WO2018027594A1

WO2018027594A1 - Capacitive sensing device and electronic apparatus

Info

Publication number: WO2018027594A1
Application number: PCT/CN2016/094245
Authority: WO
Inventors: 李问杰
Original assignee: 深圳信炜科技有限公司
Priority date: 2016-08-09
Filing date: 2016-08-09
Publication date: 2018-02-15
Also published as: CN106462308A; CN106462308B

Abstract

A capacitive sensing device and an electronic apparatus. The capacitive sensing device comprises a plurality of sensing units (11) and a driving circuit (20). Each of the sensing units (11) comprises: a sensing electrode (111); a first control switch (113) connected to the sensing electrode (111); and a second control switch (115) connected to the first control switch (113). The driving circuit (20) is separately connected to the first control switches (113) and second control switches (115) of the plurality of sensing units (11) to turn on, at different times, the first control switches (113) and second control switches (115) of the plurality of sensing units (11), transmits, via the turned-on first control switches (113) and to the sensing electrode (111), an excitation signal to perform a sensing operation, and transmits, via the turned-on second control switches (115) and to the sensing electrode (111), a first reference signal.

Description

Capacitive sensing devices and electronic devices

Technical field

The present invention relates to the field of sensing technologies, and in particular, to a capacitive sensing device and an electronic device having the capacitive sensing device.

Background technique

With the development of society, more and more electronic devices (such as mobile phones, tablets, wearable devices, and smart homes) generally have one or more sensing devices. The sensing device includes a touch sensing device such as a user touch operation, a biological information sensing device that senses biological information of the human body, and the like. At present, a touch sensing device, a biological information sensing device, and the like mostly employ a capacitive sensing device to perform a sensing operation.

Taking a biological information sensing device as an example, generally, the biological information sensing device includes a plurality of sensing electrodes arranged in an array and a driving circuit connected to each sensing electrode. The drive circuit typically drives the sensing electrodes row by row to perform biometric information sensing.

However, when the driving circuit performs the biological information sensing every time the partial sensing electrodes are driven, the voltages on the remaining sensing electrodes may be inconsistent due to the influence of signal interference, etc., and thus the sensing of the biological information sensing is performed. The parasitic effects of the electrodes are different and are unknown, and the biological information sensing device requires relatively high sensing accuracy, which is not conducive to accurate detection of biological information.

Summary of the invention

The present invention aims to solve at least one of the technical problems existing in the prior art. To this end, the present invention needs to provide a capacitive sensing device and an electronic device.

The invention provides a capacitive sensing device comprising:

A plurality of sensing units, each sensing unit comprising:

Sense electrode

a first control switch connected to the sensing electrode; and

a second control switch connected to the sensing electrode; and

a driving circuit is respectively connected to the first control switch and the second control switch of the plurality of sensing units for controlling the first control switch and the second control switch in the same sensing unit to be turned on and off, and is turned on The first control switch transmits an excitation signal to the sensing electrode to perform a sensing operation, and transmits a first reference signal to the sensing electrode through the second control switch that is turned on.

Optionally, the first reference signal is the same as the excitation signal.

Optionally, for the same column of sensing electrodes:

When the driving circuit drives the first control switch of one of the sensing units to be turned on and the second control switch is turned off, driving the first control switch of some or all of the remaining sensing units to be turned off, the second control The switch is turned on.

Optionally, the driving circuit provides the excitation signal to the sensing electrode to perform biometric information sensing through the turned-on first control switch, and receives the sensing signal from the sensing electrode output to perform a self-capacitance sense Test operation.

Optionally, the driving circuit includes a scan driving circuit, a sensing driving circuit, and a reference signal generating circuit, wherein the scan driving circuit is configured to drive the first control switch and the second control switch to be turned on. And a cut-off, the sensing driving circuit is configured to perform a sensing operation by driving the sensing electrode through the turned-on first control switch, the reference signal generating circuit configured to provide the second reference through the turned-on second control switch Signal to the sensing electrode.

Optionally, when the scan driving circuit drives the first control switch of the row of sensing units to be turned on and the second control switch is turned off, the sensing driving circuit simultaneously provides the excitation signal through the first control switch that is turned on. A sensing operation is performed on a portion of the sensing electrodes, the reference signal generating circuit further providing the same second reference signal to the sensing electrodes of some or all of the remaining sensing units through the turned-on first control switch.

Optionally, the second reference signal is the same as the first reference signal.

Optionally, for the sensing electrodes of the same row: the driving circuit performs a sensing operation by driving a portion of the sensing electrodes at the same time, and driving by a plurality of times until the sensing electrodes are driven to perform a sensing operation.

Optionally, the driving circuit further includes a plurality of data selectors, the plurality of data selectors are connected to the reference signal generating circuit and the sensing driving circuit, and each data selector is further connected by a first control switch a sensing electrode of a portion of the sensing unit, the data selector for selectively outputting the excitation signal or the second reference signal to the sensing electrode.

Optionally, the driving circuit simultaneously outputs the excitation signal to each of the sensing electrodes through the data selectors, and respectively outputs the second reference signals to the rest of the same row through the data selectors. Some or all of the sensing electrodes are sensed.

Optionally, the capacitive sensing device further includes a control unit, and the control unit is respectively connected to the scan driving circuit and the plurality of data selectors for controlling the scan driving circuit to drive each row of sensing units And a turn-on timing of the first control switch and the second control switch, and controlling a timing of outputting the excitation signal and the second reference signal to the sensing electrode by controlling the plurality of data selectors.

Optionally, the capacitive sensing device further includes:

a plurality of scan line groups, the scan line group including a first scan line and a second scan line; and

a plurality of data line groups, the data line group including a first data line and a second data line;

Each scan line group is connected to one row of sensing units, and each data line group is connected to one column of sensing units;

The first control switch includes a control electrode, a first transfer electrode, and a second transfer electrode; the second control switch includes a control electrode, a first transfer electrode, and a second transfer electrode; the first scan line connection a scan driving circuit and a control electrode of the first control switch; the second scan line connecting the scan driving circuit and the control electrode of the second control switch; the first data line connecting the data selector And a first transmission electrode of the first control switch; the second data line is connected to the first transmission electrode of the reference signal generation circuit and the second control switch; and the second transmission electrode of the first control switch is connected to the sense a measuring electrode; a second transmitting electrode of the second control switch is connected to the sensing electrode.

Optionally, the first data line is used to transmit the excitation signal and the second reference signal, and the second data line is used to transmit the first reference signal, and the scan driving circuit passes the a scan line and a second scan line provide a scan enable signal to the first control switch and the second control switch to control the first control switch and the second control switch to be turned on, and are provided by the first scan line and the second scan line The scan cutoff signal is applied to the first control switch and the second control switch to control the first control switch and the second control switch to be turned off.

Optionally, the capacitive sensing device further includes:

a first reference signal line connecting the reference signal generating circuit and the second data line, for transmitting the first reference signal;

a second reference signal line connecting the reference signal generating circuit and the plurality of data selectors for transmitting the second reference signal; and

And a sensing signal line connecting the sensing driving circuit and the plurality of data selectors for transmitting the excitation signal to the sensing electrode and transmitting the sensing signal from the sensing electrode to the sensing driving circuit.

Optionally, the capacitive sensing device includes a capacitive sensor, the capacitive sensor includes an insulating substrate, the plurality of sensing units, the plurality of scan line groups, and the plurality of data line groups And the first reference signal line, the plurality of sensing units, the plurality of scan line groups, the plurality of data line groups, and the first reference signal line are formed on the insulating substrate on.

Optionally, the first control switch and the second control switch in each of the sensing units are thin film transistor switches, and the insulating substrate is a glass substrate.

Optionally, the sensing unit includes a first control switch and a second control switch, or the sensing unit includes two first control switches connected in parallel and two second control switches connected in parallel.

Optionally, the insulating substrate includes a first surface and a second surface disposed opposite to the first surface, the first surface is configured to receive a touch or proximity input of the target object, the plurality of sensing units, the A plurality of scan line groups, the plurality of data line groups, and the first reference signal line are disposed on the second surface.

