CN106537315A

CN106537315A - Capacitive sensor, capacitive sensing device, and electronic device

Info

Publication number: CN106537315A
Application number: CN201680000687.6A
Authority: CN
Inventors: 李问杰
Original assignee: Shenzhen Sunwave Technology Co Ltd
Current assignee: Liuzhou Zibo Technology Co.,Ltd.
Priority date: 2016-08-09
Filing date: 2016-08-09
Publication date: 2017-03-22
Anticipated expiration: 2036-08-09
Also published as: WO2018027597A1; CN106537315B

Abstract

The present invention provides a capacitive sensor, a capacitive sensing device, and an electronic device. The capacitive sensor includes an insulating substrate, a plurality of sensing units and a passivation layer. The insulating substrate includes a first surface and a second surface disposed opposite to the first surface. The plurality of sensing units are formed on a second surface of the insulating substrate. Each of the sensing units comprises: a sensing electrode formed on the second surface of the insulating substrate; a first insulating layer formed on the sensing electrode, the first insulating layer being provided with a through hole leading to the sensing electrode; and a sensing circuit formed on the first insulating layer and connected to the sensing electrode through the through hole. The passivation layer is formed on the sensing circuit. The capacitive sensing device comprises the capacitive sensor. The electronic device comprises the capacitive sensor.

Description

Capacitance type sensor, capacitance-type sensing device and electronic equipment

Technical field

The present invention relates to field of sensing technologies, more particularly to a kind of capacitance type sensor, capacitance-type sensing device, Yi Ji electricity Sub- equipment.

Background technology

With the development of society, increasing electronic equipment is (such as：Mobile phone, panel computer, Wearable, Yi Jizhi The various intelligent artifacts such as energy household) typically one or more sensor can be all set.The sensor includes touching as sensed user Touch touch sensor, biometric information sensor of sensing biological information of human body of operation etc..At present, touch sensor, biology Information sensor etc. performs sensing operation more using capacitance type sensor.

By taking biometric information sensor as an example, generally, the biometric information sensor generally includes a substrate, arranges the base Sensing circuit, the sensing electrode being arranged on the sensing circuit, the passivation layer being arranged in the sensing electrode on plate, with And the cover sheet that is attached to outside passivation layer or coat (Coating layers).

As the cover sheet or coat (Coating layers) have passivation layer and sensing electrode between, cause institute The sensing precision for stating capacitance type sensor is relatively low, further, since needing to arrange cover sheet or coat (Coating Layer), also cause the manufacturing cost of the capacitance type sensor higher.

The content of the invention

It is contemplated that at least solving one of technical problem present in prior art.For this purpose, the present invention needs offer one Plant capacitance type sensor, capacitance-type sensing device and electronic equipment.

The present invention provides a kind of capacitance type sensor, including：

Insulated substrate, including first surface and the second surface being oppositely arranged with the first surface；

Multiple sensing units, are formed on the second surface of the insulated substrate, and each sensing unit includes：

Sensing electrode, is formed on the second surface of the insulated substrate；

First insulating barrier, is formed in the sensing electrode, is provided through to sensing electrode on first insulating barrier Through hole；With

Sensing circuit, is formed on first insulating barrier, and is connected with the sensing electrode by the through hole；With

Passivation layer, is formed on the sensing circuit.

Alternatively, the first surface is used for the touch for receiving target object or is close to input, and the sensing electrode is with electricity Capacitance type is coupled to target object.

Alternatively, the first surface compared with second surface closer to target object.

Alternatively, the sensing electrode is formed directly on the insulated substrate.

Alternatively, the sensing electrode partly or entirely covers the sensing circuit.

Alternatively, the sensing circuit includes the first controlling switch, is connected with the sensing electrode, and first control is opened Close for controlling whether that transmitting pumping signal performs sensing operation to sensing electrode.

Alternatively, the sensing circuit further includes the second controlling switch, is connected with the sensing electrode, described second Controlling switch is used to control whether to transmit one first reference signal to sensing electrode, for same sensing unit, first control System switch and the second controlling switch alternate conduction.

Alternatively, first controlling switch and second controlling switch are thin film transistor switch.

Alternatively, the insulated substrate is glass substrate, and the sensing circuit is to be formed in by thin film transistor (TFT) technique On the glass substrate.

Alternatively, fingerprint sensor of the capacitance type sensor for self-capacitance.

Alternatively, the capacitance type sensor further includes scan drive circuit, is formed in the of the insulated substrate On two surfaces, and it is connected with the second controlling switch respectively with the first controlling switch in each sensing unit, for driving each sensing The first controlling switch in unit is turned on the second controlling switch timesharing；

For same row sensing unit：When the sensing electrode of a sensing unit is received by the first controlling switch for turning on During pumping signal, correspondence performs sensing operation, and the sensing electrode in remaining sensing unit is connect by the second controlling switch for turning on Receive first reference signal.

Alternatively, the plurality of sensing unit is arranged in array, when the scan drive circuit drives a line sensing single While the first controlling switch conducting in unit, the second controlling switch are ended, the first control in remaining row sensing unit is driven Switch cut-off, the conducting of the second controlling switch.

Alternatively, the scan drive circuit drives sensing unit to perform sensing operation by row.

Alternatively, the capacitance type sensor further includes data selection circuit, is formed in the of the insulated substrate On two surfaces, the data selection circuit is connected with each sensing unit, for select be the output pumping signal or One second reference signal gives corresponding sensing electrode.

Alternatively, the data selection circuit includes multiple data selectors, and each data selector connection at least two is arranged Sensing unit, the data selector are used for timesharing output drive signal to each row sensing unit being connected, and when by leading When the first logical controlling switch exports the pumping signal to wherein string sensing unit, entered by the first controlling switch for turning on One step exports the sensing unit that second reference signal is connected to remaining several row.

Alternatively, the data selector enters one while output drive signal performs sensing operation to sensing electrode Step is exported to the sensing signal from the sensing electrode.

Alternatively, the capacitance type sensor further includes multiple scan line groups and multiple data wire groups, equal shape Into in the second surface side of the insulated substrate；Wherein, the plurality of scan line group is connected with the scan drive circuit, Further connect a line sensing unit per scan line group；The plurality of data wire group is connected with the data selection circuit Connect, each data wire group further connects string sensing unit；Include that the first scan line and second is swept per scan line group Line is retouched, first scan line connects the first controlling switch of a line sensing unit, and second scan line is used to connect same Second controlling switch of row sensing unit；Each data wire group includes the first data wire and the second data wire, first number Connect the first controlling switch of string sensing unit, the second control of the second data wire connection same row sensing unit according to line Switch.

Alternatively, first scan line and the second scan line of the plurality of scan line group extends along line direction, and along row Direction arranges；First data wire and the second data wire of the plurality of data wire group extends along column direction, and arranges along line direction Row.

Alternatively, in the scan drive circuit drives a line sensing unit the first controlling switch conducting, the second control During system switch cut-off, by the first data wire and the first controlling switch of conducting, the plurality of data selector is every time while defeated Go out the pumping signal to a sensing electrode, and second reference signal is exported to remaining sensing electrode.

Alternatively, the capacitance type sensor further includes the first reference signal line and the second reference signal line, equal shape Into in the second surface side of the insulated substrate, wherein, second in first reference signal line and each data wire group Data wire connects, and second reference signal line is connected with the plurality of data selector, first reference signal line and institute State the second reference signal to be respectively used to transmit first reference signal and second reference signal；For with same data select Select at least two row sensing units that device is connected：Wherein string sensing list is given when the data selector transmits the pumping signal During the sensing electrode of unit, sensing electricity of second reference signal on the second reference signal line to other row sensing units is transmitted Pole；For same row sensing unit：When the sensing electrode of a wherein sensing unit receives the pumping signal, remaining sensing The sensing electrode of unit receives first reference signal on first reference signal line.

Alternatively, first reference signal is identical with second reference signal.

Alternatively, first reference signal is identical with the pumping signal.

