CN106531757A - MEMS environmental sensor - Google Patents
MEMS environmental sensor Download PDFInfo
- Publication number
- CN106531757A CN106531757A CN201611239543.4A CN201611239543A CN106531757A CN 106531757 A CN106531757 A CN 106531757A CN 201611239543 A CN201611239543 A CN 201611239543A CN 106531757 A CN106531757 A CN 106531757A
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- Prior art keywords
- substrate
- mems
- chip
- asic chip
- cavity
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
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Links
- 230000007613 environmental effect Effects 0.000 title claims abstract description 37
- 239000000758 substrate Substances 0.000 claims abstract description 85
- 238000004806 packaging method and process Methods 0.000 claims abstract description 18
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims abstract description 3
- 241000218202 Coptis Species 0.000 claims description 12
- 235000002991 Coptis groenlandica Nutrition 0.000 claims description 12
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 8
- 229910052710 silicon Inorganic materials 0.000 claims description 8
- 239000010703 silicon Substances 0.000 claims description 8
- 229910000679 solder Inorganic materials 0.000 claims description 4
- 239000003292 glue Substances 0.000 claims description 3
- 239000010931 gold Substances 0.000 claims description 2
- 229910052737 gold Inorganic materials 0.000 claims description 2
- 229910052751 metal Inorganic materials 0.000 abstract description 12
- 239000002184 metal Substances 0.000 abstract description 12
- 150000001875 compounds Chemical class 0.000 abstract 1
- 238000000465 moulding Methods 0.000 abstract 1
- 238000005516 engineering process Methods 0.000 description 4
- 238000005260 corrosion Methods 0.000 description 3
- 230000007797 corrosion Effects 0.000 description 3
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 229910052782 aluminium Inorganic materials 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 230000000694 effects Effects 0.000 description 2
- 238000005538 encapsulation Methods 0.000 description 2
- 238000003780 insertion Methods 0.000 description 2
- 230000037431 insertion Effects 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 239000005022 packaging material Substances 0.000 description 2
- 238000012856 packing Methods 0.000 description 2
- 238000003466 welding Methods 0.000 description 2
- 239000000853 adhesive Substances 0.000 description 1
- 230000001070 adhesive effect Effects 0.000 description 1
- 230000009286 beneficial effect Effects 0.000 description 1
- 238000005253 cladding Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 238000003487 electrochemical reaction Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 229910052736 halogen Inorganic materials 0.000 description 1
- 150000002367 halogens Chemical class 0.000 description 1
- 230000010354 integration Effects 0.000 description 1
- 230000007774 longterm Effects 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 1
- 238000002360 preparation method Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
- 238000003860 storage Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/14—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
- H01L27/144—Devices controlled by radiation
- H01L27/146—Imager structures
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/02—Containers; Seals
- H01L23/04—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls
- H01L23/043—Containers; Seals characterised by the shape of the container or parts, e.g. caps, walls the container being a hollow construction and having a conductive base as a mounting as well as a lead for the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L23/00—Details of semiconductor or other solid state devices
- H01L23/28—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection
- H01L23/31—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape
- H01L23/3107—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed
- H01L23/3114—Encapsulations, e.g. encapsulating layers, coatings, e.g. for protection characterised by the arrangement or shape the device being completely enclosed the device being a chip scale package, e.g. CSP
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16245—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/42—Wire connectors; Manufacturing methods related thereto
- H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
- H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
- H01L2224/4805—Shape
- H01L2224/4809—Loop shape
- H01L2224/48091—Arched
Abstract
The invention discloses an MEMS environmental sensor, which comprises a substrate, an MEMS chip, an ASIC chip and a plastic packaging shell, wherein the ASIC chip is fixed on the substrate; a hollow cavity is arranged in one side, close to the substrate, of the ASIC chip; the MEMS chip is located in the hollow cavity and connected to the substrate; a through hole is formed in the position, corresponding to the hollow cavity, of the substrate; the ASIC chip is in conductive connection with the substrate through a gold wire; and the plastic packaging shell coats the outside of the ASIC chip. It is thus clear that the MEMS chip is located in the hollow cavity of the ASIC chip and can only communicate with the outside through the through hole in the substrate. Therefore, the MEMS chip is protected, the ASIC chip is surrounded from the outside through a molding compound, the ASIC chip and a metal bonding structure are also prevented from being affected by the external environment and the MEMS chip is protected through the ASIC chip during plastic packaging. Furthermore, due to the adoption of the plastic packaging shell, the MEMS environmental sensor can coat the ASIC chip and the packaging size is reduced, thereby reducing the volume of the MEMS environmental sensor.
