CN106568805B - A kind of high integration Langmuir probe diagnostic system and method - Google Patents
A kind of high integration Langmuir probe diagnostic system and method Download PDFInfo
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- CN106568805B CN106568805B CN201610980115.0A CN201610980115A CN106568805B CN 106568805 B CN106568805 B CN 106568805B CN 201610980115 A CN201610980115 A CN 201610980115A CN 106568805 B CN106568805 B CN 106568805B
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Abstract
The invention discloses a kind of high integration Langmuir probe diagnostic system and method；Including Langmuir probe, trigger, scanning power supply, data acquisition unit and data processing unit；Trigger, to scanning power supply, is triggered it and produces the sawtooth voltage for specifying amplitude, cycle and number of repetition, be loaded onto Langmuir probe by optical fiber transmission pulse trigger signal；Voltage, current data progress quick multiple synchronous acquisition and storage of the data acquisition unit to Langmuir probe simultaneously；Data acquisition is disposably sent result to data processing unit after terminating, and is automatically processed and is analyzed by the data processor on computer, shows the VA characteristic curve and plasma parameter of collection.The automaticity and integrated level of the present invention is high, the data acquisition and mass data storage and communication of high-speed synchronous can be realized, and gathered data is automatically processed and analyzed using data processing, there is provided good human-computer interaction interface is shown and recorded to result.
Description
Technical field
The invention belongs to Plasma Diagnostics field, is examined more particularly, to a kind of high integration Langmuir probe
Disconnected system and method.
Background technology
Conventional plasma diagnostics means include emission spectrum, Langmuir probe, induced with laser, microwave interference etc..It is bright
Miao Er probes are a kind of important Plasma parameter diagnosis instruments, and relative to other method, it has, and structural principle is simple, can
The advantages that measuring a variety of plasma parameters.Its general principle is to stretch into a tiny metal probe in plasma,
Added to probe by bearing positive scanning voltage, attract ion and electronics in plasma, so as to form electric current on probe.
By measuring probe voltage and electric current, obtain the I-V curve of probe and carry out analysis meter calculation, you can obtain associated plasma ginseng
Number.
Current Langmuir probe diagnostic system there is volume it is larger, expensive the shortcomings of, some experimental study institutes
Probe system is often built using the signal generator, data collecting card, oscillograph of commercialization, and is joined using regulation manually
Number, manual measurement and analyze data cause that the automaticity of system is low, integrated level is not high, the real-time and precision of measurement compared with
Difference.
The content of the invention
The defects of for prior art, it is an object of the invention to provide a kind of high integration Langmuir probe diagnostic system
And method, it is intended to solve in the prior art the problem of integrated level is not high, the real-time and poor precision of measurement.
The invention provides a kind of high integration Langmuir probe diagnostic system, including Langmuir probe, trigger, scanning
Power supply, data acquisition unit and data processing unit；The input connection plasma generator of the Langmuir probe, it is described
The output end of Langmuir probe is connected to the first input end of the data acquisition unit, the input of the trigger connect from
Daughter generator, the input of the scanning power supply are connected to the output end of the trigger, and the first of the scanning power supply is defeated
Go out end to be connected with the second input of the data acquisition unit, the second output end and the data acquisition of the scanning power supply
The 3rd input connection of unit, the output end of the data acquisition unit connect the data processing unit.
Further, trigger by the control system remote control of plasma generator to ensure to diagnose strict obedience
The sequential of the control system；The trigger output pulse triggering signal is changed by electrical-optical-electrical, is transmitted by optical fiber to institute
Scanning power supply is stated, improves Electro Magnetic Compatibility.
Further, the scanning power supply includes：The singlechip controller being sequentially connected, D/A converter, preposition amplification
Device and power amplifier；Input of the input of the singlechip controller as the scanning power supply, the single-chip microcomputer control
Second output end of second output end of device processed as the scanning power supply, the first output end connection of the singlechip controller
The D/A converter, the first output end of the output end of the power amplifier as the scanning power supply.Singlechip controller
By D/A converter described in parallel data line traffic control, D/A transformation results export small-signal after preamplifier amplification
Sawtooth waveforms, then pass through the big signal sawtooth waveforms that the power amplifier is enlarged into up to hectovolt or so；The scanning power supply output
The parameters such as the amplitude of sawtooth voltage, cycle and number of repetition are exported to D/A by the singlechip controller programme-control and changed
The parallel digital signal regulation of device；The amplitude of the scanning voltage no more than the power amplifier output voltage range,
In order to obtain the completely I-V curve from ion saturation region to electronics saturation region, the amplitude of the scanning voltage should be greater than being equal to
Plasma potential；The cycle of the scanning voltage can not be less than the ratio of scanning voltage scope and the power amplifier slew rate
Value；In order to avoid probe overheats, the number of repetition of the scanning voltage and the product in cycle should be no more than 1 second.
