CN106549036B - A kind of improved technotron - Google Patents
A kind of improved technotron Download PDFInfo
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- CN106549036B CN106549036B CN201611051259.4A CN201611051259A CN106549036B CN 106549036 B CN106549036 B CN 106549036B CN 201611051259 A CN201611051259 A CN 201611051259A CN 106549036 B CN106549036 B CN 106549036B
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- region
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- type injection
- injection region
- drain region
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- 238000002347 injection Methods 0.000 claims abstract description 64
- 239000007924 injection Substances 0.000 claims abstract description 64
- 210000002615 epidermis Anatomy 0.000 claims abstract description 27
- 238000002955 isolation Methods 0.000 claims abstract description 21
- 239000000758 substrate Substances 0.000 claims abstract description 10
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims description 17
- 229920005591 polysilicon Polymers 0.000 claims description 17
- 230000005611 electricity Effects 0.000 claims description 2
- 230000005669 field effect Effects 0.000 abstract description 2
- 239000010410 layer Substances 0.000 description 15
- 239000004065 semiconductor Substances 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 238000005516 engineering process Methods 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 2
- 230000002708 enhancing effect Effects 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000002787 reinforcement Effects 0.000 description 1
- 230000003014 reinforcing effect Effects 0.000 description 1
- 239000000377 silicon dioxide Substances 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
- H01L29/0603—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions
- H01L29/0607—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration
- H01L29/0611—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices
- H01L29/0615—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions characterised by particular constructional design considerations, e.g. for preventing surface leakage, for controlling electric field concentration or for internal isolations regions for preventing surface leakage or controlling electric field concentration for increasing or controlling the breakdown voltage of reverse biased devices by the doping profile or the shape or the arrangement of the PN junction, or with supplementary regions, e.g. junction termination extension [JTE]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
- H01L29/808—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a PN junction gate, e.g. PN homojunction gate
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- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
The present invention, which relates to, discloses a kind of improved technotron, P type substrate；N-type injection region；P-type injection region；P-type heavily doped region；The drain region of N-type heavy doping and source region；The first dielectric isolation layer between the drain region and the p-type injection region；The second dielectric isolation layer between the source region and the p-type injection region, P-doped zone is formed in N-type injection region upper epidermis under first dielectric isolation layer, N-doped zone is formed in the P-doped zone upper epidermis, the N-type injection region is connected with the PN junction that P-doped zone is constituted with P-doped zone with the PN junction that N-doped zone is constituted, and forms the first closed type JFET structure.Junction field effect transistor pressure resistance performance of the invention effectively improves.
Description
Technical field
The present invention relates to technical field of semiconductors, in particular to a kind of technotron.
Technical background
With the quick evolution of semiconductor technologies, so that also increasingly being updated such as computer and its periphery digital product.
Can the application integrated circuit semiconductor technology of computer and its periphery digital product be fast-developing, to provide high-quality digital product
An important factor for.
Technotron (JFET) is one of most common semiconductor devices, including N-channel technotron and P ditch
Road technotron, in practical application, the most commonly used is N-channel JFET.Technotron has since device size is small
The advantages of better than MOSFET, the direction for facilitating semiconductor devices further towards high density, miniaturization are developed.
Traditional technotron is by PN junction pressure resistance, and the mode for improving pressure resistance relies primarily on the concentration for reducing knot,
But under current processing procedure, pressure-resistant degree is still limited, can not be made into high voltage bearing technotron, and reduce the concentration of knot
Easily cause the problems such as device current is too small, stability is poor.
Summary of the invention
The object of the present invention is to provide a kind of improved technotron, pressure-resistant performance effectively improves.
To achieve the above object, the invention adopts the following technical scheme:
A kind of improved technotron, comprising: P type substrate, the P type substrate is as backgate；In the P type substrate
Upper epidermis in formed N-type injection region；The p-type injection region formed in the upper epidermis of the N-type injection region, the p-type injection
Area is as positive grid；The p-type heavily doped region formed in the upper epidermis of the p-type injection region；The upper epidermis in the N-type injection region
The drain region for the N-type heavy doping that both ends are formed and source region, positive grid are close to the source region；Between the drain region and the p-type injection region
N-type injection region on the first dielectric isolation layer for being formed；Shape on N-type injection region between the source region and the p-type injection region
At the second dielectric isolation layer, form P-doped zone, the P in the N-type injection region upper epidermis under first dielectric isolation layer
Form N-doped zone in type doped region upper epidermis, PN junction that the N-type injection region and P-doped zone are constituted and P-doped zone with
The PN junction that N-doped zone is constituted is connected, and forms the first closed type JFET structure；The N-doped zone is electrical connected with drain region, institute
It states the first closed type JFET structure number and is greater than 1, the P-doped zone and the two P of two neighboring first closed type JFET structure
The PN junction that N-type injection region between type doped region respectively constitutes is connected, and forms the second closed type JFET structure, part described first
The first polysilicon field plate is formed on the dielectric isolation layer and part p-type injection region that is attached thereto；First polysilicon field
Plate is contacted with p-type heavily doped region；The drain region includes the first drain region and the second drain region, and the second drain region is formed on N-type injection region
The one end on surface layer, the first drain region are formed in the second drain region upper epidermis, and the second drain region doping concentration is greater than N-type injection region and is less than
First drain region；The second polysilicon field is formed on first dielectric isolation layer of part and the second drain region of part for being attached thereto
Plate, second polysilicon field plate and the first drain contact, N-doped zone pass through the second polysilicon field plate and drain region electrical property phase
Even.
