CN106568805A - Highly-integrated Langmuir probe diagnosis system and method - Google Patents
Highly-integrated Langmuir probe diagnosis system and method Download PDFInfo
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Abstract
The invention discloses a highly-integrated Langmuir probe diagnosis system and method. The highly-integrated Langmuir probe diagnosis system comprises a Langmuir probe, a trigger, a scanning power supply, a data acquisition unit and a data processing unit. The trigger transmits a pulse trigger signal to the scanning power supply via an optical fiber to trigger generation of sawtooth voltage with designated amplitude, period and repeat account, and the sawtooth voltage is loaded onto the Langmuir probe; the data acquisition unit carries out rapid, multiple and synchronous acquisition and storage on the voltage and current data of the Langmuir probe; and after completion of data acquisition, all the results are sent to the data processing unit in one shot, a data processing program on a computer is employed for automatic processing and analysis, and an acquired volt-ampere characteristic curve and acquired plasma parameters are displayed. The highly-integrated Langmuir probe diagnosis system has high automation degree and integrated level, can realize high-speed synchronous data acquisition and large-quantity data storage and communication, employs data processing for automatic processing and analysis of acquired data and provides a good man-machine interaction interface for displaying and recording of processing results.
Description
Technical field
The invention belongs to Plasma Diagnostics field, examines more particularly, to a kind of high integration Langmuir probe
Disconnected system and method.
Background technology
Conventional plasma diagnostics means include emission spectrum, Langmuir probe, induced with laser, microwave interference etc..It is bright
Miao Er probes are a kind of important Plasma parameter diagnosis instruments, and relative to additive method, it has structural principle simple, can
The advantages of measuring various plasma parameters.Its ultimate principle is a tiny metal probe to be stretched in plasma,
To probe plus the ion and electronics by positive scanning voltage is born, attracted in plasma, so as to electric current is formed on probe.
By measuring probe voltage and electric current, obtain the I-V curve of probe and carry out analytical calculation, you can obtain associated plasma ginseng
Number.
Current Langmuir probe diagnostic system exist volume it is larger, it is expensive the shortcomings of, some experimentation institutes
Probe system is often built using commercial signal generator, data collecting card, oscillograph, and is joined using adjusting manually
Number, manual measurement and analytical data, the automaticity for causing system is low, integrated level is not high, the real-time and precision of measurement compared with
Difference.
The content of the invention
For the defect of prior art, it is an object of the invention to provide a kind of high integration Langmuir probe diagnostic system
And method, it is intended in solving prior art, integrated level is not high, the poor problem of the real-time and precision of measurement.
The invention provides a kind of high integration Langmuir probe diagnostic system, including Langmuir probe, trigger, scanning
Power supply, data acquisition unit and data processing unit；The input connection plasma generator of the Langmuir probe, it is described
The outfan of Langmuir probe is connected to the first input end of the data acquisition unit, the input of the trigger connect from
Daughter generator, the input of the scanning power supply are connected to the outfan of the trigger, and the first of the scanning power supply is defeated
Go out end to be connected with the second input of the data acquisition unit, the second outfan and the data acquisition of the scanning power supply
The 3rd input connection of unit, the outfan of the data acquisition unit connect the data processing unit.
Further, trigger is strictly obeyed with ensureing to diagnose by the control system remotely control of plasma generator
The sequential of the control system；The trigger output pulse triggering signal is changed by electrical-optical-electrical, by fiber-optic transfer to institute
Scanning power supply is stated, Electro Magnetic Compatibility is improved.
