CN106531708A - 具有两件式壳体的功率半导体模块 - Google Patents

具有两件式壳体的功率半导体模块 Download PDF

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CN106531708A
CN106531708A CN201610811725.8A CN201610811725A CN106531708A CN 106531708 A CN106531708 A CN 106531708A CN 201610811725 A CN201610811725 A CN 201610811725A CN 106531708 A CN106531708 A CN 106531708A
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power semiconductor
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cooling body
semiconductor modular
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CN106531708B (zh
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J·克鲁格曼
C·梅塞克
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Infineon Technologies AG
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Abstract

本发明涉及一种功率半导体模块，用于布置在冷却体上，该功率半导体模块具有：至少一个衬底，具有用于朝向该冷却体布置的并且用于与该冷却体能导热地连接的确定的第一侧；至少一个功率半导体元件，布置在该衬底的与该第一侧对置的第二侧上；和电绝缘的壳体，该壳体限定空腔，该衬底和该至少一个功率半导体元件被容纳在该空腔中；其中该壳体具有以框架方式包围该至少一个衬底的框架和利用固定件固定在该冷却体上的罩，其中该罩具有至少一个设置用于贴靠在该衬底上的压模，以便至少在将该功率半导体模块固定在该冷却体上时通过该罩并且通过该至少一个压模将该衬底弹性地朝相对于该冷却体张紧；其中框架形状配合地容纳该衬底和/或固定在该衬底上。