Compared with the existing technology, the invention has the following advantages:
P-doped zone, N are formed in N-type injection region upper epidermis under the first dielectric isolation layer of technotron of the present invention
Type injection region constitutes PN junction with P-doped zone and exhausts, and enhances the resistivity to drain region high voltage；Table in the P-doped zone
N-doped zone is formed in layer, P-doped zone and N-doped zone constitute PN junction, further to the resistivity of drain region high voltage；
The N-type injection region is connected with the PN junction that P-doped zone is constituted with P-doped zone with the PN junction that N-doped zone is constituted, and forms the
One closed type JFET structure, enhancing exhaust, and further enhance the pressure-resistant performance of the drain region injection region CeNXing upper epidermis, therefore,
Junction field effect transistor pressure resistance performance of the present invention effectively improves.
Detailed description of the invention
Fig. 1 is first embodiment of the invention technotron the schematic diagram of the section structure；
Fig. 2 is second embodiment of the invention technotron the schematic diagram of the section structure；
Fig. 3 is third embodiment of the invention technotron the schematic diagram of the section structure；
Fig. 4 is fourth embodiment of the invention technotron the schematic diagram of the section structure.
Specific embodiment
For a better understanding of the present invention, with reference to the accompanying drawing and embodiment the invention will be described further, implement
Example is only limitted to explain the present invention, does not constitute any restriction to the present invention.
First embodiment
As shown in Figure 1, the improved technotron of the present embodiment, comprising: P type substrate 100, the P type substrate 100
As backgate；N-type injection region 200 is formed in the upper epidermis of the P type substrate 100；Upper table in the N-type injection region 200
The p-type injection region 300 formed in layer, the p-type injection region 300 are used as positive grid；In the upper epidermis of the p-type injection region 300
The p-type heavily doped region 310 of formation；In 210 He of drain region for the N-type heavy doping that the both ends of 200 upper epidermis of N-type injection region are formed
Source region 220, positive grid are close to the source region 220；On N-type injection region 200 between the drain region 210 and the p-type injection region 300
The first dielectric isolation layer 410 formed；It is formed on N-type injection region 200 between the source region 220 and the p-type injection region 300
The second dielectric isolation layer 420, the first dielectric isolation layer 410 and 420 material of the second dielectric isolation layer described in the present embodiment can
For silica.
P-doped zone 500, N-type are formed in 200 upper epidermis of N-type injection region under the first dielectric isolation layer of the present embodiment 410
Injection region 200 constitutes PN junction with P-doped zone 500 and exhausts, and enhances the resistivity to 210 high voltage of drain region；The p-type doping
N-doped zone 600 is formed in 500 upper epidermis of area, P-doped zone 500 and N-doped zone 600 constitute PN junction, further enhance pair
The resistivity of 210 high voltage of drain region；The PN junction and P-doped zone that the N-type injection region 200 is constituted with P-doped zone 500
500 PN junctions constituted with N-doped zone 600 are connected, and form the first closed type JFET structure, and enhancing exhausts, and further enhance
The pressure-resistant performance of 210 side N-type injection region of drain region, 200 upper epidermis.
Second embodiment
As shown in Fig. 2, the present embodiment, on the basis of first embodiment, the N-doped zone 600 and drain region 210 are electrical
It is connected, when technotron works normally, drain region 210 plus positive high voltage, N-doped zone 600 are electrical connected with drain region 210
So that N-doped zone 600 and the PN junction that P-doped zone 500 is formed are reverse-biased, reinforce exhausting, 210 strong voltage of drain region is supported in reinforcement
Anti- ability.
3rd embodiment
As shown in figure 3, relative to first embodiment, between drain region 210 described in the present embodiment and the p-type injection region 300
Three the first closed type JFET structures are formed, the p-type doping of two neighboring first closed type JFET structure in the present embodiment
The PN junction that N-type injection region 200 between area 500 and the two P-doped zones 500 respectively constitutes is connected, and forms the second closed type
When JFET structure, the surface layer for reinforcing N-type injection region 200 exhausts, and reinforces 200 surface layer anti-pressure ability of N-type injection region.Fourth embodiment
As shown in figure 4, relative to first embodiment, on the first dielectric isolation layer 410 described in the present embodiment part and with
Connected part p-type injection region 300 on form the first polysilicon field plate 710, the setting of the first polysilicon field plate 710 is so that grid
The distribution in p-type injection region 300 more evenly of pole charge more evenly, grid field distribution more evenly, increase anti-pressure ability, and described the
One polysilicon field plate 710 is contacted with p-type heavily doped region 310, strengthens the uniformity of gate charge and field distribution；This implementation
The example drain region 210 includes the first drain region 211 and the second drain region 212, and the second drain region 212 is formed in 210 upper epidermis of N-type injection region
One end, the first drain region 211 is formed in 212 upper epidermis of the second drain region, and 212 doping concentration of the second drain region is greater than N-type injection region
200 and less than the first drain region 211,211 doping concentration of the first drain region is big, forms Ohmic contact, the second drain region 212 with drain metal
Doping concentration is greater than N-type injection region 200 and less than the first drain region 211, drain region charge is uniformly spread, with the first polysilicon field plate
710 principles are similar, form on first dielectric isolation layer 410 of part and the second drain region of part 212 for being attached thereto
Two polysilicon field plates 720, second polysilicon field plate 720 are contacted with the first drain region 211, so that 210 charge of drain region and electricity
Field distribution more evenly, increases anti-pressure ability, and the present embodiment N-doped zone 600 passes through the second polysilicon field plate 720 and drain region 210
It is electrical connected, it is similar with second embodiment, increase exhausting to N-doped zone 600, reinforces the resistance to 210 strong voltage of drain region
Ability.
