CN106571351A - 芯片级智能卡制造方法及智能卡 - Google Patents

芯片级智能卡制造方法及智能卡 Download PDF

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CN106571351A
CN106571351A CN201610994281.6A CN201610994281A CN106571351A CN 106571351 A CN106571351 A CN 106571351A CN 201610994281 A CN201610994281 A CN 201610994281A CN 106571351 A CN106571351 A CN 106571351A
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高洪涛
陆美华
刘玉宝
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Shanghai Inore Information Electronics Co., Ltd.
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Abstract

本发明提供一种芯片级智能卡的制造方法及智能卡,所述方法包括如下步骤:提供一具有至少一个凹槽的卡基;在每一凹槽底部放置至少一个芯片,芯片具有焊垫的表面朝上;采用第一填充物填充部分所述凹槽,形成第一填充物层,且芯片被所述第一填充物层覆盖;蚀刻第一填充物层表面,暴露出芯片的焊垫;在第一填充物层表面沉积金属,形成与芯片的焊垫电连接的金属脚;采用第二填充物填充凹槽,形成第二填充物层,金属脚被第二填充物层覆盖;蚀刻第二填充物层表面,暴露出金属脚;在第二填充物层表面沉积金属,形成外部触点,外部触点与所述金属脚电连接。本发明的优点在于,将模块制作与成卡合二为一,工序短,所用材料少,成本低,卡更薄,使用更方便。