Description

具有两件式壳体的功率半导体模块
技术领域
本发明描述一种功率半导体模块，其具有有源和/或无源元件、特别是变流器模块。这种功率半导体模块多次从文献中已知。在提高有效功率、可靠性以及使用寿命同时减少制造成本的情况下，改变用于各个部件的构造技术的方法是强制的前提。
背景技术
现今的功率半导体模块(为本发明的出发点)是无基板的模块。该模块一般具有壳体、陶瓷衬底、借助于钎焊技术形状配合地安装在所述衬底上的元件例如二极管、晶体管、电阻或传感器以及键合连接，所述陶瓷衬底具有布置在其上的符合电路设计的金属覆盖层，例如所述金属覆盖层例如根据DCB(direct copper bonding直接铜键合)方法制造，所述键合连接用于将芯片式不设罩的功率半导体元件的结构化的侧与另外的元件和/或衬底和/或向外引导的接头元件连接。
此外，优选地设置由硅酮橡胶构成的注塑材料用于使各个元件彼此绝缘。
衬底和冷却体之间的热传递对于功率半导体模块而言是直接确定所述功率半导体模块的有效功率的重要参量。因此，在运行期间由功率半导体元件产生的热量必须尽可能高效地导出。
要指明的是，特别是大面积的至冷却体的钎焊连接只能在极难符合质量的情况下完成，在这种情况下损害了功率半导体模块的可靠性以及使用寿命。因此利用压力接触以使模块与冷却体导热地连接的构造技术对于这种功率半导体模块而言表明是非常有利的。
由DE 10 2004 051 039 A1公知了一种功率半导体模块，其盖件一方面用于压力传导以及也用于将压力施加到功率半导体模块的线粘合连接的粘合底脚上。此外，现有技术在此描述并且指明，其中，壳体盖形成凸模，利用所述凸模将衬底压向冷却体。在此，压力传导非常难调节并且可能导致损坏衬底或者不可靠地建立接触。
发明内容
本发明的目的在于，提供一种下述的模块，所述模块可以在很大程度上已预安装地交付并且在根据需要的安装位置上无需预安装步骤的情况下尽可能地只需安装在冷却体上。
为此需要在同时将热量高效地从功率半导体模块传递到冷却体的情况下改善地简化地安装功率半导体模块。该目的通过根据权利要求1所述的功率半导体模块实现。有利的构造方案分别是从属权利要求的内容。要指明的是，在权利要求中单独地实施的特征能够以任意的、技术上有意义的方式彼此组合并且示出本发明的其他构造方案。所述说明特别是结合附图附加地表征并且规定本发明。
本发明涉及一种用于布置在冷却体上的功率半导体模块。所述模块具有至少一个衬底。所述衬底具有用于朝向冷却体布置的并且用于与冷却体能导热地连接的确定的第一侧。优选地，所述衬底是陶瓷衬底、优选地由AL2O3、AIN、Si3n4构成的衬底。
衬底例如以例如由铜构成的金属层涂覆。优选地，第一侧完全以金属层覆盖。
根据本发明的功率半导体模块包括布置在衬底的与第一侧对置的第二侧上的功率半导体元件、优选地无壳体的功率半导体元件。所述功率半导体元件例如是半导体开关、例如IGBT、MOSFET或二极管或者其组合。优选地设置多个、例如两个或三个功率半导体元件。
根据本发明的功率半导体模块具有电绝缘的壳体，所述壳体限定空腔，衬底和至少一个功率半导体元件被容纳在所述空腔中。
此外，根据本发明设置一个电绝缘的壳体。所述壳体至少部分地由塑料制造，例如由热塑性塑料、热固塑料或者纤维强化的、优选地玻璃纤维强化的塑料制造。壳体例如以成型方法、例如注射成型方法制造。衬底和至少一个功率半导体元压模件被容纳在所述壳体中，其中，在任何情况下将用于电接触功率半导体元件的负载接头和/或控制接头的一个或多个接触区段布置在壳体的外部。壳体例如设置有穿孔，以便使负载接头和/或控制接头穿过所述穿孔布置。
优选地，所述壳体具有以框架方式包围至少一个衬底的框架和利用固定件固定在冷却体上的罩。根据本发明，所述罩具有至少一个设置用于贴靠在衬底上的压模，以便在将功率半导体模块固定在冷却体上时通过所述罩并且通过至少一个压模将衬底弹性地朝相对于冷却体张紧。优选地，压模和所述罩构造为一件式的。通过弹性的张紧实现将热量从衬底高效地传递到冷却体并且也例如在拆卸和固定模块时还被确保。弹性的张紧可以例如通过所述罩的造型和材料来预定。
优选地设置，所述罩设计为搭接(übergreifend)所述框架，其中所述罩例如力配合地或者至少形状配合地容纳所述框架。因此，衬底通过所述罩来保护。此外，由此实现了一个构造方案，其中，首先通过固定所述罩，通过所述罩将框架同样固定在冷却体上，而不需要框架和冷却体之间附加的固定件。
根据本发明的功率半导体模块的特别之处在于，例如通过形状配合或力配合将所述框架固定在至少一个衬底上，和/或将衬底形状配合地容纳在框架中。因此，达到了预安装的程度，所述预安装的程度使安装本身加速，然而同时通过框架的保护作用减小了机械损害衬底的危险。通过包围多个衬底的框架简化了多个衬底在冷却体上的相对定向，因为在固定步骤中能够利用相对少的固定件来固定多个衬底。
优选地设置，框架和衬底力配合地连接。例如框架与衬底粘接。
根据一个优选的构造方案，压模弹性弯曲地固定在所述罩上。
为了实现高效的弹性的张紧，压模相对于所述罩和衬底之间的对应的内部净宽的间距具有过盈。
