CN103401449B - High-power digital power amplification output circuit - Google Patents
High-power digital power amplification output circuit Download PDFInfo
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- CN103401449B CN103401449B CN201310296796.5A CN201310296796A CN103401449B CN 103401449 B CN103401449 B CN 103401449B CN 201310296796 A CN201310296796 A CN 201310296796A CN 103401449 B CN103401449 B CN 103401449B
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Abstract
The invention discloses a high-power digital power amplification output circuit, which mainly solves the problems of complicated circuit structure, low output power and poor filtering effect in the prior art. The high-power digital power amplification output circuit comprises a power module, an inversion module and a filtering module, wherein the power module comprises 16 step modulation power sub modules, a pulse width modulation power sub module and a redundancy sub module, all of the sub modules are sequentially connected in series for generating positive power amplification signals to be output to the inversion module, the inversion module comprises four serial connection sub modules in identical structures, the serial connection sub modules are connected in pairs for forming two bridge arms so that two paths of signals with the same size and opposite phases can be generated, complete power amplification signals are generated through overlapping and are output to the filtering module, and the filtering module outputs the signals after carrying out filtering on the signals input by the inversion module. The high-power digital power amplification output circuit has the advantages that the circuit structure is simple, the output power is high, and the filtering effect is good. The high-power digital power amplification output circuit can be used in the field of high-power digital audio power amplification.
Description
Technical field
The invention belongs to electronic circuit technology field, particularly high-power digital power amplification output circuit, can be applicable to digital audio power amplification system.
Background technology
In recent years, China's audio frequency power amplifier industry develops rapidly, and domestic production technology constantly promotes.Development along with audio frequency apparatus digitizing technique and the needs to hi-fidelity audio equipment, people recognize the importance of exploitation for digital audio frequency power amplifier and design.Therefore, very large application prospect is just provided with to the digital amplifying technique that digital audio and video signals directly processes.Traditional analog amplifier generally adopts Industrial Frequency Transformer power supply and AB class power amplifier, and efficiency is low, volume is large, heavy, and application scenario is very restricted.And digital power amplifier is just because of its clear superiority in volume, weight, efficiency and reliability etc., is developed rapidly in recent years.
Current digital power amplification system is algorithmically ripe, and key is the inversion filtering output circuit of rear class.This part is directly connected to the quality of output waveform after power amplification.Current rear class exports and comprises: the positive and negative topological circuit that is in series, the bridge inverter main circuit of single switching transistor composition, filter circuit, switching tube buffer circuit etc.This circuit structure owing to all will realize the output of positive and negative phase waveform in each road topological circuit, and cause circuit structure complicated, percentage of circuit utilization is low, and cascade way is many; Simultaneously owing to adopting the bridge inverter main circuit of single switching transistor composition, cause that inverter circuit brachium pontis is resistance to be forced down, thus restriction system power output can not meet more than 3KW power requirement; In addition because filter inductance design adopts single inductance, cause filter bulky, weak heat-dissipating, electromagnetic interference is serious, affects filter filtering effect.
Summary of the invention
The object of the invention is to the deficiency for above-mentioned prior art, propose a kind of high-power digital power amplification output circuit, to simplify circuit structure, reduce electromagnetic interference, improve power output, make it meet the power requirement of more than 3KW.