Further, the scanning power supply includes：The singlechip controller being sequentially connected, D/A converter, preposition amplification
Device and power amplifier；Input of the input of the singlechip controller as the scanning power supply, the single-chip microcomputer control
Second outfan of second outfan of device processed as the scanning power supply, the first outfan connection of the singlechip controller
The D/A converter, the first outfan of the outfan of the power amplifier as the scanning power supply.Singlechip controller
By D/A converter described in parallel data line traffic control, D/A transformation results export small-signal after preamplifier amplification
Sawtooth waveforms, then the big signal sawtooth waveforms of up to hectovolt or so is enlarged into through the power amplifier；The scanning power supply output
The parameters such as the amplitude of sawtooth voltage, cycle and number of repetition are exported to D/A by the singlechip controller programme-control and are changed
The parallel digital signal of device is adjusted；Output voltage range of the amplitude of the scanning voltage no more than the power amplifier,
In order to obtain the complete I-V curve from ion saturation region to electronics saturation region, the amplitude of the scanning voltage should be greater than being equal to
Plasma potential；The cycle of the scanning voltage can not be less than the ratio of scanning voltage scope and the power amplifier slew rate
Value；In order to avoid probe is overheated, the number of repetition of the scanning voltage and the product in cycle should be less than 1 second.
Further, the data acquisition unit includes：The signal sampling circuit being sequentially connected, signal conditioning circuit,
A/D converter and FPGA controller；The first input end of the signal sampling circuit as the data acquisition unit first
Input, the second input of the second input of the signal sampling circuit as the data acquisition unit, the FPGA
Threeth input of the input of controller as the data acquisition unit, the outfan of the FPGA controller is used as described
The outfan of data acquisition unit.Signal sampling circuit obtains two-way small signal to probe current and voltage sampling, connection
To the signal conditioning circuit；Input voltage is filtered and is adjusted to the suitable A/D converter by the signal conditioning circuit
Input range；The A/D converter is connected to the FPGA controller through parallel data line；The FPGA controller is to A/D
Conversion is controlled, and gathered data is stored, and transformation result is disposably sent to the data by Serial Port Line
Reason unit.
Further, the signal sampling circuit includes：Current sampling resistor Rs, voltage sampling resistor Rb, potentiometer
Ra, isolating difference amplifier U1 and general instrument amplifier U2；Described current sampling resistor Rs one end is used as the sample of signal
The first input end of circuit, second input of the current sampling resistor Rs other ends as the signal sampling circuit；Institute
State potentiometer Ra and the voltage sampling resistor Rb is sequentially connected in series between described current sampling resistor Rs one end and ground；It is described every
The two ends of the current sampling resistor Rs are connected to from two inputs of difference amplifier U1, the isolating difference amplifies
The outfan of device U1 is connected to the first input end of the signal conditioning circuit；Two inputs of the general instrument amplifier U2
End is connected to the two ends of the voltage sampling resistor Rb, and the outfan of the general instrument amplifier U2 is connected to the letter
Second input of number modulate circuit.
Further, during work, the trigger transmission pulse trigger gives the scanning power supply, triggers its generation
Specified amplitude, the sawtooth voltage for specifying cycle and number of repetition, drive the Langmuir probe；While the data acquisition list
Unit carries out quick repeatedly synchronous acquisition and storage to the voltage of the Langmuir probe, current data；Data acquisition will after terminating
As a result disposably send to the data processing unit, which is carried out automatically by the computer program of the data processing unit
Process and analyze, and the VA characteristic curve and plasma parameter of collection are included on computer interface.
Present invention also offers a kind of diagnostic method based on above-mentioned high integration Langmuir probe diagnostic system, including
Following step：
S1：Driver sweep power supply exports periodic serrations ripple scanning voltage；
S2：Synchronous acquisition probe voltage, current data simultaneously send it to data processing unit；
S3：Data processing unit obtains I-V curve after processing to the data for gathering；
S4：According to the I-V curve calculating plasma parameter, and display processing curve and result.
Further, step S3 is specially：
S301：Data to gathering are processed, and obtain probe voltage measured value and current measurement value；
S302：I-V curve is obtained according to the probe voltage measured value and current measurement value；
S303：The I-V curve is modified；
S304：Uniform cubic spline interpolation is carried out to I-V curve after amendment, and by Salvitzky-Golay filtering sides
Method carries out digital smoothness process to the I-V curve after interpolation.
