CN106533244A - Synchronous pulse power supply for millimeter wave solid-state power amplifier - Google Patents
Synchronous pulse power supply for millimeter wave solid-state power amplifier Download PDFInfo
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- CN106533244A CN106533244A CN201710007198.XA CN201710007198A CN106533244A CN 106533244 A CN106533244 A CN 106533244A CN 201710007198 A CN201710007198 A CN 201710007198A CN 106533244 A CN106533244 A CN 106533244A
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- power supply
- modulation switch
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M11/00—Power conversion systems not covered by the preceding groups
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02M—APPARATUS FOR CONVERSION BETWEEN AC AND AC, BETWEEN AC AND DC, OR BETWEEN DC AND DC, AND FOR USE WITH MAINS OR SIMILAR POWER SUPPLY SYSTEMS; CONVERSION OF DC OR AC INPUT POWER INTO SURGE OUTPUT POWER; CONTROL OR REGULATION THEREOF
- H02M1/00—Details of apparatus for conversion
- H02M1/08—Circuits specially adapted for the generation of control voltages for semiconductor devices incorporated in static converters
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
Abstract
The invention discloses a synchronous pulse power supply for a millimeter wave solid-state power amplifier. The input is +8V and +28V direct current power and TTL control signal level, and the output is +8V and +28V pulse voltage signals; the synchronous pulse power supply comprises an Mos transistor driving circuit, an output edge adjusting circuit and a modulation switch circuit; the Mos transistor driving circuit generates complementary Mos transistor driving control signals, the output edge adjusting circuit can adjust the rising edge and falling edge time of the output end of the pulse power supply, the modulation switch circuit is a complementary common-source push-pull output circuit composed of a P channel MOS transistor and an N channel MOS transistor, and the pulse power supply for the millimeter wave solid-state power amplifier is an indispensable component of the millimeter wave solid-state power amplifier as a driving source. By adopting a push-pull structure, the synchronous pulse power supply meets the requirement for capacitive load characteristic of the millimeter wave synthetic power amplifier, overcomes the defect of poor capacitive load characteristic of a single-tube power supply design, solves the problem of adjustability of the output edge and improves the reliability.
Description
Technical field
The present invention relates to electronic technology field, more particularly to a kind of millimeter wave solid state power amplifier lock-out pulse power supply.
Background technology
Traditional pulse power using mono-tube design export structure as shown in figure 1, Mos pipe Q1 source electrodes meet power supply VCC, drain electrode
Equivalent load is connect to ground level GND, equivalent load includes resistance R1, parasitic capacitance C1 and stray inductance L1, and the structure is most
Big shortcoming is that the output pulse falling edge time will extend, and millimeter wave solid state power amplifier has just if load is presented larger capacitive
There is capacitive, the structure is not well positioned to meet the demand of millimeter wave solid state power amplifier, and conventional power source drive control circuit is complicated, electricity
Volume source is big, often only one of which passage, and this is not clearly applied to the occasion for much having volumetric constraint.
The content of the invention
The invention mainly solves the technical problem of providing a kind of millimeter wave solid state power amplifier lock-out pulse power supply, milli is met
The capacitive load property requirements of metric wave solid state power amplifier, compensate for the shortcoming of single tube Power Management Design capacitive load characteristic difference, solve
The adjustable problem in output edge, improves the reliability of the pulse power.