To achieve these goals, the present invention includes:
Power model, for providing the energy of power amplification, it comprises n power modules, 1≤n≤46, exports to inversion module after the power superposition of these submodules;
Inversion module, the amplifying signal according to power model input generates complete superposed signal, exports to filtration module;
Filtration module, carries out filtering, power output amplifying signal to the superposed signal of inversion module input;
It is characterized in that:
Described power model, comprises 16 step modulation power modules, 1 pulse width modulation power submodule and 1 redundancy submodule, and each submodule produces a road forward amplifying signal; M step modulation power modules is selected to connect with 1 pulse width modulation power submodule according to multiplication factor, 1≤m≤16, this step modulation power modules is used for forming the integer part of power amplification, this pulse width modulation power submodule is used for forming the fractional part of power amplification, and this redundancy submodule is used for the backup as step modulation power modules and pulse width modulation power submodule;
Described inversion module, comprises the sub-series module that 4 circuit structures are identical, and these 4 sub-series modules are composed in series two brachium pontis between two, for generating two equal and opposite in directions, signal that phase place is contrary;
Described filtration module, adopt second-order low-pass filter, inductance coil L1, L2, L3 that this second-order low-pass filter adopts three specifications identical and filter capacitor are composed in series, the putting position of these three inductance coils be L2 perpendicular to L1 and L3, to reduce the mutual interference between three inductance coils and the interference to other devices.
As preferably, 16 described step modulation power modules, 1 pulse width modulation power submodule and 1 redundancy submodule, circuit structure is identical, and each power modules is made up of DC power supply DC1, insulated gate bipolar transistor Q1, two diode D1, D2, two electric capacity C1, C2 and resistance R1;
This insulated gate bipolar transistor Q1, its grid connects control signal, emitter is connected with the negative pole of second diode D2, forward output OUT+ and electric capacity C2 respectively, and collector electrode is connected with the positive pole of DC power supply DC1, the positive pole of electric capacity C1, the positive pole of a resistance R1 and first diode D1 respectively; The positive pole of second diode D2 is connected with the negative pole of DC power supply DC1, the negative pole of electric capacity C1 and negative sense output OUT-respectively.
As preferably, each sub-series module, comprises two insulated gate bipolar transistor Q2 and Q3, two diodes Dg1, Dg2,6 resistance R11, R12, R21, R22, Rg1, Rg2,4 electric capacity Ca1, Cb1, Ca2, Cb2;
This insulated gate bipolar transistor Q2 and Q3 connects;
The grid of this insulated gate bipolar transistor Q2 is connected with the negative pole of diode Dg1 by resistance Rg1, collector electrode is connected with the positive pole of diode Dg1 by resistance capacitance R11, Ca1 in parallel, and emitter is connected with the positive pole of diode Dg1 by resistance capacitance R12, Cb1 in parallel;
The grid of this insulated gate bipolar transistor Q3 is connected with the negative pole of diode Dg2 by resistance Rg2, collector electrode is connected with the positive pole of diode Dg2 by resistance capacitance R21, Ca2 in parallel, and emitter is connected with the positive pole of diode Dg2 by resistance capacitance R22, Cb2 in parallel.
Tool of the present invention has the following advantages:
1) the present invention adopts m step modulation power modules connect with 1 pulse width modulation power submodule due to power model, and 1≤m≤16, so the size of number regulation output power can passing through the trapeziodal modulation power modules that adjustment is connected; Simultaneously because each submodule only produces a road forward amplifying signal, and the circuit structure of each submodule is identical, therefore power model topological circuit structure is simple, is easy to expansion; In addition due to parallel filtering electric capacity in DC power supply in topological circuit, therefore DC power supply can select the direct voltage source that voltage is larger, and the superposition way of topological circuit is significantly reduced;
2) inversion module of the present invention is owing to adopting the sub-series module that 4 circuit structures are identical, makes inversion module symmetrical configuration, stable output; Simultaneously owing to have employed the brachium pontis of two sub-series block coupled in series composition full-bridge circuits, significantly improve the withstand voltage of brachium pontis and life span, improve power output, the power requirement of more than 3KW can be met;
3) filtration module of the present invention substitutes an original inductance due to inductance coil L1, L2, L3 series connection adopting three specifications identical, and putting position is that L2 is perpendicular to L1 and L3, therefore mutual interference between these three inductance coils and the interference of other devices is reduced, filter effect is improved, compacter in structure, heat radiation is better.
Accompanying drawing explanation
Fig. 1 is circuit block diagram of the present invention;
Fig. 2 is the inversion module circuit block diagram in the present invention;
Fig. 3 is the topological circuit schematic diagram of power model in the present invention.