Optionally, the sensing electrodes of the plurality of sensing units are compared to the first control switch, the second A control switch, the plurality of scan line groups, and the plurality of data line groups are closer to the second surface.

Optionally, the first control switch, the second control switch, the plurality of scan line groups, and the plurality of data line groups are located opposite to the sensing electrodes of the plurality of sensing units One side of the insulating substrate.

Optionally, the sensing electrodes of the plurality of sensing units cover the first control switch, the second control switch, the plurality of scan line groups, and the plurality of data line groups.

Optionally, the capacitive sensor further includes the scan driving circuit, the plurality of data selectors, the second reference signal line, and the sensing signal line, the scan driving circuit, the multiple The data selector, the second reference signal line, and the sensing signal line are formed on the second surface of the insulating substrate.

Optionally, the scan driving circuit, the plurality of data selectors, the second reference signal line, and the sensing signal line are disposed around the plurality of sensing units.

Optionally, the scan driving circuit and the plurality of data selectors each include a control switch, and the control switches are all thin film transistor switches.

Optionally, each data selector comprises a plurality of switch units, each switch unit comprising a first selection switch and a second selection switch, the first selection switch comprising a control electrode, a first transfer electrode, and a second transfer electrode The second selection switch includes a control electrode, a first transmission electrode, and a second transmission electrode, wherein the control electrode of the first selection switch and the control electrode of the second selection switch are respectively connected to the control unit, a first transmission electrode of the first selection switch is connected to the sensing driving circuit, a first transmission electrode of the second selection switch is connected to the reference signal generating circuit, and a second transmission electrode of the first selection switch And connected to the second transmission electrode of the second selection switch and connected to the first data line.

Optionally, the control unit controls the first selection switch and the second selection switch of the same switching unit to be turned on in time.

Optionally, the capacitive sensor further includes a passivation layer formed on the plurality of sensing units, the plurality of scan line groups, the plurality of data line groups, and the first reference signal on-line.

Optionally, the capacitive sensing device further includes a control chip, the control chip including the control unit, the reference signal generating circuit, and the sensing driving circuit.

Optionally, the capacitive sensor and the control chip are respectively dies, and the control chip is bound on the insulating substrate; or the control chip is disposed on a flexible circuit board, A flexible circuit board is electrically coupled to the capacitive sensor.

Optionally, the driving circuit further includes a modulation circuit, configured to uniformly modulate a signal output by the driving circuit to the plurality of sensing units to improve a signal to noise ratio of the sensing signal.

Optionally, the capacitive sensing device is a fingerprint sensing device.

Since the sensing unit of the capacitive sensing device of the present invention further includes a first control switch and a second control switch, the driving circuit can be turned on and off by controlling the first control switch and the second control switch. To perform a sensing operation by driving the sensing electrode through the turned-on first control switch, further providing a first reference signal to the sensing electrode through the turned-on second control switch, thereby applying the first reference signal The parasitic influence of the sensing electrode pair on performing the sensing electrode is known. Accordingly, the driving circuit can eliminate the known parasitic influence in the process of acquiring the biological information, thereby improving the precision of the sensing operation.

Further, the capacitive sensing device provides a second reference signal to the sensing of part or all of the remaining sensing electrodes of the same row when a part of the sensing electrodes in each row of sensing electrodes are driven to perform a sensing operation. The electrode, such as the pair of sensing electrodes to which the second reference signal is applied, is known to have a parasitic effect on the sensing electrode that is sensed, and accordingly, the driving circuit can eliminate the known parasitic in the process of acquiring biological information. Influence, thereby improving the accuracy of the sensing operation.

The invention further provides an electronic device comprising the capacitive sensing device of any of the above.

Since the electronic device includes the capacitive sensing device, the user experience of the electronic device is high.

DRAWINGS

FIG. 1 is a schematic diagram showing the circuit structure of an embodiment of a biological information sensing apparatus according to the present invention.

Fig. 2 is a plan view showing a part of the structure of the biological information sensing device shown in Fig. 1.

3 is a circuit diagram showing an embodiment of a data selection circuit of the biometric information sensing device shown in FIG. 1.

4 is a schematic structural view of another embodiment of a biological information sensing device of the present invention.

FIG. 5 is a partial cross-sectional structural view of the biological information sensing device shown in FIG. 4. FIG.

Fig. 6 is a view showing a state of use of the biometric information sensing device shown in Fig. 4.

FIG. 7 is a flow chart showing a method of fabricating an embodiment of the biometric information sensor shown in FIG.

8 is a flow chart of a method of making a first control switch and a second control switch.

9 is a partial structural schematic view of still another embodiment of the biological information sensing device of the present invention.

Figure 10 is a plan view showing another embodiment of the sensing unit of the biological information sensing device of the present invention.

11 is a partial structural schematic view of still another embodiment of the biological information sensing device of the present invention.

FIG. 12 is a schematic structural view of an embodiment of an electronic device according to the present invention.

FIG. 13 is a block diagram showing the circuit configuration of an embodiment of the electronic device shown in FIG.

detailed description

The above described objects, features, and advantages of the present invention will be more apparent from the aspects of the invention. However, the example embodiments can be embodied in a variety of forms and should not be construed as being limited to the embodiments set forth herein. To those skilled in the art. The thickness and size of each layer shown in the drawings may be exaggerated, omitted or schematically shown, and the number of related elements may be schematically illustrated for convenience or clarity. In addition, the size of the component does not fully reflect the actual size, and the number of related components does not fully reflect the actual number. The number of identical or similar or related elements shown in different figures may be inconsistent because of the different size of the drawings and the like. The same reference numerals in the drawings denote the same or similar structures. It should be noted that, in order to make the labels have regularity and logic, etc., in some different embodiments, the same or similar elements or structures adopt different reference numerals, according to the technical relevance and related text description. Those skilled in the art can directly or indirectly determine the knowledge.

Furthermore, the described features, structures may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are set forth However, those skilled in the art will appreciate that the technical solution of the present invention can be practiced without one or more of the specific details or other structures, components, and the like. In other instances, well-known structures or operations are not shown or described in detail to avoid obscuring the invention.

Further, the following terms are exemplary and are not intended to be limiting in any way. After reading this application, those skilled in the art will recognize that these terms are applied to techniques, methods, physical elements, and systems (whether or not currently known), including those inferred or inferred by those skilled in the art after reading this application. Expansion.

In the description of the present invention, it is to be understood that “a plurality” includes two or more, and “a plurality of” includes two or more, unless the invention clearly dictates otherwise. “At least two columns” includes various suitable situations in which two columns, three columns, four columns, and five columns are gradually increasing. In addition, the terms “first” and “second” appearing in each component name and signal name are not intended to limit the order in which the components or signals appear, but to facilitate the component and signal naming, to clearly distinguish the components and the signals. Make the description more concise.

It should be further noted that the capacitive sensing device provided by the present invention is suitable for use in a biological information sensing device, particularly a fingerprint sensing device. However, the present invention is not limited thereto, and the capacitive sensing device is also applicable to other suitable types of sensing devices, such as touch sensing devices and the like. The biometric information sensing device is configured to sense predetermined biological information of a target object. The target object, such as a user's finger, may also be other parts of the user's body, such as the palms, toes, ears, etc., or even other suitable types of objects, and is not limited. For the human body. The predetermined biological information is, for example, a fingerprint, a palm print, an ear print, or the like.

Hereinafter, each embodiment of the present invention will be described by taking a capacitive sensing device as a biological information sensing device as an example.

Please refer to FIG. 1 and FIG. 2 together. FIG. 1 is a schematic structural diagram of a circuit of an embodiment of a biological information sensing device according to the present invention. Fig. 2 is a plan view showing a part of the structure of the biological information sensing device shown in Fig. 1. The biometric information sensing device 1 includes a plurality of sensing electrodes 111 and a driving circuit 20. The driving circuit 20 is connected to the plurality of sensing electrodes 111 for driving the plurality of sensing electrodes 111 to perform biometric information sensing.