Claims (1)
1. a kind of improved technotron, comprising: P type substrate, the P type substrate is as backgate；In the P type substrate
N-type injection region is formed in upper epidermis；The p-type injection region formed in the upper epidermis of the N-type injection region, the p-type injection region
As positive grid；The p-type heavily doped region formed in the upper epidermis of the p-type injection region；The two of upper epidermis in the N-type injection region
Drain region and the source region of the N-type heavy doping formed are held, positive grid are close to the source region；N between the drain region and the p-type injection region
The first dielectric isolation layer formed on type injection region；It is formed on N-type injection region between the source region and the p-type injection region
Second dielectric isolation layer, it is characterised in that: p-type doping is formed in the N-type injection region upper epidermis under first dielectric isolation layer
Area forms N-doped zone in the P-doped zone upper epidermis, the PN junction and p-type that the N-type injection region and P-doped zone are constituted
Doped region is connected with the PN junction that N-doped zone is constituted, and forms the first closed type JFET structure；The N-doped zone and drain region electricity
Property be connected, the first closed type JFET structure number be greater than 1, the P-doped zone of two neighboring first closed type JFET structure
The PN junction that N-type injection region between the two P-doped zones respectively constitutes is connected, and forms the second closed type JFET structure, portion
Form the first polysilicon field plate on point first dielectric isolation layer and part p-type injection region that is attached thereto, described the
One polysilicon field plate is contacted with p-type heavily doped region, and the drain region includes the first drain region and the second drain region, and the second drain region is formed in N
One end of type injection region upper epidermis, the first drain region are formed in the second drain region upper epidermis, and the second drain region doping concentration is infused greater than N-type
Enter area and less than the first drain region, forms on first dielectric isolation layer of part and the second drain region of part for being attached thereto
Two polysilicon field plates, second polysilicon field plate and the first drain contact, N-doped zone pass through the second polysilicon field plate and leakage
Area is electrical connected.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611051259.4A CN106549036B (en) | 2016-11-25 | 2016-11-25 | A kind of improved technotron |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611051259.4A CN106549036B (en) | 2016-11-25 | 2016-11-25 | A kind of improved technotron |
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| Publication Number | Publication Date |
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| CN106549036A CN106549036A (en) | 2017-03-29 |
| CN106549036B true CN106549036B (en) | 2019-11-29 |
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Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101752421A (en) * | 2008-12-04 | 2010-06-23 | 东部高科股份有限公司 | Semiconductor device and method for manufacturing the same |
| CN102610656A (en) * | 2011-01-19 | 2012-07-25 | 上海华虹Nec电子有限公司 | High-voltage-resistance junction field effect transistor |
| CN103681876A (en) * | 2012-09-11 | 2014-03-26 | 旺宏电子股份有限公司 | High voltage junction field effect transistor |
Family Cites Families (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US8994118B2 (en) * | 2013-04-04 | 2015-03-31 | Monolith Semiconductor, Inc. | Semiconductor devices comprising getter layers and methods of making and using the same |
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- 2016-11-25 CN CN201611051259.4A patent/CN106549036B/en active Active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN101752421A (en) * | 2008-12-04 | 2010-06-23 | 东部高科股份有限公司 | Semiconductor device and method for manufacturing the same |
| CN102610656A (en) * | 2011-01-19 | 2012-07-25 | 上海华虹Nec电子有限公司 | High-voltage-resistance junction field effect transistor |
| CN103681876A (en) * | 2012-09-11 | 2014-03-26 | 旺宏电子股份有限公司 | High voltage junction field effect transistor |
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| Publication number | Publication date |
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| CN106549036A (en) | 2017-03-29 |
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Effective date of registration: 20191107 Address after: 317500 no.147-149, Daxi North Road, Xiacun village, Daxi Town, Wenling City, Taizhou City, Zhejiang Province Applicant after: Wenling tengke Electronics Co., Ltd Address before: Room 1303, Building B, Kangxin Garden, 569 Wensan Road, Xihu District, Hangzhou City, Zhejiang 310000 Applicant before: Hangzhou Yizheng Technology Co., Ltd. |
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