Further, the data acquisition unit includes：The signal sampling circuit being sequentially connected, signal conditioning circuit,
A/D converter and FPGA controller；The first input end of the signal sampling circuit as the data acquisition unit first
Input, the second input of the second input of the signal sampling circuit as the data acquisition unit, the FPGA
Threeth input of the input of controller as the data acquisition unit, described in the output end of the FPGA controller is used as
The output end of data acquisition unit.Signal sampling circuit obtains two-way small signal, connected to probe current and voltage sampling
To the signal conditioning circuit；Input voltage is filtered and is adjusted to be adapted to the A/D converter by the signal conditioning circuit
Input range；The A/D converter is connected to the FPGA controller by parallel data line；The FPGA controller is to A/D
Conversion is controlled, and gathered data is stored, and is disposably sent transformation result to the data by Serial Port Line
Manage unit.
Further, the signal sampling circuit includes：Current sampling resistor Rs, voltage sampling resistor Rb, potentiometer
Ra, isolating difference amplifier U1 and general instrument amplifier U2；Described current sampling resistor Rs one end is as the sample of signal
The first input end of circuit, second input of the current sampling resistor Rs other ends as the signal sampling circuit；Institute
State potentiometer Ra and the voltage sampling resistor Rb is sequentially connected in series between described current sampling resistor Rs one end and ground；It is described every
Two inputs from difference amplifier U1 are connected to the both ends of the current sampling resistor Rs, the isolating difference amplification
Device U1 output end is connected to the first input end of the signal conditioning circuit；Two inputs of the general instrument amplifier U2
End is connected to the both ends of the voltage sampling resistor Rb, and the output end of the general instrument amplifier U2 is connected to the letter
Second input of number modulate circuit.
Further, during work, the trigger transmission pulse trigger signal gives the scanning power supply, triggers its generation
Specify amplitude, specify the sawtooth voltage of cycle and number of repetition, drive the Langmuir probe；The data acquisition list simultaneously
Voltage, current data progress quick multiple synchronous acquisition and storage of the member to the Langmuir probe；Data acquisition will after terminating
As a result disposably send to the data processing unit, it is carried out automatically by the computer program of the data processing unit
Processing and analysis, and the VA characteristic curve of collection and plasma parameter are included on computer interface.
Present invention also offers a kind of diagnostic method based on above-mentioned high integration Langmuir probe diagnostic system, including
Following step：
S1：Driver sweep power supply exports periodic serrations ripple scanning voltage；
S2：Synchronous acquisition probe voltage, current data simultaneously send it to data processing unit；
S3：Data processing unit obtains I-V curve after handling the data of collection；
S4：According to the I-V curve calculating plasma parameter, and display processing curve and result.
Further, step S3 is specially：
S301：The data of collection are handled, obtain probe voltage measured value and current measurement value；
S302：I-V curve is obtained according to the probe voltage measured value and current measurement value；
S303：The I-V curve is modified；
S304：Uniform cubic spline interpolation is carried out to I-V curve after amendment, and passes through Salvitzky-Golay filtering sides
Method carries out digital smoothness processing to the I-V curve after interpolation.
Further, in step S303, using formula I=Imeas-Vmeas/ (Ra+Rb) and V=Vmeas-I ×
Rres is modified to the I-V curve；Wherein, Imeas and Vmeas be amendment before I-V curve current value and magnitude of voltage, I
It is the Current Voltage value of revised I-V curve with V, Rres is the stray electrical between current sampling resistor Rs and probe end
Resistance.
By the contemplated above technical scheme of the present invention, compared with prior art, the present invention has following technological merit：
(1) present invention builds hardware circuit using small electronic chip and device, and utilizes the data processing on computer
Software collection and processing data, improve the integrated level and automaticity of system, and reduce the cost and volume of system.
(2) present invention builds data acquisition unit by core of FPGA controller, realizes the data acquisition of high-speed synchronous,
And mass data storage and communication, it ensure that the real-time of measurement.