Description
Technical field
The present invention relates to MEMS chip encapsulation technology field, more particularly to a kind of MEMS environmental sensors.
Background technology
The English full name of MEMS is Micro-Electro-Mechanical System, and Chinese is MEMS,
Size is referred in several millimeters even more little of high-tech device, its internal structure in micron even nanometer scale, is typically one
Independent intelligence system.MEMS technology because there is miniaturization, intelligent, Highgrade integration and can be mass, extensively
It is general to be applied to the fields such as electronics, medical science, industry, automobile and aerospace system.
Existing MEMS environmental sensors, such as MEMS microphone, MEMS barometers, MEMS Hygrothermographs, MEMS gases are passed
Sensor etc., mainly including encapsulating structure, MEMS chip and asic chip, wherein, pcb board and metal shell are adopted encapsulating structure more
The packing forms of combination, perforate on metal shell, for interacting with external environment variable, MEMS chip and asic chip set
Put in encapsulating structure, MEMS chip is overlayed on asic chip, or MEMS chip and asic chip are disposed side by side on pcb board
On.As the conventional aluminum of chip is used as welding block, used as bonding wire, both materials are in the environment that hot and humid and halogen is present for copper cash
Being susceptible to electrochemical reaction causes weld failure.Existing this packing forms due to make chip with the external world contact, be unfavorable for into
Row copper/aluminum is good for the protection for closing structure, it is possible to affect product in the hot and humid long-term reliability waited under environment, meanwhile, it is this
Encapsulating structure volume is larger, it is difficult to realize the very small dimensions encapsulation of the chip level of environmental sensor.
In sum, the strong volume closed structure, reduce MEMS environmental sensors of metal of chip how is protected, becomes this
Art personnel technical problem urgently to be resolved hurrily.
The content of the invention
In view of this, it is an object of the invention to provide a kind of MEMS environmental sensors, to protect, the metal of chip is strong to be closed
Structure, reduces the volume of MEMS environmental sensors.
To reach above-mentioned purpose, the present invention provides technical scheme below：
A kind of MEMS environmental sensors, including substrate, MEMS chip and asic chip；The asic chip is fixed on described
On substrate, the asic chip is provided with cavity near the side of the substrate；The MEMS chip is located in the cavity, and
The MEMS chip is connected on the substrate；The position of the corresponding cavity of the substrate offers through hole；The ASIC
Chip is connected with the substrate conducting by gold thread；The plastic packaging housing being also coated on outside the asic chip.
Preferably, in above-mentioned MEMS environmental sensors, the MEMS chip upside-down mounting is in the cavity and described
MEMS chip is welded with the substrate conducting near the side of the substrate.
Preferably, in above-mentioned MEMS environmental sensors, the MEMS chip is just loaded in the cavity and described
MEMS chip is connected with the substrate conducting away from the side of the substrate, the MEMS chip near the side of the substrate with
The substrate is fixedly connected.
Preferably, in above-mentioned MEMS environmental sensors, the MEMS chip is provided with silicon hole, the MEMS chip
It is welded to connect with the substrate conducting by the conductive pole in the silicon hole away from the side of the substrate.
Preferably, in above-mentioned MEMS environmental sensors, the MEMS chip passes through gold away from the side of the substrate
Line is connected with the substrate conducting, and the MEMS chip is fixed with the substrate bonding near the side of the substrate.
Preferably, in above-mentioned MEMS environmental sensors, the asic chip is bonded and fixed to described by glue
On substrate.
Preferably, in above-mentioned MEMS environmental sensors, the cavity described in insertion asic chip perpendicular to institute
State the open spaces of two opposite flanks of substrate.
Preferably, in above-mentioned MEMS environmental sensors, the cavity is to be arranged on the asic chip near described
The depression closing space of the side of substrate.