The present invention also provides a kind of capacitance-type sensing device, and the capacitance-type sensing device includes capacitance type sensor and control Coremaking piece, carries out signal transmission between the control chip and the capacitance type sensor, wherein, the capacitance type sensor is Capacitive sensing sensor described in above-mentioned middle any one, the control chip are bundled in the second surface of the insulated substrate On, or, the control chip is arranged on a flexible circuit board, the second table of the flexible circuit board and the insulated substrate Face connects, and electrically connects with the plurality of sensing unit.

Alternatively, the control chip includes generating circuit from reference voltage and sensing drive circuit, and the reference signal is produced Raw circuit is used to provide the first reference signal or/and the second reference signal to the sensing electrode, and the sensing drive circuit is used In pumping signal is provided to the sensing electrode, sensing electrode is driven to perform sensing operation.

Alternatively, when the control chip is connected with the capacitance type sensor by flexible circuit board, the electric capacity Formula sensing device further includes reinforcing plate, and the reinforcing plate is attached to the passivation layer and the flexible circuit by bonding piece On plate.

The present invention also provides a kind of electronic equipment, including the capacitance-type sensing device described in above-mentioned middle any one.

As the sensing electrode of capacitance type sensor of the present invention is formed between insulated substrate and sensing circuit, so as to can Save one cover sheet of extra attaching or form coat (Coating layers), therefore, the manufacturing cost of the capacitance type sensor It is relatively low, and the sensing precision of the capacitance type sensor is of a relatively high.Correspondingly, the capacitance-type sensing device and the electronics The manufacturing cost of equipment is relatively low, and it is higher to sense precision.

Description of the drawings

Fig. 1 is the electrical block diagram of one embodiment of bio information sensing device of the present invention.

Top views of the Fig. 2 for the part-structure of bio information sensing device shown in Fig. 1.

Fig. 3 illustrates for the circuit structure of an embodiment of the data selection circuit of bio information sensing device shown in Fig. 1 Figure.

Fig. 4 is the structural representation of another embodiment of bio information sensing device of the present invention.

Cut-away section structural representations of the Fig. 5 for bio information sensing device shown in Fig. 4.

Use state figures of the Fig. 6 for bio information sensing device shown in Fig. 4.

Manufacture method flow charts of the Fig. 7 for an embodiment of biometric information sensor shown in Fig. 3.

Fig. 8 is the method flow diagram for making the first controlling switch and the second controlling switch.

Fig. 9 is the part-structure schematic diagram of the another embodiment of bio information sensing device of the present invention.

Figure 10 is the top view of another embodiment of the sensing unit of bio information sensing device of the present invention.

Figure 11 is the part-structure schematic diagram of the another embodiment of bio information sensing device of the present invention.

Figure 12 is the structural representation of an embodiment of electronic equipment of the present invention.

Circuit structure block diagrams of the Figure 13 for an embodiment of electronic equipment shown in Figure 12.

Specific embodiment

It is understandable to enable the above objects, features and advantages of the present invention to become apparent from, below in conjunction with the accompanying drawings to the present invention Specific embodiment be described in detail.However, example embodiment can be implemented in a variety of forms, and it is understood not to limit In embodiment set forth herein；Conversely, thesing embodiments are provided so that the present invention fully and completely, and example will be implemented The design of mode comprehensively conveys to those skilled in the art.It is for convenience or clear, may exaggerate, omit or schematically show The thickness and size that go out shown in the accompanying drawings per layer and the quantity for schematically illustrating related elements.In addition, the size of element Not exclusively reflection actual size, and the quantity of related elements not exclusively reflects actual quantity.Because accompanying drawing is of different sizes to wait former Cause, in different drawings the quantity of shown same or similar or related elements there is not consistent situation.The phase in figure Same reference represents same or similar structure.So, it should be noted that in order that label has regular and patrols Property etc. is collected, in some different embodiments, same or similar element or structure employ different references, according to technology Relatedness and related text explanation, those skilled in the art is directly or indirectly can to judge to learn.

Additionally, described feature, structure can in any suitable manner with reference in one or more embodiments. In the following description, there is provided many details are fully understood to embodiments of the present invention so as to be given.However, ability Field technique personnel will be appreciated that does not have one or more in the specific detail, or using other structures, constituent element etc., Technical scheme can also be put into practice.In other cases, known features or operation are not shown in detail or describe to keep away Exempt from the fuzzy present invention.

Further, following term is exemplary, it is not intended that limited by any way.Read the application it Afterwards, it would be recognized by those skilled in the art that the statement of these terms is suitable for technology, method, physical component and system (no matter mesh It is front whether to know), it is inferred to or educible its extension including those skilled in the art after reading the application.

In describing the invention, it is to be understood that：" multiple " include two and two or more, and " a plurality of " includes two With more than two, except non-invention separately has clearly specific restriction." at least two row " including two row, three row, four row, five row etc. by Cumulative many various suitable situations.In addition, the word such as " first ", " second " for occurring in each element title and signal name is simultaneously Be not to limit the sequencing that element or signal occur, but name for convenience of element and signal, clearly distinguish each element with And each signal so that description is more succinct.

Need further exist for illustrate be：The capacitance type sensor that the present invention is provided is applied to biometric information sensor, especially Fingerprint sensor.So, the present invention is not limited to this, the sensor of the capacitance type sensor also applicable other suitable types, Such as touch sensor etc..The biometric information sensor is used for the predetermined bio information for sensing target object.The target object It is such as the finger of user, the alternatively other parts of user's body, such as palm, toe, ear etc., or even to be alternatively other suitable The object of type, and it is not limited to human body.The predetermined bio information is such as fingerprint, palmmprint, ear stricture of vagina etc..

Below, so that capacitance type sensor is as biometric information sensor as an example, various embodiments of the present invention are illustrated.

Below, various embodiments of the present invention are illustrated.

See also Fig. 1 and circuit structure that Fig. 2, Fig. 1 are one embodiment of bio information sensing device of the present invention shows It is intended to.Top views of the Fig. 2 for the part-structure of bio information sensing device shown in Fig. 1.The bio information sensing device 1 includes Multiple sensing electrodes 111 and drive circuit 20.The drive circuit 20 is connected with the plurality of sensing electrode 111, for driving Dynamic the plurality of sensing electrode 111 performs bio information sensing.The bio information sensing device 1 is, for example, fingerprint sensing dress Put, the sensing device of the suitable type such as ear stricture of vagina sensing device.

The bio information sensing device 1 is, for example, capacitive bio information sensing device, is alternatively other suitable classes The bio information sensing device of type.

Generally, capacitive sensing device includes the sensing device of mutual capacitance type and the sensing device of self-capacitance.

Different from the matching relationship of sensing electrode 111 according to drive circuit 20, bio information sensing device 1 can be from electricity The bio information sensing device of the bio information sensing device or mutual capacitance type of appearance formula.

In the bio information sensing device based on mutual capacitance type, the bio information sensing device of the mutual capacitance type can be wrapped Include multiple drive electrodes and multiple sensing electrodes.Mutual capacitance is formed between each drive electrode and a sensing electrode.In sensing, Drive circuit provides pumping signal to drive electrode, and receives the sensing signal from sensing electrode output.When target object connects During the near or touch bio information sensing device, the quantity of electric charge meeting of the mutual capacitance being formed between drive electrode and sensing electrode There is corresponding change, so as to sensing electrode can export corresponding sensing signal to drive circuit, and then obtain associated biomolecule letter Breath.

In the bio information sensing device based on self-capacitance, the bio information sensing device of the self-capacitance includes Multiple sensing electrodes.Each sensing electrode can form electric capacity over the ground.In sensing, drive circuit provides pumping signal to sensing Electrode, and receive the sensing signal from sensing electrode output.When target object approaches or touches the bio information sensing dress When putting, electric capacity between target object and sensing electrode, is formed, cause the change of the quantity of electric charge in sensing electrode, so as to sensing electricity Pole exports corresponding sensing signal to drive circuit, and then obtains relevant biological information.