Fig. 4 is the sub-series modular circuit schematic diagram of inversion module in the present invention
Fig. 5 is the filter circuit schematic diagram of filtration module in the present invention
Embodiment
Below in conjunction with accompanying drawing, introduce structure of the present invention in detail.
With reference to Fig. 1, high-power digital power amplification output circuit provided by the invention, comprises power model, inversion module and filtration module; Wherein: power model, comprise 16 step modulation power modules, 1 pulse width modulation power submodule and 1 redundancy submodule; Inversion module, comprises the sub-series module that 4 circuit structures are identical, and these 4 sub-series modules are composed in series two brachium pontis between two; Filtration module adopts low pass filter.
Connect successively between each submodule in described power model, the wherein integer part of power amplification of step modulation power modules for forming, the fractional part of power amplification of pulse width modulation power submodule for forming, redundancy submodule is used for the backup as step modulation power modules and pulse width modulation power submodule; After 16 step modulation power modules and 1 pulse width modulation power submodule overlapped in series, the forward power superposed signal of generation exports to inversion module.
Described inversion module comprises the identical sub-series module of 4 circuit structures, as shown in Figure 2, these 4 electric sub-series modules are composed in series two brachium pontis in parallel between two, the forward amplifying signal of its bridge arm 1 for generating, the negative sense amplifying signal of brachium pontis 2 for generating, and the forward amplifying signal generated and negative sense amplifying signal equal and opposite in direction, phase place are contrary, these two Signal averaging generate complete amplifying signal and export to filtration module.
The low pass filter that described filtration module is made up of inductance, electric capacity, for the radio-frequency component in the superposed signal of filtering inversion module input, filtered signal exports to load.
Below in conjunction with the realizing circuit example of each module, the invention will be further described, but do not form any limitation of the invention, and in practice, these circuit forms can carry out different building and changing.
With reference to Fig. 3, in the present invention, the topological circuit of power model, comprises DC source DC1, filter capacitor C1, insulated gate bipolar transistor Q1, two diode D1 and D2, resistance R1 and electric capacity C2; Wherein:
The grid of described insulated gate bipolar transistor Q1 connects switch controlling signal, emitter meets negative pole, the forward output OUT+ and polarity free capacitor C2 of diode D2 respectively, the negative pole of another terminating diode D1 of polarity free capacitor C2, diode D1 two ends parallel resistance R1, diode D1 positive pole connects the collector electrode of insulated gate bipolar transistor Q1, the positive pole of electric capacity C2 and the positive pole of DC power supply DC1 respectively, the negative pole of DC power supply DC1 meets negative sense output OUT-, and OUT-meets the forward output OUT+ of next topological circuit;
When the control signal of insulated gate bipolar transistor Q1 grid is high level, Q1 is open-minded, and DC power supply DC1, after filtering after electric capacity C1 filtering, exports from output forward output OUT+ and negative sense output OUT-; When the control signal of insulated gate bipolar transistor Q1 grid becomes low level from high level, because insulated gate bipolar transistor self character makes to there is tail currents between collector electrode C and emitter E, now charged to electric capacity C2 by diode D1 in parallel on resistance R1 in loop, the voltage on electric capacity C2 is made to increase together with the voltage at emitter E two ends along with the collector electrode C of insulated gate bipolar transistor, because the voltage on electric capacity C2 can not suddenly change, therefore electric capacity C2 can play the effect absorbing overvoltage surge; And the overvoltage surge that C2 absorbs is when insulated gate bipolar transistor Q1 opens, discharged by resistance R1;
When needing because of power amplification, when have turned off a road power modules, the insulated gate bipolar transistor Q1 in this power modules topological circuit turns off, and circuit forms loop by being connected across diode D2 between forward output OUT+ and negative sense output OUT-; And when power modules is all opened, being connected across the diode D2 short circuit between forward output OUT+ and negative sense output OUT-, circuit forms loop by insulated gate bipolar transistor Q1.