Further, in step S303, using formula I=Imeas-Vmeas/ (Ra+Rb) and V=Vmeas-I ×
Rres is modified to the I-V curve；Wherein, Imeas and Vmeas be amendment before I-V curve current value and magnitude of voltage, I
It is the current/voltage value of revised I-V curve with V, Rres is the stray electrical between current sampling resistor Rs and probe end
Resistance.
By the contemplated above technical scheme of the present invention, compared with prior art, the present invention has following technological merit：
(1) present invention builds hardware circuit using small electronic chip and device, and using the data processing on computer
Software collection and processing data, improve the integrated level and automaticity of system, and reduce the cost and volume of system.
(2) present invention builds data acquisition unit by core of FPGA controller, realizes the data acquisition of high-speed synchronous,
And mass data storage and communication, it is ensured that the real-time of measurement.
(3) present invention in a plasma diagnostics can quick multi collect I-V curve, and carry out average value filtering,
Improve the statistical accuracy of data.
(4) present invention considers impact of the interlock circuit parameter to I-V curve and is corrected, and improve data can
Reliability.
Description of the drawings
Fig. 1 is the operating diagram of the high integration Langmuir probe diagnostic system according to the embodiment of the present invention；
Fig. 2 is the flow chart of the high integration Langmuir probe diagnostic method according to the embodiment of the present invention；
In a kind of high integration Langmuir probe diagnostic method Fig. 3 according to embodiments of the present invention, data processing unit is to adopting
The data prediction of collection, the flow chart for obtaining I-V curve；
Fig. 4 is the time domain according to the probe voltage, current data gathered in plasma diagnostics of the embodiment of the present invention
Curve；
Fig. 5 is the right of the I-V curve before and after the amendment obtained in a plasma diagnostics according to the embodiment of the present invention
Compare schematic diagram；
Fig. 6 is to pass through in a plasma diagnostics according to the embodiment of the present invention and obtain without digital smoothness process
Second derivative curves contrast schematic diagram.
Specific embodiment
In order that the objects, technical solutions and advantages of the present invention become more apparent, it is below in conjunction with drawings and Examples, right
The present invention is further elaborated.It should be appreciated that specific embodiment described herein is only to explain the present invention, and
It is not used in the restriction present invention.
The invention provides a kind of high integration Langmuir probe diagnostic system and method, for examining in a plasma
Quick repeatedly measurement probe VA characteristic curve (hereinafter referred to as I-V curve) in disconnected, and automatically analyze and obtain electron density, ion
The associated plasma parameters such as density, plasma potential, floating potential, electron temperature and Electron energy distribution.The present invention can
To realize in a plasma discharge quick multi collect I-V curve and automatically process, analyze and obtain associated plasma
Parameter.
In embodiments of the present invention, high integration Langmuir probe diagnostic system includes：Langmuir probe, scanning power supply,
Trigger, data acquisition unit and data processing unit；During work, the trigger is given by fiber-optic transfer pulse triggering signal
The scanning power supply, triggers which and produces the sawtooth voltage for specifying amplitude, cycle and number of repetition, and driving is stretched in plasma
The Langmuir probe；Simultaneously the data acquisition unit is carried out quickly to the voltage of the Langmuir probe, current data
Repeatedly synchronous acquisition and storage；Data acquisition after terminating disposably sends result to the data processing unit, by described
The computer program of data processing unit is automatically processed to which and is analyzed, and (I-V is bent by the VA characteristic curve of collection
Line) and calculated plasma parameter be displayed on computer interface.
In embodiments of the present invention, trigger is tight to ensure diagnosis by the control system remotely control of plasma generator
Lattice obey the sequential of the control system；The trigger output pulse triggering signal is changed by electrical-optical-electrical, is passed by optical fiber
The scanning power supply is transported to, the interference of electromagnetic signal around the plasma generator is prevented, Electro Magnetic Compatibility is improved.
