CN103401449A - High-power digital power amplification output circuit - Google Patents
High-power digital power amplification output circuit Download PDFInfo
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Abstract
The invention discloses a high-power digital power amplification output circuit, which mainly solves the problems of complicated circuit structure, low output power and poor filtering effect in the prior art. The high-power digital power amplification output circuit comprises a power module, an inversion module and a filtering module, wherein the power module comprises 16 step modulation power sub modules, a pulse width modulation power sub module and a redundancy sub module, all of the sub modules are sequentially connected in series for generating positive power amplification signals to be output to the inversion module, the inversion module comprises four serial connection sub modules in identical structures, the serial connection sub modules are connected in pairs for forming two bridge arms so that two paths of signals with the same size and opposite phases can be generated, complete power amplification signals are generated through overlapping and are output to the filtering module, and the filtering module outputs the signals after carrying out filtering on the signals input by the inversion module. The high-power digital power amplification output circuit has the advantages that the circuit structure is simple, the output power is high, and the filtering effect is good. The high-power digital power amplification output circuit can be used in the field of high-power digital audio power amplification.
Description
Technical field
The invention belongs to the electronic circuit technology field, particularly high power digital power amplifier output circuit, can be applicable to the digital audio power amplifying system.
Background technology
In recent years, China's audio frequency power amplifier industry develops rapidly, and the domestic production technology constantly promotes.Along with the development of audio frequency apparatus digitizing technique with to the needs of hi-fidelity audio equipment, people recognize the importance for exploitation and the design of digital audio frequency power amplifier.Therefore, the digital amplifying technique of digital audio and video signals directly being processed has just had very large application prospect.Traditional analog amplifier generally adopts Industrial Frequency Transformer power supply and AB class power amplifier, and efficiency is low, volume is large, heavy, and application scenario is very restricted.And digital power amplifier is developed in recent years rapidly just because of its clear superiority at aspects such as volume, weight, efficiency and reliabilities.
The digital power amplification system is ripe on algorithm at present, and key is the inversion filtering output circuit of rear class.This part is directly connected to the quality of output waveform after power amplification.Rear class output at present comprises: the positive and negative topological circuit that is in series, the bridge inverter main circuit that single switching transistor forms, filter circuit, switching tube buffer circuit etc.The sort circuit structure, owing in each road topological circuit, all will realizing the output of positive and negative phase waveform, causes the circuit structure complexity, and percentage of circuit utilization is low, and the cascade way is many; Due to the bridge inverter main circuit that adopts single switching transistor to form, cause the inverter circuit brachium pontis withstand voltage low, thereby the restriction system power output can not meet the above power requirement of 3KW simultaneously; Because single inductance is adopted in the filter inductance design, cause filter bulky in addition, weak heat-dissipating, electromagnetic interference is serious, affects the filter filtering effect.
Summary of the invention
The object of the invention is to the deficiency for above-mentioned prior art, propose a kind of high power digital power amplifier output circuit, to simplify circuit structure, reduce electromagnetic interference, improve power output, make it meet the above power requirement of 3KW.
To achieve these goals, the present invention includes:
Power model, be used to the energy of power amplification is provided, it comprises n power submodule, inversion module is exported to after the power stack of these submodules in 1≤n≤46;
Inversion module, generate complete superposed signal according to the amplifying signal of power model input, exports to filtration module;
Filtration module, carry out filtering, the power output amplifying signal to the superposed signal of inversion module input;
It is characterized in that:
Described power model, comprise 16 ladder modulation power submodules, 1 pulse width modulation power submodule and 1 redundancy submodule, and each submodule produces a road forward amplifying signal; According to multiplication factor, select m ladder modulation power submodule to connect with 1 pulse width modulation power submodule, 1≤m≤16, this ladder modulation power submodule is used for forming the integer part of power amplification, this pulse width modulation power submodule is used for forming the fractional part of power amplification, and this redundancy submodule is for the backup as ladder modulation power submodule and pulse width modulation power submodule;
Described inversion module, comprise 4 sub-series modules that circuit structure is identical, and these 4 sub-series modules are composed in series two brachium pontis in twos, be used to generating the signal of two equal and opposite in directions, single spin-echo;
Described filtration module, adopt second-order low-pass filter, this second-order low-pass filter adopts three identical inductance coil L1, L2, L3 and filter capacitors of specification to be composed in series, the putting position of these three inductance coils be L2 perpendicular to L1 and L3, with reduce three between inductance coil the phase mutual interference and to the interference of other devices.