(3) present invention in a plasma diagnostics can quickly multi collect I-V curve, and carry out average value filtering,
Improve the statistical accuracy of data.
(4) present invention considers influence of the interlock circuit parameter to I-V curve and is corrected, and improve data can
Reliability.
Brief description of the drawings
Fig. 1 is the operating diagram according to the high integration Langmuir probe diagnostic system of the embodiment of the present invention；
Fig. 2 is the flow chart according to the high integration Langmuir probe diagnostic method of the embodiment of the present invention；
Data processing unit is to adopting in a kind of high integration Langmuir probe diagnostic method according to embodiments of the present invention Fig. 3
The data prediction of collection, obtain the flow chart of I-V curve；
Fig. 4 be according to gathered in plasma diagnostics of the embodiment of the present invention probe voltage, the time domain of current data
Curve；
Fig. 5 is pair of the I-V curve before and after the amendment obtained in a plasma diagnostics according to the embodiment of the present invention
Compare schematic diagram；
Fig. 6 is to pass through in a plasma diagnostics according to the embodiment of the present invention and handle to obtain without digital smoothness
Second derivative curves contrast schematic diagram.
Embodiment
In order to make the purpose , technical scheme and advantage of the present invention be clearer, it is right below in conjunction with drawings and Examples
The present invention is further elaborated.It should be appreciated that the specific embodiments described herein are merely illustrative of the present invention, and
It is not used in the restriction present invention.
The invention provides a kind of high integration Langmuir probe diagnostic system and method, for being examined in a plasma
Quick repeatedly measurement probe VA characteristic curve (hereinafter referred to as I-V curve), and automatically analyze to obtain electron density, ion in disconnected
The associated plasma parameters such as density, plasma potential, floating potential, electron temperature and Electron energy distribution.The present invention can
To realize in a plasma discharge quick multi collect I-V curve and automatically process, analyze and obtain associated plasma
Parameter.
In embodiments of the present invention, high integration Langmuir probe diagnostic system includes：Langmuir probe, scanning power supply,
Trigger, data acquisition unit and data processing unit；During work, the trigger is given by optical fiber transmission pulse trigger signal
The scanning power supply, trigger it and produce the sawtooth voltage for specifying amplitude, cycle and number of repetition, driving is stretched into plasma
The Langmuir probe；The data acquisition unit is carried out quick to the voltage of the Langmuir probe, current data simultaneously
Multiple synchronous acquisition and storage；Data acquisition is disposably sent result to the data processing unit, by described after terminating
The computer program of data processing unit is automatically processed and analyzed to it, and (I-V is bent by the VA characteristic curve of collection
Line) and the plasma parameter that is calculated be shown on computer interface.
In embodiments of the present invention, trigger is tight to ensure to diagnose by the control system remote control of plasma generator
Lattice obey the sequential of the control system；The trigger output pulse triggering signal is changed by electrical-optical-electrical, is passed by optical fiber
The scanning power supply is transported to, prevents the interference of electromagnetic signal around the plasma generator, improves Electro Magnetic Compatibility.
In embodiments of the present invention, scanning power supply is put by singlechip controller, D/A converter, preamplifier and power
Big device composition；The singlechip controller is by D/A converter described in parallel data line traffic control, described in D/A transformation results are passed through
Small-signal sawtooth waveforms is exported after preamplifier amplification, then the big letter of up to hectovolt or so is enlarged into by the power amplifier
Number sawtooth waveforms；The amplitude of the scanning power supply output sawtooth voltage, the parameter such as cycle and number of repetition is by the single-chip microcomputer control
Device programme-control processed is exported to the parallel digital signal regulation of D/A converter；The amplitude of scanning voltage is no more than the power
The output voltage range of amplifier, in order to obtain the completely I-V curve from ion saturation region to electronics saturation region, the scanning
The amplitude of voltage should be greater than being equal to plasma potential；The cycle of the scanning voltage can not be less than scope and the institute of scanning voltage
State the ratio of power amplifier slew rate；In order to avoid probe overheats, the number of repetition of the scanning voltage and the product in cycle
It should be usually no more than 1 second.