The target object is, for example, the proper site on the human bodies such as finger, toe, ear, but be the invention is not limited in This, the target object is alternatively other suitable objects, it is not limited to human body, is alternatively other live bodies, or even prosthese.

In the present embodiment, the bio information sensing device 1 is, for example, the sensing device of self-capacitance.

The plurality of sensing electrode 111 is arranged in multiple lines and multiple rows mode.So, ground, in other embodiments, institute are changed It can be also in that Else Rule or non-regular are arranged to state multiple sensing electrodes 111.

For the sensing electrode 111 of same row：Hold to a sensing electrode 111 when the drive circuit 20 provides pumping signal When row bio information is sensed, there is provided one first reference signal is to the part or all of sensing electrode in remaining sensing electrode 111 111.It is preferred that the drive circuit 20 provides first reference signal gives remaining whole sensing electrode 111.

As the drive circuit 20 is providing the pumping signal to the sensing electrode in each row sensing electrode 111 When 111, there is provided first reference signal to remainder or whole sensing electrode 111, so as to be applied with first reference 111 pairs of parasitic effects in the sensing electrode 111 for performing bio information sensing of sensing electrode of signal are knowable, so as to institute State drive circuit 20 and knowable parasitic effects can be offset when subsequently to the calculating of bio information, and then improve the sense of bio information Survey precision.

First reference signal is, for example, constant voltage signal.

Or, the pressure reduction between first reference signal and the pumping signal keeps constant, for example, first ginseng Examine that signal is identical with the pumping signal, so as to reducing remaining sensing electrode 111 and performing the sensing electricity of bio information sensing The charge/discharge electricity amount of the parasitic capacitance between pole 111, further improves the sensing precision of bio information.

In the present embodiment, the drive circuit 20 drives sensing electrode 111 to perform bio information sensing line by line.So, Ground is changed, in other embodiments, the drive circuit 20 also once can drive multirow sensing electrode 111 to perform life simultaneously Thing information is sensed.

Further, in the present embodiment, for the sensing electrode 111 of same a line：The drive circuit 20 is carried simultaneously Bio information sensing is performed to section senses electrode 111 for the pumping signal, and one second reference signal is provided and felt to remaining The part or all of sensing electrode 111 surveyed in electrode 111.It is preferred that provide second reference signal all sensing to remaining Electrode 111.

For the sensing electrode 111 of same a line：The drive circuit 20 is by successively repeatedly providing the excitation letter simultaneously Number to section senses electrode 111 perform bio information sensing, so as to driven a line sensing electrode 111 perform bio information sense Survey.

When the plurality of sensing electrode 111 is formed on a chip, driven using the timesharing to a line sensing electrode 111 Mode, so as to the pin number on the chip can be reduced, in this regard, having related narration below.

So, ground is changed, in other embodiments, the drive circuit 20 also can drive the sensing electrode of a line simultaneously 111 are performed both by bio information sensing.For example, the plurality of sensing electrode 111 is formed in display screen.When the plurality of sensing When electrode 111 is arranged on chip, the drive circuit is also can be while drive the sensing electrode 111 of a line to be performed both by biological letter Breath sensing.

Further, since the drive circuit 20 is providing the pumping signal to the part sense in each row sensing electrode 111 When surveying electrode 111, there is provided the part or all of sensing electrode 111 that second reference signal is given in remaining sensing electrode 111, from And, it is applied with 111 pairs of parasitisms in the sensing electrode 111 for performing bio information sensing of sensing electrode of second reference signal Impact be it is knowable, so as to, the drive circuit 20 can offset knowable parasitic effects when subsequently to the calculating of bio information, And then improve the sensing precision of bio information.

Second reference signal is, for example, constant voltage signal.

Or, the pressure reduction between second reference signal and the pumping signal keeps constant, for example, second ginseng Examine that signal is identical with the pumping signal, so as to reducing remaining sensing electrode 111 and performing the sensing electricity of bio information sensing The charge/discharge electricity amount of the parasitic capacitance between pole 111, further improves the sensing precision of bio information.

In some embodiments, the bio information sensing device 1 includes multiple sensing units 11.Each sensing Unit 11 includes sensing electrode 111 described in, the first controlling switch 113, and the second controlling switch 115.First control is opened Close 113, second controlling switch 115 to be connected with the sensing electrode 111.

The drive circuit 20 includes scan drive circuit 21, sensing drive circuit 22, and reference signal generation circuit 23. 115 points of the first controlling switch 113 and the second controlling switch in the scan drive circuit 21 and the plurality of sensing unit 11 Do not connect, for driving the first controlling switch 113 and 115 timesharing of the second controlling switch conducting in each sensing unit 11.Institute State sensing drive circuit 22 to be connected with sensing electrode 111 by the first controlling switch 113 in each sensing unit 11, for passing through First controlling switch 113 of conducting provides the pumping signal and performs bio information sensing to sensing electrode 111.The reference letter Number produce circuit 23 be connected with the sensing electrode 111 by the second controlling switch 115 in each sensing unit 11, for passing through Second controlling switch 115 of conducting provides first reference signal to sensing electrode 111.

For the sensing electrode 111 of same row：In the scan drive circuit 21 drives a sensing unit 11 first When controlling switch 113 is turned on, the second controlling switch 115 is ended, the part or all of sensing list in remaining sensing unit 11 is driven First controlling switch 113 of unit 11 is ended, the second controlling switch 115 is turned on, and the reference signal generation circuit 23 is by conducting The second controlling switch 115 provide first reference signal to sensing electrode 111.

The sensing drive circuit 22 provides the pumping signal to sensing electrode by the first controlling switch 113 of conducting 111 perform bio information sensing, and receive the sensing signal from the output of sensing electrode 111, to obtain bio information.

Further, drive the first controlling switch 113 of a line sensing unit 11 to turn on when the scan drive circuit 21, When second controlling switch 115 is ended, the sensing drive circuit 22 provides described simultaneously by the first controlling switch 113 of conducting Pumping signal performs bio information sensing, the reference signal generation circuit 23 by conducting the to section senses electrode 111 One controlling switch 113 provides sense of second reference signal to the part or all of sensing unit 11 in remaining sensing unit 11 Survey electrode 111.

In the present embodiment, the drive circuit 20 can further include data selection circuit 24, and the data are selected Circuit 24 is connected respectively with the sensing drive circuit 22 and the reference signal generation circuit 23.The data selection circuit 24 Further it is connected with the first controlling switch 113 in each sensing unit 11.For each sensing unit 11, selected by the data Circuit 24 is selecting to export the second reference signal or export the sensing provided by the reference signal generation circuit 23 The pumping signal provided by drive circuit 22 is to sensing electrode 111.When the data selection circuit 24 exports the pumping signal During to a sensing electrode 111, sensing signal that the sensing electrode 111 sensed further is exported to the drive circuit 20.

As the drive circuit 20 is provided with the data selection circuit 24, such that it is able to realize the sensing electricity to each row Pole 111 carries out timesharing and performs bio information sensing.

In one embodiment, the data selection circuit 24 includes multiple data selectors (Multiplexer) 241. 241 coupling part sensing unit 11 of each data selector, and further with the reference signal generation circuit 23 and the sense Survey drive circuit 22 to connect respectively.The plurality of data selector 241 is used to select the output pumping signal or described second Reference signal is to sensing electrode 111.Alternatively, each data selector 241 connects at least two row sensing units 11.

The drive circuit 20 once exports the pumping signal to a sensing by each data selector 241 simultaneously respectively Electrode 111 performs bio information sensing, and exports second reference signal respectively to same a line by each data selector 241 Remaining sensing electrode 111 in part or all of sensing electrode 111.

The drive circuit 20 is opened by the first control for successively repeatedly passing through each data selector 241 and conducting simultaneously Close 113 and the pumping signal is exported to sensing electrode 111, driven a line sensing electrode 111 to perform bio information sensing.