As preferably, described 16 ladder modulation power submodules, 1 pulse width modulation power submodule and 1 redundancy submodule, circuit structure is identical, and each power submodule is comprised of DC power supply DC1, insulated gate bipolar transistor Q1, two diode D1, D2, two capacitor C 1, C2 and resistance R 1;
This insulated gate bipolar transistor Q1, its grid connects control signal, emitter is connected with capacitor C 2 with negative pole, the forward output OUT+ of second diode D2 respectively, and collector electrode is connected with the positive pole of DC power supply DC1, positive pole, resistance R 1 and the positive pole of first diode D1 of capacitor C 1 respectively; The positive pole of second diode D2 is connected with negative sense output OUT-with the negative pole of DC power supply DC1, the negative pole of capacitor C 1 respectively.
As preferably, each sub-series module, comprise two insulated gate bipolar transistor Q2 and Q3, two diode Dg1, Dg2,6 resistance R 11, R12, R21, R22, Rg1, Rg2,4 capacitor C a1, Cb1, Ca2, Cb2;
This insulated gate bipolar transistor Q2 connects with Q3;
The grid of this insulated gate bipolar transistor Q2 is connected with the negative pole of diode Dg1 by resistance R g1, collector electrode is connected with the positive pole of diode Dg1 by resistance capacitance R11, Ca1 in parallel, and emitter is connected with the positive pole of diode Dg1 by resistance capacitance R12, Cb1 in parallel;
The grid of this insulated gate bipolar transistor Q3 is connected with the negative pole of diode Dg2 by resistance R g2, collector electrode is connected with the positive pole of diode Dg2 by resistance capacitance R21, Ca2 in parallel, and emitter is connected with the positive pole of diode Dg2 by resistance capacitance R22, Cb2 in parallel.
The present invention has following advantage:
1) the present invention connects with 1 pulse width modulation power submodule because power model adopts m ladder modulation power submodule, and 1≤m≤16, so the size of number regulation output power that can be by the trapeziodal modulation that adjusting is connected power submodule processed; While is because each submodule only produces a road forward amplifying signal, and the circuit structure of each submodule is identical, therefore the power model topological circuit is simple in structure, is easy to expansion; Due to parallel filtering electric capacity on DC power supply in topological circuit, therefore DC power supply can be selected the direct voltage source that voltage is larger, the stack way of topological circuit is significantly reduced in addition;
2) inversion module of the present invention, owing to adopting 4 sub-series modules that circuit structure is identical, makes the inversion module symmetrical configuration, stable output; Simultaneously, owing to having adopted two sub-series modules to be composed in series the brachium pontis of full-bridge circuit, significantly improve the withstand voltage and life span of brachium pontis, improved power output, can meet the above power requirement of 3KW;
3) filtration module of the present invention is owing to adopting three identical inductance coil L1, L2, L3 series connection of specification to substitute an original inductance, and putting position is that L2 is perpendicular to L1 and L3, therefore the phase mutual interference between these three inductance coils and the interference of other devices has all been reduced, filter effect is improved, compacter on structure, heat radiation is better.
The accompanying drawing explanation
Fig. 1 is circuit block diagram of the present invention;
Fig. 2 is the inversion module circuit block diagram in the present invention;
Fig. 3 is the topological circuit schematic diagram of power model in the present invention.
Fig. 4 is the sub-series modular circuit schematic diagram of inversion module in the present invention
Fig. 5 is the filter circuit schematic diagram of filtration module in the present invention
Embodiment
Below in conjunction with accompanying drawing, introduce in detail structure of the present invention.
With reference to Fig. 1, high power digital power amplifier output circuit provided by the invention, comprise power model, inversion module and filtration module; Wherein: power model comprises 16 ladder modulation power submodules, 1 pulse width modulation power submodule and 1 redundancy submodule; Inversion module, comprise 4 sub-series modules that circuit structure is identical, and these 4 sub-series modules are composed in series two brachium pontis in twos; Filtration module adopts low pass filter.
Series connection successively between each submodule in described power model, wherein ladder modulation power submodule is for the integer part of the power amplification of formation, the pulse width modulation power submodule is for the fractional part of the power amplification of formation, and the redundancy submodule is for the backup as ladder modulation power submodule and pulse width modulation power submodule; After 16 ladder modulation power submodules and 1 pulse width modulation power submodule overlapped in series, the forward power superposed signal of generation is exported to inversion module.
