy of generation can be used for the light transfer characteristic for regulating and controlling light energy collection device simultaneously, so as to improve the output of compound energy catcher
Performance.
Fig. 6 is short circuit current of the light energy collection device under different wind-force and open circuit electricity in compound energy catcher shown in Fig. 4
Pressure test result.Fig. 7 is peak power output survey of the light energy collection device under different wind-force in compound energy catcher shown in Fig. 4
Test result.As shown in Figure 6,7, when solar irradiation is 2mW/cm2, wind speed becomes when turning to 7m/s to 11m/s, light energy collection device it is short
Road electric current, open-circuit voltage and peak power output become big with the increase of wind speed, and test result meets the compound energy and collects
The design principle of device.
Equally it will be understood by those skilled in the art that in the present embodiment, glassy layer 43 and Copper thin film 44 constitute above quiet rubbing
Wipe part.Glassy layer 45 and the lower static friction part of the composition of Copper thin film 46.Wherein, Copper thin film 44 and Copper thin film 46 are conductive material, both
Simultaneously as frictional layer and conductor layer, and the electric charge for producing that rubs can be directly inputted into rectifier bridge.Now, Copper thin film 43 and copper
Thin film 46 can also be replaced using the thin film of other conductive materials, for example：Ito thin film, Au films, Pt films or Ag films etc..And
And, Copper thin film 44 and Copper thin film 46 can be carried with the thin layer by other insulant or tablet, for example, plastic sheet, tree
Fat piece etc..
It will be appreciated by persons skilled in the art that in other embodiments of the present invention, frictional layer and conductor layer can be divided
It is not independently arranged, for example：
(1) for upper static friction part, which can include：Upper load-bearing body, is the sheet shaped piece or thin film prepared by insulant,
Form or be fixed on the lower section of gate conductor layer；Upper conductor layer, is formed on the upper load-bearing body；Upper frictional layer, is formed at institute
State in upper conductor layer.In this case, the electric charge that upper frictional layer friction is produced is input into via upper conductor layer to the one of rectifier bridge
Input；
(2) for lower frictional layer, which can include：Lower bearing part, is the sheet shaped piece prepared by insulant；Lower conductor
Layer, is formed on the lower bearing part；Lower frictional layer, is formed in the lower conductor layer.In this case, lower frictional layer rubs
Wipe the electric charge for producing to be input into via lower conductor layer to an another input of rectifier bridge.
Additionally, FEP ribbons 42 are used as the ribbon shape or piece that mobile friction member can also be other macromolecule polymer materials
Shape object, and the macromolecule polymer material differs more remote better with the friction electrode sequence of upper and lower friction layer material.
In the present embodiment, by the friction nanometer power generator for coupling field-effect photo electric transistor and wind drive, it is proposed that
A kind of compound energy catcher, using the voltage in the output of wind-force friction nanometer power generator to external circuit resistive load as regulation and control
The inside gate voltage of light energy collection device performance so that the short circuit current of light energy collection device, open-circuit voltage and peak power output are all
Can become big with the increase of wind speed, realize to collecting while luminous energy and wind energy, and establish different-energy collection skill
Coupling mechanism between art, in photodetection, wind speed sensing, the efficient collection of self actuating system and compound energy and utilizes
Aspect has important application prospect.
So far, two embodiment of the invention has been described in detail already in connection with accompanying drawing.According to above description, this area skill
Art personnel should be clearly recognized to present invention friction electronics phototransistor and having using its compound energy catcher.
It should be noted that in accompanying drawing or description text, the implementation for not illustrating or describing is affiliated technology
In field, form known to a person of ordinary skill in the art, is not described in detail.Additionally, the above-mentioned definition to each element and method is simultaneously
Various concrete structures, shape or the mode mentioned in being not limited only to embodiment, those of ordinary skill in the art can carry out letter to which
Singly change or replace, for example：
(1) demonstration of the parameter comprising particular value, but these parameters can be provided herein without the need for being definitely equal to corresponding value, and
It is can be similar to analog value in acceptable error margin or design constraint；
(2) direction term mentioned in embodiment, for example " on ", D score, "front", "rear", "left", "right" etc., be only ginseng
The direction of accompanying drawing is examined, not for limiting the scope of the invention；
(3) above-described embodiment can be based on design and the consideration of reliability, and the collocation that is mixed with each other is used or and other embodiment
Mix and match is used, i.e., the technical characteristic in different embodiments can freely form more embodiments.
