CN106532655A - Overheat protection circuit in power management chip - Google Patents
Overheat protection circuit in power management chip Download PDFInfo
- Publication number
- CN106532655A CN106532655A CN201611190694.5A CN201611190694A CN106532655A CN 106532655 A CN106532655 A CN 106532655A CN 201611190694 A CN201611190694 A CN 201611190694A CN 106532655 A CN106532655 A CN 106532655A
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- temperature
- thermal shutdown
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H3/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal electric working condition with or without subsequent reconnection ; integrated protection
- H02H3/02—Details
- H02H3/06—Details with automatic reconnection
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H5/00—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection
- H02H5/04—Emergency protective circuit arrangements for automatic disconnection directly responsive to an undesired change from normal non-electric working conditions with or without subsequent reconnection responsive to abnormal temperature
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
- H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
- H02H7/20—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
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- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Amplifiers (AREA)
- Emergency Protection Circuit Devices (AREA)
- Protection Of Static Devices (AREA)
Abstract
The invention provides an overheat protection circuit capable of being used for a power management chip for temperature detection and overheat protection on the circuit. When the power management chip normally works, the overheat protection circuit does not work. When output of the power management chip is overload, the temperature of the chip continuously rises, the overheat protection circuit begins to work and outputs a thermal shutdown signal when a thermal shutdown temperature is reached, a power switch tube is cut off and the temperature of the chip is reduced. Meanwhile, the overheat protection circuit has a temperature lag, that is to say, conduction of the power tube is restored when the temperature falls to a fixed temperature difference from the thermal shutdown temperature, so that the harm caused by thermal oscillation near the thermal shutdown temperature can be prevented and the temperature of the chip can be safely and effectively controlled to be below the thermal shutdown temperature.
Description
Technical field
The present invention relates to power management integrated circuit resist technology field, espespecially a kind of overheating protection circuit, when its detection
When exceeding the thermal shutdown temperature of setting to temperature, rapid breaking circuit prevents chip overheating from burning.
Background technology
The temperature of power management chip often raises 2 DEG C, and security reliability just declines 10%, and temperature raises power supply when 50 DEG C
Managing chip working life be temperature raise 25 DEG C when 1/6.In order to protect power management chip so as in the case of a high temperature not
It is damaged, it is necessary to which overheating protection circuit is set, so that when chip operating temperature exceedes permissible value, protection circuit is by main work(
Consumption circuitry cuts.Power management integrated circuit with linear voltage regulator and switching regulator as representative, has inside which and flows through
The output pipe of high current.Therefore output pipe transship and it is cooling integrated it is insufficient in the case of, exist because of mistake
Device cause thermal damage caused by hot, or even smolder and danger on fire, therefore in order to ensure safety, in the electricity for processing high current
Source control integrated circuit is built-in with overheating protection circuit.
Generally, by the base emitter junction of diode or triode, i.e., PN junction is used as temperature-sensitive element for overheating protection circuit.PN junction
Forward voltage depend on the band gap of silicon, its temperature coefficient is also unrelated with technique, substantially -2mV/ DEG C.By to the thermal element
The output of part is compared with the reference voltage for not having temperature coefficient, can detect whether temperature-sensitive element exceedes uniform temperature.By benchmark
Voltage is set as that the output voltage with temperature-sensitive element under overtemperature is equal.Overheating protection circuit is configured to：Temperature-sensitive element
, used as the positive negative input of comparator, when thermal shutdown temperature is reached, two voltages are equal for output voltage and reference voltage, comparator it is defeated
Go out upset, end output pipe.
But during the overheating protection circuit constituted by said structure, in order to improve detection temperature precision, exist following
Problem.
Reference voltage circuit high-precision first causes chip area to be significantly increased, and the random offset of comparator is to produce in addition
The main cause of biopsy testing temperature deviation.For the detection temperature deviation that the random offset reduced because of comparator causes, as long as subtracting
The temperature coefficient of the random offset and increase temperature-sensitive element of little comparator.In order to reduce the random offset of comparator, it is necessary to
Increase constitutes the size of the transistor of comparator, so as to also cause area to increase.Still further aspect, if increase temperature-sensitive element
Temperature coefficient, then it is very big to the output voltage amplitude of variation of overheated high-temperature heat-sensitive element from room temperature, it is unfavorable for work under low-voltage
Make.