根据一个优选的构造方案设置，所述罩通过一个或多个突出的支承件在压模的张紧方向上支撑在框架上。所述支承件例如与框架或所述罩一件式地构造。在一个实施方式中通过支承件的构造方案和定位例如实现了，在完成安置的固定所述罩时将压模的预应力限制到最大力。根据一个优选的构造方案，支承件的构造方案和定位确保了，在所述罩未固定时，压模在任何情况下活动地放置在衬底上，并且在将所述罩固定在冷却体上之后，通过所述罩的弹性弯曲通过所述罩在止挡部上弯曲成弯边来调节由压模产生的预应力。
优选地，为了将压模弹性弯曲地支承在所述罩上，在所述罩中设置至少一个材料减弱部。材料减弱部在本发明的意义中是指例如通过壳体壁中的凹进部或狭槽使材料强度降低。狭槽可以是直线形的、锯齿状的或者呈弯曲线的形状。材料减弱部例如设置在直接包围压模的凸缘的区域中。直接地包围例如是指材料减弱部和压模的中心轴线之间小于2cm、优选地小于1cm的间距。
根据一个优选的构造方案，所述罩分别在包围压模的区域中具有两个相对于压模凸缘切向地延伸的贯通狭槽。在压模和所述罩的一件式的构造方案中，所述罩和压模之间的过渡区域理解为压模凸缘。因此，弯曲横梁由所述罩的材料提供。贯通狭槽优选地彼此延伸地平行。
优选地，所述罩在两个对置的侧上分别具有一个孔用于与所述冷却体固定。
优选地，贯通狭槽彼此平行地、优选地平行于连接所述孔的轴线的假想的直线延伸。
优选地设置所述罩和框架之间可松开的连接。
所述罩和框架能够力配合地、例如摩擦配合地连接。摩擦配合例如通过由所述罩和/或框架的材料构成的摩擦凸出部形成。
按照根据本发明的功率半导体模块的一个另外的构造方案，所述框架贴靠在衬底的第二侧上并且由此倒扣在衬底上。
此外，本发明涉及一种由冷却体和固定在所述冷却体上的在前述实施方式中的任一个实施方式中的功率半导体模块组成的装置。功率半导体模块是所谓的无底板的模块，也就是说，至少一个衬底必要时通过金属涂覆直接邻接于冷却体布置。
附图说明
根据下述附图详细地说明本发明。在此，附图仅仅理解为示意性的并且示出仅仅一个优选的实施变体。附图中：
图1示出剖割根据本发明的一个实施方式的示意性的剖面图；
图2示出剖割根据本发明的一个另外的实施方式的横截图；
图3示出了出自图2的功率半导体模块的纵截面图；
图4示出了出自图2的功率半导体模块的立体纵截面图。
具体实施方式
根据本发明的功率半导体模块1设置用于固定地布置的冷却体20上。功率半导体模块1具有两件式的壳体2，3。在由壳体2，3确定的作为壳体内部的空心容积中布置一个衬底4，所述衬底在两侧以铜涂覆5，6。壳体包括框架3和搭接所述框架3的罩2。
衬底4的确定用于邻接地布置在冷却体20上的涂覆层5构造为几乎平面的并且用于建立衬底4和冷却体20之间的导热连接。衬底4的朝向壳体内部的侧同样以金属涂覆，其中，所述涂覆层6此外以印刷线路的形式存在，所述印刷线路用于与功率半导体元件14导电地或导热地接触，所述功率半导体元件布置在衬底4上并且与涂覆层6焊接。此外，为了电接触功率半导体元件14设置粘合线15。用于功率半导体元件14的负载接头和/或控制接头12经过所述罩2的穿孔从壳体内部向外被引导，以便在壳体2，3的外部提供接触区段。
此外，框架3具有朝向壳体内部的方向往回错开的接触面16，框架3以所述接触面贴靠在衬底4的承载功率半导体元件14的侧上。框架3通过设置在接触面16的区域中的粘合层固定在衬底4上。构造为搭接框架3的所述罩2在其朝向框架3的内侧上具有一个或多个肋13，以便使框架3与所述罩2摩擦配合地连接。所述罩2具有布置在中心的压模7，所述压模以其自由端贴靠在衬底4或上部的涂覆层6上并且在通过图1中未示出的固定件来固定所述罩2时将衬底4朝向冷却体20弹性地张紧，因为压模7相对于所述罩2和衬底4之间内部净宽的间距具有过盈。压模7与所述罩2一件式地由热塑性塑料构成。为了提供压模7的弹性挠度设置两个平行地延伸的贯通狭槽8，9，所述贯通狭槽相对于所述压模7的凸缘区域(17)切向地延伸。通过借助于贯通狭槽8，9提供的在所述罩2中的材料减弱部形成一个弯曲横梁，所述弯曲横梁提供用于压模7的弹性挠度，所述弹性挠度大于未示出的、然而未减弱的罩，该罩此外具有相同的尺寸和材料组成。
在图2至4中示出根据本发明的功率半导体模块1的一个另外的实施方式，其中，多个衬底4布置在由框架3和所述罩2构成的模块壳体2，3中。框架3形状配合地布置在搭接框架3的所述罩2中。与前述实施方式不同之处在于，框架3通过往回错开的支承凸出部16贴靠在衬底4的朝向壳体内部的侧上。此外，螺钉11表示为固定件，所述螺钉穿过所述罩2的位于末端的径向对置的孔，以便将所述罩2固定在未示出的冷却体上，其中，多个压模7基于其过盈分别将一个衬底4朝向未示出的冷却体张紧。如同由图2至4显而易见的那样，贯通狭槽8和9彼此平行地并且平行于连接所述孔18的假想的直线延伸。此外设置多个成对组合的由框架3或所述罩2形成的支承件21，22，所述支承件这样定位并且构造，即在不将所述罩2固定在冷却体上的情况下，所述罩的压模7可松开地安置在衬底4上，与此相反地，在借助于螺钉11将所述罩2固定在冷却体上的情况下才调节由压模7产生的弹性预应力和由此在衬底4和冷却体之间高效的热传递。