With reference to Fig. 4, the sub-series module in inversion module of the present invention, comprises two insulated gate bipolar transistor Q2 and Q3,6 resistance Rg1, Rg2, R11, R12, R21, R22,4 electric capacity Ca1, Cb1, Ca2, Cb2 and 2 diodes Dg1, Dg2, wherein:
The grid of described insulated gate bipolar transistor Q2 is connected with control signal Con and resistance Rg1 respectively, collector electrode is connected with signal input part Input, resistance R11 and electric capacity Ca1 respectively, and emitter is connected with the collector electrode of insulated gate bipolar transistor Q3, electric capacity Cb1, resistance R12 respectively;
Described first diode Dg1, its negative pole is connected with resistance Rg1, and positive pole is connected with electric capacity Ca1, electric capacity Cb1, resistance R11 and resistance R12 respectively;
Described insulated gate bipolar transistor Q3, its grid is connected with control signal Con and resistance Rg2 respectively, collector electrode is connected with the emitter of insulated gate bipolar transistor Q2, resistance R21, resistance R12, electric capacity Cb1 and electric capacity Ca2 respectively, and emitter is connected with signal output part Output, electric capacity Cb2, resistance R22 respectively;
Described second diode Dg2, its negative pole is connected with resistance Rg2, and positive pole is connected with electric capacity Ca2, electric capacity Cb2, resistance R21 and resistance R22 respectively;
When insulated gate bipolar transistor Q2 and Q3 conducting simultaneously, Q2 determines its magnitude of voltage by resistance R11 and R12, and resistance R11>>R12, R11 play main point compression functions; Q3 determines its magnitude of voltage by resistance R21 and R22, and R21>>R22, R21 play main point compression functions; If the value of resistance R11+R12 is identical with the value of resistance R21+R22 in Q3 in insulated gate bipolar transistor Q2, then the voltage of insulated gate bipolar transistor Q2 and Q3 is equal, prevents that voltage is unbalanced causes damage to insulated gate bipolar transistor Q2 and Q3;
When insulated gate bipolar transistor Q2 does not open completely, Q2 collector and emitter two ends will produce overvoltage; Now the current potential of electric capacity Cb1 top crown can rise very fast, make first diode Dg1 conducting, the grid of Q2 produces forward voltage signal, accelerates the open-minded of Q2, thus inhibit the overvoltage at Q2 collector and emitter two ends, protect insulated gate bipolar transistor Q2;
When insulated gate bipolar transistor Q2 opens completely, due to electric capacity Ca1>>Cb1, Ca1 is a DC source relative to Cb1, Ca1 is charged to Cb1 by Q2, makes the polarity of electric capacity Cb1 become anti-, and the voltage U cb1=-Uca1 on electric capacity Cb1, the grid of insulated gate bipolar transistor Q2 is high potential, first diode Dg1 oppositely ends, and is isolated by control signal Con, prevents control signal Con disturbed;
When insulated gate bipolar transistor Q2 turns off due to certain undesirable reason, Q2 collector and emitter two ends will produce overvoltage, and circuit charges to electric capacity Ca1 and Cb1; Due to electric capacity Ca1>>Cb1, voltage U ca1 on Ca1 is constant, and the voltage U cb1 on electric capacity Cb1 is just and rises very fast, make first diode Dg1 conducting, to Q2 grid forward signal, Q2 is open-minded, the overvoltage at its two ends is disappeared, protects insulated gate bipolar transistor Q2;
When insulated gate bipolar transistor Q2 turns off, be reduced to 0 gradually by the electric current of Q2, circuit is charged to Cb1 by electric capacity Ca1, and the voltage U cb1 on electric capacity Cb1 increases to positive polarity gradually from-Uca1, shortens the turn-off time of Q2;
When insulated gate bipolar transistor Q3 does not open completely, Q3 collector and emitter two ends will produce overvoltage; Now the current potential of electric capacity Cb2 top crown can rise very fast, make second diode Dg2 conducting, the grid of Q3 produces forward voltage signal, accelerates the open-minded of Q3, thus inhibit the overvoltage at Q3 collector and emitter two ends, protect insulated gate bipolar transistor Q3;