Description

芯片级智能卡制造方法及智能卡
技术领域
本发明涉及智能卡领域,尤其涉及一种芯片级智能卡制造方法及智能卡。
背景技术
参见图1A及图1B,其中图1B是沿图1A中A-A向的剖视图。现有的智能卡包括卡基10及智能卡模块11,所述智能卡模块11嵌入所述卡基10的卡槽(附图中未标记)内。所述智能卡模块11包括芯片12及外部触点13,所述芯片12通过金属引线14与所述外部触点13电连接。现有技术中,智能卡制作通常分为两步,第一步通过打线的方式将芯片12固定并连接到外部触点13,制成智能卡模块11;第二步,将智能卡模块11嵌入卡基10,制成智能卡。现有的方法工艺具有如下缺点:过程复杂,导致良率低;所用材料昂贵,导致成本高;工序长,导致开发周期及产品周期长;智能卡有厚度极限,难以满足薄型化的要求。
发明内容
本发明的目的在于,克服现有技术的缺陷,提供一种工序短、成本低、厚度小的芯片级智能卡制造方法及智能卡。
为实现上述目的,本发明提供了一种芯片级智能卡的制造方法,包括如下步骤:提供一具有至少一个凹槽的卡基;在每一所述凹槽底部放置至少一个芯片,所述芯片具有焊垫的表面朝上;采用第一填充物填充部分所述凹槽,形成第一填充物层,且所述芯片被所述第一填充物层覆盖;蚀刻所述第一填充物层表面,暴露出所述芯片的焊垫;在第一填充物层表面沉积金属,形成与所述芯片的焊垫电连接的金属脚;采用第二填充物填充所述凹槽,形成第二填充物层,所述金属脚被所述第二填充物层覆盖;蚀刻所述第二填充物层表面,暴露出所述金属脚;在第二填充物层表面沉积金属,形成外部触点,所述外部触点与所述金属脚电连接。
进一步,采用激光蚀刻的方法蚀刻所述第一填充物层表面及第二填充物层表面。
进一步,在蚀刻所述第一填充物层表面的步骤中,除暴露出所述芯片的焊垫之外,还在所述第一填充物层表面形成一浅层图形区,在第一填充物层表面沉积金属的步骤中,在浅层图形区沉积的金属与所述金属脚连接。
进一步,在蚀刻所述第二填充物层表面的步骤中,并未暴露出金属脚,而是暴露出所述浅层图形区。
进一步,在蚀刻所述第二填充物层表面的步骤中,除暴露出所述金属脚之外,还在所述第二填充物层表面形成一浅层图形区,在第二填充物层表面沉积金属的步骤中,在浅层图形区沉积的金属形成所述外部触点,并与所述金属脚电连接。
本发明还提供一种智能卡,包括卡基,所述卡基具有至少一凹槽,至少一芯片设置在所述凹槽底部,所述芯片具有焊垫的表面朝上,在所述凹槽内填充有填充物,在所述填充物的上表面设置有外部触点,所述芯片的焊垫通过金属脚与所述外部触点电连接。
进一步,所述金属脚包括与芯片焊垫连接的第一接触部、与外部触点连接的第二接触部及连接所述第一接触部与第二接触部的延伸部,所述延伸部从芯片向凹槽壁方向延伸,以增大相邻的焊垫对应的第二接触部的间距。
进一步,所述延伸部沿水平方向延伸
进一步,所述外部触点嵌入所述填充物上表面。
进一步,所述填充物包括第一填充物层及设置在所述第一填充物层上的第二填充物层,所述第一填充物层覆盖所述芯片。
本发明的优点在于,本发明在卡基中直接制作智能卡模块,将模块制作与成卡合二为一,工序短,所用材料少,成本低,卡更薄,使用更方便。
附图说明
图1A及图1B是现有的智能卡的结构示意图;
图2是本发明芯片级智能卡的制造方法的步骤示意图;
图3A~图3H是本发明芯片级智能卡的制造方法工艺流程图;
图4是本发明智能卡的结构示意图。
具体实施方式
下面结合附图对本发明提供的芯片级智能卡制造方法及智能卡的具体实施方式做详细说明。
本发明提供一种芯片级智能卡的制造方法,参见图2,所述方法包括如下步骤:步骤S20、提供一具有至少一个凹槽的卡基;步骤S21、在每一所述凹槽底部放置至少一个芯片,所述芯片具有焊垫的表面朝上;步骤S22、采用第一填充物填充部分所述凹槽,形成第一填充物层,且所述芯片被所述第一填充物层覆盖;步骤S23、蚀刻所述第一填充物层表面,暴露出所述芯片的焊垫;步骤S24、在第一填充物层表面沉积金属,形成与所述芯片的焊垫电连接的金属脚;步骤S25、采用第二填充物填充所述凹槽,形成第二填充物层,所述金属脚被所述第二填充物层覆盖;步骤S26、蚀刻所述第二填充物层表面,暴露出所述金属脚;步骤S27、在第二填充物层表面沉积金属,形成外部触点,所述外部触点与所述金属脚电连接。
图3A~图3H是本发明芯片级智能卡的制造方法的工艺流程图。
参见步骤S20及图3A,提供一具有至少一个凹槽301的卡基300。卡基300的尺寸可以是一张智能卡的尺寸,也可以是可分割为多张智能卡的大尺寸,在工艺完成后,大尺寸的卡基切割为独立的智能卡,若卡基为大尺寸,则包括多个凹槽301,以保证每一智能卡均至少具有一凹槽301。在本具体实施方式中,仅示意性地设置一个凹槽301。
参见步骤S21及图3B,在每一所述凹槽301底部放置至少一个芯片302,根据使用需求,可在底部放置一个芯片302、两个芯片302或三个芯片302,本发明对芯片数量不进行限制,在本具体实施方式中,仅示意性地设置一个芯片302。所述芯片302具有焊垫(附图中未标示)的表面朝上,所述芯片302没有焊垫的表面可通过粘结剂等粘贴在凹槽301底部。
参见步骤S22及图3C,采用第一填充物填充部分所述凹槽301,形成第一填充物层303,且所述芯片302被所述第一填充物层303覆盖。所述第一填充物可以为树脂,可采用树脂压合的方法填充第一填充物。
参见步骤S23及图3D,蚀刻所述第一填充物层303表面,暴露出所述芯片302的焊垫。可采用激光蚀刻方法蚀刻所述第一填充物层303表面。优选地,在本具体实施方式中,除暴露出所述芯片302的焊垫之外,还在所述第一填充物层303表面形成一浅层图形区304,所述浅层图形区304与焊垫区连通。所述浅层图形区304的蚀刻深度小于焊垫区的蚀刻深度。
参见步骤S24及图3E,在第一填充物层303表面沉积金属,形成与所述芯片302的焊垫电连接的金属脚305。在本具体实施方式中,在所述浅层图形区304也被沉积金属,浅层图形区304沉积的金属与所述金属脚305连接,形成一金属垫306,扩大所述金属脚305与外界的接触面积,同时由于芯片的相邻的焊垫之间的距离很小,金属垫306可将所述金属脚305向外扩展,以便于后续与外部触点的连接。
参见步骤S25及图3F,采用第二填充物填充所述凹槽301,形成第二填充物层307,所述金属脚305被所述第二填充物层覆盖。进一步,在本具体实施方式中,所述第二填充物层307填满所述凹槽301,在其他具体实施方式中,所述第二填充物层307也可以部分填充所述凹槽301。所述第二填充物可以与所述第一填充物的材料相同,可以为树脂,也可以采用树脂压合的方法填充所述凹槽301。
参见步骤S26及图3G,蚀刻所述第二填充物层307表面,暴露出所述金属脚305。进一步,可采用激光蚀刻的方法蚀刻所述第二填充物层307的表面。优选地,在本具体实施方式中,并未暴露出金属脚305,而是暴露出所述浅层图形区304的金属垫306,金属垫306将金属脚305的位置向外扩展,以为外部触点提供充足的空间。
参见步骤S27及图3H,在第二填充物层307表面沉积金属,形成外部触点308,所述外部触点308与所述金属脚305电连接,从而形成智能卡,在本具体实施方式中,所述外部触点308通过金属垫306与金属脚305电连接。
进一步,在其他具体实施方式中,在蚀刻所述第二填充物层307表面的步骤中,除暴露出所述金属脚305或金属垫306之外,还在所述第二填充物层307表面形成一浅层图形区,在第二填充物层307表面沉积金属的步骤中,在浅层图形区沉积的金属形成所述外部触点,并与所述金属脚电连接,这样形成的智能卡结构,其外部触点是嵌入在凹槽内,并不是突出在智能卡表面。
参见图4,本发明还提供一种智能卡,其包括卡基400,所述卡基400具有至少一凹槽401。至少一芯片402设置在所述凹槽401底部,所述芯片402具有焊垫(附图中未标示)的表面朝上。在所述凹槽401内填充有填充物403,在所述填充物403的上表面设置有外部触点404,所述芯片402的焊垫通过金属脚405与所述外部触点404电连接。
进一步,所述金属脚405包括与芯片402的焊垫连接的第一接触部4051、与外部触点404连接的第二接触部4052及连接所述第一接触部4051与第二接触部4052的延伸部4053,所述延伸部4053从芯片402向凹槽壁方向延伸,以增大相邻的焊垫对应的第二接触部4052的间距。优选地,所述延伸部4052沿水平方向延伸。
在本具体实施方式中,所述外部触点404突出在填充物403表面,在本发明其他具体实施方式中,所述外部触点404嵌入所述填充物403上表面。所述填充物403包括第一填充物层4031及设置在所述第一填充物层4031上的第二填充物层4032,所述第一填充物层4031覆盖所述芯片402。
以上所述仅是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员,在不脱离本发明原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也应视为本发明的保护范围。