To solve above-mentioned technical problem, one aspect of the present invention is：
A kind of millimeter wave solid state power amplifier lock-out pulse power supply is provided, is input into as+8V and+28V dc sources and TTL control signals
Level, is output as+8V and+28V pulse voltage signals, including Mos tube drive circuits 1, output edge adjust circuit 1, modulation and open
Powered-down road 1, Mos tube drive circuits 2, output edge adjust circuit 2 and modulation switch circuit 2, the Mos tube drive circuits 1, defeated
Go out edge regulation circuit 1 and modulation switch circuit 1 is connected with 8V dc sources, the input TTL control letters of Mos tube drive circuits 1
Number level, exports for controlling control signal DRV of+8V, and DRV control signals adjust the output modulation of circuit 1 through output edge
Control signal G1-1 and G2-1 of on-off circuit 1,1 Jing of modulation switch circuit this two path control signal controlled output+8V pulses electricity
Pressure, the Mos tube drive circuits 2, output edge regulation circuit 2 and modulation switch circuit 2 are connected with+28V dc sources, Mos
Tube drive circuit 2 is input into TTL control signal level, exports for controlling control signal DRV1 and DRV2, DRV1 and DRV2 of 28V
Control signal adjusts control signal G1-2 and G2-2 of the output modulation switch of circuit 2 circuit 2, modulation switch electricity through output edge
2 Jing of road this two path control signal controlled output+28V pulse voltage.
Further, the Mos tube drive circuits 1 include mosfet driver MIC44F19YMME, and signal TTL is by being input into
0 ~+5V level pulses be changed into 0 ~+8V level pulse DRV, and level driver ability strengthens.
Further, the Mos tube drive circuits 2 include the first mosfet driver and the second mosfet driver, institute
Stating the first mosfet driver includes MIC44F19YMME, and it is electric that signal TTL is changed into 0 ~+8V by the 0 ~+5V level pulses being input into
Flat pulse DRV2, and the enhancing of level driver ability, for driving recommending output mode low side N-channel MOS pipe Q2, the 2nd MOSFET
Driver includes MIC44F19YMME, and the control signal that high-end P-channel metal-oxide-semiconductor Q1 is exported to push-pull type is conducting for low level,
Signal TTL is changed into into+20 ~+28V electric relative to ground lifting 20V by the low level of the control signal using level lifting circuit
Flat pulse DRV1, for driving the high-end P-channel metal-oxide-semiconductor Q1 of recommending output mode, solves MOSFET driving problems.
Further, the modulation switch circuit 1 and modulation switch circuit 2 all include a P-channel and a N-channel
Integrated chip FDS8960C of metal-oxide-semiconductor composition, is connected as complementary type common-source stage totem pole, and modulation switch circuit 2 is also
Including Parallel opertation fly-wheel diode, to ensure the safety of MOSFET and load,
Beneficial effect.
1st, the capacitive load property requirements of millimeter wave solid state power amplifier using push-pull type export structure, are met, it is ensured that output arteries and veins
The edge time on edge is rushed, and exports edge time and be can adjust, compensate for the shortcoming of single tube Power Management Design capacitive load characteristic difference.
2nd, using level lifting circuit, usual MOSFET grid source Vgs control voltages maximum to be driven 28V's in 20V or so
Source voltage, it is necessary to enter line level lifting to control signal, solves MOSFET driving problems.
3rd, ensure the safety of MOSFET and load using output fly-wheel diode.
4th, small size, under the volume of regulation, realize the impulse modulation that two-way is respectively+8V and+28V power supplys, compare
In market, single channel power volume is less.
Description of the drawings
Fig. 1 is traditional pulse power supply export structure block diagram of the present invention；
Fig. 2 is general structure schematic diagram of the present invention；
Fig. 3 is that push-pull type of the present invention exports modulation switch structural representation；
Fig. 4 is 1 schematic diagram of Mos tube drive circuits of the present invention；
Fig. 5 is 2 schematic diagram of Mos tube drive circuits of the present invention；
Fig. 6 adjusts circuit theory diagrams for present invention output edge；
Fig. 7 is modulation switch circuit theory diagrams of the present invention.
