CN106526445B - A kind of method for fast measuring of the hot steady-state characteristic of GaN HEMT - Google Patents
A kind of method for fast measuring of the hot steady-state characteristic of GaN HEMT Download PDFInfo
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- CN106526445B CN106526445B CN201611062801.6A CN201611062801A CN106526445B CN 106526445 B CN106526445 B CN 106526445B CN 201611062801 A CN201611062801 A CN 201611062801A CN 106526445 B CN106526445 B CN 106526445B
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- G01R—MEASURING ELECTRIC VARIABLES; MEASURING MAGNETIC VARIABLES
- G01R31/00—Arrangements for testing electric properties; Arrangements for locating electric faults; Arrangements for electrical testing characterised by what is being tested not provided for elsewhere
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Abstract
The present invention relates to field of manufacturing semiconductor devices more particularly to a kind of method for fast measuring of the hot steady-state characteristic of GaN HEMT, include the following steps: the multiple bias voltage values for choosing GaN HEMT device, measurement obtains the initial DC I-V characteristic of GaN HEMT device；According to the initial DC I-V characteristic of GaN HEMT device, the quiescent dissipation obtained under corresponding multiple bias voltages is calculated；The quiescent dissipation is arranged according to ascending order, and corresponding bias voltage value sequence is arranged according to the quiescent dissipation ascending order, presses to the GaN HEMT device, the hot steady-state characteristic of GaN HEMT device is re-measured, to improve measurement efficiency.
Description
Technical field
The present invention relates to field of manufacturing semiconductor devices more particularly to a kind of rapid surveys of the hot steady-state characteristic of GaN HEMT
Method.
Background technique
GaN high electron mobility transistor (HEMT) has very high two-dimensional electron gas (2-DEG) concentration, high saturation electricity
The advantages that sub- migration velocity and high power density so that GaN HEMT device microwave power application field have GaAs device without
The advantage of method analogy.But there is very high power density, about the 5~10 of GaAs device times just because of GaN HEMT, so that
The self-heating effect due to caused by power dissipation is fairly obvious during the work time for it, in GaN HEMT device test process
In, it is necessary to consider the influence of self-heating effect.
In GaN HEMT device characteristic evaluation and modeling process, direct current (DC) voltage and current (I- of measurement device is needed
V) and small signal S-parameters characteristic, generally using Semiconductor Parameter Analyzer (such as KeysightB1500 series and Keithley
4200 series) voltage/current source table as measured device.In GaNHEMT test, the electricity that DC I-V is measured will often find that
The reason of current value when flow valuve is than measurement S parameter under identical voltage bias condition is bigger than normal, causes this phenomenon is due to S
When parameter testing, device is long relative to the testing time of DC I-V in the testing time of each bias point, and it is flat that device more tends to heat
The junction temperature of the stable state of weighing apparatus, device is higher, and corresponding electric current is lower.Therefore, if in GaN HEMT device test process,
If device is not up to hot stable state, it is not the final result that we want that the result measured, which is only an intermediate state,.In order to survey
The hot steady-state characteristic for measuring GaN HEMT device needs to set a delay time before every measurement, and device is waited to reach heat
After stable state, feature measurement just can be carried out.But the time needed for GaN HEMT device reaches hot stable state is longer, generally requires several seconds
The difference Δ T of device junction temperature before and after even tens seconds, and device state variationjCorrelation, Δ TjHeat-stable time that is bigger, needing
It is longer.When the S parameter test of the test of DC I-V curve and more bias points that carry out GaN HEMT device, the bias point of test can
To reach tens to several hundred, if with traditional test method, the scanning device grid and drain bias voltage of sequence need
The quite long test waiting time is expended, the hot steady-state characteristic of ability measurement device.
Summary of the invention
The embodiment of the present invention solves existing skill by providing a kind of method for fast measuring of hot steady-state characteristic of GaN HEMT
It needs to spend the waiting time in the hot steady-state characteristic of measurement GaN HEMT in art, there are the low technical problems of measurement efficiency.