In embodiments of the present invention, data acquisition unit is by signal sampling circuit, signal conditioning circuit, A/D converter and
FPGA controller forms；The signal sampling circuit obtains two-way small signal, is connected to probe current and voltage sampling
The signal conditioning circuit；Input voltage is filtered and is adjusted to be adapted to the defeated of the A/D converter by the signal conditioning circuit
Enter scope；The A/D converter is connected to the FPGA controller by parallel data line；The FPGA controller turns to A/D
Change and be controlled, and gathered data is stored, disposably sent transformation result to the data processing by Serial Port Line
Unit.
In embodiments of the present invention, signal sampling circuit is by current sampling resistor Rs, voltage sampling resistor Rb, potentiometer
Ra, isolating difference amplifier U1 and general instrument amplifier U2 compositions；Described current sampling resistor Rs one end connects the scanning
The output of power supply, the other end connect the Langmuir probe and one end of the potentiometer Ra；The other end of the potentiometer Ra
Connect one end of the voltage sampling resistor Rb；The other end of the voltage sampling resistor Rb connects the data acquisition unit
Ground；Two inputs of isolating difference amplifier U1 and general instrument the amplifier U2 connect the current sampling resistor respectively
Rs and voltage sampling resistor Rb both ends.
High integration Langmuir probe diagnostic method provided in an embodiment of the present invention, comprises the following steps：
S1：Driver sweep power supply exports periodic serrations ripple scanning voltage；
S2：Synchronous acquisition probe voltage, current data simultaneously send it to data processing unit；
S3：Data processing unit obtains I-V curve after handling the data of collection；
S4：According to the I-V curve calculating plasma parameter, and display processing curve and result.
In embodiments of the present invention, step S3 comprises the following steps：
S301：The data of collection are handled, obtain probe voltage measured value and current measurement value；
S302：I-V curve is obtained according to the probe voltage measured value and current measurement value；
S303：The I-V curve is modified；
S304：Uniform cubic spline interpolation is carried out to I-V curve after amendment, and passes through Salvitzky-Golay filtering sides
Method carries out digital smoothness processing to the I-V curve after interpolation.
In embodiments of the present invention, step S303 is modified using following equation to I-V curve.I=Imeas-
Vmeas/ (Ra+Rb), V=Vmeas-I × Rres, in formula, Imeas and Vmeas are the electric current and voltage of I-V curve before amendment
Value, I and V are the Current Voltage values of revised I-V curve, and Rres is spuious between current sampling resistor Rs and probe end
Resistance.
In order to make the purpose , technical scheme and advantage of the present invention be clearer, root is described in detail below in conjunction with accompanying drawing
According to the example embodiment of the present invention, the present invention is described in further details.It should be appreciated that specific embodiment described herein
Only part of the embodiment of the invention, the present invention are not limited by example embodiment as described herein.Based on the present invention
Described in embodiment, all other implementation that those skilled in the art are obtained in the case where not paying creative work
Example all should be fallen within the scope of protection of the present invention.
Fig. 1 shows the structural representation of the high integration Langmuir probe diagnostic system of one embodiment of the present of invention,
Including：Langmuir probe 1, trigger 2, scanning power supply 3, data acquisition unit 4 and data processing unit 5；Langmuir probe 1
Input connects plasma generator, and the output end of Langmuir probe 1 is connected to the first input end of data acquisition unit 4, touches
The input connection plasma generator of device 2 is sent out, the input of scanning power supply 3 is connected to the output end of trigger 2, scanning power supply
3 the first output end is connected with the second input of data acquisition unit 4, the second output end of scanning power supply 3 and data acquisition
The 3rd input connection of unit 4, the output end connection data processing unit 5 of data acquisition unit 4.
Wherein, the input of trigger 2 is connected to the control system of plasma generator, and output end is connected to scanning electricity
Source 3；When the control system of plasma generator goes to the instruction of probe diagnostics, trigger 2 receives control system output
Pulse signal, by its internal electrical-optical-electrical change-over circuit, trigger signal is transmitted to scanning power supply 3 by optical fiber, and then
Trigger it and export scanning voltage.