When insulated gate bipolar transistor Q3 opens completely, due to electric capacity Ca2>>Cb2, Ca2 is a DC source relative to Cb2, Ca2 is charged to Cb2 by Q3, makes the polarity of electric capacity Cb2 become anti-, and the voltage U cb2=-Uca2 on electric capacity Cb2, the grid of insulated gate bipolar transistor Q3 is high potential, second diode Dg2 oppositely ends, and is isolated by control signal Con, prevents control signal Con disturbed;
When insulated gate bipolar transistor Q3 turns off due to certain undesirable reason, Q3 collector and emitter two ends will produce overvoltage, and circuit charges to electric capacity Ca2 and Cb2; Due to electric capacity Ca2>>Cb2, voltage U ca2 on Ca2 is constant, and the voltage U cb2 on electric capacity Cb2 is just and rises very fast, make second diode Dg2 conducting, to Q3 grid forward signal, Q3 is open-minded, the overvoltage at its two ends is disappeared, protects insulated gate bipolar transistor Q3;
When insulated gate bipolar transistor Q3 turns off, be reduced to 0 gradually by the electric current of Q3, circuit is charged to Cb2 by electric capacity Ca2, and the voltage U cb2 on electric capacity Cb2 increases to positive polarity gradually from-Uca2, shortens the turn-off time of Q3.
With reference to Fig. 5, the filtration module in the present invention comprises 3 specifications identical inductance coil L1, L2, L3, electric capacity C5 and resistance R5, wherein:
Described inductance coil L1, L2, L3 connect successively, and the putting position of these three inductance coils is that L2 is perpendicular to L1 and L3, the other end of inductance coil L3 is connected with negative-going signal input Shuru-with electric capacity C5 by resistance R5 in parallel, and the other end of inductance coil L1 is connected with forward signal input Shuru+;
When comprising radio-frequency component in the superposed signal of inversion module input, by inductance coil and electric capacity the radio-frequency component filtering comprised in superposed signal, the power amplified signal of output smoothing.
Below be only example of the present invention, do not form any limitation of the invention.Obviously for those skilled in the art; after understanding content of the present invention and principle; when all can not deviate from the principle of the invention, structure; carry out the various amendment in form and details and change, but these corrections based on inventive concept and change are still within claims of the present invention.
Claims (3)
1. a high-power digital power amplification output circuit, comprising:
Power model, for providing the energy of power amplification, it comprises n power modules, 1≤n≤46, exports to inversion module after the power superposition of these submodules;
Inversion module, the amplifying signal according to power model input generates complete superposed signal, exports to filtration module;
Filtration module, carries out filtering, power output amplifying signal to the superposed signal of inversion module input;
It is characterized in that:
N described power modules, comprises 16 step modulation power modules, 1 pulse width modulation power submodule and 1 redundancy submodule, and each submodule produces a road forward amplifying signal; M step modulation power modules is selected to connect with 1 pulse width modulation power submodule according to multiplication factor, 1≤m≤16, this step modulation power modules is used for forming the integer part of power amplification, this pulse width modulation power submodule is used for forming the fractional part of power amplification, and this redundancy submodule is used for the backup as step modulation power modules and pulse width modulation power submodule;
Described inversion module, comprises the sub-series module that 4 circuit structures are identical, and these 4 sub-series modules are composed in series two brachium pontis between two, for generating two equal and opposite in directions, signal that phase place is contrary;
Described filtration module, adopt second-order low-pass filter, inductance coil L1, L2, L3 that this second-order low-pass filter adopts three specifications identical and filter capacitor are composed in series, the putting position of these three inductance coils be L2 perpendicular to L1 and L3, to reduce the mutual interference between three inductance coils and the interference to other devices.