In order to solve the above-mentioned technical problem, the embodiment of the invention provides a kind of quick surveys of hot steady-state characteristic of GaN HEMT
Amount method, includes the following steps:
Multiple bias voltage values of GaN HEMT device are chosen, the initial DC I-V that measurement obtains GaN HEMT device is special
Property；
According to the initial DC I-V characteristic of GaN HEMT device, the static function obtained under corresponding multiple bias voltages is calculated
Consumption；
The quiescent dissipation is arranged according to ascending order, and corresponding bias voltage value is arranged according to the quiescent dissipation ascending order
Sequentially, it presses to the GaN HEMT device, re-measures the hot steady-state characteristic of GaN HEMT device.
Further, direct current when the hot steady-state characteristic of the GaN HEMT device is specially GaN HEMT device hot stable state
I-V characteristic and S parameter characteristic.
Further, the multiple bias voltage value is specially any number of within the scope of GaN HEMT device working bias voltage
The combination of grid voltage and corresponding drain voltage, wherein grid voltage variation range is complete from channel pinch-off voltage to channel
The variation of the voltage of opening, leakage pressure variation range is from 0V to the variation of device bias voltage.Further, the selection GaN
Multiple bias voltage values of HEMT device, measurement obtain the initial DC I-V characteristic of GaN HEMT device, specifically:
Multiple bias voltage values of GaN HEMT device are chosen, measurement obtains the drain current of GaN HEMT device with grid
The variation characteristic of voltage and drain voltage.
Using one or more technical solution in the present invention, have the following beneficial effects:
Due to applying bias voltage to device using the sequence being incremented by according to device quiescent dissipation, reduce device working condition
Change the power consumption for causing device and difference variation range and avoids conventional test methodologies so as to shorten hot steady-state waiting time
The middle device extra time that heating and cooling are wasted repeatedly, improve testing efficiency.
Detailed description of the invention
Fig. 1 is the step flow diagram of the method for fast measuring of the hot steady-state characteristic of GaN HEMT in the embodiment of the present invention；
Fig. 2 is the list schematic diagram of the static power of device under multiple bias points in the embodiment of the present invention；
Fig. 3 is the list schematic diagram after arranging static power according to ascending order in the embodiment of the present invention.
Specific embodiment
The embodiment of the present invention solves existing skill by providing a kind of method for fast measuring of hot steady-state characteristic of GaN HEMT
It needs to spend the waiting time in the hot steady-state characteristic of measurement GaN HEMT in art, there are the low technical problems of measurement efficiency.
In order to solve the above-mentioned technical problem, in conjunction with appended figures and specific embodiments to of the invention
Technical solution is described in detail.
The method for fast measuring of a kind of hot steady-state characteristic of GaN HEMT provided in an embodiment of the present invention, as shown in Figure 1, packet
It includes: S101 and chooses multiple bias voltage values of GaN HEMT device, the initial DC I-V that measurement obtains GaNHEMT device is special
Property；S102 calculates the static function obtained under corresponding multiple bias voltages according to the initial DC I-V characteristic of GaN HEMT device
Consumption；S103 arranges quiescent dissipation according to ascending order, and arranges corresponding bias voltage value sequence according to quiescent dissipation ascending order, right
GaN HEMT device pressure, re-measures the hot steady-state characteristic of GaN HEMT device.