Ground is changed, in other embodiments, the data selection circuit 24 is alternatively other suitable circuit knots Structure, it is not limited to multiple data selectors 241 described herein.In addition, when the drive circuit 20 provides described sharp simultaneously When encouraging signal to often capable sensing electrode 111, the data selection circuit 24 may also be omission.

The drive circuit 20 can further include control unit 30.Described control unit 30 and the scan drive circuit 21 and the plurality of data selector 241 connect respectively, drive each row sensing unit for controlling the scan drive circuit 21 The conducting sequential of the first controlling switch 113 and the second controlling switch 115 in 11, and selected by controlling the plurality of data Device 241 carrys out the sequential of pumping signal described in controlled output and second reference signal to sensing electrode 111.

For example, described control unit 30 controls the scan drive circuit 21 and turns on the first controlling switch 113 line by line, and When controlling the conducting of the first controlling switch 113 of each row sensing unit 11, the sensing of the part row or whole rows in remaining row is controlled Second controlling switch 115 of unit 11 is turned on.For same sensing unit 11：Described control unit 30 controls the turntable driving 21 timesharing of circuit turns on the first controlling switch 113 and the second controlling switch 115.

Described control unit 30 controls 241 timesharing of the data selector output pumping signal and gives the data choosing Select each sensing unit 11 that device 241 is connected.

In some embodiments, the bio information sensing device 1 for example further include multiple scan line group B and Multiple data wire group D.Connect a line sensing unit 11, each data wire group D connections string sensing per scan line group B Unit 11.

Specifically, the first scan line B1 and the second scan line B2 are included per scan line group B.Each data wire group D Including the first data wire D1 and the second data wire D2.

First controlling switch 113 includes coordination electrode G1, the first transmission electrode S11 and the second transmission electrode S12. Second controlling switch 115 includes coordination electrode G2, the first transmission electrode S21 and the second transmission electrode S22.Described first Scan line B1 connects coordination electrode G1 of the scan drive circuit 21 and first controlling switch 113.Second scanning Line B2 connects coordination electrode G2 of the scan drive circuit 21 and second controlling switch 115.The first data wire D1 Connect the first transmission electrode S11 of the data selector 241 and the first controlling switch 113.The second data wire D2 connections First transmission electrode S21 of the reference signal generation circuit 23 and the second controlling switch 115.First controlling switch 113 The second transmission electrode S12 connect the sensing electrode 111.The second transmission electrode S22 connections of second controlling switch 115 The sensing electrode 111.

The first data wire D1 is used to transmit the pumping signal and second reference signal, second data wire D2 is used to transmit first reference signal, and the scan drive circuit 21 is by first scan line B1, the second scan line B2 provides scanning open signal to the first controlling switch 113 and the second controlling switch 115, controls 113 He of the first controlling switch Second controlling switch 115 is turned on, and provides scanning pick-off signal to the first control by first scan line B1, the second scan line B2 System switch 113 and the second controlling switch 115, control the first controlling switch 113 and the cut-off of 115 passes is opened in the second control.

First scan line B1 and the second scan line B2 extend along line direction, arrange along column direction.First number Extend along column direction according to line D1 and the second data wire D2, arrange along line direction.

In some embodiments, the bio information sensing device 1 for example further include the first reference signal line R1, Second reference signal line R2 and sensing signal line L.The first reference signal line R1 connects the reference signal generation circuit 23 With the second data wire D2, for transmitting first reference signal.The second reference signal line R2 connects the reference signal Circuit 23 and the plurality of data selector 241 are produced, for transmitting second reference signal.Sensing signal line L connects The sensing drive circuit 22 and the plurality of data selector 241 are connect, for the pumping signal being transmitted to sensing electrode 111 And transmission gives sensing drive circuit 22 from the sensing signal of sensing electrode 11.

The first reference signal line R1, the second reference signal line R2 and sensing signal line L mainly extend along line direction.

Fig. 3 is referred to, Fig. 3 is that the circuit structure of an embodiment of the data selector 241 shown in Fig. 1 of the present invention is illustrated Figure.The data selector 241 includes 8 switch elements 243, each switch element 243 include a first choice switch S1 and One second selecting switch S2.The first choice switch S1 includes coordination electrode G3, the transmission of the first transmission electrode S31 and second Electrode S32.Second selecting switch S2 includes coordination electrode G4, the first transmission electrode S41 and the second transmission electrode S42.Institute State control unit 30 to be connected with coordination electrode G3 and coordination electrode G4 in each switch element 243 respectively.First transmission Electrode S31 is connected with the sensing drive circuit 22.The first transmission electrode S41 is connected with the reference signal generation circuit 23 Connect.The second transmission electrode S32 and the second transmission electrode S42 in each switch element 243 is connected, and is connected to the first control First transmission electrode S11 of system switch 113.

For same switch element 243：Described control unit 30 controls the first choice switch S1 and second and selects to open Close S2 timesharing conducting, i.e. when first choice switch S1 is turned on, the second selecting switch S2 cut-off, when the second selecting switch S2 is led When logical, first choice switch S1 cut-offs.For same data selector 241：When described control unit 30 controls a switch element When first choice switch S1 conductings in 243, the second selecting switch S2 are ended, the first choosing in rest switch unit 243 is controlled Select switch S1 cut-offs, the conducting of the second selecting switch S2.S1 is switched by the first choice for turning on, the sensing drive circuit 22 is carried The sensing electrode 111 of the sensing unit 11 turned on for the pumping signal to the first controlling switch 113；By the second choosing for turning on Switch S2 is selected, the reference signal generation circuit 23 provides the biography that second reference signal is turned on to the second controlling switch 115 The sensing electrode 111 of sense unit 11.

In the present embodiment, the quantity of the plurality of data selector 241 is, for example, 16, each data selector 241 include 8 switch elements 243.Accordingly, with a line sensing electrode 111 quantity be 128.

It should be noted that in FIG, the size of accompanying drawing is limited to, Fig. 1 only illustrates that each data selector 241 is distinguished It is connected with two row sensing units 11, if corresponding with the structure of the data selector 241 shown in Fig. 3, Fig. 1 is actually eliminated often The structure that one data selector 241 is also connected with other six row sensing unit 11.In addition, the structure of Fig. 4 described later and Fig. 1 institutes The structure shown is corresponding, equally eliminates the structure that each data selector 241 is also connected with other six row sensing unit 11, Explain in this together.

Correspondingly, for example by 16 data selectors 241, output 16 is sharp simultaneously every time for the drive circuit 20 16 sensing electrodes 111 of the signal correspondence to same a line are encouraged, and while 112 the second reference signal correspondences of output are to same a line 112 sensing electrodes 111.

So that the bio information sensing device 1 is fingerprint sensing device as an example, when the finger of user approach or touch it is described During the sensing electrode 111 of multiple sensing units 11, due to ridge, paddy it is different from the distance of sensing electrode 111, therefore, ridge, paddy and sense The electric capacity correspondence difference that electrode 111 is formed respectively is surveyed, so as to the impact to the quantity of electric charge in sensing electrode 111 is just different, from And drive circuit 20 can know corresponding finger print information according to the sensing signal of the output of sensing electrode 111.

The operation principle of 1 one embodiment of bio information sensing device is as follows.

Described control unit 30 controls the first choice switch S1 in the switch element 243 in each data selector 241 Conducting, the cut-off of the second selecting switch S2, the first choice controlled in the rest switch unit 243 in each data selector 241 are opened S1 cut-offs are closed, the second selecting switch S2 is turned on, correspondingly, the sensing drive circuit 22 is by leading in each data selector 241 Logical first choice switch S1 provides the pumping signal to the first data wire D1, and the reference signal generation circuit 23 passes through The second selecting switch S2 turned in each data selector 241 is provided in second reference signal to the first data wire D1.It is logical Many secondary controls of described control unit 30 are crossed, the first choice in each switch element 243 in each data selector 241 is opened Close S1 timesharing conducting.