In general, capacitive sensing devices include mutual capacitive sensing devices and self-capacitive sensing devices.

The biometric information sensing device 1 may be a self-capacitance biological information sensing device or a mutual capacitance biological information sensing device, depending on the cooperation relationship between the driving circuit 20 and the sensing electrode 111.

In the mutual capacitance type biometric information sensing device, the mutual capacitance type biometric information sensing device may include a plurality of driving electrodes and a plurality of sensing electrodes. A mutual capacitance is formed between each of the driving electrodes and a sensing electrode. At the time of sensing, the drive circuit provides an excitation signal to the drive electrode and receives a sensed signal from the sense electrode output. When the target object approaches or touches the biometric information sensing device, the amount of charge formed between the driving electrode and the sensing electrode may change correspondingly, so that the sensing electrode outputs a corresponding sensing signal to Drive the circuit to obtain relevant biological information.

In a self-capacitance-based bioinformation sensing device, the self-capacitance bioinformation sensing device includes a plurality of sensing electrodes. Each sense electrode can form a capacitance to ground. At the time of sensing, the drive circuit provides an excitation signal to the sensing electrode and receives a sensing signal from the sensing electrode output. When the target object approaches or touches the biometric information sensing device, a capacitance is formed between the target object and the sensing electrode, causing a change in the amount of charge on the sensing electrode, so that the sensing electrode outputs a corresponding sensing signal to the driving. Circuits to obtain relevant biological information.

In the present embodiment, the biological information sensing device 1 is, for example, a self-capacitance sensing device.

The plurality of sensing electrodes 111 are arranged in a plurality of rows and columns. However, in other embodiments, the plurality of sensing electrodes 111 may also be arranged in other regular or irregular manners.

For the same column of sensing electrodes 111: when the driving circuit 20 provides an excitation signal to a sensing electrode 111 to perform biometric information sensing, a first reference signal is provided to some or all of the remaining sensing electrodes 111. Electrode 111. Preferably, the driving circuit 20 provides the first reference signal to all the remaining sensing electrodes 111.

When the driving circuit 20 supplies the excitation signal to one of the sensing electrodes 111 of each column, the first reference signal is supplied to the remaining part or all of the sensing electrodes 111, thereby applying The sensing electrode 111 of the first reference signal is known to have a parasitic effect on the sensing electrode 111 that performs biometric sensing, so that the driving circuit 20 can cancel out subsequent calculations of the biological information. The known parasitic effects further improve the sensing accuracy of the biological information.

The first reference signal is for example a constant voltage signal.

Alternatively, the voltage difference between the first reference signal and the excitation signal remains unchanged, for example, the first reference signal is the same as the excitation signal, thereby reducing the remaining sensing electrodes 111 and performing biological information The sensed charge and discharge power of the parasitic capacitance between the sensing electrodes 111 further improves the sensing accuracy of the biological information.

In the present embodiment, the drive circuit 20 drives the sensing electrode 111 row by row to perform biometric information sensing. However, in other embodiments, the driving circuit 20 can simultaneously drive the plurality of rows of sensing electrodes 111 to perform biometric information sensing at a time.

Further, in the present embodiment, for the sensing electrode 111 of the same row: the driving circuit 20 simultaneously provides the excitation signal to the partial sensing electrode 111 to perform biological information sensing, and provides a second reference signal to the rest. Some or all of the sensing electrodes 111 are sensed. Preferably, the second reference signal is provided to all remaining sensing electrodes 111.

For the sensing electrode 111 of the same row: the driving circuit 20 performs biometric information sensing on the partial sensing electrodes 111 by simultaneously supplying the excitation signals a plurality of times, thereby driving the one row of sensing electrodes 111 to perform biometric information sensing.

When the plurality of sensing electrodes 111 are formed on a chip, a time-division driving method for one row of sensing electrodes 111 is employed, thereby reducing the number of pins on the chip, which will be described later.

However, in other embodiments, the driving circuit 20 can simultaneously drive the sensing electrodes 111 of one row to perform biometric information sensing. For example, the plurality of sensing electrodes 111 are formed in a display screen. When the plurality of sensing electrodes 111 are disposed on the chip, the driving circuit 111 is also capable of simultaneously driving one row of sensing electrodes 111 to perform biometric information sensing.

In addition, since the driving circuit 20 provides the excitation signal to the partial sensing electrodes 111 in each row of sensing electrodes 111, the second reference signals are provided to some or all of the remaining sensing electrodes 111. 111, whereby the sensing electrode 111 to which the second reference signal is applied is known to the parasitic influence of the sensing electrode 111 performing the biological information sensing, whereby the driving circuit 20 performs subsequent calculation of the biological information. It can offset the known parasitic effects and improve the sensing accuracy of biological information.

The second reference signal is for example a constant voltage signal.

Alternatively, the voltage difference between the second reference signal and the excitation signal remains unchanged, for example, the second reference signal is the same as the excitation signal, thereby reducing the remaining sensing electrodes 111 and performing biological information The sensed charge and discharge power of the parasitic capacitance between the sensing electrodes 111 further improves the sensing accuracy of the biological information.

In some embodiments, the biometric information sensing device 1 includes a plurality of sensing units 11. Each sensing unit 11 includes a sensing electrode 111, a first control switch 113, and a second control switch 115. The first control switch 113 and the second control switch 115 are both connected to the sensing electrode 111.

The drive circuit 20 includes a scan drive circuit 21, a sense drive circuit 22, and a reference signal generation circuit 23. The scan driving circuit 21 is respectively connected to the first control switch 113 and the second control switch 115 of the plurality of sensing units 11 for driving the first control switch 113 and the second in each sensing unit 11 The control switch 115 is turned on in time. The sensing driving circuit 22 is connected to the sensing electrode 111 through a first control switch 113 in each sensing unit 11 for providing the excitation signal to the sensing electrode 111 by the turned-on first control switch 113. Information sensing. The reference signal generating circuit 23 is connected to the sensing electrode 111 through a second control switch 115 in each sensing unit 11 for providing the first reference signal to the sensing through the turned-on second control switch 115. Electrode 111.

For the sensing electrode 111 of the same column: when the scan driving circuit 21 drives the first control switch 113 in a sensing unit 11 to be turned on, and the second control switch 115 is turned off, driving the remaining portions of the sensing unit 11 or The first control switch 113 of all the sensing units 11 is turned off, the second control switch 115 is turned on, and the reference signal generating circuit 23 supplies the first reference signal to the sensing electrodes 111 through the turned-on second control switch 115.

The sensing driving circuit 22 provides the excitation signal to the sensing electrode 111 to perform biometric information sensing through the turned-on first control switch 113, and receives the sensing signal output from the sensing electrode 111 to acquire biometric information.

Further, when the scan driving circuit 21 drives the first control switch 113 of one row of the sensing unit 11 to be turned on and the second control switch 115 is turned off, the sensing driving circuit 22 passes the first control switch 113 that is turned on at the same time. Providing the excitation signal to the partial sensing electrode 111 to perform biometric information sensing, the reference signal generating circuit 23 providing the second reference signal to a portion of the remaining sensing unit 11 through the turned-on first control switch 113 or All of the sensing electrodes 111 of the sensing unit 11.

In the present embodiment, the drive circuit 20 may further include a data selection circuit 24 that is connected to the sense drive circuit 22 and the reference signal generation circuit 23, respectively. The data selection circuit 24 is further connected to a first control switch 113 in each of the sensing units 11. For each sensing unit 11, the data selection circuit 24 selects whether to output the second reference signal provided by the reference signal generating circuit 23 or output the excitation signal provided by the sensing driving circuit 22 to the sensing electrode. 111. When the data selection circuit 24 outputs the excitation signal to a sensing electrode 111, the sensing signal sensed by the sensing electrode 111 is further output to the driving circuit 20.

Since the drive circuit 20 is provided with the data selection circuit 24, it is possible to perform time-division biometric sensing on the sensing electrodes 111 of each row.