Specific embodiment
The present invention is further described below in conjunction with the accompanying drawings：
The general structure block diagram of the present invention is as shown in Fig. 2 a kind of millimeter wave solid state power amplifier lock-out pulse power supply, is input into as+8V
With+28V dc sources and TTL control signal level ,+8V and+28V pulse voltage signals are output as, the two-way pulse power is mutual
Independent, it is Mos pipes to adjust circuit, modulation switch circuit with the Mos tube drive circuits needed for modulation voltage, output edge respectively
Drive circuit 1, output edge adjust circuit 1, modulation switch circuit 1 and Mos tube drive circuits 2, output edge and adjust 2 and of circuit
Modulation switch circuit 2 ,+8V dc sources adjust circuit 1, modulation switch circuit 1 and supply to Mos tube drive circuits 1, output edge
Electricity, and 0 ~+5V TTL control signals level is input into Mos tube drive circuits 1, Mos tube drive circuits 1 are changed into 0 by TTL is input into
~+8V level pulse DRV, and the enhancing of level driver ability, DRV control signals adjust the output modulation of circuit 1 through output edge and open
Control signal G1-1 and G2-1 on powered-down road 1,1 Jing control signals of modulation switch circuit control exportable+8V pulse voltages, together
Reason ,+28V dc sources adjust circuit 2, modulation switch circuit 2 and power to Mos tube drive circuits 2, output edge, and it is input into 0 ~
To Mos tube drive circuits 2, Mos tube drive circuits 2 include two mosfet drivers to 5V Transistor-Transistor Logic levels pulse control signal, the
Signal TTL is changed into 0 ~+8V level pulse DRV2 by the 0 ~ 5V level pulses being input into by one mosfet driver, for driving
Recommending output mode low side N-channel MOS pipe, second mosfet driver are changed into+20 ~+28V by TTL is input into by level lifting
Level pulse DRV1, for driving the high-end P-channel metal-oxide-semiconductor of recommending output mode, DRV1 and DRV2 control signals to adjust through output edge
Economize on electricity road 2 exports control signal G1-2 and G2-2 of modulation switch circuit 2, and the control of 2 Jing control signals of modulation switch circuit can be defeated
Go out+28V pulse voltages.
The push-pull type of the present invention exports modulation switch structural representation as shown in figure 3, by 1 P-channel metal-oxide-semiconductor Q1 and 1 N
Channel MOS tube Q2 composition common-source circuits, upper pipe be P-channel metal-oxide-semiconductor Q1, down tube be N-channel MOS pipe Q2, Mos pipe Q1 source electrodes
Power supply VCC, Mos pipe Q2 source ground level GND are met, the drain electrode and drain electrode of two metal-oxide-semiconductors are connected together as output end, defeated
Go out termination output 1 negative electrode of sustained diode, D1 plus earth level accesses equivalent load, equivalent negative between output end and ground level
Load includes resistance R1, parasitic capacitance C1 and stray inductance L1, when P-channel metal-oxide-semiconductor Q1 is opened, is output as power level VCC,
When N-channel MOS pipe Q2 is opened, system ground level GND is output as, using this structure, if load is with larger capacitive,
Quickly load power can be discharged by the metal-oxide-semiconductor Q2 of N-channel, when load with it is larger perceptual when, in the trailing edge stage, will
Induct larger backward voltage, cause metal-oxide-semiconductor to damage, D1 during trailing edge can clamp reverse induction voltage in -0.7V,
Ensure that the safety of output mos pipe.
1 schematic diagram of Mos tube drive circuits of the present invention is as shown in figure 4, U3 is integrated mosfet driver
MIC44F19YMME, the driver are output as push-pull type structure, are capable of achieving the level change of input TTL pulse signal, will input
TTL is changed into 0 ~+8V level pulse DRV, and the 2nd pin pin earth level GND of input power+8V, the 6th and the 7th of U3,4 pin connect input
TTL, TTL signal pull down to ground by R10 pull down resistors, it is ensured that the output in the case where being input into without TTL pulse is closed, 1 pin and 8
Pin connects and exports DRV signal, and the adoptable device model of above-mentioned schematic diagram can be chosen respectively：U3 is MIC44F19YMME,
The value of R10 is 4.7K Ω.