Described inversion module comprises 4 sub-series modules that circuit structure is identical, as shown in Figure 2, these 4 electric sub-series modules are composed in series the brachium pontis of two parallel connections in twos, the forward amplifying signal of its bridge arm 1 for generating, the negative sense amplifying signal of brachium pontis 2 for generating, and the forward amplifying signal that generates and negative sense amplifying signal equal and opposite in direction, single spin-echo, these two signal stacks generate complete amplifying signal and export to filtration module.
The low pass filter that described filtration module is comprised of inductance, electric capacity, for the radio-frequency component of the superposed signal of filtering inversion module input, filtered signal is exported to load.
Below in conjunction with the practical circuit that realizes of each module, the invention will be further described, but do not form any limitation of the invention, and in practice, these circuit forms can carry out different building and changing.
With reference to Fig. 3, the topological circuit of power model in the present invention, comprise DC source DC1, filter capacitor C1, insulated gate bipolar transistor Q1, two diode D1 and D2, resistance R 1 and capacitor C 2; Wherein:
The grid of described insulated gate bipolar transistor Q1 connects switch controlling signal, emitter meets respectively negative pole, forward output OUT+ and the polarity free capacitor C2 of diode D2, the negative pole of another terminating diode D1 of polarity free capacitor C2, diode D1 two ends parallel resistance R1, diode D1 positive pole connects respectively the collector electrode of insulated gate bipolar transistor Q1, the positive pole of capacitor C 2 and the positive pole of DC power supply DC1, the negative pole of DC power supply DC1 meets negative sense output OUT-, and OUT-meets the forward output OUT+ of next topological circuit;
When the control signal of insulated gate bipolar transistor Q1 grid was high level, Q1 was open-minded, and DC power supply DC1 is after filtering after capacitor C 1 filtering, from output forward output OUT+ and negative sense output OUT-output; When the control signal of insulated gate bipolar transistor Q1 grid becomes low level by high level, because the insulated gate bipolar transistor self character makes between collector electrode C and emitter E to exist the hangover electric current, this moment charges to capacitor C 2 by diode D1 in parallel on resistance R 1 in loop, make voltage on capacitor C 2 along with the collector electrode C of insulated gate bipolar transistor and the voltage at emitter E two ends rise together, because the voltage on capacitor C 2 can not suddenly change, so capacitor C 2 can play the effect that absorbs overvoltage surge; And the upper overvoltage surge that absorbs of C2 discharges by resistance R 1 when insulated gate bipolar transistor Q1 opens;
When because of power amplification, needing, while having turn-offed a road power submodule, the insulated gate bipolar transistor Q1 in this power submodule topological circuit turn-offs, and circuit forms loop by being connected across diode D2 between forward output OUT+ and negative sense output OUT-; And, when the power submodule is all opened, being connected across the diode D2 short circuit between forward output OUT+ and negative sense output OUT-, circuit forms loop by insulated gate bipolar transistor Q1.
With reference to Fig. 4, the sub-series module in inversion module of the present invention, comprise two insulated gate bipolar transistor Q2 and Q3,6 resistance R g1, Rg2, R11, R12, R21, R22,4 capacitor C a1, Cb1, Ca2, Cb2 and 2 diode Dg1, Dg2, wherein:
The grid of described insulated gate bipolar transistor Q2 is connected with resistance R g1 with control signal Con respectively, collector electrode is connected with signal input part Input, resistance R 11 and capacitor C a1 respectively, and emitter is connected with collector electrode, capacitor C b1, the resistance R 12 of insulated gate bipolar transistor Q3 respectively;
Described first diode Dg1, its negative pole is connected with resistance R g1, and positive pole is connected with capacitor C a1, capacitor C b1, resistance R 11 and resistance R 12 respectively;
Described insulated gate bipolar transistor Q3, its grid is connected with resistance R g2 with control signal Con respectively, collector electrode is connected with emitter, resistance R 21, resistance R 12, capacitor C b1 and the capacitor C a2 of insulated gate bipolar transistor Q2 respectively, and emitter is connected with signal output part Output, capacitor C b2, resistance R 22 respectively;
Described second diode Dg2, its negative pole is connected with resistance R g2, and positive pole is connected with capacitor C a2, capacitor C b2, resistance R 21 and resistance R 22 respectively;