Described control unit 30 control the scan drive circuit 21 drive the first controlling switch 113 to turn on line by line, second Controlling switch 115 is ended, and turn in the first controlling switch 113 for controlling each row respectively, the cut-off of the second controlling switch 115 it is same When, control remaining row the first controlling switch 113 end, the second controlling switch 115 is turned on, correspondingly, first data wire Pumping signal on D1 is exported to sensing electrode 111 by the first controlling switch 113 of conducting, and is received from sensing electrode The sensing signal of 111 outputs, to perform bio information sensing, the second reference signal on the first data wire D1 is by conducting The first controlling switch 113 export to sensing electrode 111, in addition, the reference signal generation circuit 23 by conducting second Controlling switch 115 provides first reference signal to sensing electrode 111.

By when each drive part sensing electrode 111 performs bio information and senses, there is provided the first reference signal and the Two reference signals give remaining corresponding sensing electrode 111, improve the sensing of the bio information of the bio information sensing device further 1 Precision.

Fig. 1, Fig. 4 to Fig. 6 are seen also, Fig. 4 is the knot of another embodiment of bio information sensing device of the present invention Structure schematic diagram.Cut-away section structural representations of the Fig. 5 for bio information sensing device shown in Fig. 4.Fig. 6 is biological letter described in Fig. 4 The use state figure of breath sensing device.The bio information sensing device 1 includes biometric information sensor 2.The bio information Sensor 2 includes insulated substrate 2a, the plurality of sensing unit 11, the plurality of scan line group B, the plurality of data line-group Group D and the first reference signal line R1.The plurality of sensing unit 11, the plurality of scan line group B, the plurality of number It is formed on the insulated substrate 2a according to line-group group D and the first reference signal line R1.

In the present embodiment, the first controlling switch 113 and the second controlling switch 115 in each sensing unit 11 Thin film transistor (TFT) (Thin Film Transistor, TFT) switch is such as, the insulated substrate 2a is, for example, glass substrate, So as to the biometric information sensor 2 being made using the technique of formation TFT switch on glass substrate, and then reducing biological letter Breath sensor 2 and the manufacturing cost including the biometric information sensor 2.When first controlling switch 113, second Controlling switch 115 be thin film transistor switch when, coordination electrode G1, G2 be grid, described first transmission electrode S11, S21 For source electrode, described second transmission electrode S12, S22 are drain electrode.

So, it is glass substrate that the present invention is not intended to limit the insulated substrate 2a, is alternatively the insulation base of other suitable types Plate, equally, does not limit first controlling switch 113 yet and second controlling switch 115 is thin film transistor switch, It can be the switch of other suitable types.

The thin film transistor switch is, for example, low temperature polycrystalline silicon (LTPS) thin film transistor switch, indium gallium zinc (IGZO) thin film transistor switch of the suitable type such as thin film transistor switch, amorphous silicon film transistor switch.It is preferred that institute State thin film transistor switch and switch for low-temperature polysilicon film transistor.

The second surface A2 that the insulated substrate 2a is included first surface A1 and is oppositely arranged with first surface A1, described One surface A 1 is used to receive the touch of target object or is close to input, the plurality of sensing unit 11, the plurality of scanning line-group Group B, the plurality of data wire group D and the first reference signal line R1 are arranged on the second surface A2.

The sensing electrode 111 of the plurality of sensing unit 11 is compared to first controlling switch 113, second control 113, the plurality of scan line group B and the plurality of data line-group D groups are switched closer to the second surface A2.

First controlling switch 113, second controlling switch 115, the plurality of scan line group B and described many Individual data line-group group D is located at the side of the sensing electrode 111 of the plurality of sensing unit 11 back to the insulated substrate 2a.

It is preferred that the sensing electrode 111 of the plurality of sensing unit 11 cover first controlling switch 113, described Two controlling switches 115, the plurality of scan line group B and the plurality of data wire group D.

The biometric information sensor 1 further includes passivation layer 16, and the passivation layer 16 is arranged on the plurality of sensing On unit 11, the plurality of scan line group B, the plurality of data wire group D and the first reference signal line R1.

The passivation layer 16 is used for the surface for planarizing the biometric information sensor 2, and single to the plurality of sensing First 11 grade elements are protected.

See also the manufacture method flow chart of Fig. 5 and Fig. 7, Fig. 7 for an embodiment of biometric information sensor 2. The manufacture method of the biometric information sensor 2 is as follows.

F1：One insulated substrate 2a is provided；

The insulated substrate 2a is, for example, glass substrate.

F2：The plurality of sensing electrode 111 is formed on the insulated substrate 2a；

The sensing electrode 111 is for example made up of metal material.So, ground is changed, the sensing electrode 111 is alternatively to be had Other suitable conductive materials are made, and for example, the sensing electrode 111 also can be made up of transparent conductive material, described transparent Conductive material is, for example, tin indium oxide, indium zinc oxide etc..In addition, the sensing electrode also can be by alloy material systems such as molybdenum lithium molybdenums Into.The sensing electrode 111 is for example formed directly on the insulated substrate 2a, so as to closer to first surface A1, improve sense Survey precision.

F3：The first insulating barrier 12 is formed in the plurality of sensing electrode 111；

First insulating barrier 12 is, for example, that the materials such as silicon oxide, silicon nitride are made.

F4：The first controlling switch 113 and the second controlling switch 115 are formed on first insulating barrier 12, and in described Formed on first insulating barrier 12 and be through to the through hole H of sensing electrode 111, by the through hole H, the first controlling switch 113 and the Two controlling switches 115 are connected with sensing electrode 111；

First controlling switch 113 and the second controlling switch 115 of each sensing unit 11 is formed in sensing electrode 111 Side, and be connected with sensing electrode 111 by through hole H respectively.

F5：Passivation layer 16 is formed in first controlling switch 113 and second controlling switch 115.

The biometric information sensor 2 makes and finishes.It should be noted that in above-mentioned manufacture method, omitting and being formed The step of the plurality of scan line group B, multiple data wire group D and the first reference signal line R1.

As the processing technology of the biometric information sensor 2 formed according to above-mentioned manufacture method is simple, additionally need not set again Put a cover sheet or form coat (Coating layers), so as to manufacturing cost can be saved.

The method of above-mentioned making biometric information sensor of the invention 2 is equally applicable to the biological letter for making other suitable constructions Breath sensor, it is not limited to make biometric information sensor 2 herein.For example, the sensing unit 11 for example includes sensing Electrode 111 and sensing circuit (sign).For above-mentioned biometric information sensor 2, the sensing circuit includes first control System switch 113 and the second controlling switch 115.So, for the biometric information sensor of other structures, the sensing circuit not office It is limited to include the situation of the first controlling switch 113 and the second controlling switch 115, for example, the sensing circuit is alternatively includes the One controlling switch 113, and the situation of the second controlling switch 115 is omitted, correspondingly, the second data wire D2 and the first reference signal The elements such as line R1 are also corresponded to and are omitted.Again for example, the sensing circuit is alternatively other circuit structures, and is not limited to herein The first described controlling switch 113 and the second controlling switch 115.So, the biometric information sensor of these structures is made, the present invention The method of above-mentioned making biometric information sensor 2 is also applicable.It is thus possible to save make biometric information sensor into This.Accordingly, the manufacturing cost of the biometric information sensor for being made by the manufacture method is relatively low, and senses precision relatively It is high.

So, ground is changed, in other embodiments, the manufacture method of the biometric information sensor 2 is alternatively：Institute The first controlling switch 113 and the second controlling switch 115 that each sensing unit 11 is formed on insulated substrate 2a is stated, then in each sensing Sensing electrode 111 is formed in first controlling switch 113 and second controlling switch 115 of unit 11, next, in sense Survey.Thus, also possible.Need explanation It is the step of being also omit to the plurality of scan line group B, multiple data wire group D and the first reference signal line R1 herein Description.