The content of the invention：
It is an object of the present invention to constitute following overheating protection circuit, it is not necessary to build complicated high precision reference electricity
Volt circuit and comparator circuit, with shut-off threshold point accurately, to the insensitive of power supply and technological parameter, and simple structure
The advantages of area occupied is little, and possess temperature hysteresis function and prevent the harm that thermal oscillation brings.
In order to reach above-mentioned purpose, the preferred embodiments of the present invention overheating protection circuit Fig. 2 is configured to, using being operated in phase
With the audion with different emitter areas (or be operated in the metal-oxide-semiconductor of subthreshold region) under electric current density with temperature
Poor this principle of proportional base-emitter voltage, by Δ VBEThe PTAT current fallen on a Low Drift Temperature resistance, needed for producing.
This simple structure, takes very little area, and generally this structure needs a start-up circuit, but not in this patent discussion category, therefore not
Draw.P3, p4, p5 are image current source capsule, and its effect is exactly according to device size ratio, image copying PTAT current.Will be multiple
The PTAT current of system can be flow through sampling resistor R7 and R8, temperature change is converted with the change of detection temperature as temperature-sensitive element
For change in voltage.When chip transships, and temperature rising reaches thermal shutdown temperature, the pressure drop on sampling resistor R7 and R8 makes transistor
N3 is turned on, and series of voltage upset occurs, Thermal shutdown pipe n5 is opened, has been interrupted regulator control loop, has been made power switch pipe 203
Shut-off.When there is Thermal shutdown, n4 cut-offs, resistance R9 are dexterously connected in the outfan of transistor n4 and the connection of resistance R7 and R8
Between point, feedback is introduced, produce temperature hysteresis.This overtemperature protection electricity is understood according to the derivation in detailed description below
Road can make shut-off temperature threshold be substantially independent of supply voltage, PTAT current size and changes in process parameters, also substantially not
Affected by temperature-coefficient of electrical resistance and square resistance size variation, therefore thermal shutdown temperature threshold point is had very high precision, more
For it is important that this circuit structure simply, saves area.
Description of the drawings
Fig. 1 is the simplified electrical circuit diagram of overheating protection circuit of the present invention.
Fig. 2 is the circuit diagram of the overheating protection circuit of the preferred embodiment of the present invention and its voltage regulator circuit protected.
When Fig. 3 is that the overheating protection circuit in the preferred embodiment of the present invention plays a role, the output voltage V4 of Thermal shutdown pipe
The schematic diagram for varying with temperature.
Specific embodiment
[first embodiment]
Fig. 1 is the simplified electrical circuit diagram of the overheating protection circuit of present embodiment.
The overheating protection circuit 100 of present embodiment has a PTAT current source I1, I2, I3 and by resistance R1, R2, R3,
The Thermal shutdown circuit that R4 and transistor n1, n2, n3 are constituted.PTAT current source can be by various producing methods, such as using having
PTAT needed for the audion (or with various sizes of metal-oxide-semiconductor for being operated in subthreshold region) of different emitter areas is produced is electric
Stream；Or the PTAT current (if any) that the current source circuit in direct mirror image power management chip is produced.By what is produced
PTAT samples it using resistance R1 and R2 and changes come detection temperature as temperature-sensitive element.When temperature reaches thermal shutdown temperature, n1,
The output V2 of n2, n3, V3, V4 realize a series of upsets, particularly V2：Just, V3:Low height, V4：Just.By V4
In the control loop of the power switch pipe for being connected on power management chip, interruption control loop can be played, the effect of switch-off power pipe,
Realize overtemperature protection.R4 introduces feedback, produces temperature hysteresis, prevents thermal oscillation.Thermal shutdown point temperature can pass through reasonable adjusting
R1, R2, the size setting of PTAT current, the size of temperature hysteresis can be by reasonable adjusting PTAT currents, and R4, R1, R2 are setting
It is fixed.
[second embodiment]
Below by taking the power management chip with manostat as an example, embodiments of the present invention are illustrated.
Fig. 2 is the circuit diagram of the overheating protection circuit of the preferred embodiment of the present invention and its voltage regulator circuit protected.
Present embodiment has overheating protection circuit and mu balanced circuit.Overheating protection circuit is by PTAT current source 201 and warm
Breaking circuit 200 is constituted.Mu balanced circuit is by voltage reference 205, error amplifier 202, power switch pipe 203, partial pressure feedback net
Network 204 is constituted.