In a particular embodiment, test method provided by the invention is suitable for large quantities of measurements of similar transistor npn npn
Examination.Firstly, GaN HEMT device needs the direct current I- to GaN HEMT device in the quiescent dissipation of each bias point in order to obtain
V curve does preparatory test, and the measurement result in the S101 only plays the role of the assessment of an initial value, therefore, the measurement result
It does not need exactly accurate, does not need device yet and reach thermal steady state.Specifically, choosing the more of GaN HEMT device in S101
A bias voltage value, i.e., the combination of any number of grid voltages and corresponding drain voltage within the scope of device working bias voltage,
Middle grid voltage variation range is the variation for the voltage opened from channel pinch-off voltage value channel, and the variation range of drain voltage is
From 0V to the variation of device bias voltage, particularly as being first fixed grid voltage, then drain voltage is scanned, then, retightened
Grid voltage, then scan drain voltage, successively gets in this way, thus measurement obtain the drain current of GaN HEMT device with
The variation characteristic of grid voltage and drain voltage.Reach thermal steady state due to not needing device in this step, in order to accelerate
The test delay time (delay time) of Semiconductor Parameter Analyzer (by taking B1505 as an example) can be set as 0 second by test speed,
Time of measuring (measure time) is set as Medium (M).
The grid voltage variation range is from channel pinch-off voltage to the variation of the completely open voltage of channel.For example, right
0.25 μm of GaN HEMT device, grid voltage can take any number of voltage values in -3.5V~0V, or to 0.25 μm
GaAs pHEMT device, grid voltage can take any number of voltage values in -1.5V~0V.The variation range of drain voltage is
From 0V to the variation of device bias voltage.
Then, S102 is executed, according to the initial DC I-V characteristic of GaN HEMT device, calculates and obtains corresponding multiple biasings
Quiescent dissipation under voltage, quiescent dissipation at this time are exactly according under multiple bias voltage values, and drain current multiplies with drain voltage
The quiescent dissipation that product obtains.As shown in Fig. 2, under 15 bias voltage values, the quiescent dissipation list of acquisition.
Finally, executing S103, quiescent dissipation is arranged according to ascending order, and corresponding biasing is arranged according to quiescent dissipation ascending order
Voltage value sequence, presses to GaN HEMT device, re-measures the hot steady-state characteristic of GaN HEMT device.
Specifically, the sequence being incremented by according to GaN HEMT device quiescent dissipation, the corresponding sequence for rearranging bias voltage,
As shown in figure 3, so as to avoid device heating and cooling repeatedly, and the difference that device state changes caused quiescent dissipation every time reduces
(i.e. Δ TjReduce), so as to shorten the waiting time of hot stable state.For example, being pressed after according to the arrangement of quiescent dissipation ascending order
Corresponding bias voltage value sequence is arranged according to quiescent dissipation ascending order, presses to GaN HEMT device, re-measures GaN HEMT device
The hot steady-state characteristic of part, DC I-V characteristics when specifically using Semiconductor Parameter Analyzer to the hot stable state of GaN HEMT device
It is measured with S parameter characteristic.It is set as 1 second using B1500 series of tests delay time (delaytime), time of measuring
(measure time) is set as short (S), in this way, compared with traditional measurement method, when substantially reducing overall measurement
Between, moreover, measuring process of the invention, can be improved testing efficiency, the high-volume especially suitable for similar transistor npn npn is tested,
Because S101 and S102 are needed to be implemented once, and the transistor static power consumption of other sizes can lead to when similar transistor npn npn measures
The principle for crossing equal proportion extension is estimated.
By using above-mentioned measurement method, can the effectively save time, improve measurement efficiency.
Although preferred embodiments of the present invention have been described, it is created once a person skilled in the art knows basic
Property concept, then additional changes and modifications may be made to these embodiments.So it includes excellent that the following claims are intended to be interpreted as
It selects embodiment and falls into all change and modification of the scope of the invention.
Obviously, various changes and modifications can be made to the invention without departing from essence of the invention by those skilled in the art
Mind and range.In this way, if these modifications and changes of the present invention belongs to the range of the claims in the present invention and its equivalent technologies
Within, then the present invention is also intended to include these modifications and variations.