Continue with refering to Fig. 5, and see also Fig. 8, Fig. 8 is opened with the second control to make the first controlling switch 113 Close 115 method flow diagram.It is so that the first controlling switch 113 and the second controlling switch 115 are as amorphous silicon film transistor as an example, right The manufacture method that the first controlling switch 113 and the second controlling switch 115 are formed during biometric information sensor 2 is made is entered Row is described as follows.

F41：Coordination electrode G1 and the second controlling switch of the first controlling switch 113 are formed on first insulating barrier 12 115 coordination electrode G2；

F42：The second insulating barrier 13 is formed in first insulating barrier 12, coordination electrode G1, G2；

Second insulating barrier 13 is, for example, that the materials such as silicon oxide, silicon nitride are made.

F43：Active layer 14,15 is formed on second insulating barrier 13；

The active layer 14,15 is amorphous silicon layer.

F44：Formed on second insulating barrier 13 and first insulating barrier 12 and be through to the sensing electrode 111 Through hole H；

It should be noted that formed on second insulating barrier 13 and first insulating barrier 12 being through to the sensing The through hole H of electrode 111 can be incorporated in same step and realize, so, be formed alternatively in two different steps.

F45：The first transmission electrode S11 and second that the first controlling switch 113 is formed on second insulating barrier 13 is passed Transmission pole S12, the first transmission electrode S21 and the second transmission electrode S22 that form the second controlling switch 115, and second biography Transmission pole S12 and the second transmission electrode S22 are full of the through hole H, to connect the sensing electrode 111 respectively.

The first transmission electrode S11 and the second transmission electrode S12 is located at the both sides of the active layer 14, and described first passes Transmission pole S21 and the second transmission electrode S22 are located at the both sides of the active layer 15, so as to form first controlling switch 113 With second controlling switch 115.

In the present embodiment, the second transmission electrode S12 and second controlling switch of first controlling switch 113 115 the second transmission electrode S22 is connected with the sensing electrode 111 by a through hole H respectively.So, in other embodiments, The second transmission electrode S12's and second controlling switch 115 of first controlling switch 113 in same sensing unit 11 Second transmission electrode S22 can be connected with the sensing electrode 111 by same through hole H.

In step F5：In second insulating barrier 13, the first transmission electrode S11, active layer 14, the second transmission electrode S12, The passivation layer 16 is formed on first transmission electrode S21, active layer 15, the second transmission electrode S22.

The first controlling switch 113 formed in above-mentioned manufacture method and the second controlling switch 115 mainly bottom gate type (Bottom-Gate) thin film transistor (TFT), so, first controlling switch 113 and the second controlling switch 115 are alternatively top gate type (Top-Gate) thin film transistor (TFT), such as low-temperature polysilicon film transistor.

Need it is further noted that the plurality of scan line group B, multiple data wire group D, the first reference signal line R1, first controlling switch 113, second controlling switch 115 connection cabling it is last for example by the modes such as via with Around being formed on the second surface A2 of the insulated substrate 2a connect up (sign) be connected, with aforesaid drive circuit 20 Or corresponding circuit carries out signal transmission in control chip 3 described later.

Alternatively, the biometric information sensor 2 further includes the scan drive circuit 21, the choosing of the plurality of data Select device 241, the second reference signal line R2 and sensing signal line L.The scan drive circuit 21, the plurality of number According to selector 241, the second reference signal line R2 and the sensing signal line L-shaped into the second of the insulated substrate 2a In surface A 2.

The scan drive circuit 21, the plurality of data selector 241, the second reference signal line R2 and described Sensing signal line L is arranged on around the plurality of sensing unit 11.

The first choice switch S1 of the data selector 241 and the second selecting switch S2 are for example also thin film transistor (TFT) Switch.The scan drive circuit 21 generally comprises multiple controlling switch (not shown), and the plurality of controlling switch is, for example, Thin film transistor switch.Correspondingly, the plurality of data selector 241 and the scan drive circuit 21 are in the described first control When switch 113 and second controlling switch 115 are formed, formed by same or analogous processing technology in the lump, so as to improve The integrated level of biometric information sensor 2, and reduce cost of manufacture.

In some embodiments, the bio information sensing device 1 includes control chip 3, and the control chip 3 includes Described control unit 30, the reference signal generation circuit 23, and it is described sensing drive circuit 22.That is, aforesaid drive circuit A part of circuit in 20 is formed in control chip 3, and a part is formed on biometric information sensor 2, is arranged such, a side The integrated level of bio information sensing device 1 is improved in face, reduces the volume of the bio information sensing device 1, in addition, can also reduce The manufacturing cost of bio information sensing device 1.

Alternatively, the biometric information sensor 2 and the control chip 3 are for example respectively nude film (Die), the control Chip 3 is for example arranged on the insulated substrate 2a by flip technique (Flip-Chip).When the insulated substrate 2a is, for example, During glass substrate, the control chip 3 is for example bound by the mode of glass top chip (Chip On Glass, COG) (Bonding) on the glass substrate.When the insulated substrate 2a is, for example, film substrate, the control chip 3 is for example It is bundled on the film substrate by the mode of chip-on-film (Chip On Film, COF).So, the control chip 3 Can be formed on the insulated substrate 2a using other suitable techniques, be not limited to flip technique described herein.

After the control chip 3 is arranged on the insulated substrate 2a of the biometric information sensor, then by the control Coremaking piece 3 is placed in a mold with the biometric information sensor 1, for example, form packaging body by being molded (Molding) technique (not shown) on the biometric information sensor 2 and the control chip 3, so as to be formed as a chip (Chip).The envelope Dress body is, for example, that epoxide resin material is made, but is not limited to the epoxide resin material, is alternatively other suitable materials. So, ground is changed, after the control chip 3 is arranged on the insulated substrate 2a of the biometric information sensor, also may not be used It is packaged technique.

After the bio information sensing device 1 is formed, the first surface A1 of the insulated substrate 2a is used to receive target Object approaches or touches input, in other words, when user senses bio information using the bio information sensing device 1, institute First surface A1 is stated compared to the second surface A2 more adjacent objects objects.

In other embodiments, the scan drive circuit 21, the data selection circuit 24, the second reference letter Number line R2 and sensing signal line L also non-can be arranged on the insulated substrate 2a.Such as described 21 He of scan drive circuit The data selection circuit 24 is may also be arranged in the control chip 3, or, it is arranged in other chip, or, with Circuit mode outside chip exists also possible.

Fig. 9 is referred to, Fig. 9 is the structural representation of the another embodiment of bio information sensing device of the present invention.The life Thing information sensor 1 further includes connector 4, and the connector 4 is used to connect the control chip 3 with the biological letter Breath sensor 2.The connector 4 is, for example, flexible circuit board (Flexible Printed Circuit Board, FPCB).Institute State control chip 3 to be for example arranged on the flexible circuit board 4, and passed with the bio information by the flexible circuit board 4 Sensor 2 connects.By the flexible circuit board 4, letter is carried out between the biometric information sensor 2 and the control chip 3 Number transmission.

In this embodiment, the biometric information sensor 2 and the control chip 3 can also be a chip (Chip), or, the biometric information sensor 2 is nude film, and the control chip 3 is chip, or, the bio information is passed Sensor 2 and the control chip 3 are nude film.

When the control chip 3 is connected with the biometric information sensor 2 by flexible circuit board 4, the biological letter Breath sensor 2 for example further includes reinforcing plate (not shown), and the reinforcing plate is attached to described blunt by bonding piece (e.g., glue) Change on layer 16 and the flexible circuit board 4.

In the respective embodiments described above, when the biometric information sensor 2 is nude film or chip, by arranging the data Selection circuit 24 is corresponding to the sensing electrode 111 for controlling timesharing output drive signal to same a line.As the data select electricity Each data selector 241 on road 24 is respectively provided with the Single port (not shown) being connected with the sensing drive circuit 22, institute State port for transmitting pumping signal or sensing signal, correspondingly, each port of correspondence is arranged on the biometric information sensor 2 One connection pin (not shown), to connect the port with the sensing drive circuit 22.So, it is possible to reduce bio information The quantity of the connection pin between sensor 2 and control chip 3.