In embodiments of the present invention, scanning power supply is put by singlechip controller, D/A converter, preamplifier and power
Big device composition；, by D/A converter described in parallel data line traffic control, D/A transformation results are through described for the singlechip controller
Preamplifier exports small-signal sawtooth waveforms, then the big letter that up to hectovolt or so is enlarged into through the power amplifier after amplifying
Number sawtooth waveforms；The scanning power supply exports the amplitude of sawtooth voltage, and the parameter such as cycle and number of repetition is by the single-chip microcomputer control
Device programme-control processed is exported to the parallel digital signal of D/A converter and is adjusted；The amplitude of scanning voltage is no more than the power
The output voltage range of amplifier, in order to obtain the complete I-V curve from ion saturation region to electronics saturation region, the scanning
The amplitude of voltage is should be greater than equal to plasma potential；The cycle of the scanning voltage can not be less than scope and the institute of scanning voltage
State the ratio of power amplifier slew rate；In order to avoid probe it is overheated, the number of repetition of the scanning voltage and the product in cycle
1 second should be usually no more than.
In embodiments of the present invention, data acquisition unit is by signal sampling circuit, signal conditioning circuit, A/D converter and
FPGA controller is constituted；The signal sampling circuit obtains two-way small signal, is connected to probe current and voltage sampling
The signal conditioning circuit；Input voltage is filtered and is adjusted to the defeated of the suitable A/D converter by the signal conditioning circuit
Enter scope；The A/D converter is connected to the FPGA controller through parallel data line；The FPGA controller turns to A/D
Change and be controlled, and gathered data is stored, transformation result is disposably sent to the data processing by Serial Port Line
Unit.
In embodiments of the present invention, signal sampling circuit is by current sampling resistor Rs, voltage sampling resistor Rb, potentiometer
Ra, isolating difference amplifier U1 and general instrument amplifier U2 compositions；Described current sampling resistor Rs one end connects the scanning
The output of power supply, the other end connect one end of the Langmuir probe and the potentiometer Ra；The other end of the potentiometer Ra
Connect one end of the voltage sampling resistor Rb；The other end of the voltage sampling resistor Rb connects the data acquisition unit
Ground；Two inputs of the isolating difference amplifier U1 and general instrument amplifier U2 connect the current sampling resistor respectively
The two ends of Rs and voltage sampling resistor Rb.
High integration Langmuir probe diagnostic method provided in an embodiment of the present invention, comprises the following steps：
S1：Driver sweep power supply exports periodic serrations ripple scanning voltage；
S2：Synchronous acquisition probe voltage, current data simultaneously send it to data processing unit；
S3：Data processing unit obtains I-V curve after processing to the data for gathering；
S4：According to the I-V curve calculating plasma parameter, and display processing curve and result.
In embodiments of the present invention, step S3 is comprised the following steps：
S301：Data to gathering are processed, and obtain probe voltage measured value and current measurement value；
S302：I-V curve is obtained according to the probe voltage measured value and current measurement value；
S303：The I-V curve is modified；
S304：Uniform cubic spline interpolation is carried out to I-V curve after amendment, and by Salvitzky-Golay filtering sides
Method carries out digital smoothness process to the I-V curve after interpolation.
In embodiments of the present invention, step S303 is modified to I-V curve using equation below.I=Imeas-
Vmeas/ (Ra+Rb), V=Vmeas-I × Rres, in formula, Imeas and Vmeas is the electric current and voltage of the front I-V curve of amendment
Value, I and V is the current/voltage value of revised I-V curve, and Rres is spuious between current sampling resistor Rs and probe end
Resistance.
In order that the objects, technical solutions and advantages of the present invention become more apparent, root is described in detail below in conjunction with accompanying drawing
According to the example embodiment of the present invention, the present invention is described in further details.It should be appreciated that specific embodiment described herein
Only a part of embodiment of the invention, of the invention not limited by example embodiment as described herein.Based on the present invention
Described in embodiment, all other enforcement that those skilled in the art are obtained in the case where creative work is not paid
Example all should fall within the scope of protection of the present invention.