201 structure of PTAT current source has：Npn transistor n1, n2；Pnp transistor p1, p2, p3, p4, p5；Resistance
R1,R2,R3,R4,R5,R6.N1 is diode type of attachment, and its base stage is connected with n2 base stages, grounded emitter, its colelctor electrode and
P1 colelctor electrodes are connected.N2 emitter stages are connected with resistance R1 wherein one end, R1 other ends ground connection, n2 colelctor electrodes and p2 colelctor electrode phases
Even.P1 base stages are connected with p2 base stages, and its emitter stage is connected with R2 wherein one end, and the R2 other ends are connected with supply voltage Vin.P2 is
Diode type of attachment, its emitter stage are connected with resistance R3 wherein one end, another terminations Vin of R3.P3, p4, p5 base stage and p1, p2
Base stage is connected.P3 emitter stages connect R4 wherein one end, another terminations Vin of R4.P4 emitter stages connect R5 wherein one end, another terminations of R5
Vin.P5 emitter stages connect R6 wherein one end, another terminations Vin of R6.
200 circuit structure of Thermal shutdown circuit has：Npn transistor n3, n4, n5, resistance R7, R8, R9, R10.R7 is wherein
One termination p3 colelctor electrodes, another termination R8 wherein one end, R8 other ends ground connection.N3 base stages are connected on p3 and R7 junctions, its current collection
Pole is connected with p4 colelctor electrodes, its grounded emitter.N4 base stages are connected on n3 and p4 junctions, and its colelctor electrode is connected with p5 colelctor electrodes,
Its grounded emitter.R10 wherein one end is connected with n4 colelctor electrodes, and the other end is connected with n5 base stages.N5 colelctor electrodes are amplified with error
The output of device (Error AMP) 202 is connected, its grounded emitter.R9 wherein ends are connected on the colelctor electrode of n4, another to terminate at R7
With the junction of R8.
Voltage regulator circuit structure has：202 positive input termination voltage reference 205 of error amplifier, negative input termination partial pressure are anti-
The feedback signal of feedback network 204.202 output connects the base stage of power switch pipe 203, and the colelctor electrode of power tube 203 meets Vin, sends out
Emitter-base bandgap grading connects partial pressure feedback network 204, and its emitter stage is the outfan of manostat.Potential-divider network is made up of resistance R11, R12.Constitute
One common linear regulator circuit.
The manostat overheating protection circuit of said structure has the function of carrying out following action to prevent circuit overheated：
PTAT current is produced by PTAT current source 201, because p1, p2 emitter area is equal, after circuit stability, is flow through
N1, n2 collector current is equal, but n2 emitter areas are more than n1 emitter areas, therefore produces the base with temperature proportional
Pole emitter voltage difference Δ VBE, which falls and produces PTAT current on resistance R1.P3, P4, P5 and P2 into current-mirror structure, according to sending out
Emitter area ratio replicates this PTAT current, provides current offset for Thermal shutdown circuit.PTAT current is used as temperature-sensitive element, sensing
Temperature change, samples it using resistance R7 and R8, temperature change is converted into change in voltage.During manostat normal work, R7 and
R8 pressure drop sums V1 are not enough to n3 conductings, now n3, the output V2 of n4, n5, V3, V4 difference：Height, it is low, it is high.Such Thermal shutdown pipe
N5 does not work, regulator control loop normal regulation circuit.When temperature reaches thermal shutdown temperature, V1 turns on n3, n3, n4, n5
Output V2, V3, V4 realize a series of upsets, particularly V2：Just, V3:Low height, V4：Just.Thermal shutdown n5 is opened
Open, interruption control loop can be played, overtemperature protection is realized in the effect of switch-off power pipe.R9 introduces feedback, produces temperature hysteresis,
Prevent thermal oscillation.Thermal shutdown point temperature can be by the dimension scale of rationally setting R1, R7, R8 size and n1, n2, p2, p3, p4
To set, the size of temperature hysteresis can be by rationally arranging p2, and p5 dimension scales and R1, R7, R8 size are setting.
