CN106558476A - 一种制备氧化锌/硫化锌复合光电薄膜的方法 - Google Patents
一种制备氧化锌/硫化锌复合光电薄膜的方法 Download PDFInfo
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- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 title claims abstract description 69
- 239000011787 zinc oxide Substances 0.000 title claims abstract description 35
- 229910052984 zinc sulfide Inorganic materials 0.000 title claims abstract description 27
- 239000005083 Zinc sulfide Substances 0.000 title claims abstract description 20
- 239000002131 composite material Substances 0.000 title claims abstract description 20
- UCKMPCXJQFINFW-UHFFFAOYSA-N Sulphide Chemical compound [S-2] UCKMPCXJQFINFW-UHFFFAOYSA-N 0.000 title claims abstract description 17
- 238000000034 method Methods 0.000 title claims abstract description 15
- 239000000758 substrate Substances 0.000 claims abstract description 29
- 239000010408 film Substances 0.000 claims abstract description 23
- 239000002243 precursor Substances 0.000 claims abstract description 15
- 239000010409 thin film Substances 0.000 claims abstract description 14
- IKDUDTNKRLTJSI-UHFFFAOYSA-N hydrazine monohydrate Substances O.NN IKDUDTNKRLTJSI-UHFFFAOYSA-N 0.000 claims abstract description 11
- NWZSZGALRFJKBT-KNIFDHDWSA-N (2s)-2,6-diaminohexanoic acid;(2s)-2-hydroxybutanedioic acid Chemical compound OC(=O)[C@@H](O)CC(O)=O.NCCCC[C@H](N)C(O)=O NWZSZGALRFJKBT-KNIFDHDWSA-N 0.000 claims abstract description 10
- 239000002904 solvent Substances 0.000 claims abstract description 8
- 238000001035 drying Methods 0.000 claims abstract description 7
- 238000004528 spin coating Methods 0.000 claims abstract description 5
- 239000011521 glass Substances 0.000 claims description 9
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims description 9
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical group CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 claims description 8
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 7
- 239000010703 silicon Substances 0.000 claims description 7
- 229910052710 silicon Inorganic materials 0.000 claims description 7
- MHAJPDPJQMAIIY-UHFFFAOYSA-N Hydrogen peroxide Chemical compound OO MHAJPDPJQMAIIY-UHFFFAOYSA-N 0.000 claims description 6
- 239000012153 distilled water Substances 0.000 claims description 6
- 230000014759 maintenance of location Effects 0.000 claims description 4
- 238000004140 cleaning Methods 0.000 claims description 3
- 238000010438 heat treatment Methods 0.000 claims description 3
- 230000000873 masking effect Effects 0.000 claims description 3
- 230000010355 oscillation Effects 0.000 claims description 3