Claims (10)

1.一种芯片级智能卡的制造方法,其特征在于,包括如下步骤:
提供一具有至少一个凹槽的卡基;
在每一所述凹槽底部放置至少一个芯片,所述芯片具有焊垫的表面朝上;
采用第一填充物填充部分所述凹槽,形成第一填充物层,且所述芯片被所述第一填充物层覆盖;
蚀刻所述第一填充物层表面,暴露出所述芯片的焊垫;
在第一填充物层表面沉积金属,形成与所述芯片的焊垫电连接的金属脚;
采用第二填充物填充所述凹槽,形成第二填充物层,所述金属脚被所述第二填充物层覆盖;
蚀刻所述第二填充物层表面,暴露出所述金属脚;
在第二填充物层表面沉积金属,形成外部触点,所述外部触点与所述金属脚电连接。
2.根据权利要求1所述的制造方法,其特征在于,采用激光蚀刻的方法蚀刻所述第一填充物层表面及第二填充物层表面。
3.根据权利要求1所述的制造方法,其特征在于,在蚀刻所述第一填充物层表面的步骤中,除暴露出所述芯片的焊垫之外,还在所述第一填充物层表面形成一浅层图形区,在第一填充物层表面沉积金属的步骤中,在浅层图形区沉积的金属与所述金属脚连接。
4.根据权利要求3所述的制造方法,其特征在于,在蚀刻所述第二填充物层表面的步骤中,并未暴露出金属脚,而是暴露出所述浅层图形区。
5.根据权利要求1所述的制造方法,其特征在于,在蚀刻所述第二填充物层表面的步骤中,除暴露出所述金属脚之外,还在所述第二填充物层表面形成一浅层图形区,在第二填充物层表面沉积金属的步骤中,在浅层图形区沉积的金属形成所述外部触点,并与所述金属脚电连接。
6.一种智能卡,包括卡基,所述卡基具有至少一凹槽,其特征在于,至少一芯片设置在所述凹槽底部,所述芯片具有焊垫的表面朝上,在所述凹槽内填充有填充物,在所述填充物的上表面设置有外部触点,所述芯片的焊垫通过金属脚与所述外部触点电连接。
7.根据权利要求6所述的智能卡,其特征在于,所述金属脚包括与芯片焊垫连接的第一接触部、与外部触点连接的第二接触部及连接所述第一接触部与第二接触部的延伸部,所述延伸部从芯片向凹槽壁方向延伸,以增大相邻的焊垫对应的第二接触部的间距。
8.根据权利要求7所述的智能卡,其特征在于,所述延伸部沿水平方向延伸。
9.根据权利要求6所述的智能卡,其特征在于,所述外部触点嵌入所述填充物上表面。
10.根据权利要求6所述的智能卡,其特征在于,所述填充物包括第一填充物层及设置在所述第一填充物层上的第二填充物层,所述第一填充物层覆盖所述芯片。
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