Thermal shutdown temperature threshold point is derived below, can use below equation here
VT=kT/q (3)
Here ISIt is PN junction reverse saturation current, VbeIt is base-emitter voltage, VTIt is thermal voltage, c1It is one and temperature
Relevant constant, with ISDependence of the exponential term to temperature it is much smaller, therefore temperature can be ignored to c1Impact.Vg0It is 0K
When silicon extrapolation energy gap voltage.K is Boltzmann constant, and T is kelvin degree, and q is electronic charge.
When PTAT current source is stable, have
Vbe1=Vbe2+IC2R1 (4)
(4) are brought into by (1) formula, is had
Because p1, p2 are equivalently-sized, IC1=IC2If A1, A2 are respectively n1, the emitter area of n2 then hasThen have
IC2=IPTAT=VTlnN/R1 (6)
PTAT current needed for thereby producing.When temperature reaches thermal shutdown temperature, V1 turns on n3, the colelctor electrode of p4
Electric current flows through n3.Then by (1), (2), (6) formula, the collector current for obtaining n3 is
Wherein n=B4/B2, B2, B4 are respectively p2, the emitter area of p4, m=B3/B2, B3 is the transmitting pole-face of p3
Product.Thermal shutdown temperature T1 can be obtained by (3), (7) formula then is
Q, V in formula (8)g0, k is constant, as long as therefore appropriate design parameter, obtain it is largerSo thatIt is much larger thanThen turn off threshold temperature mainly withIt is relevant, and it is hardly dependent on resistance
Sheet resistance and temperature coefficient, IPTATThe change of size, supply voltage and technological parameter.
When Fig. 3 is that the overheating protection circuit in the preferred embodiment of the present invention plays a role, Thermal shutdown pipe V4 output voltages with
The schematic diagram of temperature change.The temperature hysteresis characteristic of the overheating protection circuit is shown in figure.When power switch pipe output electricity
Load is flow through, chip temperature persistently rises, when reaching thermal shutdown temperature T1, V4 is rapidly low, interruption voltage stabilizing control ring by high tumble
Road, switch-off power pipe.When power tube is forced shut-off, when chip temperature drops to T2, V4 is height by low upset rapidly, and power tube is extensive
It is multiple to turn on.T1＞ T2, both difference is temperature hysteresis, and sluggish size can be by rationally arranging IPTAT, p2, p5 size
Ratio and R1, R7, R8 size are setting.Specifically, IPTATBigger, p5, p2 dimension scale is more big, then flow through the electricity of R9
Stream is bigger, sluggish bigger；The ratio of R8 and R7 is bigger, sluggish bigger.
Used in embodiment of the present invention is all BJT transistors, is actually not limited to BJT transistors, such as PTAT
Current source, it is possible to use be operated in the metal-oxide-semiconductor of subthreshold region to realize；Electric current source capsule can also be used MOS instead to realize, n4, n5
Can be replaced with MOS, so that the circuit can be with compatible BCD techniques.
Claims (4)
1. a kind of overheating protection circuit, which is integrated in power management chip, carries out temperature detection and overtemperature protection to chip, its
It is characterised by, the overheating protection circuit has：
PTAT (Proportional To Absolute Temperature) current source, which is provided for Thermal shutdown circuit and temperature
Proportional current offset；
Thermal shutdown circuit, its detection temperature control opening and shutting off for Thermal shutdown pipe, when chip temperature reaches thermal shutdown temperature T1
When, Thermal shutdown pipe is opened, heat outputting cut-off signals (Thermal Shutdown Signal), is ended output pipe, is reached
Cooling and the effect of protection circuit, after the cut-off of output pipe, temperature begins to decline, but Thermal shutdown pipe is not immediately turned off, its
Again temperature T2 for turning off has a fixed temperature poor (i.e. with certain temperature hysteresis) with thermal shutdown temperature T1, works as temperature drop
During to T2, Thermal shutdown pipe is just turned off, and power switch pipe is turned on again.