In sum, the present invention proposes a kind of friction electronics phototransistor, and displaying regulates and controls device by mechanical input
The man-machine interaction device of light transfer characteristic.And a kind of compound energy catcher is proposed on this basis, can collect simultaneously
Solar energy and wind energy, and the electric energy for producing is changed by the use of wind energy as device inside gate voltage, realize exporting light energy collection device
The regulation and control of performance.The present invention extends application of the friction electronics functional device at aspects such as opto-electronic conversion, energy acquisitions, and being can
The photoelectric device of modulation and efficiently collect and potential solution route is provided using compound energy.
Particular embodiments described above, has been carried out to the purpose of the present invention, technical scheme and beneficial effect further in detail
Describe bright, the be should be understood that specific embodiment that the foregoing is only the present invention in detail, be not limited to the present invention, it is all
Within the spirit and principles in the present invention, any modification, equivalent substitution and improvements done etc., should be included in the guarantor of the present invention
Within the scope of shield.
Claims (12)
1. a kind of friction electronics phototransistor, it is characterised in that include：
Base material, including：
Substrate, its material are heavily doped P-type silicon；
Insulating barrier, is formed at the front of the substrate；And
Semiconductor layer, is formed on the insulating barrier, and which is prepared by the semi-conducting material to light sensitive, in the semiconductor layer
Upper two diverse locations depositing electrode, draws source electrode and the drain electrode of the friction electronics phototransistor；
Gate conductor layer, is formed at the back side of the substrate, the grid of its extraction friction electron-optical transistor；And
Mobile friction member, which is to be located at franklinic electricity by with the material for preparing gate conductor layer at least towards the part of gate conductor layer
In the sequence of pole prepared by the material of diverse location, and which can move under external force, contacts or separates with the gate conductor layer.
2. it is according to claim 1 friction electronics phototransistor, it is characterised in that apply between the drain and source
Forward voltage, wherein：
When mobile friction member is separated with the gate conductor layer, the voltage of the grid of the electronics phototransistor that rubs is 0, source
Electric current I is produced between pole and drain electrodeDS；
When mobile friction member contact with the gate conductor layer, the voltage of the grid of friction electronics phototransistor be it is negative,
P-type enhancement layer, the electric current I between source electrode and drain electrode are formed on the bottom of the semiconductor layerDSIncrease.
3. it is according to claim 1 friction electronics phototransistor, it is characterised in that the base material be SOI pieces；
The insulating barrier is the silicon dioxide insulating layer being formed in the substrate, and the semiconductor layer is to be formed at silicon dioxide
P-type top layer silicon on insulating barrier；
N-type heavy doping is carried out in the subregion of the p-type top layer silicon, heavily doped N-type silicon is formed；In the heavily doped N-type silicon and not
Depositing electrode is distinguished in the p-type top layer silicon being doped, drain electrode and the source electrode of the friction electronics phototransistor is drawn.
4. friction electron-optical transistor according to claim 3, it is characterised in that the heavily doped N-type silicon with do not carry out
The p-type top layer silicon of doping forms PN junction, and used as sensitive surface, the PN junction produces photoelectricity to the upper surface of heavily doped N-type silicon under light illumination
Stream.
5. friction electronics phototransistor according to claim 1, it is characterised in that the material of the semiconductor layer is
One kind in following material：Molybdenum bisuphide, Zinc Oxide, cadmium sulfide and organic photoconductive material.