When insulated gate bipolar transistor Q2 and Q3 conducting simultaneously, Q2 determines its magnitude of voltage by resistance R 11 and R12, and resistance R 11 > > R12, R11 plays main minute compression functions; Q3 determines its magnitude of voltage by resistance R 21 and R22, and R21 > > R22, R21 plays main minute compression functions; If in insulated gate bipolar transistor Q2, the value of resistance R 11+R12 is identical with the value of resistance R 21+R22 in Q3, the voltage of insulated gate bipolar transistor Q2 and Q3 equates, prevents from that voltage is unbalanced insulated gate bipolar transistor Q2 and Q3 are caused to damage;
When insulated gate bipolar transistor Q2 does not open fully, Q2 collector and emitter two ends will produce overvoltage; This moment, the current potential of capacitor C b1 top crown can rise very fast, make first diode Dg1 conducting, the grid of Q2 produces the forward voltage signal, accelerates the open-minded of Q2, thereby suppressed the overvoltage at Q2 collector and emitter two ends, protected insulated gate bipolar transistor Q2;
When insulated gate bipolar transistor Q2 opens fully, due to capacitor C a1 > > Cb1, Ca1 is a DC source with respect to Cb1, Ca1 charges to Cb1 by Q2, makes the polarity of capacitor C b1 become anti-, and the voltage U cb1=-Uca1 on capacitor C b1, the grid of insulated gate bipolar transistor Q2 is high potential, first diode Dg1 oppositely ends, and by control signal Con isolation, prevents that control signal Con is disturbed;
When insulated gate bipolar transistor Q2 turn-offs due to certain undesirable reason, Q2 collector and emitter two ends will produce overvoltage, and circuit is to capacitor C a1 and Cb1 charging; Due to capacitor C a1 > > Cb1, the voltage U ca1 on Ca1 is constant, and the voltage U cb1 on capacitor C b1 is for just and rise very fast, make first diode Dg1 conducting, give forward signal of Q2 grid, Q2 is open-minded, the overvoltage at its two ends is disappeared, protected insulated gate bipolar transistor Q2;
When insulated gate bipolar transistor Q2 turn-offed, the electric current by Q2 was reduced to 0 gradually, and circuit charges to Cb1 by capacitor C a1, and the voltage U cb1 on capacitor C b1 increases to gradually positive polarity, shortened the turn-off time of Q2 from-Uca1;
When insulated gate bipolar transistor Q3 does not open fully, Q3 collector and emitter two ends will produce overvoltage; This moment, the current potential of capacitor C b2 top crown can rise very fast, make second diode Dg2 conducting, the grid of Q3 produces the forward voltage signal, accelerates the open-minded of Q3, thereby suppressed the overvoltage at Q3 collector and emitter two ends, protected insulated gate bipolar transistor Q3;
When insulated gate bipolar transistor Q3 opens fully, due to capacitor C a2 > > Cb2, Ca2 is a DC source with respect to Cb2, Ca2 charges to Cb2 by Q3, makes the polarity of capacitor C b2 become anti-, and the voltage U cb2=-Uca2 on capacitor C b2, the grid of insulated gate bipolar transistor Q3 is high potential, second diode Dg2 oppositely ends, and by control signal Con isolation, prevents that control signal Con is disturbed;
When insulated gate bipolar transistor Q3 turn-offs due to certain undesirable reason, Q3 collector and emitter two ends will produce overvoltage, and circuit is to capacitor C a2 and Cb2 charging; Due to capacitor C a2 > > Cb2, the voltage U ca2 on Ca2 is constant, and the voltage U cb2 on capacitor C b2 is for just and rise very fast, make second diode Dg2 conducting, give forward signal of Q3 grid, Q3 is open-minded, the overvoltage at its two ends is disappeared, protected insulated gate bipolar transistor Q3;
When insulated gate bipolar transistor Q3 turn-offed, the electric current by Q3 was reduced to 0 gradually, and circuit charges to Cb2 by capacitor C a2, and the voltage U cb2 on capacitor C b2 increases to gradually positive polarity, shortened the turn-off time of Q3 from-Uca2.
With reference to Fig. 5, the filtration module in the present invention comprises 3 inductance coil L1, L2, L3, capacitor C 5 and resistance R 5 that specification is identical, wherein:
Described inductance coil L1, L2, L3 connect successively, and the putting position of these three inductance coils is that L2 is perpendicular to L1 and L3, the other end of inductance coil L3 is connected with negative-going signal input Shuru-with capacitor C 5 by resistance R 5 in parallel, and the other end of inductance coil L1 is connected with forward signal input Shuru+;
When in the superposed signal of inversion module input, comprising radio-frequency component, by inductance coil and electric capacity the radio-frequency component filtering that comprises in superposed signal, the power amplification signal of output smoothing.