2 schematic diagram of Mos tube drive circuits of the present invention is as shown in figure 5, U4 is integrated mosfet driver
MIC44F19YMME, as U4 maximum supply voltages are 13.2V, adopts the structure of voltage regulation of R12 and D9 that the power supply of 8V is provided for U4
Voltage, specially R12 mono- terminate+28V, termination Zener diode D9 negative electrodes, D9 negative electrodes connection the 2nd pin of U4, D9 plus earths
Level GND, while in one 1nF electric capacity C25 of D9 two ends parallel connection, it is ensured that the output of U4 is from low level to the process of high level saltus step
Middle power supply capacity, the 6th and the 7th pin earth level GND, 4 pin meet input TTL, and 1 pin and 8 pin connect and export DRV2 signals, generally
MOSFET grid source Vgs control voltage maximums are in 20V or so, the source voltage driven by 28V, it is necessary to enter line level to control signal
Lifting, U5 are integrated mosfet driver MIC44F19YMME, using level lifting circuit, solve MOSFET driving problems,
As U5 maximum supply voltages are 13.2V, the reference ground of U5 is raised to by+20V using the structure of voltage regulation of R15 and D11, specially
R15 mono- terminates+28V, termination Zener diode D11 negative electrodes, D11 negative electrodes connection the 6th pin of U5 and the 7th pin, D11 plus earths electricity
The TTL outputs for being input into 0 ~+5V are lifted to+20 ~+28V, specially R17 one end using the structure of voltage regulation of R17 and D12 by flat GND
Connect the 2nd pin of+28V and U5, the 4th pin of another termination Zener diode D12 negative electrodes and U5, D12 anodes input TTL signal, the 1st pin of U5
With 8 pin connection output DRV1 signals, Mos tube drive circuits 2 will be input into TTL be changed into+20 ~+28V level pulses DRV2 and 0 ~+
8V level pulse DRV1, the adoptable device model of above-mentioned schematic diagram can be chosen respectively：U4, U5 are MIC44F19YMME, D9
For MM5Z8V, D11, D12 are MM5Z20V, and the value of R12 is 3.1K Ω, and the value of R15 is 1K Ω, and the value of R17 is 40.2K
Ω, C25 are 1nF.
The output edge of the present invention adjusts circuit theory diagrams as shown in fig. 6, adjusting circuit 1 and output side including output edge
Along circuit 2 is adjusted, DRV input R2, R2 connection diode D1 anodes, D1 string R1 to ground level GND, R3 are connected reverse parallel connection with D2
At R2 and D1 two ends, the tie point by R1 and R3 is that the partial pressure on R1 is opened and closed for N-channel MOS FET in integrated MOSFET
Disconnected to provide control signal G1-1, DRV input R6, R6 connection diode D4 anodes, D4 string R4 to+8V, R5 and D3 are connected reversely simultaneously
Be associated in R6 and D4 two ends, the tie point by R4 and R5 be the partial pressure on R4 be in integrated MOSFET P-channel MOSFET open with
Shut-off provides control signal G2-1, and DRV adjusts R2 in circuit 1, the adjustable+8V pulses electricity of R6, D1, D4 by above-mentioned output edge
The source output terminal trailing edge time, reduce resistance and can reduce the trailing edge time, by R3, the adjustable+8V pulse powers of R5, D2, D3
Output end rising time, reduces resistance and can reduce rising time, DRV2 input R9, R9 connection diode D7 anodes, D7 strings
R7 is connected to ground level GND, R8 and D5 and is connected in reverse parallel in R9 and D7 two ends, and the tie point by R7 and R8 is that the partial pressure on R7 is
In integrated MOSFET, N-channel MOS FET turns on and off offer control signal G1-2, DRV1 input R16, R16 connection diodes
D10 anodes, D10 string R13 to+28V, R14 and D8 are connected and are connected in reverse parallel in R16 and D10 two ends, by the tie point of R13 and R14
That is the partial pressure on R13 turns on and off offer control signal G2-2, DRV1 and DRV2 for P-channel MOSFET in integrated MOSFET
R9 in circuit 2 is adjusted by exporting edge, R16, D7, D10 can adjust the+28V pulse power output end trailing edge times, reduce electricity
Resistance can reduce the trailing edge time, R8, R14, D5, the adjustable+28V pulse power output end rising times of D8, and reducing resistance can
Rising time is reduced, the adoptable device model of above-mentioned schematic diagram can be chosen respectively：D1,D2,D3,D4,D5,D7,D8,
D10 is mbr0520, and R1, R4, R7, R13 value is 10K Ω, and R2, R5, R9 value is 16 Ω, and R3, R6 value is 5.1K Ω, R8,
R16 values are 1 Ω, and R14 values are 50 Ω.