Claims (4)
1. a kind of method for fast measuring of the hot steady-state characteristic of GaN HEMT, which comprises the steps of:
Multiple bias voltage values of GaN HEMT device are chosen, measurement obtains the initial DC I-V characteristic of GaN HEMT device；
According to the initial DC I-V characteristic of GaN HEMT device, the quiescent dissipation obtained under corresponding multiple bias voltages is calculated；
The quiescent dissipation is arranged according to ascending order, and suitable according to the corresponding bias voltage value of quiescent dissipation ascending order arrangement
Sequence presses to the GaN HEMT device, re-measures the hot steady-state characteristic of GaN HEMT device.
2. the method for fast measuring of the hot steady-state characteristic of GaN HEMT according to claim 1, which is characterized in that the GaN
DC I-V characteristics and S parameter characteristic when the hot steady-state characteristic of HEMT device is specially GaN HEMT device hot stable state.
3. the method for fast measuring of the hot steady-state characteristic of GaN HEMT according to claim 1, which is characterized in that the multiple
Bias voltage value is specially any number of grid voltages and corresponding drain voltage within the scope of GaN HEMT device working bias voltage
Combination, wherein grid voltage variation range is the drain electrode electricity from channel pinch-off voltage to the variation of the completely open voltage of channel
The variation range of pressure is the variation of the HEMT device bias voltage from 0V to GaN.
4. the method for fast measuring of the hot steady-state characteristic of GaN HEMT according to claim 1, which is characterized in that the selection
Multiple bias voltage values of GaN HEMT device, measurement obtain the initial DC I-V characteristic of GaN HEMT device, specifically:
Multiple bias voltage values of GaN HEMT device are chosen, measurement obtains the drain current of GaN HEMT device with grid voltage
With the variation characteristic of drain voltage.
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| CN107192935B (en) * | 2017-07-07 | 2019-12-13 | 成都海威华芯科技有限公司 | Method for measuring thermal resistance and thermal capacity of GaN HEMT device |
| CN107422243B (en) * | 2017-08-28 | 2020-09-29 | 中国电子产品可靠性与环境试验研究所 | Junction temperature testing device, testing board, testing system and method for gallium nitride HEMT device |
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| JPS62144339A (en) * | 1985-12-19 | 1987-06-27 | Matsushita Electronics Corp | Inspection method of semiconductor device |
| CN101246136A (en) * | 2008-03-21 | 2008-08-20 | 东南大学 | Electric test method for thermal expansion coefficient of surface finished polysilicon thin film |
| CN102207534A (en) * | 2011-03-18 | 2011-10-05 | 华南师范大学 | Method and device for measuring thermal resistance of light emitting diode (LED) by pn junction |
| CN102955113A (en) * | 2011-08-17 | 2013-03-06 | 中国科学院微电子研究所 | Method for measuring thermal reliability of GaN-based devices |
| CN105070701A (en) * | 2015-08-23 | 2015-11-18 | 华南理工大学 | GaN-based inverted HEMT device structure and manufacturing method thereof |
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2016
- 2016-11-25 CN CN201611062801.6A patent/CN106526445B/en active Active
Patent Citations (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPS62144339A (en) * | 1985-12-19 | 1987-06-27 | Matsushita Electronics Corp | Inspection method of semiconductor device |
| CN101246136A (en) * | 2008-03-21 | 2008-08-20 | 东南大学 | Electric test method for thermal expansion coefficient of surface finished polysilicon thin film |
| CN102207534A (en) * | 2011-03-18 | 2011-10-05 | 华南师范大学 | Method and device for measuring thermal resistance of light emitting diode (LED) by pn junction |
| CN102955113A (en) * | 2011-08-17 | 2013-03-06 | 中国科学院微电子研究所 | Method for measuring thermal reliability of GaN-based devices |
| CN105070701A (en) * | 2015-08-23 | 2015-11-18 | 华南理工大学 | GaN-based inverted HEMT device structure and manufacturing method thereof |
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