Wherein, scanning power supply 3 includes：The singlechip controller being sequentially connected, D/A converter, preamplifier and power
Amplifier；Its input is also the input of singlechip controller, and it is connected to the output end of trigger 2；Its one is defeated
Go out the output end of end and power amplifier, it is connected to the current sampling resistor Rs in data acquisition unit 4；It another
Output end is an I/O port of singlechip controller, and it is connected to the FPGA controller in data acquisition unit 4.During work,
Singlechip controller enters interrupt handling routine after the trigger signal of the transmission of trigger 2 is received, and on the one hand exports pulse letter
Number FPGA controller given in data acquisition unit 4 is so as to trigger data acquisition, the scanning voltage that on the other hand will be pre-set
The parameters such as amplitude, cycle and number of repetition are converted into 10 position digital signal parallel outputs to D/A converter, before transformation result is passed through
Put it is big after obtain -5V -5V sawtooth voltage, then obtain after power amplification maximum scan voltage range for -150V -
150V sawtooth voltage.Singlechip controller described in this example is using STM32F103RBT6 chips as control core, D/A
Converter realizes that preamplifier puts chip realization based on AD8221 instrument based on DAC900U chips, and power amplifier is based on PA08
Chip is realized.
Wherein, data acquisition unit 4 includes：The signal sampling circuit being sequentially connected, signal conditioning circuit, A/D converter
And FPGA controller；Its input is also an input of FPGA controller, and it is connected to the single-chip microcomputer in scanning power supply 3
Controller；Its output end is the nearly sound end of the current sampling resistor Rs in the signal sampling circuit, and it is connected to
Langmuir probe 1；Its another output end is also the output end of the FPGA controller, and it is connected at data by Serial Port Line
Manage unit 5.During work, signal sampling circuit samples to probe current and voltage signal, and signal conditioning circuit adjusts sampling voltage
Manage to be adapted to the voltage signal of A/D converter input requirements, FPGA controller singlechip controller in scanning power supply 3 is received
Control A/D conversions to carry out data acquisition after the trigger signal of output, and transformation result is stored and communicated.
As one embodiment of the present of invention, signal sampling circuit includes：Current sampling resistor Rs, voltage sampling resistor
Rb, potentiometer Ra, isolating difference amplifier U1 and general instrument amplifier U2；Current sampling resistor Rs one end connects scanning power supply
3 output, other end connection Langmuir probe 1 and potentiometer Ra one end；Potentiometer Ra other end connection voltage sampling electricity
Hinder Rb one end；The ground of voltage sampling resistor Rb other end connection data acquisition unit 4；Isolating difference amplifier U1 and common
Instrument amplifier U2 two inputs connect current sampling resistor Rs and voltage sampling resistor Rb both ends respectively；During work,
Probe current is converted to voltage signal by Rs and carries out differential amplification by isolating difference amplifier U1, and to Rs common port sum
Isolated according to the ground potential of collecting unit；Put after the attenuation network decay that probe voltage is made up of Ra and Rb by general instrument
Big device U2 amplifications；After signal sampling circuit, probe current and voltage are converted into -3V -3V voltage signal.
Signal conditioning circuit in this example is used for the output to isolating difference amplifier U1 and general instrument amplifier U2
Two-way voltage signal carries out active low-pass filter and direct current biasing, and they are all based on the realization of amplifier LF412 chips；A/D converter
Realized based on 12 A/D chips THS1206；FPGA controller is aided with SDRAM and deposited using EP4CE10F17C8 chips as control core
Reservoir and RS232 interface circuit, complete control to THS1206, the storage of data and the communication with data processing unit.
Fig. 2 shows the flow chart of the high integration Langmuir probe diagnostic method, according to embodiments of the present invention one
Kind high integration Langmuir probe diagnostic method comprises the following steps：
In step sl, driver sweep power supply output periodic serrations ripple scanning voltage.In one embodiment of the present of invention
In, the program code of control scanning power supply voltage magnitude, cycle and number of repetition is set in foregoing singlechip controller, touched
After sending out device triggering singlechip controller operation described program code, scanning power supply exports the amplitude specified, cycle and number of repetition
Sawtooch sweep voltage.Hereafter, processing enters step S2.
In step s 2, synchronous acquisition probe voltage, current data and result is sent to data processing unit.In this hair
In bright one embodiment, after trigger driver sweep power supply exports scanning voltage, foregoing singlechip controller passes through data
Line exports trigger signal to foregoing FPGA controller, FPGA controller control A/D converter, to the probe after sampling, nursing one's health
Voltage, electric current synchronize A/D collections.In the present embodiment, A/D transformation results are 12 position digital signals, in order to distinguish voltage
With electric current transformation result, 4 frame head marks are added to 12 position digital signal, and divide probe voltage and electricity with different frame Head Section
Signal is flowed, 16 final packaged bit data frames are stored in a buffering area of foregoing SDRAM memory.Hold in buffering area
After amount reaches specified size, all data are disposably sent to data processing unit by RS232 serial communications.In the present embodiment
In, buffer pool size is specified and is sized to 50000 bytes.The high-speed synchronous data that this step realizes two channel signals is adopted
Collection, and combine the data storage and the communication technology of Large Copacity, the shortcomings that efficiently solving traditional scheme poor real.Hereafter, locate
Reason enters step S3.