6. it is according to any one of claim 1 to 5 friction electronics phototransistor, it is characterised in that：
The material of gate conductor layer is：Conductive metal material or non-metallic conducting material；
The material of the electrode of two diverse locations on the semiconductor layer deposition is：Conductive metal material or radio frequency material
Material；
It is described with material that is preparing gate conductor layer positioned at the material of diverse location in friction electrode sequence to be：High molecular polymer material
Material.
7. it is according to claim 6 friction electronics phototransistor, it is characterised in that：
The non-metallic conducting material is：ITO；And/or
The conductive metal material is：Pt, Au, Ag, Cu or Al；And/or
The macromolecule polymer material is the one kind in following material：Politef, polydimethylsiloxane, polyamides are sub-
It is amine, poly- diphenyl propane carbonic ester, polyethylene terephthalate, aniline-formaldehyde resin, polyformaldehyde, ethyl cellulose, poly-
Amide, melamino-formaldehyde, Polyethylene Glycol succinate, cellulose, cellulose ethanoate, 10PE27, poly- neighbour
Dially phthalate, regenerated fiber sponge, polyurethane elastomer, styrene-acrylonitrile copolymer copolymer, styrenebutadiene copolymer
Thing, staple fibre, polymethacrylates, polyvinyl alcohol, polyester, polyisobutylene, polyurethane flexible sponge, poly terephthalic acid
Glycol ester, polyvinyl butyral resin, phenolic resin, neoprene, butadiene-propylene copolymer, natural rubber, polyacrylonitrile,
Poly- (vinylidene chloride-co- acrylonitrile), polyethylene the third diphenol carbonate, polystyrene, polymethyl methacrylate, Merlon,
It is polymeric liquid crystal copolymer, polychlorobutadiene, polyacrylonitrile, poly bis phenol carbonate, CPPG, polytrifluorochloroethylene, poly- inclined
Dichloroethylene, polyethylene, polypropylene, polrvinyl chloride and Parylene.
8. a kind of compound energy catcher, it is characterised in that include：
Light energy collection device, its in the form of phototransistor, including：
Base material, including：
Substrate, its material are heavily doped P-type silicon；
Insulating barrier, is formed at the front of the substrate；And
Semiconductor layer, is formed on the insulating barrier, and its material is the semi-conducting material to light sensitive, in the semiconductor layer
Upper two diverse locations depositing electrode, draws source electrode and the drain electrode of the phototransistor；And
Gate conductor layer, is formed at the back side of the substrate, draws the grid of the phototransistor thereon；
Wherein, the source electrode of the phototransistor and the outfan drained as light energy collection device in compound energy catcher；
Wind energy collecting device, including：
The upper static friction part and lower static friction part of spaced opposite predeterminable range；And
Mobile friction member, between the upper static friction part and lower static friction part, at least material of its upper and lower surface
It is by the material that diverse location in friction electrode sequence is located at the material for preparing upper static friction part and lower static friction part opposing sides
Prepare, the movement friction member vibrates under the action of the forces of the wind or swings, produce with the upper static friction part and lower static friction part and connect
Tactile triboelectrification；And
Rectifier bridge, its two input are respectively connecting to the upper static friction part and lower static friction part, and its two outfan is used as compound
The outfan of wind energy in energy collector, also, its positive output end is connected to the source electrode of the phototransistor, its negative output terminal
It is connected to the grid of the phototransistor.
9. compound energy catcher according to claim 8, it is characterised in that：
The upper static friction part includes：Upper load-bearing body, is the sheet shaped piece or thin film prepared by insulant, forms or be fixed on institute
State the lower section of the gate conductor layer of phototransistor；Upper conductor layer, is formed on the upper load-bearing body；And upper frictional layer, shape
In upper conductor layer described in Cheng Yu；
The lower static friction part includes：Lower bearing part, is the sheet shaped piece prepared by insulant；Lower conductor layer, is formed at described
On lower bearing part；And lower frictional layer, it is formed in the lower conductor layer；
Wherein, two inputs of the rectifier bridge are respectively connecting to the upper conductor layer and the lower static friction of the upper static friction part
The lower conductor layer of part；The mobile friction member is located in friction electrode sequence by the material that frictional layer and lower frictional layer are gone up with preparation
It is prepared by the material of diverse location.