Compared with prior art, the invention has the beneficial effects as follows：
In the MEMS environmental sensors that the present invention is provided, asic chip is fixed on substrate, and asic chip is near substrate
Side is provided with cavity, and MEMS chip is located in the cavity, and MEMS chip is connected on substrate, only in substrate correspondence cavity
Position opens up through hole, and the outside of asic chip is coated with plastic packaging housing, by the gold thread of connection asic chip and substrate also plastic packaging
Cladding is got up.It can be seen that, MEMS chip is located in the cavity of asic chip, can only be in communication with the outside by the through hole on substrate,
Therefore, MEMS chip is protected, asic chip is surrounded by plastic packaging material in the outside of asic chip, equally protect ASIC cores
Piece and the strong structure of closing of metal are free from the influence of the external environment, and when plastic packaging is carried out, protect MEMS chip by asic chip.And
And, as a result of plastic packaging housing, packaging cost is reduced than conventional metal shell, and can be coated on asic chip, is subtracted
Little package dimension, and then reduce the volume of MEMS environmental sensors.
Description of the drawings
In order to be illustrated more clearly that the embodiment of the present invention or technical scheme of the prior art, below will be to embodiment or existing
Accompanying drawing to be used needed for having technology description is briefly described, it should be apparent that, drawings in the following description are only this
Inventive embodiment, for those of ordinary skill in the art, on the premise of not paying creative work, can be with basis
The accompanying drawing of offer obtains other accompanying drawings.
Fig. 1 is a kind of structural representation of MEMS environmental sensors provided in an embodiment of the present invention；
Fig. 2 is the structural representation of another kind of MEMS environmental sensors provided in an embodiment of the present invention.
Wherein, 1 be plastic packaging housing, 2 be asic chip, 201 be cavity, 3 be gold thread, 4 be substrate, 401 be through hole, 5
For bonded adhesives, 6 be soldered ball, 7 be MEMS chip, 701 be silicon hole.
Specific embodiment
The core of the present invention there is provided a kind of MEMS environmental sensors, while protecting the metal of chip to be good for conjunction structure,
Reduce the volume of MEMS environmental sensors.
Below in conjunction with the accompanying drawing in the embodiment of the present invention, the technical scheme in the embodiment of the present invention is carried out clear, complete
Site preparation is described, it is clear that described embodiment is only a part of embodiment of the invention, rather than the embodiment of whole.It is based on
Embodiment in the present invention, it is every other that those of ordinary skill in the art are obtained under the premise of creative work is not made
Embodiment, belongs to the scope of protection of the invention.
Fig. 1 and Fig. 2 is refer to, a kind of MEMS environmental sensors, including substrate 4, MEMS cores is embodiments provided
Piece 7, asic chip 2 and plastic packaging housing 1；Wherein, asic chip 2 is fixed on substrate 4, and asic chip 2 is near the side of substrate 4
It is provided with cavity 201；MEMS chip 7 is located in cavity 201, and MEMS chip 7 is connected on substrate 4；4 corresponding cavity of substrate
201 position offers through hole 401, enters in cavity 201 for external environment condition variable, interacts with MEMS chip 7；
Asic chip 2 is conductively connected with substrate 4 by gold thread 3；Plastic packaging housing 1 is coated on outside asic chip 2 by plastic package process plastic packaging
Portion.
In above-mentioned MEMS environmental sensors, MEMS chip 7 is located in the cavity 201 of asic chip 2, can only pass through substrate 4
On through hole 401 be in communication with the outside, therefore, protect MEMS chip 7, the outside of asic chip 2 by plastic packaging material will
Asic chip 2 is surrounded, and is equally protected asic chip 2 and the strong structure of closing of metal free from the influence of the external environment, and is being moulded
Feng Shi, the MEMS chip 7 in cavity 201 are subject to protecting for asic chip 2.Also, as a result of plastic packaging housing 1, envelope
Dress up this lower than conventional metal shell, and can be coated on asic chip 2, plastic packaging housing 1 need not with asic chip 2 it
Between there is spacing, it therefore reduces package dimension, and then reduce the volume of MEMS environmental sensors.