The modulation switch circuit theory diagrams of the present invention are as shown in fig. 7, U1, U2 adopt integrated MOSFET chips
FDS8960C, an integrated P-channel and a N-channel MOS FET, using push-pull type structure, the structure can be more for present invention output
Single tube shortcoming of the output with capacitive load effect difference is mended, the 1st pin of U1 ground connection, the 3rd pin meet+8V, and the 2nd pin and the 4th pin meet G1- respectively
1 and G2-1, the 5th, 6,7,8 pin connection output Vout1 is the+8V pulse powers, when in Fig. 6, DRV signal is high level, the N of U1
Channel mosfet is turned on, P-channel MOSFET shut-offs, when DRV signal is low level, the N-channel MOS FET shut-offs of U1, and P-channel
MOSFET is open-minded, and so as to realize that+8V push-pull types are exported, the 1st pin of U2 ground connection, the 3rd pin meet+28V, and the 2nd pin and the 4th pin are connect respectively
G1-2 and G2-2, the 5th, 6,7,8 pin connection D6 negative electrodes simultaneously export the Vout2 i.e.+28V pulse powers, D6 plus earth level GND,
The P-channel MOSFET of+28V when the DRV1 signals in Fig. 6 are high level, U2 is closed, and now DRV2 signals are high level+8V,
The N-channel MOS FET of U2 is open-minded, is output as low level, and the P-channel MOSFET of+20V when DRV1 signals are low level, U2 is turned on,
Now DRV2 signals are ground level 0V, and the N-channel MOS FET of U2 is turned off, and exports high level, so as to realize+28V passage push-pull types
Output, the adoptable device model of above-mentioned schematic diagram can be chosen respectively：U1, U2 are FDS8960C, and D6 is mbr0520.
Claims (4)
1. a kind of millimeter wave solid state power amplifier lock-out pulse power supply, is input into as+8V and+28V dc sources and TTL control signals electricity
It is flat ,+8V and+28V pulse voltage signals are output as, including Mos tube drive circuits 1, output edge adjust circuit 1, modulation switch
Circuit 1, Mos tube drive circuits 2, output edge adjust circuit 2 and modulation switch circuit 2, the Mos tube drive circuits 1, output
Edge adjusts circuit 1 and modulation switch circuit 1 is connected with 8V dc sources, the input TTL control signals of Mos tube drive circuits 1
Level, exports for controlling control signal DRV of+8V, and DRV control signals adjust the output modulation of circuit 1 through output edge and open
Control signal G1-1 and G2-1 on powered-down road 1,1 Jing of modulation switch circuit this two path control signal controlled output+8V pulse voltage,
The Mos tube drive circuits 2, output edge regulation circuit 2 and modulation switch circuit 2 are connected with+28V dc sources, and Mos pipes drive
Dynamic circuit 2 is input into TTL control signal level, exports and controls for control signal DRV1 and DRV2, DRV1 and DRV2 for controlling 28V
Signal adjusts control signal G1-2 and G2-2 of the output modulation switch of circuit 2 circuit 2, modulation switch circuit 2 through output edge
Jing this two path control signal controlled output+28V pulse voltage.