10. compound energy catcher according to claim 9, it is characterised in that：The upper load-bearing body and the lower carrying
Part is sheet glass or glassy layer；
In upper static friction part, the upper conductor layer and upper frictional layer are same layer, are prepared by metal or non-metallic conducting material；
In lower static friction part, the lower conductor layer and lower frictional layer are same layer, are prepared by metal or non-metallic conducting material.
11. according to claim 8 meet energy collector, it is characterised in that the mobile friction member is polyphosphazene polymer
Ribbon shape object prepared by compound material；
Wherein, one end of the ribbon shape object is fixed the position of air inlet between upper static friction part and lower static friction part, another
End freely suspends, and can swing up and down under wind-force effect, so as to produce contact with the upper static friction part and lower static friction part
Triboelectrification.
12. compound energy catchers according to claim 8, it is characterised in that the base material is SOI pieces；
The insulating barrier is the silicon dioxide insulating layer being formed in the substrate, and the semiconductor layer is to be formed at silicon dioxide
P-type top layer silicon on insulating barrier；
N-type heavy doping is carried out in the subregion of the p-type top layer silicon, heavily doped N-type silicon is formed；The heavily doped N-type silicon with not
The p-type top layer silicon being doped forms PN junction；Deposited on the heavily doped N-type silicon with the p-type top layer silicon not being doped respectively
Electrode, draws drain electrode and the source electrode of the friction electronics phototransistor；
Wherein, used as sensitive surface, the PN junction produces photoelectric current to the upper surface of the heavily doped N-type silicon under light illumination.
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107919810A (en) * | 2017-12-11 | 2018-04-17 | 首都师范大学 | A kind of aircraft electrostatic protection and Collection utilization system |
| CN109347360A (en) * | 2018-12-13 | 2019-02-15 | 电子科技大学 | A kind of contact separation formula semiconductor friction generator |
| CN112578189A (en) * | 2019-09-27 | 2021-03-30 | 中国科学院物理研究所 | Self-driven photoelectric detection system |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002055436A (en) * | 2000-07-26 | 2002-02-20 | Anam Semiconductor Inc | Method for removing foreign matter on photomask |
| CN103780128A (en) * | 2013-04-16 | 2014-05-07 | 国家纳米科学中心 | Wind power friction nanometer generator |
| CN104600114A (en) * | 2013-11-01 | 2015-05-06 | 北京纳米能源与系统研究所 | Friction electric field effect transistor |
-
2015
- 2015-12-17 CN CN201510953821.1A patent/CN106571400B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2002055436A (en) * | 2000-07-26 | 2002-02-20 | Anam Semiconductor Inc | Method for removing foreign matter on photomask |
| CN103780128A (en) * | 2013-04-16 | 2014-05-07 | 国家纳米科学中心 | Wind power friction nanometer generator |
| CN104600114A (en) * | 2013-11-01 | 2015-05-06 | 北京纳米能源与系统研究所 | Friction electric field effect transistor |
Non-Patent Citations (1)
| Title |
|---|
| CHI ZHANG ET AL: "Contact Electrification Field-Effect Transistor", 《ACS NANO》 * |
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107919810A (en) * | 2017-12-11 | 2018-04-17 | 首都师范大学 | A kind of aircraft electrostatic protection and Collection utilization system |
| CN107919810B (en) * | 2017-12-11 | 2023-12-22 | 首都师范大学 | Aircraft electrostatic protection and collection utilization system |
| CN109347360A (en) * | 2018-12-13 | 2019-02-15 | 电子科技大学 | A kind of contact separation formula semiconductor friction generator |
| CN109347360B (en) * | 2018-12-13 | 2020-12-01 | 电子科技大学 | Contact separation type semiconductor friction generator |
| CN112578189A (en) * | 2019-09-27 | 2021-03-30 | 中国科学院物理研究所 | Self-driven photoelectric detection system |
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