Be only below example of the present invention, do not form any limitation of the invention.Obviously for those skilled in the art; after understanding content of the present invention and principle; all can not deviate from the situation of the principle of the invention, structure; carry out various modifications and change on form and details, but these corrections based on inventive concept and change are still within claim protection range of the present invention.
Claims (3)
1. high power digital power amplifier output circuit comprises:
Power model, be used to the energy of power amplification is provided, it comprises n power submodule, inversion module is exported to after the power stack of these submodules in 1≤n≤46;
Inversion module, generate complete superposed signal according to the amplifying signal of power model input, exports to filtration module;
Filtration module, carry out filtering, the power output amplifying signal to the superposed signal of inversion module input;
It is characterized in that:
Described power model, comprise 16 ladder modulation power submodules, 1 pulse width modulation power submodule and 1 redundancy submodule, and each submodule produces a road forward amplifying signal; According to multiplication factor, select m ladder modulation power submodule to connect with 1 pulse width modulation power submodule, 1≤m≤16, this ladder modulation power submodule is used for forming the integer part of power amplification, this pulse width modulation power submodule is used for forming the fractional part of power amplification, and this redundancy submodule is for the backup as ladder modulation power submodule and pulse width modulation power submodule;
Described inversion module, comprise 4 sub-series modules that circuit structure is identical, and these 4 sub-series modules are composed in series two brachium pontis in twos, be used to generating the signal of two equal and opposite in directions, single spin-echo;
Described filtration module, adopt second-order low-pass filter, this second-order low-pass filter adopts three identical inductance coil L1, L2, L3 and filter capacitors of specification to be composed in series, the putting position of these three inductance coils be L2 perpendicular to L1 and L3, with reduce three between inductance coil the phase mutual interference and to the interference of other devices.
2. high power digital power amplifier output circuit according to claim 1, it is characterized in that: described 16 ladder modulation power submodules, 1 pulse width modulation power submodule and 1 redundancy submodule, structure is identical, and each power submodule is comprised of DC power supply DC1, insulated gate bipolar transistor Q1, two diode D1, D2, two capacitor C 1, C2 and resistance R 1;
Described insulated gate bipolar transistor Q1, its grid connects control signal, emitter is connected with capacitor C 2 with negative pole, the forward output OUT+ of second diode D2 respectively, and collector electrode is connected with the positive pole of DC power supply DC1, positive pole, resistance R 1 and the positive pole of first diode D1 of capacitor C 1 respectively; The positive pole of second diode D2 is connected with negative sense output OUT-with the negative pole of DC power supply DC1, the negative pole of capacitor C 1 respectively.
3. high power digital power amplifier output circuit according to claim 1, it is characterized in that: each sub-series module, comprise two insulated gate bipolar transistor Q2 and Q3, two diode Dg1, Dg2,6 resistance R 11, R12, R21, R22, Rg1, Rg2,4 capacitor C a1, Cb1, Ca2, Cb2;
This insulated gate bipolar transistor Q2 connects with Q3;
The grid of this insulated gate bipolar transistor Q2 is connected with the negative pole of diode Dg1 by resistance R g1, collector electrode is connected with the positive pole of diode Dg1 by resistance capacitance R11, Ca1 in parallel, and emitter is connected with the positive pole of diode Dg1 by resistance capacitance R12, Cb1 in parallel;
The grid of this insulated gate bipolar transistor Q3 is connected with the negative pole of diode Dg2 by resistance R g2, collector electrode is connected with the positive pole of diode Dg2 by resistance capacitance R21, Ca2 in parallel, and emitter is connected with the positive pole of diode Dg2 by resistance capacitance R22, Cb2 in parallel.
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| CN106533244A (en) * | 2017-01-05 | 2017-03-22 | 西南科技大学 | Synchronous pulse power supply for millimeter wave solid-state power amplifier |
| CN112671349A (en) * | 2021-01-20 | 2021-04-16 | 中科长城海洋信息系统有限公司 | Digital power amplifier |
| CN112769405A (en) * | 2021-01-07 | 2021-05-07 | 中国电子科技集团公司第四十三研究所 | Full-bridge power amplification and II-type low-pass filter circuit topological structure based on SPWM technology |
| CN113224930A (en) * | 2021-05-31 | 2021-08-06 | 湖南科瑞变流电气股份有限公司 | Optical pulse power amplifier isolation circuit |
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| CN113224930A (en) * | 2021-05-31 | 2021-08-06 | 湖南科瑞变流电气股份有限公司 | Optical pulse power amplifier isolation circuit |
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