- 238000004519 manufacturing process Methods 0.000 abstract description 4
- 238000002360 preparation method Methods 0.000 abstract description 4
- 239000004065 semiconductor Substances 0.000 abstract description 4
- 239000000203 mixture Substances 0.000 abstract description 2
- OAKJQQAXSVQMHS-UHFFFAOYSA-N Hydrazine Chemical compound NN OAKJQQAXSVQMHS-UHFFFAOYSA-N 0.000 abstract 2
- 239000000463 material Substances 0.000 description 8
- 229910052950 sphalerite Inorganic materials 0.000 description 4
- 239000007788 liquid Substances 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000001699 photocatalysis Effects 0.000 description 3
- 238000011160 research Methods 0.000 description 3
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 230000005284 excitation Effects 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000012528 membrane Substances 0.000 description 2
- 239000002994 raw material Substances 0.000 description 2
- 238000001228 spectrum Methods 0.000 description 2
- UMGDCJDMYOKAJW-UHFFFAOYSA-N thiourea Chemical compound NC(N)=S UMGDCJDMYOKAJW-UHFFFAOYSA-N 0.000 description 2
- 208000033962 Fontaine progeroid syndrome Diseases 0.000 description 1
- XSQUKJJJFZCRTK-UHFFFAOYSA-N Urea Natural products NC(N)=O XSQUKJJJFZCRTK-UHFFFAOYSA-N 0.000 description 1
- 238000010521 absorption reaction Methods 0.000 description 1
- 230000004913 activation Effects 0.000 description 1
- 230000015572 biosynthetic process Effects 0.000 description 1
- 238000009388 chemical precipitation Methods 0.000 description 1
- 238000006243 chemical reaction Methods 0.000 description 1
- 239000003638 chemical reducing agent Substances 0.000 description 1
- 239000004567 concrete Substances 0.000 description 1
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- 238000000151 deposition Methods 0.000 description 1
- 238000001548 drop coating Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000002290 gas chromatography-mass spectrometry Methods 0.000 description 1
- 239000007792 gaseous phase Substances 0.000 description 1
- 238000001027 hydrothermal synthesis Methods 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 238000000593 microemulsion method Methods 0.000 description 1
- 239000012768 molten material Substances 0.000 description 1
- 238000010422 painting Methods 0.000 description 1
- 238000007146 photocatalysis Methods 0.000 description 1
- 239000011941 photocatalyst Substances 0.000 description 1
- 230000005622 photoelectricity Effects 0.000 description 1
- 238000001556 precipitation Methods 0.000 description 1
- 230000006798 recombination Effects 0.000 description 1
- 238000005215 recombination Methods 0.000 description 1