In step s3, data processing unit obtains I-V curve to the data prediction of collection.At one of the present invention
In embodiment, computer will receive the data of 50000 bytes in probe diagnostics experiment, and then computer passes through these
Over sampling, conditioning, A/D change after data convert into real probe voltage, current value, and be combined as an I-V curve.This
Afterwards, processing enters step S4.
In step s 4, according to the I-V curve calculating plasma parameter, and display processing curve and result.At this
In the embodiment of invention, computer will perform the program code of the analysis I-V curve, with reference to Langmuir probe diagnosis theory,
I-V curve is analyzed, obtains electron density, ion concentration, electron temperature, floating potential, plasma potential, electronic energy
The associated plasma parameters such as distribution equation are measured, and final result and processing curve are included on computer interface.
Hereinafter, a kind of high integration Langmuir probe diagnosis that the embodiment of the present invention is described in detail in accompanying drawing will be referred to further
The step S3 of method specific steps flow.
As shown in figure 3, data processing in a kind of high integration Langmuir probe diagnostic method according to embodiments of the present invention
To the data prediction of collection, the flow for obtaining I-V curve comprises the following steps unit.
In step S301, the data of collection are handled, obtain probe voltage measured value and current measurement value.At this
In one embodiment of invention, computer is first by the 50000 byte capture data acquisitions received to be surveyed probe voltage, electricity
Data signal corresponding to stream.Specific method is：It is successively a data according to two combination of bytes by the gathered data received
Frame, preceding 4 frame heads mark of data frame is then extracted, identify frame head and corresponding probe voltage or electricity are put into after replacing with 0000
Stream packets.Then, the probe voltage that is determined according to advance experiment, current digital signal and probe voltage, current value are surveyed
Linear corresponding relation is converted, and is probe voltage, current measurement by the data frame recovery in probe voltage, current data bag
Value.Fig. 4 show in the present embodiment reduce after probe voltage, current value with the sampling time change.Hereafter, processing enters step
Rapid S302.
In step s 302, I-V curve is obtained according to the probe voltage measured value and current measurement value.The present invention's
In one embodiment, the probe voltage of mechanical periodicity, current measurement value are combined as an I-V curve by computer.Specific method
For, first extracting cycle change probe voltage, effective sawtooch sweep part of current measurement value, be then combined as a plurality of I-
V curves, finally obtain an I-V curve for fully filtering out noise-generator plasma according to the method for average value filtering.This step has
Effect improves the signal to noise ratio and statistical accuracy of measurement data.Curve Plot1 is shown in the present embodiment to Fig. 5 embodiments in Fig. 5
Carry out the I-V curve that this step process obtains.Hereafter, processing enters step S303.
In step S303, the I-V curve is modified.In one embodiment of the invention, it is contemplated that foregoing
Bypass effect of the resistance decrement network (Ra and Rb series connection) to the probe current of measurement, and current sampling resistor Rs and probe
Between stray resistance the partial pressure of the probe voltage of measurement is acted on, following correct is carried out to the I-V curve：I=Imeas-
Vmeas/ (Ra+Rb), V=Vmeas-I × Rres, in formula, Imeas and Vmeas are the electric currents and electricity for not correcting I-V curve
Pressure value, I and V are the Current Voltage values of the I-V curve of amendment, and Rres is the current sampling resistor Rs and probe measured with universal meter
Between stray resistance.This step has taken into full account influence of the stray resistance to I-V curve measurement result in probe diagnostics circuit,
Improve the confidence level of measurement.In Fig. 5 curve Plot2 show curve Plot1 is carried out in the present embodiment this step process it
The revised I-V curve obtained afterwards.Hereafter, processing enters step S304.