In order to further reduce corrosion of the external environment to MEMS chip 7, protection metal is strong to close structure, and reduces body
Product, in the present embodiment, as shown in Fig. 27 upside-down mounting of MEMS chip is in cavity 201, and MEMS chip 7 is near the side of substrate 4
With 4 conductive solder of substrate.The gold thread for being conductively connected is eliminated, but directly by the electrical connection area of MEMS chip 7 by weldering
Connect and be conductively connected with substrate 4, welded by soldered ball 6, be conductively connected it is relatively reliable, it is corrosion-resistant.Simultaneously as gold thread is eliminated,
Therefore, it can save the space of storage gold thread, reduce volume.Wherein, 7 upside-down mounting of MEMS chip refers to the base of MEMS chip 7
Seat is away from substrate 4.
Certainly, MEMS chip 7 just can also be loaded in cavity 201, and MEMS chip 7 is away from side and the substrate 4 of substrate 4
It is conductively connected, MEMS chip 7 is fixedly connected with substrate 4 near the side of substrate 4.Wherein, 7 formal dress of MEMS chip refers to MEMS
The pedestal of chip 7 is near substrate 4.
When MEMS chip 7 is just loaded in cavity 201, in order to further reduce external environment to MEMS chip 7
Corrosion, protection metal is strong to close structure, and reduces volume, in the present embodiment, as shown in figure 1, MEMS chip 7 is provided with silicon
Through hole 701, MEMS chip 7 are connected with 4 conductive solder of substrate by the conductive pole in silicon hole 701 away from the side of substrate 4
Connect.Can equally save for conductive gold thread, conductive conductive pole will be used for and be built in silicon hole 701, it is to avoid its with
Extraneous contact, so as to protect conductive pole not corroded.Conductive pole can be welded with substrate 4 by soldered ball 6.
Certainly, 7 formal dress mode of another kind of MEMS chip is that MEMS chip 7 passes through gold thread and substrate away from the side of substrate 4
4 are conductively connected, and MEMS chip 7 is adhesively fixed with substrate 4 near the side of substrate 4.It is that the conductive connection manner can not be saved
Gold thread, gold thread protected effect is not so good as inverted structure or the effect that is conductively connected by conductive pole is good, further can not reduce
The volume of MEMS environmental sensors.
In the present embodiment, asic chip 2 is bonded and fixed on substrate 4 by glue 5, convenient and swift.In addition,
Asic chip 2 can also be connected on substrate 4 by welding, threaded connector etc..
The present embodiment does to the structure of cavity and further optimizes, and cavity 201 is insertion asic chip 2 perpendicular to substrate 4
Two opposite flanks open spaces.That is the generally concave shape structure of asic chip 2.The cutting perpendicular to substrate 4 of cavity 201
Face is shaped as arbitrary shape, such as trapezoidal, rectangle, semicircle etc., as long as MEMS chip 7 can be housed.
201 structure of another kind of cavity is present embodiments provided, and cavity 201 is asic chip 2 to be arranged near the one of substrate 4
The depression closing space of side.That is the opening of cavity 201 is positioned only at asic chip 2 near the side of substrate 4.Such cavity knot
Structure is enclosed in MEMS chip 7 in cavity, when plastic package process is carried out, during asic chip 2 can preferably protect cavity 201
MEMS chip 7.
In this specification, each embodiment is described by the way of progressive, and what each embodiment was stressed is and other
The difference of embodiment, between each embodiment identical similar portion mutually referring to.
The foregoing description of the disclosed embodiments, enables professional and technical personnel in the field to realize or using the present invention.
Various modifications to these embodiments will be apparent for those skilled in the art, as defined herein
General Principle can be realized without departing from the spirit or scope of the present invention in other embodiments.Therefore, the present invention
The embodiments shown herein is not intended to be limited to, and is to fit to and principles disclosed herein and features of novelty phase one
The most wide scope for causing.
Claims (8)
1. a kind of MEMS environmental sensors, including substrate (4), MEMS chip (7) and asic chip (2)；Characterized in that, described
Asic chip (2) is fixed on the substrate (4), and the asic chip (2) is provided with cavity near the side of the substrate (4)
(201)；The MEMS chip (7) is in the cavity (201), and the MEMS chip (7) is connected to the substrate (4)
On；The position of the corresponding cavity (201) of the substrate (4) offers through hole (401)；The asic chip (2) is by gold
Line (3) is conductively connected with the substrate (4)；The outside plastic packaging housing (1) of the asic chip (2) is coated on also.