- 239000005361 soda-lime glass Substances 0.000 description 1
- 238000003980 solgel method Methods 0.000 description 1
- 238000003786 synthesis reaction Methods 0.000 description 1
- 230000002194 synthesizing effect Effects 0.000 description 1
- 230000000007 visual effect Effects 0.000 description 1
- DRDVZXDWVBGGMH-UHFFFAOYSA-N zinc;sulfide Chemical compound [S-2].[Zn+2] DRDVZXDWVBGGMH-UHFFFAOYSA-N 0.000 description 1
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- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02365—Forming inorganic semiconducting materials on a substrate
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- H01L21/02521—Materials
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- H01L21/02557—Sulfides
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02612—Formation types
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- H01L21/02656—Special treatments
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- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
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Abstract
本发明涉及一种制备氧化锌/硫化锌复合光电薄膜的方法,属于半导体薄膜制备技术领域。本发明通过如下步骤得到:首先清洗基片,然后将氧化锌、CH4N2S放入溶剂中,采用旋涂法在基片上得到前驱体薄膜,烘干,放入有水合联氨的可密闭容器中,使前驱体薄膜样品不与联氨接触,最后进行干燥,得到氧化锌/硫化锌复合光电薄膜。本发明不需要高温高真空条件,对仪器设备要求低,生产成本低,生产效率高,易于操作,所得氧化锌/硫化锌复合光电薄膜有较好的连续性和均匀性。这种新工艺容易控制目标产物的成分和结构,为制备高性能的氧化锌/硫化锌复合光电薄膜提供了一种成本低、可实现工业化的制备方法。
Description
技术领域
本发明属于无机半导体薄膜制备技术领域,尤其涉及以氧化锌、硫脲为原料的一种制备氧化锌/硫化锌复合光电薄膜的方法。
背景技术
近年来,纳米结构ZnO和ZnS材料引起了人们的广泛关注,与其他材料相比,它们具有更好的热导电性、更强的力学韧性、更高的发光效率、更宽的发光频谱等优点。作为纳米体系之一的异质结构有序阵列体系成为了纳米材料领域研究的热点,特别是ZnO/ZnS复合异质结构,成了研究热点之一。
ZnO是宽禁带3.2eV的n型半导体材料,具有光电和光催化活性,在可见区有一定的吸收作用。ZnS也是一种宽禁带的半导体材料,其禁带宽度为3.7eV~3.8eV。作为光催化剂,ZnO和ZnS具有相同的缺陷,即在紫外区会发生光腐蚀,光稳定性差,导致光催化活性降低,并且具有较快的电子-空穴复合率。因此,对它们进行一定的修饰是人们十分关注的研究课题。已有研究表明,ZnO和ZnS的光激发阈值较高,光活性较低,但是当二者结合在一起时,会产生一种比它们的光激发阈值都低的材料,可使得光激发更加容易。因此,将ZnO和ZnS复合往往可以提高复合材料的光催化性能。
目前,合成纳米ZnO和ZnS的方法较多,主要有溶胶-凝胶法、微乳液法、气相沉淀法、水热法、化学沉淀法以及均匀沉淀法。这些方法或对实验仪器和合成条件要求比较苛刻,或合成产物形貌较难控制,尺寸不一。
发明内容
本发明为解决现有技术的不足,而发明了一种不同与现有的制备技术。
本发明采用旋涂还原法合成氧化锌/硫化锌复合薄膜材料,采用钠钙玻璃片或硅片为基片,以氧化锌和CH4N2S为原料,去乙醇为溶剂,先旋涂制备一定厚度的前驱体薄膜,以水合联氨为还原剂,在密闭反应釜内低温加热,使前驱体薄膜还原并发生合成反应得到目标产物。
本发明的具体制备方法包括如下顺序的步骤:
a.玻璃基片或硅基片的清洗:将大小为3mm×3mm玻璃基片或硅基片,先放入体积比HCl:蒸馏水=1:55的溶液中加热煮沸35min;再将基片放入体积比双氧水:HCl=1:2的溶液中,水浴加热95℃保温40min;再在蒸馏水中将基片用超声波振荡;将上述得到的基片排放在玻璃皿中送入烘箱中烘干供制膜用;
b.将将氧化锌和CH4N2S放入溶剂中,使溶液中的物质均匀混合。具体地说,可以将2.36~4.13份氧化锌、2.5~5.0份CH4N2S放入90~150份的溶剂中,使溶液中的物质均匀混合,其中溶剂为乙醇;
c.制作外部均匀涂抹步骤b所述溶液的基片,并烘干,得到前驱体薄膜样品,具体的说,可以将上述溶液滴到放置在匀胶机上的基片上,再启动匀胶机以500~2500转/分旋转一定时间,使滴上的溶液涂布均匀后,并对基片进行烘干后,再次重复滴上前述溶液和旋涂后再烘干,如此重复5~10次,于是在基片上得到了一定厚度的前驱体薄膜样品;