Ground is changed, in other embodiments, for example, the biometric information sensor 2 is alternatively and is formed in display screen In or display screen on, and be not integrated into a nude film or a chip.In the biometric information sensor 2 is formed in display screen or When on display screen, the control chip 3 can drive a line sensing electrode 111 to perform bio information sensing simultaneously.

Figure 10 is referred to, Figure 10 is the structural representation of another embodiment of sensing unit of the present invention.The sensing unit 11 include 2 first controlling switches 113 being connected in parallel and 2 second controlling switches 115 being connected in parallel.

Figure 11 is referred to, Figure 11 is the structural representation of the another embodiment of bio information sensing device of the present invention.Institute State between drive circuit 20 and each sensing electrode 111 respectively by single data wire L1 connections, omit the first controlling switch 113 and second controlling switch 115.Correspondingly, the drive circuit 20 is by exporting corresponding signal respectively to each sensing electrode 111 is also feasible.

Figure 12 is referred to, Figure 12 is the structural representation of an embodiment of electronic equipment of the present invention.The electronic equipment 9 Including the bio information sensing device 1 described in any of the above-described embodiment.The electronic equipment 9 is, for example, that portable electronic is produced Product, household formula electronic product or vehicle electronics product.However, the electronic equipment does not limit to electronic product listed herein, also It can be the electronic product of other suitable types.The portable electronic product is, for example, mobile terminal, the mobile terminal example It is such as the suitable mobile terminal such as mobile phone, panel computer, notebook computer, Wearable product.The household formula electronic product example It is such as the suitable household formula electronic product such as intelligent door lock, TV, refrigerator, desktop computer.The vehicle electronics product is, for example, The suitable vehicle electronics product such as Vehicular display device, drive recorder, navigator, car refrigerator.

So that the electronic equipment 9 is as mobile phone as an example, the bio information sensing device 1 is just for example being arranged on the mobile phone Any appropriate position such as face, side, the back side, in addition, the bio information sensing device 1 may be configured as exposing the outer of mobile phone Shell, may also be arranged on the inside of mobile phone.In this embodiment, the bio information sensing device 1 is arranged on the front of mobile phone.

According to the bio information sensed by the bio information sensing device 1, the electronic equipment 9 for example carries out user Identification authentication, quickly on-line payment, startup application program (APP) etc..

As the electronic equipment 9 includes the bio information sensing device 1, the sense of the bio information sensing device 1 Survey precision higher, therefore, the better user experience of the electronic equipment 9.

Refer to Figure 13, circuit block diagrams of the Figure 13 for one embodiment of electronic equipment shown in Figure 12.The electronic equipment 9 Further include main control chip 5.The main control chip 5 is connected with the bio information sensing device 1, for passing with bio information Induction device 1 enters row data communication.The main control chip 5 is, for example, one chip or chipset.When main control chip 5 is chipset When, the chipset includes application processor (Application Processor, AP) and power supply chip.In addition, the chip Group can further include storage chip.When main control chip 5 is one chip, the main control chip 5 is, for example, application processor. Further, the application processor also can be replaced central processing unit (Central Processing Unit, CPU).

The main control chip 5 includes earth terminal 50, the connection equipment of the earth terminal 50 ground, the ground connection letter on receiving device ground Number, ground signalling is represented with GND in Fig. 9.Also known as systematically, for example, the power supply of electronic equipment 9 is negative on the equipment ground Pole, power supply is as being battery.Ground signalling GND is also known as system ground voltage, system earth signal, equipment ground voltage or sets Standby earth signal etc..Ground signalling GND is constant voltage, as the voltage reference of each circuit in electronic equipment 9, described Ground signalling GND is, for example, the voltage signals such as 0V (volt), 2V, (- 1) V.Generally, equipment ground not earth ground or definitely Greatly.So, when electronic equipment 9 is connected with earth ground by conductor, it is likely to as earth ground the equipment.

In aforesaid each embodiment, the bio information sensing device 1 is can be with a domain as voltage reference. The domain is the domain on the basis of ground signalling GND.Ground signalling GND is used as each circuit in bio information sensing device 1 Voltage reference.

To improve the signal to noise ratio of the sensing signal of bio information sensing device 1, present invention further propose that using modulation skill Art scheme improves the technical purpose of signal to noise ratio to reach, and the modulation technique scheme is applied to the life described in the respective embodiments described above Thing information sensor 1.

For example, the technical scheme by modulating ground is exported to the signal of sensing unit 11 reaching uniform modulation.

Specifically, the drive circuit 20 for example further includes the first earth terminal 31, the second earth terminal 32, modulation circuit 33rd, and voltage generation circuit 34.The modulation circuit 33 be connected to first earth terminal 31 and second earth terminal 32 it Between.The modulation circuit 33 is further connected with the voltage generation circuit 34.First earth terminal 31 is connected to equipment Ground.The voltage generation circuit 34 is used to provide voltage drive signals to the modulation circuit 33.The modulation circuit 33 Correspond to according to ground signalling GND of the voltage drive signals and the equipment ground modulated signal MGND is produced to described second Earth terminal 32.Modulated signal MGND is exported to the letter on the sensing unit 11 for drive circuit 20 described in uniform modulation Number, for example, first reference signal, second reference signal, the pumping signal, the scanning open signal and institute State scanning pick-off signal.Wherein, (for example, 32) the second earth terminal is modulation ground on the ground of loading modulated signal MGND.

For example, the pumping signal includes first voltage signal and second voltage signal.The pumping signal is first electric The square-wave pulse signal of pressure signal and second voltage signal alternate.Wherein, the first voltage signal is less than described second Voltage signal, the first voltage signal are, for example, ground signalling GND.Modulated signal MGND is electric for raising described second Pressure signal, to improve the signal to noise ratio of sensing signal.

When the drive circuit 20 is received from the sensing signal of the output of sensing electrode 111, need to sensing signal Back-modulation is carried out, corresponding bio information is obtained.

In this embodiment, the bio information sensing device 1 is with two domains as voltage reference.Two domains point Domain 60 on the basis of ground signalling GND and the domain on the basis of modulated signal MGND 70 are not shown as.Wherein, being grounded letter The earth terminal of the circuit in domain 60 on the basis of number GND is directly connected to equipment ground, in the domain on the basis of modulated signal MGND The earth terminal of the circuit in 70 is directly connected to modulation ground.Further, for circuit to modulate as ground, its reference ground electricity Modulated signal MGND that position is loaded by modulation；For the circuit with equipment as ground, its ground reference is equipment ground institute Ground signalling GND of loading.

In the present embodiment, described control unit 30, the scan drive circuit 21, the data selection circuit 24, The reference signal generation circuit 23, and sensing unit 11 be for example arranged in domain 70.The sensing drive circuit 22 is for example A part is located in domain 60, and a part is located in domain 70.The main control chip 5, the modulation circuit 33, the voltage produce electricity Road 34 is located in domain 60.

So, ground is changed, the present invention does not limit to division of the foregoing circuit in domain 60,70, and manufacturer can be according to actual need Will, for example circuit conditions are different, and correspondence does different adjustment etc..

The bio information sensing device 1 can further include that earth lead G, the earth lead G surround the plurality of sensing Unit 11 is arranged, and in some embodiments, the earth lead G is latticed, is located at same layer with the sensing electrode 111, Arrange around the sensing electrode 111 respectively.Ground is changed, the earth lead G is alternatively in the plurality of sensing unit 11 It is also possible that periphery arranges a circle etc..