Fig. 1 shows the structural representation of the high integration Langmuir probe diagnostic system of one embodiment of the present of invention,
Including：Langmuir probe 1, trigger 2, scanning power supply 3, data acquisition unit 4 and data processing unit 5；Langmuir probe 1
Input connects plasma generator, and the outfan of Langmuir probe 1 is connected to the first input end of data acquisition unit 4, touches
The input connection plasma generator of device 2 is sent out, the input of scanning power supply 3 is connected to the outfan of trigger 2, scanning power supply
3 the first outfan is connected with the second input of data acquisition unit 4, the second outfan of scanning power supply 3 and data acquisition
The 3rd input connection of unit 4, the outfan connection data processing unit 5 of data acquisition unit 4.
Wherein, the input of trigger 2 is connected to the control system of plasma generator, and outfan is connected to scanning electricity
Source 3；When the control system of plasma generator goes to the instruction of probe diagnostics, trigger 2 receives control system output
Pulse signal, by its internal electrical-optical-electrical change-over circuit, by trigger by fiber-optic transfer to scanning power supply 3, and then
Trigger its output scanning voltage.
Wherein, scanning power supply 3 includes：The singlechip controller being sequentially connected, D/A converter, preamplifier and power
Amplifier；Its input is also the input of singlechip controller, and which is connected to the outfan of trigger 2；Its one is defeated
Go out the outfan that end is also power amplifier, which is connected to the current sampling resistor Rs in data acquisition unit 4；It another
Outfan is an I/O port of singlechip controller, and which is connected to the FPGA controller in data acquisition unit 4.During work,
Singlechip controller enters interrupt handling routine after the trigger for receiving the transmission of trigger 2, on the one hand output pulse letter
Number to the FPGA controller in data acquisition unit 4 so as to trigger data acquisition, on the other hand by the scanning voltage for pre-setting
The parameters such as amplitude, cycle and number of repetition are converted into 10 position digital signal parallel outputs to D/A converter, and transformation result is through front
Put it is big after obtain the sawtooth voltage of -5V -5V, then maximum scan voltage range is obtained after power amplification for -150V -
The sawtooth voltage of 150V.Singlechip controller described in this example with STM32F103RBT6 chips as control core, D/A
Transducer realizes that based on DAC900U chips preamplifier puts chip realization based on AD8221 instrument, and power amplifier is based on PA08
Chip is realized.
Wherein, data acquisition unit 4 includes：The signal sampling circuit being sequentially connected, signal conditioning circuit, A/D converter
And FPGA controller；Its input is also an input of FPGA controller, and which is connected to the single-chip microcomputer in scanning power supply 3
Controller；Its outfan is the nearly sound end of the current sampling resistor Rs in the signal sampling circuit, and which is connected to
Langmuir probe 1；Its another outfan is also the outfan of the FPGA controller, and which passes through Serial Port Line and is connected at data
Reason unit 5.During work, signal sampling circuit is sampled to probe current and voltage signal, and sampling voltage is adjusted by signal conditioning circuit
Manage the voltage signal for suitable A/D converter input requirements, FPGA controller singlechip controller in scanning power supply 3 is received
A/D conversions are controlled after the trigger of output carries out data acquisition, and transformation result is stored and communicated.
Used as one embodiment of the present of invention, signal sampling circuit includes：Current sampling resistor Rs, voltage sampling resistor
Rb, potentiometer Ra, isolating difference amplifier U1 and general instrument amplifier U2；Current sampling resistor Rs one end connects scanning power supply
One end of 3 output, other end connection Langmuir probe 1 and potentiometer Ra；The other end connection voltage sampling electricity of potentiometer Ra
One end of resistance Rb；The other end of voltage sampling resistor Rb connects the ground of data acquisition unit 4；Isolating difference amplifier U1 and common
Two inputs of instrument amplifier U2 connect the two ends of current sampling resistor Rs and voltage sampling resistor Rb respectively；During work,
Probe current is converted to voltage signal by Rs and carries out differential amplification, and the common port sum to Rs through isolating difference amplifier U1
Isolated according to the ground potential of collecting unit；Probe voltage is put through general instrument after being decayed by the attenuation network that Ra and Rb are constituted
Big device U2 amplifies；After signal sampling circuit, probe current and voltage are converted into the voltage signal of -3V -3V.
