CN204652766U - Based on the Langmuir probe diagnostic device of pulse modulation scanning power supply - Google Patents
Based on the Langmuir probe diagnostic device of pulse modulation scanning power supply Download PDFInfo
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- CN204652766U CN204652766U CN201520054372.2U CN201520054372U CN204652766U CN 204652766 U CN204652766 U CN 204652766U CN 201520054372 U CN201520054372 U CN 201520054372U CN 204652766 U CN204652766 U CN 204652766U
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- probe
- power supply
- diagnostic device
- pulse modulation
- scanning power
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Abstract
The utility model relates to a kind of Langmuir probe diagnostic device based on pulse modulation scanning power supply, this device can be used for the parameter such as density, space potential, electron temperature diagnosing plasma, it is characterized in that using pulse modulated probe bias voltage to replace traditional zigzag triangle wave voltage.The utility model is made up of probe, operational amplifier, data collecting card and PC.Utilize data collecting card to generate bias voltage by PC, be loaded on probe after being amplified to-50V ~+50V by operational amplifier, be linked into afterwards on plasma and can diagnose.
Description
Technical field
The utility model belongs to plasma diagnostic science and technology field, is specifically related to a kind of Langmuir probe diagnostic device based on pulse modulation scanning power supply.
Background technology
Langmuir probe is one of diagnostic mode of plasma properties, traditional Langmuir probe diagnostic method is the electrode that insertion one is minimum in plasma to be measured, then on probe, load the zigzag triangular wave generated by signal generator, by the electric current on mensuration probe and voltage, and being depicted as voltage-current characteristic curve, the particular point on recycling characteristic curve tries to achieve the parameters such as the density of plasma, space potential and electron temperature; The shortcoming of this method is: in one-period, and zigzag triangular wave acts on probe all the time, and when probe reaches electronics saturated flow, probe current is very large, causes probe to generate heat serious, certainly hinders increase, cause the plasma parameter of measurement inaccurate.
Summary of the invention
The technical problems to be solved in the utility model is the deficiency overcoming traditional Langmuir probe, pulse modulated probe bias voltage is used to replace traditional zigzag triangle wave voltage, construct a kind of Langmuir probe diagnostic device based on pulse modulation scanning power supply, a kind of diagnostic method of plasma properties more effectively is efficiently provided.
The utility model solves the technical scheme that its technical problem adopts: propose a kind of Langmuir probe diagnostic device based on pulse modulation scanning power supply.The described Langmuir probe diagnostic device based on pulse modulation scanning power supply comprises probe (1), operational amplifier (2), data collecting card (3) and PC (4).It is characterized in that using pulse modulated probe bias voltage to replace traditional zigzag triangle wave voltage, wherein pulse modulated probe bias voltage is made up of the signal of amplitude-modulated pulse contact potential series form, carries out sampling and analyzing calculating by means of PC (4) control data capture card production burst modulation probe bias voltage to the electric current of probe, voltage.
The beneficial effects of the utility model are, the Langmuir probe diagnostic device based on pulse modulation scanning power supply of structure, Langmuir Single probe can be solved when electronics saturated flow, the probe heating that probe current causes greatly impact that is serious, resistance increase article on plasma characteristic certainly.The plasma scope of this measurement device can adjust according to actual conditions.
Accompanying drawing explanation
Fig. 1 is principle schematic of the present utility model.
Fig. 2 is pulse modulation probe bias voltage principle schematic diagram of the present utility model.
Fig. 3 is voltage-to-current sampled point area schematic after the utility model pulse amplifying.
Embodiment
Embodiment of the present utility model is described in detail below in conjunction with Figure of description
PC in FIG, Labview program is that the Labview2009 researched and developed by NI company writes, data collecting card uses the USB-2085 series of products with modulating output developed by Beijing Altay company, operational amplifier uses 3538AM high-voltage power operational amplifier, probe with use in traditional Langmuir Single probe identical.
The voltage of pulse modulation probe bias is in fig. 2 by amplitude-modulated pulse Sequence composition, impulse magnitude is rendered as monotonically increasing trend, magnitude of voltage between each pulse is 0, and the time interval between each pulse is identical and size is adjustable, and pulse is one-period from-50V ~+50V; When pulse modulation probe bias voltage-drop loading is on probe, due to the effect in pulse spacing, the thermal effect of probe can be reduced, thus the probe heating problem because electronics saturated flow causes can be reduced, various plasma is diagnosed.
Require when current-voltage gathers in the embodiments of figure 3 that the voltage of collection and current point corresponding with it must be controlled in region 1, sampling routine is designed according to actual conditions by Labview.
Claims (1)
1., based on a Langmuir probe diagnostic device for pulse modulation scanning power supply, it is characterized in that using pulse modulated probe bias voltage to replace traditional zigzag triangle wave voltage; Its architectural feature is to be connected between PC (4) with data collecting card (3), data collecting card (3) is connected with operational amplifier (2), and operational amplifier (2) is connected with probe (1).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520054372.2U CN204652766U (en) | 2015-04-20 | 2015-04-20 | Based on the Langmuir probe diagnostic device of pulse modulation scanning power supply |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201520054372.2U CN204652766U (en) | 2015-04-20 | 2015-04-20 | Based on the Langmuir probe diagnostic device of pulse modulation scanning power supply |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN204652766U true CN204652766U (en) | 2015-09-16 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201520054372.2U Expired - Fee Related CN204652766U (en) | 2015-04-20 | 2015-04-20 | Based on the Langmuir probe diagnostic device of pulse modulation scanning power supply |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN204652766U (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105704900A (en) * | 2016-04-19 | 2016-06-22 | 陈兆权 | Positive and negative amplitude-modulation pulse driven electrostatic probe and data acquisition and analysis integrated device |
| CN106568805A (en) * | 2016-11-08 | 2017-04-19 | 华中科技大学 | Highly-integrated Langmuir probe diagnosis system and method |
| CN109975720A (en) * | 2017-12-25 | 2019-07-05 | 核工业西南物理研究院 | A method of for probe C-V characteristic simulation test |
-
2015
- 2015-04-20 CN CN201520054372.2U patent/CN204652766U/en not_active Expired - Fee Related
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN105704900A (en) * | 2016-04-19 | 2016-06-22 | 陈兆权 | Positive and negative amplitude-modulation pulse driven electrostatic probe and data acquisition and analysis integrated device |
| CN106568805A (en) * | 2016-11-08 | 2017-04-19 | 华中科技大学 | Highly-integrated Langmuir probe diagnosis system and method |
| CN106568805B (en) * | 2016-11-08 | 2018-01-05 | 华中科技大学 | A kind of high integration Langmuir probe diagnostic system and method |
| CN109975720A (en) * | 2017-12-25 | 2019-07-05 | 核工业西南物理研究院 | A method of for probe C-V characteristic simulation test |
| CN109975720B (en) * | 2017-12-25 | 2021-04-13 | 核工业西南物理研究院 | Method for simulating and testing volt-ampere characteristic of probe |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| C14 | Grant of patent or utility model | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20150916 Termination date: 20160420 |