Claims (11)

1.一种功率半导体模块(1)，其用于布置在冷却体(20)上，其中，所述功率半导体模块(1)具有：
至少一个衬底(4)，所述至少一个衬底具有朝向所述冷却体(20)布置的并且用于与所述冷却体可导热地连接的确定的第一侧；
至少一个功率半导体元件(14)，所述至少一个功率半导体元件布置在所述衬底(4)的与所述第一侧对置的第二侧上；以及
电绝缘的壳体(2，3)，所述壳体限定空腔，所述衬底(4)和所述至少一个功率半导体元件(14)被容纳在所述空腔中；
其中所述壳体(2，3)具有以框架方式包围所述至少一个衬底(4)的框架(2)和利用固定件(11)固定在所述冷却体(20)上的罩(3)，其中所述罩(3)具有至少一个设置用于贴靠在所述衬底(4)上的压模(7)，以便至少在将所述功率半导体模块(1)固定在所述冷却体(20)上时，通过所述罩(2)以及通过所述至少一个压模(7)将所述衬底(4)弹性地相对于所述冷却体(20)张紧；
其特征在于，所述框架(3)形状配合地容纳所述衬底(4)和/或固定在所述衬底上。
2.根据权利要求1所述的功率半导体模块(1)，其特征在于，所述框架(3)和所述衬底(4)力配合地连接。
3.根据前述权利要求中任一项所述的功率半导体模块(1)，其特征在于，所述压模(7)弹性弯曲地固定在所述罩(2)上。
4.根据前述权利要求中任一项所述的功率半导体模块(1)，其特征在于，所述罩(2)通过一个或多个突出的支承件(21，22)在所述压模(7)的张紧方向上支撑在所述框架(3)上。
5.根据前述权利要求中任一项所述的功率半导体模块(1)，其特征在于，为了将所述压模(7)弹性弯曲地支承在所述罩(2)上，在所述罩(2)中设置至少一个材料减弱部。
6.根据前述权利要求中任一项所述的功率半导体模块(1)，其特征在于，所述罩(2)和所述压模(7)通过压模凸缘(17)一件式地连接，以及所述罩(2)分别在包围所述压模(7)的区域中具有两个相对于所述压模凸缘(17)切向地延伸的贯通狭槽(8，9)。
7.根据前述权利要求中任一项所述的功率半导体模块(1)，其特征在于，所述罩(2)在两个对置的侧上分别具有孔(18)以用于与所述冷却体(20)固定。
8.根据前述权利要求中任一项所述的功率半导体模块(1)，其特征在于，所述贯通狭槽(8，9)彼此平行地、优选地平行于连接所述孔(18)的假想的直线延伸。
9.根据前述权利要求中任一项所述的功率半导体模块(1)，其特征在于，所述罩(2)和所述框架(3)能够形状配合地或力配合地、例如摩擦配合地连接。
10.根据前述权利要求中任一项所述的功率半导体模块(1)，其特征在于，所述框架(3)贴靠在所述衬底(4)的第二侧上。
11.一种由冷却体(20)和固定在所述冷却体上的根据前述权利要求中任一项所述的功率半导体模块(1)组成的装置。
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Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109428132A (zh) * 2017-08-21 2019-03-05 Zf 腓德烈斯哈芬股份公司 电子模块的制造和电子模块
CN110417280A (zh) * 2018-04-30 2019-11-05 翰昂汽车零部件有限公司 逆变器的电子模块及其安装方法
CN113875324A (zh) * 2019-03-04 2021-12-31 奥迪股份公司 使用冲压板对变流器的直接冷却
CN116686079A (zh) * 2020-12-10 2023-09-01 日立能源瑞士股份公司 功率半导体模块、功率半导体组件和用于生产功率半导体模块的方法