In step s 304, uniform cubic spline interpolation is carried out to I-V curve after amendment, and passes through Salvitzky-
Golay filtering methods carry out digital smoothness processing to the I-V curve after interpolation.Numerical value uniform interpolation is carried out to I-V curve first
Processing, then by the width and the degree of polynomial of the moving window for configuring Salvitzky-Golay wave filters, is obtained optimal
I-V curve smooth effect.This step can effectively filter out radio noise and noise-generator plasma in I-V curve, realize smooth
I-V curve, second order derivation is carried out to it, can obtain smooth second dervative, in favor of follow-up calculating plasma potential and
Electron energy distribution equation.In one embodiment of the invention, it is smooth to I-V curve Plot2 progress S-G in Fig. 5 embodiments
The second dervative for handling and being not handled by obtain is as shown in Figure 6.
In one embodiment of the invention, I-V curve Plot2 analyses in Fig. 5 embodiments are calculated by step S4
The plasma parameter arrived is as follows：Floating potential=21.2V, plasma potential=39.2V, electron density=8.43 ×
1016m-3, equivalent electrons temperature=8.62eV, ion concentration=14.5 × 1016m-3。
As it will be easily appreciated by one skilled in the art that the foregoing is merely illustrative of the preferred embodiments of the present invention, not to
The limitation present invention, all any modification, equivalent and improvement made within the spirit and principles of the invention etc., all should be included
Within protection scope of the present invention.
Claims (7)
- A kind of 1. high integration Langmuir probe diagnostic system, it is characterised in that including Langmuir probe (1), trigger (2), Scanning power supply (3), data acquisition unit (4) and data processing unit (5)；The input connection plasma generator of the Langmuir probe (1), the output end of the Langmuir probe (1) are connected to The first input end of the data acquisition unit (4), the input connection plasma generator of the trigger (2) are described to sweep The input for retouching power supply (3) is connected to the output end of the trigger (2), the first output end of the scanning power supply (3) and institute State the second input connection of data acquisition unit (4), the second output end and the data acquisition list of the scanning power supply (3) The 3rd input connection of first (4), the output end of the data acquisition unit (4) connect the data processing unit (5)；The scanning power supply (3) includes：The singlechip controller being sequentially connected, D/A converter, preamplifier and power amplification Device；Input of the input of the singlechip controller as the scanning power supply (3), the second of the singlechip controller Second output end of the output end as the scanning power supply (3), the first output end of the singlechip controller connect the D/A Converter, the first output end of the output end of the power amplifier as the scanning power supply (3).
- 2. high integration Langmuir probe diagnostic system as claimed in claim 1, it is characterised in that the data acquisition unit (4) include：The signal sampling circuit being sequentially connected, signal conditioning circuit, A/D converter and FPGA controller；The signal takes First input end of the first input end of sample circuit as the data acquisition unit (4), the second of the signal sampling circuit Second input of the input as the data acquisition unit (4), the input of the FPGA controller is as the data 3rd input of collecting unit (4), the output of the output end of the FPGA controller as the data acquisition unit (4) End.
- 3. high integration Langmuir probe diagnostic system as claimed in claim 2, it is characterised in that the signal sampling circuit Including：Current sampling resistor Rs, voltage sampling resistor Rb, potentiometer Ra, isolating difference amplifier U1 and general instrument amplifier U2；First input end of the described current sampling resistor Rs one end as the signal sampling circuit, the current sampling resistor Rs Second input of the other end as the signal sampling circuit；The potentiometer Ra and the voltage sampling resistor Rb are sequentially connected in series between described current sampling resistor Rs one end and ground；Two inputs of the isolating difference amplifier U1 are connected to the both ends of the current sampling resistor Rs, it is described every Output end from difference amplifier U1 is connected to the first input end of the signal conditioning circuit；Two inputs of the general instrument amplifier U2 are connected to the both ends of the voltage sampling resistor Rb, described general Logical instrument amplifier U2 output end is connected to the second input of the signal conditioning circuit.
- 4. the high integration Langmuir probe diagnostic system as described in claim any one of 1-3, it is characterised in that during work, Trigger (2) the transmission pulse trigger signal gives the scanning power supply (3), trigger its produce specify amplitude, specify the cycle and The sawtooth voltage of number of repetition, drive the Langmuir probe (1)；The data acquisition unit (4) is to bright Miao simultaneously The voltage of your probe (1), current data carry out quick repeatedly synchronous acquisition and storage；Data acquisition is disposable by result after terminating Send to the data processing unit (5), it automatically process by the computer program of the data processing unit and Analysis, and the VA characteristic curve of collection and plasma parameter are included on computer interface.