In an embodiment, the data selection circuit 24 includes a plurality of data selectors (Multiplexer) 241. Each of the data selectors 241 is connected to the partial sensing unit 11, and is further connected to the reference signal generating circuit 23 and the sensing driving circuit 22, respectively. The plurality of data selectors 241 are configured to selectively output the excitation signal or the second reference signal to the sensing electrode 111. Optionally, each data selector 241 is coupled to at least two columns of sensing units 11.

The driving circuit 20 outputs the excitation signal to the sensing electrode 111 to perform biometric information sensing by using the data selector 241, and outputs the second reference signal to the same row through each data selector 241. Some or all of the remaining sensing electrodes 111 sense the electrodes 111.

The driving circuit 20 drives the row of sensing electrodes 111 to perform biometric information sensing by sequentially outputting the excitation signals to the sensing electrodes 111 through the data selectors 241 and the first control switches 113 that are turned on.

Alternatively, in other embodiments, the data selection circuit 24 may be other suitable circuit configurations and is not limited to the plurality of data selectors 241 described herein. In addition, when the driving circuit 20 simultaneously supplies the excitation signal to the sensing electrodes 111 of each row, the data selection circuit 24 may also be omitted.

The drive circuit 20 can further include a control unit 30. The control unit 30 is connected to the scan driving circuit 21 and the plurality of data selectors 241, respectively, for controlling the scan driving circuit 21 to drive the first control switch 113 and the second control in each row sensing unit 11. The turn-on timing of the switch 115 and the timing of outputting the excitation signal and the second reference signal to the sensing electrode 111 by controlling the plurality of data selectors 241.

For example, the control unit 30 controls the scan driving circuit 21 to turn on the first control switch 113 row by row, and control a part of the remaining rows or when the first control switch 113 of each row sensing unit 11 is turned on. The second control switch 115 of the sensing unit 11 of all rows is turned on. For the same sensing unit 11 : the control unit 30 controls the scan driving circuit 21 to turn on the first control switch 113 and the second control switch 115 in a time-sharing manner.

The control unit 30 controls the data selector 241 to time-output the excitation signal to the respective sensing units 11 connected to the data selector 241.

In some embodiments, the biometric information sensing device 1 further includes, for example, a plurality of scan line groups B and a plurality of data line groups D. Each scan line group B is connected to a row of sensing units 11, and each data line group D is connected to a column of sensing units 11.

Specifically, each scan line group B includes a first scan line B1 and a second scan line B2. Each data line group D includes a first data line D1 and a second data line D2.

The first control switch 113 includes a control electrode G1, a first transfer electrode S11, and a second transfer electrode S12. The second control switch 115 includes a control electrode G2, a first transmission electrode S21, and a second The electrode S22 is transferred. The first scan line B1 is connected to the scan driving circuit 21 and the control electrode G1 of the first control switch 113. The second scan line B2 is connected to the scan driving circuit 21 and the control electrode G2 of the second control switch 115. The first data line D1 is connected to the data selector 241 and the first transfer electrode S11 of the first control switch 113. The second data line D2 is connected to the first transmission electrode S21 of the reference signal generating circuit 23 and the second control switch 115. The second transfer electrode S12 of the first control switch 113 is connected to the sensing electrode 111. The second transfer electrode S22 of the second control switch 115 is connected to the sensing electrode 111.

The first data line D1 is for transmitting the excitation signal and the second reference signal, the second data line D2 is for transmitting the first reference signal, and the scan driving circuit 21 passes the first The scan line B1 and the second scan line B2 provide a scan enable signal to the first control switch 113 and the second control switch 115 to control the first control switch 113 and the second control switch 115 to be turned on, through the first scan line B1. The second scan line B2 provides a scan cutoff signal to the first control switch 113 and the second control switch 115 to control the first control switch 113 and the second control switch 115 to be turned off.

The first scan line B1 and the second scan line B2 both extend in the row direction and are arranged in the column direction. The first data line D1 and the second data line D2 both extend in the column direction and are arranged in the row direction.

In some embodiments, the biometric information sensing device 1 further includes, for example, a first reference signal line R1, a second reference signal line R2, and a sensing signal line L. The first reference signal line R1 is connected to the reference signal generating circuit 23 and the second data line D2 for transmitting the first reference signal. The second reference signal line R2 is connected to the reference signal generating circuit 23 and the plurality of data selectors 241 for transmitting the second reference signal. The sensing signal line L is connected to the sensing driving circuit 22 and the plurality of data selectors 241 for transmitting the excitation signal to the sensing electrode 111 and transmitting the sensing signal from the sensing electrode 11 to the sense The drive circuit 22 is measured.

The first reference signal line R1, the second reference signal line R2, and the sensing signal line L extend mainly in the row direction.

Please refer to FIG. 3. FIG. 3 is a schematic diagram showing the circuit structure of an embodiment of the data selector 241 shown in FIG. The data selector 241 includes eight switch units 243, each of which includes a first selection switch S1 and a second selection switch S2. The first selection switch S1 includes a control electrode G3, a first transfer electrode S31, and a second transfer electrode S32. The second selection switch S2 includes a control electrode G4, a first transfer electrode S41, and a second transfer electrode S42. The control unit 30 is connected to the control electrode G3 and the control electrode G4 in each of the switching units 243, respectively. The first transfer electrode S31 is connected to the sensing drive circuit 22. The first transfer electrode S41 is connected to the reference signal generating circuit 23. The second transfer electrode S32 and the second transfer electrode S42 in each of the switching units 243 are connected and connected to the first transfer electrode S11 of the first control switch 113.

For the same switch unit 243: the control unit 30 controls the first selection switch S1 and the second selection switch S2 to be turned on, that is, when the first selection switch S1 is turned on, the second selection switch S2 is turned off. When the second selection switch S2 is turned on, the first selection switch S1 is turned off. For the same data selector 241: when the control unit 30 controls the first selection switch S1 of a switching unit 243 to be turned on and the second selection switch S2 to be turned off, the first selection switch S1 of the remaining switching units 243 is controlled to be turned off, The second selection switch S2 is turned on. The sensing drive circuit 22 supplies the excitation signal to the sensing electrode 111 of the sensing unit 11 that is turned on by the first control switch 113 through the first selection switch S1 that is turned on; the second selection switch S2 that is turned on The reference signal generating circuit 23 supplies the second reference signal to the sensing electrode 111 of the sensing unit 11 that is turned on by the second control switch 115.

In the present embodiment, the number of the plurality of data selectors 241 is, for example, sixteen, and each of the data selectors 241 includes eight switching units 243. Correspondingly, the number of sensing electrodes 111 in the same row is 128.

It should be noted that, in FIG. 1, limited to the size of the drawing, FIG. 1 only shows that each data selector 241 is respectively connected to the two columns of sensing units 11, if the data selector 241 shown in FIG. Corresponding to the structure, FIG. 1 actually omits the structure in which each data selector 241 is also connected to the other six columns of sensing units 11. Further, the configuration of FIG. 4 to be described later corresponds to the configuration shown in FIG. 1, and the configuration in which each of the data selectors 241 is further connected to the other six columns of sensing units 11 is also omitted, and the description will be made here.

Correspondingly, the driving circuit 20 simultaneously outputs 16 excitation signals to the 16 sensing electrodes 111 of the same row through the 16 data selectors 241, and simultaneously outputs 112 second reference signals to the same 112 sensing electrodes 111 of the row.

Taking the biometric information sensing device 1 as a fingerprint sensing device as an example, when the finger of the user approaches or touches the sensing electrode 111 of the plurality of sensing units 11, the distance between the ridge and the valley and the sensing electrode 111 is Differently, therefore, the capacitances respectively formed by the ridges, valleys and the sensing electrodes 111 are different, so that the influence on the amount of charge on the sensing electrodes 111 is different, so that the driving circuit 20 can output the sensing signals according to the sensing electrodes 111. The corresponding fingerprint information can be obtained.

The working principle of an embodiment of the biological information sensing device 1 is as follows.