d.将步骤c所得前驱体薄膜样品置于支架上,放入有水合联氨的可密闭容器,使前驱体薄膜样品不与水合联氨接触,水合联氨放入量为85.0~95.0份。将上述装有前躯体薄膜样品的密闭容器放入烘箱中,加热至250℃~320℃之间,保温时间25~35小时,然后冷却到室温取出;
e.将步骤d所得产物,进行自然干燥,得到氧化锌/硫化锌复合光电薄膜;
本发明不需要高温高真空条件,对仪器设备要求低,生产成本低,生产效率高,易于操作。所得氧化锌/硫化锌复合光电薄膜有较好的连续性和均匀性,这种新工艺容易控制目标产物的成分和结构,为制备高性能氧化锌/硫化锌复合光电薄膜提供了一种低成本、可实现大规模的工业化生产的方法。
附图说明
图1是加热270℃保温时间为25h,所得氧化锌/硫化锌复合光电薄膜的XRD图谱,结果表明所得硫化锌沿(111)、(220)、(311)晶面生长;氧化锌沿(100)、(002)、(101)晶面生长。
具体实施方式
下面通过实施例对本发明的内容进一步说明,本发明的保护范围不限于下述的实施例。
实施例1
a.玻璃基片或硅基片的清洗:将大小为3mm×3mm玻璃基片或硅基片,先放入体积比HCl:蒸馏水=1:55的溶液中加热煮沸35min;再将基片放入体积比双氧水:HCl=1:2的溶液中,水浴加热95℃保温40min;再在蒸馏水中将基片用超声波振荡;将上述得到的基片排放在玻璃皿中送入烘箱中烘干供制膜用;
b.将将氧化锌和CH4N2S放入溶剂中,使溶液中的物质均匀混合。具体地说,可以将2.36份氧化锌、2.5份CH4N2S放入玻璃瓶中,加100份乙醇,利用超声波振动30min以上,使溶液中的物质均匀混合。
c.制作外部均匀涂抹步骤b所述溶液的基片,并烘干,得到前驱体薄膜样品,具体的说,可以将上述溶液滴到放置在匀胶机上的基片上,再启动匀胶机以匀胶机以500转/分转动6秒,以2500转/分旋转20秒,使滴上的溶液涂布均匀后,并对基片进行烘干后,再次重复滴上前述溶液和旋涂后再烘干,如此重复9次,于是在基片上得到了一定厚度的前驱体薄膜样品;
d.将步骤c所得前驱体薄膜样品置于支架上,放入有水合联氨的可密闭容器,使前驱体薄膜样品不与水合联氨接触,水合联氨放入量为90份。将上述装有前躯体薄膜样品的密闭容器放入烘箱中,加热至270℃,保温时间25小时,然后冷却到室温取出;
e.将步骤d所得产物,进行自然干燥,得到氧化锌/硫化锌复合光电薄膜;
以上所述是本发明的优选实施方式,应当指出,对于本技术领域的普通技术人员来说,在不脱离本发明原理的前提下,还可以做出若干改进和润饰,这些改进和润饰也视为本发明的保护范围。
Claims (5)
1.一种制备氧化锌/硫化锌复合光电薄膜的方法,包括如下顺序的步骤:
a.玻璃基片或硅基片的清洗;
b.将2.36~4.13份氧化锌、2.5~5.0份CH4N2S放入90~150份的溶剂中,使溶液中的物质均匀混合;
c.制作外部均匀涂抹步骤b所述溶液的基片,并烘干,得到前驱体薄膜样品;
d.将步骤c所得前驱体薄膜样品置于支架上,放入有水合联氨的可密闭容器,使前驱体薄膜样品不与水合联氨接触,将装有前躯体薄膜样品的密闭容器放入烘箱中,加热至250℃~320℃之间,保温时间25~35小时,然后冷却到室温取出;
e.将步骤d所得产物,进行自然干燥,得到氧化锌/硫化锌复合光电薄膜。
2.如权利要求1所述的一种制备氧化锌/硫化锌复合光电薄膜的方法,其特征在于,步骤a所述清洗,是将大小为3mm×3mm玻璃基片或硅基片,先放入体积比HCl:蒸馏水=1:55的溶液中加热煮沸35min;再将基片放入体积比双氧水:HCl=1:2的溶液中,水浴加热95℃保温40min;再在蒸馏水中将基片用超声波振荡;将上述得到的基片排放在玻璃皿中送入烘箱中烘干供制膜用。
3.如权利要求1所述的一种制备氧化锌/硫化锌复合光电薄膜的方法,其特征在于,步骤b所述溶剂为乙醇。
4.如权利要求1所述的一种制备氧化锌/硫化锌复合光电薄膜的方法,其特征在于,步骤c所述外部均匀涂抹步骤b所述溶液的基片,是通过匀胶机旋涂,匀胶机以500~2500转/分旋转,然后对基片进行烘干后,再次如此重复5~10次,得到了一定厚度的前驱体薄膜样品。
5.如权利要求1所述的一种制备氧化锌/硫化锌复合光电薄膜的方法,其特征在于,步骤d所述密闭容器内放入85.0~95.0份水合联氨。
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CN113299866A (zh) * | 2021-05-24 | 2021-08-24 | 合肥福纳科技有限公司 | 膜层及其制备方法和发光器件及其制备方法 |
CN113481546A (zh) * | 2021-08-13 | 2021-10-08 | 辽宁大学 | 一种氧化锌/硫化锌复合薄膜光电极及太阳能光致沉积贵金属的回收装置 |
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CN105097989A (zh) * | 2014-06-13 | 2015-11-25 | 山东建筑大学 | 一种制备硫化锌光电薄膜的方法 |
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CN105097989A (zh) * | 2014-06-13 | 2015-11-25 | 山东建筑大学 | 一种制备硫化锌光电薄膜的方法 |
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CN113299866A (zh) * | 2021-05-24 | 2021-08-24 | 合肥福纳科技有限公司 | 膜层及其制备方法和发光器件及其制备方法 |
CN113481546A (zh) * | 2021-08-13 | 2021-10-08 | 辽宁大学 | 一种氧化锌/硫化锌复合薄膜光电极及太阳能光致沉积贵金属的回收装置 |
CN113481546B (zh) * | 2021-08-13 | 2024-03-22 | 辽宁大学 | 一种氧化锌/硫化锌复合薄膜光电极及太阳能光致沉积贵金属的回收装置 |
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