2. the overheating protection circuit according to claims 1, it is characterised in that
The PTAT current source has：Current source I1, I2, I3, flow through their electric current for PTAT current；
Current source I1, I2, I3 upper end is connected with supply voltage Vin, and I1 lower ends are connected with resistance R1 upper ends, I2 lower ends and transistor
The colelctor electrode of n1 is connected, and I3 lower ends are connected with the colelctor electrode of transistor n2, if the current source generative circuit of power management chip
There is PTAT current in the electric current of generation, then directly can replicate that I1, I2, I3 are produced by current-mirror structure, if not ready-made
PTAT current, then a PTAT current can be produced by the circuit structure 201 being similar in Fig. 2, it is then multiple by current mirror
I1, I2, I3 is obtained；
The Thermal shutdown circuit has：Resistance R1, R2, R3, R4, NPN transistor n1, n2, n3, R1 lower end and R2 upper ends phase
Even, R2 lower ends ground connection, the base stage of n1 are connected to I1 and R1 junctions, n1 grounded emitters, the base stage of n2 and the colelctor electrode phase of n1
Even, n2 grounded emitters, R3 one end is connected with n2 colelctor electrodes, and the other end is connected with n3 base stages, and R4 one end is connected with n2 colelctor electrodes,
The other end is connected to R1 and R2 junctions, n3 grounded emitters, its colelctor electrode heat outputting cut-off signals (Thermal Shutdown
Signal), generally it is connected with the outfan of the error amplifier in manostat, resistance R1, R2, R3, R4 are Low Drift Temperature resistance, warm
Degree coefficient is identical, and PTAT current flows through the R1 and R2 of series connection, therefore pressure drop sum V1 and temperature proportional on R1 and R2, and PTAT is electric
Flow and be regarded as a temperature-sensing element (device) here, the change of detection temperature, when temperature is normal, V1 is insufficient to allow n1 to turn on, because
The colelctor electrode output voltage V2 of this n1 is height, then n2 conductings, and its colelctor electrode output voltage V3 is low, then Thermal shutdown pipe n3 is in and closes
Disconnected state, overheat protective function are not turned on, and temperature is raised, and V1 increases therewith, and when temperature reaches thermal shutdown temperature T1, V1 makes n1
Conducting, then V2 upsets are low, n2 cut-offs, then V3 overturns and turns on for height, therefore Thermal shutdown pipe n3, and overheat protective function is opened, this
Shi Yinwei n2 end, and PTAT current I3 feeds back to R1 and R2 junctions by R4, introduce temperature hysteresis so that temperature drop to T2
When, Thermal shutdown pipe is just turned off again, and R3 is connected on the base stage of n3, prevents from flowing through n3 base currents as steady resistance excessive.
3. the overheating protection circuit according to claims 1, it is characterised in that
The PTAT current source, can be produced by the circuit structure 201 in preferred embodiment Fig. 2, and which has：NPN transistor
n1,n2；PNP transistor p1, p2, p3, p4, p5；Resistance R1, R2, R3, R4, R5, R6, wherein n1 are diode type of attachment,
And its base stage is connected with n2 base stages, grounded emitter, colelctor electrode are connected with p1 colelctor electrodes, n2 emitter stages and resistance R1 wherein
End is connected, R1 other ends ground connection, and n2 colelctor electrodes are connected with p2 colelctor electrodes, and p1 base stages are connected with p2 base stages, its emitter stage and R2 its
Middle one end is connected, and the R2 other ends are connected with supply voltage Vin, and p2 is diode type of attachment, and its emitter stage is with resistance R3 wherein
One end is connected, another terminations Vin of R3, and p3, p4, p5 base stage and p1, p2 base stage are connected, and p3 emitter stages connect R4 wherein one end, and R4 is another
One termination Vin, p4 emitter stages connect R5 wherein one end, another terminations Vin of R5, and p5 emitter stages connect R6 wherein one end, another terminations of R6
Vin；
The Thermal shutdown circuit, can be made up of circuit structure in Fig. 2 200, and which has：NPN transistor n3, n4, n5, resistance
R7, R8, R9, R10, R7 wherein one terminate p3 colelctor electrodes, and another termination R8 wherein one end, R8 other ends ground connection, n3 base stages are connected on
P3 and R7 junctions, its colelctor electrode are connected with p4 colelctor electrodes, and its grounded emitter, n4 base stages are connected on n3 and p4 junctions, its collection
Electrode is connected with p5 colelctor electrodes, its grounded emitter, and R10 wherein one end is connected with n4 colelctor electrodes, and the other end is connected with n5 base stages,
N5 colelctor electrodes are connected with the output of error amplifier (Error AMP), its grounded emitter, and R9 wherein ends are connected on the current collection of n4
Pole, another junction for terminating at R7 and R8；
The 202 positive input termination voltage reference Vref of error amplifier in Fig. 2 preferred embodiments, negative input termination potential-divider network
204 feedback signal, the base stage of the output termination power switch pipe 203 of Error AMP, the colelctor electrode of power tube 203 connect power supply
Voltage Vin, is launched extremely output end vo ut and is connected with resistance pressure-dividing network 204, and potential-divider network is by resistance R11, R12 structures
Into, the voltage reference Vref, error amplifier 202, power switch pipe 203, potential-divider network 204, constitute one it is common
Linear regulator circuit.