Signal conditioning circuit in this example is for the output to isolating difference amplifier U1 and general instrument amplifier U2
Two-way voltage signal carries out active low-pass filter and direct current biasing, and they are all based on the realization of amplifier LF412 chip；A/D converter
Realized based on 12 A/D chips THS1206；FPGA controller is aided with SDRAM and deposits with EP4CE10F17C8 chips as control core
Reservoir and RS232 interface circuits, complete the control to THS1206, the storage of data and the communication with data processing unit.
The flow chart that Fig. 2 shows the high integration Langmuir probe diagnostic method, according to embodiments of the present invention one
Plant high integration Langmuir probe diagnostic method to comprise the following steps：
In step sl, driver sweep power supply output periodic serrations ripple scanning voltage.In one embodiment of the present of invention
In, the program code of control scanning power supply voltage magnitude, cycle and number of repetition is set in aforementioned singlechip controller, is being touched
After sending out device triggering singlechip controller operation described program code, scanning power supply exports the amplitude specified, cycle and number of repetition
Sawtooth sweep voltage.Hereafter, process enters step S2.
In step s 2, synchronous acquisition probe voltage, current data result is sent to data processing unit.At this
In bright one embodiment, after trigger driver sweep power supply output scanning voltage, aforementioned singlechip controller passes through data
Line exports trigger to aforementioned FPGA controller, FPGA controller control A/D converter, to the probe after sampling, conditioning
Voltage, electric current synchronize A/D collections.In the present embodiment, A/D transformation results are 12 position digital signals, in order to distinguish voltage
With electric current transformation result, add 4 frame head labellings to 12 position digital signal, and with different frame Head Section point probe voltage and electricity
Stream signal, 16 final packaged bit data frames are stored in a relief area of aforementioned SDRAM memory.Hold in relief area
After amount reaches specified size, all data are disposably sent to data processing unit through RS232 serial communications.In the present embodiment
In, buffer pool size is specified and is sized to 50000 bytes.This step realizes the high-speed synchronous data of two channel signals and adopts
Collection, and jumbo data storage and communication technology are combined, efficiently solve the shortcoming of traditional scheme poor real.Hereafter, locate
Reason is into step S3.
In step s3, data processing unit obtains I-V curve to the data prediction for gathering.At one of the present invention
In embodiment, computer will receive the data of 50000 bytes in probe diagnostics experiment, and then computer is by these Jing
Over sampling, conditioning, A/D change after data convert into real probe voltage, current value, and be combined as an I-V curve.This
Afterwards, process enters step S4.
In step s 4, according to the I-V curve calculating plasma parameter, and display processing curve and result.At this
In inventive embodiment, computer will perform the program code of the analysis I-V curve, with reference to Langmuir probe diagnosis theory,
I-V curve is analyzed, electron density, ion concentration, electron temperature, floating potential, plasma potential, electronic energy is obtained
The associated plasma parameters such as amount distribution equation, and final result and process curve are included on computer interface.
Hereinafter, a kind of high integration Langmuir probe diagnosis that accompanying drawing describes the embodiment of the present invention in detail will be referred to further
The step of method S3 concrete steps flow process.
As shown in figure 3, data processing in a kind of high integration Langmuir probe diagnostic method according to embodiments of the present invention
Data prediction of the unit to collection, the flow process for obtaining I-V curve are comprised the following steps.
In step S301, the data to gathering are processed, and obtain probe voltage measured value and current measurement value.At this
In one embodiment of invention, computer is first by the 50000 byte capture data acquisitions for receiving by surveying probe voltage, electricity
Flow corresponding digital signal.Concrete grammar is：By the gathered data for receiving successively according to two combination of bytes be a data
Frame, then extracts front 4 frame head labellings of Frame, recognizes frame head and is put into corresponding probe voltage or electricity after replacing with 0000
Stream packets.Then, according to the probe voltage, current digital signal and surveyed probe voltage, current value that experiment determines in advance
Linear corresponding relation is converted, and is probe voltage, current measurement by the data frame recovery in probe voltage, current data bag
Value.Fig. 4 shows the change of the probe voltage after reducing in the present embodiment, current value with the sampling time.Hereafter, process enters step
Rapid S302.