The control unit 30 controls the first selection switch S1 of one of the switch units 243 of each of the data selectors 241 to be turned on, the second selection switch S2 to be turned off, and controls the first of the remaining switch units 243 of the respective data selectors 241. The selection switch S1 is turned off, and the second selection switch S2 is turned on. Accordingly, the sensing driving circuit 22 supplies the excitation signal to the first data line D1 through the first selection switch S1 turned on in each of the data selectors 241. The reference signal generating circuit 23 supplies the second reference signal to the first data line D1 through the second selection switch S2 that is turned on in each of the data selectors 241. The first selection switch of each of the switching units 243 in each of the data selectors 241 is controlled by the control unit 30 multiple times. S1 is turned on in time.

The control unit 30 controls the scan driving circuit 21 to drive the first control switch 113 to be turned on, the second control switch 115 is turned off, and the first control switch 113 that controls each row is turned on, and the second control switch 115 is turned off. At the same time, the first control switch 113 that controls the remaining rows is turned off, and the second control switch 115 is turned on. Accordingly, the excitation signal on the first data line D1 is output to the sensing electrode through the turned-on first control switch 113. 111, and receiving a sensing signal output from the sensing electrode 111 to perform biometric information sensing, the second reference signal on the first data line D1 being output to the sensing electrode 111 through the turned-on first control switch 113 In addition, the reference signal generating circuit 23 supplies the first reference signal to the sensing electrode 111 through the turned-on second control switch 115.

The biometric information of the biometric information sensing device 1 is improved by providing the first reference signal and the second reference signal to the remaining corresponding sensing electrodes 111 when performing the biometric information sensing on each of the driving portion sensing electrodes 111. Sensing accuracy.

Please refer to FIG. 1 and FIG. 4 to FIG. 6. FIG. 4 is a schematic structural diagram of another embodiment of the biological information sensing device of the present invention. FIG. 5 is a partial cross-sectional structural view of the biological information sensing device shown in FIG. 4. FIG. Fig. 6 is a view showing a state of use of the biological information sensing device of Fig. 4; The biological information sensing device 1 includes a biological information sensor 2. The biometric information sensor 2 includes an insulating substrate 2a, the plurality of sensing units 11, the plurality of scanning line groups B, the plurality of data line groups D, and the first reference signal line R1. The plurality of sensing units 11, the plurality of scanning line groups B, the plurality of data line groups D, and the first reference signal lines R1 are formed on the insulating substrate 2a.

In the present embodiment, the first control switch 113 and the second control switch 115 in each of the sensing units 11 are, for example, thin film transistor (TFT) switches, and the insulating substrate 2a is, for example, a glass substrate. Thereby, the biometric information sensor 2 is fabricated by a process of forming a TFT switch on a glass substrate, thereby reducing the manufacturing cost of the biometric information sensor 2 and the bioinformation sensor 2. When the first control switch 113 and the second control switch 115 are thin film transistor switches, the control electrodes G1 and G2 are gates, the first transmission electrodes S11 and S21 are sources, and the second transmission electrode is S12 and S22 are drains.

However, the present invention does not limit the insulating substrate 2a to a glass substrate, and may be other suitable types of insulating substrates. Similarly, the first control switch 113 and the second control switch 115 are not limited to thin film transistors. The switch can also be other suitable types of switches.

The thin film transistor switch is, for example, a suitable type of thin film transistor switch such as a low temperature polysilicon (LTPS) thin film transistor switch, an indium gallium zinc oxide (IGZO) thin film transistor switch, an amorphous silicon thin film transistor switch, or the like. Preferably, the thin film transistor switch is a low temperature polysilicon thin film transistor switch.

The insulating substrate 2a includes a first surface A1 and a second surface disposed opposite to the first surface A1 A2, the first surface A1 is configured to receive a touch or proximity input of a target object, the plurality of sensing units 11, the plurality of scan line groups B, the plurality of data line groups D, and The first reference signal line R1 is disposed on the second surface A2.

The sensing electrodes 111 of the plurality of sensing units 11 are compared to the first control switch 113, the second control switch 113, the plurality of scan line groups B, and the plurality of data line groups Group D is closer to the second surface A2.

The first control switch 113, the second control switch 115, the plurality of scan line groups B, and the plurality of data line groups D are located at the sensing electrodes 111 of the plurality of sensing units 11 The side facing away from the insulating substrate 2a.

Preferably, the sensing electrodes 111 of the plurality of sensing units 11 cover the first control switch 113, the second control switch 115, the plurality of scan line groups B, and the plurality of data Line group D.

The biometric information sensor 1 further includes a passivation layer 16 disposed on the plurality of sensing units 11, the plurality of scan line groups B, the plurality of data line groups D, And the first reference signal line R1.

The passivation layer 16 is used to planarize the surface of the biometric information sensor 2 and to protect components such as the plurality of sensing units 11 .

Referring to FIG. 5 and FIG. 7, FIG. 7 is a flowchart of a method for fabricating an embodiment of the biometric information sensor 2. The method of manufacturing the biometric information sensor 2 is as follows.

F1: providing an insulating substrate 2a;

The insulating substrate 2a is, for example, a glass substrate.

F2: forming the plurality of sensing electrodes 111 on the insulating substrate 2a;

The sensing electrode 111 is made of, for example, a metal material. However, the sensing electrode 111 may also be made of other suitable conductive materials. For example, the sensing electrode 111 may also be made of a transparent conductive material, such as indium oxide. Tin, indium zinc oxide, and the like. In addition, the sensing electrode may also be made of an alloy material such as molybdenum, lithium or molybdenum.

F3: forming a first insulating layer 12 on the plurality of sensing electrodes 111;

The first insulating layer 12 is made of, for example, a material such as silicon oxide or silicon nitride.

F4: forming a first control switch 113 and a second control switch 115 on the first insulating layer 12, and forming a through hole H penetrating through the sensing electrode 111 on the first insulating layer 12, through the through hole a hole H, a first control switch 113 and a second control switch 115 are connected to the sensing electrode 111;

The first control switch 113 and the second control switch 115 of each sensing unit 11 are formed above the sensing electrodes 111 and are respectively connected to the sensing electrodes 111 through the through holes H.

F5: forming a passivation layer 16 on the first control switch 113 and the second control switch 115.

The biometric information sensor 2 is completed. It should be noted that, in the above-described manufacturing method, the steps of forming the plurality of scanning line groups B, the plurality of data line groups D, and the first reference signal line R1 are omitted.

Since the manufacturing process of the biometric information sensor 2 formed according to the above manufacturing method is simple, it is not necessary to additionally provide a protective cover or a coating layer (Coating layer), thereby saving manufacturing costs.

Alternatively, in other embodiments, the biometric information sensor 2 may be formed by forming a first control switch 113 and a second control switch 115 of each sensing unit 11 on the insulating substrate 2a. Forming a first insulating layer 12 on the first control switch 113 and the second control switch 115, and forming a second transfer electrode and a second control switch 115 penetrating the first control switch 113 on the first insulating layer 12 a through hole H of the second transfer electrode S22, and then forming the first control switch 113 connecting the sensing units 11 and the sensing electrode 111 on the second control switch 115 on the first insulating layer 12. Next, a protective cover is provided on the sensing electrode 111 or a coating layer (Coating layer) is formed. This is also possible. It should be noted that the description of the steps of the plurality of scan line groups B, the plurality of data line groups D, and the first reference signal line R1 is also omitted herein.

Referring to FIG. 5, and referring to FIG. 8, FIG. 8 is a flowchart of a method for fabricating the first control switch 113 and the second control switch 115. Taking the first control switch 113 and the second control switch 115 as amorphous silicon thin film transistors as an example, a method of manufacturing the first control switch 113 and the second control switch 115 in the process of fabricating the biological information sensor 2 will be described below.

F41: forming a control electrode G1 of the first control switch 113 and a control electrode G2 of the second control switch 115 on the first insulating layer 12;

F42: forming a second insulating layer 13 on the first insulating layer 12, the control electrodes G1, G2;

The second insulating layer 13 is made of, for example, a material such as silicon oxide or silicon nitride.