2. high-power digital power amplification output circuit according to claim 1, it is characterized in that: 16 described step modulation power modules, 1 pulse width modulation power submodule and 1 redundancy submodule, structure is identical, and each power modules is made up of DC power supply DC1, insulated gate bipolar transistor Q1, two diode D1, D2, two electric capacity C1, C2 and resistance R1;
Described insulated gate bipolar transistor Q1, its grid connects control signal, emitter is connected with the negative pole of second diode D2, forward output OUT+ and electric capacity C2 respectively, and collector electrode is connected with the positive pole of DC power supply DC1, the positive pole of electric capacity C1, the positive pole of a resistance R1 and first diode D1 respectively; The positive pole of second diode D2 is connected with the negative pole of DC power supply DC1, the negative pole of electric capacity C1 and negative sense output OUT-respectively.
3. high-power digital power amplification output circuit according to claim 1, it is characterized in that: each sub-series module, comprise two insulated gate bipolar transistor Q2 and Q3, two diodes Dg1, Dg2,6 resistance R11, R12, R21, R22, Rg1, Rg2,4 electric capacity Ca1, Cb1, Ca2, Cb2;
This insulated gate bipolar transistor Q2 and Q3 connects;
The grid of this insulated gate bipolar transistor Q2 is connected with the negative pole of diode Dg1 by resistance Rg1, collector electrode is connected with the positive pole of diode Dg1 by resistance capacitance R11, Ca1 in parallel, and emitter is connected with the positive pole of diode Dg1 by resistance capacitance R12, Cb1 in parallel;
The grid of this insulated gate bipolar transistor Q3 is connected with the negative pole of diode Dg2 by resistance Rg2, collector electrode is connected with the positive pole of diode Dg2 by resistance capacitance R21, Ca2 in parallel, and emitter is connected with the positive pole of diode Dg2 by resistance capacitance R22, Cb2 in parallel.
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| CN201310296796.5A CN103401449B (en) | 2013-07-13 | 2013-07-13 | High-power digital power amplification output circuit |
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| CN201310296796.5A CN103401449B (en) | 2013-07-13 | 2013-07-13 | High-power digital power amplification output circuit |
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| CN103401449B true CN103401449B (en) | 2015-07-15 |
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| CN106533244B (en) * | 2017-01-05 | 2018-12-21 | 西南科技大学 | A kind of millimeter wave solid state power amplifier lock-out pulse power supply |
| CN112769405B (en) * | 2021-01-07 | 2023-12-12 | 中国电子科技集团公司第四十三研究所 | Full-bridge power amplification and pi-shaped low-pass filter circuit topological structure based on SPWM technology |
| CN113224930A (en) * | 2021-05-31 | 2021-08-06 | 湖南科瑞变流电气股份有限公司 | Optical pulse power amplifier isolation circuit |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| DE69940533D1 (en) * | 1998-07-30 | 2009-04-23 | Koninkl Philips Electronics Nv | Power amplifier with soft switching and multi-level switching cells |
| US6611169B2 (en) * | 2001-10-01 | 2003-08-26 | Gibson Guitar Corp. | Power supply regulation and protection circuit for audio power amplifier |
| US7369819B2 (en) * | 2005-04-14 | 2008-05-06 | Harris Corporation | Digital amplitude modulation transmitter with pulse width modulating RF drive |
| JP2009049671A (en) * | 2007-08-20 | 2009-03-05 | Rohm Co Ltd | Output-limiting circuit, class d power amplifier, sound apparatus |
| CN201307847Y (en) * | 2008-12-05 | 2009-09-09 | 深圳市凯弦电气自动化有限公司 | Efficient tracking power supply source employing power amplification circuit |
| US8823343B2 (en) * | 2009-12-22 | 2014-09-02 | Yamaha Corporation | Power amplifying circuit, DC-DC converter, peak holding circuit, and output voltage control circuit including the peak holding circuit |
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