In step s 302, I-V curve is obtained according to the probe voltage measured value and current measurement value.The present invention's
In one embodiment, the probe voltage of mechanical periodicity, current measurement value are combined as an I-V curve by computer.Concrete grammar
For, first extracting cycle change probe voltage, effective sawtooth sweep part of current measurement value, be then combined as a plurality of I-
V curves, finally obtain an I-V curve for fully filtering noise-generator plasma according to the method for average value filtering.This step has
Effect improves the signal to noise ratio and statistical accuracy of measurement data.In Fig. 5, curve Plot1 is shown in the present embodiment to Fig. 5 embodiments
Carry out the I-V curve that this step process is obtained.Hereafter, process enters step S303.
In step S303, the I-V curve is modified.In one embodiment of the invention, it is contemplated that aforementioned
The bypass effect of probe current of the resistance decrement network (series connection of Ra and Rb) to measuring, and current sampling resistor Rs and probe
Between stray resistance to measure probe voltage partial pressure effect, following amendment is carried out to the I-V curve：I=Imeas-
Vmeas/ (Ra+Rb), V=Vmeas-I × Rres, in formula, Imeas and Vmeas is the electric current and electricity for not correcting I-V curve
Pressure value, I and V are the current/voltage values of the I-V curve of amendment, and Rres is the current sampling resistor Rs and probe measured with circuit tester
Between stray resistance.This step has taken into full account impact of the stray resistance to I-V curve measurement result in probe diagnostics circuit,
Improve the credibility of measurement.In Fig. 5 curve Plot2 curve Plot1 is carried out in showing the present embodiment this step process it
The revised I-V curve for obtaining afterwards.Hereafter, process enters step S304.
In step s 304, uniform cubic spline interpolation is carried out to I-V curve after amendment, and passes through Salvitzky-
Golay filtering methods carry out digital smoothness process to the I-V curve after interpolation.Numerical value uniform interpolation is carried out to I-V curve first
Process, then by configure Salvitzky-Golay wave filter moving window width and the degree of polynomial, obtain optimum
I-V curve smooth effect.This step can effectively filter out radio noise and noise-generator plasma in I-V curve, realize smooth
I-V curve, second order derivation is carried out to which, smooth second dervative can be obtained, be beneficial to follow-up calculating plasma potential and
Electron energy distribution equation.In one embodiment of the invention, carry out S-G to smooth to I-V curve Plot2 in Fig. 5 embodiments
The second dervative for processing and being not handled by obtaining is as shown in Figure 6.
In one embodiment of the invention, I-V curve Plot2 analytical calculations in Fig. 5 embodiments are obtained by step S4
The plasma parameter for arriving is as follows：Floating potential=21.2V, plasma potential=39.2V, electron density=8.43 ×
1016m-3, equivalent electrons temperature=8.62eV, ion concentration=14.5 × 1016m-3。
As it will be easily appreciated by one skilled in the art that the foregoing is only presently preferred embodiments of the present invention, not to
The present invention, all any modification, equivalent and improvement made within the spirit and principles in the present invention etc. are limited, all should be included
Within protection scope of the present invention.
Claims (8)
1. a kind of high integration Langmuir probe diagnostic system, it is characterised in that including Langmuir probe (1), trigger (2),
Scanning power supply (3), data acquisition unit (4) and data processing unit (5)；
The input connection plasma generator of the Langmuir probe (1), the outfan of the Langmuir probe (1) are connected to
The first input end of the data acquisition unit (4), the input connection plasma generator of the trigger (2) are described to sweep
The input for retouching power supply (3) is connected to the outfan of the trigger (2), the first outfan of the scanning power supply (3) and institute
State the second input connection of data acquisition unit (4), the second outfan and the data acquisition list of the scanning power supply (3)
The 3rd input connection of first (4), the outfan of the data acquisition unit (4) connect the data processing unit (5).