2. MEMS environmental sensors according to claim 1, it is characterised in that the MEMS chip (7) upside-down mounting is in described
In cavity (201), and the MEMS chip (7) is near the side of the substrate (4) and the substrate (4) conductive solder.
3. MEMS environmental sensors according to claim 1, it is characterised in that the MEMS chip (7) is just loaded on described
In cavity (201), and the MEMS chip (7) is conductively connected with the substrate (4) away from the side of the substrate (4), described
MEMS chip (7) is fixedly connected with the substrate (4) near the side of the substrate (4).
4. MEMS environmental sensors according to claim 3, it is characterised in that the MEMS chip (7) is provided with silicon and leads to
Hole (701), the MEMS chip (7) away from the substrate (4) side by the conductive pole in the silicon hole (701)
It is connected with the substrate (4) conductive solder.
5. MEMS environmental sensors according to claim 3, it is characterised in that the MEMS chip (7) is away from the substrate
(4) side is conductively connected with the substrate (4) by gold thread, the MEMS chip (7) near the substrate (4) side with
The substrate (4) is adhesively fixed.
6. MEMS environmental sensors according to claim 1, it is characterised in that the asic chip (2) is by glue
(5) it is bonded and fixed on the substrate (4).
7. MEMS environmental sensors according to any one of claim 1-6, it is characterised in that the cavity (201) is to pass through
Lead to the open spaces of two opposite flanks perpendicular to the substrate (4) of the asic chip (2).
8. MEMS environmental sensors according to any one of claim 1-6, it is characterised in that the cavity (201) is to set
Put the depression closing space near the side of the substrate (4) in the asic chip (2).
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611239543.4A CN106531757B (en) | 2016-12-28 | 2016-12-28 | MEMS environmental sensor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201611239543.4A CN106531757B (en) | 2016-12-28 | 2016-12-28 | MEMS environmental sensor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN106531757A true CN106531757A (en) | 2017-03-22 |
| CN106531757B CN106531757B (en) | 2019-06-11 |
Family
ID=58339048
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201611239543.4A Active CN106531757B (en) | 2016-12-28 | 2016-12-28 | MEMS environmental sensor |
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| Country | Link |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110104606A (en) * | 2019-05-08 | 2019-08-09 | 苏州新沃微电子有限公司 | A kind of encapsulating structure of MEMS infrared sensor |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130075888A1 (en) * | 2011-09-22 | 2013-03-28 | Siliconware Precision Industries Co., Ltd. | Semiconductor package and method of fabricating the same |
| CN203748007U (en) * | 2014-04-01 | 2014-07-30 | 山东共达电声股份有限公司 | MEMS microphone and electronic device |
| CN104484660A (en) * | 2014-12-31 | 2015-04-01 | 华天科技（西安）有限公司 | Chip-integrated fingerprint identification sensor and manufacturing method thereof |
| CN205619946U (en) * | 2016-02-25 | 2016-10-05 | 歌尔股份有限公司 | Environmental sensor chip package structure |
-
2016
- 2016-12-28 CN CN201611239543.4A patent/CN106531757B/en active Active
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20130075888A1 (en) * | 2011-09-22 | 2013-03-28 | Siliconware Precision Industries Co., Ltd. | Semiconductor package and method of fabricating the same |
| CN203748007U (en) * | 2014-04-01 | 2014-07-30 | 山东共达电声股份有限公司 | MEMS microphone and electronic device |
| CN104484660A (en) * | 2014-12-31 | 2015-04-01 | 华天科技（西安）有限公司 | Chip-integrated fingerprint identification sensor and manufacturing method thereof |
| CN205619946U (en) * | 2016-02-25 | 2016-10-05 | 歌尔股份有限公司 | Environmental sensor chip package structure |
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| CN110104606A (en) * | 2019-05-08 | 2019-08-09 | 苏州新沃微电子有限公司 | A kind of encapsulating structure of MEMS infrared sensor |
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| Publication number | Publication date |
|---|---|
| CN106531757B (en) | 2019-06-11 |
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Effective date of registration: 20200615 Address after: 266104 room 103, 396 Songling Road, Laoshan District, Qingdao, Shandong Province Patentee after: Goer Microelectronics Co.,Ltd. Address before: 261031 Dongfang Road, Weifang high tech Industrial Development Zone, Shandong, China, No. 268 Patentee before: GOERTEK Inc. |
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