Families Citing this family (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102019209069A1 (de) * 2019-06-24 2020-12-24 Siemens Aktiengesellschaft Befestigung von Leistungshalbleiterbauelementen auf gekrümmten Oberflächen
US11502064B2 (en) * 2021-02-17 2022-11-15 Infineon Technologies Ag Power semiconductor module having a current sensor module fixed with potting material
US11874303B2 (en) 2021-07-06 2024-01-16 Infineon Technologies Ag Power semiconductor module with current sensor rotation bar
DE102021212232A1 (de) * 2021-10-29 2023-05-04 Zf Friedrichshafen Ag Leistungsmodul und verfahren zum montieren eines leistungsmoduls
EP4432345A1 (en) * 2023-03-16 2024-09-18 Hitachi Energy Ltd Insulated metal substrate and method for producing an insulated metal substrate

Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001127238A (ja) * 1999-10-27 2001-05-11 Mitsubishi Electric Corp 半導体モジュール及び半導体モジュール用絶縁基板
US20040217465A1 (en) * 2001-10-10 2004-11-04 Thilo Stolze Power semiconductor module
US20060150751A1 (en) * 2003-06-10 2006-07-13 Europaische Gesellschaft Fur Leistungshalbleiter Mbh Power semiconductor module
CN101533972A (zh) * 2008-03-10 2009-09-16 英飞凌科技股份有限公司 压配合式连接器
CN104576551A (zh) * 2013-10-15 2015-04-29 英飞凌科技股份有限公司 在封装结构的间断上的电绝缘的热接口结构
CN105074919A (zh) * 2013-02-26 2015-11-18 三菱电机株式会社 电力用半导体装置

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE102004051039B4 (de) 2004-10-20 2008-06-26 Semikron Elektronik Gmbh & Co. Kg Leistungshalbleitermodul mit Druckkontakteinrichtung
US8237260B2 (en) * 2008-11-26 2012-08-07 Infineon Technologies Ag Power semiconductor module with segmented base plate

Patent Citations (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2001127238A (ja) * 1999-10-27 2001-05-11 Mitsubishi Electric Corp 半導体モジュール及び半導体モジュール用絶縁基板
US20040217465A1 (en) * 2001-10-10 2004-11-04 Thilo Stolze Power semiconductor module
US20060150751A1 (en) * 2003-06-10 2006-07-13 Europaische Gesellschaft Fur Leistungshalbleiter Mbh Power semiconductor module
CN101533972A (zh) * 2008-03-10 2009-09-16 英飞凌科技股份有限公司 压配合式连接器
CN105074919A (zh) * 2013-02-26 2015-11-18 三菱电机株式会社 电力用半导体装置
CN104576551A (zh) * 2013-10-15 2015-04-29 英飞凌科技股份有限公司 在封装结构的间断上的电绝缘的热接口结构

Cited By (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109428132A (zh) * 2017-08-21 2019-03-05 Zf 腓德烈斯哈芬股份公司 电子模块的制造和电子模块
CN109428132B (zh) * 2017-08-21 2024-03-15 Zf 腓德烈斯哈芬股份公司 电子模块的制造和电子模块
CN110417280A (zh) * 2018-04-30 2019-11-05 翰昂汽车零部件有限公司 逆变器的电子模块及其安装方法
CN113875324A (zh) * 2019-03-04 2021-12-31 奥迪股份公司 使用冲压板对变流器的直接冷却
CN116686079A (zh) * 2020-12-10 2023-09-01 日立能源瑞士股份公司 功率半导体模块、功率半导体组件和用于生产功率半导体模块的方法
CN116686079B (zh) * 2020-12-10 2024-08-20 日立能源有限公司 功率半导体模块、功率半导体组件和用于生产功率半导体模块的方法

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