F43: forming active layers 14, 15 on the second insulating layer 13;

The active layers 14, 15 are amorphous silicon layers.

F44: forming a through hole H penetrating the sensing electrode 111 on the second insulating layer 13 and the first insulating layer 12;

It should be noted that step F4 and step F5 may be combined and implemented in the same step, but may be formed in two different steps.

F45: forming a first transfer electrode S11 and a second transfer electrode S12 of the first control switch 113, forming a first transfer electrode S21 and a second transfer electrode S22 of the second control switch 115 on the second insulating layer 13, and The second transfer electrode S12 and the second transfer electrode S22 are filled with the through holes H to be connected to the sensing electrodes 111, respectively.

The first transfer electrode S11 and the second transfer electrode S12 are located on both sides of the active layer 14 The first transfer electrode S21 and the second transfer electrode S22 are located on both sides of the active layer 15, thereby forming the first control switch 113 and the second control switch 115.

In the embodiment, the second transfer electrode S12 of the first control switch 113 and the second transfer electrode S22 of the second control switch 115 are respectively connected to the sensing electrode 111 through a through hole H. However, in other embodiments, the second transfer electrode S12 of the first control switch 113 and the second transfer electrode S22 of the second control switch 115 in the same sensing unit 11 can pass through the same through hole H and The sensing electrodes 111 are connected.

In step F5, the second insulating layer 13, the first transfer electrode S11, the active layer 14, the second transfer electrode S12, the first transfer electrode S21, the active layer 15, and the second transfer electrode S22 are formed. Passivation layer 16.

The first control switch 113 and the second control switch 115 formed in the above manufacturing method are mainly Bottom-Gate thin film transistors. However, the first control switch 113 and the second control switch 115 may also be top. A top-gate thin film transistor such as a low temperature polysilicon thin film transistor.

It should be further noted that the plurality of scan line groups B, the plurality of data line groups D, the first reference signal line R1, the first control switch 113, and the second control switch 115 are connected by a connection line. Finally, for example, a peripheral wiring (not shown) formed on the second surface A2 of the insulating substrate 2a is connected by a via or the like to perform signals with a corresponding circuit of the aforementioned driving circuit 20 or a control chip 3 to be described later. transmission.

Optionally, the biometric information sensor 2 further includes the scan driving circuit 21, the plurality of data selectors 241, the second reference signal line R2, and the sensing signal line L. The scan driving circuit 21, the plurality of data selectors 241, the second reference signal line R2, and the sensing signal line L are formed on the second surface A2 of the insulating substrate 2a.

The scan driving circuit 21, the plurality of data selectors 241, the second reference signal line R2, and the sensing signal line L are disposed around the plurality of sensing units 11.

The first selection switch S1 and the second selection switch S2 of the data selector 241 are also, for example, thin film transistor switches. The scan driving circuit 21 generally includes a plurality of control switches (not shown), and the plurality of control switches are, for example, thin film transistor switches. Correspondingly, the plurality of data selectors 241 and the scan driving circuit 21 are formed by the same or similar manufacturing process when the first control switch 113 and the second control switch 115 are formed, thereby improving The integration of the biometric sensor 2 and the reduction in manufacturing costs.

In some embodiments, the biometric information sensing device 1 includes a control chip 3 including the control unit 30, the reference signal generating circuit 23, and the sensing driving circuit 22. That is, a part of the above-mentioned driving circuit 20 is formed in the control chip 3, and a part is formed in the raw The object information sensor 2 is provided such that the integration degree of the biological information sensing device 1 is increased, the volume of the biological information sensing device 1 is reduced, and the manufacturing cost of the biological information sensing device 1 can be reduced.

Optionally, the biometric information sensor 2 and the control chip 3 are respectively, for example, a die, and the control chip 3 is disposed on the insulating substrate 2a, for example, by a flip chip process. When the insulating substrate 2a is, for example, a glass substrate, the control chip 3 is bonded to the glass substrate by, for example, a chip on glass (COG). When the insulating substrate 2a is, for example, a film substrate, the control chip 3 is bonded to the film substrate by, for example, Chip On Film (COF). However, the control chip 3 may also be formed on the insulating substrate 2a by other suitable processes, and is not limited to the flip chip process described herein.

After the control chip 3 is disposed on the insulating substrate 2a of the biometric information sensor, the control chip 3 and the biometric information sensor 1 are placed in a mold, and a package is formed by a molding process. Not shown) on the biometric information sensor 2 and the control chip 3, thereby forming a chip. The package is made of, for example, an epoxy resin material, but is not limited to the epoxy resin material, and may be other suitable materials.

After the biometric information sensing device 1 is formed, the first surface A1 of the insulating substrate 2a is used to receive a proximity or touch input of a target object, or when a user senses a living being using the biometric information sensing device 1 In the information, the first surface A1 is closer to the target object than the second surface A2.

In other embodiments, the scan driving circuit 21, the data selection circuit 24, the second reference signal line R2, and the sensing signal line L may not be disposed on the insulating substrate 2a. For example, the scan driving circuit 21 and the data selection circuit 24 may be disposed in the control chip 3, or may be disposed in another chip, or may exist in a circuit other than the chip.

Please refer to FIG. 9. FIG. 9 is a schematic structural diagram of still another embodiment of the biological information sensing apparatus of the present invention. The biometric information sensing device 1 further includes a connector 4 for connecting the control chip 3 and the biometric information sensor 2. The connecting member 4 is, for example, a Flexible Printed Circuit Board (FPCB). The control chip 3 is disposed, for example, on the flexible circuit board 4, and is connected to the biometric information sensor 2 via the flexible circuit board 4. Signal transmission is performed between the biometric information sensor 2 and the control chip 3 via the flexible circuit board 4.

In this embodiment, the biometric information sensor 2 and the control chip 3 may also be a chip, or the biometric information sensor 2 is a die, the control chip 3 is a chip, or The biometric information sensor 2 and the control chip 3 are both dies.

In each of the above embodiments, when the biometric information sensor 2 is a die or a chip, the data selection circuit 24 is provided to control the time-division output excitation signals to the sensing electrodes 111 of the same row. By Each of the data selectors 241 of the data selection circuit 24 is respectively provided with a port (not shown) connected to the sensing driving circuit 22, and the port is used for transmitting an excitation signal or a sensing signal, and correspondingly A bio-information sensor 2 is provided with a connection pin (not shown) corresponding to each port for connecting the port and the sensing drive circuit 22. In this way, the number of connection pins between the biometric information sensor 2 and the control chip 3 can be reduced.

Alternatively, in other embodiments, for example, the biometric information sensor 2 may be formed in a display screen or on a display screen instead of being integrated into a die or a chip. When the biometric information sensor 2 is formed in a display screen or on a display screen, the control chip 3 can simultaneously drive one row of sensing electrodes 111 to perform biometric information sensing.

Please refer to FIG. 10. FIG. 10 is a schematic structural diagram of another embodiment of a sensing unit according to the present invention. The sensing unit 11 includes two first control switches 113 connected in parallel and two second control switches 115 connected in parallel.

Please refer to FIG. 11. FIG. 11 is a schematic structural diagram of still another embodiment of the biological information sensing apparatus of the present invention. The driving circuit 20 and each of the sensing electrodes 111 are respectively connected by a single data line L1, and the first control switch 113 and the second control switch 115 are omitted. Accordingly, it is also feasible for the drive circuit 20 to output respective signals to the respective sensing electrodes 111.

Please refer to FIG. 12. FIG. 12 is a schematic structural diagram of an embodiment of an electronic device according to the present invention. The electronic device 9 includes the biological information sensing device 1 according to any of the above embodiments. The electronic device 9 is, for example, a portable electronic product, a home-based electronic product, or an in-vehicle electronic product. However, the electronic device is not limited to the electronic products listed herein, but may be other suitable types of electronic products. The portable electronic product is, for example, a mobile terminal, and the mobile terminal is, for example, a mobile terminal, a tablet computer, a notebook computer, a wearable product, or the like. The home-based electronic product is, for example, a smart home door lock, a television, a refrigerator, a desktop computer, and the like. The in-vehicle electronic products are, for example, suitable in-vehicle electronic products such as an in-vehicle display, a driving recorder, a navigator, and a car refrigerator.