2. high integration Langmuir probe diagnostic system as claimed in claim 1, it is characterised in that the scanning power supply (3)
Including：The singlechip controller being sequentially connected, D/A converter, preamplifier and power amplifier；The singlechip controller
Input as the scanning power supply (3) input, the second outfan of the singlechip controller is used as the scanning
Second outfan of power supply (3), the first outfan of the singlechip controller connect the D/A converter, and the power is put
First outfan of the outfan of big device as the scanning power supply (3).
3. high integration Langmuir probe diagnostic system as claimed in claim 1 or 2, it is characterised in that the data acquisition
Unit (4) includes：The signal sampling circuit being sequentially connected, signal conditioning circuit, A/D converter and FPGA controller；The letter
First input end of the first input end of number sample circuit as the data acquisition unit (4), the signal sampling circuit
Second input of second input as the data acquisition unit (4), the input of the FPGA controller is used as described
3rd input of data acquisition unit (4), the outfan of the FPGA controller is used as the defeated of the data acquisition unit (4)
Go out end.
4. high integration Langmuir probe diagnostic system as claimed in claim 3, it is characterised in that the signal sampling circuit
Including：Current sampling resistor Rs, voltage sampling resistor Rb, potentiometer Ra, isolating difference amplifier U1 and general instrument amplifier
U2；
First input end of the described current sampling resistor Rs one end as the signal sampling circuit, the current sampling resistor Rs
Second input of the other end as the signal sampling circuit；
The potentiometer Ra and the voltage sampling resistor Rb are sequentially connected in series between described current sampling resistor Rs one end and ground；
Two inputs of the isolating difference amplifier U1 are connected to the two ends of the current sampling resistor Rs, it is described every
The first input end of the signal conditioning circuit is connected to from the outfan of difference amplifier U1；
Two inputs of the general instrument amplifier U2 are connected to the two ends of the voltage sampling resistor Rb, described general
The outfan of logical instrument amplifier U2 is connected to the second input of the signal conditioning circuit.
5. the high integration Langmuir probe diagnostic system as described in any one of claim 1-4, it is characterised in that during work,
Trigger (2) the transmission pulse trigger give the scanning power supply (3), trigger its produce specify amplitude, specify the cycle and
The sawtooth voltage of number of repetition, drives the Langmuir probe (1)；The data acquisition unit (4) is to bright Miao simultaneously
The voltage of your probe (1), current data carry out quick repeatedly synchronous acquisition and storage；Data acquisition is disposable by result after terminating
Send to the data processing unit (5), which is carried out automatically processing by the computer program of the data processing unit and
Analysis, and the VA characteristic curve and plasma parameter of collection are included on computer interface.
6. a kind of diagnostic method of the high integration Langmuir probe diagnostic system based on described in claim 1, it is characterised in that
Comprise the steps：
S1：Driver sweep power supply exports periodic serrations ripple scanning voltage；
S2：Synchronous acquisition probe voltage, current data simultaneously send it to data processing unit；
S3：Data processing unit obtains I-V curve after processing to the data for gathering；
S4：According to the I-V curve calculating plasma parameter, and display processing curve and result.
7. diagnostic method as claimed in claim 6, it is characterised in that step S3 is specially：
S301：Data to gathering are processed, and obtain probe voltage measured value and current measurement value；
S302：I-V curve is obtained according to the probe voltage measured value and current measurement value；
S303：The I-V curve is modified；
S304：Uniform cubic spline interpolation is carried out to I-V curve after amendment, and passes through Salvitzky-Golay filtering methods pair
I-V curve after interpolation carries out digital smoothness process.
8. diagnostic method as claimed in claim 7, it is characterised in that in step S303, using formula I=Imeas-
Vmeas/ (Ra+Rb) and V=Vmeas-I × Rres are modified to the I-V curve；Wherein, ImeasAnd VmeasIt is I- before amendment
The current value and magnitude of voltage of V curves, I and V is the current/voltage value of revised I-V curve, RresIt is current sampling resistor RsWith
Stray resistance between probe end.
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