2. millimeter wave solid state power amplifier lock-out pulse power supply according to claim 1, it is characterised in that the Mos pipes drive
Dynamic circuit 1 includes mosfet driver MIC44F19YMME, signal TTL is changed into 0 ~ 8V by the 0 ~ 5V level pulses being input into electric
Flat pulse DRV, and the enhancing of level driver ability.
3. millimeter wave solid state power amplifier lock-out pulse power supply according to claim 1, it is characterised in that the Mos pipes drive
Dynamic circuit 2 includes the first mosfet driver and the second mosfet driver, and first mosfet driver includes
Signal TTL is changed into 0 ~+8V level pulse DRV2, and level driver by the 0 ~+5V level pulses being input into by MIC44F19YMME
Ability strengthens, for driving recommending output mode down tube N-channel MOS pipe, second mosfet driver to include MIC44F19YMME,
It is conducting for low level to the control signal of push-pull type output upper tube P-channel metal-oxide-semiconductor, the control is believed using level lifting circuit
Number low level relative to ground lifting 20V, signal TTL is changed into into+20 ~+28V level pulse DRV1, for drive recommend it is defeated
Go out upper pipe P-channel metal-oxide-semiconductor, solve MOSFET driving problems.
4. millimeter wave solid state power amplifier lock-out pulse power supply according to claim 1, it is characterised in that the modulation switch
Circuit 1 and modulation switch circuit 2 all include integrated chip FDS8960C of a P-channel and a N-channel MOS pipe composition, even
It is connected in complementary type common-source stage totem pole.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710007198.XA CN106533244B (en) | 2017-01-05 | 2017-01-05 | A kind of millimeter wave solid state power amplifier lock-out pulse power supply |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201710007198.XA CN106533244B (en) | 2017-01-05 | 2017-01-05 | A kind of millimeter wave solid state power amplifier lock-out pulse power supply |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106533244A true CN106533244A (en) | 2017-03-22 |
| CN106533244B CN106533244B (en) | 2018-12-21 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201710007198.XA Expired - Fee Related CN106533244B (en) | 2017-01-05 | 2017-01-05 | A kind of millimeter wave solid state power amplifier lock-out pulse power supply |
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Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007014059A (en) * | 2005-06-28 | 2007-01-18 | Toyota Motor Corp | Switching circuit |
| CN201757975U (en) * | 2010-05-11 | 2011-03-09 | 福建捷联电子有限公司 | Push-pull DC high-voltage driving circuit for liquid crystal display single-tandem LED lamp |
| CN203086345U (en) * | 2013-02-01 | 2013-07-24 | 株洲电力机车厂长河机电产品开发公司 | Power converting device |
| CN103401449A (en) * | 2013-07-13 | 2013-11-20 | 西安电子科技大学 | High-power digital power amplification output circuit |
| CN105871224A (en) * | 2016-06-07 | 2016-08-17 | 深圳市智水小荷技术有限公司 | Ultrasonic power circuit and ultrasonic cleaning equipment |
-
2017
- 2017-01-05 CN CN201710007198.XA patent/CN106533244B/en not_active Expired - Fee Related
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2007014059A (en) * | 2005-06-28 | 2007-01-18 | Toyota Motor Corp | Switching circuit |
| CN201757975U (en) * | 2010-05-11 | 2011-03-09 | 福建捷联电子有限公司 | Push-pull DC high-voltage driving circuit for liquid crystal display single-tandem LED lamp |
| CN203086345U (en) * | 2013-02-01 | 2013-07-24 | 株洲电力机车厂长河机电产品开发公司 | Power converting device |
| CN103401449A (en) * | 2013-07-13 | 2013-11-20 | 西安电子科技大学 | High-power digital power amplification output circuit |
| CN105871224A (en) * | 2016-06-07 | 2016-08-17 | 深圳市智水小荷技术有限公司 | Ultrasonic power circuit and ultrasonic cleaning equipment |
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| Publication number | Publication date |
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| CN106533244B (en) | 2018-12-21 |
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Granted publication date: 20181221 Termination date: 20200105 |