4. the overheating protection circuit according to claims 3, it is characterised in that
The PTAT current source has：P1, p2 emitter area is equal, R2, and R3 resistances are equal, so n1 and n2 after circuit stability
Collector current is equal, and n2 emitter areas are more than n1 emitter areas, from the current equation of audion, n1 and n2 bases
There is a difference in pole-emitter voltage, this difference falls on resistance R1, and generation is proportional to the PTAT current of temperature, p3,
P4, p5 and p2 constitute the ratio of current mirror, R4, R5, R6 resistance and R3 resistances and are respectively equal to p3, p4, p5 emitter area and p2
The ratio of emitter area, this ratio determine the proportionate relationship of p3, p4, p5 place branch current and PTAT current, R1～R6
All it is Low Drift Temperature resistance and resistance type is identical；
The Thermal shutdown circuit, it is consistent with the feature of Thermal shutdown in claims 2, it is the label difference of each components and parts,
Here do not repeat.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611190694.5A CN106532655A (en) | 2016-12-21 | 2016-12-21 | Overheat protection circuit in power management chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611190694.5A CN106532655A (en) | 2016-12-21 | 2016-12-21 | Overheat protection circuit in power management chip |
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| CN201611190694.5A Pending CN106532655A (en) | 2016-12-21 | 2016-12-21 | Overheat protection circuit in power management chip |
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Cited By (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108469868A (en) * | 2018-06-07 | 2018-08-31 | 博为科技有限公司 | Temperature self-adaptation current source and optical module |
| CN108725205A (en) * | 2018-07-28 | 2018-11-02 | 朱景艳 | The electric vehicle charging control circuit of relay modified overheating protection |
| CN109245051A (en) * | 2018-08-28 | 2019-01-18 | 出门问问信息科技有限公司 | A kind of supply convertor |
| CN109347063A (en) * | 2018-11-30 | 2019-02-15 | 武汉精能电子技术有限公司 | A kind of power device overheating detection protection circuit |
| CN112462837A (en) * | 2020-09-27 | 2021-03-09 | 江苏东海半导体科技有限公司 | Three-terminal stabilizing circuit overheat protection unit and three-terminal voltage stabilizing circuit |
| CN113220062A (en) * | 2021-05-08 | 2021-08-06 | 西安微电子技术研究所 | Over-temperature protection circuit of bipolar linear voltage stabilizer |
-
2016
- 2016-12-21 CN CN201611190694.5A patent/CN106532655A/en active Pending
Cited By (8)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN108469868A (en) * | 2018-06-07 | 2018-08-31 | 博为科技有限公司 | Temperature self-adaptation current source and optical module |
| CN108725205A (en) * | 2018-07-28 | 2018-11-02 | 朱景艳 | The electric vehicle charging control circuit of relay modified overheating protection |
| CN108725205B (en) * | 2018-07-28 | 2021-06-15 | 深圳市恒创兴电子科技有限公司 | Electric automobile charging control circuit with improved relay for overheat protection |
| CN109245051A (en) * | 2018-08-28 | 2019-01-18 | 出门问问信息科技有限公司 | A kind of supply convertor |
| CN109347063A (en) * | 2018-11-30 | 2019-02-15 | 武汉精能电子技术有限公司 | A kind of power device overheating detection protection circuit |
| CN109347063B (en) * | 2018-11-30 | 2024-03-15 | 武汉精能电子技术有限公司 | Overheat detection protection circuit of power device |
| CN112462837A (en) * | 2020-09-27 | 2021-03-09 | 江苏东海半导体科技有限公司 | Three-terminal stabilizing circuit overheat protection unit and three-terminal voltage stabilizing circuit |
| CN113220062A (en) * | 2021-05-08 | 2021-08-06 | 西安微电子技术研究所 | Over-temperature protection circuit of bipolar linear voltage stabilizer |
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Application publication date: 20170322 |