In addition, when the bio information sensing device 1 be with domain as voltage reference, the domain be to be grounded letter During domain on the basis of number GND, first reference signal and/or second reference signal are, for example, relatively described ground signalling GND is constant voltage signal.So, when the bio information sensing device 1 is with two domains 60 and 70 as voltage reference When, first reference signal and/or second reference signal are, for example, the voltage that relatively described ground signalling GND is change Signal, is constant voltage signal with respect to modulated signal MGND.

Further, except above by the technical scheme for adopting modulation ground, modulation power source end or reference may also be employed The power supply voltage signal of power supply, carrys out drive circuit 20 described in uniform modulation and exports to the signal of the plurality of sensing unit 11.

Although embodiment is described already in connection with specific configuration and the sequence of operation here, it should be appreciated that, replace The embodiment in generation can increase, omit or change element, operation etc..Therefore, embodiment disclosed herein is meant to be real Apply example rather than restriction.

Claims

1. a kind of capacitance type sensor, including：

First insulating barrier, is formed in the sensing electrode, and leading to sensing electrode is provided through on first insulating barrier Hole；With

Passivation layer, is formed on the sensing circuit.

2. capacitance type sensor according to claim 1, it is characterised in that：The first surface is used to receive target object Touch or be close to input, the sensing electrode is capacitively coupled to target object.

3. capacitance type sensor according to claim 1, it is characterised in that：The first surface is closer compared with second surface Target object.

4. capacitance type sensor according to claim 1, it is characterised in that：The sensing electrode is formed directly into described exhausted On edge substrate.

5. capacitance type sensor according to claim 1, it is characterised in that：The sensing electrode partly or entirely covers institute State the sensing circuit.

6. capacitance type sensor according to claim 1, it is characterised in that：The sensing circuit includes that the first control is opened Close, be connected with the sensing electrode, first controlling switch is used to control whether that transmitting pumping signal performs to sensing electrode Sensing operation.

7. capacitance type sensor according to claim 6, it is characterised in that：The sensing circuit further includes the second control System switch, is connected with the sensing electrode, and second controlling switch is used to control whether to transmit one first reference signal to sense Electrode is surveyed, for same sensing unit, first controlling switch and the second controlling switch alternate conduction.

8. capacitance type sensor according to claim 7, it is characterised in that：First controlling switch and the described second control System switch is thin film transistor switch.

9. the capacitance type sensor according to any one in claim 1-8, it is characterised in that：The insulated substrate is glass Glass substrate, the sensing circuit are to be formed on the glass substrate by thin film transistor (TFT) technique.

10. capacitance type sensor according to claim 1, it is characterised in that：The capacitance type sensor is self-capacitance Fingerprint sensor.

11. capacitance type sensors according to claim 8, it is characterised in that：The capacitance type sensor is further included Scan drive circuit, is formed on the second surface of the insulated substrate, and with each sensing unit in the first controlling switch with Second controlling switch connects respectively, for driving the first controlling switch in each sensing unit to lead with the second controlling switch timesharing It is logical；For same row sensing unit：When the sensing electrode of a sensing unit receives excitation by the first controlling switch for turning on During signal, correspondence performs sensing operation, and the sensing electrode in remaining sensing unit receives institute by the second controlling switch of conducting State the first reference signal.

12. capacitance type sensors according to claim 11, it is characterised in that：The plurality of sensing unit is arranged in array Cloth, the conducting of the first controlling switch, the cut-off of the second controlling switch in the scan drive circuit drives a line sensing unit Meanwhile, the cut-off of the first controlling switch, the conducting of the second controlling switch in driving remaining row sensing unit.

13. capacitance type sensors according to claim 11, it is characterised in that：The scan drive circuit is driven by row and is passed Sense unit performs sensing operation.

14. capacitance type sensors according to claim 11, it is characterised in that：The capacitance type sensor is further included Data selection circuit, is formed on the second surface of the insulated substrate, the data selection circuit and each sensing unit Connection, for selecting to export the pumping signal or one second reference signal to corresponding sensing electrode.

15. capacitance type sensors according to claim 14, it is characterised in that：The data selection circuit includes many numbers According to selector, each data selector connects at least two row sensing units, and the data selector is believed for timesharing output drive Number to each row sensing unit for being connected, and when export the pumping signal to wherein string by the first controlling switch of conducting During sensing unit, further export what second reference signal was connected to remaining several row by the first controlling switch for turning on Sensing unit.

16. capacitance type sensors according to claim 15, it is characterised in that：The data selector is believed in output drive Number to sensing electrode perform sensing operation while, further the sensing signal from the sensing electrode is exported.

17. capacitance type sensors according to claim 15, it is characterised in that：The capacitance type sensor is further included Multiple scan line groups and multiple data wire groups, are both formed in the second surface side of the insulated substrate；Wherein, it is described many Individual scan line group is connected with the scan drive circuit, further connects a line sensing unit per scan line group；It is described Multiple data wire groups are connected with the data selection circuit, and each data wire group further connects string sensing unit；Often Scan line group includes the first scan line and the second scan line, and first scan line connects the first control of a line sensing unit System switch, second scan line are used for second controlling switch of the connection with a line sensing unit；Each data wire group includes First data wire and the second data wire, the first controlling switch of the first data wire connection string sensing unit, described second Data wire connects the second controlling switch of same row sensing unit.

18. capacitance type sensors according to claim 17, it is characterised in that：The first of the plurality of scan line group is swept Retouch line and the second scan line to extend along line direction, and arrange along column direction；First data wire of the plurality of data wire group and Second data wire extends along column direction, and arranges along line direction.

19. capacitance type sensors according to claim 17, it is characterised in that：When the scan drive circuit drives a line When the first controlling switch conducting in sensing unit, the second controlling switch are ended, by the first data wire and the first control of conducting System switch, the plurality of data selector simultaneously export the pumping signal every time to a sensing electrode, and export described the Two reference signals give remaining sensing electrode.

20. capacitance type sensors according to claim 19, it is characterised in that：The capacitance type sensor is further included First reference signal line and the second reference signal line, are both formed in the second surface side of the insulated substrate, wherein, described One reference signal line is connected with the second data wire in each data wire group, second reference signal line and the plurality of data Selector connects, first reference signal line and second reference signal be respectively used to transmission first reference signal and Second reference signal；For at least two row sensing units being connected with same data selector：When the data are selected When device transmits the pumping signal to the wherein sensing electrode of string sensing unit, described the on the second reference signal line is transmitted Sensing electrode of two reference signals to other row sensing units；For same row sensing unit：When the sense of a wherein sensing unit When survey electrode receives the pumping signal, the sensing electrode of remaining sensing unit is received on first reference signal line First reference signal.

21. capacitance type sensors according to claim 14, it is characterised in that：First reference signal and described second Reference signal is identical.

22. capacitance type sensors according to claim 21, it is characterised in that：First reference signal and the excitation Signal is identical.

A kind of 23. capacitance-type sensing devices, the capacitance-type sensing device include capacitance type sensor and control chip, the control Signal transmission is carried out between coremaking piece and the capacitance type sensor, wherein, the capacitance type sensor is claim 1-22 Capacitive sensing sensor described in middle any one, the control chip are bundled on the second surface of the insulated substrate, or Person, the control chip are arranged on a flexible circuit board, and the flexible circuit board is connected with the second surface of the insulated substrate Connect, and electrically connect with the plurality of sensing unit.

24. capacitance-type sensing devices according to claim 23, it is characterised in that：The control chip includes reference voltage Circuit and sensing drive circuit are produced, the reference signal generation circuit is used to provide the first reference signal or/and the second reference Signal to the sensing electrode, the sensing drive circuit to be used to provide pumping signal to the sensing electrode, drive sensing electricity Pole performs sensing operation.

25. capacitance-type sensing devices according to claim 23, it is characterised in that：When the control chip passes through soft electricity When road plate is connected with the capacitance type sensor, the capacitance-type sensing device further includes reinforcing plate, and the reinforcing plate is led to Cross bonding piece to be attached on the passivation layer and the flexible circuit board.

26. a kind of electronic equipment, including the capacitance-type sensing device in claim 23-25 described in any one.