Taking the electronic device 9 as a mobile phone as an example, the biological information sensing device 1 is disposed at any suitable position, such as the front side, the side surface, and the back side of the mobile phone, and the biometric information sensing device 1 can be configured as The outer casing of the mobile phone can also be placed inside the mobile phone. In this embodiment, the biometric information sensing device 1 is disposed on the front side of the mobile phone.

Based on the biological information sensed by the biometric information sensing device 1, the electronic device 9 performs, for example, user identity authentication, online payment, a quick launch application (APP), and the like.

Since the electronic device 9 includes the biological information sensing device 1, the sensing accuracy of the biological information sensing device 1 is high, and therefore, the user experience of the electronic device 9 is good.

Please refer to FIG. 13, which is a circuit block diagram of an embodiment of the electronic device shown in FIG. Said The electronic device 9 further comprises a master chip 5. The main control chip 5 is connected to the biometric information sensing device 1 for data communication with the biometric information sensing device 1. The master chip 5 is, for example, a single chip or a chipset. When the master chip 5 is a chipset, the chipset includes an application processor (AP) and a power chip. Additionally, the chipset may further include a memory chip. When the master chip 5 is a single chip, the master chip 5 is, for example, an application processor. Further, the application processor may also be replaced by a central processing unit (CPU).

The main control chip 5 includes a ground terminal 50 connected to the device ground and receiving a ground signal of the device ground. The ground signal is indicated by GND in FIG. The device is also called system ground, for example, the negative pole of the power supply of the electronic device 9, and the power supply is a battery. The ground signal GND is also referred to as a system ground voltage, a system ground signal, a device ground voltage, or a device ground signal. The ground signal GND is a constant voltage. As a voltage reference of each circuit in the electronic device 9, the ground signal GND is, for example, a voltage signal such as 0V (volt), 2V, (-1)V. Typically, the device is not earthy or absolutely earthy. However, when the electronic device 9 is connected to the earth through a conductor, the device ground may also be the earth's earth.

In each of the foregoing embodiments, the biometric information sensing device 1 may be based on a domain as a voltage reference. The domain is a domain based on the ground signal GND. The ground signal GND serves as a voltage reference reference for each circuit in the biological information sensing device 1.

In order to improve the signal-to-noise ratio of the sensing signal of the biometric information sensing device 1, the present invention further proposes a technical aim of improving the signal to noise ratio by using a modulation technical scheme, which is applicable to the living organisms described in the above embodiments. Information sensing device 1.

For example, the signal output to the sensing unit 11 is uniformly modulated by a modulation scheme.

Specifically, the driving circuit 20 further includes, for example, a first ground terminal 31, a second ground terminal 32, a modulation circuit 33, and a voltage generating circuit 34. The modulation circuit 33 is connected between the first ground end 31 and the second ground end 32. The modulation circuit 33 is further connected to the voltage generating circuit 34. The first ground terminal 31 is connected to the device ground. The voltage generating circuit 34 is configured to provide a voltage driving signal to the modulation circuit 33. The modulation circuit 33 correspondingly generates a modulation signal MGND to the second ground terminal 32 according to the voltage driving signal and the ground signal GND on the ground of the device. The modulation signal MGND is used for uniformly modulating a signal output by the driving circuit 20 to the sensing unit 11, for example, the first reference signal, the second reference signal, the excitation signal, and the scanning The turn-on signal, and the scan cutoff signal. Wherein, the ground (for example, the second ground terminal 32) that loads the modulation signal MGND is a modulation ground.

For example, the excitation signal includes a first voltage signal and a second voltage signal. The excitation signal is a square wave pulse signal in which the first voltage signal and the second voltage signal alternate. The first voltage signal is lower than the second voltage signal, and the first voltage signal is, for example, a ground signal GND. Modulation letter The number MGND is used to raise the second voltage signal to improve the signal to noise ratio of the sensing signal.

When the driving circuit 20 receives the sensing signal from the sensing electrode 111, the sensing signal needs to be inversely modulated to acquire corresponding biological information.

In this embodiment, the biometric information sensing device 1 uses two domains as a voltage reference. The two fields are shown as a domain 60 referenced to the ground signal GND and a domain 70 referenced to the modulation signal MGND. The ground terminal of the circuit in the domain 60 with reference to the ground signal GND is directly connected to the device ground, and the ground of the circuit in the domain 70 with reference to the modulation signal MGND is directly connected to the modulation ground. Further, for a circuit grounded in modulation, the reference ground potential is a modulation signal MGND loaded by the modulation ground; and for the circuit grounded by the device ground, the reference ground potential is the ground signal GND loaded by the device ground.

In the present embodiment, the control unit 30, the scan driving circuit 21, the data selection circuit 24, the reference signal generating circuit 23, and the sensing unit 11 are disposed, for example, in the field 70. The sensing drive circuit 22 is, for example, partially located in the domain 60 and partially located in the domain 70. The main control chip 5, the modulation circuit 33, and the voltage generating circuit 34 are located in the domain 60.

However, the present invention is not limited to the division of the above-mentioned circuits in the

domains

60 and 70. The manufacturer may perform different adjustments according to actual needs, for example, circuit conditions.

The biometric information sensing device 1 may further include a ground line G disposed around the plurality of sensing units 11, and in some embodiments, the grounding line G is in a grid shape, The sensing electrodes 111 are located in the same layer and are disposed around the sensing electrodes 111, respectively. Alternatively, the ground line G may be provided with a turn or the like on the periphery of the plurality of sensing units 11.

In addition, when the biometric information sensing device 1 is a domain with a domain as a voltage reference reference and the domain is based on the ground signal GND, the first reference signal and/or the second reference signal, for example It is a constant voltage signal with respect to the ground signal GND. However, when the biometric information sensing device 1 is based on two

domains

60 and 70 as a voltage reference, the first reference signal and/or the second reference signal is changed, for example, relative to the ground signal GND. The voltage signal is a constant voltage signal with respect to the modulation signal MGND.

Further, in addition to the above-described technical solution by using modulation, the power supply voltage signal of the modulation power supply terminal or the reference power supply may be used to uniformly modulate the signals output by the drive circuit 20 to the plurality of sensing units 11.

It should be further noted that by providing the first control switch 113 and the second control switch 115, the connection of the sensing unit 11 to the peripheral circuits (for example, the sensing driving circuit 22 and the reference signal generating circuit 23) can be reduced. foot.

Although the embodiments have been described herein with respect to specific configurations and operational sequences, it should be understood Solutions, alternative embodiments may add, omit or change components, operations, and the like. Accordingly, the embodiments disclosed herein are meant to be illustrative rather than limiting.

Claims

A capacitive sensing device comprising:

A plurality of sensing units, each sensing unit comprising:

Sense electrode

a first control switch connected to the sensing electrode; and

a second control switch connected to the sensing electrode; and

a driving circuit is respectively connected to the first control switch and the second control switch of the plurality of sensing units for controlling the first control switch and the second control switch in the same sensing unit to be turned on and off, and is turned on The first control switch transmits an excitation signal to the sensing electrode to perform a sensing operation, and transmits a first reference signal to the sensing electrode through the second control switch that is turned on.
The capacitive sensing device of claim 1 wherein said first reference signal is the same as said excitation signal.
The capacitive sensing device according to claim 1, wherein for the same column of sensing electrodes: when the driving circuit drives the first control switch of one of the sensing units to be turned on, and the second control switch is turned off The first control switch that drives some or all of the remaining sensing units is turned off, and the second control switch is turned on.
The capacitive sensing device according to claim 3, wherein said driving circuit supplies said excitation signal to said sensing electrode through said first control switch that is turned on, and receives a sensing operation from said sensing electrode Sensing signal to perform a self-capacitance sensing operation.
The capacitive sensing device according to claim 4, wherein said driving circuit comprises a scan driving circuit, a sensing driving circuit, and a reference signal generating circuit, wherein said scan driving circuit is for driving said a control switch circuit for turning on and off the second control switch, wherein the sensing driving circuit is configured to perform a sensing operation by driving the sensing electrode by the first control switch that is turned on, the reference signal generating circuit is configured to pass A second control switch that is turned on provides the second reference signal to the sensing electrode.
The capacitive sensing device according to claim 1 or 5, wherein when the scan driving circuit drives the first control switch of one row of sensing units to be turned on and the second control switch is turned off, the sensing driving The circuit simultaneously provides the excitation signal to the portion of the sensing electrode to perform a sensing operation by turning on the first control switch, the reference signal generating circuit further providing the same second reference signal to the remaining sensing through the first control switch that is turned on Sensing electrodes of some or all of the sensing units in the unit.
The capacitive sensing device of claim 6 wherein said second reference signal is identical to said first reference signal.
The capacitive sensing device according to claim 6, wherein: for the sensing electrodes of the same row: the driving circuit simultaneously drives a portion of the sensing electrodes to perform a sensing operation, by driving multiple times until driving A sensing electrode is performed to perform a sensing operation.
The capacitive sensing device according to claim 6, wherein said driving circuit further comprises a plurality of data selectors, said plurality of data selectors being coupled to said reference signal generating circuit and said sensing driving circuit Each data selector further connects the sensing electrodes of the partial sensing unit through a first control switch for selectively outputting the excitation signal or the second reference signal to the sensing electrodes.
The capacitive sensing device according to claim 9, wherein the driving circuit simultaneously outputs the excitation signal through each data selector to perform a sensing operation on a sensing electrode, and passes each data selector. The second reference signal is respectively output to some or all of the remaining sensing electrodes of the same row.
The capacitive sensing device according to claim 10, wherein said capacitive sensing device further comprises a control unit, said control unit being respectively coupled to said scan driving circuit and said plurality of data selectors, Controlling, by the scan driving circuit, driving a turn-on timing of the first control switch and the second control switch in each row of sensing units, and controlling outputting the excitation signal and the first by controlling the plurality of data selectors The timing of the second reference signal to the sensing electrode.
The capacitive sensing device of claim 11 wherein said capacitive sensing device further comprises:

a plurality of scan line groups, the scan line group including a first scan line and a second scan line; and

a plurality of data line groups, the data line group including a first data line and a second data line;

Each scan line group is connected to one row of sensing units, and each data line group is connected to one column of sensing units;

The first control switch includes a control electrode, a first transfer electrode, and a second transfer electrode; the second control switch includes a control electrode, a first transfer electrode, and a second transfer electrode; the first scan line connection a scan driving circuit and a control electrode of the first control switch; the second scan line connecting the scan driving circuit and the control electrode of the second control switch; the first data line connecting the data selector And a first transmission electrode of the first control switch; the second data line is connected to the first transmission electrode of the reference signal generation circuit and the second control switch; and the second transmission electrode of the first control switch is connected to the sense a measuring electrode; a second transmitting electrode of the second control switch is connected to the sensing electrode.
The capacitive sensing device according to claim 12, wherein said first data line is for transmitting said excitation signal and said second reference signal, and said second data line is for transmitting said a reference signal, the scan driving circuit provides a scan enable signal to the first control switch and the second control switch through the first scan line and the second scan line to control the first control switch and the second control switch to be turned on, The first control switch and the second control switch are controlled by the first scan line and the second scan line to control the first control switch and the second control switch to be turned off.
The capacitive sensing device of claim 13 wherein said capacitive sensing device further comprises:

a first reference signal line connecting the reference signal generating circuit and the second data line, for transmitting the first reference signal;

a second reference signal line connecting the reference signal generating circuit and the plurality of data selectors for transmitting the second reference signal; and

And a sensing signal line connecting the sensing driving circuit and the plurality of data selectors for transmitting the excitation signal to the sensing electrode and transmitting the sensing signal from the sensing electrode to the sensing driving circuit.
The capacitive sensing device according to claim 14, wherein said capacitive sensing device comprises a capacitive sensor, said capacitive sensor comprising an insulating substrate, said plurality of sensing units, said plurality a scan line group, the plurality of data line groups, and the first reference signal line, the plurality of sensing units, the plurality of scan line groups, the plurality of data line groups, and The first reference signal line is formed on the insulating substrate.
The capacitive sensing device according to claim 15, wherein the first control switch and the second control switch of each of the sensing units are thin film transistor switches, and the insulating substrate is a glass substrate.
The capacitive sensing device according to claim 1, wherein the sensing unit comprises a first control switch and a second control switch, or the sensing unit comprises two first controls connected in parallel. A switch and two second control switches connected in parallel.
The capacitive sensing device according to claim 15, wherein said insulating substrate comprises a first surface and a second surface disposed opposite said first surface, said first surface being adapted to receive a touch of a target object or Proximity input, the plurality of sensing units, the plurality of scan line groups, the plurality of data line groups, and the first reference signal line are disposed on the second surface.
The capacitive sensing device according to claim 18, wherein the sensing electrodes of the plurality of sensing units are compared to the first control switch, the second control switch, and the plurality of scans A line group, and the plurality of data line groups are closer to the second surface.
A capacitive sensing device according to claim 18, wherein said first control switch, said second control switch, said plurality of scan line groups, and said plurality of data line groups are located The sensing electrodes of the plurality of sensing units are opposite to one side of the insulating substrate.
The capacitive sensing device according to claim 18, wherein the sensing electrodes of the plurality of sensing units cover the first control switch, the second control switch, and the plurality of scan line groups a group, and the plurality of data line groups.
The capacitive sensing device according to claim 18, wherein said capacitive sensor further comprises said scan driving circuit, said plurality of data selectors, said second reference signal line, and said The sensing signal line, the scan driving circuit, the plurality of data selectors, the second reference signal line, and the sensing signal line are formed on a second surface of the insulating substrate.
The capacitive sensing device according to claim 22, wherein said scan driving circuit, said plurality of data selectors, said second reference signal line, and said sensing signal line are disposed in said Around the multiple sensing units.
The capacitive sensing device according to claim 22, wherein said scan driving circuit and said plurality of data selectors each comprise a control switch, said control switches being thin film transistor switches.
The capacitive sensing device according to claim 9, wherein each of the data selectors comprises a plurality of switching units, each of the switching units comprising a first selection switch and a second selection switch, the first selection switch comprising a control electrode, a first transfer electrode, and a second transfer electrode, the second selection switch comprising a control electrode, a first transfer electrode, and a second transfer electrode, wherein the control electrode and the second selection of the first selection switch a control electrode of the switch is respectively connected to the control unit, a first transmission electrode of the first selection switch is connected to the sensing driving circuit, a first transmission electrode of the second selection switch and the reference signal generating circuit Connected, the second transfer electrode of the first selection switch and the second transfer electrode of the second selection switch are connected and connected to the first data line.
The capacitive sensing device according to claim 25, wherein the control unit controls the first selection switch and the second selection switch of the same switching unit to be turned on in time.
The capacitive sensing device according to claim 18, wherein said capacitive sensor further comprises a passivation layer formed on said plurality of sensing units, said plurality of scan line groups, said plurality a data line group, and the first reference signal line.
The capacitive sensing device according to claim 27, wherein said capacitive sensing device further comprises a control chip, said control chip comprising said control unit, said reference signal generating circuit, and said sense Test drive circuit.
The capacitive sensing device according to claim 28, wherein said capacitive sensor and said control chip are respectively dies, said control chip being bonded to said insulating substrate; or said controlling The chip is disposed on a flexible circuit board, and is electrically connected to the capacitive sensor through the flexible circuit board.
The capacitive sensing device according to claim 6, wherein the driving circuit further comprises a modulating circuit for uniformly modulating a signal output by the driving circuit to the plurality of sensing units, To improve the signal to noise ratio of the sensing signal.
The capacitive sensing device of claim 1 wherein said capacitive sensing device is a fingerprint sensing device.
An electronic device comprising the capacitive sensing device of any of claims 1-31.