- A kind of 5. diagnostic method of the high integration Langmuir probe diagnostic system based on described in claim 1, it is characterised in that Comprise the steps：S1：Driver sweep power supply exports periodic serrations ripple scanning voltage；S2：Synchronous acquisition probe voltage, current data simultaneously send it to data processing unit；S3：Data processing unit obtains I-V curve after handling the data of collection；S4：According to the I-V curve calculating plasma parameter, and display processing curve and result.
- 6. diagnostic method as claimed in claim 5, it is characterised in that step S3 is specially：S301：The data of collection are handled, obtain probe voltage measured value and current measurement value；S302：I-V curve is obtained according to the probe voltage measured value and current measurement value；S303：The I-V curve is modified；S304：Uniform cubic spline interpolation is carried out to I-V curve after amendment, and passes through Salvitzky-Golay filtering methods pair I-V curve after interpolation carries out digital smoothness processing.
- 7. diagnostic method as claimed in claim 6, it is characterised in that in step S303, using formula I=Imeas- Vmeas/ (Ra+Rb) and V=Vmeas-I × Rres are modified to the I-V curve；Wherein, ImeasAnd VmeasIt is I- before correcting The current value and magnitude of voltage of V curves, I and V are the Current Voltage values of revised I-V curve, RresBe current sampling resistor Rs and Stray resistance between probe end.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109104805A (en) * | 2018-07-25 | 2018-12-28 | 北京航空航天大学 | Langmuir probe, Langmuir probe diagnostic system and its diagnostic method |
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| CN114071848B (en) * | 2021-09-29 | 2024-02-23 | 太原市华纳方盛科技有限公司 | Plasma diagnostic circuit and method |
| CN114923972A (en) * | 2022-04-21 | 2022-08-19 | 哈尔滨医科大学 | Mixed gas component detection device and method |
| CN115407385B (en) * | 2022-07-21 | 2024-03-08 | 上海轩田智能科技股份有限公司 | Multi-point automatic test method and system for electric propulsion beam |
Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1988106A (en) * | 2006-12-01 | 2007-06-27 | 大连理工大学 | Langmuir probe plasma diagnostic method based on virtual instrument |
| CN101056493A (en) * | 2007-05-10 | 2007-10-17 | 东北大学 | Low-temperature plasma diagnosis device |
| CN102650663A (en) * | 2011-02-28 | 2012-08-29 | 中国科学院空间科学与应用研究中心 | Method for acquiring voltage-current characteristic curve of plasma |
| CZ304249B6 (en) * | 2009-11-18 | 2014-01-29 | Fyzikální ústav AV ČR, v.v.i. | Synchronization method of measuring for plasma probe diagnostics and measuring system for making the same |
| CN204652766U (en) * | 2015-04-20 | 2015-09-16 | 安徽理工大学 | Based on the Langmuir probe diagnostic device of pulse modulation scanning power supply |
-
2016
- 2016-11-08 CN CN201610980115.0A patent/CN106568805B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN1988106A (en) * | 2006-12-01 | 2007-06-27 | 大连理工大学 | Langmuir probe plasma diagnostic method based on virtual instrument |
| CN101056493A (en) * | 2007-05-10 | 2007-10-17 | 东北大学 | Low-temperature plasma diagnosis device |
| CZ304249B6 (en) * | 2009-11-18 | 2014-01-29 | Fyzikální ústav AV ČR, v.v.i. | Synchronization method of measuring for plasma probe diagnostics and measuring system for making the same |
| CN102650663A (en) * | 2011-02-28 | 2012-08-29 | 中国科学院空间科学与应用研究中心 | Method for acquiring voltage-current characteristic curve of plasma |
| CN204652766U (en) * | 2015-04-20 | 2015-09-16 | 安徽理工大学 | Based on the Langmuir probe diagnostic device of pulse modulation scanning power supply |
Non-Patent Citations (3)
| Title |
|---|
| Plasma characterization of a test setup of RF-driven negative ion source by a Langmuir probe system;Peng Zhao 等;《Nuclear Instruments and Methods in Physics Research A》;20170630;90-95 * |
| 介质管等离子体物理特性自动测量系统设计;徐灵飞 等;《测控技术》;20110930;第30卷(第9期);995-997 * |
| 郎穆尔探针低温低压等离子体诊断;王晓冬 等;《真空科学与技术学报》;20131031;第33卷(第10期);8-12 * |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109104805A (en) * | 2018-07-25 | 2018-12-28 | 北京航空航天大学 | Langmuir probe, Langmuir probe diagnostic system and its diagnostic method |
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